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Main and Side Reaction Design for Exceeding the chemical vapor deposition rate limit

Research Project

Project/Area Number 17K06904
Research Category

Grant-in-Aid for Scientific Research (C)

Allocation TypeMulti-year Fund
Section一般
Research Field Reaction engineering/Process system
Research InstitutionYokohama National University

Principal Investigator

Habuka Hitoshi  横浜国立大学, 大学院工学研究院, 教授 (40323927)

Project Period (FY) 2017-04-01 – 2020-03-31
Project Status Completed (Fiscal Year 2019)
Budget Amount *help
¥4,680,000 (Direct Cost: ¥3,600,000、Indirect Cost: ¥1,080,000)
Fiscal Year 2019: ¥1,560,000 (Direct Cost: ¥1,200,000、Indirect Cost: ¥360,000)
Fiscal Year 2018: ¥1,560,000 (Direct Cost: ¥1,200,000、Indirect Cost: ¥360,000)
Fiscal Year 2017: ¥1,560,000 (Direct Cost: ¥1,200,000、Indirect Cost: ¥360,000)
Keywordsシリコンエピタキシャル成長 / トリクロロシラン / ジクロロシラン / 三塩化ホウ素 / モノメチルシラン / 並列ラングミュア過程 / 副生成物 / 化学気相堆積 / 反応機構
Outline of Final Research Achievements

In order to exceed the theoretical limit of the chemical vapor deposition (CVD) rate which was caused by the saturation of the Langmuir surface reaction process, multiple surface reactions were employed and verified. For example, the main precursor (chlorosilanes) and the accelerator (SiHx, BCl3) simultaneously react at the silicon surface to obtain 1.5 – 2 times larger deposition rate with the decreasing byproducts. From this study, new process achieving significantly high productivity was designed.

Academic Significance and Societal Importance of the Research Achievements

半導体製膜においてホウ素添加するためには一般にジボランが用いられるが、ジボランは猛毒・可燃性である。これに対して三塩化ホウ素は不燃性であると共に毒性が弱いことから半導体プロセスを安全にできる効果がある。三塩化ホウ素は一般にはエッチングガスとしても使用されていることから、化学反応における挙動を把握することにより同一のガスを様々な用途に用いる可能性が拓けるので便利である。本研究により、安全なドーピングと製膜・エッチングを制御できる可能性が示されたことから、その反応機構が把握されるという学術的意義があり、同時に、半導体プロセスと材料を安全にしつつ効率化・簡略化を図るという社会的意義がある。

Report

(4 results)
  • 2019 Annual Research Report   Final Research Report ( PDF )
  • 2018 Research-status Report
  • 2017 Research-status Report
  • Research Products

    (11 results)

All 2020 2019 2018 2017

All Journal Article (4 results) (of which Peer Reviewed: 4 results) Presentation (7 results) (of which Int'l Joint Research: 3 results)

  • [Journal Article] Deposition and Etching Behaviour of Boron Trichloride Gas at Silicon Surface2020

    • Author(s)
      Mitsuko Muroi, Ayami Yamada, Ayumi Saito, and Hitoshi Habuka
    • Journal Title

      , Journal of Crystal Growth

      Volume: 529 Pages: 125301-125301

    • DOI

      10.1016/j.jcrysgro.2019.125301

    • NAID

      120006796059

    • Related Report
      2019 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Silicon epitaxial growth accelerated by parallel Langmuir processes using SiH2Cl2 and SiH3CH3 gases2018

    • Author(s)
      Yamada Ayami、Muroi Mitsuko、Watanabe Toru、Saito Ayumi、Sakurai Ayumi、Habuka Hitoshi
    • Journal Title

      Semiconductor Science and Technology

      Volume: 33 Issue: 9 Pages: 094002-094002

    • DOI

      10.1088/1361-6641/aad294

    • NAID

      120006630613

    • Related Report
      2018 Research-status Report
    • Peer Reviewed
  • [Journal Article] Increase in silicon film deposition rate in a SiHCl 3 -SiH x -H 2 system2017

    • Author(s)
      Saito Ayumi、Sakurai Ayumi、Habuka Hitoshi
    • Journal Title

      Journal of Crystal Growth

      Volume: 468 Pages: 204-207

    • DOI

      10.1016/j.jcrysgro.2016.10.035

    • Related Report
      2017 Research-status Report
    • Peer Reviewed
  • [Journal Article] Parallel langmuir processes for silicon epitaxial growth in a SiHCl 3 -SiH x -H 2 system2017

    • Author(s)
      Watanabe Toru、Yamada Ayami、Saito Ayumi、Sakurai Ayumi、Habuka Hitoshi
    • Journal Title

      Materials Science in Semiconductor Processing

      Volume: 72 Pages: 134-138

    • DOI

      10.1016/j.mssp.2017.09.034

    • Related Report
      2017 Research-status Report
    • Peer Reviewed
  • [Presentation] Boron trichloride gas behaviour for chemical vapour deposition and etching at silicon surface2019

    • Author(s)
      Mitsuko Muroi, Ayumi Saito and Hitoshi Habuka
    • Organizer
      19th International Conference on Crystal Growth and Epitaxy (ICCGE-19)
    • Related Report
      2019 Annual Research Report
    • Int'l Joint Research
  • [Presentation] シリコン表面における三塩化ホウ素ガスの化学反応2019

    • Author(s)
      室井 光子, 山田 彩未, 齋藤 あゆ美, 羽深 等
    • Organizer
      化学工学会横浜大会
    • Related Report
      2019 Annual Research Report
  • [Presentation] シリコン表面における三塩化ホウ素ガスの化学反応2019

    • Author(s)
      室井光子,山田彩未,齋藤あゆ美,羽深 等
    • Organizer
      第80回応用物理学会秋季学術講演会
    • Related Report
      2019 Annual Research Report
  • [Presentation] Silicon epitaxial growth rate accelerated by parallel langmuir processes2018

    • Author(s)
      Ayami Yamada, Toru Watanabe, Ayumi Saito, Ayumi Sakurai and Hitoshi Habuka
    • Organizer
      The first joint conference of international SiGe technology and device meeting (ISTDM) and international conference on silicon epitaxy and heterostructures (ICSI)
    • Related Report
      2018 Research-status Report
    • Int'l Joint Research
  • [Presentation] SiH2Cl2-SiHx-H2系によるシリコン薄膜成長速度増大方法2018

    • Author(s)
      室井光子,山田彩未,羽深等
    • Organizer
      第79回応用物理学会秋季学術講演会
    • Related Report
      2018 Research-status Report
  • [Presentation] Silicon epitaxial growth rate increased by adding SiHx to a SiHCl3-H2 system2017

    • Author(s)
      Toru Watanabe, Ayami Yamada, Ayumi Saito, Ayumi Sakurai, Hitoshi Habuka
    • Organizer
      Joint EuroCVD-BalticALD 2017
    • Related Report
      2017 Research-status Report
    • Int'l Joint Research
  • [Presentation] SiHCl3-SiHx-H2系シリコンエピタキシャル成長の反応速度解析2017

    • Author(s)
      入倉 健太, 渡部 亨、羽深等
    • Organizer
      第78回応用物理学会秋季学術講演会
    • Related Report
      2017 Research-status Report

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Published: 2017-04-28   Modified: 2021-02-19  

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