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Development of the optical wave-guide of nitride based laser diodes by using InN/GaN short-period superlattices

Research Project

Project/Area Number 17K06360
Research Category

Grant-in-Aid for Scientific Research (C)

Allocation TypeMulti-year Fund
Section一般
Research Field Electronic materials/Electric materials
Research InstitutionMeijo University

Principal Investigator

Imai Daichi  名城大学, 理工学部, 助教 (20739057)

Project Period (FY) 2017-04-01 – 2020-03-31
Project Status Completed (Fiscal Year 2019)
Budget Amount *help
¥4,680,000 (Direct Cost: ¥3,600,000、Indirect Cost: ¥1,080,000)
Fiscal Year 2019: ¥780,000 (Direct Cost: ¥600,000、Indirect Cost: ¥180,000)
Fiscal Year 2018: ¥780,000 (Direct Cost: ¥600,000、Indirect Cost: ¥180,000)
Fiscal Year 2017: ¥3,120,000 (Direct Cost: ¥2,400,000、Indirect Cost: ¥720,000)
Keywords窒化物半導体 / 半導体レーザー / 1分子層InN / 短周期超格子 / 秩序混晶 / InGaN混晶 / 分光エリプソメトリー / 1分子層InN
Outline of Final Research Achievements

In this work, we have proposed a quasi-InGaN ternary alloy based optical waveguide for GaN based laser diodes (LDs) instead of conventional waveguide composed of InGaN ternary alloys. We have, in particularly, conducted optical characterizations of quasi-InGaN ternary alloys based on InN/GaN short-period superlattices (SPSs) and 1 ML-InN quantum wells (QWs). It was revealed that optical losses inside the wave guide or active layer originating from the potential fluctuations of InGaN ternary alloys are possibly reduced by quasi InGaN ternary alloys due to the low potential fluctuations. We have also analyzed energy band structure and carrier recombination processes of SPSs and single 1ML-InN QW embedded in GaN. We conclude that the development of the LD’s waveguide by using quasi-InGaN ternary alloys based on InN/GaN-SPSs is possible.

Academic Significance and Societal Importance of the Research Achievements

擬似InGaN混晶による半導体レーザー導波光制御構造の有効性の実証は、窒化物系半導体レーザー動作特性の更なる向上と、発振波長の長波長側拡大に資する新しいデバイス設計手法の構築に繋がり、省エネルギー化を推進する現代社会においてその研究意義は大きいと考えている。また擬似InGaN混晶の物性は、依然未解明な点が多く、本研究を通して光学的物性の解明が進んだことは学術的にも意義のあることであると考えている。

Report

(4 results)
  • 2019 Annual Research Report   Final Research Report ( PDF )
  • 2018 Research-status Report
  • 2017 Research-status Report
  • Research Products

    (24 results)

All 2020 2019 2018

All Presentation (24 results) (of which Int'l Joint Research: 9 results,  Invited: 3 results)

  • [Presentation] 大型放射光施設SPring-8のX線マイクロビームを用いた単一Ga1-xInxN/GaN量子殻の局所構造評価2020

    • Author(s)
      市川 貴登,近藤 剣,安田 信広,今井 康彦,中尾 知代,荒井 重勇,後藤 七美,上山 智,今井 大地,宮嶋 孝夫
    • Organizer
      2020年<第67回>春季応用物理学会学術講演会
    • Related Report
      2019 Annual Research Report
  • [Presentation] xInxN混晶におけるバンド端近傍のポテンシャル揺らぎと光学定数2019

    • Author(s)
      今井大地,山路知明,三好実人, 竹内哲也, 宮嶋孝夫
    • Organizer
      2019年<第66回>応用物理学会春季学術講演会
    • Related Report
      2019 Annual Research Report
  • [Presentation] Pendeo成長GaNを下地とした3次表面グレーティンを有する横結合分布帰還型 GaN系半導体レーザの設計と作製2019

    • Author(s)
      高木健太,安藤壮,森岡佳紀,上向井正裕,片山竜二,今井大地,宮嶋孝夫
    • Organizer
      2019年<第66回>応用物理学会春季学術講演会
    • Related Report
      2019 Annual Research Report
  • [Presentation] パルスレーザによるGaNにイオン注入したMgアクセプターの活性化2019

    • Author(s)
      宮嶋孝夫, 山田祐輔, 市川貴登, 今井大地, 鮫島俊之
    • Organizer
      2019年<第66回>応用物理学会春季学術講演会
    • Related Report
      2019 Annual Research Report
  • [Presentation] 放射光を使ったGaN系混晶半導体とGaN系量子殻の局所構造評価2019

    • Author(s)
      宮嶋孝夫,清木良麻,近藤剣,市川貴登,伊奈稔哲,新田清文,宇留賀朋哉,鶴田一樹,隅谷和嗣,今井康彦,木村滋,安田伸広,三好実人,今井大地,竹内哲也,上山智
    • Organizer
      2019年<第66回>応用物理学会春季学術講演会
    • Related Report
      2019 Annual Research Report
    • Invited
  • [Presentation] Optically Pumped GaN-Based Laterally Coupled Distributed-Feedback Semiconductor Lasers with 3rd-Order Surface Gratings Grown on Pendeo-Epitaxy GaN2019

    • Author(s)
      T. Ando, K. Takagi, Y. Morioka, M. Uemukai, R. Katayama, D. Imai and T. Miyajima
    • Organizer
      13th International Conference on Nitride Semiconductors
    • Related Report
      2019 Annual Research Report
    • Int'l Joint Research
  • [Presentation] Characterization of Potential Fluctuations and Optical Constants in Al1-xInxN Alloys Grown on C-Plane GaN Substrate2019

    • Author(s)
      D. Imai, T. Yamaji, M. Miyoshi, T. Takeuchi and T. Miyajima
    • Organizer
      13th International Conference on Nitride Semiconductors
    • Related Report
      2019 Annual Research Report
    • Int'l Joint Research
  • [Presentation] Pulsed-Laser Activation of Implanted Mg Acceptors in GaN Grown on a GaN Substrate2019

    • Author(s)
      T. Miyajima, Y. Yamada, T. Ichikawa, D. Imai and T. Sameshima
    • Organizer
      13th International Conference on Nitride Semiconductors
    • Related Report
      2019 Annual Research Report
    • Int'l Joint Research
  • [Presentation] Characterization of the Optical Constants in Al1-xInxN Alloys Grown on a c-Plane freestanding GaN Substrate; The effect of the potential fluctuations2019

    • Author(s)
      Daichi Imai, Tomoaki Yamaji, Makoto Miyoshi, Tetsuya Takeuchi and Takao Miyajima
    • Organizer
      1st International Workshop on AlGaN based UV-Laserdiodes
    • Related Report
      2019 Annual Research Report
    • Int'l Joint Research
  • [Presentation] Structural analysis of Ga1-xInxN/GaN five-quantum wells grown on side-walls of GaN nano-wires by using an X-ray nano-beam from synchrotron radiation2019

    • Author(s)
      T. Kondo, T. Ichikawa, H. Akasaka, K. Uno, R. Kobayashi, Y. Imai, K. Sumitani, S. Kimura, N. Goto, D. Imai, S. Kamiyama and T. Miyajima
    • Organizer
      Electronic Materials Symposium
    • Related Report
      2019 Annual Research Report
  • [Presentation] 分子線エピタキシー法で成長したGaAs 系バイセクションレーザの設計と作製2019

    • Author(s)
      川裕介,荒川亮太,神林大介,成塚重弥,今井大地,宮嶋孝夫
    • Organizer
      2019年<第88回>応用物理学会秋季学術講演会
    • Related Report
      2019 Annual Research Report
  • [Presentation] X線マイクロビーム回折を用いた単一Ga1-xInxN/GaN量子殻の局所構造評価2019

    • Author(s)
      市川貴登,近藤剣,安田信広,隅谷和嗣,今井康彦,中尾知代,荒井重勇,後藤七美,上山智,今井大地,宮嶋孝夫
    • Organizer
      第7回応用物理学会スチューデントチャプター東海地区学術講演会
    • Related Report
      2019 Annual Research Report
  • [Presentation] 半導体レーザーに応用されている窒化物系混晶半導体の光学特性解析2019

    • Author(s)
      今井 大地
    • Organizer
      第6回ニューフロンティアリサーチワークショップ
    • Related Report
      2019 Annual Research Report
    • Int'l Joint Research
  • [Presentation] 放射光を使ったGaN系混晶半導体とGaN系量子殻の局所構造評価2019

    • Author(s)
      宮嶋 孝夫、清木 良麻、近藤 剣、市川 貴登、伊奈 稔哲、新田 清文、宇留賀 朋哉、鶴田 一樹、隅谷 和嗣、今井 康彦、木村 滋、安田 伸広、三好 実人、今井 大地、竹内 哲也、上山 智
    • Organizer
      第66回春季応用物理学会学術講演会
    • Related Report
      2018 Research-status Report
    • Invited
  • [Presentation] Al1-xInxN混晶におけるバンド端近傍のポテンシャル揺らぎと光学定数の解析2019

    • Author(s)
      今井 大地、山路 知明、三好 実人、竹内 哲也、宮嶋 孝夫
    • Organizer
      第66回春季応用物理学会学術講演会
    • Related Report
      2018 Research-status Report
  • [Presentation] パルスレーザによるGaNにイオン注入したMgアクセプターの活性化2019

    • Author(s)
      宮嶋 孝夫、山田 祐輔、市川 貴登、今井 大地、鮫島 俊之
    • Organizer
      第66回春季応用物理学会学術講演会
    • Related Report
      2018 Research-status Report
  • [Presentation] Pendeo成長GaNを下地とした3次表面グレーティングを有する横結合分布帰還型GaN系半導体レーザの設計と作製2019

    • Author(s)
      高木 健太,安藤 壮,片山 竜二,上向井 正裕,今井 大地,竹内 哲也,宮嶋 孝夫
    • Organizer
      第66回春季応用物理学会学術講演会
    • Related Report
      2018 Research-status Report
  • [Presentation] Characterization of Potential Fluctuations and Optical Constants in Al1-xInxN Alloys Grown on C-Plane GaN Substrate2019

    • Author(s)
      Daichi Imai, Tomoaki Yamaji, Makoto Miyoshi, Tetsuya Takeuchi, and Takao Miyajima
    • Organizer
      ICNS-13 (2019) 13th International Conference on Nitride Semiconductors
    • Related Report
      2018 Research-status Report
    • Int'l Joint Research
  • [Presentation] Pulsed-Laser Activation of Implanted Mg Acceptors in GaN Grown on a GaN Substrate2019

    • Author(s)
      Takao Miyajima, Yusuke Yamada, Takato Ichikawa, Daichi Imai, and Toshiyuki Sameshima
    • Organizer
      ICNS-13 (2019) 13th International Conference on Nitride Semiconductors
    • Related Report
      2018 Research-status Report
    • Int'l Joint Research
  • [Presentation] Optically Pumped GaN-based Laterally Coupled Distributed-feedback Semiconductor Lasers with 3rd-order Surface Gratings Grown on Pendeo-epitaxy GaN2019

    • Author(s)
      Tsuyoshi Andou, Kenta Takagi, Yoshiki Morioka, Masahiro Uemukai, Ryuji Katayama, Daichi Imai, and Takao Miyajima
    • Organizer
      ICNS-13 (2019) 13th International Conference on Nitride Semiconductors
    • Related Report
      2018 Research-status Report
    • Int'l Joint Research
  • [Presentation] Structural analysis of m-plane Ga1-xInxN/GaN multi-quantum wells grown on GaN nano-wires by using 1 -1 0 0 reflection of X-ray nano-beam2018

    • Author(s)
      Tsurugi Kondo, Ryoma Seiki, Yasuhiko Imai, Kazushi Sumitani, Shigeru Kimura, Kenta Takagi, Nanami Goto, Daichi Imai, Satoshi Kamiyama, and Takao Miyajima
    • Organizer
      2018 International Workshop on Nitride Semiconductors
    • Related Report
      2018 Research-status Report
    • Int'l Joint Research
  • [Presentation] X線ナノビームによる1-100反射を用いたGaNナノワイヤ側壁上m面Ga1-xInxN/GaN量子井戸の構造評価2018

    • Author(s)
      近藤 剣 、清木 良麻 、今井 康彦、隅谷 和嗣、木村 滋2、高木 健太 、後藤 七美 、市川 貴登 、今井 大地 、上山 智 、宮嶋 孝夫
    • Organizer
      第79回秋季応用物理学会学術講演会
    • Related Report
      2018 Research-status Report
  • [Presentation] (InN)1/(GaN)n短周期超格子による秩序InGaN混晶の物性評価2018

    • Author(s)
      今井大地, 草部一秀, 吉川明彦
    • Organizer
      第10回窒化物半導体の成長・評価に関する夏季ワークショップ
    • Related Report
      2017 Research-status Report
    • Invited
  • [Presentation] Optical Characterization of Ordered InGaN Ternary Alloys Based on (InN)1/(GaN)n Short-period Superlattices Grown by Dynamic Atomic Layer Epitaxy (D-ALEp)2018

    • Author(s)
      Daichi Imai, Kazuhide Kusakabe, and Akihiko Yoshikawa
    • Organizer
      International Symposium on Semiconductor Light Emitting Devices 2017
    • Related Report
      2017 Research-status Report

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Published: 2017-04-28   Modified: 2021-02-19  

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