Balanced Full CMOS LSI for Ultra High Performance and Ultra Low PowerConsumption

• Project/Area Number: 18002004
• Research Category: Grant-in-Aid for Specially Promoted Research
• Allocation Type: Single-year Grants
• Review Section: Science and Engineering; Engineering
• Research Institution: Tohoku University
• Principal Investigator: OHMI Tadahiro Tohoku University, 未来科学技術共同研究センター, 教授 (20016463)
• Co-Investigator(Kenkyū-buntansha): SHIRAI Yasuyuki 東北大学, 未来科学技術共同研究センター, 准教授 (70375187) ; KITANO Masafumi 東北大学, 未来科学技術共同研究センター, 准教授 (60420048) ; TERAMOTO Akinobu 東北大学, 未来科学技術共同研究センター, 准教授 (80359554) ; 津守 俊郎 東北大学, 未来科学技術共同研究センター, 教授 (10375181)
• Project Period (FY): 2006 – 2008
• Project Status: Completed (Fiscal Year 2008)
• Budget Amount: ¥564,850,000 (Direct Cost: ¥434,500,000、Indirect Cost: ¥130,350,000); Fiscal Year 2008: ¥108,160,000 (Direct Cost: ¥83,200,000、Indirect Cost: ¥24,960,000); Fiscal Year 2007: ¥184,600,000 (Direct Cost: ¥142,000,000、Indirect Cost: ¥42,600,000); Fiscal Year 2006: ¥272,090,000 (Direct Cost: ¥209,300,000、Indirect Cost: ¥62,790,000)
• Keywords: LSI / MOSFET / 半導体製造プロセス / 半導体電子工学 / 半導体製造工学

Research Abstract

(1)(551)面SOI基板上にチャネルの方向をpMOSFETは<110>方向にnMOSFETは<110>方向に作製しn-MOSFETとp-MOSFETの寸法を一致させたバランスドCMOS構成、(2)Accumulation型のMOSFET、(3)Si表面の原子オーダの平坦化、(4)ラジカル反応を用いたあらゆる面方位に高品質なSiO_2/Si_3N_4の形成、(5)ソース・ドレイン電極の直列抵抗を2桁低減、これらの開発成果により超高速・超低消費電力バランスドCMOSを実現した。

Research Products

• [Journal Article] Charac- terization for High-Performance CMOS Using In-Water Advanced Kelvin -Contact Device Structure (2009)
  • Author(s): R. Kuroda, A. Teramoto, T. Komori, S. Sugawa, T. Ohmi
  • Journal Title: IEEE TRANSACTIONS ON SEMICONDUCTOR MANUFACTURING Vol.22,No.1 Pages: 126-133
  • Peer Reviewed
• [Journal Article] Atomically Flat Silicon Surface and Silicon/Insulator Interface Formation Technologies for (100) Surface Orientation Large-Diameter Wafers Introducing High Performance and Low-Noise Metal-Insulator- Silicon FETs (2009)
  • Author(s): R. Kuroda, T. Suwa, A. Teramoto, R. Hasebe, S. Sugawa, T. Ohmi
  • Journal Title: IEEE TRANSACTIONS ON ELECTRON DEVICES VOL.56,NO.2 Pages: 291-298
  • NAID: 120002338863
  • Peer Reviewed
• [Journal Article] Different mechanism to explain the 1/f noise in n-and p-SOI-MOS transistors fabricated on (110) and (100) silicon-oriented wafers (2009)
  • Author(s): P. Gaubert, A. Teramoto, W. Cheng, T. Hamada, T. Ohmi
  • Journal Title: Journal of Vacuum Science, Technology B Vol.27,No.1 Pages: 394-401
  • Peer Reviewed
• [Journal Article] Three-Step Room-Temperature Cleaning of Bare Silicon Surface for Radical-Reaction-Based Semiconductor Manufacturing (2009)
  • Author(s): R. Hasebe, A. Teramoto, R. Kuroda, T. Suwa, S. Sugawa, T. Ohmi
  • Journal Title: Journal of Electrochemical Society Vol.156No.1
  • Peer Reviewed
• [Journal Article] Characterization for High-Performance CMOS Using In-Water Advanced Kelvin-Contact Device Structure (2009)
  • Author(s): Rihito Kuroda
  • Journal Title: IEEE TRANSACTIONS ON SEMICONDUCTOR MANUFACTURING Vol.22, No.1 Pages: 126-133
  • Peer Reviewed
• [Journal Article] Atomically Flat Silicon Surface and Silicon/Insulator Interface Formation Technologies for (100) Surface Orientation Large-Diameter Wafers Introducing High Performance and Low-Noise Metal-Insulator-Silicon FETs (2009)
  • Author(s): Rihito Kuroda
  • Journal Title: IEEE TRANSACTIONS ON ELECTRON DEVICES VOL.56, NO.2 Pages: 291-298
  • Peer Reviewed
• [Journal Article] Different mechanism to explain the 1/f noise in n-and p-SOI-MOS transistors fabricated on (110) and (100) silicon-oriented wafers (2009)
  • Author(s): Philippe Gaubert
  • Journal Title: Journal of Vacuum Science & Technology B Vol.27, No.1 Pages: 394-401
  • Peer Reviewed
• [Journal Article] Three-Step Room-Temperature Cleaning of Bare Silicon Surface for Radical-Reaction-Based Semiconductor Manufacturing (2009)
  • Author(s): Rui Hasebe
  • Journal Title: Journal of Electrochemical Society Vol.156, No.1
  • Peer Reviewed
• [Journal Article] Angle-resolved photoelectron study on the structures of silicon nitride films and Si3N4/Si interfaces formed using nitrogen-hydrogen radicals (2008)
  • Author(s): T. Aratani, M. Higuchi, S. Sugawa, E. Ikenaga, J. Ushio, H. Nohira, T. Suwa, A. Teramoto, T. Ohmi, T. Hattori
  • Journal Title: JOURNAL OF APPLIED PHYSICS Vol.104,No.11
  • NAID: 120002338929
  • Peer Reviewed
• [Journal Article] Formation and Property of Yttrium and Yttrium Silicide Films as Low Schottcky Barrier material for n-Type Silicon (2008)
  • Author(s): T. ISOGAI, H. TANAKA, T. GOTO, A. TERAMOTO, S. SUGAWA, T. OHMI
  • Journal Title: Japanese Journal of Applied Physics Vol.47,No.4 Pages: 3138-3141
  • Peer Reviewed
• [Journal Article] Performance Comparison of Ultrathin Fully Depleted Silicon-on-Insulator Inversion-, Intrinsic-, and Accumulation-Mode Metal-Oxide-Semiconductor Field-Effect Transistors (2008)
  • Author(s): R. KURODA, A. TERAMOTO, S. SUGAWA, T. OHMI
  • Journal Title: Japanese Journal of Applied Physics Vol.47,No.4 Pages: 2668-2671
  • NAID: 210000064562
  • Peer Reviewed
• [Journal Article] Angle-resolved photoelectron study on the structures of silicon nitride films and Si_3N_4/Si interfaces formed using nitrogen-hydrogen radicals (2008)
  • Author(s): Takashi Aratani
  • Journal Title: JOURNAL OF APPLIED PHYSICS Vol.104, No.11
  • Peer Reviewed
• [Journal Article] Accurate negative bias temperature instability lifetime prediction based on hole injection (2008)
  • Author(s): Akinobu Teramoto
  • Journal Title: Microelectronics Reliability 48 Pages: 1649-1654
  • Peer Reviewed
• [Journal Article] Formation and Property of Yttrium and Yttrium Silicide Films as Low Schottcky Barrier material for n-Type Silicon (2008)
  • Author(s): Tatsunori ISOGAI
  • Journal Title: Japanese Journal of Applied Physics Vol.47, No.4 Pages: 3138-3141
  • Peer Reviewed
• [Journal Article] Performance Comparison of Ultrathin Fully Depleted Silicon-on-Insulator Inversion-, Intrinsic-, and Accumulation-Mode Metal-Oxide-Semiconductor Field-Effect Transistors (2008)
  • Author(s): Rihito KURODA
  • Journal Title: Japanese Journal of Applied Physics Vol.47, No.4 Pages: 2668-2671
  • Peer Reviewed
• [Journal Article] Performance Boost Using a New Device Structure Design for SOI MOSFETs Beyond 25nm Node (2007)
  • Author(s): W. Cheng, A. Teramoto, T. Ohmi
  • Journal Title: Electrochemical Society Transactions Vol.11No.6 Pages: 349-354
  • Peer Reviewed
• [Journal Article] High Performance and highly reliable novel CMOS devices using accumulation mode multi-gate and fully depleted SOI MOSFETs (2007)
  • Author(s): W. Cheng, A. Teramoto, R. Kuroda, M. Hirayama, T. Ohmi
  • Journal Title: Microelectronic Engineering Vol.84/9-10 Pages: 2105-2108
  • Peer Reviewed
• [Journal Article] Revolutional Progress of Silicon Technologies Exhibiting Very High Speed Performance Over a 50-GHz Clock Rate (2007)
  • Author(s): T. Ohmi, A. Teramoto, R. Kuroda, N. Miyamoto
  • Journal Title: IEEE TRANSACTIONS ON ELECTRON DEVICES VOL.54,NO.6 Pages: 1471-1477
  • NAID: 120002338879
  • Peer Reviewed
• [Journal Article] Very Hight Carrier Mobility for High-Performance CMOS on a Si(110) Surface (2007)
  • Author(s): A. Teramoto, T. Hamada, M. Yamamoto, P. Gaubert, H. Akahori, K. Nii, M. Hirayama, K. Arima, K. Endo, S. Sugawa, T. Ohmi
  • Journal Title: IEEE TRANSACTIONS ON ELECTRON DEVICES VOL.54,NO.6 Pages: 1438-1445
  • Peer Reviewed
• [Journal Article] Hot Carrier Instability Mechanism in Accumulation- Mode Normally-off SOI nMOSFETs and Their Reliability Advantage (2007)
  • Author(s): R. Kuroda, A. Teramoto, W. Cheng, S. Sugawa, T. Ohmi
  • Journal Title: ECS Transactions Vol.6No.4 Pages: 113-118
  • Peer Reviewed
• [Journal Article] Impact of Improved Mobilities and Suppressed 1/f Noise in Fully Depleted SOI MOSFETs Fabricated on Si(110) Surface (2007)
  • Author(s): W. Cheng, A. Teramoto, C. Tye, P. Gaubert, M. Hirayama, S. Sugawa, T. Ohmi
  • Journal Title: ECS Transactions Vol.6No.4 Pages: 101-106
  • Peer Reviewed
• [Journal Article] Electric Characteristics of Si3N4 Films Formed by Directly Radical Nitridation on Si(110) and Si(100) Surfaces (2007)
  • Author(s): M. HIGUCHI, T. ARATANI, T. HAMADA, S. SHINAGAWA, H. NOHIRA, E. IKENAGA, A. TERAMOTO, T. HATTORI, S. SUGAWA, T. OHMI
  • Journal Title: Japanese Journal of Applied Physics Vol.46,No.4B Pages: 1895-1898
  • Peer Reviewed
• [Journal Article] Low leakage Current and Low Resistivity p+n Diodes on Si (110) Fabricated by Ga+ and B+ Dual Ion Implantation for Low Temperature Source-Drain Activation (2007)
  • Author(s): Hiroshi IMAI
  • Journal Title: Japanese Journal of Applied Physics 46 Pages: 1848-1852
  • Peer Reviewed
• [Journal Article] Electric Characteristics of Si_3N_4 Films Formed by Directly Radical Nitridation on Si (110) and Si (100) Surfaces (2007)
  • Author(s): Masaaki HIGUCHI
  • Journal Title: Japanese Journal of Applied Physics 46 Pages: 1895-1898
  • Peer Reviewed
• [Journal Article] Impact of Improved Mobilities and Suppressed 1/f Noise in Fully Depleted SOI MOSFETs Fabricated on Si (110) Surface (2007)
  • Author(s): Weitao Cheng
  • Journal Title: ECS Transactions 6 Pages: 101-106
  • Peer Reviewed
• [Journal Article] Hot Carrier Instability Mechanism in Accumulation-Mode Normally-off SOI nMOSFETs and Their Reliability Advantage (2007)
  • Author(s): Rihito Kuroda
  • Journal Title: ECS Transactions 6 Pages: 113-118
  • Peer Reviewed
• [Journal Article] Accuracy and Applicability of Low-Frequency C-V Measurement Methods for Characterization of Ultrathin Gate Dielectrics with Large Current (2007)
  • Author(s): Rihito Kuroda
  • Journal Title: IEEE TRANSACTIONS ON ELECTRON DEVICES 54 Pages: 1115-1124
  • Peer Reviewed
• [Journal Article] Very High Carrier Mobility for High-Performance CMOS on a Si (110) Surface (2007)
  • Author(s): Akinobu Teramoto
  • Journal Title: IEEE TRANSACTIONS ON ELECTRON DEVICES 54 Pages: 1438-1445
  • NAID: 120002338878
  • Peer Reviewed
• [Journal Article] Revolutional Progress of Silicon Technologies Exhibiting Very High Speed Performance Over a 50-GHz Clock Rate (2007)
  • Author(s): Tadahiro Ohmi
  • Journal Title: IEEE TRANSACTIONS ON ELECTRON DEVICES 54 Pages: 1471-1477
  • Peer Reviewed
• [Journal Article] High Performance and highly reliable novel CMOS devices using accumulation mode multi-gate and fully depleted SOI MOSFETs (2007)
  • Author(s): Weitao Cheng
  • Journal Title: Microelectronic Engineering 84 Pages: 2105-2108
  • Peer Reviewed
• [Journal Article] Performance Boost Using a New Device Structure Design for SOI MOSFETs Beyond 25nm Node (2007)
  • Author(s): Weitao Cheng
  • Journal Title: ECS Transactions 11 Pages: 349-354
  • Peer Reviewed
• [Journal Article] Damage-free microwave-excited plasma etching without carrier deactivation of heavily doped Si under thin silicide layer (2007)
  • Author(s): Tetsuya Goto
  • Journal Title: Journal of Vacuum Science & Technology A 26 Pages: 8-16
  • Peer Reviewed
• [Journal Article] ラジカル窒化シリコン酸窒化膜における窒素プロファイルのX線光電子分光分析による評価 (2007)
  • Author(s): 河瀬和雅
  • Journal Title: 真空 50 Pages: 672-677
  • Peer Reviewed
• [Journal Article] マイクロ波励起プラズマを用いた高品質シリコン窒化膜の形成 (2007)
  • Author(s): 寺本章伸
  • Journal Title: 真空 50 Pages: 659-664
  • NAID: 10020009820
  • Peer Reviewed
• [Journal Article] New era of silicon technologies due to radical reation based semiconductor manufacturing (2006)
  • Author(s): Tadahiro Ohmi
  • Journal Title: Journal of Physics D : Applied Physics 39
• [Journal Article] Impact of Improved High-Performance Si(110)- Oriented Metal-Oxide-Semiconductor Field-Effect Transistors Using Accumulation-Mode Fully Depleted Silicon-on-Insulator Devices (2006)
  • Author(s): Weitao CHENG
  • Journal Title: Japanese Journal of Applied Physics 45・4B Pages: 3110-3116
• [Presentation] Advanced Method for Measuring Ultra-Low Contact Resistivity Between Silicide and Silicon Based on Cross Bridge Kelvin Resistor (2009)
  • Author(s): T.Isogai
  • Organizer: 2009 IEEE International Conference on Microelectronic Test Structures
  • Place of Presentation: Oxnard, California, USA
  • Year and Date: 2009-04-01
• [Presentation] Improved High Temperature Characteristics in Accumulation-mode Fully Depleted SOI MOSFETs on Si(100) and (110) Surfaces (2008)
  • Author(s): W. Cheng, A. Teramoto, T. Ohmi
  • Organizer: PACIFIC RIM MEETING ON ELECTROCHEMICAL AND SOLID-STATE SCIENCE (PRiME2008)The Electrochemical Society, Meeting Abstracts, Abs
  • Place of Presentation: Honolulu, Hawaii, USA
  • Year and Date: 2008-10-14
• [Presentation] Improved High Temperature Characteristics in Accumulation-mode Fully Depleted SOI MOSFETs on Si(100) and (110) Surfaces (2008)
  • Author(s): W.Cheng
  • Organizer: PACIFIC RIM MEETING ON ELECTROCHEMICAL AND SOLID-STATE SCIENCE (PRiME2008)The Electrochemical Society
  • Place of Presentation: Honolulu, Hawaii, USA
  • Year and Date: 2008-10-14
• [Presentation] Hole mobility in Si(110) p-MOS transistors (2008)
  • Author(s): P. Gaubert, A. Teramoto, T. Ohmi
  • Organizer: PACIFIC RIM MEETING ON ELECTROCHEMICAL AND SOLID-STATE SCIENCE (PRiME2008)The Electrochemical Society, Meeting Abstracts
  • Place of Presentation: Honolulu, Hawaii, USA
  • Year and Date: 2008-10-13
• [Presentation] Three-Step Room Temperature Cleaning of Bare Silicon Surface for Radical Based Semiconductor Manufacturing (2008)
  • Author(s): Rui Hasebe
  • Organizer: PACIFIC RIM MEETING ON ELECTROCHEMICAL AND SOLID-STATE SCIENCE (PRiME2008)The Electrochemical Society
  • Place of Presentation: Honolulu, Hawaii, USA
  • Year and Date: 2008-10-13
• [Presentation] Hole mobility in Si(110) p-MOS transistors (2008)
  • Author(s): P.Gaubert
  • Organizer: PACIFIC RIM MEETING ON ELECTROCHEMICAL AND SOLID-STATE SCIENCE (PRiME2008)The Electrochemical Society
  • Place of Presentation: Honolulu, Hawaii, USA
  • Year and Date: 2008-10-13
• [Presentation] A Study on Very High Performance Novel Balanced FD-SOI CMOSFETs on Si(110) Using Accumulation Mode Device Structure for RF Analog Circuits (2008)
  • Author(s): W. Cheng, A. Teramoto, C.F. Tye, R. Kuroda, S. Sugawa, T. Ohmi
  • Organizer: Extended Abstracts of the 2008 International Conference on SOLID STATE DEVICES AND MATERIALS
  • Place of Presentation: Tsukuba, JAPAN
  • Year and Date: 2008-09-26
• [Presentation] CMOSFET Featuring Atomically Flat Gate Insulator Film/Silicon Interface on (100) Orientation Surface (2008)
  • Author(s): R. Kuroda, A. Teramoto, T. Suwa, Y. Nakao, S. Sugawa, T. Ohmi
  • Organizer: Extended Abstracts of the 2008 International Conference on SOLID STATE DEVICES AND MATERIALS
  • Place of Presentation: Tsukuba, JAPAN
  • Year and Date: 2008-09-26
• [Presentation] A Study on Very High Performance Novel Balanced FD-SOI CMOSFETs on Si(110) Using Accumulation Mode Device Structure for RF Analog Circuits (2008)
  • Author(s): Weitao Cheng
  • Organizer: the 2008 International Conference on SOLID STATE DEVICES AND MATERIALS
  • Place of Presentation: Tsukuba, Japan
  • Year and Date: 2008-09-26
• [Presentation] CMOSFET Featuring Atomically Flat Gate Insulator Film/Silicon Interface on (100) Orientation Surface (2008)
  • Author(s): R.Kuroda
  • Organizer: the 2008 International Conference on SOLID STATE DEVICES AND MATERIALS
  • Place of Presentation: Tsukuba, Japan
  • Year and Date: 2008-09-26
• [Presentation] Impact of Tungsten Capping Layer on Yttrium Silicide for Low Resistance Source/Drain Contacts (2008)
  • Author(s): T. Isogai, H. Tanaka, T. Goto, A. Teramoto, S. Sugawa, T. Ohmi
  • Organizer: Extended Abstracts of the 2008 International Conference on SOLID STATE DEVICES AND MATERIALS
  • Place of Presentation: Tsukuba, JAPAN
  • Year and Date: 2008-09-25
• [Presentation] Impact of Tungsten Capping Layer on Yttrium Silicide for Low Resistance Source/Drain Contacts (2008)
  • Author(s): Tatsunori Isogai
  • Organizer: the 2008 International Conference on SOLID STATE DEVICES AND MATERIALS
  • Place of Presentation: Tsukuba, Japan
  • Year and Date: 2008-09-25
• [Presentation] 3-step room temperature wet cleaning process for silicon substrate (2008)
  • Author(s): R.Hasebe
  • Organizer: 9^<th> International Symposium on Ultra Clean Processing of Semiconductor Surfaces
  • Place of Presentation: Brugge, Belgium
  • Year and Date: 2008-09-23
• [Presentation] Atomically Flat Gate Insulator/Silicon (100) Interface Formation Introducing High Mobility, Ultra-low Noise, and Small Characteristics Variation CMOSFET (2008)
  • Author(s): R. Kuroda, A. Teramoto, T. Suwa, R. Hasebe, X. Li, M. Konda, S. Sugawa, T. Ohmi
  • Organizer: 38th European Solid-State Device Research Conference (ESSDERC 2008)
  • Place of Presentation: Edinburgh, SCOTLAND
  • Year and Date: 2008-09-16
• [Presentation] Atomically Flat Gate Insulator/Silicon (100) Interface Formation Introducing High Mobility, Ultra-low Noise, and Small Characteristics Variation CMOSFET (2008)
  • Author(s): R.Kuroda
  • Organizer: 38^<th> European Solid-State Device Research Conference
  • Place of Presentation: Edinburgh, Scotland
  • Year and Date: 2008-09-16
• [Presentation] Impact of Performance and Reliability Boosters in Novel FD-SOI CMOS Devices on Si(110) Surface for Analog Applications (2008)
  • Author(s): W. Cheng, A. Teramoto, R. Kuroda, C.F. Tye, S. Watabe, S. Sugawa, T. Ohmi
  • Organizer: 29th International Conference on the Physics of Semiconductors (ICPS 2008)
  • Place of Presentation: Rio de Janeiro, BRAZIL
  • Year and Date: 2008-07-31
• [Presentation] Impact of Performance and Reliability Boosters in Novel FD-SOI CMOS Devices on Si(110) Surface for Analog Applications (2008)
  • Author(s): Weitao Cheng
  • Organizer: 29^<th> International Conference on the Physics of Semiconductors
  • Place of Presentation: Rio de Janeiro, Brazil
  • Year and Date: 2008-07-31
• [Presentation] A New Approach to Realize High Performance RF Power FETs on Si (110) Surface (2008)
  • Author(s): W. Cheng, A. Teramoto, T. Ohmi
  • Organizer: 39th IEEE Annual Power Electronics Specialists Conference
  • Place of Presentation: Rhodes, GREECE
  • Year and Date: 2008-06-18
• [Presentation] A New Approach to Realize High Performance RF Power FETs on Si (110) Surface (2008)
  • Author(s): Weitao Cheng
  • Organizer: 39^<th> IEEE Annual Power Electronics Specialists Conference
  • Place of Presentation: Rhodes, Greece
  • Year and Date: 2008-06-18
• [Presentation] Impact of New Approach to Improve RF Power FETs Performance on Si (110) Surface (2008)
  • Author(s): W. Cheng, A. Teramoto, T. Ohmi
  • Organizer: 213th Meeting of The Electrochemical Society
  • Place of Presentation: Phoenix, AZ, USA
  • Year and Date: 2008-05-20
• [Presentation] Characterization of MOSFETs Intrinsic Performance using In-Wafer Advanced Kelvin-Contact Device Structure for High Performance CMOS LSIs (2008)
  • Author(s): Cheng, S. Watabe, C.F. Tye, S. Sugawa, T. Ohmi
  • Organizer: 2008 IEEE International Conference on Microelectronic Test Structures
  • Place of Presentation: Edinburgh, SCOTLAND
  • Year and Date: 2008-03-26
• [Presentation] Characterization of MOSFETs Intrinsic Performance using In-Wafer Advanced Kelvin-Contact Device Structure for High Performance CMOS LSIs (2008)
  • Author(s): Rihito Kuroda
  • Organizer: 2008 IEEE International Conference on Microelectronic Test Structures
  • Place of Presentation: Edinburgh
  • Year and Date: 2008-03-26
• [Presentation] The Cleaning Method Which is Able to Keep the Smoothness of Si (100) (2008)
  • Author(s): Xiang Li
  • Organizer: International Semiconductor Technology Conference 2008
  • Place of Presentation: Shanghai
  • Year and Date: 2008-03-16
• [Presentation] Revolutional Progress of Silicon Device due to Radical Reaction Based Semiconductor Manufacturing Technologies (2008)
  • Author(s): Tadahiro Ohmi
  • Organizer: WPI & IFCAM Joint Workshop
  • Place of Presentation: Sendai
  • Year and Date: 2008-02-19
• [Presentation] Atomically Flat Gate Insulator / Silicon (100) Interface Formation Technology for High Performance LSI (2008)
  • Author(s): Akinobu Teramoto
  • Organizer: WPI & IFCAM Joint Workshop
  • Place of Presentation: Sendai
  • Year and Date: 2008-02-18
• [Presentation] Radical induced very high integrity gate insulator films for 3D transistors on any crystal orientation Si surface (2007)
  • Author(s): Tadahiro Ohmi
  • Organizer: Stanford & Tohoku University Joint Open Workshop on 3D Transistor and its Applications
  • Place of Presentation: Palo Alto
  • Year and Date: 2007-11-20
• [Presentation] Revolutional Progress of Silicon Technologies Revolutional Progress of Device Perfoemance and Manufacturing Technologies (2007)
  • Author(s): T. Ohmi
  • Organizer: The 7th Japan-Taiwan Microelectronics International Symposium
  • Place of Presentation: Tokyo, JAPAN
  • Year and Date: 2007-10-24
• [Presentation] Revolutional Progress of Silicon Technologies Revolutional Progress of Device Perfoemance and Manufacturing Technologies (2007)
  • Author(s): Tadahiro Ohmi
  • Organizer: The 7th Japan-Taiwan Microelectronics International Symposium
  • Place of Presentation: Tokyo
  • Year and Date: 2007-10-24
• [Presentation] Development of a Xenon Recycling and Supply System for Plasm Process (2007)
  • Author(s): Masaya Yamawaki
  • Organizer: International Symposium on Semiconductor Manufacturing 2007
  • Place of Presentation: Santa Clara
  • Year and Date: 2007-10-16
• [Presentation] Performance Boost Using a New Device Structure Design for SOI MOSFETs Beyond 25nm Node (2007)
  • Author(s): W. Cheng, A. Teramoto, T. Ohmi
  • Organizer: 212th Meeting of The Electrochemical Society
  • Place of Presentation: Washington D.C. USA
  • Year and Date: 2007-10-10
• [Presentation] Performance Boost Using a New Device Structure Design for SOI MOSFETs Beyond 25nm Node (2007)
  • Author(s): Weitao Cheng
  • Organizer: 212th Meeting of The Electrochemical Society
  • Place of Presentation: Washington D.C.
  • Year and Date: 2007-10-10
• [Presentation] High Performance Accumulation Mode FD-SOI MOSFETs on Si(100) and (100)Surfaces (2007)
  • Author(s): Weitao Cheng
  • Organizer: 電子情報通信学会シリコン材料・デバイス研究会
  • Place of Presentation: Sendai
  • Year and Date: 2007-10-05
• [Presentation] シリコン表面の原子オーダー平坦化技術 (2007)
  • Author(s): 諏訪智之
  • Organizer: 電子情報通信学会シリコン材料・デバイス研究会
  • Place of Presentation: 仙台
  • Year and Date: 2007-10-05
• [Presentation] 先端DRAMでのSiONゲート絶縁膜における窒素プロファイルと素子特性について (2007)
  • Author(s): 村川恵美
  • Organizer: 電子情報通信学会シリコン材料・デバイス研究会
  • Place of Presentation: 仙台
  • Year and Date: 2007-10-04
• [Presentation] Modeling and Implementation of Subthreshold Characteristics of Accumulation-Mode MOSFETs for Various SOI Layer Thickness and Impurity Concentrations (2007)
  • Author(s): R. Kuroda, A. Teramoto, C. Weitao, S. Sugawa, T. Ohmi
  • Organizer: 2007 IEEE International SOI Conference
  • Place of Presentation: Indian Wells, CA., USA
  • Year and Date: 2007-10-02
• [Presentation] Modeling and Implementation of Subthreshold Characteristics of Accumulation-Mode MOSFETs for Various SOI Layer Thickness and Impurity Concentrations (2007)
  • Author(s): Rihito Kuroda
  • Organizer: 2007 IEEE International SOI Conference
  • Place of Presentation: Indian Wells
  • Year and Date: 2007-10-02
• [Presentation] Performance Comparison of Ultra-thin FD-SOI Inversion-, Intrinsic-and Accumulation- Mode MOSFETs (2007)
  • Author(s): R. Kuroda, A. Teramoto, S. Sugawa, T. Ohmi
  • Organizer: Extended Abstracts of the 2007 International Conference on SOLID STATE DEVICES and MATERIALS
  • Place of Presentation: Tsukuba, JAPAN
  • Year and Date: 2007-09-20
• [Presentation] Performance Comparison of Ultra-thin FD-SOI Inversion-, Intrinsic-and Accumulation- Mode MOSFETs (2007)
  • Author(s): Rihito Kuroda
  • Organizer: International Conference on SOLID STATE DEVICES and MATERIALS
  • Place of Presentation: Tsukuba
  • Year and Date: 2007-09-20
• [Presentation] Low Contract Resistance with Low Schottky Barrier for N-Type Silicon Using Yttrium Silicide (2007)
  • Author(s): T. Isogai, H. Tanaka, T. Goto, A. Teramoto, S. Sugawa, T. Ohmi
  • Organizer: Extended Abstracts of the 2007 International Conference on SOLID STATE DEVICES and MATERIALS
  • Place of Presentation: Tsukuba, JAPAN
  • Year and Date: 2007-09-19
• [Presentation] Low Contract Resistance with Low Schottky Barrier for N-Type Silicon Using Yttrium Silicide (2007)
  • Author(s): Tatsunori Isogai
  • Organizer: International Conference on SOLID STATE DEVICES and MATERIALS
  • Place of Presentation: Tsukuba
  • Year and Date: 2007-09-19
• [Presentation] Impact of the channel direction on the 1/f noise in SOI-MOSFETs fabricated on (100) and (110) silicon oriented wafers (2007)
  • Author(s): Philippe Gaubert
  • Organizer: 19th International Conference on NOISE AND FLUCTUATIONS-ICNF2007
  • Place of Presentation: Tokyo
  • Year and Date: 2007-09-11
• [Presentation] High Performance and highly reliable novel CMOS devices using accumulation mode multi-gate and fully depleted SOI MOSFETs (2007)
  • Author(s): W. Cheng, A. Teramoto, R. Kuroda, M. Hirayama, T. Ohmi
  • Organizer: Infos2007 Proceedings of the 15th Biennial Conference on Insulating Films on Semiconsuctors
  • Place of Presentation: Athena, GREECE
  • Year and Date: 2007-06-20
• [Presentation] High Performance and highly reliable novel CMOS devices using accumulation mode multi-gate and fully depleted SOI MOSFETs (2007)
  • Author(s): Weitao Cheng
  • Organizer: 15th Biennial Conference on Insulating Films on Semiconductors
  • Place of Presentation: Athena
  • Year and Date: 2007-06-20
• [Presentation] プラズマ窒化膜/Siの界面構造、サブナイトライド、電子帯構造 (2007)
  • Author(s): 寺本章伸
  • Organizer: 電子情報通信学会シリコン材料・デバイス研究会
  • Place of Presentation: 東広島市
  • Year and Date: 2007-06-08
• [Presentation] プラズマ窒化膜/Siの界面構造、サブナイトライド、価電子帯構造 (2007)
  • Author(s): 寺本章伸
  • Organizer: 応用物理学会シリコンテクノロジー分科会
  • Place of Presentation: 東広島市
  • Year and Date: 2007-06-08
• [Presentation] Hot Carrier Instability Mechanism in Accumulation-Mode Normally-off SOI nMOSFETs and Their Reliability Advantage (2007)
  • Author(s): R. Kuroda, A. Teramoto, W. Cheng, S. Sugawa, T. Ohmi
  • Organizer: 211th Meeting of The Electrochemical Society
  • Place of Presentation: Chicago, USA
  • Year and Date: 2007-05-08
• [Presentation] Impact of Improved Mobilities and Suppressed 1/f Noise in Fully Depleted SOI MOSFETs Fabricated on Si(110) Surface (2007)
  • Author(s): W. Cheng, A. Teramoto, C. Tye, P. Gaubert, M. Hirayama, S. Sugawa, T. Ohmi
  • Organizer: 211th Meeting of The Electrochemical Society
  • Place of Presentation: Chicago, USA
  • Year and Date: 2007-05-08
• [Presentation] Impact of Improved Mobilities and Suppressed 1/f Noise in Fully Depleted SOI MOSFETs Fabricated on Si (110) Surface (2007)
  • Author(s): Weitao Cheng
  • Organizer: 211th Meeting of The Electrochemical Society
  • Place of Presentation: Chicago
  • Year and Date: 2007-05-08
• [Presentation] Hot Carrier Instability Mechanism in Accumulation-Mode Normally-off SOI nMOSFETs and Their Reliability Advantage (2007)
  • Author(s): Rihito Kuroda
  • Organizer: 211th Meeting of The Electrochemical Society
  • Place of Presentation: Chicago
  • Year and Date: 2007-05-08
• [Book] Advanced Gate Stacks for High-Mobility Semiconductors (2007)
  • Author(s): A. Teramoto, T Ohmi
• [Book] SPRINGER SERIES IN ADVANCED MICROELECTRONICS Advanced Gate Stacks for High-Mobility Semiconductors (2007)
  • Author(s): Akinobu Teramoto
  • Total Pages: 383
  • Publisher: SPRINGER
• [Patent(Industrial Property Rights)] コンタクト形成方法、半導体装置の製造方法および半導体装置 (2008)
  • Inventor(s): 大見忠弘
  • Industrial Property Rights Holder: 国立大学法人東北大学, (財)国際科学振興財団
  • Industrial Property Number: 2008-129692
  • Filing Date: 2008-05-16
• [Patent(Industrial Property Rights)] 半三次元構造半導体装置 (2008)
  • Inventor(s): 大見忠弘, 寺本章伸
  • Industrial Property Rights Holder: 国立大学法人東北大学, (財)国際科学振興財団
  • Industrial Property Number: 2007-088444
  • Filing Date: 2008-03-29
• [Patent(Industrial Property Rights)] 半導体装置およびその製造方法 (2007)
  • Inventor(s): 大見忠弘, 寺本章伸
  • Industrial Property Rights Holder: 国立大学法人東北大学, 東京エレクトロン(株)
  • Industrial Property Number: 2007-283659
  • Filing Date: 2007-10-31
• [Patent(Industrial Property Rights)] 半導体基板および半導体装置 (2007)
  • Inventor(s): 見忠弘, 寺本章伸, 諏訪智之, 黒田理人, 工藤秀雄, 速水善範
  • Industrial Property Rights Holder: 国立大学法人東北大学, 信越半導体(株)
  • Industrial Property Number: 2007-261096
  • Filing Date: 2007-10-04
• [Patent(Industrial Property Rights)] 半導体基板および半導体装置 (2007)
  • Inventor(s): 大見 忠弘 寺本 章伸 諏訪 智之 黒田 理人 工藤 秀雄 速水 善範
  • Industrial Property Rights Holder: 国立大学法人東北大学 信越半導体(株)
  • Industrial Property Number: 2007-261096
  • Filing Date: 2007-10-04
• [Patent(Industrial Property Rights)] 半導体装置およびその製造方法 (2007)
  • Inventor(s): 大見 忠弘 寺本 章伸
  • Industrial Property Rights Holder: 国立大学法人東北大学 東京エレクトロン(株)
  • Industrial Property Number: 2007-283659
  • Filing Date: 2007-10-31
• [Patent(Industrial Property Rights)] 樹脂配管 (2007)
  • Inventor(s): 大見 忠弘 寺本 章伸 伏見 圭太 山中 二朗 宮下 雅之 西岡 群晴
  • Industrial Property Rights Holder: 国立大学法人東北大学 ニチアス(株) ステラケミファ(株) 宇部興産株式会社
  • Industrial Property Number: 2007-338690
  • Filing Date: 2007-12-28