Optical AND operation in semiconductor quantum structure

• Project/Area Number: 17K06364
• Research Category: Grant-in-Aid for Scientific Research (C)
• Allocation Type: Multi-year Fund
• Section: 一般
• Research Field: Electronic materials/Electric materials
• Research Institution: National Institute for Materials Science
• Principal Investigator: KAWAZU Takuya 国立研究開発法人物質・材料研究機構, 機能性材料研究拠点, 主任研究員 (00444076)
• Project Period (FY): 2017-04-01 – 2020-03-31
• Project Status: Completed (Fiscal Year 2019)
• Budget Amount: ¥4,810,000 (Direct Cost: ¥3,700,000、Indirect Cost: ¥1,110,000); Fiscal Year 2019: ¥1,430,000 (Direct Cost: ¥1,100,000、Indirect Cost: ¥330,000); Fiscal Year 2018: ¥1,560,000 (Direct Cost: ¥1,200,000、Indirect Cost: ¥360,000); Fiscal Year 2017: ¥1,820,000 (Direct Cost: ¥1,400,000、Indirect Cost: ¥420,000)
• Keywords: 半導体 / 光起電流 / 電界効果トランジスター / 量子ドット / 電子デバイス / 量子構造 / 赤外材料・素子

Outline of Final Research Achievements

We demonstrated that the lateral photocurrent is generated only when both the light A and B simultaneously illuminate the field-effect transistors (FETs) in the following cases (1) and (2); the FETs act as optical AND elements.
(1) An n-AlGaAs/GaAs heterojunction FET is irradiated with (A) a laser beam with the energy above the Schottky-barrier which uniformly illuminates the gate region and/or (B) a laser beam with the energy above the GaAs bandgap which locally illuminates the ungate region.
(2) An n-AlGaAs/GaAs heterojunction FET embedded with anisotropic InGaAs quantum dots is irradiated with (A) a laser beam with the energy above GaAs and/or (B) a laser beam with the energy exciting the anisotropic InGaAs QDs.

Academic Significance and Societal Importance of the Research Achievements

波長の異なる２種類のレーザーを照射した時にのみ面内光電流を生じさせるような光ガルバノ効果(２波長励起光ガルバノ効果)に関する研究は、他では例がなく、極めて独創的なものである。特に、光照射方法や異方的な量子ドットにより、空間的な対称性の低下を生じさせ、光ガルバノ効果を引き起こす試みは、本研究独特の手法であり、学術的意義は大きい。また、本研究で得られた結果は、光スイッチング素子や光論理素子(光AND素子)への応用が可能で、その社会的な貢献も期待できる。

Research Products

• [Journal Article] Temperature dependence of Schottky photocurrent for local gate edge illumination in n-AlGaAs/GaAs/AlGaAs double-heterojunction field-effect transistor (2019)
  • Author(s): Kawazu Takuya、Noda Takeshi、Sakuma Yoshiki
  • Journal Title: Japanese Journal of Applied Physics Volume: 58 Issue: SI Pages: SIIB05-SIIB05
  • DOI: 10.7567/1347-4065/ab0c76
  • NAID: 210000156351
  • Peer Reviewed
• [Journal Article] Valence band mixing in GaAs/AlGaAs quantum wells adjacent to self-assembled InAlAs antidots (2019)
  • Author(s): Takuya Kawazu
  • Journal Title: Journal of Nanomaterials Volume: 2019 Pages: 1-7
  • DOI: 10.1155/2019/5349291
  • Peer Reviewed / Open Access
• [Journal Article] Optical AND operation in n-AlGaAs/GaAs heterojunction field effect transistor (2018)
  • Author(s): Takuya Kawazu, Takeshi Noda, and Yoshiki Sakuma
  • Journal Title: Applied Physics Letters Volume: 112 Issue: 7
  • DOI: 10.1063/1.5010845
  • Peer Reviewed
• [Journal Article] Optical anisotropy of InGaAs quantum dot arrays aligned along multiatomic steps on vicinal GaAs(111)B (2017)
  • Author(s): Kawazu Takuya
  • Journal Title: Journal of Applied Physics Volume: 122 Issue: 20
  • DOI: 10.1063/1.4996058
  • Peer Reviewed
• [Presentation] Enhancement of Infrared Photo-responses of the Schottky Gate Region of an n-AlGaAs/GaAs Heterojunction FET by a Second Light Illumination (2019)
  • Author(s): Kawazu Takuya、Noda Takeshi、Sakuma Yoshiki
  • Organizer: The 46th International Symposium on Compound Semiconductors (ISCS2019)
  • Int'l Joint Research
• [Presentation] 局所光照射によるn-AlGaAs/GaAsヘテロ接合電界効果トランジスタのショットキー光電流増強効果 (2019)
  • Author(s): 川津 琢也，野田 武司, 佐久間 芳樹
  • Organizer: 第66回応用物理学春季学術講演会(2019年春季)
• [Presentation] 微傾斜GaAs(111)B 基板上に作製したInGaAs量子細線列の光学異方性 (2018)
  • Author(s): 川津 琢也、野田 武司、佐久間 芳樹
  • Organizer: 第79回応用物理学会秋季学術講演会(2018年春季)
• [Presentation] Temperature Dependence of Schottky Photocurrent for Local Gate Edge Illumination in n-AlGaAs/GaAs/AlGaAs Double-Heterojunction Field-Effect Transistor (2018)
  • Author(s): Takuya Kawazu, Takeshi Noda, and Yoshiki Sakuma
  • Organizer: 14th International Conference on Atomically Controlled Surfaces, Interfaces and Nanostructures (ACSIN-14)
  • Int'l Joint Research
• [Presentation] n-AlGaAs/GaAsヘテロ接合電界効果トランジスタにおける光AND演算動作 (2018)
  • Author(s): 川津 琢也，野田 武司, 佐久間 芳樹
  • Organizer: 第65回応用物理学(2018年春季)
• [Presentation] n-AlGaAs/GaAsヘテロ接合電界効果トランジスタのショットキーゲート端照射による光電流生成 (2017)
  • Author(s): 川津 琢也，野田 武司, 佐久間 芳樹
  • Organizer: 第78回応用物理学(2017年春季)
• [Remarks] NIMSの研究者情報データベース「SAMURAI」
  • URL: http://samurai.nims.go.jp/