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Germanene on Insulators: Towards the realization of a 2D topological insulator

Research Project

Project/Area Number 17K14116
Research Category

Grant-in-Aid for Young Scientists (B)

Allocation TypeMulti-year Fund
Research Field Thin film/Surface and interfacial physical properties
Research InstitutionJapan Advanced Institute of Science and Technology

Principal Investigator

FLEURENCE ANTOINE  北陸先端科学技術大学院大学, 先端科学技術研究科, 講師 (30628821)

Project Period (FY) 2017-04-01 – 2019-03-31
Project Status Completed (Fiscal Year 2018)
Budget Amount *help
¥4,290,000 (Direct Cost: ¥3,300,000、Indirect Cost: ¥990,000)
Fiscal Year 2018: ¥1,950,000 (Direct Cost: ¥1,500,000、Indirect Cost: ¥450,000)
Fiscal Year 2017: ¥2,340,000 (Direct Cost: ¥1,800,000、Indirect Cost: ¥540,000)
Keywords2D materials / germanium / Germanene / ゲルマネン / スタネン
Outline of Final Research Achievements

This project was dedicated to the fabrication and the study of two-dimensional materials made of germanium and having a high potential for various applications and fundamental science. Its main objective was the realization of germanene, a graphene-like honeycomb lattice. Among the Ge structures we investigated, a single Ge layer spontaneously forming on ZrB2 thin films was identified as a bi-triangular lattice. This Ge structure features a flat band in its band structure from which exotic properties are predicted to emerge. We also demonstrated the feasibility of a band structure engineering in two-dimensional SiGe alloys verified experimentally in the one we fabricated by depositing Ge atoms on silicene on ZrB2. The project also addressed the preparation of ideal substrates for the growth of germanene. Good quality (0001)-oriented InSe thin films were successfully grown on Ge(111), which may allow for the lattice-matching Van der Waals growth of free-standing-like germanene.

Academic Significance and Societal Importance of the Research Achievements

This project contributed to the development of two-dimensional materials which are of great interest for both applications and fundamental science as they possess novel properties and are solutions to scale down the dimensions of electronics components without increasing the heat dissipation.

Report

(3 results)
  • 2018 Annual Research Report   Final Research Report ( PDF )
  • 2017 Research-status Report
  • Research Products

    (20 results)

All 2019 2018 2017

All Journal Article (4 results) (of which Int'l Joint Research: 4 results,  Peer Reviewed: 4 results,  Open Access: 1 results) Presentation (15 results) (of which Invited: 10 results) Book (1 results)

  • [Journal Article] Van der Waals integration of silicene and hexagonal boron nitride2019

    • Author(s)
      Wiggers F B、Fleurence A、Aoyagi K、Yonezawa T、Yamada-Takamura Y、Feng H、Zhuang J、Du Y、Kovalgin A Y、de Jong M P
    • Journal Title

      2D Materials

      Volume: 6 Issue: 3 Pages: 035001-035007

    • DOI

      10.1088/2053-1583/ab0a29

    • Related Report
      2018 Annual Research Report
    • Peer Reviewed / Int'l Joint Research
  • [Journal Article] Nanomechanical Properties of Epitaxial Silicene Revealed by Noncontact Atomic Force Microscopy2018

    • Author(s)
      Nogami Makoto、Fleurence Antoine、Yamada-Takamura Yukiko、Tomitori Masahiko
    • Journal Title

      Advanced Materials Interfaces

      Volume: 6 Issue: 2 Pages: 1801278-1801278

    • DOI

      10.1002/admi.201801278

    • Related Report
      2018 Annual Research Report
    • Peer Reviewed / Int'l Joint Research
  • [Journal Article] Atomistic study of GaSe/Ge(111) interface formed through van der Waals epitaxy2018

    • Author(s)
      Yonezawa Takahiro、Murakami Tatsuya、Higashimine Koichi、Fleurence Antoine、Oshima Yoshifumi、Yamada-Takamura Yukiko
    • Journal Title

      Surface and Interface Analysis

      Volume: 51 Issue: 1 Pages: 95-99

    • DOI

      10.1002/sia.6557

    • Related Report
      2018 Annual Research Report
    • Peer Reviewed / Int'l Joint Research
  • [Journal Article] Guided Molecular Assembly on a Locally Reactive 2D Material2017

    • Author(s)
      Warner Ben、Gill Tobias G.、Caciuc Vasile、Atodiresei Nicolae、Fleurence Antoine、Yoshida Yasuo、Hasegawa Yukio、Bl?gel Stefan、Yamada-Takamura Yukiko、Hirjibehedin Cyrus F.
    • Journal Title

      Advanced Materials

      Volume: 29 Issue: 43 Pages: 1703929-1703929

    • DOI

      10.1002/adma.201703929

    • Related Report
      2017 Research-status Report
    • Peer Reviewed / Open Access / Int'l Joint Research
  • [Presentation] Influence of strain at GaSe/Ge(111) interface formed through Van der Waals epitaxy2018

    • Author(s)
      Yonezawa T、Nitta H、Murakami T、Higashimine K、Fleurence A、Oshima Y、Yamada-Takamura Y
    • Organizer
      14th international conference on atomically controlled surfaces Interfaces and nanostructures 2018 & 26th international colloquium on scanning tunneling microscopy
    • Related Report
      2018 Annual Research Report
  • [Presentation] Nanomechanical responses of epitaxial silicene on ZrB2(0001) examined by non-contact atomic force microscopy2018

    • Author(s)
      Nogami M、Fleurence A、Yamada-Takamura Y、Tomitori M
    • Organizer
      14th international conference on atomically controlled surfaces Interfaces and nanostructures 2018 & 26th international colloquium on scanning tunneling microscopy
    • Related Report
      2018 Annual Research Report
  • [Presentation] Band engineering in silicene-Ge alloy2018

    • Author(s)
      Fleurence A、Awatani Y、Wiggers F、Yonezawa T、Wallace S、Huet C、Yamada-Takamura Y
    • Organizer
      14th international conference on atomically controlled surfaces Interfaces and nanostructures 2018 & 26th international colloquium on scanning tunneling microscopy
    • Related Report
      2018 Annual Research Report
  • [Presentation] Epitaxial silicene on ZrB2(0001)2018

    • Author(s)
      Fleurence A
    • Organizer
      14th International Conference on Diffusion i Liquids and Solids
    • Related Report
      2018 Annual Research Report
    • Invited
  • [Presentation] Epitaxial silicene on ZrB2(0001) : a 2D allotrope of silicon2018

    • Author(s)
      Fleurence A
    • Organizer
      Seminar at MESA+, University of Twente
    • Related Report
      2018 Annual Research Report
    • Invited
  • [Presentation] Epitaxial silicene on ZrB2(0001) : a 2D allotrope of silicon2018

    • Author(s)
      Fleurence A
    • Organizer
      CMOS emerging technologies symposium
    • Related Report
      2018 Annual Research Report
    • Invited
  • [Presentation] Epitaxial silicene on ZrB2(0001): a 2D allotrope of silicon2018

    • Author(s)
      A. Fleurence
    • Organizer
      Seminar at LMI, University of Lyon I
    • Related Report
      2017 Research-status Report
    • Invited
  • [Presentation] Epitaxial silicene on ZrB2(0001): a 2D allotrope of silicon2018

    • Author(s)
      A. Fleurence
    • Organizer
      Seminar at INL, Ecole Centrale Lyon
    • Related Report
      2017 Research-status Report
    • Invited
  • [Presentation] Epitaxial silicene on ZrB2(0001): a 2D allotrope of silicon2018

    • Author(s)
      A. Fleurence
    • Organizer
      Seminar at CEMES
    • Related Report
      2017 Research-status Report
    • Invited
  • [Presentation] Epitaxial silicene on ZrB2(0001):Fabrication and properties2018

    • Author(s)
      A. Fleurence
    • Organizer
      International workshop on synthetic elemental silicene-like materials
    • Related Report
      2017 Research-status Report
    • Invited
  • [Presentation] Epitaxial silicene on ZrB2(0001): a 2D allotrope of silicon2018

    • Author(s)
      A. Fleurence
    • Organizer
      Seminar at Pprime, University of Poitiers
    • Related Report
      2017 Research-status Report
    • Invited
  • [Presentation] Epitaxial silicene on ZrB2(0001): a 2D allotrope of silicon2017

    • Author(s)
      A. Fleurence
    • Organizer
      Nano S&T 2017
    • Related Report
      2017 Research-status Report
    • Invited
  • [Presentation] Epitaxial silicene on ZrB2(0001): a 2D allotrope of silicon2017

    • Author(s)
      A. Fleurence
    • Organizer
      EMN Conference on 2D Materials
    • Related Report
      2017 Research-status Report
    • Invited
  • [Presentation] Ge(111) 基板にファンデルワールスエピタキシー成長した GaSe 薄膜の界面構造2017

    • Author(s)
      東嶺 孝一、米澤 隆宏、村上 達也、アントワーヌ フロランス、高村 ( 山田 ) 由起子、大島 義文
    • Organizer
      第73回日本顕微鏡学会学術講演会
    • Related Report
      2017 Research-status Report
  • [Presentation] Atomistic study of GaSe/Ge(111) interface formed through van der Waals epitaxy (poster presentation)2017

    • Author(s)
      T. Yonezawa, T. Murakami, K. Higashimine, A. Fleurence, Y. Oshima, and Y. Yamada-Takamura
    • Organizer
      Atomic Level Characterization (ALC) '17
    • Related Report
      2017 Research-status Report
  • [Book] Encyclopedia of interfacial chemistry: Surface Science and Electrochemistry2018

    • Author(s)
      A Fleurence
    • Publisher
      Silicene: When silicon mimics graphene
    • ISBN
      9780128098943
    • Related Report
      2017 Research-status Report

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Published: 2017-04-28   Modified: 2020-03-30  

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