| Budget Amount *help |
¥4,420,000 (Direct Cost: ¥3,400,000、Indirect Cost: ¥1,020,000)
Fiscal Year 2019: ¥650,000 (Direct Cost: ¥500,000、Indirect Cost: ¥150,000)
Fiscal Year 2018: ¥1,430,000 (Direct Cost: ¥1,100,000、Indirect Cost: ¥330,000)
Fiscal Year 2017: ¥2,340,000 (Direct Cost: ¥1,800,000、Indirect Cost: ¥540,000)
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| Outline of Final Research Achievements |
I studied a method for extending the emission wavelength of InAs quantum dots (QDs) grown on nitrogen-doped GaAs surfaces by varying GaAs capping temperature. It was found that the QD emission wavelength was determined by the superposition of three factors: a decrease in the as-grown QD size and an increase in the In composition induced by the suppression of Ga incorporation from the underlying layer, and QD shrinkage during GaAs capping. By using the optimized nitridation conditions and capping temperature, the nitrogen-doped sample exhibited a 1.3 μm-emission with the intensity higher than that for undoped sample.
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