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Investigation on hydrogen sensors using semiconductor devices

Research Project

Project/Area Number 17K06365
Research Category

Grant-in-Aid for Scientific Research (C)

Allocation TypeMulti-year Fund
Section一般
Research Field Electronic materials/Electric materials
Research InstitutionNational Institute for Materials Science

Principal Investigator

IROKAWA Yoshihiro  国立研究開発法人物質・材料研究機構, 機能性材料研究拠点, 主幹研究員 (90394832)

Project Period (FY) 2017-04-01 – 2021-03-31
Project Status Completed (Fiscal Year 2020)
Budget Amount *help
¥4,680,000 (Direct Cost: ¥3,600,000、Indirect Cost: ¥1,080,000)
Fiscal Year 2019: ¥910,000 (Direct Cost: ¥700,000、Indirect Cost: ¥210,000)
Fiscal Year 2018: ¥910,000 (Direct Cost: ¥700,000、Indirect Cost: ¥210,000)
Fiscal Year 2017: ¥2,860,000 (Direct Cost: ¥2,200,000、Indirect Cost: ¥660,000)
Keywords水素 / 窒化物半導体 / 界面 / 相互作用 / 窒化ガリウム / MIS型水素センサ / MIS界面 / 中間層 / 自然酸化膜 / 準安定酸化ガリウム / ナノシート / センサ / 半導体デバイス
Outline of Final Research Achievements

Recently, hydrogen attracts much attention as a clean energy source. However, hydrogen has no colour and no smell, and it is combustible and explosible in air; therefore, much attention should be paid when we handle it. For those reasons, from a viewpoint of safety, hydrogen sensing technology plays a key role in hydrogen-based society; a wide variety of hydrogen sensors is required. In this research, we revealed that native oxide layers on GaN are crystalline gallium oxide nano-sheets and that these native oxide layers play a critical role in sensing hydrogen.

Academic Significance and Societal Importance of the Research Achievements

研究成果の学術的意義として、以下が挙げられる。半導体デバイスの信頼性の観点から、雰囲気中の水素が半導体デバイスの特性を変化させることは古くから知られていたが、そのメカニズムは正確にはわかっていなかった。今回の成果は、そのメカニズムに関して、新たな提案を行うものである。社会的意義として、半導体デバイスと水素の相互作用機構が明らかになり、今後、様々な仕様の水素センサ実現が期待でされる。

Report

(5 results)
  • 2020 Annual Research Report   Final Research Report ( PDF )
  • 2019 Research-status Report
  • 2018 Research-status Report
  • 2017 Research-status Report
  • Research Products

    (16 results)

All 2020 2019 2018 2017

All Journal Article (6 results) (of which Peer Reviewed: 6 results) Presentation (5 results) (of which Int'l Joint Research: 3 results,  Invited: 2 results) Patent(Industrial Property Rights) (5 results)

  • [Journal Article] Effect of hydrogen on Pt/GaN Schottky diodes2020

    • Author(s)
      Yoshihiro Irokawa
    • Journal Title

      Jpn. J. Appl. Phys.

      Volume: 59

    • Related Report
      2020 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Hydrogen effect on Pt/Al2O3/GaN metal-oxide-semiconductor capacitors2019

    • Author(s)
      Yoshihiro Irokawa, Toshihide Nabatame, Akihiko Ohi, Naoki Ikeda, Osami Sakata and Yasuo Koide
    • Journal Title

      Japanese Journal of Applied Physics

      Volume: 58 Pages: 100915-100915

    • NAID

      210000157181

    • Related Report
      2019 Research-status Report
    • Peer Reviewed
  • [Journal Article] Electron microscopy and ultraviolet photoemission spectroscopy studies of native oxides on GaN(0001)2018

    • Author(s)
      Yoshihiro Irokawa, Kazutaka Mitsuishi, Taku T. Suzuki, Kazuya Yuge, Akihiko Ohi, Toshihide Nabatame, Tsuyoshi Ohnishi, Koji Kimoto and Yasuo Koide
    • Journal Title

      Japanese Journal of Applied Physics

      Volume: 57 Pages: 098003-098003

    • NAID

      210000149649

    • Related Report
      2018 Research-status Report
    • Peer Reviewed
  • [Journal Article] Investigation of intermediate layers in oxides/GaN(0001) by electron microscopy2018

    • Author(s)
      Yoshihiro Irokawa, Kazutaka Mitsuishi, Toshihide Nabatame, Koji Kimoto and Yasuo Koide
    • Journal Title

      Japanese Journal of Applied Physics

      Volume: 57 Pages: 118003-118003

    • NAID

      210000149779

    • Related Report
      2018 Research-status Report
    • Peer Reviewed
  • [Journal Article] Low-energy ion scattering spectroscopy and reflection high-energy electron diffraction of native oxides on GaN(0001)2017

    • Author(s)
      Yoshihiro Irokawa, Taku T. Suzuki, Kazuya Yuge, Akihiko Ohi, Toshihide Nabatame, Koji Kimoto, Tsuyoshi Ohnishi, Kazutaka Mitsuishi, and Yasuo Koide
    • Journal Title

      Japanese Journal of Applied Physics

      Volume: 56 Pages: 128004-128004

    • NAID

      210000148476

    • Related Report
      2017 Research-status Report
    • Peer Reviewed
  • [Journal Article] Electron microscopy studies of the intermediate layers at the SiO2/GaN interface2017

    • Author(s)
      Kazutaka Mitsuishi, Koji Kimoto, Yoshihiro Irokawa, Taku Suzuki, Kazuya Yuge, Toshihide Nabatame, Shinya Takashima, Katsunori Ueno, Masaharu Edo, Kiyokazu Nakagawa, and Yasuo Koide
    • Journal Title

      Japanese Journal of Applied Physics

      Volume: 56 Pages: 110312-110312

    • NAID

      210000148411

    • Related Report
      2017 Research-status Report
    • Peer Reviewed
  • [Presentation] Comprehensive study of native oxides on GaN2018

    • Author(s)
      Yoshihiro Irokawa, Kazutaka Mitsuishi, Taku T. Suzuki, Kazuya Yuge, Akihiko Ohi, Toshihide Nabatame, Tsuyoshi Ohnishi, Koji Kimoto and Yasuo Koide
    • Organizer
      The International Workshop on Nitride Semiconductors 2018 (IWN 2018)
    • Related Report
      2018 Research-status Report
    • Int'l Joint Research
  • [Presentation] Crystalline intermediate layers in oxides/GaN interfaces2018

    • Author(s)
      Yoshihiro Irokawa, Kazutaka Mitsuishi, Toshihide Nabatame, Koji Kimoto and Yasuo Koide
    • Organizer
      The International Workshop on Nitride Semiconductors 2018 (IWN 2018)
    • Related Report
      2018 Research-status Report
    • Int'l Joint Research
  • [Presentation] Surface analysis of native oxides on GaN(0001): An LEIS and RHEED study2017

    • Author(s)
      Yoshihiro Irokawa, Taku T. Suzuki, Kazuya Yuge, Akihiko Ohi, Toshihide Nabatame, Koji Kimoto, Tsuyoshi Ohnishi, Kazutaka Mitsuishi, and Yasuo Koide
    • Organizer
      第18回「イオンビームによる表面・界面解析」特別研究会
    • Related Report
      2017 Research-status Report
    • Int'l Joint Research
  • [Presentation] 水素とGaNデバイスの相互作用機構の研究2017

    • Author(s)
      色川芳宏
    • Organizer
      第16回 GaN研究戦略会議_研究WG
    • Related Report
      2017 Research-status Report
    • Invited
  • [Presentation] 窒化ガリウムトランジスタに原子レベルで平坦な結晶層を新発見2017

    • Author(s)
      色川芳宏、三石和貴
    • Organizer
      電気学会「次世代化合物半導体デバイスの機能と応用(第2期)」調査専門委員会
    • Related Report
      2017 Research-status Report
    • Invited
  • [Patent(Industrial Property Rights)] 半導体装置および半導体装置の製造方法2018

    • Inventor(s)
      色川、生田目、三石、木本、小出
    • Industrial Property Rights Holder
      物質・材料研究機構
    • Industrial Property Rights Type
      特許
    • Industrial Property Number
      2018-144690
    • Filing Date
      2018
    • Related Report
      2018 Research-status Report
  • [Patent(Industrial Property Rights)] 半導体装置および半導体装置の製造方法2018

    • Inventor(s)
      色川、生田目、三石、木本、小出
    • Industrial Property Rights Holder
      物質・材料研究機構
    • Industrial Property Rights Type
      特許
    • Industrial Property Number
      2018-144691
    • Filing Date
      2018
    • Related Report
      2018 Research-status Report
  • [Patent(Industrial Property Rights)] 半導体基板、半導体基板の製造方法およびそれを用いた半導体装置2018

    • Inventor(s)
      色川、生田目、三石、木本、小出
    • Industrial Property Rights Holder
      物質・材料研究機構
    • Industrial Property Rights Type
      特許
    • Industrial Property Number
      2018-243227
    • Filing Date
      2018
    • Related Report
      2018 Research-status Report
  • [Patent(Industrial Property Rights)] 窒化ガリウム系の半導体装置及びその製造方法2017

    • Inventor(s)
      生田目俊秀、色川 芳宏、他6名
    • Industrial Property Rights Holder
      物質・材料研究機構、富士電機
    • Industrial Property Rights Type
      特許
    • Industrial Property Number
      2017-129329
    • Filing Date
      2017
    • Related Report
      2017 Research-status Report
  • [Patent(Industrial Property Rights)] ガリウム窒化物半導体基板、ガリウム窒化物半導体装置、撮像素子およびそれらの製造方法2017

    • Inventor(s)
      生田目俊秀、色川 芳宏、他3名
    • Industrial Property Rights Holder
      物質・材料研究機構
    • Industrial Property Rights Type
      特許
    • Industrial Property Number
      2017-128960
    • Filing Date
      2017
    • Related Report
      2017 Research-status Report

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Published: 2017-04-28   Modified: 2022-01-27  

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