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Development of ultra-wide bandgap amorphous oxide semiconductors for photo-stable electronic devices

Research Project

Project/Area Number 17K14548
Research Category

Grant-in-Aid for Young Scientists (B)

Allocation TypeMulti-year Fund
Research Field Device related chemistry
Research InstitutionTokyo Institute of Technology

Principal Investigator

Kim Junghwan  東京工業大学, 元素戦略研究センター, 助教 (90780586)

Project Period (FY) 2017-04-01 – 2019-03-31
Project Status Completed (Fiscal Year 2018)
Budget Amount *help
¥4,420,000 (Direct Cost: ¥3,400,000、Indirect Cost: ¥1,020,000)
Fiscal Year 2018: ¥2,210,000 (Direct Cost: ¥1,700,000、Indirect Cost: ¥510,000)
Fiscal Year 2017: ¥2,210,000 (Direct Cost: ¥1,700,000、Indirect Cost: ¥510,000)
Keywords酸化物TFT / アモルファス酸化物半導体 / TFT / 光劣化 / 酸化物半導体デバイス / 光劣化のない電子デバイス
Outline of Final Research Achievements

The transparency of oxide semiconductors is a significant feature that enables the fabrication of fully transparent electronics. Unfortunately, practical transparent electronics using amorphous oxide semiconductors (AOSs) have not yet been realized, owing to significant photo-instabilities of these materials. In this work, we examined the electronic structures of a variety of AOSs and found that their ionization potentials vary greatly, depending upon the specific metal cations. This finding enabled us to  increase the optical bandgap by modifying the VBM levels, resulting in a high mobility of 9 cm2/Vs and an ultra-wide bandgap of 3.8 eV for amorphous Zn-Ga-O (a-ZGO).

Academic Significance and Societal Importance of the Research Achievements

アモルファス酸化物半導体は低温プロセスながらも高い性能を示すため、非常に魅力のある半導体材料である。また、アモルファス酸化物半導体の持つ透明さは透明エレクトロニクスの実現を期待させる。しかし、従来のアモルファス酸化物半導体の持つ光劣化により透明のまま使うことが出来ない。本研究はこのような問題点を解決しており、また、高性能、高安定なアモルファス酸化物半導体の設計指針を提案している。このような結果は今後、透明素子のような次世代エレクトロニクスの開発に繋がると考えられる。

Report

(3 results)
  • 2018 Annual Research Report   Final Research Report ( PDF )
  • 2017 Research-status Report
  • Research Products

    (12 results)

All 2019 2018 2017

All Journal Article (5 results) (of which Peer Reviewed: 5 results,  Open Access: 3 results,  Acknowledgement Compliant: 1 results) Presentation (7 results) (of which Int'l Joint Research: 3 results,  Invited: 7 results)

  • [Journal Article] Ultra-wide bandgap amorphous oxide semiconductors for NBIS-free thin-film transistors2019

    • Author(s)
      Kim Junghwan、Bang Joonho、Nakamura Nobuhiro、Hosono Hideo
    • Journal Title

      APL Materials

      Volume: 7 Issue: 2 Pages: 022501-022501

    • DOI

      10.1063/1.5053762

    • Related Report
      2018 Annual Research Report
    • Peer Reviewed / Open Access
  • [Journal Article] Transition metal-doped amorphous oxide semiconductor thin film phosphor, chromium-doped amorphous gallium oxide2019

    • Author(s)
      Keisuke Ide, Yuki Futakado, Naoto Watanabe, Junghwan Kim, Takayoshi Katase, Hidenori Hiramatsu, Hideo Hosono, Toshio Kamiya
    • Journal Title

      Phys. Status Solidi A

      Volume: 216 Issue: 5 Pages: 1800198-1800198

    • DOI

      10.1002/pssa.201800198

    • Related Report
      2018 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Electron Affinity Control of Amorphous Oxide Semiconductors and Its Applicability to Organic Electronics2018

    • Author(s)
      Kim Junghwan、Yamamoto Koji、Iimura Soshi、Ueda Shigenori、Hosono Hideo
    • Journal Title

      Advanced Materials Interfaces

      Volume: 5 Issue: 23 Pages: 1801307-1801307

    • DOI

      10.1002/admi.201801307

    • Related Report
      2018 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Multiple Color Inorganic Thin-Film Phosphor, RE-Doped Amorphous Gallium Oxide (RE = Rare Earth: Pr, Sm, Tb, and Dy), Deposited at Room Temperature2018

    • Author(s)
      N. Watanabe, K. Ide, J. Kim, T. Katase, H. Hiramatsu, H. Hosono, T. Kamiya
    • Journal Title

      Phys. Status Solidi A

      Volume: N/A Issue: 5 Pages: 1700833-1700833

    • DOI

      10.1002/pssa.201700833

    • Related Report
      2018 Annual Research Report
    • Peer Reviewed / Open Access
  • [Journal Article] Conversion of an ultra-wide bandgap amorphous oxide insulator to a semiconductor2017

    • Author(s)
      J. Kim, T. Sekiya, N. Miyokawa, N. Watanabe, K. Kimoto, K. Ide, Y. Toda, S. Ueda, N. Ohashi, H. Hiramatsu, H. Hosono and T. Kamiya,
    • Journal Title

      NPG Asia Materials

      Volume: 9 Issue: 3 Pages: e359-e359

    • DOI

      10.1038/am.2017.20

    • Related Report
      2017 Research-status Report
    • Peer Reviewed / Open Access / Acknowledgement Compliant
  • [Presentation] Stability Issues of High-mobility Oxide TFTs2019

    • Author(s)
      Junghwan Kim, Yu-Shien Shiah, Joonho Bang, Katsumi Abe, Hideo Hosono
    • Organizer
      International Thin-Film Transistor Conference (ITC) 2019
    • Related Report
      2018 Annual Research Report
    • Int'l Joint Research / Invited
  • [Presentation] Development of Ultra-Wide Bandgap Amorphous Oxide Semiconductors for Future Electronics2018

    • Author(s)
      Junghwan kim, Hideo Hosono
    • Organizer
      AiMES 2018
    • Related Report
      2018 Annual Research Report
    • Int'l Joint Research / Invited
  • [Presentation] Hydrogen Anion and Subgap States in Amorphous In-Ga-Zn-O Thin Films2018

    • Author(s)
      Joonho Bang, Satoru Matsuishi, Junghwan Kim, Hideo Hosono
    • Organizer
      International Meeting on Information Display (IMID) 2018
    • Related Report
      2018 Annual Research Report
    • Int'l Joint Research / Invited
  • [Presentation] Material Design of Ultra-Wide Bandgap AOSs and Their Applications in Photo-Stable Electronic Devices2017

    • Author(s)
      Junghwan Kim, Nobuhiro Nakamura, Toshio Kamiya, Hideo Hosono
    • Organizer
      AM-FPD
    • Related Report
      2017 Research-status Report
    • Invited
  • [Presentation] Correlation between Electronic Structures and Instabilities in Amorphous Oxide Semiconductors2017

    • Author(s)
      Junghwan Kim, Toshio Kamiya, Hideo Hosono
    • Organizer
      IMID
    • Related Report
      2017 Research-status Report
    • Invited
  • [Presentation] Development of Amorphous Gallium Oxide Semiconductor and its Application to Future Electronic Devices2017

    • Author(s)
      Junghwan Kim, Toshio Kamiya, Hideo Hosono
    • Organizer
      IWGO
    • Related Report
      2017 Research-status Report
    • Invited
  • [Presentation] Material Design and Development of New Amorphous Oxide Semiconductors for Future Electronics2017

    • Author(s)
      Junghwan Kim, Toshio Kamiya, Hideo Hosono
    • Organizer
      ICMaSS
    • Related Report
      2017 Research-status Report
    • Invited

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Published: 2017-04-28   Modified: 2020-03-30  

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