Development of Atomically Controlled Plasma Processing for GroupIV Quantum Device Fabrication

• Project/Area Number: 18063001
• Research Category: Grant-in-Aid for Scientific Research on Priority Areas
• Allocation Type: Single-year Grants
• Review Section: Science and Engineering
• Research Institution: Tohoku University
• Principal Investigator: SAKURABA Masao Tohoku University, 電気通信研究所, 准教授 (30271993)
• Co-Investigator(Kenkyū-buntansha): MUROTA Junichi 東北大学, 電気通信研究所, 教授 (70182144)
• Project Period (FY): 2006 – 2009
• Project Status: Completed (Fiscal Year 2009)
• Budget Amount: ¥41,200,000 (Direct Cost: ¥41,200,000); Fiscal Year 2009: ¥7,600,000 (Direct Cost: ¥7,600,000); Fiscal Year 2008: ¥8,000,000 (Direct Cost: ¥8,000,000); Fiscal Year 2007: ¥8,000,000 (Direct Cost: ¥8,000,000); Fiscal Year 2006: ¥17,600,000 (Direct Cost: ¥17,600,000)
• Keywords: 量子へテロ構造 / プラズマ / エピタキシャル成長 / 原子層制御 / IV族半導体 / 量子ヘテロ構造

Research Abstract

By utilizing surface reaction of reactant gases under ECR Ar plasma irradiation without substrate heating, epitaxial growth of atomically flat highly strained films of Ge and Si as well as B atomic-layer doped Si were demonstrated. Moreover, by lowering of the plasma energy in the epitaxial growth, it was clarified that plasma damage and surface B reduction by Ar plasma irradiation can be effectively suppressed and it is quite important to increase of strain and B concentration in the B atomic-layer doped films.

Research Products

• [Journal Article] Electrical Characteristics of Thermal CVD B-Doped Si Films on Highly Strained Si Epitaxially Grown on Ge(100) by Plasma CVD without Substrate Heating (2010)
  • Author(s): K. Sugawara、M. Sakuraba, J. Murota
  • Journal Title: Thin Solid Films Vol.518
  • Peer Reviewed
• [Journal Article] Heavy B Atomic-Layer Doping in Si Epitaxial Growth on Si(100) Using Electron-Cyclotron-Resonance Plasma CVD (2010)
  • Author(s): T. Nosaka、M. Sakuraba、B. Tillack, J. Murota
  • Journal Title: Thin Solid Films Vol.518
  • Peer Reviewed
• [Journal Article] Electrical Characteristics of Thermal CVD B-Doped Si Films on Highly Strained Si Epitaxially Grown on Ge(100)by Plasma CVD without Substrate Heating (2010)
  • Author(s): K.Sugawara
  • Journal Title: Thin Solid Films 518 Pages: 57-61
  • Peer Reviewed
• [Journal Article] Heavy B Atomic-Layer Doping in Si Epitaxial Growth on Si(100)Using Electron-Cyclotron-Resonance Plasma CVD (2010)
  • Author(s): T.Nosaka
  • Journal Title: Thin Solid Films 518 Pages: 140-142
  • Peer Reviewed
• [Journal Article] Improvement in Negative Differential Conductance Characteristics of Hole Resonant-Tunneling Diodes with High Ge Fraction Si/Strained Si1-xGex/Si(100) Heterostructure (2009)
  • Author(s): T. Seo、K. Takahashi、M. Sakuraba, J. Murota
  • Journal Title: Solid-State Electron Vol.53 Pages: 912-915
  • Peer Reviewed
• [Journal Article] Improvement in Negative Differential Conductance Characteristics of Hole Resonant-Tunneling Diodes with High Ge Fraction Si/Strained Si_(1-x)Ge_x/Si(100) Heterostructure (2009)
  • Author(s): T.Seo
  • Journal Title: Solid-State Electron 53 Pages: 912-915
  • Peer Reviewed
• [Journal Article] Improvement in Negative Differential Conductance Characteristics of Hole Resonant Tunneling Diodes with High Ge Fraction Si/Strained Si_<1-x>Ge_x/Si(100) Heterostructure (2009)
  • Author(s): T. Seo, K. Takahashi, M. Sakuraba and J. Murota
  • Journal Title: Solid State Electron accepted
• [Journal Article] Very Low-Temperature Epitaxial Growth of Silicon and Germanium Using Plasma-Assisted CVD (2008)
  • Author(s): M. Sakuraba, D. Muto, M. Mori, K. Sugawara, J. Murota
  • Journal Title: Thin Solid Films Vol.517 Pages: 10-13
  • Peer Reviewed
• [Journal Article] Impact of Ge Fraction Modulation upon Electrical Characteristics of Hole Resonant Tunneling Diodes with Si/Strained Si1-xGex/Si(100) Heterostructure (2008)
  • Author(s): T. Seo、M. Sakuraba, J. Murota
  • Journal Title: Thin Solid Films Vol.517 Pages: 110-112
  • Peer Reviewed
• [Journal Article] Electrical Characteristics of Hole Resonant Tunneling Diodes with High Ge Fraction (x>0. 4) Si/Strained Si1-xGex/Si(100) Heterostructure (2008)
  • Author(s): T. Seo、M. Sakuraba, J. Murota
  • Journal Title: Appl. Surf. Sci Vol.254 Pages: 6265-6267
• [Journal Article] Very Low-Temperature Epitaxial Growth of Silicon and Germanium Using Plasma-Assisted CVD (2008)
  • Author(s): M. Sakuraba, D. Muto, M. Mori, K. Sugawara and J. Murota
  • Journal Title: Thin Solid Films Vol.517 Pages: 10-13
  • Peer Reviewed
• [Journal Article] Impact of Ge Fraction Modulation upon Electrical Characteristics of Hole Resonant Tunneling Diodes with Si/Strained Si_<1-x>Ge_x/Si(100) Heterostructure (2008)
  • Author(s): T. Seo, M. Sakuraba and J. Murota
  • Journal Title: Thin Solid Films Vol.517 Pages: 110-112
  • Peer Reviewed
• [Journal Article] Very Low-Temperature Epitaxial Growth of Silicon and Germanium Using Plasma-Assisted CVD (2008)
  • Author(s): M. Sakuraba
  • Journal Title: Thin Solid Films 517 Pages: 10-13
  • Peer Reviewed
• [Journal Article] Impact of Ge Fraction Modulation upon Electrical Characteristics of Hole Resonant Tunneling Diodes with Si/Strained Si_<1-x>Ge_x/Si(100)Heterostructure (2008)
  • Author(s): T. Seo
  • Journal Title: Thin Solid Films 517 Pages: 110-112
  • Peer Reviewed
• [Journal Article] Electrical Characteristics of Hole Resonant Tunneling Diodes with High Ge Fraction (x>0.4) Si/Strained Si_1-x Ge_x/Si (100) Heterostructure (2008)
  • Author(s): T.Seo
  • Journal Title: Appl. Surf. Sci. 254(In press)
  • Peer Reviewed
• [Journal Article] Fabrication of Hole Resonant Tunneling Diodes with Nanometer Order Heterostructures of Si/Strained Si1-xGex Epitaxially Grown on Si(100) (Invited Paper) (2007)
  • Author(s): M. Sakuraba、R. Ito、T. Seo, J. Murota
  • Journal Title: ECS Trans Vol.11 Pages: 131-139
  • Peer Reviewed
• [Journal Article] Hole tunneling properties in resonant tunneling diodes with Si/Strained Si0. 8Ge0. 2 heterostructures grown on Si(100) by low-temperature ultraclean LPCVD (2007)
  • Author(s): R. Ito, M. Sakuraba, J. Murota
  • Journal Title: Semicond. Sci. Technol Vol.22
  • Peer Reviewed
• [Journal Article] Epitaxial growth of highly strained Si on relaxed Ge/Si(100) using ECR plasma CVD without substrate heating (2007)
  • Author(s): K. Sugawara, M. Sakuraba, J. Murota
  • Journal Title: Semicond. Sci. Technol Vol.22
  • Peer Reviewed
• [Journal Article] Epitaxial Growth of Highly Strained Si on Relaxed Ge/Si(100) Using ECR Plasma CVD without Substrate Heating (2007)
  • Author(s): K. Sugawara, M. Sakuraba and J. Murota
  • Journal Title: Semicond. Sci. Technol. Vol.22, No.1
  • Peer Reviewed
• [Journal Article] Fabrication of Hole Resonant Tunneling Diodes with Nanometer Order Heterostructuresof Si/Strained Si_<1-x>Ge_x Epitaxially Grown on Si (100)(Invited Paper) (2007)
  • Author(s): M. Sakuraba
  • Journal Title: ECS Trans. 11 Pages: 131-139
  • Peer Reviewed
• [Journal Article] Hole tunneling properties in resonant tunneling diodes with Si/Strained Si_<0.8>Ge_<0.2> heterostructures grown on Si(100) by low-temperature ultraclean LPCVD (2007)
  • Author(s): R.Ito et al.
  • Journal Title: Semicond. Sci. Technol. 22
• [Journal Article] Epitaxial growth of highly strained Si on relaxed Ge/Si(100) using ECR plasma CVD without substrate heating (2007)
  • Author(s): K.Sugawara et al.
  • Journal Title: Semicond. Sci. Technol. 22
• [Journal Article] Highly Strained-Si/Relaxed-Ge Epitaxial Growth on Si(100) by ECR Plasma CVD and Evaluation of Thermal Stability (2006)
  • Author(s): K.Sugawara et al.
  • Journal Title: Abstracts of 2nd Int. Workshop on New Group IV Semiconductor Nanoelectronics (Tohoku Univ., Sendai, Japan, Oct. 2-3, 2006) Pages: 53-54
• [Journal Article] Electrical Characteristics of Hole Resonant Tunneling Diodes with High Ge Fraction Si/Strained Si_<1-x>Ge_x Heterostructures on Si(100) Grown by Low-Temperature Ultraclean LPCVD (2006)
  • Author(s): T.Seo et al.
  • Journal Title: Abstracts of 2nd Int. Workshop on New Group IV Semiconductor Nanoelectronics (Tohoku Univ., Sendai, Japan, Oct. 2-3, 2006) Pages: 77-78
• [Journal Article] Epitaxial Growth of Group IV Semiconductor in ECR Plasma Enhanced CVD (2006)
  • Author(s): M.Sakuraba et al.
  • Journal Title: Abstracts of 2nd Int. Workshop on New Group IV Semiconductor Nanoelectronics (Tohoku Univ., Sendai, Japan, Oct. 2-3, 2006) Pages: 99-100
  • NAID: 10018312379
• [Presentation] Epitaxial Growth of Group IV Semiconductor Nanostructures Using Atomically Controlled Plasma Processing (Invited Paper) (2010)
  • Author(s): M. Sakuraba、T. Nosaka、K. Sugawara, J. Murota
  • Organizer: 5th Int. Workshop on New Group IV Semiconductor Nanoelectronics
  • Place of Presentation: Sendai、Japan
• [Presentation] Mobility Enhancement by Highly Strained Si on Relaxed Ge(100) Buffer Grown by Plasma CVD (2010)
  • Author(s): K. Sugawara, M. Sakuraba, J. Murota
  • Organizer: 5th Int. Workshop on New Group IV Semiconductor Nanoelectronics
  • Place of Presentation: Sendai、Japan
• [Presentation] Atomically Controlled Plasma Processing for Epitaxial Growth of Group IV Semiconductor Nanostructures (2010)
  • Author(s): K.Sugawara
  • Organizer: 5th Int.Workshop on New Group IV Semiconductor Nanoelectronics
  • Place of Presentation: Sendai, Japan
• [Presentation] Epitaxial Growth of Group IV Semiconductor Nanostructures Using Atomically Controlled Plasma Processing (2010)
  • Author(s): M.Sakuraba
  • Organizer: 5th Int.Workshop on New Group IV Semiconductor Nanoelectronics
  • Place of Presentation: Sendai, Japan
• [Presentation] Mobility Enhancement by Highly Strained Si on Relaxed Ge(100)Buffer Grown by Plasma CVD (2010)
  • Author(s): K.Sugawara
  • Organizer: 5th Int.Workshop on New Group IV Semiconductor Nanoelectronics
  • Place of Presentation: Sendai, Japan
• [Presentation] Resonant Tunneling Diodes with Highly Strained Heterostructures of Si/Si1-xGex Epitaxially Grown on Si(100) (2009)
  • Author(s): M. Sakuraba, J. Murota
  • Organizer: 2nd French Research Organizations-Tohoku University Joint Workshop on Frontier Materials
  • Place of Presentation: Sendai、Japan
• [Presentation] Atomically Controlled Plasma Processing for Epitaxial Growth of Group IV Semiconductor Nanostructures (2009)
  • Author(s): K. Sugawara、M. Sakuraba, J. Murota
  • Organizer: 2nd French Research Organizations-Tohoku University Joint Workshop on Frontier Materials
  • Place of Presentation: Sendai、Japan
• [Presentation] Atomically Controlled Plasma Processing for Epitaxial Growth of Group IV Semiconductor Nanostructures (2009)
  • Author(s): M. Sakuraba, K. Sugawara, J. Murota
  • Organizer: Symp. E10: ULSI Process Integration 6、(216th Meeting of the Electrochem. Soc. )
  • Place of Presentation: Vienna、Austria
• [Presentation] Resonant Tunneling Diodes with Highly Strained Heterostructures of Si/Si1-xGex Epitaxially Grown on Si(100) (Invited Paper) (2009)
  • Author(s): M. Sakuraba, J. Murota
  • Organizer: 1st Int. Workshop on Si Based Nano-Electronics and -Photonics (SiNEP-09)
  • Place of Presentation: Vigo、Spain
• [Presentation] Electrical Characteristics of B-Doped Highly Strained Si Films Epitaxially Grown on Ge(100) Formed by Plasma CVD (2009)
  • Author(s): K. Sugawara、M. Sakuraba, J. Murota
  • Organizer: 6th Int. Conf. on Silicon Epitaxy and Heterostructures
  • Place of Presentation: Los Angeles、USA
• [Presentation] Heavily B Atomic-Layer Doping Characteristics in Si Epitaxial Growth on Si(100) Using Electron-Cyclotron-Resonance Ar Plasma (2009)
  • Author(s): T. Nosaka、M. Sakuraba、B. Tillack, J. Murota
  • Organizer: 6th Int. Conf. on Silicon Epitaxy and Heterostructures
  • Place of Presentation: Los Angeles、USA
• [Presentation] Electrical Characteristics of B-Doped Highly Strained Si Films Epitaxially Grown on Ge(100)Formed by Plasma CVD (2009)
  • Author(s): K.Sugawara
  • Organizer: 6th Int.Conf.on Silicon Epitaxy and Heterostructures
  • Place of Presentation: Los Angeles, USA
• [Presentation] Heavily B Atomic-Layer Doping Characteristics in Si Epitaxial Growth on Si(100)Using Electron-Cyclotron-Resonance Ar Plasma (2009)
  • Author(s): T.Nosaka
  • Organizer: 6th Int.Conf.on Silicon Epitaxy and Heterostructures
  • Place of Presentation: Los Angeles, USA
• [Presentation] Resonant Tunneling Diodes with Highly Strained Heterostructures of Si/Si_<1-x>Ge_x Epitaxially Grown on Si(100) (2009)
  • Author(s): M.Sakuraba
  • Organizer: 1st Int.Workshop on Si Based Nano-Electronics and-Photonics(SiNEP-09)
  • Place of Presentation: Vigo, Spain
• [Presentation] Atomically Controlled Plasma Processing for Epitaxial Growth of Group IV Semiconductor Nanostructures (2009)
  • Author(s): M.Sakuraba
  • Organizer: Symp.E10 : ULSI Process Integration 6(216th Meeting of the Electrochem.Soc.)
  • Place of Presentation: Vienna, Austria
• [Presentation] Resonant Tunneling Diodes with Highly Strained Heterostructures of Si/Si_<1-x>Ge_x Epitaxially Grown on Si(100) (2009)
  • Author(s): M.Sakuraba
  • Organizer: 2nd French Research Organizations-Tohoku University Joint Workshop on Frontier Materials
  • Place of Presentation: Sendai, Japan
• [Presentation] Heavily B Atomic-Layer Doping in Si Epitaxial Growth Using Electron-Cyclotron-Resonance Plasma (2008)
  • Author(s): T. Nosaka、M. Sakuraba, J. Murota
  • Organizer: Int. Union of Mat. Res. Soc. - Int. Conf. in Asia 2008 (IUMRS-ICA 2008)
  • Place of Presentation: Nagoya、Japan
• [Presentation] Epitaxial Growth of Highly Strained B Doped Si on Relaxed Ge/Si(100) (2008)
  • Author(s): K. Sugawara、M. Sakuraba, J. Murota
  • Organizer: Int. Union of Mat. Res. Soc. - Int. Conf. in Asia 2008 (IUMRS-ICA 2008)
  • Place of Presentation: Nagoya、Japan
• [Presentation] Fabrication of Hole Resonant Tunneling Diodes Utilizing Nanometer-Order Strained SiGe/Si(100) Heterostructures with High Ge Fraction (2008)
  • Author(s): M. Sakuraba、R. Ito、T. Seo, J. Murota
  • Organizer: 4th Int. Workshop on New Group IV Semiconductor Nanoelectronics
  • Place of Presentation: Sendai、Japan
• [Presentation] Application of Relaxed Ge/Si(100) by ECR Plasma CVD to Highly Strained B Doped Si (2008)
  • Author(s): K. Sugawara、M. Sakuraba, J. Murota
  • Organizer: 4th Int. Workshop on New Group IV Semiconductor Nanoelectronics
  • Place of Presentation: Sendai、Japan
• [Presentation] Epitaxial Growth of B Atomic-Layer Doped Si Film on Si(100) Using Electron-Cyclotron-Resonance Ar Plasma (2008)
  • Author(s): T. Nosaka、M. Sakuraba, J. Murota
  • Organizer: 4th Int. Workshop on New Group IV Semiconductor Nanoelectronics
  • Place of Presentation: Sendai、Japan
• [Presentation] Hole Resonant Tunneling Diodes Utilizing High Ge Fraction (x>0. 5) Si/Strained Si1-xGex/Si(100) Heterostructure with Improved Performance at Higher Temperature above 200 K (2008)
  • Author(s): K. Takahashi、T. Seo、M. Sakuraba, J. Murota
  • Organizer: 4th Int. Workshop on New Group IV Semiconductor Nanoelectronics
  • Place of Presentation: Sendai、Japan
• [Presentation] Improvement in Negative Differential Conductance Characteristics of Hole Resonant Tunneling Diodes with High Ge Fraction Si/Strained Si1-xGex/Si(100) Heterostructure (2008)
  • Author(s): T. Seo、Takahashi, M. Sakuraba, J. Murota
  • Organizer: 4th Int. SiGe Technology and Device Meeting (ISTDM2008)
  • Place of Presentation: Hsinchu, Taiwan
• [Presentation] Heavily B Atomic-Layer Doping in Si Epitaxial Growth Using Electron-Cyclotron- Resonance Plasma (2008)
  • Author(s): T. Nosaka, M. Sakuraba and J. Murota
  • Organizer: Symp. Z : "Material Science and Process Technologies for Advanced Nano-Electronic Devices", Int. Union of Mat. Res. Soc. - Int. Conf. in Asia 2008 (IUMRS-ICA 2008)
  • Place of Presentation: Nagoya, Japan, No.ZO-5
• [Presentation] Epitaxial Growth of Highly Strained B Doped Si on Relaxed Ge/Si(100) (2008)
  • Author(s): K. Sugawara, M. Sakuraba and J. Murota
  • Organizer: Symp. Z : "Material Science and Process Technologies for Advanced Nano-Electronic Devices", Int. Union of Mat. Res. Soc. - Int. Conf. in Asia 2008 (IUMRS-ICA 2008)
  • Place of Presentation: Nagoya, Japan, No. ZP-9.
• [Presentation] Improvement in Negative Differential Conductance Characteristics of Hole Resonant Tunneling Diodes with High Ge Fraction Si/Strained Si_<1-x>Ge_x/Si(100)Heterostructure (2008)
  • Author(s): T. Seo
  • Organizer: 4th Int. SiGe Technology and Device Meeting (ISTDM2008)
  • Place of Presentation: Hsinchu, Taiwan
• [Presentation] Application of Relaxed Ge/Si(100)by ECR Plasma CVD to Highly Strained B Doped Si (2008)
  • Author(s): K. Sugawara
  • Organizer: 4th Int. Workshop on New Group IV Semiconductor Nanoelectronics
  • Place of Presentation: Sendai, Japan
• [Presentation] Epitaxial Growth of B Atomic-Layer Doped Si Film on Si(100)Using Electron-Cyclotron-Resonance Ar Plasma (2008)
  • Author(s): T. Nosalca
  • Organizer: 4th Int. Workshop on New Group IV Semiconductor Nanoelectronics
  • Place of Presentation: Sendai, Japan
• [Presentation] Hole Resonant Tunneling Diodes Utilizing High Ge Fraction (x>0.5)Si/Strained Si_<1-x>_Ge_x/Si(100)Heterostructure with Improved Performance at Higher Temperatureabove 200 K (2008)
  • Author(s): K. Takahashi
  • Organizer: 4th Int. Workshop on New Group IV Semiconductor Nanoelectronics
  • Place of Presentation: Sendai, Japan
• [Presentation] Fabrication of Hole Resonant Tunneling Diodes Utilizing Nanometer-Order Strained SiGe/Si(100)Heterostructures with High Ge Fraction (2008)
  • Author(s): M. Sakuraba
  • Organizer: 4th Int. Workshop on New Group IV Semiconductor Nanoelectronics
  • Place of Presentation: Sendai, Japan
• [Presentation] Heavily B Atomic-Layer Doping in Si Epitaxial Growth Using Electron-Cyclotron-Resonance Plasma (2008)
  • Author(s): T. Nosaka
  • Organizer: Int. Union of Mat. Res. Soc. -Int. Conf. in Asia 2008 (IUMRS-ICA 2008)
  • Place of Presentation: Nagoya, Japan
• [Presentation] Epitaxial Growth of Highly Strained B Doped Si on Relaxed Ge/Si(100) (2008)
  • Author(s): K. Sugawara
  • Organizer: Int. Union of Mat. Res. Soc. -Int. Conf. in Asia 2008 (IUMRS-ICA 2008)
  • Place of Presentation: Nagoya, Japan
• [Presentation] Electrical Characteristics of Hole Resonant Tunneling Diodes with High Ge Fraction (x>0. 4) Si/Strained Si1-xGex/Si(100) Heterostructure (2007)
  • Author(s): T. Seo、M. Sakuraba, J. Murota
  • Organizer: 5th Int. Symp. Control of Semiconductor Interfaces (ISCSI-V)
  • Place of Presentation: Hachioji, Japan
• [Presentation] Characterization of Temperature-Dependent Hole Resonant Tunneling Properties with High Ge Fraction (x>0. 4) Si/Strained Si1-xGex/Si(100) Heterostructure (2007)
  • Author(s): T. Seo、M. Sakuraba, J. Murota
  • Organizer: 3rd Int. Workshop on New Group IV Semiconductor Nanoelectronics
  • Place of Presentation: Sendai、Japan
• [Presentation] Fabrication of Hole Resonant Tunneling Diodes with Nanometer Order Heterostructures of Si/Strained Si1-xGex Epitaxially Grown on Si(100) (Invited Paper) (2007)
  • Author(s): M. Sakuraba、R. Ito、T. Seo, J. Murota
  • Organizer: Symp. E9: ULSI Process Integration 5 (212th Meeting of the Electrochem. Soc. )
  • Place of Presentation: Washington, DC、USA
• [Presentation] Very Low-Temperature Epitaxial Growth of Silicon and Germanium Using Plasma-Assisted CVD (Invited Paper) (2007)
  • Author(s): M. Sakuraba、D. Muto、M. Mori、K. Sugawara、J. Murota
  • Organizer: 5th Int. Conf. Silicon Epitaxy and Heterostructures (ICSI-5)
  • Place of Presentation: Marseille、France
• [Presentation] Impact of Ge Fraction Modulation upon Electrical Characteristics of Hole Resonant Tunneling Diodes with Si/Strained Si1-xGex/Si(100) Heterostructure (2007)
  • Author(s): T. Seo、M. Sakuraba, J. Murota
  • Organizer: 5th Int. Conf. Silicon Epitaxy and Heterostructures (ICSI-5)
  • Place of Presentation: Marseille, France
• [Presentation] Fabrication of Hole Resonant Tunneling Diodes with Nanometer Order Heterostructures of Si/Strained Si_<1-x>Ge_x Epitaxially Grown on Si(100) (2007)
  • Author(s): M. Sakuraba, R. Ito, T. Seo, and J. Murota
  • Organizer: Symp. E9 : ULSI Process Integration 5 (212th Meeting of the Electrochem. Soc.)
  • Place of Presentation: Washington, DC, USA, Abst.No.1283.
• [Presentation] Very Low-Temperature Epitaxial Growth of Silicon and Germanium Using Plasma-Assisted CVD (2007)
  • Author(s): M. Sakuraba, D. Muto, M. Mori, K. Sugawara and J. Murota
  • Organizer: 5th Int. Conf. Silicon Epitaxy and Heterostructures (ICSI-5)
  • Place of Presentation: Marseille, France, No.S1-I3.
• [Presentation] Very Low-Temperature Epitaxial Growth of Silicon and Germanium Using Plasma-Assisted CVD (Invited Paper) (2007)
  • Author(s): M. Sakuraba
  • Organizer: 5th Int. Conf. Silicon Epitaxy and Heterostructures (ICSI-5)
  • Place of Presentation: Marseille, France
• [Presentation] Impact of Ge Fraction Modulation upon Electrical Characteristics of Hole Resonant Tunneling Diodes with Si/Strained Si_<1-x> Ge_x/Si (100) Heterostructure (2007)
  • Author(s): T. Seo
  • Organizer: 5th Int. Conf. Silicon Epitaxy and Heterostructures (ICSI-5)
  • Place of Presentation: Marseille, France
• [Presentation] Fabrication of Hole Resonant Tunneling Diodes with Nanometer Order Heterostructures of Si/Strained Si_<1-x> Ge_x Epitaxially Grown on Si (100) (Invited Paper) (2007)
  • Author(s): M. Sakuraba
  • Organizer: Symp. E9: ULSI Process Integration 5 (212th Meeting of the Electrochem. Soc.)
  • Place of Presentation: Washington, DC, USA
• [Presentation] Characterization of Temperature-Dependent Hole Resonant Tunneling Properties with High Ge Fraction (x>0.4) Si/Strained Si_<1-x> Ge_x/Si (100) Heterostructure (2007)
  • Author(s): T. Seo
  • Organizer: 3rd Int. Workshop on New Group IV Semiconductor Nanoelectronics
  • Place of Presentation: Sendai, Japan
• [Presentation] Electrical Characteristics of Hole Resonant Tunneling Diodes with High Ge Fraction (x>0.4) Si/Strained Si_<1-x> Ge_x/Si (100) Heterostructure (2007)
  • Author(s): T. Seo
  • Organizer: 5th Int. Symp. Control of Semiconductor Interfaces (ISCSI-V)
  • Place of Presentation: Hachioji, Japan
• [Presentation] Highly Strained-Si/Relaxed-Ge Epitaxial Growth on Si(100) by ECR Plasma CVD and Evaluation of Thermal Stability (2006)
  • Author(s): K. Sugawara、M. Sakuraba, J. Murota
  • Organizer: Abstracts of 2nd Int. Workshop on New Group IV Semiconductor Nanoelectronics
  • Place of Presentation: Sendai、Japan
• [Presentation] Electrical Characteristics of Hole Resonant Tunneling Diodes with High Ge Fraction Si/Strained Si1-xGex Heterostructures on Si(100) Grown by Low-Temperature Ultraclean LPCVD (2006)
  • Author(s): T. Seo、M. Sakuraba, J. Murota
  • Organizer: Abstracts of 2nd Int. Workshop on New Group IV Semiconductor Nanoelectronics
  • Place of Presentation: Sendai、Japan
• [Presentation] Epitaxial Growth of Group IV Semiconductor in ECR Plasma Enhanced CVD (2006)
  • Author(s): M. Sakuraba、D. Muto、M. Mori、K. Sugawara、J. Murota
  • Organizer: Abstracts of 2nd Int. Workshop on New Group IV Semiconductor Nanoelectronics
  • Place of Presentation: Sendai、Japan
• [Remarks] 所属特定領域「ポストスケール」のウェッブサイト(領域番号458)
  • URL: http://alice.xtal.nagoya-u.ac.jp/post_scaling/