| Project/Area Number |
17K06359
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| Research Category |
Grant-in-Aid for Scientific Research (C)
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| Allocation Type | Multi-year Fund |
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| Section | 一般 |
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| Research Field |
Electronic materials/Electric materials
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| Research Institution | Kanagawa University |
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Principal Investigator |
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| Co-Investigator(Kenkyū-buntansha) |
鮫島 俊之 東京農工大学, 工学(系)研究科(研究院), 教授 (30271597)
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| Project Period (FY) |
2017-04-01 – 2020-03-31
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| Project Status |
Completed (Fiscal Year 2019)
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| Budget Amount *help |
¥4,680,000 (Direct Cost: ¥3,600,000、Indirect Cost: ¥1,080,000)
Fiscal Year 2019: ¥1,690,000 (Direct Cost: ¥1,300,000、Indirect Cost: ¥390,000)
Fiscal Year 2018: ¥1,300,000 (Direct Cost: ¥1,000,000、Indirect Cost: ¥300,000)
Fiscal Year 2017: ¥1,690,000 (Direct Cost: ¥1,300,000、Indirect Cost: ¥390,000)
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| Keywords | SiC / 量子ドット / PL発光 / ホットイオン注入 / 量子閉じ込め効果 / Si系発光素子 / SiC量子ドット / Si酸化膜 / 電子・電気材料 / 半導体物性 / ナノ材料 / 光物性 / SiCドット / 不確定性原理 |
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| Outline of Final Research Achievements |
We have experimentally demonstrated SiC-dots with 1 to several-nm size in both Si and SiO2 fabricated by hot-ion implantation and the post N2 annealing processes. SiC-dots can emit very large photoluminescence (PL) from near-UV to near-IR ranges. Especially, SiC quantum dots (QDs) in SiO2 layer realize the PL emission coefficient enhancement caused by the strong confinement of excited electrons in QDs. Thus, SiC-dots become very promising structures for a future Si-based photonic device.
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| Academic Significance and Societal Importance of the Research Achievements |
ULSI製法と互換性のある簡易なホットイオン注入を一般的なSi基板及びSiO2層に行うだけで，低次元（0次元）SiCの形成と，その大きな発光特性が実現できた．本研究のSiCドット構造は，量子効果実現の学問的意義のみならず，安価な新規Si系発光デバイス応用，及びULSI用電子素子とのハイブリット素子としても将来有望であることが判明した．
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