Germanene on Insulators: Towards the realization of a 2D topological insulator
| Project/Area Number |
17K14116
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| Research Category |
Grant-in-Aid for Young Scientists (B)
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| Allocation Type | Multi-year Fund |
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| Research Field |
Thin film/Surface and interfacial physical properties
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| Research Institution | Japan Advanced Institute of Science and Technology |
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Principal Investigator |
FLEURENCE ANTOINE 北陸先端科学技術大学院大学, 先端科学技術研究科, 講師 (30628821)
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| Project Period (FY) |
2017-04-01 – 2019-03-31
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| Project Status |
Completed (Fiscal Year 2018)
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| Budget Amount *help |
¥4,290,000 (Direct Cost: ¥3,300,000、Indirect Cost: ¥990,000)
Fiscal Year 2018: ¥1,950,000 (Direct Cost: ¥1,500,000、Indirect Cost: ¥450,000)
Fiscal Year 2017: ¥2,340,000 (Direct Cost: ¥1,800,000、Indirect Cost: ¥540,000)
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| Keywords | 2D materials / germanium / Germanene / ゲルマネン / スタネン |
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| Outline of Final Research Achievements |
This project was dedicated to the fabrication and the study of two-dimensional materials made of germanium and having a high potential for various applications and fundamental science. Its main objective was the realization of germanene, a graphene-like honeycomb lattice. Among the Ge structures we investigated, a single Ge layer spontaneously forming on ZrB2 thin films was identified as a bi-triangular lattice. This Ge structure features a flat band in its band structure from which exotic properties are predicted to emerge. We also demonstrated the feasibility of a band structure engineering in two-dimensional SiGe alloys verified experimentally in the one we fabricated by depositing Ge atoms on silicene on ZrB2. The project also addressed the preparation of ideal substrates for the growth of germanene. Good quality (0001)-oriented InSe thin films were successfully grown on Ge(111), which may allow for the lattice-matching Van der Waals growth of free-standing-like germanene.
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| Academic Significance and Societal Importance of the Research Achievements |
This project contributed to the development of two-dimensional materials which are of great interest for both applications and fundamental science as they possess novel properties and are solutions to scale down the dimensions of electronics components without increasing the heat dissipation.
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Report
(3 results)
Research Products
(20 results)
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[Presentation] Band engineering in silicene-Ge alloy2018
Author(s)
Fleurence A、Awatani Y、Wiggers F、Yonezawa T、Wallace S、Huet C、Yamada-Takamura Y
Organizer
14th international conference on atomically controlled surfaces Interfaces and nanostructures 2018 & 26th international colloquium on scanning tunneling microscopy
Related Report
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