• Search Research Projects
  • Search Researchers
  • How to Use
  1. Back to previous page

Theoretical Design of Nano-Device and Nano-Interface by First Principles Approach

Research Project

Project/Area Number 18063003
Research Category

Grant-in-Aid for Scientific Research on Priority Areas

Allocation TypeSingle-year Grants
Review Section Science and Engineering
Research InstitutionUniversity of Tsukuba

Principal Investigator

SHIRAISHI Kenji  University of Tsukuba, 大学院・数理物質科学研究科, 教授 (20334039)

Co-Investigator(Kenkyū-buntansha) OSHIYAMA Atsushi  東京大学, 工学系研究科, 教授 (80143361)
MURAGUCHI Masakazu  東北大学, 学際科学国際高等研究センター, 教育研究補助者 (90386623)
OKADA Susumu  筑波大学, 大学院・数理物質科学研究科, 准教授 (70302388)
YAMAUCHI Jun  慶応義塾大学, 理工学部, 講師 (90383984)
NAKAYAMA Takashi  千葉大学, 理学部, 教授 (70189075)
BOERO Mauro  筑波大学, 大学院・数理物質科学研究科, 准教授 (40361315)
NOMURA Shintaro  筑波大学, 大学院・数理物質科学研究科, 准教授 (90271527)
BERBER Savas  筑波大学, 大学院数理物質科学研究科, 助手 (90375402)
Co-Investigator(Renkei-kenkyūsha) ENDOH Tetsuo  東北大学, 学際科学国際高等研究センター, 教授 (00271990)
Project Period (FY) 2006 – 2009
Project Status Completed (Fiscal Year 2009)
Budget Amount *help
¥50,600,000 (Direct Cost: ¥50,600,000)
Fiscal Year 2009: ¥13,400,000 (Direct Cost: ¥13,400,000)
Fiscal Year 2008: ¥13,400,000 (Direct Cost: ¥13,400,000)
Fiscal Year 2007: ¥11,900,000 (Direct Cost: ¥11,900,000)
Fiscal Year 2006: ¥11,900,000 (Direct Cost: ¥11,900,000)
Keywords第一原理計算 / 理論 / ナノ界面 / 新材料 / ナノサイエンス / 界面 / 半導体デバイス / ナノ物性 / 半導体 / MOSトランジスタ / 量子効果 / 炭素ナノチューブ
Research Abstract

In this four years project, we have obtained many important results which lead a breakthrough of nano-technologies. The primary results are as follows. (1) Proposal of new physics between different dimensional systems. (2) Guiding principles for MONOS memories with high program/erase endurance, (3) Band structure design of graphene based materials. (4) Clarification of nano-scale capacitances. (5) Theoretical proposal of breakdown of Schottky barrier limits. (6) Anomaly of effective masses in Si nano-structures. (7) Serious effect of atomic vacancies for strained Ge channels.

Report

(6 results)
  • 2009 Annual Research Report   Final Research Report ( PDF )
  • 2008 Annual Research Report   Self-evaluation Report ( PDF )
  • 2007 Annual Research Report
  • 2006 Annual Research Report
  • Research Products

    (117 results)

All 2010 2009 2008 2007 2006 Other

All Journal Article (63 results) (of which Peer Reviewed: 49 results) Presentation (53 results) Remarks (1 results)

  • [Journal Article]2010

    • Author(s)
      Y. Sakurai, J-I Iwata, M. Muraguchi, Y. Shigeta, Y. Takada, S. Nomura, T. Endoh, S. Saito, K. Shiraishi, M. Ikeda, K. Makihara, S. Miyazaki
    • Journal Title

      Jpn. J. Appl. Phys. 45

      Pages: 14001-14001

    • Related Report
      2009 Final Research Report
    • Peer Reviewed
  • [Journal Article] A massively-parallel electronic-structure calculations based on real-space density functional theory2010

    • Author(s)
      J-I, Iwata, D. Takahashi, A. Oshiyama, T. Boku, K. Shiraishi, S. Okada, K. Yabana
    • Journal Title

      J. Comp. Phys. 229

      Pages: 2339-2363

    • Related Report
      2009 Final Research Report
    • Peer Reviewed
  • [Journal Article] A massively-parallel electronic-structure calculations based on real-space density functional theory2010

    • Author(s)
      J-I, Iwata
    • Journal Title

      J.Comp.Phys 96

      Pages: 2339-2363

    • Related Report
      2009 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Anomalous temperature dependence of electron tunneling between a two-dimensional electron gas and Si dots2010

    • Author(s)
      Y.Sakurai
    • Journal Title

      Physica E 42

      Pages: 918-921

    • Related Report
      2009 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Temperature Dependence of Electron Tunneling between Two Dimensional Electron Gas and Si Quantum Dots2010

    • Author(s)
      Y.Sakurai
    • Journal Title

      Jpn.J.Appl.Phys 49

    • Related Report
      2009 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Theoretical studies on the charge trap mechanism of MONOS type memories - Relationship between atomistic information and program/erase actions2009

    • Author(s)
      A. Otake, K. Yamaguchi, K. Kobayashi, K. Shiraishi
    • Journal Title

      Microelectronic. Eng. 86

      Pages: 1849-1851

    • Related Report
      2009 Final Research Report
    • Peer Reviewed
  • [Journal Article] Significant Change in Electronic Structures of Heme Upon Reduction by Strong Coulomb Repulsion between Fe d Electrons2009

    • Author(s)
      K. Kamiya, S. Yamamoto, K. Shiraishi, A. Oshiyama
    • Journal Title

      J. Phys. Chem. B 113

      Pages: 6866-6872

    • Related Report
      2009 Final Research Report
    • Peer Reviewed
  • [Journal Article] Transient current behavior through molecular bridge systems; effects of intra-molecule current on quantum relaxation and oscillation2009

    • Author(s)
      Y. Tomita, T. Nakayama, H. Ishii
    • Journal Title

      e-J. Surf. Sci. Nanotech. 7

      Pages: 606-616

    • NAID

      130004439158

    • Related Report
      2009 Final Research Report
    • Peer Reviewed
  • [Journal Article] Stability and Schottky barrier of silicides: First-principles study2009

    • Author(s)
      T. Nakayama, S. Sotome, S. Shinji
    • Journal Title

      Microelectronic Eng. 86

      Pages: 1718-1721

    • Related Report
      2009 Final Research Report
    • Peer Reviewed
  • [Journal Article] Atomistic origin of high-quality "novel SiON" gate dielectric2009

    • Author(s)
      K.Yamaguchi
    • Journal Title

      MICROELECTRONIC ENGINEERING 86

      Pages: 1680-1682

    • Related Report
      2009 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Stability of Si impurity in high-kappa oxides2009

    • Author(s)
      N.Umezawa
    • Journal Title

      MICROELECTRONIC ENGINEERING 86

      Pages: 1780-1781

    • Related Report
      2009 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Theoretical studies on the charge trap mechanism of MONOS type memories-Relationship between atomistic information and program/erase actions2009

    • Author(s)
      A.Otake
    • Journal Title

      MICROELECTRONIC ENGINEERING 86

      Pages: 1849-1851

    • Related Report
      2009 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Significant Change in Electronic Structures of Heme Upon Reduction by Strong Coulomb Repulsion between Fe d Electrons2009

    • Author(s)
      K.Kamiya
    • Journal Title

      JOURNAL OF PHYSICAL CHEMISTRY B 113

      Pages: 6866-6872

    • Related Report
      2009 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Effective-Work-Function Control by Varying the TiN Thickness in Poly-Si/TiN Gate Electrodes for Scaled High-k CMOSFETs2009

    • Author(s)
      M.Kadoshima
    • Journal Title

      IEEE ELECTRON DEVICE LETTERS 30

      Pages: 466-468

    • Related Report
      2009 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Theoretical study of the time-dependent phenomenon of photon-assisted tunneling through a charged quantum dot2009

    • Author(s)
      M.Muraguchi
    • Journal Title

      JOURNAL OF PHYSICS-CONDENSED MATTER 21

    • Related Report
      2009 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Transient current behavior through molecular bridge systems ; effects of intra-molecule current on quantum relaxation and oscillation2009

    • Author(s)
      Y.Tomita
    • Journal Title

      e-J.Surf.Sci.Nanotech 7

      Pages: 606-616

    • Related Report
      2009 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Stability and Schottky barrier of silicides : First-principles study2009

    • Author(s)
      T.Nakayama
    • Journal Title

      Microelectronic Eng 86

      Pages: 1718-1721

    • Related Report
      2009 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Electronic Properties of Graphite with Rotational Stacking Arrangement2009

    • Author(s)
      S.Okada
    • Journal Title

      Jpn.J.Appl.Phys 48

    • NAID

      40016585485

    • Related Report
      2009 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Temperature dependence of capacitance of Si quantum dot floating gate MOS capacitor2009

    • Author(s)
      櫻井蓉子
    • Journal Title

      Journal of Physics, Conference Series (印刷中)

    • Related Report
      2008 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Theoretical Studies of Coupled Quantum Dot System with a Two-dimensional Electron Gas in the Magnetic Fields2009

    • Author(s)
      高田幸宏
    • Journal Title

      Journal of Physics, Conference Series (印刷中)

    • Related Report
      2008 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Theoretical Study on Time Dependent Phenomena of Photon-Assisted Tunneling through Charged Quantum Dot2009

    • Author(s)
      村口正和
    • Journal Title

      Journal of Physics C (印刷中)

    • Related Report
      2008 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Effective Mass Anomalies in Strained Si Thin Films and Crystals2008

    • Author(s)
      J. Yamauchi
    • Journal Title

      IEEE ELECTRON DEVICE LETTERS 29

      Pages: 186-188

    • Related Report
      2009 Final Research Report
    • Peer Reviewed
  • [Journal Article] Quantum cascade multi-electron injection into Si-quantum-dot floating gates embedded in SiO2 matrices2008

    • Author(s)
      Y. Takada, M. Muraguchi, K. Shiraishi
    • Journal Title

      Appl. Surf. Sci. 254

      Pages: 6199-6202

    • Related Report
      2009 Final Research Report
    • Peer Reviewed
  • [Journal Article] Theoretical study of the time-dependent phenomena on a two-dimensional electron gas weakly coupled with a discrete level2008

    • Author(s)
      M. Muraguchi, Y. Takada, S. Nomura, K. Shiraishi
    • Journal Title

      Jpn. J. Appl. Phys. 47

      Pages: 7807-7811

    • NAID

      120007131216

    • Related Report
      2009 Final Research Report
    • Peer Reviewed
  • [Journal Article] Energetics of nanoscale graphene ribbons: Edge geometries and electronic structures2008

    • Author(s)
      S. Okada
    • Journal Title

      Phys. Rev. B 77

    • Related Report
      2009 Final Research Report
    • Peer Reviewed
  • [Journal Article] Energetics of Carbon Peapods; Radial deformation of nanotubes and aggregation of encapsulated C602008

    • Author(s)
      S. Okada
    • Journal Title

      Phys. Rev. B 77

      Pages: 235419-235419

    • Related Report
      2009 Final Research Report
    • Peer Reviewed
  • [Journal Article] Quantum cascade multi-electron injection into Si-quantum-dot floating gatesembedded in SiO_2 matrices2008

    • Author(s)
      高田幸宏
    • Journal Title

      Applied Surface Science 254

      Pages: 6199-6202

    • Related Report
      2008 Annual Research Report
    • Peer Reviewed
  • [Journal Article] シリコンナノ構造の第一原理計算 : 有効質量異常の発現2008

    • Author(s)
      山内淳
    • Journal Title

      固体物理 43

      Pages: 289-296

    • NAID

      40016099914

    • Related Report
      2008 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Theoretical study of the time-dependent phenomena on a two-dimensional electron zas weakly counled with a discrete level2008

    • Author(s)
      村口正和
    • Journal Title

      Japanese Jourfial of Applied Physics 47

      Pages: 7807-7811

    • Related Report
      2008 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Energetics of nanoscale graphene ribbons : Edge geometries and electronic structures2008

    • Author(s)
      岡田晋
    • Journal Title

      Physical Review B 77, Art. No.041408

    • Related Report
      2008 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Energetics of Carbon Peapods ; Radial deformation of nanotubes and aggregation of encapsulated C_<60>2008

    • Author(s)
      岡田晋
    • Journal Title

      Physicil Review B 77, Art. No.235419

    • Related Report
      2008 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Ge vacancies at Ge/Si interfaces: Stress-enhanced pairing dist ortion2008

    • Author(s)
      K., Takai・K., Shiraishi・A., Oshiyama
    • Journal Title

      PHYSICAL REVIEW B 77

    • Related Report
      2007 Annual Research Report
    • Peer Reviewed
  • [Journal Article] 金属/絶縁体界面の物理:ショットキーバリアと原子間混晶化2007

    • Author(s)
      中山隆史、白石賢二
    • Journal Title

      表面科学 28

      Pages: 28-33

    • Related Report
      2009 Final Research Report
    • Peer Reviewed
  • [Journal Article] Quantum effects in a double-walled carbon nanotube capacitor2007

    • Author(s)
      K. Uchida, S. Okada, K. Shiraishi, A. Oshiyama
    • Journal Title

      PHYSICAL REVIEW B 76(15)

      Pages: 155436-155436

    • NAID

      120007139048

    • Related Report
      2009 Final Research Report
    • Peer Reviewed
  • [Journal Article] Effective-Mass Anormalies of Strained Silicon Thin Films: Surface and Confinement Effects2007

    • Author(s)
      J. Yamauchi, S. Matsuno
    • Journal Title

      JAPANEASE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIER COMMUNICATIONS & REVIEW PAPERS 46

      Pages: 3273-3276

    • Related Report
      2009 Final Research Report
    • Peer Reviewed
  • [Journal Article] Quantum effects in a double-walled carbon nanotube capacitor2007

    • Author(s)
      K. Uchida, S. Okada, K. Shiraishi, and A. Oshiyama
    • Journal Title

      PHYSICAL REVIEW B 76 (15) : Art. No. 155436

    • NAID

      120007139048

    • Related Report
      2008 Self-evaluation Report
  • [Journal Article] Suppression of oxygen vacancy formation in Hf-based high-k dielectrics by lanthanum incorporation2007

    • Author(s)
      N, Umezawa, K, Shiraishi, et al
    • Journal Title

      APPLIED PHYSICS LETTERS 91 (13) : Art. No. 132904

    • Related Report
      2008 Self-evaluation Report
  • [Journal Article] Quantum effects in a cylindrical carbon-nanotube capacitor2007

    • Author(s)
      K. Uchida, S. Okada, K. Shiraishi, and A. Oshiyama
    • Journal Title

      OURNAL OF PHYSICS-CONDENSED MATTER 19 (36) : Art. No. 365218

    • Related Report
      2008 Self-evaluation Report
  • [Journal Article] Quantum effects in a double-walled carbon nanotube capacitor2007

    • Author(s)
      K., Uchida・S., Okada・K., Shiraishi・A., Oshiyama
    • Journal Title

      PHYSICAL REVIEW B 76

    • NAID

      120007139048

    • Related Report
      2007 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Suppression of oxygen vacancy formation in Hf-based high-k dielectrics by lanthanum incorporation2007

    • Author(s)
      N., Umezawa・K., Shiraishi・S., Sugino, et. al.
    • Journal Title

      APPLIED PHYSICS LETTERS 91

    • Related Report
      2007 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Quantum effects in a cylindrical carbon-nanotube capacito2007

    • Author(s)
      K., Uchida・S., Okada・K., Shiraishi・A., Oshiyama
    • Journal Title

      JOURNAL OF PHYSICS-CONDENSED MATTER 19

    • Related Report
      2007 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Hafnium 4f core-level shifts caused by nitrogen incorporation in Hf-based high-k gate dielectrics2007

    • Author(s)
      N., Umezawa・K., Shiraishi・S., Miyazaki, et. al.
    • Journal Title

      JAPANEST JOURNAL OF APPLIED PHYSICS PART 1 46

      Pages: 3507-3509

    • NAID

      40015421738

    • Related Report
      2007 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Guiding principle of energy level controllability of silicon dangling bonds in HfSiON2007

    • Author(s)
      N., Umezawa・K., Shiraishi・S., Miyazaki, et. al.
    • Journal Title

      JAPANEST JOURNAL OF APPLIED PHYSICS PART 1 46

      Pages: 1891-1894

    • Related Report
      2007 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Physical origin of stress-induced leakage currents in ultra-thin silicon dioxide films2007

    • Author(s)
      T., ・Endoh・K., Hirose・K., Shiraishi
    • Journal Title

      IEICE TRANSACTIONS ON ELECTRONICS E90C

      Pages: 955-961

    • NAID

      10018216417

    • Related Report
      2007 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Role of nitrogen atoms in reduction of electron charge traps in Hf-based high-k dielectrics2007

    • Author(s)
      N., Umezawa・K., Shiraishi・K., Torii, et. al.
    • Journal Title

      IEEE ELECTRON DEVICE LETTERS 28

      Pages: 363-365

    • Related Report
      2007 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Effective-Mass Anormalies of Strained Silicon Thin Films:Surface and Confinement Effects2007

    • Author(s)
      J., Yamauchi・S., Matsuno
    • Journal Title

      JAPANESE JOURNAL OF APPLIED PHYSICS PART 1 46

      Pages: 3273-3276

    • Related Report
      2007 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Effective-Mass Anormalies in Strained Si Thin Films and Crystals2007

    • Author(s)
      J., Yamauchi
    • Journal Title

      IEEE ELECTRON DEVICE LETTERS; 29

      Pages: 186-1886

    • Related Report
      2007 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Orientation Dependence of Magnetic Moment of Carbon Nanotubes with Topological Line Defects2007

    • Author(s)
      S.Okada, K.Nakada, T.Kawai
    • Journal Title

      Appl.Phys.Lett. 90

    • Related Report
      2006 Annual Research Report
  • [Journal Article] Radial-Breathing Mode Frequencies for Nanotubes Encapsulating Fullerenes2007

    • Author(s)
      S.Okada
    • Journal Title

      Chem.Phys.Lett. 438

      Pages: 59-59

    • Related Report
      2006 Annual Research Report
  • [Journal Article] Effect of Encapsulated Atoms on the Electronic Structure of the Fullerene cage : A Case Study on La_2@C_<78> and Ti_2C_2@C_<78> via Ultraviolet Photoelectron Spectroscopy2007

    • Author(s)
      S.Hino, M.Kato, D.Yoshimura, H.Moribe, H.Umemoto, Y.Ito, T.Sugai, H.Shinohara, M.Otani, Y.Yoshimoto, S.Okada
    • Journal Title

      Phys.Rev.B 75

    • Related Report
      2006 Annual Research Report
  • [Journal Article] Modified Oxygen Vacancy Induced Fermi Level Pinning Model Extendable to P-Metal Pinning2006

    • Author(s)
      Y. Akasaka, G. Nakamura, K. Shiraishi, N. Umezawa, K. Yamabe, O. Ogawa, M. Lee, T. Amiaka, T. Kasuya, H. Watanabe, T. Chikyow, F. Ootsuka, Y. Nara, K. Nakamura
    • Journal Title

      Jpn. J. Appl. Phys. 45

    • NAID

      10018461127

    • Related Report
      2009 Final Research Report
    • Peer Reviewed
  • [Journal Article] Oxygen-vacancy-induced threshold voltage shifts in Hf-related high-k gate stacks2006

    • Author(s)
      K. Shiraishi, K. Yamada, K. Torii, Y. Akasaka, K. Nakajima, M. Konno, T. Chikyow, H. Kitajima, T. Arikado, Y. Nara
    • Journal Title

      Thin Solid Films 508

      Pages: 305-310

    • Related Report
      2009 Final Research Report
    • Peer Reviewed
  • [Journal Article] Ferromagnetic Spin Ordering on Carbon Nanotubes with Topological Line Defects2006

    • Author(s)
      S. Okada, K. Nakada, K. Kuwabara, K. Daigoku, T. Kawai
    • Journal Title

      Phys. Rev. B 74

      Pages: 121412-121412

    • Related Report
      2009 Final Research Report
    • Peer Reviewed
  • [Journal Article] Nano-scale view of atom intermixing at metal/semiconductor interfaces2006

    • Author(s)
      T. Nakayama, S. Itaya, D. Murayama
    • Journal Title

      J. Phys. Conf. Ser. 38

      Pages: 216-219

    • Related Report
      2009 Final Research Report
    • Peer Reviewed
  • [Journal Article] Thermal annihilation process of stacking-fault tetrahedron defect in Si-film epitaxy2006

    • Author(s)
      R. Kobayashi, T. Nakayama
    • Journal Title

      Thin Solid Films 508

      Pages: 29-32

    • Related Report
      2009 Final Research Report
    • Peer Reviewed
  • [Journal Article] Ferromagnetic Spin Ordering on Carbon Nanotubes with Topological Line Defects2006

    • Author(s)
      S.Okada, K.Nakada, K.Kuwabara, K.Daigoku, T.Kawai
    • Journal Title

      Phys.Rev.B 74

    • Related Report
      2006 Annual Research Report
  • [Journal Article] Modified Oxygen Vacancy Induced Fermi Level Pinning Model Extendable to P-Metal Pinning2006

    • Author(s)
      Y.Akasaka, G.Nakamura, K.Shiraishi, N.Umezawa, K.Yamabe, O.Ogawa, M.Lee, T.Amiaka, T.Kasuya, H.Watanabe, T.Chikyow, F.Ootsuka, Y.Nara, K.Nakamura
    • Journal Title

      Jpn.J.Appl.Phys.Part 2 45

    • NAID

      10018461127

    • Related Report
      2006 Annual Research Report
  • [Journal Article] Introduction of defects into HfO_2 gate dielectrics by metal-gate deposition studied using x-ray photoelectron spectroscopy and positron annihilation2006

    • Author(s)
      A.Uedono, T.Naito, T.Otsuka, K.Shiraishi, K.Yamabe, S.Miyazaki, H.Watanabe, N.Umezawa, T.Chikyow, Y.Akasaka, S.Kamiyama, Y.Nara, Yamada
    • Journal Title

      J.Appl.Phys. 100

    • Related Report
      2006 Annual Research Report
  • [Journal Article] Oxygen-Vacancy-Induced Threshold Voltage Shifts in Hf-Related High-k Gate Stacks2006

    • Author(s)
      K.Shiraishi, K.Yamada, K.Torii, Y.Akasaka, K.Nakajima, M.Konno, T.Chikyow, H.Kitajima, T.Arikado, Y.Nara
    • Journal Title

      Thin Solid Films 508

      Pages: 305-305

    • Related Report
      2006 Annual Research Report
  • [Journal Article] New Theory of Effective Work Functions at Metal/High-k Dielectric Interfaces-Application to Metal/High-k HfO_2 And La_2O_3 Dielectric Interfaces-2006

    • Author(s)
      K.Shiraishi, T.Nakayama, Y.Akasaka, S.Miyazaki, T.Nakaoka, K.Ohmori, P.Ahmet, K.Torii, H.Watanabe, T.Chikyow, Y.Nara, H.Iwai, K.Yamada
    • Journal Title

      ECS Transactions 2(1)

      Pages: 25-25

    • Related Report
      2006 Annual Research Report
  • [Journal Article] A Novel Remote Reactive Sink Layer Technique for the Control of N and O Concentrations in Metal/High-k Gate Stacks2006

    • Author(s)
      Y.Akasaka, K.Shiraishi, N.Umezawa, O.Ogawa, T.Kasuya, T.Chikyow, F.Ootsuka, Y.Nara, K.Nakamura
    • Journal Title

      Technical Digest of 2006 Symposium on VLSI Tech.(Honolulu, USA)

      Pages: 206-206

    • Related Report
      2006 Annual Research Report
  • [Journal Article] Nano-scale view of atom intermixing at metal/semiconductor interfaces2006

    • Author(s)
      T.Nakayama, S.Itaya, D.Murayama
    • Journal Title

      J.Phys.Conf.Ser. 38

      Pages: 216-216

    • Related Report
      2006 Annual Research Report
  • [Journal Article] Thermal annihilation process of stacking-fault tetrahedron defect in Si-film epitaxy2006

    • Author(s)
      R.Kobayashi, T.Nakayama
    • Journal Title

      Thin Solid Films 508

      Pages: 29-29

    • Related Report
      2006 Annual Research Report
  • [Presentation] MONOS型メモリにおけるSiN層のN空孔型欠陥の原子構造と電子構造2009

    • Author(s)
      山口慶太
    • Organizer
      2009年春季第56回応用物理学関係連合講演会
    • Place of Presentation
      筑波大学
    • Year and Date
      2009-03-31
    • Related Report
      2008 Annual Research Report
  • [Presentation] MONOS型メモリにおけるSiN層への0混入の効果の理論的検討2009

    • Author(s)
      大竹朗
    • Organizer
      2009年春季第56回応用物理学関係連合講演会
    • Place of Presentation
      筑波大学
    • Year and Date
      2009-03-31
    • Related Report
      2008 Annual Research Report
  • [Presentation] 電子ガスー量子ドット結合系における電子構造II2009

    • Author(s)
      高田幸宏
    • Organizer
      日本物理学会第64回年次大会
    • Place of Presentation
      立教大学
    • Year and Date
      2009-03-30
    • Related Report
      2008 Annual Research Report
  • [Presentation] 電子ガスー量子ドット結合系におけるC-V特性およびI-V特性のSweep Rate依存性2009

    • Author(s)
      櫻井蓉子
    • Organizer
      日本物理学会第64回年次大会
    • Place of Presentation
      立教大学
    • Year and Date
      2009-03-30
    • Related Report
      2008 Annual Research Report
  • [Presentation] 電子ガス-量子ドット結合系における電子ダイナミクスII2009

    • Author(s)
      村口正和
    • Organizer
      日本物理学会第64回年次大会
    • Place of Presentation
      立教大学
    • Year and Date
      2009-03-30
    • Related Report
      2008 Annual Research Report
  • [Presentation] MONOS型メモリの電荷蓄積機構の第一原理計算による考察2009

    • Author(s)
      大竹朗
    • Organizer
      第14回ゲートスタック研究会
    • Place of Presentation
      東レ三島研修センター
    • Year and Date
      2009-01-24
    • Related Report
      2008 Annual Research Report
  • [Presentation] Physics for Si nanowire FET and its fabrication2009

    • Author(s)
      K. Shiraishi
    • Organizer
      PICE International Symposium on Silicon Nano Devices in 2030: Prospects by World's Leading Scientists
    • Place of Presentation
      Tokyo, Japan.
    • Related Report
      2009 Final Research Report
  • [Presentation] Physics of Nano-Interfaces and Nano-Structures for Future Si Nano-Devices2009

    • Author(s)
      K. Shiraishi
    • Organizer
      216th Meeting of Electrochemical Society
    • Place of Presentation
      Vienna, Austria
    • Related Report
      2009 Final Research Report
  • [Presentation] Physics of Nano-contact between Si Quantum Dots and Inversion Layer2009

    • Author(s)
      S. Nomura, Y. Sakurai, Y. Takada, K. Shiraishi, M. Muraguchi, T. Endoh, M. Ikeda, K. Makihara, S. Miyazaki
    • Organizer
      216th Meeting of Electrochemical Society
    • Place of Presentation
      Vienna, Austria
    • Related Report
      2009 Final Research Report
  • [Presentation] Physics of Nano-Interfaces and Nano-Structures for Future Si Nano-Devices2009

    • Author(s)
      K. Shiraishi
    • Organizer
      10th I10th International Conference on Atomically Cotrolled Surfaces, Interfaces and Nanostructures
    • Place of Presentation
      Granada, Spain
    • Related Report
      2009 Final Research Report
  • [Presentation] Theoretical models for work function control2009

    • Author(s)
      K. Shiraishi
    • Organizer
      16th biannual conference of Insulating Films on Semiconductors
    • Place of Presentation
      Cambridge, UK
    • Related Report
      2009 Final Research Report
  • [Presentation] Guiding Principles toward Future Gate Stacks Given by the Construction of New Physical Concepts2009

    • Author(s)
      K. Shiraishi
    • Organizer
      2009 Symposium on VLSI Technologies
    • Place of Presentation
      Kyoto, Japan
    • Related Report
      2009 Final Research Report
  • [Presentation] Universal Guiding Principles for Charge-Trap Memories with High Program/Erase Cycle Endurance2009

    • Author(s)
      K. Yamaguchi, A. Otake, K. Kobayashi, K. Shiraishi
    • Organizer
      2009 IEEE Electron Devices Meeting
    • Place of Presentation
      Baltimore, USA
    • Related Report
      2009 Annual Research Report 2009 Final Research Report
  • [Presentation] Atomistic Studies for MONOS-Type Charge Trap Memories -A Theoretical Guiding Principles for High Program/Erase Endurance-2009

    • Author(s)
      K. Shiraishi, K. Yamaguchi, A. Otake, K. Kobayashi
    • Organizer
      The 15th International Workshop on the Physics of Semiconductor Devices
    • Place of Presentation
      New Delhi, India
    • Related Report
      2009 Final Research Report
  • [Presentation] Physics for Si nanowire FET and its fabrication2009

    • Author(s)
      白石賢二
    • Organizer
      PICE International Symposium on Silicon Nano Devices in 2030 : Prospects by World's Leading Scientists
    • Place of Presentation
      東京
    • Related Report
      2009 Annual Research Report
  • [Presentation] Physics of Nano-Interfaces and Nano-Structures for Future Si Nano-Devices2009

    • Author(s)
      白石賢二
    • Organizer
      216^<th> Meeting of Electrochemical Society
    • Place of Presentation
      Vienna, Austria
    • Related Report
      2009 Annual Research Report
  • [Presentation] Physics of Nano-contact between Si Quantum Dots and Inversion Layer2009

    • Author(s)
      S.Nomura
    • Organizer
      216^<th> Meeting of Electrochemical Society
    • Place of Presentation
      Vienna, Austria
    • Related Report
      2009 Annual Research Report
  • [Presentation] Physics of Nano-Interfaces and Nano-Structures for Future Si Nano-Devices2009

    • Author(s)
      白石賢二
    • Organizer
      10^<th>I10th International Conference on Atomically Cotrolled Surfaces, Interfaces and Nanostructures
    • Place of Presentation
      Granada, Spain
    • Related Report
      2009 Annual Research Report
  • [Presentation] Guiding Principles toward Future Gate Stacks Given by the Construction of New Physical Concepts2009

    • Author(s)
      白石賢二
    • Organizer
      2009 Symposium on VLSI Technologies
    • Place of Presentation
      京都
    • Related Report
      2009 Annual Research Report
  • [Presentation] Theoretical models for work function control2009

    • Author(s)
      白石賢二
    • Organizer
      16^<th> biannual conference of Insulating Films on Semiconductors
    • Place of Presentation
      Cambridge, UK
    • Related Report
      2009 Annual Research Report
  • [Presentation] Atomistic Studies for MONOS-Type Charge Trap Memories -A Theoretical Guiding Principles for High Program/Erase Endurance-2009

    • Author(s)
      白石賢二
    • Organizer
      The 15^<th> International Workshop on the Physics of Semiconductor Devices
    • Place of Presentation
      New Delhi, India
    • Related Report
      2009 Annual Research Report
  • [Presentation] イオン性と共有結合性が織りなす新しい材料科学の世界-High-kゲートスタックを振り返って2009

    • Author(s)
      白石賢二
    • Organizer
      2009年秋季第70回応用物理学会学術講演会シンポジウム、「High-kゲートスタック研究を振り返り、次のステップヘ」
    • Place of Presentation
      富山市
    • Related Report
      2009 Annual Research Report
  • [Presentation] First principles studies on the proton transfer mechanism in cytochrome c oxidase2009

    • Author(s)
      白石賢二
    • Organizer
      第47回日本生物物理学会年会シンポジウム"Structural chemical studies on physiological functions of proteins"
    • Place of Presentation
      徳島市
    • Related Report
      2009 Annual Research Report
  • [Presentation] オーミックコンタクトの再考2009

    • Author(s)
      高田幸宏
    • Organizer
      2009年秋季第70回応用物理学会学術講演会
    • Place of Presentation
      富山市
    • Related Report
      2009 Annual Research Report
  • [Presentation] Negatively Charged Deep Level Defects Generated by Yttrium and LanthanumIncorporation into HfO2 for Vth adjustment, and the Impact on TDDB, PBTI and 1/f noise2009

    • Author(s)
      M.Sato
    • Organizer
      2009 IEEE Electron Devices Meeting
    • Place of Presentation
      Baltimore, USA
    • Related Report
      2009 Annual Research Report
  • [Presentation] Reversible and Irreversible Degradation Attributing to Oxygen Vacancy in HfSiON Gate Films during Electrical Stress Application2009

    • Author(s)
      R.Hasunuma
    • Organizer
      2009 IEEE Electron Devices Meeting
    • Place of Presentation
      Baltimore, USA
    • Related Report
      2009 Annual Research Report
  • [Presentation] Charged defects reduction in gate insulator with multivalent materials2009

    • Author(s)
      高田幸宏
    • Organizer
      2009 Symposium on VLSI Technologies
    • Place of Presentation
      京都
    • Related Report
      2009 Annual Research Report
  • [Presentation] Capacitance measurements on quantum dots coupled to a two-dimensional electron system2008

    • Author(s)
      野村晋太郎
    • Organizer
      13th Advanced Heterostructures and Nanostructures Workshop
    • Place of Presentation
      ハワイ(アメリカ)
    • Year and Date
      2008-12-09
    • Related Report
      2008 Annual Research Report
  • [Presentation] Theoretical investigation of quantum dot coupled to a two-dimensional electron system2008

    • Author(s)
      村口正和
    • Organizer
      13th Advanced Heterostructures and Nanostructures Workshop
    • Place of Presentation
      ハワイ(アメリカ)
    • Year and Date
      2008-12-09
    • Related Report
      2008 Annual Research Report
  • [Presentation] 量子ドットフローティングメモリめ低温におけるC-V特性2008

    • Author(s)
      櫻井蓉子
    • Organizer
      第69回応用物理学会学術講演会
    • Place of Presentation
      中部大学
    • Year and Date
      2008-09-04
    • Related Report
      2008 Annual Research Report
  • [Presentation] Temperature Dependence of Capacitance of Si Quantum Dot Floating Gate MOS Capacitor2008

    • Author(s)
      櫻井蓉子
    • Organizer
      25th international conference on Low Temperature Physics
    • Place of Presentation
      アムステルダム(オランダ)
    • Year and Date
      2008-08-09
    • Related Report
      2008 Annual Research Report
  • [Presentation] Theoretical investigations on metal/high-k interfaces2008

    • Author(s)
      K. Shiraishi. T. Nakayama, S. Miyazaki, A. Ohta, Y. Akasaka, H. Watanabe, Y. Nara, K. Yamada
    • Organizer
      2008 International Conference on Solid-State and Integrated-Circuit Technology
    • Place of Presentation
      Beijing, China
    • Related Report
      2009 Final Research Report
  • [Presentation] Theoretical Investigation of Metal/Dielectric Interfaces -Breakdown of Schottky Barrier Limits-2008

    • Author(s)
      K. Shiraishi, T. Nakayama, T. Nakaoka, A. Ohta, S. Miyazaki
    • Organizer
      214th Meeting of Electrochemical Society
    • Place of Presentation
      Pheonix, AZ., USA
    • Related Report
      2009 Final Research Report
  • [Presentation] Characteristic Nature of High-k Dielectric Interfaces2008

    • Author(s)
      K. Shiraishi
    • Organizer
      IEEE EDS WIMNACT 2008 on NANOELECRONICS
    • Place of Presentation
      Sikkim, India
    • Related Report
      2009 Final Research Report
  • [Presentation] Physics of Schottky barrier at Metal/high-k Interfaces2008

    • Author(s)
      T. Nakayama, R. Ayuda, H. Nii, K. Shiraishi
    • Organizer
      2008 MRS Spring Meeting
    • Place of Presentation
      San Francisco, USA(invited)
    • Related Report
      2009 Final Research Report
  • [Presentation] Characteristic Nature of High-K Dielectric Interfaces2008

    • Author(s)
      K. Shiraishi
    • Organizer
      IEEE EDS WIMNACT 2008 on NANOELECRONICS
    • Place of Presentation
      Sikkim, India
    • Related Report
      2007 Annual Research Report
  • [Presentation] Schottky barrier and stability of metal/high-k interfaces; theoretical view2007

    • Author(s)
      T. Nakayama
    • Organizer
      Int. Conf. Solid State Devices and Materials
    • Place of Presentation
      Tsukuba, Japan
    • Related Report
      2009 Final Research Report 2008 Self-evaluation Report
  • [Presentation] Theoretical Studies on Metal/. High-k Gate Stacks2007

    • Author(s)
      K. Shiraishi, Y. Akasaka, G. Nakamura, T. Nakayama, S. Miyazaki, H. Watanabe, A. Ohta, K. Ohmori, T. Chikyow, Y. Nara, K. Yamabe, K. Yamada
    • Organizer
      211th Meeting of Electrochemical Society
    • Place of Presentation
      Chicago, USA
    • Related Report
      2009 Final Research Report
  • [Presentation] How can first principles calculations give large contributions to industries?2007

    • Author(s)
      K. Shiraishi
    • Organizer
      ISSP International Workshop/ Symposium on Foundation and Application of Density Functional Theory
    • Place of Presentation
      Kashiwa, Japan
    • Related Report
      2009 Final Research Report
  • [Presentation] Theoretical Studies on Fermi Level Pining of Hf-Based High-k Gate Stacks Based on Thermodynamics2007

    • Author(s)
      K. Shiraishi, Y. Akasaka, G. Nakamura, M. Kadoshima, H. Watanabe, K. Ohmori, T. Chikyow, K. Yamabe, Y. Nara, Y. Ohji, K. Yamada
    • Organizer
      212th Meeting of Electrochemical Society
    • Place of Presentation
      Washington D.C., USA
    • Related Report
      2009 Final Research Report
  • [Presentation] Interface Properties of Hf-Based High-k Gate Dielectrics -O Vacancies and Interface Reaction-2007

    • Author(s)
      K. Shiraishi
    • Organizer
      14th International Workshop on the Physics of Semiconductor Devices
    • Place of Presentation
      Mumbai, India
    • Related Report
      2009 Final Research Report
  • [Presentation] Carbon Nanotube and its Hybrid Structures2007

    • Author(s)
      A. Oshiyama
    • Organizer
      2nd Int. Symposium on Nanometer-Scale Quantum Physics (nanoPHYS07)
    • Place of Presentation
      Tokyo
    • Related Report
      2009 Final Research Report
  • [Presentation] Recent Progress in Understanding the Mechanism of Shottoky Barrier Height Formation at Various Interfaces2007

    • Author(s)
      K. Shiraishi, T. Nakayama, S. Okada, S. Miyazaki, H. Watanabe, Y. Akasaka, T. Chikyow, Y. Nara, K. Yamada
    • Organizer
      International Symposium on Theories of Organic-Metal Interfaces 2007
    • Place of Presentation
      Suita, Osaka, Japan
    • Related Report
      2009 Final Research Report
  • [Presentation] Theoretical Studies on Metal/.High-k Gate Stacks2007

    • Author(s)
      K. Shiraishi, Y. Akasaka, G. Nakamura, T. Nakayama, S.Miyazaki, H.Watanabe, A.Ohta, K. Ohmori, T. Chikyow, Y. Nara, K.Yamabe, and K. Yamada
    • Organizer
      211th Meeting of Electrochemical Society
    • Place of Presentation
      Chicago, USA
    • Related Report
      2008 Self-evaluation Report 2007 Annual Research Report
  • [Presentation] Schottky barrier and stability of metal/high-k interfaces; theoretical view2007

    • Author(s)
      T. Nakayama
    • Organizer
      Int. Conf. Solid State Devices and Materials
    • Place of Presentation
      Tsukuba, Japan.
    • Related Report
      2007 Annual Research Report
  • [Presentation] How can first principles calculations give large contributions to industries?2007

    • Author(s)
      K., Shiraishi
    • Organizer
      ISSP International Workshiop/Symposium on Foundation and Application of Density Functional Theory
    • Place of Presentation
      Kashiwa, Japan
    • Related Report
      2007 Annual Research Report
  • [Presentation] Theoretical Studies on Fermi Level Pining of Hf-Based High-K Gate Stacks Based on Thermodynamics2007

    • Author(s)
      K., Shiraishi・Y., Akasaka・G., Nakamura・T., Nakayama・S., Miyazaki・H., Watanabe・A., Ohta・K., Ohmori・T., Chikyow・Y., Nara・K., Yamada
    • Organizer
      212th Meeting of Electrochemical Society
    • Place of Presentation
      Washington D. C., USA
    • Related Report
      2007 Annual Research Report
  • [Presentation] Interface Properties of Hf-Based High-K Gate Dielectrics -O Vacancies and Interface Reaction2007

    • Author(s)
      K. Shiraishi
    • Organizer
      14th International Workshop on the Physics of Semicon ductor Devices
    • Place of Presentation
      Mumbai, India
    • Related Report
      2007 Annual Research Report
  • [Presentation] Theory of Fermi Level Pinning of High-k Dielectrics2006

    • Author(s)
      K. Shiraishi, H. Takeuchi, Y. Akasaka, H. Watanabe, N. Umezawa, T. Chikyow, Y. Nara, T. -J. King Liu, K. Yamada
    • Organizer
      2006 International Conference on Simulation of Semiconductor Process and Devices
    • Place of Presentation
      Monterey, CA, USA
    • Related Report
      2009 Final Research Report
  • [Presentation] Physics of interfaces between gate electrodes and high-k dielectrics2006

    • Author(s)
      K. Shiraishi, H. Takeuchi, Y. Akasaka, T. Nakayama, S. Miyazaki, T. Nakaoka, A. Ohta, H. Watanabe, N. Umezawa, K. Ohmori, P. Ahmet, K. Toii, T. Chikyow, Y. Nara, T-J. King Liu, H. Iwai, K. Yamada
    • Organizer
      8th International Conference on Solid-State and Integrated-Circuit Technology
    • Place of Presentation
      Shanghai, China
    • Related Report
      2009 Final Research Report
  • [Presentation] Physics of Metal/High-k Interfaces2006

    • Author(s)
      T. Nakayama, K. Shiraishi, S. Miyazaki, Y. Akasaka, K. Torii, P. Ahmet, K. Ohmori, N. Umezawa, H. Watanabe, T. Chikyow, Y. Nara, H. Iwai, K. Yamada
    • Organizer
      Fourth International Symposium on High Dielectric Constant Gate Stacks at the 210th Meeting of Electrochemical Society
    • Place of Presentation
      Cancun, Mexico
    • Related Report
      2009 Final Research Report
  • [Presentation] What Happen at High-k Dielectric Interfaces?2006

    • Author(s)
      K. Shiraishi, T. Nakayama, Y. Akasaka, H. Takeuchi, S. Miyazaki, N. Umezawa, G. Nakamura, A. Ohta, T. Nakaoka, H. Watanabe, K. Yamabe, K. Ohmori, P. Ahmet, T. Chikyow, Y. Nara, H. Iwai, K. Yamada
    • Organizer
      37th IEEE Semiconductor Interface Specialist Conference
    • Place of Presentation
      San Diego, CA, USA
    • Related Report
      2009 Final Research Report
  • [Presentation] Atomic and Electronic Structures of Carbon nanotubes on Si and Metal Surfaces2006

    • Author(s)
      A. Oshiyama
    • Organizer
      9th Asian Workshop on First-Principles Electronic-Structure Calculations
    • Place of Presentation
      Seoul, KOREA
    • Related Report
      2009 Final Research Report
  • [Remarks] 研究項目A04の宮崎教授グループと20年度だけで、計23件の共同研究発表を行った。これは特定領域研究の組織を最大限に有効利用したものである。

    • Related Report
      2008 Self-evaluation Report

URL: 

Published: 2006-04-01   Modified: 2021-04-07  

Information User Guide FAQ News Terms of Use Attribution of KAKENHI

Powered by NII kakenhi