Semiconductor Nanowire Electronics by Selective-Area Metal-Organic Vapor Phase Epitaxy

• Project/Area Number: 18002003
• Research Category: Grant-in-Aid for Specially Promoted Research
• Allocation Type: Single-year Grants
• Review Section: Science and Engineering; Mathematics and Physics
• Research Institution: Hokkaido University
• Principal Investigator: FUKUI Takashi Hokkaido University, 大学院・情報科学研究科, 教授 (30240641)
• Co-Investigator(Kenkyū-buntansha): AMEMIYA Yoshihito 北海道大学, 大学院・情報科学研究科, 教授 (80250489) ; MOTOHISA Junichi 北海道大学, 大学院・情報科学研究科, 教授 (60212263) ; KASAI Seiya 北海道大学, 大学院・情報科学研究科, 准教授 (30312383) ; HARA Shinjiro 北海道大学, 量子集積エレクトロニクス研究センター, 准教授 (50374616)
• Project Period (FY): 2006 – 2010
• Project Status: Completed (Fiscal Year 2010)
• Budget Amount: ¥534,430,000 (Direct Cost: ¥411,100,000、Indirect Cost: ¥123,330,000); Fiscal Year 2010: ¥46,020,000 (Direct Cost: ¥35,400,000、Indirect Cost: ¥10,620,000); Fiscal Year 2009: ¥43,810,000 (Direct Cost: ¥33,700,000、Indirect Cost: ¥10,110,000); Fiscal Year 2008: ¥153,140,000 (Direct Cost: ¥117,800,000、Indirect Cost: ¥35,340,000); Fiscal Year 2007: ¥163,930,000 (Direct Cost: ¥126,100,000、Indirect Cost: ¥37,830,000); Fiscal Year 2006: ¥127,530,000 (Direct Cost: ¥98,100,000、Indirect Cost: ¥29,430,000)
• Keywords: ナノワイヤ / 化合物半導体 / 結晶成長 / 1次元物性 / 磁性体

Research Abstract

A selective growth method for semiconductor nanowires by using electron beam lithography and metal organic vapor phase epitaxy has been established. The crystal structure and optical properties of GaAs and InP nanowires grown were characterized by electron microscopy and photoluminescence. Transistors, light emitting diodes and solar cells using heterostructure/p-n junction nanowires were fabricated to investigate the device characteristics, which showed promise for application to future nano-electronics.

Research Products

• [Journal Article] Lattice-mismatched InGaAs nanowires formed on GaAs(111)B by selective-area MOVPE (2011)
  • Author(s): M.Yoshimura, K.Tomioka, K.Hiruma, S.Hara, J.Motohisa, T.Fukui
  • Journal Title: JOURNAL OF CRYSTAL GROWTH Volume: VOL.315 Pages: 148-151
  • Peer Reviewed
• [Journal Article] GaAs/AlGaAs Core Multishell Nanowire-Based Light-Emitting Diodes on Si (2010)
  • Author(s): K.Tomioka, J.Motohisa, S.Hara, K.Hiruma, T.Fukui
  • Journal Title: Nano Letters Vol.10 Pages: 1639-1644
  • Peer Reviewed
• [Journal Article] Vertical Surrounding Gate Transistors using single InAs Nanowires Grown on Si Substrate (2010)
  • Author(s): T.Tanaka, K.Tomioka, S.Hara, J.Motohisa, T.Fukui
  • Journal Title: Applied Physics Express Vol.3
  • NAID: 10027013579
  • Peer Reviewed
• [Journal Article] Growth and characterization of InGaAs nanowires formed on GaAs(111)B by selective-area metal organic vapor phase epitaxy (2010)
  • Author(s): M.Yoshimura, K.Tomioka, K.Hiruma, S.Hara, J.Motohisa, T.Fukui
  • Journal Title: JAPANESE JOURNAL OF APPLIED PHYSICS Volume: VOL.49
  • NAID: 210000068312
  • Peer Reviewed
• [Journal Article] Magnetic sensor devices based on ordered planar arrangements of MnAs nanocluster (2010)
  • Author(s): C.Heiliger, M.Czerner, P.J.Klar, S.Hara
  • Journal Title: IEEE TRANSACTIONS ON MAGNETICS Volume: VOL.46 Pages: 1702-1704
  • Peer Reviewed
• [Journal Article] GaAs/AlGaAs core multishell nanowire-based light-emitting diodes on Si (2010)
  • Author(s): K.Tomioka, J.Motohisa, S.Hara, K.Hiruma, T.Fukui
  • Journal Title: NANO LETTERS Volume: VOL.10 Pages: 1639-1644
  • Peer Reviewed
• [Journal Article] Structural transition in indium phosphide nanowires (2010)
  • Author(s): Y.Kitauchi, Y.Kobayashi, K.Tomioka, S.Hara, K.Hiruma, T.Fukui, J.Motohisa
  • Journal Title: NANO LETTERS Volume: VOL.10 Pages: 1699-1703
  • Peer Reviewed
• [Journal Article] Fabrication and characterization of GaAs quantum well buried in AlGaAs/GaAs heterostructure nanowires (2010)
  • Author(s): A.Hayashida, T.Sato, S.Hara, J.Motohisa, K.Hiruma, T.Fukui
  • Journal Title: JOURNAL OF CRYSTAL GROWTH Volume: VOL.312 Pages: 3592-3598
  • NAID: 120002678122
  • Peer Reviewed
• [Journal Article] Vertical Surrounding Gate Transistors Using Single InAs Nanowires Grown on Si Substrates (2010)
  • Author(s): T.Tanaka, K.Tomioka, S.Hara, J.Motohisa, E.Sano, T.Fukui
  • Journal Title: Applied Physics Express VOL.3
  • NAID: 10027013579
  • Peer Reviewed
• [Journal Article] Analysis of twin defects in GaAs nanowires and tetrahedral and their correlation to GaAs(111)B surface reconstructions in selective-area metal organic vapour-phase epitaxy (2010)
  • Author(s): H.Yoshida, K.Ikejiri, T.Sato, S.Hara, K.Hiruma, J.Motohisa, T.Fukui
  • Journal Title: Journal of Crystal Growth VOL.312 Pages: 51-57
  • Peer Reviewed
• [Journal Article] Compact Reconfigurable Binary-Decision-Diagram Logic Circuit on a GaAs Nanowire Network (2010)
  • Author(s): Y.Shiratori, K.Miura, R.Jia, N.J.Wu, S.Kasai
  • Journal Title: Applied Physics Express VOL.3
  • NAID: 10027013559
  • Peer Reviewed
• [Journal Article] Stochastic resonance in nanodevice parallel systems (2010)
  • Author(s): S.Kasai
  • Journal Title: IEEE proceedings of 2009 International Symposium on Intelligent Signal Processing and Communication Systems Pages: 363-366
  • Peer Reviewed
• [Journal Article] Growth of Core-Shell InP nanowires for Photovoltaic Application by Selective-Area Metal-Organic Vapor-Phase Epitaxy (2009)
  • Author(s): H.Goto, N.Nosaki, K.Tomioka, S.Hara, K.Hiruma, J.Motohisa, T.Fukui
  • Journal Title: Applied Physics Express Vol.2
  • NAID: 10025085293
  • Peer Reviewed
• [Journal Article] Single GaAs/GaAsP Coaxial Core-Shell Nanowire Lasers (2009)
  • Author(s): B.Hua, J.Motohisa, Y.Kobayashi, S.Hara, T.Fukui
  • Journal Title: Nano Letters Vol.9 Pages: 112-116
  • Peer Reviewed
• [Journal Article] Magnetic domain characterization of anisotropic-shaped MnAs nanoclusters position-controlled by selective-area metal-organic vaporphase epitaxy (2009)
  • Author(s): S.Ito, S.Hara, T.Wakatsuki, T.Fukui
  • Journal Title: Applied Physics Letters VOL.94
  • Peer Reviewed
• [Journal Article] Growth direction control of ferromagnetic MnAs grown by selective-area metal-organic vapor phase epitaxy (2009)
  • Author(s): T.Wakatsuki, S.Hara, S.Ito, D.Kawamura, T.Fukui
  • Journal Title: Japanese Journal of Applied Physics VOL.48
  • NAID: 210000066648
  • Peer Reviewed
• [Journal Article] Fabry-Perot microcavity modes observed in the micro-photoluminescence spectra of the single nanowire with InGaAs/GaAs heterostructure (2009)
  • Author(s): L.Yang, J.Motohisa, T.Fukui, L.X.Jia, L.Zhang, M.M.Geng. P.Chen, Y.L.Liu
  • Journal Title: Optics Express VOL.17 Pages: 9337-9346
  • Peer Reviewed
• [Journal Article] One- and two-dimensional spectral diffusions in InP/InAs/InP core-multishell nanowires (2009)
  • Author(s): K.Goto, M.Ikezawa, S.Tomimoto, B.Pal, Y.Masumoto, P.Mohan, J.Motohisa, T.Fukui
  • Journal Title: Japanese Journal of Applied Physics VOL.48
  • NAID: 210000066714
  • Peer Reviewed
• [Journal Article] Enhanced charge storage characteristics of silicon nanocrystals fabricated by electron-beam coevaporation of Si and SiOx(x=1 or 2) (2009)
  • Author(s): C.Chen, R.Jia, W.Li, H.Li, T.Ye, X.Liu, M.Liu, S.Kasai, T.Hashizume, N.Wu
  • Journal Title: Journal of Vacuum Science & Technology B VOL.27 Pages: 2462-2467
  • Peer Reviewed
• [Journal Article] Boolean Logic Gates Utilizing GaAs Three-branch Nanowire Junctions Controlled by Schottky Wrap Gates (2009)
  • Author(s): S.F.B.A.Rahman, D.Nakata, Y.Shiratori, S.Kasai
  • Journal Title: Japanese Journal of Applied Physics VOL.48
  • Peer Reviewed
• [Journal Article] Investigation on Stochastic Resonance in A Quantum Dot and its Summing Network (2009)
  • Author(s): S.Kasai
  • Journal Title: International Journal of Nanotechnology and Molecular Computation VOL.1 Pages: 70-70
  • Peer Reviewed
• [Journal Article] Multi-path Switching Device Utilizing a Multi-terminal Nanowire Junction for MDD-Based Logic Circuit (2009)
  • Author(s): S.Kasai, Y.Shiratori, K.Miura, Nan-Jian Wu
  • Journal Title: IEEE proceeding of 39th International Symposium on Multiple-Valued Logic Pages: 331-336
  • Peer Reviewed
• [Journal Article] Multiple-Valued Logic Gates Using Asymmetric Single-Electron Transistors (2009)
  • Author(s): Wan-Cheng Zhang, Nan-Jian Wu, T.Hashizume, S.Kasai
  • Journal Title: IEEE proceeding of 39th International Symposium on Multiple-Valued Logic Pages: 337-342
  • Peer Reviewed
• [Journal Article] Single GaAs/GaAsP coaxial core-shell nanowaire lasers (2009)
  • Author(s): B. Hua, J. Motohisa, Y. Kobayashi, S. Hara and T. Fukui
  • Journal Title: Nano Letters vol. 9 Pages: 112-116
  • Peer Reviewed
• [Journal Article] Growth of Core-Shell InP Nanowires for Photovoltaic Application by Selective-Area Metal Organic Vapor Phase Epitaxy (2009)
  • Author(s): H. Goto, K. Nozaki, K. Tomioka, S. Hara, K. Hiruma, J. Motohisa and T. Fukui
  • Journal Title: Applied Physics Express vol. 2
  • NAID: 10025085293
  • Peer Reviewed
• [Journal Article] Selective-area growth of vertically aligned GaAs and GaAs/AlGaAs core-shell nanowires on Si(111) substrate (2009)
  • Author(s): K. Tomioka, Y. Kobayashi, J. Motohisa, S. Hara and T. Fukui
  • Journal Title: Nanotechnology 20
  • Peer Reviewed
• [Journal Article] Growth of core-shell InP nanowires for photovoltaic application by selective-area metal-organic vapor-phase epitaxy (2009)
  • Author(s): H. Goto, K. Nozaki, K. Tomioka, S. Hara, K. Hiruma, J. Motohisa and T. Fukui
  • Journal Title: Applied Physics Express 2
  • NAID: 10025085293
  • Peer Reviewed
• [Journal Article] Single GaAs/GaAsP coaxial core-shell nanowire lasers (2009)
  • Author(s): B. Hua, J. Motohisa, Y. Kobayashi, S. Hara, T. Fukui
  • Journal Title: Nano Letters 9 Pages: 112-116
  • Peer Reviewed
• [Journal Article] Transient band-bending in InP/InAs/InP core-multishell nanowires (2009)
  • Author(s): K. Goto, S. Tomimoto, B. Pal, Y. Masumoto, R Mohan, J. Motohisa and T.Fukui
  • Journal Title: Physica Status Solidi C 6 Pages: 205-208
  • Peer Reviewed
• [Journal Article] Control of InAs nanowire growth directions on Si (2008)
  • Author(s): K. Tomioka, J. Motohisa, S. Hara and T. Fukui
  • Journal Title: Nano Letters 8 Pages: 3475-3480
  • Peer Reviewed
• [Journal Article] Microcavity structures in single GaAs nanowires (2008)
  • Author(s): B. Hua, J. Motohisa, S. Hara and T. Fukui
  • Journal Title: Physica Status Solidi C 5 Pages: 2722-2725
  • Peer Reviewed
• [Journal Article] SA-MOVPE of InGaAs nanowires and their compositions studied by micro-PL measurement (2008)
  • Author(s): T. Sato, Y. Kobayashi, J. Motohisa, S. Hara and T. Fukui
  • Journal Title: Journal of Crystal Growth 310 Pages: 5111-5113
  • Peer Reviewed
• [Journal Article] Optics with single nanowires (2008)
  • Author(s): V. Zwiller, N. Akopian, M. van Weert, M. van Kouwen, U. Perinetti, L. Kouwenhoven, R. Algra, J. G. Rivase, E. Bakkers, G. Patriarche, L. Liu, J.-C.Harmand, Y. Kobayashi and J. Motohisa
  • Journal Title: C.R. Physique 9 Pages: 804-815
  • Peer Reviewed
• [Journal Article] Type-II behavior in wurtzite InP/InAs/InP core-multishell nanowires (2008)
  • Author(s): B. Pal, K. Goto, Y. Mosumoto, P. Mohan, J. Motohisa and T. Fukui
  • Journal Title: Applied Physics Letters 93
  • Peer Reviewed
• [Journal Article] Fabrication and excitation-power-density-dependent micro-photoluminescence of hexagonal nanopillars with a single InGaAs/GaAs quantum well (2008)
  • Author(s): L. Yang, J. Motohisa, K. Tomioka, J. Takeda, T. Fukui M.M. Geng, L.X. Jia, L. Zhang and Y.L. Liu
  • Journal Title: Nanotechnology 19
  • Peer Reviewed
• [Journal Article] Spectroscopy and imaging of GaAs-InGaAs-GaAs heterostructured nanowires grown by selective-area metalorganic vapor phase epitaxy (2008)
  • Author(s): M. Fukui, Y. Kobayashi, J. Motohisa and T. Fukui
  • Journal Title: Physica Status Solidi C 5 Pages: 2743-2745
  • Peer Reviewed
• [Journal Article] Growth characteristics of GaAs nanowires obtained by selective-area metal-organic vapour-phase epitaxy (2008)
  • Author(s): K. Ikejiri, T. Sato, H. Yoshida, K. Hiruma, J. Motohisa, S. Hara and T. Fukui
  • Journal Title: Nanotechnology 19
  • Peer Reviewed
• [Journal Article] Stochastic resonance in Schottky wrap gate-controlled GaAs nanowire field-effect transistors and their networks (2008)
  • Author(s): S. Kasai and T. Asai
  • Journal Title: Applied Physics Express 1
  • NAID: 10025082033
  • Peer Reviewed
• [Journal Article] Fabrication and characterization of active and sequential circuits utilizing Schottky-wrap-gate-controlled GaAs hexagonal nanowire network structures (2008)
  • Author(s): H.-Q. Zhao, T. Nakamura, S. Kasai, T. Hashizume and N.-J. Wu
  • Journal Title: IEICE transactions on Electronics E91-C Pages: 1063-1069
  • NAID: 10026818561
  • Peer Reviewed
• [Journal Article] Study on nonlinear electrical characteristics of GaAs-based three-branch nanowire junctions controlled by Schottky wrap gates (2008)
  • Author(s): S. Kasai, T. Nakamura, S.F. Bin Abd Rahman and Shiratori
  • Journal Title: Japanese journal of applied physics 47 Pages: 4958-4964
  • Peer Reviewed
• [Journal Article] Formation of InP and InGaAs air-hole arrays on InP(111) substrates by selective-area metal-organic vapor-phase epitaxy (2008)
  • Author(s): S. Hashimoto, J. Takeda, A. Tarumi, S. Hara, J. Motohisa and T. Fukui
  • Journal Title: Japanese journal of applied physics 47 Pages: 3354-3358
  • NAID: 210000064731
  • Peer Reviewed
• [Journal Article] Metal-organic vapor phase epitaxial growth condition dependences of MnAs nanocluster formation on GaInAs (111)A surfaces (2008)
  • Author(s): H. Iguchi, S. Hara, J. Motohisa and T. Fukui
  • Journal Title: Japanese journal of applied physics 47 Pages: 3253-3256
  • NAID: 210000064709
  • Peer Reviewed
• [Journal Article] MOVPE選択成長法を用いたIII-V族化合物半導体ナノワイヤの形成 (2008)
  • Author(s): 冨岡克弘、佐藤拓也、原真二郎、本久順一、福井孝志
  • Journal Title: 表面科学 29 Pages: 726-730
  • NAID: 10024407649
  • Peer Reviewed
• [Journal Article] Electrical Characterizations of InGaAs Nanowire-Top-Gate Field-Effect Transistors by Selective-Area Metal Organic Vapor Phase Epitaxy (2007)
  • Author(s): J. Noborisaka, T. Sato, J. Motohisa, S. Hara, K. Tomioka and T. Fukui
  • Journal Title: Japanese Journal of Applied Physics vol. 46 Pages: 7562-7568
  • NAID: 40015705160
  • Peer Reviewed
• [Journal Article] Electrical characteristics of InGaAs nanowire-top-gate field effect transistors by selective-area metal organic vapor phase epitaxy (2007)
  • Author(s): J. Noborisaka, T. Sato, J. Motohisa, S. Hara, K. Tomioka, T. Fukui
  • Journal Title: Japanese journal of applied physics 46 Pages: 7562-7568
  • Peer Reviewed
• [Journal Article] Crystallographic structure of InAs nanowires studied by transmission electron microscopy (2007)
  • Author(s): K. Tomioka, J. Motohisa, S. Hara, T. Fukui
  • Journal Title: Japanese journal of applied physics 46
  • NAID: 210000063794
  • Peer Reviewed
• [Journal Article] Characterization of Fabry-Perot microcavity modes in GaAs nanowires fabricated by selective-area metal organic vapor phase epitaxy (2007)
  • Author(s): B. Hua, J. Motohisa, Y. Ding, S. Hara, T. Fukui
  • Journal Title: Applied physics letters 91
  • Peer Reviewed
• [Journal Article] Aharonov-Bohm oscillations in photoluminescence from charged exciton in quantum tubes (2007)
  • Author(s): K. Tsumura, S. Nomura, P. Mohan, J. Motohisa, T. Fukui
  • Journal Title: Japanese journal of applied physics 46
  • NAID: 120007138780
  • Peer Reviewed
• [Journal Article] Observation of microcavity modes and waveguides in InP nanowires fabricated by selective-area metalorganic vapor-phase epitaxy (2007)
  • Author(s): Y. Ding, J. Motohisa, B. Hua, S. Hara, T. Fukui
  • Journal Title: Nano letters 7 Pages: 3598-3602
  • Peer Reviewed
• [Journal Article] Schottky Wrap Gate Control of Semiconductor Nanowire Networks for Novel Quantum Nanodevice-Integrated Logic Circuits Utilizing BDD Architecture (2007)
  • Author(s): S. Kasai, T. Nakamura, Y. Shiratori, T. Tamura
  • Journal Title: Journal of Computational and Theoretical Nanoscience 4 Pages: 1120-1132
  • Peer Reviewed
• [Journal Article] Self-assembled formation of ferromagnetic MnAs nanoclusters on GalnAs/InP (111) B layers by metal-organic vapor phase epitaxy (2007)
  • Author(s): S.Hara, T.Fukui
  • Journal Title: JOURNAL OF CRYSTAL GROWTH 298 Pages: 612-615
• [Journal Article] Mechanism of catalyst-free growth of GaAs nanowires by selective area MOVPE (2007)
  • Author(s): K.Ikejiri, T.Fukui
  • Journal Title: JOURNAL OF CRYSTAL GROWTH 298 Pages: 616-619
• [Journal Article] Growth of highly uniform InAs nanowire arrays by selective-area MOVPE (2007)
  • Author(s): K.Tomioka, T.Fukui
  • Journal Title: JOURNAL OF CRYSTAL GROWTH 298 Pages: 644-647
• [Journal Article] Photonic crystal slabs with hexagonal air holes fabricated by selective area metal organic vapor phase epitaxy (2007)
  • Author(s): L.Yang, T.Fukui
  • Journal Title: SENSORS AND ACTUATORS A-PHYSICAL 133 (2) Pages: 288-293
• [Journal Article] Size-dependent photoluminescence of hexagonal nanopillars with single InGaAs/GaAs quantum wells fabricated by selective-area metal organic vapor phase epitaxy (2006)
  • Author(s): L.Yang, T.Fukui
  • Journal Title: APPLIED PHYSICS LETTERS 89 (20) Pages: 203110-203110
• [Journal Article] Hexagonal ferromagnetic MnAs nanocluster formation on GaInAs/InP (111)B layers by metal-organic vapor phase epitaxy (2006)
  • Author(s): S.Hara, T.Fukui
  • Journal Title: APPLIED PHYSICS LETTERS 89 (11) Pages: 113111-113111
• [Presentation] GaAs and related III-V nanowires formed by using selective-area metal-organic vapor-phase epitaxy and their applications to optoelectronics (2011)
  • Author(s): K.Hiruma, S.Fujisawa, K.Ikejiri, K.Tomioka, S.Hara, J.Motohisa, T.Fukui
  • Organizer: 473rd Wilhelm and Else Heraeus Seminar on III-V Nanowires : Growth, Properties, and Applications
  • Place of Presentation: Physikzentrum, Bad Honnef, Germany(招待講演)
• [Presentation] III-V semiconductor nanowire formation using catalyst-free MOVPE and applications to optoelectronic devices (2010)
  • Author(s): K.Hiruma, K.Tomioka, S.Hara, J.Motohisa, T.Fukui
  • Organizer: The 12th Nanowire Research Society Meeting & Nano Korea 2010 Satellite Session
  • Place of Presentation: KINTEX, Goyang, Korea(招待講演)
  • Year and Date: 2010-08-20
• [Presentation] III-V semiconductor core-shell nanowires grown by selective-area MOVPE and their device applications (2010)
  • Author(s): T.Fukui, K.Tomioka, S.Hara, K.Hiruma, J.Motohisa
  • Organizer: Material Research Society 2010 Spring Meeting
  • Place of Presentation: San Francisco, USA
• [Presentation] Growth mechanism of III-V semiconductor nanowires in selectve-area metalorganic vapor phase epitaxy (2010)
  • Author(s): J.Motohisa, K.Tomioka, S.Hara, K.Hiruma, T.Fukui
  • Organizer: International Conference on Crystal Growth/International Conference on Vapor Growth and Epitaxy
  • Place of Presentation: Beijing, China
• [Presentation] III-V semiconductor core-shell nanowires grown by selective area MOVPE and their device applications (2010)
  • Author(s): T.Fukui, K.Tomioka, S.Hara, K.Hiruma, J.Motohisa
  • Organizer: Material Research Society (MRS) 2010 Spring Meeting
  • Place of Presentation: Moscone West and Marriott Hotel, San Francisco, USA(招待講演)
• [Presentation] Growth and characterization of core-multishell GaAs nanowire array solar cell (2010)
  • Author(s): S.Soundeswaran, K.Tomioka, T.Sato, M.Yoshimura, T.Sato, J.Motohisa, K.Hiruma, T.Fukui
  • Organizer: International Conference on Nanomaterials
  • Place of Presentation: Mahatma Gandhi University, Kottayam, Kerala, India
• [Presentation] III-V Semiconductor Nanowires-from Crystal Growth to Device Applications (2010)
  • Author(s): T.Fukui, K.Tomioka, S.Hara, K.Hiruma, J.Motohisa
  • Organizer: International Conference on Metal Organic Vapor Phase Epitaxy (ICMOVPE XV)
  • Place of Presentation: Hyatt Regency, Lake Tahoe, USA(招待講演)
• [Presentation] Heteroepitaxial growth of InGaAs Nanowires formed on GaAs(111)B by Selective-Area MOVPE (2010)
  • Author(s): M.Yoshimura, K.Tomioka, K.Hiruma, S.Hara, J.Motohisa, T.Fukui
  • Organizer: International Conference on Metal Organic Vapor Phase Epitaxy (ICMOVPE XV)
  • Place of Presentation: Hyatt Regency, Lake Tahoe, USA
• [Presentation] Selective-area growth of InGaAs nanowires on Si (2010)
  • Author(s): K.Tomioka, M.Yoshimura, J.Motohisa, S.Hara, K.Hiruma, T.Fukui
  • Organizer: International Conference on Metal Organic Vapor Phase Epitaxy (ICMOVPE XV)
  • Place of Presentation: Hyatt Regency, Lake Tahoe, USA
• [Presentation] Fabrication and characterization of InAs tubular channel FETs using core-shell nanowires grown by SA-MOVPE (2010)
  • Author(s): T.Sato, J.Motohisa, E.Sano, S.Hara, T.Fukui
  • Organizer: International Conference on Metal Organic Vapor Phase Epitaxy (ICMOVPE XV)
  • Place of Presentation: Hyatt Regency, Lake Tahoe, USA
• [Presentation] Fabrication of III-V Semiconductor Nanowires by SA-MOVPE and their Applications to Photonic and Photovoltaic Devices (2010)
  • Author(s): T.Fukui, K.Tomioka, S.Hara, K.Hiruma, J.Motohisa
  • Organizer: International Conference on InP and Related Materials/International Conference on Compound Semiconductors
  • Place of Presentation: Takamatsu Symbol Tower, Takamatsu, Japan(招待講演)
• [Presentation] Selective-area MOVPE growth and optical properties of single InAsP quantum dots embedded in InP NWs (2010)
  • Author(s): Y.Kobayashi, J.Motohisa, K.Tomioka, S.Hara, K.Hiruma, T.Fukui
  • Organizer: International Conference on InP and Related Materials/International Conference on Compound Semiconductors
  • Place of Presentation: Takamatsu Symbol Tower, Takamatsu, Japan
• [Presentation] Fabrication of GaAs/InAs axial nanowires on Si by selective-area MOVPE with re-growth method (2010)
  • Author(s): K.Tomioka, J.Motohisa, S.Hara, K.Hiruma, T.Fukui
  • Organizer: International Conference on InP and Related Materials/International Conference on Compound Semiconductors
  • Place of Presentation: Takamatsu Symbol Tower, Takamatsu, Japan
• [Presentation] III-V semiconductor nanowires and core-shell nanowires and their device applications (2010)
  • Author(s): T.Fukui, K.Tomioka, S.Hara, K.Hiruma, J.Motohisa
  • Organizer: International Conference on Superlattices, Nanostructures and Nanodevices
  • Place of Presentation: Beijing International Convention Center, Beijing, China(招待講演)
• [Presentation] Fabrication of GaAs/AlGaAs core-multishell nanowire-based light-emitting-diode array on Si substrate (2010)
  • Author(s): K.Tomioka, S.Hara, K.Hiruma, J.Motohisa, T.Fukui
  • Organizer: SPIE Infrared Remote Sensing and Instrumentation XVIII
  • Place of Presentation: San Diego Convention Center, San Diego, USA(招待講演)
• [Presentation] Growth mechanism of III-V semiconductor nanowires in selective-area metalorganic vapor phase epitaxy (2010)
  • Author(s): J.Motohisa, K.Tomioka, S.Hara, K.Hiruma, T.Fukui
  • Organizer: International Conference on Crystal Growth/International Conference on Vapor Growth and Epitaxy
  • Place of Presentation: Beijing International Convention Center, Beijing, China(招待講演)
• [Presentation] Free-Standing GaAs/AlGaAs Heterostructure Nanowires with a GaAs Quantum Well Formed by Selective-Area Metal Organic Vapor-Phase Epitaxy (2010)
  • Author(s): K.Hiruma, A.Hayashida, T.Sato, S.Hara, J.Motohisa, T.Fukui
  • Organizer: International Conference on Crystal Growth/International Conference on Vapor Growth and Epitaxy
  • Place of Presentation: Beijing International Convention Center, Beijing, China
• [Presentation] Growth of GaN nanorods on Si(111) by rf-assisted molecular beam epitaxy (2010)
  • Author(s): N.Isomura, T.Hashizume, J.Motohisa
  • Organizer: 16th International Conference on Molecular Beam Epitaxy (MBE2010)
  • Place of Presentation: Humboldt-Universitat zu Berlin, Berlin, Germany
• [Presentation] Growth and Characterization of GaAsP Nanowires on GaAs(111)B Substrate by Selective-Area Metal Organic Vapor Phase Epitaxy (2010)
  • Author(s): S.Fujisawa, T.Sato, S.Hara, J.Motohisa, K.Hiruma, T.Fukui
  • Organizer: International Conference on Solid State Devices and Materials (SSDM 2010)
  • Place of Presentation: University of Tokyo, Tokyo, Japan
• [Presentation] Electrical characterization of InGaAs nanowire MISFETs fabricated by dielectric-first process (2010)
  • Author(s): Y.Kohashi, T.Sato, K.Tomioka, S.Hara, T.Fukui, J.Motohisa
  • Organizer: International Conference on Solid State Devices and Materials (SSDM 2010)
  • Place of Presentation: University of Tokyo, Tokyo, Japan
• [Presentation] GaAs/AlGaAs heterostructure nanowires with a GaAs quantum well formed by selective-area metal organic vapor-phase epitaxy (2010)
  • Author(s): K.Hiruma, A.Hayashida, T.Sato, S.Hara, J.Motohisa, T.Fukui
  • Organizer: 5th Nanowire Growth Workshop 2010
  • Place of Presentation: CNR Building, Rome, Italy
• [Presentation] Ferromagnetic MnAs nanocluster composites position controlled on GaAs(111)B substrates toward lateral magneto-resistive devices (2010)
  • Author(s): K.Komagata, S.Hara, S.Ito, T.Fukui
  • Organizer: The 23rd International Microprocesses and Nanotechnology Conference (MNC 2010)
  • Place of Presentation: Rihga Royal Hotel Kokura, Fukuoka, Japan
• [Presentation] Selective-area growth of InGaAs nanowires on Si(111) substrate (2010)
  • Author(s): K.Tomioka, M.Yoshimura, J.Motohisa, S.Hara, K.Hiruma, T.Fukui
  • Organizer: Material Research Society (MRS) 2010 Fall Meeting
  • Place of Presentation: Hynes Convention Center and Sheraton Hotel, Boston, USA
• [Presentation] Integration of III-V NW-based vertical FETs on Si and device concept for tunnel FET using III-V/Si heterojunctions (2010)
  • Author(s): K.Tomioka, J.Motohisa, S.Hara, K.Hiruma, T.Tanaka, T.Fukui
  • Organizer: Material Research Society (MRS) 2010 Fall Meeting
  • Place of Presentation: Hynes Convention Center and Sheraton Hotel, Boston, USA
• [Presentation] Selective-area growth and characterization of MnAs nanocluster composites for lateral magneto-resistive device applications (2010)
  • Author(s): K.Komagata, S.Hara, S.Ito, T.Fukui
  • Organizer: Material Research Society (MRS) 2010 Fall Meeting
  • Place of Presentation: Hynes Convention Center and Sheraton Hotel, Boston, USA
• [Presentation] Fabrication of III-V semiconductor core-shell nanowires by SA-MOVPE and their device applications (2010)
  • Author(s): T.Fukui, K.Tomioka, S.Hara, K.Hiruma, J.Motohisa
  • Organizer: 2010 Conference on Optoelectronic and Microelectronic Materials and Devices
  • Place of Presentation: The Australian National University, Canberra, Australia(招待講演)
• [Presentation] Catalyst-Free and Position-Controlled Formation of III-V Semiconductor Nanowires for Optical Device applications(Invited) (2010)
  • Author(s): S.Hara, J.Motohisa, K.Tomioka, K.Hiruma, T.Fukui
  • Organizer: SPIE Photonics West
  • Place of Presentation: San Francisco, USA
• [Presentation] Lasing in GaAs-based Nanowires Grown by Selective-Area MOVPE(Invited) (2010)
  • Author(s): J.Motohisa, B.Hua, K.S.K.Varadwaj, S.Hara, K.Hiruma, T.Fukui
  • Organizer: IEEE photonics society winter topical 2010
  • Place of Presentation: Majorca, Spain
• [Presentation] Multiple-valued Logic Gates using Asymmetric Single-electron Transistors (2009)
  • Author(s): W.-C.Zhang, N.-J.Wu, S.Kasai, T.Hashizume
  • Organizer: 39th International Symposium on Multiple-Valued Logic
  • Place of Presentation: Naha, Japan
  • Year and Date: 2009-05-21
• [Presentation] Multi-path switching device utilizing a multi-teminal nanowire junction for MDD-based logic circuit (2009)
  • Author(s): S.Kasai, Y.Shiratori, K.Miura, N.-J.Wu
  • Organizer: 39th International Symposium on Multiple-Valued Logic
  • Place of Presentation: Naha, Japan
  • Year and Date: 2009-05-21
• [Presentation] Growth of nanowires by selective-area metalorganic vapor phase epitaxy and their applications(Invited) (2009)
  • Author(s): J.Motohisa, S.Hara, K.Hiruma, T.Fukui
  • Organizer: The XV International Workshop on the Physics of Semiconductor Devices
  • Place of Presentation: New Delhi, India
• [Presentation] Highly Polarized Lasing Emission in Single GaAs/AlGaAs/GaAs core-shell Nanowires (2009)
  • Author(s): S.K.Vazadwaj, J.Motohisa, S.Soundeswaran, T.Sato, B.Hua, M.van Kouwen, V.Zwiller, S.Haza, T.Fukui
  • Organizer: The 3rd International Conference on One-dimensional Nanomaterials
  • Place of Presentation: Atlanta, U.S.A.
• [Presentation] Selective-area growth of vertically aligned GaAs and GaAs/AlGaAs core-shell nanowires on Si(111)substrate (2009)
  • Author(s): K.Tomioka, T.Tanaka, J.Motohisa, S.Hara, K.Hiruma, T.Fukui
  • Organizer: The 3rd International Conference on One-dimensional Nanomaterials
  • Place of Presentation: Atlanta, U.S.A.
• [Presentation] Fabrication and electrical characterization of InAs tubular channel nanowire FETs (2009)
  • Author(s): T.Sato, J.Motohisa, S.Hara, E.Sano, T.Fukui
  • Organizer: International Symposium on Advanced Nanostructures and Nano-Devices
  • Place of Presentation: Hawaii, USA
• [Presentation] Fabrication of GaAs/AlGaAs Core-Multishell Nanowire-based Light-Emitting Diode Arrays on Si (2009)
  • Author(s): K.Tomioka, T.Tanaka, J.Motohisa, S.Hara, K.Hiruma, T.Fukui
  • Organizer: The 2009 Material Research Society(MRS)Fall Meeting
  • Place of Presentation: Boston, USA
• [Presentation] Vertical Surrounding Gate Field Effect Transistors using InAs Nanowires grown on Si substrates (2009)
  • Author(s): T.Tanaka, K.Tomioka, S.Hara, J.Motohisa, T.Fukui
  • Organizer: The 2009 Material Research Society(MRS)Fall Meeting
  • Place of Presentation: Boston, USA
• [Presentation] Stochastic Resonance in Nanodevice Parallel Systems (2009)
  • Author(s): S.Kasai
  • Organizer: 2009 International Symposium on Intelligent Signal Processing and Communication Systems(ISPACS 2009)
  • Place of Presentation: Kanazawa, Japan
• [Presentation] Functional Electron Nanodevices and Their Integrated Circuits on Semiconductor Nanowire Networks(Invited) (2009)
  • Author(s): S.Kasai
  • Organizer: ESciNano Annual Symposium 2009
  • Place of Presentation: Johor Bahru, Malaysia
• [Presentation] Logic Gates Utilizing Schottky Gate-Controlled Three-Branch GaAs Nanowire Junctions (2009)
  • Author(s): S.F.A.Rahman, D.Nakata, Y.Shiratori, S.Kasai
  • Organizer: ESciNano Annual Symposium 2009
  • Place of Presentation: Johor Bahru, Malaysia
• [Presentation] III-V semiconductor nanowires : From growth to device applications(Invited) (2009)
  • Author(s): T.Fukui, K.Tomioka, S.Hara, K.Hiruma, J.Motohisa
  • Organizer: International Microprocesses and Nanoteclmology Conference(MNC2009)
  • Place of Presentation: Sapporo, Japan
• [Presentation] Analysis on Voltage-Transfer Characteristics In GaAs-Based Three-Branch Nanowire Junctions controlled by Schottky Wrap Gates (2009)
  • Author(s): D.Nakata, H.Shibata, Y.Shiratori, S.Kasai
  • Organizer: International Microprocesses and Nanotechnology Conference(MNC2009)
  • Place of Presentation: Sapporo, Japan
• [Presentation] Fabrication of GaAs/AlGaAs Core-Multishell Nanowire-based Light-Emitting Diode Arrays on Si (2009)
  • Author(s): K.Tomioka, T.Tanaka, J.Motohisa, S.Hara, K.Hiruma, T.Fukui
  • Organizer: International Microprocesses and Nanotechnology Conference(MNC2009)
  • Place of Presentation: Sapporo, Japan
• [Presentation] Structural Characterizations of Ferromagnetic MnAs Nanoclusters on Si(111)Substrate by Selective-Area MOVPE (2009)
  • Author(s): K.Morita, S.Hara, S.Ito, T.Fukui
  • Organizer: International Microprocesses and Nanotechnology Conference(MNC2009)
  • Place of Presentation: Sapporo, Japan
• [Presentation] Growth of tubular InAs nanowires for FET applications (2009)
  • Author(s): T.Sato, J.Motohisa, S.Haza, E.Sano, K.Hiruma, T.Fukui
  • Organizer: 4th Nanowire Growth Workshop
  • Place of Presentation: Paris, France
• [Presentation] Fabrication of a GaAs quantum well embedded in AlGaAs/GaAs hetero-structure nanowires by selective-area MOVPE (2009)
  • Author(s): A.Hayashida, T.Sato, S.Hara, J.Motohisa, K.Hiruma, T.Fukui
  • Organizer: 4th Nanowire Growth Workshop
  • Place of Presentation: Paris, France
• [Presentation] Analysis of twin development during selective growth of GaAs nanowires by using catalyst-free metal organic vapor-phase epitaxy (2009)
  • Author(s): K.Hiruma, H.Yoshida, K.Ikejiri, T.Sato, S.Hara, J.Motohisa, T.Fukui
  • Organizer: 4th Nanowire Growth Workshop
  • Place of Presentation: Paris, France
• [Presentation] InAs Nanowire Vertical Surrounding Gate FET on Si Substrate (2009)
  • Author(s): T.Tanaka, K.Tomioka, S.Hara, J.Motohisa, T.Fukui
  • Organizer: 2009 International Conference on Solid State Devices and Materials(SSDM2009)
  • Place of Presentation: Sendai, Japan
• [Presentation] Growth and Characterization of InGaAs Nanowires formed on GaAs(111)B by Selecrive-Area MOVPE (2009)
  • Author(s): M.Yoshimura, K.Tomioka, K.Hiruma, S.Hara, J.Motohisa, T.Fukui
  • Organizer: 2009 International Conference on Solid State Devices and Materials(SSDM2009)
  • Place of Presentation: Sendai, Japan
• [Presentation] Design and Fabrication of BDD-based Reconfigurable Logic Circuit on GaAs Nanowire Network (2009)
  • Author(s): Y.Shiratori, K.Miura, S.Kasai
  • Organizer: 2009 International Conference on Solid State Devices and Materials(SSDM2009)
  • Place of Presentation: Sendai, Japan
• [Presentation] Growth and Application of Semiconductor Nanowires(Invited) (2009)
  • Author(s): J.Motohisa
  • Organizer: International Conference on Nanoscience and Technology, China 2009(ChinaNANO 2009)
  • Place of Presentation: Beijing, China
• [Presentation] BDD-based Reconfigurable Logic Circuit on Nanowire Network (2009)
  • Author(s): S.Kasai, Y.Shiratori, K.Miura
  • Organizer: 8th Topical Workshop on Heterostructure Microelectronics(TWHM2009)
  • Place of Presentation: Nagano, Japan
• [Presentation] Selective-Area Growth of Self-Assembled Ferromagnetic MnAs Nanoclusters and Cluster Chains for Novel Planar Magnetoelectronic Devices(Invited) (2009)
  • Author(s): M.T.Elm, S.Ito, J.Stehr, H.-A.Krug von Nidda, D.M.Hofmann, S.Hara, P.J.Klar
  • Organizer: The 2009 International Conference on Nanomaterials and Nanosystems(NanoMats 2009)
  • Place of Presentation: Istanbul, Turkey
• [Presentation] Stochastic Resonance Nanodevices for Fluctuation-Robust Electronic Systems(Invited) (2009)
  • Author(s): S.Kasai
  • Organizer: The Seventeenth Annual International Conference on Composites/Nano Engineering(ICCE-17)
  • Place of Presentation: Hawaii, USA
• [Presentation] Growth of III-V nanowires by selecdve-area MOVPE and their applications(Invited) (2009)
  • Author(s): J.Motohisa
  • Organizer: 2nd International Workshop on Epitaxial Growth and Fundamental Properties of Semiconductor Nanostructures(SemiconNano 2009)
  • Place of Presentation: Anan, Tokushima, Japan
• [Presentation] Near-infrared lasing in GaAs/GaAsP coaxial core-shell nanowires(Invited) (2009)
  • Author(s): J.Motohisa, B.Hua, Y.Kobayashi
  • Organizer: International Workshop on Photons and Spins in Nanostructures(IWPSN)
  • Place of Presentation: Sapporo, Japan
• [Presentation] Magnetic Anisotropy in Position-Controllable MnAs Nanoclusters on Semiconductor Substrates by Selective-Area Metal-Orgmic Vapor Phase Epitaxy (2009)
  • Author(s): S.Hara, S.Ito, T.Wakatsuki, T.Fukui
  • Organizer: The 18th International Conference on Magnetism(ICM2009)
  • Place of Presentation: Karlsruhe, Germany
• [Presentation] III-V Semiconductor Nanowires Grown and Their Device Applications(Invited) (2009)
  • Author(s): T.Fukui, K.Tomioka, S.Hara, K.Hiruma, J.Motohisa
  • Organizer: The 13th European Workshop on Metal-Organic Vapour Phase Epitaxy(EWMOVPE-XIII)
  • Place of Presentation: Ulm, Germany
• [Presentation] Selective-Area Metal-Organic Vapour Phase Epitaxy of Anisotropic-Shaped Ferromagnetic MnAs Nanoclusters for Magneto-Resistive Device Applications (2009)
  • Author(s): S.Hara, S.Ito, T.Wakatsuki, T.Fukui
  • Organizer: The 13th European Workshop on Metal-Organic Vapour Phase Epitaxy(EWMOVPE-XIII)
  • Place of Presentation: Ulm, Germany
• [Presentation] Heterepitaxy of III-V nanowires on Si and optical application (2009)
  • Author(s): K.Tomioka, J.Motohisa, S.Hara, K.Hiruma, T.Fukui
  • Organizer: Intemational Workshop on Photons and Spins in Nanostructures(IWPSN)
  • Place of Presentation: Sapporo, Japan
• [Presentation] Structural transition of InP nanowires in selective-area metalorganic vapor phase epitaxy (2009)
  • Author(s): Y.Kitauchi, K.Tomioka, Y.Kobayashi, S.Hara, T.Fukui, J.Motohisa
  • Organizer: the 14th International Conference on Modulated Semiconductor Structures(MSS-14)
  • Place of Presentation: Kobe, Japan
• [Presentation] Stochastic Resonance in GaAs-based Nanowire Field-Effect Transistors and Their Summing Network (2009)
  • Author(s): S.Kasai, T.Asai, Y.Shiratori, D.Nakata
  • Organizer: 2009 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices(AWAD2009)
  • Place of Presentation: Busan, Korea
• [Presentation] Structural Transition of InP Nanowires Grown by Selective-Area Metalorganic Vapor Phase Epitaxy (2009)
  • Author(s): Y.Kitauchi, J.Motohisa, K.Tomioka, Y.Kobayashi, T.Fukui
  • Organizer: The 2009 Material Research Society(MRS)Spring Meeting
  • Place of Presentation: San Francisco, USA
• [Presentation] Fabrication of Axial Heterostructures in III-V Nanowires by Selective-area MOVPE with Regrowth Method (2009)
  • Author(s): K.Tomioka, Y.Kobayashi, J.Motohisa, S.Hara, T.Fukui
  • Organizer: The 2009 Material Research Society(MRS)Spring Meeting
  • Place of Presentation: San Francisco, USA
• [Presentation] Growth of p/n-doped GaAs-AlGaAs Core-multi-shell Nanowire Array on Si(111)by Selective-area MOVPE (2009)
  • Author(s): K.Tomioka, Y.Kobayashi, T.Tanaka, J.Motohisa, S.Hara, K.Hiruma, T.Fukui
  • Organizer: The 2009 Material Research Society(MRS)Spring Meeting
  • Place of Presentation: San Francisco, USA
• [Presentation] Position Controlled Growth of III-V Semiconductor Core-shell Nanowires Grown by Selective Area MOVPE and Their Device Applications(Invited) (2009)
  • Author(s): T.Fukui, K.Tomioka, S.Hara, K.Hiruma, J.Motohisa
  • Organizer: The 2009 Material Reseach Society(MRS)Spring Meeting
  • Place of Presentation: San Francisco, USA
• [Presentation] Position controlled growth and optical properties of III-V semiconductor core-shell nanowires grown by selective-area MOVPE and their device applications (2009)
  • Author(s): J. Motohisa, K. Tomioka, S. Hara, K. Hiruma and T. Fukui
  • Organizer: The SPIE Photonics West Conferences 2009
  • Place of Presentation: San Jose, California, USA
• [Presentation] Analysis of the twin defects occurring in GaAs nanowires grown by selective-area metal-organic Vapor phase epitaxy (2009)
  • Author(s): H. Yoshida, T. Sato, S. Hara, K. Hiruma, J. Motohisa and T. Fukui
  • Organizer: The 5th International Symposium on Surface Science and Nanotechnology
  • Place of Presentation: Tokyo, Japan
• [Presentation] Design and implementation of functional nanodevices and integrated circuits on gate controlled GaAs nanowires and their networks (2008)
  • Author(s): S. Kasai, H.-Q. Zhao, Y. Shiratori, A.R. Saharin and D. Nakata
  • Organizer: NSFC-JSPS Joint Research Project Symposium on "Novel-Function Nano-Integrated Circuits Based on Semiconductor low Dimensional Structures"
  • Place of Presentation: Beijig, China
  • Year and Date: 2008-11-27
• [Presentation] Growth of III-V Semiconductor Nanowires (2008)
  • Author(s): T. Fukui, S. Hara and J. Motohisa
  • Organizer: The 29th International Conference on the Physics of Semiconductors
  • Place of Presentation: Rio de Janeiro, Brazil
• [Presentation] Near-Infrared lasers in GaAs/GaAsP coaxial core-shell nanowires (2008)
  • Author(s): B. Hua, J. Motohisa, S. Hara and T. Fukui
  • Organizer: 2008 MRS Fall Meeting
  • Place of Presentation: Boston, USA
• [Presentation] Growth mechanism of GaAs nanowires using catalyst-free selective-area metal-organic vapor phase epitaxy (2008)
  • Author(s): K. Hiruma, T. Sato, H. Yoshida, S. Hara, J. Motohisa and T. Fukui
  • Organizer: 2008 MRS Fall Meeting
  • Place of Presentation: Boston, USA
• [Presentation] Vertical III-V nanowire growth on Si substrate by selective-area MOVPE (2008)
  • Author(s): K. Tomioka, Y. Kobayashi, J. Motohisa, S. Hara and T. Fukui
  • Organizer: 2008 MRS Fall Meeting
  • Place of Presentation: Boston, USA
• [Presentation] Magnetic domain characterization of MnAs nanoclusters on GaAs(111)B surfaces by selective-area MOVPE (2008)
  • Author(s): S. Ito, S. Hara, T. Wakatsuki and T. Fukui
  • Organizer: The 21 st International Microprocesses and Nanotechnology Conference
  • Place of Presentation: Fukuoka, Japan
• [Presentation] Realization of Boolian logic gates based on GaAs three-barnch nanowire junctions controlled by Schottky wrap gates (2008)
  • Author(s): A. R.Shaharin Fadzli, D. Nakata, Y. Shiratori and S. Kasai
  • Organizer: The 21 st International Microprocesses and Nanotechnology Conference
  • Place of Presentation: Fukuoka, Japan
• [Presentation] Growth direction control and magnetic characterizations of MnAs grown by selective-area metal-organic vapor phase epitaxy (2008)
  • Author(s): T. Wakatsuki, S. Hara, S. Ito and T. Fukui
  • Organizer: The 2008 International Conference on Solid State Devices and Materials
  • Place of Presentation: Tsukuba, Japan
• [Presentation] Competitive growth process of tetrahedrons and hexagons during nanowire formation by metal-organic vapor phase epitaxy (2008)
  • Author(s): K. Hiruma, K. Ikejiri, T. Sato, H. Yoshida, S. Hara, J. Motohisa and T. Fukui
  • Organizer: The third International Workshop on Nanowire Growth Mechanisms
  • Place of Presentation: Duisburg, Germany
• [Presentation] Endotaxial nanoclustering of MnAs in lattice-mismatched semiconductor layers during metal-organic vapor phase epitaxy (2008)
  • Author(s): S. Hara, H. Iguchi and T. Fukui
  • Organizer: The 2008 International Conference on Electronic Materials
  • Place of Presentation: Sydney, Australia
• [Presentation] Growth of III-V semiconductor nanowires (2008)
  • Author(s): T. Fukui, S. Hara and J. Motohisa
  • Organizer: The 29th International Conference on the Physics of Semiconductors
  • Place of Presentation: Rio de Janeiro, Brazil
• [Presentation] III-V semiconductor epitaxial nanowires and their applications (2008)
  • Author(s): T. Fukui, S. Hara, K. Hiruma and J. Motohisa
  • Organizer: The 16 th Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices
  • Place of Presentation: Sapporo, Japan
• [Presentation] 2-bit arithmetic logic unit utilizing hexagonal BDD architecture for implementation of nanoprocessor on GaAs nanowire network (2008)
  • Author(s): H. -Q. Zhao, S. Kasai and T. Hashizume
  • Organizer: The 16 th Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices
  • Place of Presentation: Sapporo, Japan
• [Presentation] Selective-area growth of InGaAs nanowires and their photoluminescence characterization (2008)
  • Author(s): T. Sato, Y. Kobayashi, J. Motohisa and T. Fukui
  • Organizer: The 27 th Electronic Materials Symposium
  • Place of Presentation: Izu, Japan
• [Presentation] Catalyst-free growth and FET application of (InGa)As nanowires (2008)
  • Author(s): J. Noborisaka, T. Sato, J. Motohisa, K. Tomioka, S. Hara and T. Fukui
  • Organizer: The 66th Device Research Conference
  • Place of Presentation: Santa Barbara, California, USA
• [Presentation] Structural and magnetic characterizations of Ferromagnetic MnAs/GaAs nanoclusters formed by selective-area MOVPE (2008)
  • Author(s): S. Hara, T. Wakatsuki, S. Ito, D. Kawamura and T. Fukui
  • Organizer: The 14th International Conference on Metal-organic Vapor Phase Epitaxy
  • Place of Presentation: Metz, France
• [Presentation] Position-controlled growth of GaAs nanowires on Si(111) by selective-area metal-organic vapor phase epitaxy (2008)
  • Author(s): K. Tomioka, Y. Kobayashi, J. Motohisa, S. Hara and T. Fukui
  • Organizer: The 14th International Conference on Metal-Organic Vapor Phase Epitaxy
  • Place of Presentation: Metz, France
• [Presentation] Fabrication and optical characterization of InGaAs nanowires by selective-area MOVPE (2008)
  • Author(s): T. Sato, Y. Kobayashi, J. Motohisa, S. Hara and T. Fukui
  • Organizer: The 14th International Conference on Metal-Organic Vapor Phase Epitaxy
  • Place of Presentation: Metz, France
• [Presentation] Selective-area MOVPE of InP/InGaAs air-hole arrays on InP for photonic crystal applications (2008)
  • Author(s): J. Motohisa, S. Hashimoto, J. Takeda, A. Tarumi, S. Hara and T. Fukui
  • Organizer: The 14th International Conference on Metal-Organic Vapor Phase Epitaxy
  • Place of Presentation: Metz, France
• [Presentation] Epitaxial III-V semiconductors : nanowires and nanotubes (2008)
  • Author(s): T. Fukui, S. Hara and J. Motohisa
  • Organizer: The 4th Asian Confrence on Crystal Growth and Crystal Technology
  • Place of Presentation: Sendai, Japan
• [Presentation] Growth and Optical Properties of InP/InAs Multi-Core Shell Nanowires Grown by Selective-Area MOVPE (2008)
  • Author(s): T. Fukui, S. Hara, J. Motohisa
  • Organizer: 2008 Material Research Society(MRS)Spring Meeting
  • Place of Presentation: San Francisco,USA
• [Presentation] III-V Semiconductor Nanowires and Their Device Applications (2007)
  • Author(s): S. Hara, J. Motohisa, T.Fukui
  • Organizer: The 2007 International Symposium on Advanced Silicon-Based Nano-Devices(ISASN 2007)
  • Place of Presentation: Tokyo,Japan
  • Year and Date: 2007-11-09
• [Presentation] InP/InAs core-multishell heterostructure nanowires grown by metalorganic vapor phase epitaxy (2007)
  • Author(s): T. Fukui, P. Mohan, J. Motohisa
  • Organizer: 19th International Conference on Indium Phosphide and Related Materials
  • Place of Presentation: Matsue,Japan
• [Presentation] III-V compound semiconductor nanowires grown by selective area MOVPE (2007)
  • Author(s): T. Fukui, S. Hara, J. Motohisa
  • Organizer: 2nd International Lund Workshop on Nanowire Growth Mechanisms
  • Place of Presentation: Lund,Sweden
• [Presentation] III-V semiconductor nanowires and nanotubes grown by slective area metalorganic vapor phase epitaxy (2007)
  • Author(s): J. Motohisa, T. Fukui, S. Hara
  • Organizer: Internationl Conference on Nano Science and Technology(ICN+T 2007)
  • Place of Presentation: Stockholm,Sweden
• [Presentation] InP and InP/InAs multi-core shell nanowires grown by selective area MOVPE (2007)
  • Author(s): T. Fukui, Premila. Mohan, J. Motohisa
  • Organizer: International Conference on Modulated Semiconductor Structures
  • Place of Presentation: Genova,Italy
• [Presentation] III-V semiconductor hetero-structure nanowires by selective area MOVPE (2007)
  • Author(s): T. Fukui, S. Hara, J. Motohisa
  • Organizer: 2007 International Conference on Solid State Devices and Materials(SSDM 2007)
  • Place of Presentation: Tsukuba,Japan
• [Presentation] Growth Characteristics of III-V Semiconductor Nanowires (2007)
  • Author(s): K. Hiruma, S. Hara, J. Motohisa, Takasi Fukui
  • Organizer: The Second International Conference on One-dimensional Nanomaterials(ICON 2007)
  • Place of Presentation: Malmo,Sweden
• [Presentation] InP/InAs core-shell nanowires grown by selective area MOVPE (2007)
  • Author(s): T. Fukui, S. Hara, J. Motohisa
  • Organizer: 7th Wilhelm and Else Heraeus Seminar on Semiconducting Nanowires: Physics, Materials and Devices
  • Place of Presentation: Bad Honnef,German
• [Presentation] Formation and characterization of Fabry-Perot cavities in single GaAs nanowires (2007)
  • Author(s): B. Hua, J. motohisa, S. hara, T. Fukui
  • Organizer: The 34th international conference on compound semiconductors
  • Place of Presentation: Kyoto,Japan
• [Presentation] Growth of InGaAs nanowires on InP(111)B substrates by selective-area MOVPE (2007)
  • Author(s): T. Sato, J. Noborisaka, J. Motohisa, S. Hara, T. Fukui
  • Organizer: The US Biennial Workshop on Organometallic Vapor Phase Epitaxy
  • Place of Presentation: Salt Lake,USA
• [Presentation] Position-controlled Heteroepitaxial Growth of InAs Nanowires on Lattice-mismatched Substrates by Selective Area Metalorganic Vapor Phase Epitaxy (2007)
  • Author(s): K. Tomioka, J. Takeda, L. Yang, J. Motohisa, S. Hara, T. Fukui
  • Organizer: 2007 MRS Spring Meeting
  • Place of Presentation: San Francisco,USA
• [Remarks] ホームページ等
  • URL: http://www.rciqe.hokudai.ac.jp
• [Remarks]
  • URL: http://www.rciqe.hokudai.ac.jp
• [Remarks]
  • URL: http://www.rciqe.hokudai.ac.jp/
• [Remarks]
  • URL: http://www.rciqe.hokudai.ac.jp
• [Remarks]
  • URL: http://www.rciqe.hokudai.ac.jp/
• [Patent(Industrial Property Rights)] 半導体装置及び半導体装置の製造法 (2010)
  • Inventor(s): 冨岡克広、福井孝志、本久順一、原真二郎
  • Industrial Property Rights Holder: 北海道大学
  • Industrial Property Number: 2010-040019
  • Filing Date: 2010-02-25
• [Patent(Industrial Property Rights)] 発光素子および製造方法 (2009)
  • Inventor(s): 冨岡克広、福井孝志
  • Industrial Property Rights Holder: 北海道大学
  • Industrial Property Number: 2009-273561
  • Filing Date: 2009-12-03
• [Patent(Industrial Property Rights)] ナノワイヤ太陽電池及びその製造方法 (2009)
  • Inventor(s): 後藤肇、福井孝志、本久順一、比留間健之
  • Industrial Property Rights Holder: 本田技研工業(株)、北海道大学
  • Industrial Property Number: 2009-295806
  • Filing Date: 2009-12-25
• [Patent(Industrial Property Rights)] 太陽電池、カラーセンサ、ならびに発光素子および受光素子の製造方法 (2009)
  • Inventor(s): 比留間健之、本久順一、福井孝志
  • Industrial Property Rights Holder: 北海道大学
  • Industrial Property Number: 2009-272140
  • Filing Date: 2009-11-30
• [Patent(Industrial Property Rights)] トンネル電界効果トランジスタおよびその製造方法 (2009)
  • Inventor(s): 冨岡克広、福井孝志、田中智隆
  • Industrial Property Rights Holder: 北海道大学
  • Industrial Property Number: 2009-227564
  • Filing Date: 2009-09-30
• [Patent(Industrial Property Rights)] 半導体発光素子アレー、およびその製造方法 (2008)
  • Inventor(s): 比留間健之、原真二郎、本久順一、福井孝志
  • Industrial Property Rights Holder: 北海道大学
  • Filing Date: 2008-10-17
  • Overseas
• [Patent(Industrial Property Rights)] 半導体発光素子アレー、およびその製造方法 (2008)
  • Inventor(s): 比留間 健之、原 真二郎、本久 順一、福井 孝志
  • Industrial Property Rights Holder: 北海道大学
  • Filing Date: 2008-10-17
• [Patent(Industrial Property Rights)] 半導体発光素子アレー、およびその製造方法 (2008)
  • Inventor(s): 比留間健之、原真二郎、本久順一、福井孝志
  • Industrial Property Rights Holder: 北海道大学
  • Filing Date: 2008-10-17
  • Overseas
• [Patent(Industrial Property Rights)] ナノワイヤ太陽電池の構造と作製方法 (2008)
  • Inventor(s): 後藤肇、大橋智昭、本久順一、福井孝志
  • Industrial Property Rights Holder: (株)本田技術研究所、北海道大学
  • Filing Date: 2008-07-16
  • Overseas
• [Patent(Industrial Property Rights)] 多接合太陽電池の製造方法 (2008)
  • Inventor(s): 後藤肇、本久順一、福井孝志
  • Industrial Property Rights Holder: (株)本田技術研究所、北海道大学
  • Filing Date: 2008-09-03
  • Overseas
• [Patent(Industrial Property Rights)] 半導体構造物の製造方法 (2008)
  • Inventor(s): 冨岡克弘、福井孝志、本久順一、原真二郎
  • Industrial Property Rights Holder: 北海道大学
  • Filing Date: 2008-09-01
• [Patent(Industrial Property Rights)] 半導体発光素子アレー、およびその製造方法 (2007)
  • Inventor(s): 比留間健之・福井孝志・本久順一・原 真二郎
  • Industrial Property Rights Holder: 北海道大学
  • Industrial Property Number: 2007-214119
  • Filing Date: 2007-08-20