Study about the influence of dislocation on devices for practical application of GaN power devices

• Project/Area Number: 17K17808
• Research Category: Grant-in-Aid for Young Scientists (B)
• Allocation Type: Multi-year Fund
• Research Field: Electron device/Electronic equipment; Electronic materials/Electric materials
• Research Institution: Nagoya University
• Principal Investigator: Tanaka Atsushi 名古屋大学, 未来材料・システム研究所, 特任准教授 (30774286)
• Project Period (FY): 2017-04-01 – 2020-03-31
• Project Status: Completed (Fiscal Year 2019)
• Budget Amount: ¥4,290,000 (Direct Cost: ¥3,300,000、Indirect Cost: ¥990,000); Fiscal Year 2019: ¥780,000 (Direct Cost: ¥600,000、Indirect Cost: ¥180,000); Fiscal Year 2018: ¥1,170,000 (Direct Cost: ¥900,000、Indirect Cost: ¥270,000); Fiscal Year 2017: ¥2,340,000 (Direct Cost: ¥1,800,000、Indirect Cost: ¥540,000)
• Keywords: GaN / 窒化ガリウム / パワーデバイス / 転位 / ダイオード / 漏れ電流 / 通電劣化 / 電子デバイス・機器

Outline of Final Research Achievements

We studied how the dislocations in GaN crystals affect the GaN power devices. It was found that a 1c screw dislocation in a pin diode causes leakage current when a reverse voltage is applied. In the process of achieving the above results, we also obtained, how to determine the Burgers vectors of dislocations in GaN with birefringence microscopy, a process for fabricating pin diodes with repeatable avalanche breakdown, and confirmation of the Recombination Enhanced Dislocation Gride by multiphoton excitation carries on basal plane dislocations at epi/sub interface of GaN crystal.

Academic Significance and Societal Importance of the Research Achievements

今後、持続可能な社会を実現していく上で、電力エネルギーに関しては低消費電力化という取り組みが重要になってくる。この低消費電力化においてGaNパワーデバイスは非常に重要な役割を担う事が期待されている。その役割を担うためにはGaN結晶についての深い理解が必要であり、本研究成果はGaN結晶をパワーデバイスに用いる際に知っておくべきことを学術的に明らかにしたものである。

Research Products

• [Journal Article] Demonstration of Observation of Dislocations in GaN by Novel Birefringence Method (2020)
  • Author(s): Tanaka Atsushi、Inotsume Syo、Harada Shunta、Hanada Kenji、Honda Yoshio、Ujihara Toru、Amano Hiroshi
  • Journal Title: physica status solidi (b) Volume: 257 Issue: 4 Pages: 1900553-1900553
  • DOI: 10.1002/pssb.201900553
  • Peer Reviewed
• [Journal Article] Direct evidence of Mg diffusion through threading mixed dislocations in GaN p?n diodes and its effect on reverse leakage current (2019)
  • Author(s): Usami Shigeyoshi、Mayama Norihito、Toda Kazuya、Tanaka Atsushi、Deki Manato、Nitta Shugo、Honda Yoshio、Amano Hiroshi
  • Journal Title: Applied Physics Letters Volume: 114 Issue: 23 Pages: 232105-232105
  • DOI: 10.1063/1.5097767
  • Peer Reviewed
• [Journal Article] V-shaped dislocations in a GaN epitaxial layer on GaN substrate (2019)
  • Author(s): Tanaka Atsushi、Nagamatsu Kentaro、Usami Shigeyoshi、Kushimoto Maki、Deki Manato、Nitta Shugo、Honda Yoshio、Bockowski Michal、Amano Hiroshi
  • Journal Title: AIP Advances Volume: 9 Issue: 9 Pages: 095002-095002
  • DOI: 10.1063/1.5114866
  • NAID: 120006877869
  • Peer Reviewed / Open Access / Int'l Joint Research
• [Journal Article] Vertical GaN p-n diode with deeply etched mesa and the capability of avalanche breakdown (2019)
  • Author(s): Hayata Fukushima, Shigeyoshi Usami, Masaya Ogura, Yuto Ando, Atsushi Tanaka, Manato Deki, Maki Kushimoto, Shugo Nitta, Yoshio Honda, Hiroshi Amano
  • Journal Title: Applied Physics Express Volume: 12 Pages: 2-2
  • NAID: 120006643281
  • Peer Reviewed
• [Journal Article] Correlation between dislocations and leakage current of p-n diodes on a free-standing GaN substrate (2018)
  • Author(s): Shigeyoshi Usami, Yuto Ando, Atsushi Tanaka, Kentaro Nagamatsu, Manato Deki, Maki Kushimoto, Shugo Nitta, Yoshio Honda, Hiroshi Amano, Yoshihiro Sugawara, Yong-Zhao Yao, Yukari Ishikawa
  • Journal Title: Applied Physics Letters Volume: 112 Pages: 182106-182106
  • Peer Reviewed
• [Journal Article] Comparing high-purity c-and m-plane GaN layers for Schottky barrier diodes Grown homoepitaxially by metalorganic vapor phase epitaxy (2018)
  • Author(s): Kentaro Nagamatsu, Yuto Ando, Zheng Ye, Osmane Barry, Atsushi Tanaka, Manato Deki, Shugo Nitta, Yoshio Honda, Markus Pristovsek, Hiroshi Amano
  • Journal Title: Japanese Journal of Applied Physics Volume: 56 Pages: 105501-105501
  • NAID: 210000149720
  • Peer Reviewed
• [Journal Article] m-Plane GaN Schottky Barrier Diodes Fabricated With MOVPE Layer on Several Off-Angle m-Plane GaN Substrates (2018)
  • Author(s): Atsushi Tanaka, yuto Ando, Kentaro Nagamatsu, Manato Deki, Heajeong Cheong, Barry Ousmane, Maki Kushimoto, Shugo Nitta, Yoshio Honda, Hiroshi Amano
  • Journal Title: Physica Status Solidi A Volume: 215 Pages: 1700525-1700525
  • NAID: 120006498158
• [Journal Article] Correlation between dislocations and leakage current of p-n diodes on a free-standing GaN substrate (2018)
  • Author(s): Usami Shigeyoshi、Ando Yuto、Tanaka Atsushi、Nagamatsu Kentaro、Deki Manato、Kushimoto Maki、Nitta Shugo、Honda Yoshio、Amano Hiroshi、Sugawara Yoshihiro、Yao Yong-Zhao、Ishikawa Yukari
  • Journal Title: Applied Physics Letters Volume: 112 Issue: 18 Pages: 182106-182106
  • DOI: 10.1063/1.5024704
  • Peer Reviewed / Open Access
• [Journal Article] Initial leakage current paths in the vertical-type GaN-on-GaN Schottky barrier diodes (2017)
  • Author(s): Sang Liwen、Ren Bing、Sumiya Masatomo、Liao Meiyong、Koide Yasuo、Tanaka Atsushi、Cho Yujin、Harada Yoshitomo、Nabatame Toshihide、Sekiguchi Takashi、Usami Shigeyoshi、Honda Yoshio、Amano Hiroshi
  • Journal Title: Applied Physics Letters Volume: 111 Issue: 12 Pages: 122102-122102
  • DOI: 10.1063/1.4994627
  • Peer Reviewed / Open Access
• [Presentation] GaNパワーデバイスの実用化に向けた準備状況について (2019)
  • Author(s): 田中敦之、安藤悠人、高橋昌大、三浦史也、川崎晟也、渡邉浩崇、久志本真希、出来真斗、新田州吾、本田善央、天野浩
  • Organizer: 第80回応用物理学会秋季学術講演会
  • Invited
• [Presentation] A novel birefringent observation for analyzing dislocations in GaN (2019)
  • Author(s): Atushi Tanaka, Sho Inotsume, Shunta Harada, Kenji Hanada, Yoshio Honda, Toru Ujihara, Hiroshi Amano
  • Organizer: 13th International Conference on Nitride Semiconductors
• [Presentation] Investigation of the Origin of the Leakage of P-N Diodes on a Free-Standing GaN Substrate Using the 3DAP and LACBED Methods (2018)
  • Author(s): Shigeyoshi Usami, Yoshihiro Sugawara, Yong-Zhao Yao, Yukari Ishikawa, Norihito Mayama, Kazuya Toda, Yuto Ando, Atsushi Tanaka, Kentaro Nagamatsu, Manato Deki, Maki Kushimoto, Shugo Nitta, Yoshio Honda, Hiroshi Amano
  • Organizer: The Compound Semiconductor Week 2018
  • Int'l Joint Research
• [Presentation] Ammonia Decomposition and Reaction by High-Resolution Mass Spectrometry for Group III-Nitrides Epitaxial Growth (2018)
  • Author(s): Zheng Ye, Shugo Nitta, Kentaro Nagamatsu, Naoki Fujimoto, Maki Kushimoto, Manato Deki, Atsushi Tanaka, Yoshio Honda, Markus Pristovsek, Hiroshi Amano
  • Organizer: 19th International Conference on Metalorganic Vapor Phase Epitaxy
  • Int'l Joint Research
• [Presentation] Observation of Dislocation Propagation in GaN on GaN Structure with a Multiphoton Excitation Photoluminescence Microscope (2018)
  • Author(s): Atushi Tanaka, Kentaro Nagamatsu, Shigeyoshi Usami, Maki Kushimoto, Manato Deki, Shugo Nitta, Yoshio Honda HIroshi Amano
  • Organizer: Internatinal Symposium on Growth of III-Nitrides ISGN-7
  • Int'l Joint Research / Invited
• [Presentation] Improvement of Electrical Stability of ALD-Al2O3/GaN interface by UV/O3 Oxidation and Postdeposition Annealing (2018)
  • Author(s): Manato Deki, Kazushi Sone, Kenta Watanabe, Fumiya Watanabe, Kentaro Nagamatsu, Atsushi Tanaka, Maki Kushimoto, Shugo Nitta, Yoshio Honda, Hiroshi Amano
  • Organizer: Internatinal Symposium on Growth of III-Nitrides ISGN-7
  • Int'l Joint Research
• [Presentation] Schottky Barrier Diodes Fabricated on Miscut m-plane Substrates (2018)
  • Author(s): Yuto Ando, Kentaro Nagamatsu, Atsushi Tanaka, Manato Deki, Ousmane 1 Barry, Shigeyoshi Usami, Maki Kushimoto, Shugo Nitta, Yoshio Honda, and Hiroshi Amano
  • Organizer: Internatinal Symposium on Growth of III-Nitrides ISGN-7
  • Int'l Joint Research
• [Presentation] Characterizations of high-temperature Mg ion implantation in GaN (2018)
  • Author(s): M. Takahashi, K. Sone, A. Tanaka, S. Usami, M. Deki, M. Kushimoto, K. Nagamatsu, S. Nitta, Y. Honda, and H. Amano,
  • Organizer: Internatinal Symposium on Growth of III-Nitrides ISGN-7
  • Int'l Joint Research
• [Presentation] Vertical GaN pn diode with Avalanche capability structure (2018)
  • Author(s): Hayata Fukushima, Shigeyoshi Usami, Yuto Ando, Atsushi Tanaka, Manato Deki, Maki Kushimoto, Shugo Nitta, Yoshio Honda, and Hiroshi Amano
  • Organizer: International Workshop on Nitride Semiconductors 2018
  • Int'l Joint Research
• [Presentation] Screw dislocations and nanopipe generation in a MOVPE-grown homoepitaxial layer on freestanding GaN substrates and the electrical influence on vertical p－n diodes (2018)
  • Author(s): Shigeyoshi Usami, Atsushi Tanaka, Hayata Fukushima, Yuto Ando, Manato Deki, Maki Kushimoto, Shugo Nitta, Yoshio Honda, Hiroshi Amano
  • Organizer: International Workshop on Nitride Semiconductors 2018
  • Int'l Joint Research
• [Presentation] Dislocation Characterization of GaN epilayer grown for power devices (2018)
  • Author(s): Atsushi Tanaka
  • Organizer: ACALED workshop
  • Int'l Joint Research / Invited
• [Presentation] 多光子PL顕微鏡による窒化ガリウム中転位の三次元観察 (2018)
  • Author(s): 田中敦之，永松謙太郎，久志本真希，出来真斗，新田州吾，本田善央，天野浩
  • Organizer: 第10回ナノ構造・エピタキシャル成長講演会
• [Presentation] GaNデバイスのキラーとなる転位欠陥とその低減法 (2018)
  • Author(s): 田中敦之, 宇佐美茂佳, 福島颯太, 安藤悠人, 久志本真希, 出来真斗, 新田州吾, 本田善央, 天野浩
  • Organizer: 第79回応用物理学会秋季学術講演会
  • Invited
• [Presentation] GaN中転位の三次元観察と転位がデバイスに与える影響 (2018)
  • Author(s): 田中敦之、宇佐美茂佳、安藤悠人、永松謙太郎、久志本真希、出来真斗、新田州吾、本田善央、天野浩
  • Organizer: 第65会 応用物理学会春季学術講演会
  • Invited
• [Presentation] 3DAPおよびLACBED法によるGaN自立基板上pnダイオードのリークの起源調査 (2018)
  • Author(s): 宇佐美茂佳、菅原義弘、姚永昭、石川由加里、間山憲仁、戸田一也、安藤悠人、田中敦之、永松謙太郎、久志本真希、出来真斗、新田州吾、本田善央、天野浩
  • Organizer: 第65会 応用物理学会春季学術講演会
• [Presentation] GaN自立基板上pnダイオード逆方向リーク電流の成長条件依存性 (2018)
  • Author(s): 宇佐美茂佳、福島颯太、安藤悠人、田中敦之、永松謙太郎、久志本真希、出来真斗、新田州吾、本田善央、天野浩
  • Organizer: 第65会 応用物理学会春季学術講演会
• [Presentation] 多光子PLを用いたGaN基板・GaNエピ層中の転位観察 (2017)
  • Author(s): 田中敦之、宇佐美茂佳、安藤悠人、永松謙太郎、新田州吾、本田善央、天野浩
  • Organizer: 日本結晶成長国内会議
  • Invited