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In-situ temperature measurements and impurity profile control on SiC surface during wet chemical laser doping

Research Project

Project/Area Number 17K06387
Research Category

Grant-in-Aid for Scientific Research (C)

Allocation TypeMulti-year Fund
Section一般
Research Field Electron device/Electronic equipment
Research InstitutionSojo University (2018-2019)
Kyushu University (2017)

Principal Investigator

Ikeda Akihiro  崇城大学, 情報学部, 准教授 (60315124)

Project Period (FY) 2017-04-01 – 2020-03-31
Project Status Completed (Fiscal Year 2019)
Budget Amount *help
¥4,810,000 (Direct Cost: ¥3,700,000、Indirect Cost: ¥1,110,000)
Fiscal Year 2019: ¥1,040,000 (Direct Cost: ¥800,000、Indirect Cost: ¥240,000)
Fiscal Year 2018: ¥1,040,000 (Direct Cost: ¥800,000、Indirect Cost: ¥240,000)
Fiscal Year 2017: ¥2,730,000 (Direct Cost: ¥2,100,000、Indirect Cost: ¥630,000)
Keywordsレーザドーピング / 4H-SiC / パルス波形整形 / 低コンタクト抵抗 / CO2レーザ / パルス波形制御 / オーミックコンタクト / 2色法 / 表面温度 / 拡散係数 / コンタクト抵抗 / ロングパルス / アルミ / 電子デバイス・機器
Outline of Final Research Achievements

The laser pulse width was expanded with a beam expander. The beam expander was composed of optics which split the original laser beam into two beams using a half mirror and the two beams are recombined by using another half mirror. Al doping depth was increased from 100 nm to 230 nm by using the beam expander. Also, temperature on the SiC during the laser doping was measured in-situ by two color pyrometry. The SiC temperature was ~3100 K, which was close to the sublimation temperature of SiC. Furthermore, specific contact resistance between the Al doped region and Ti/Al metal was measured by TLM method. The specific contact resistance was 4E-6 Ω・cm2. The obtained specific contact resistance was consistent to the Al doping concentration of 1E21 /cm3 on the SiC surface.

Academic Significance and Societal Importance of the Research Achievements

SiCは次世代パワーデバイス用の材料として期待されている.鉄道車両のインバータなど広く使われ始めているが,一方で価格が高くて普及における課題となっている.本研究で開発した光路差を用いたビーム波形の整形ができるレーザドーピング装置を用いると,従来SiCデバイス作製に用いられてきたイオン注入と同様に,不純物プロファイル制御ができる可能性がある.イオン注入工程はデバイス作製コストの大部分を占めており,これを低コストのレーザドーピング装置と置き換えることで,SiCデバイスのより一層の普及に貢献すると期待される.

Report

(4 results)
  • 2019 Annual Research Report   Final Research Report ( PDF )
  • 2018 Research-status Report
  • 2017 Research-status Report
  • Research Products

    (11 results)

All 2019 2018 2017

All Journal Article (4 results) (of which Peer Reviewed: 4 results,  Acknowledgement Compliant: 1 results) Presentation (7 results) (of which Int'l Joint Research: 7 results)

  • [Journal Article] Formation of low resistance contacts to p-type 4H-SiC using laser doping with an Al thin-film dopant source2019

    • Author(s)
      K. Okamoto, T. Kikuchi, A. Ikeda, H. Ikenoue, T. Asano
    • Journal Title

      Japanese Journal of Appied Physics

      Volume: 58 Issue: SD Pages: SDDF13-SDDF13

    • DOI

      10.7567/1347-4065/ab12c3

    • NAID

      210000156255

    • Related Report
      2019 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Increasing Laser-Doping Depth of Al in 4H-SiC by Using Expanded-Pulse Excimer Laser2019

    • Author(s)
      A. Ikeda, T. Shimokawa, H. Ikenoue, T. Asano
    • Journal Title

      Materials Science Forum

      Volume: 963 Pages: 412-415

    • DOI

      10.4028/www.scientific.net/msf.963.412

    • Related Report
      2019 Annual Research Report
    • Peer Reviewed
  • [Journal Article] High-concentration, Room Temperature, and Low-cost Excimer Laser Doping for 4H-SiC Power Device Fabrication2019

    • Author(s)
      K. Imokawa, T. Kikuchi, D. Nakamura, A. Ikeda
    • Journal Title

      Materials Science Forum

      Volume: 963 Pages: 403-406

    • DOI

      10.4028/www.scientific.net/msf.963.403

    • Related Report
      2019 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Increased doping depth of Al in wet-chemical laser doping of 4H-SiC by expanding laser pulse2017

    • Author(s)
      A. Ikeda, D. Marui, R. Sumina, H. Ikenoue, T. Asano
    • Journal Title

      Materials Science in Semiconductor Processing

      Volume: 印刷中 Pages: 193-196

    • DOI

      10.1016/j.mssp.2016.11.036

    • Related Report
      2017 Research-status Report
    • Peer Reviewed / Acknowledgement Compliant
  • [Presentation] Laser doping for 4H-SiC power-device fabrication with laser pulse-duration controller2019

    • Author(s)
      T. Kikuchi, K. Imokawa, A. Ikeda, D. Nakamura, T. Asano, H. Ikenoue
    • Organizer
      LiM 2019 - Lasers in Manufacturing
    • Related Report
      2019 Annual Research Report
    • Int'l Joint Research
  • [Presentation] Room Temperature Processing of Low Resistance Contacts to p-type 4H-SiC using Laser Doping2019

    • Author(s)
      K. Okamoto, A. Ikeda, T. Kikuchi, H. Ikenoue, A. Asano
    • Organizer
      International Conference on Silicon Carbide and Related Materials 2019
    • Related Report
      2019 Annual Research Report
    • Int'l Joint Research
  • [Presentation] Increasing Laser-Doping Depth of Al in 4H-SiC by Using Expanded-Pulse Excimer Laser2018

    • Author(s)
      A. Ikeda, T. Shimokawa , H. Ikenoue, T. Asano
    • Organizer
      European Conference on Silicon Carbide and Related Materials (ECSCRM 2018)
    • Related Report
      2018 Research-status Report
    • Int'l Joint Research
  • [Presentation] High-concentration, Room Temperature, and Low-cost Excimer Laser Doping for 4H-SiC Power Device Fabrication2018

    • Author(s)
      K. Imokawa, T. Kikuchi, D. Nakamura, A. Ikeda, T. Asano, H. Ikenoue
    • Organizer
      European Conference on Silicon Carbide and Related Materials (ECSCRM 2018)
    • Related Report
      2018 Research-status Report
    • Int'l Joint Research
  • [Presentation] Low-temperature, high-concentration laser doping of nitrogen to 4H-SiC for low-contact-resistance fabrication2018

    • Author(s)
      T. Kikuchi, K. Imokawa, A. Ikeda, D. Nakamura, T. Asano, H. Ikenoue
    • Organizer
      2018 International Conference on Solid State Devices and Materials (SSDM 2018)
    • Related Report
      2018 Research-status Report
    • Int'l Joint Research
  • [Presentation] Formation of Low Resistance Contacts to p-type 4H-SiC by Using Laser Doping with Al Thin-Film Dopant Source2018

    • Author(s)
      K. Okamoto, T. Kikuchi, A. Ikeda, H. Ikenoue and T. Asano
    • Organizer
      31th International Microprocesses and Nanotechnology conference (MNC 2018)
    • Related Report
      2018 Research-status Report
    • Int'l Joint Research
  • [Presentation] Improved doping performance of laser Al doping in 4H-SiC by substrate heating2017

    • Author(s)
      A. Ikeda, R. Sumina, R. Tsutsui, A. Suwa, H. Ikenoue, T. Asano
    • Organizer
      ICSCRM 2017
    • Related Report
      2017 Research-status Report
    • Int'l Joint Research

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Published: 2017-04-28   Modified: 2021-02-19  

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