Theoretical Design of Nano-Device and Nano-Interface by First Principles Approach

• Project/Area Number: 18063003
• Research Category: Grant-in-Aid for Scientific Research on Priority Areas
• Allocation Type: Single-year Grants
• Review Section: Science and Engineering
• Research Institution: University of Tsukuba
• Principal Investigator: SHIRAISHI Kenji University of Tsukuba, 大学院・数理物質科学研究科, 教授 (20334039)
• Co-Investigator(Kenkyū-buntansha): OSHIYAMA Atsushi 東京大学, 工学系研究科, 教授 (80143361) ; MURAGUCHI Masakazu 東北大学, 学際科学国際高等研究センター, 教育研究補助者 (90386623) ; OKADA Susumu 筑波大学, 大学院・数理物質科学研究科, 准教授 (70302388) ; YAMAUCHI Jun 慶応義塾大学, 理工学部, 講師 (90383984) ; NAKAYAMA Takashi 千葉大学, 理学部, 教授 (70189075) ; BOERO Mauro 筑波大学, 大学院・数理物質科学研究科, 准教授 (40361315) ; NOMURA Shintaro 筑波大学, 大学院・数理物質科学研究科, 准教授 (90271527) ; BERBER Savas 筑波大学, 大学院数理物質科学研究科, 助手 (90375402)
• Co-Investigator(Renkei-kenkyūsha): ENDOH Tetsuo 東北大学, 学際科学国際高等研究センター, 教授 (00271990)
• Project Period (FY): 2006 – 2009
• Project Status: Completed (Fiscal Year 2009)
• Budget Amount: ¥50,600,000 (Direct Cost: ¥50,600,000); Fiscal Year 2009: ¥13,400,000 (Direct Cost: ¥13,400,000); Fiscal Year 2008: ¥13,400,000 (Direct Cost: ¥13,400,000); Fiscal Year 2007: ¥11,900,000 (Direct Cost: ¥11,900,000); Fiscal Year 2006: ¥11,900,000 (Direct Cost: ¥11,900,000)
• Keywords: 第一原理計算 / 理論 / ナノ界面 / 新材料 / ナノサイエンス / 界面 / 半導体デバイス / ナノ物性 / 半導体 / MOSトランジスタ / 量子効果 / 炭素ナノチューブ

Research Abstract

In this four years project, we have obtained many important results which lead a breakthrough of nano-technologies. The primary results are as follows. (1) Proposal of new physics between different dimensional systems. (2) Guiding principles for MONOS memories with high program/erase endurance, (3) Band structure design of graphene based materials. (4) Clarification of nano-scale capacitances. (5) Theoretical proposal of breakdown of Schottky barrier limits. (6) Anomaly of effective masses in Si nano-structures. (7) Serious effect of atomic vacancies for strained Ge channels.

Research Products

• [Journal Article] (2010)
  • Author(s): Y. Sakurai, J-I Iwata, M. Muraguchi, Y. Shigeta, Y. Takada, S. Nomura, T. Endoh, S. Saito, K. Shiraishi, M. Ikeda, K. Makihara, S. Miyazaki
  • Journal Title: Jpn. J. Appl. Phys. 45 Pages: 14001-14001
  • Peer Reviewed
• [Journal Article] A massively-parallel electronic-structure calculations based on real-space density functional theory (2010)
  • Author(s): J-I, Iwata, D. Takahashi, A. Oshiyama, T. Boku, K. Shiraishi, S. Okada, K. Yabana
  • Journal Title: J. Comp. Phys. 229 Pages: 2339-2363
  • Peer Reviewed
• [Journal Article] A massively-parallel electronic-structure calculations based on real-space density functional theory (2010)
  • Author(s): J-I, Iwata
  • Journal Title: J.Comp.Phys 96 Pages: 2339-2363
  • Peer Reviewed
• [Journal Article] Anomalous temperature dependence of electron tunneling between a two-dimensional electron gas and Si dots (2010)
  • Author(s): Y.Sakurai
  • Journal Title: Physica E 42 Pages: 918-921
  • Peer Reviewed
• [Journal Article] Temperature Dependence of Electron Tunneling between Two Dimensional Electron Gas and Si Quantum Dots (2010)
  • Author(s): Y.Sakurai
  • Journal Title: Jpn.J.Appl.Phys 49
  • Peer Reviewed
• [Journal Article] Theoretical studies on the charge trap mechanism of MONOS type memories - Relationship between atomistic information and program/erase actions (2009)
  • Author(s): A. Otake, K. Yamaguchi, K. Kobayashi, K. Shiraishi
  • Journal Title: Microelectronic. Eng. 86 Pages: 1849-1851
  • Peer Reviewed
• [Journal Article] Significant Change in Electronic Structures of Heme Upon Reduction by Strong Coulomb Repulsion between Fe d Electrons (2009)
  • Author(s): K. Kamiya, S. Yamamoto, K. Shiraishi, A. Oshiyama
  • Journal Title: J. Phys. Chem. B 113 Pages: 6866-6872
  • Peer Reviewed
• [Journal Article] Transient current behavior through molecular bridge systems; effects of intra-molecule current on quantum relaxation and oscillation (2009)
  • Author(s): Y. Tomita, T. Nakayama, H. Ishii
  • Journal Title: e-J. Surf. Sci. Nanotech. 7 Pages: 606-616
  • NAID: 130004439158
  • Peer Reviewed
• [Journal Article] Stability and Schottky barrier of silicides: First-principles study (2009)
  • Author(s): T. Nakayama, S. Sotome, S. Shinji
  • Journal Title: Microelectronic Eng. 86 Pages: 1718-1721
  • Peer Reviewed
• [Journal Article] Atomistic origin of high-quality "novel SiON" gate dielectric (2009)
  • Author(s): K.Yamaguchi
  • Journal Title: MICROELECTRONIC ENGINEERING 86 Pages: 1680-1682
  • Peer Reviewed
• [Journal Article] Stability of Si impurity in high-kappa oxides (2009)
  • Author(s): N.Umezawa
  • Journal Title: MICROELECTRONIC ENGINEERING 86 Pages: 1780-1781
  • Peer Reviewed
• [Journal Article] Theoretical studies on the charge trap mechanism of MONOS type memories-Relationship between atomistic information and program/erase actions (2009)
  • Author(s): A.Otake
  • Journal Title: MICROELECTRONIC ENGINEERING 86 Pages: 1849-1851
  • Peer Reviewed
• [Journal Article] Significant Change in Electronic Structures of Heme Upon Reduction by Strong Coulomb Repulsion between Fe d Electrons (2009)
  • Author(s): K.Kamiya
  • Journal Title: JOURNAL OF PHYSICAL CHEMISTRY B 113 Pages: 6866-6872
  • Peer Reviewed
• [Journal Article] Effective-Work-Function Control by Varying the TiN Thickness in Poly-Si/TiN Gate Electrodes for Scaled High-k CMOSFETs (2009)
  • Author(s): M.Kadoshima
  • Journal Title: IEEE ELECTRON DEVICE LETTERS 30 Pages: 466-468
  • Peer Reviewed
• [Journal Article] Theoretical study of the time-dependent phenomenon of photon-assisted tunneling through a charged quantum dot (2009)
  • Author(s): M.Muraguchi
  • Journal Title: JOURNAL OF PHYSICS-CONDENSED MATTER 21
  • Peer Reviewed
• [Journal Article] Transient current behavior through molecular bridge systems ; effects of intra-molecule current on quantum relaxation and oscillation (2009)
  • Author(s): Y.Tomita
  • Journal Title: e-J.Surf.Sci.Nanotech 7 Pages: 606-616
  • Peer Reviewed
• [Journal Article] Stability and Schottky barrier of silicides : First-principles study (2009)
  • Author(s): T.Nakayama
  • Journal Title: Microelectronic Eng 86 Pages: 1718-1721
  • Peer Reviewed
• [Journal Article] Electronic Properties of Graphite with Rotational Stacking Arrangement (2009)
  • Author(s): S.Okada
  • Journal Title: Jpn.J.Appl.Phys 48
  • NAID: 40016585485
  • Peer Reviewed
• [Journal Article] Temperature dependence of capacitance of Si quantum dot floating gate MOS capacitor (2009)
  • Author(s): 櫻井蓉子
  • Journal Title: Journal of Physics, Conference Series (印刷中)
  • Peer Reviewed
• [Journal Article] Theoretical Studies of Coupled Quantum Dot System with a Two-dimensional Electron Gas in the Magnetic Fields (2009)
  • Author(s): 高田幸宏
  • Journal Title: Journal of Physics, Conference Series (印刷中)
  • Peer Reviewed
• [Journal Article] Theoretical Study on Time Dependent Phenomena of Photon-Assisted Tunneling through Charged Quantum Dot (2009)
  • Author(s): 村口正和
  • Journal Title: Journal of Physics C (印刷中)
  • Peer Reviewed
• [Journal Article] Effective Mass Anomalies in Strained Si Thin Films and Crystals (2008)
  • Author(s): J. Yamauchi
  • Journal Title: IEEE ELECTRON DEVICE LETTERS 29 Pages: 186-188
  • Peer Reviewed
• [Journal Article] Quantum cascade multi-electron injection into Si-quantum-dot floating gates embedded in SiO2 matrices (2008)
  • Author(s): Y. Takada, M. Muraguchi, K. Shiraishi
  • Journal Title: Appl. Surf. Sci. 254 Pages: 6199-6202
  • Peer Reviewed
• [Journal Article] Theoretical study of the time-dependent phenomena on a two-dimensional electron gas weakly coupled with a discrete level (2008)
  • Author(s): M. Muraguchi, Y. Takada, S. Nomura, K. Shiraishi
  • Journal Title: Jpn. J. Appl. Phys. 47 Pages: 7807-7811
  • NAID: 120007131216
  • Peer Reviewed
• [Journal Article] Energetics of nanoscale graphene ribbons: Edge geometries and electronic structures (2008)
  • Author(s): S. Okada
  • Journal Title: Phys. Rev. B 77
  • Peer Reviewed
• [Journal Article] Energetics of Carbon Peapods; Radial deformation of nanotubes and aggregation of encapsulated C60 (2008)
  • Author(s): S. Okada
  • Journal Title: Phys. Rev. B 77 Pages: 235419-235419
  • Peer Reviewed
• [Journal Article] Quantum cascade multi-electron injection into Si-quantum-dot floating gatesembedded in SiO_2 matrices (2008)
  • Author(s): 高田幸宏
  • Journal Title: Applied Surface Science 254 Pages: 6199-6202
  • Peer Reviewed
• [Journal Article] シリコンナノ構造の第一原理計算 : 有効質量異常の発現 (2008)
  • Author(s): 山内淳
  • Journal Title: 固体物理 43 Pages: 289-296
  • NAID: 40016099914
  • Peer Reviewed
• [Journal Article] Theoretical study of the time-dependent phenomena on a two-dimensional electron zas weakly counled with a discrete level (2008)
  • Author(s): 村口正和
  • Journal Title: Japanese Jourfial of Applied Physics 47 Pages: 7807-7811
  • Peer Reviewed
• [Journal Article] Energetics of nanoscale graphene ribbons : Edge geometries and electronic structures (2008)
  • Author(s): 岡田晋
  • Journal Title: Physical Review B 77, Art. No.041408
  • Peer Reviewed
• [Journal Article] Energetics of Carbon Peapods ; Radial deformation of nanotubes and aggregation of encapsulated C_<60> (2008)
  • Author(s): 岡田晋
  • Journal Title: Physicil Review B 77, Art. No.235419
  • Peer Reviewed
• [Journal Article] Ge vacancies at Ge/Si interfaces: Stress-enhanced pairing dist ortion (2008)
  • Author(s): K., Takai・K., Shiraishi・A., Oshiyama
  • Journal Title: PHYSICAL REVIEW B 77
  • Peer Reviewed
• [Journal Article] 金属/絶縁体界面の物理:ショットキーバリアと原子間混晶化 (2007)
  • Author(s): 中山隆史、白石賢二
  • Journal Title: 表面科学 28 Pages: 28-33
  • Peer Reviewed
• [Journal Article] Quantum effects in a double-walled carbon nanotube capacitor (2007)
  • Author(s): K. Uchida, S. Okada, K. Shiraishi, A. Oshiyama
  • Journal Title: PHYSICAL REVIEW B 76(15) Pages: 155436-155436
  • NAID: 120007139048
  • Peer Reviewed
• [Journal Article] Effective-Mass Anormalies of Strained Silicon Thin Films: Surface and Confinement Effects (2007)
  • Author(s): J. Yamauchi, S. Matsuno
  • Journal Title: JAPANEASE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIER COMMUNICATIONS & REVIEW PAPERS 46 Pages: 3273-3276
  • Peer Reviewed
• [Journal Article] Quantum effects in a double-walled carbon nanotube capacitor (2007)
  • Author(s): K. Uchida, S. Okada, K. Shiraishi, and A. Oshiyama
  • Journal Title: PHYSICAL REVIEW B 76 (15) : Art. No. 155436
  • NAID: 120007139048
• [Journal Article] Suppression of oxygen vacancy formation in Hf-based high-k dielectrics by lanthanum incorporation (2007)
  • Author(s): N, Umezawa, K, Shiraishi, et al
  • Journal Title: APPLIED PHYSICS LETTERS 91 (13) : Art. No. 132904
• [Journal Article] Quantum effects in a cylindrical carbon-nanotube capacitor (2007)
  • Author(s): K. Uchida, S. Okada, K. Shiraishi, and A. Oshiyama
  • Journal Title: OURNAL OF PHYSICS-CONDENSED MATTER 19 (36) : Art. No. 365218
• [Journal Article] Quantum effects in a double-walled carbon nanotube capacitor (2007)
  • Author(s): K., Uchida・S., Okada・K., Shiraishi・A., Oshiyama
  • Journal Title: PHYSICAL REVIEW B 76
  • NAID: 120007139048
  • Peer Reviewed
• [Journal Article] Suppression of oxygen vacancy formation in Hf-based high-k dielectrics by lanthanum incorporation (2007)
  • Author(s): N., Umezawa・K., Shiraishi・S., Sugino, et. al.
  • Journal Title: APPLIED PHYSICS LETTERS 91
  • Peer Reviewed
• [Journal Article] Quantum effects in a cylindrical carbon-nanotube capacito (2007)
  • Author(s): K., Uchida・S., Okada・K., Shiraishi・A., Oshiyama
  • Journal Title: JOURNAL OF PHYSICS-CONDENSED MATTER 19
  • Peer Reviewed
• [Journal Article] Hafnium 4f core-level shifts caused by nitrogen incorporation in Hf-based high-k gate dielectrics (2007)
  • Author(s): N., Umezawa・K., Shiraishi・S., Miyazaki, et. al.
  • Journal Title: JAPANEST JOURNAL OF APPLIED PHYSICS PART 1 46 Pages: 3507-3509
  • NAID: 40015421738
  • Peer Reviewed
• [Journal Article] Guiding principle of energy level controllability of silicon dangling bonds in HfSiON (2007)
  • Author(s): N., Umezawa・K., Shiraishi・S., Miyazaki, et. al.
  • Journal Title: JAPANEST JOURNAL OF APPLIED PHYSICS PART 1 46 Pages: 1891-1894
  • Peer Reviewed
• [Journal Article] Physical origin of stress-induced leakage currents in ultra-thin silicon dioxide films (2007)
  • Author(s): T., ・Endoh・K., Hirose・K., Shiraishi
  • Journal Title: IEICE TRANSACTIONS ON ELECTRONICS E90C Pages: 955-961
  • NAID: 10018216417
  • Peer Reviewed
• [Journal Article] Role of nitrogen atoms in reduction of electron charge traps in Hf-based high-k dielectrics (2007)
  • Author(s): N., Umezawa・K., Shiraishi・K., Torii, et. al.
  • Journal Title: IEEE ELECTRON DEVICE LETTERS 28 Pages: 363-365
  • Peer Reviewed
• [Journal Article] Effective-Mass Anormalies of Strained Silicon Thin Films:Surface and Confinement Effects (2007)
  • Author(s): J., Yamauchi・S., Matsuno
  • Journal Title: JAPANESE JOURNAL OF APPLIED PHYSICS PART 1 46 Pages: 3273-3276
  • Peer Reviewed
• [Journal Article] Effective-Mass Anormalies in Strained Si Thin Films and Crystals (2007)
  • Author(s): J., Yamauchi
  • Journal Title: IEEE ELECTRON DEVICE LETTERS; 29 Pages: 186-1886
  • Peer Reviewed
• [Journal Article] Orientation Dependence of Magnetic Moment of Carbon Nanotubes with Topological Line Defects (2007)
  • Author(s): S.Okada, K.Nakada, T.Kawai
  • Journal Title: Appl.Phys.Lett. 90
• [Journal Article] Radial-Breathing Mode Frequencies for Nanotubes Encapsulating Fullerenes (2007)
  • Author(s): S.Okada
  • Journal Title: Chem.Phys.Lett. 438 Pages: 59-59
• [Journal Article] Effect of Encapsulated Atoms on the Electronic Structure of the Fullerene cage : A Case Study on La_2@C_<78> and Ti_2C_2@C_<78> via Ultraviolet Photoelectron Spectroscopy (2007)
  • Author(s): S.Hino, M.Kato, D.Yoshimura, H.Moribe, H.Umemoto, Y.Ito, T.Sugai, H.Shinohara, M.Otani, Y.Yoshimoto, S.Okada
  • Journal Title: Phys.Rev.B 75
• [Journal Article] Modified Oxygen Vacancy Induced Fermi Level Pinning Model Extendable to P-Metal Pinning (2006)
  • Author(s): Y. Akasaka, G. Nakamura, K. Shiraishi, N. Umezawa, K. Yamabe, O. Ogawa, M. Lee, T. Amiaka, T. Kasuya, H. Watanabe, T. Chikyow, F. Ootsuka, Y. Nara, K. Nakamura
  • Journal Title: Jpn. J. Appl. Phys. 45
  • NAID: 10018461127
  • Peer Reviewed
• [Journal Article] Oxygen-vacancy-induced threshold voltage shifts in Hf-related high-k gate stacks (2006)
  • Author(s): K. Shiraishi, K. Yamada, K. Torii, Y. Akasaka, K. Nakajima, M. Konno, T. Chikyow, H. Kitajima, T. Arikado, Y. Nara
  • Journal Title: Thin Solid Films 508 Pages: 305-310
  • Peer Reviewed
• [Journal Article] Ferromagnetic Spin Ordering on Carbon Nanotubes with Topological Line Defects (2006)
  • Author(s): S. Okada, K. Nakada, K. Kuwabara, K. Daigoku, T. Kawai
  • Journal Title: Phys. Rev. B 74 Pages: 121412-121412
  • Peer Reviewed
• [Journal Article] Nano-scale view of atom intermixing at metal/semiconductor interfaces (2006)
  • Author(s): T. Nakayama, S. Itaya, D. Murayama
  • Journal Title: J. Phys. Conf. Ser. 38 Pages: 216-219
  • Peer Reviewed
• [Journal Article] Thermal annihilation process of stacking-fault tetrahedron defect in Si-film epitaxy (2006)
  • Author(s): R. Kobayashi, T. Nakayama
  • Journal Title: Thin Solid Films 508 Pages: 29-32
  • Peer Reviewed
• [Journal Article] Ferromagnetic Spin Ordering on Carbon Nanotubes with Topological Line Defects (2006)
  • Author(s): S.Okada, K.Nakada, K.Kuwabara, K.Daigoku, T.Kawai
  • Journal Title: Phys.Rev.B 74
• [Journal Article] Modified Oxygen Vacancy Induced Fermi Level Pinning Model Extendable to P-Metal Pinning (2006)
  • Author(s): Y.Akasaka, G.Nakamura, K.Shiraishi, N.Umezawa, K.Yamabe, O.Ogawa, M.Lee, T.Amiaka, T.Kasuya, H.Watanabe, T.Chikyow, F.Ootsuka, Y.Nara, K.Nakamura
  • Journal Title: Jpn.J.Appl.Phys.Part 2 45
  • NAID: 10018461127
• [Journal Article] Introduction of defects into HfO_2 gate dielectrics by metal-gate deposition studied using x-ray photoelectron spectroscopy and positron annihilation (2006)
  • Author(s): A.Uedono, T.Naito, T.Otsuka, K.Shiraishi, K.Yamabe, S.Miyazaki, H.Watanabe, N.Umezawa, T.Chikyow, Y.Akasaka, S.Kamiyama, Y.Nara, Yamada
  • Journal Title: J.Appl.Phys. 100
• [Journal Article] Oxygen-Vacancy-Induced Threshold Voltage Shifts in Hf-Related High-k Gate Stacks (2006)
  • Author(s): K.Shiraishi, K.Yamada, K.Torii, Y.Akasaka, K.Nakajima, M.Konno, T.Chikyow, H.Kitajima, T.Arikado, Y.Nara
  • Journal Title: Thin Solid Films 508 Pages: 305-305
• [Journal Article] New Theory of Effective Work Functions at Metal/High-k Dielectric Interfaces-Application to Metal/High-k HfO_2 And La_2O_3 Dielectric Interfaces- (2006)
  • Author(s): K.Shiraishi, T.Nakayama, Y.Akasaka, S.Miyazaki, T.Nakaoka, K.Ohmori, P.Ahmet, K.Torii, H.Watanabe, T.Chikyow, Y.Nara, H.Iwai, K.Yamada
  • Journal Title: ECS Transactions 2(1) Pages: 25-25
• [Journal Article] A Novel Remote Reactive Sink Layer Technique for the Control of N and O Concentrations in Metal/High-k Gate Stacks (2006)
  • Author(s): Y.Akasaka, K.Shiraishi, N.Umezawa, O.Ogawa, T.Kasuya, T.Chikyow, F.Ootsuka, Y.Nara, K.Nakamura
  • Journal Title: Technical Digest of 2006 Symposium on VLSI Tech.(Honolulu, USA) Pages: 206-206
• [Journal Article] Nano-scale view of atom intermixing at metal/semiconductor interfaces (2006)
  • Author(s): T.Nakayama, S.Itaya, D.Murayama
  • Journal Title: J.Phys.Conf.Ser. 38 Pages: 216-216
• [Journal Article] Thermal annihilation process of stacking-fault tetrahedron defect in Si-film epitaxy (2006)
  • Author(s): R.Kobayashi, T.Nakayama
  • Journal Title: Thin Solid Films 508 Pages: 29-29
• [Presentation] MONOS型メモリにおけるSiN層のN空孔型欠陥の原子構造と電子構造 (2009)
  • Author(s): 山口慶太
  • Organizer: 2009年春季第56回応用物理学関係連合講演会
  • Place of Presentation: 筑波大学
  • Year and Date: 2009-03-31
• [Presentation] MONOS型メモリにおけるSiN層への0混入の効果の理論的検討 (2009)
  • Author(s): 大竹朗
  • Organizer: 2009年春季第56回応用物理学関係連合講演会
  • Place of Presentation: 筑波大学
  • Year and Date: 2009-03-31
• [Presentation] 電子ガスー量子ドット結合系における電子構造II (2009)
  • Author(s): 高田幸宏
  • Organizer: 日本物理学会第64回年次大会
  • Place of Presentation: 立教大学
  • Year and Date: 2009-03-30
• [Presentation] 電子ガスー量子ドット結合系におけるC-V特性およびI-V特性のSweep Rate依存性 (2009)
  • Author(s): 櫻井蓉子
  • Organizer: 日本物理学会第64回年次大会
  • Place of Presentation: 立教大学
  • Year and Date: 2009-03-30
• [Presentation] 電子ガス-量子ドット結合系における電子ダイナミクスII (2009)
  • Author(s): 村口正和
  • Organizer: 日本物理学会第64回年次大会
  • Place of Presentation: 立教大学
  • Year and Date: 2009-03-30
• [Presentation] MONOS型メモリの電荷蓄積機構の第一原理計算による考察 (2009)
  • Author(s): 大竹朗
  • Organizer: 第14回ゲートスタック研究会
  • Place of Presentation: 東レ三島研修センター
  • Year and Date: 2009-01-24
• [Presentation] Physics for Si nanowire FET and its fabrication (2009)
  • Author(s): K. Shiraishi
  • Organizer: PICE International Symposium on Silicon Nano Devices in 2030: Prospects by World's Leading Scientists
  • Place of Presentation: Tokyo, Japan.
• [Presentation] Physics of Nano-Interfaces and Nano-Structures for Future Si Nano-Devices (2009)
  • Author(s): K. Shiraishi
  • Organizer: 216th Meeting of Electrochemical Society
  • Place of Presentation: Vienna, Austria
• [Presentation] Physics of Nano-contact between Si Quantum Dots and Inversion Layer (2009)
  • Author(s): S. Nomura, Y. Sakurai, Y. Takada, K. Shiraishi, M. Muraguchi, T. Endoh, M. Ikeda, K. Makihara, S. Miyazaki
  • Organizer: 216th Meeting of Electrochemical Society
  • Place of Presentation: Vienna, Austria
• [Presentation] Physics of Nano-Interfaces and Nano-Structures for Future Si Nano-Devices (2009)
  • Author(s): K. Shiraishi
  • Organizer: 10th I10th International Conference on Atomically Cotrolled Surfaces, Interfaces and Nanostructures
  • Place of Presentation: Granada, Spain
• [Presentation] Theoretical models for work function control (2009)
  • Author(s): K. Shiraishi
  • Organizer: 16th biannual conference of Insulating Films on Semiconductors
  • Place of Presentation: Cambridge, UK
• [Presentation] Guiding Principles toward Future Gate Stacks Given by the Construction of New Physical Concepts (2009)
  • Author(s): K. Shiraishi
  • Organizer: 2009 Symposium on VLSI Technologies
  • Place of Presentation: Kyoto, Japan
• [Presentation] Universal Guiding Principles for Charge-Trap Memories with High Program/Erase Cycle Endurance (2009)
  • Author(s): K. Yamaguchi, A. Otake, K. Kobayashi, K. Shiraishi
  • Organizer: 2009 IEEE Electron Devices Meeting
  • Place of Presentation: Baltimore, USA
• [Presentation] Atomistic Studies for MONOS-Type Charge Trap Memories -A Theoretical Guiding Principles for High Program/Erase Endurance- (2009)
  • Author(s): K. Shiraishi, K. Yamaguchi, A. Otake, K. Kobayashi
  • Organizer: The 15th International Workshop on the Physics of Semiconductor Devices
  • Place of Presentation: New Delhi, India
• [Presentation] Physics for Si nanowire FET and its fabrication (2009)
  • Author(s): 白石賢二
  • Organizer: PICE International Symposium on Silicon Nano Devices in 2030 : Prospects by World's Leading Scientists
  • Place of Presentation: 東京
• [Presentation] Physics of Nano-Interfaces and Nano-Structures for Future Si Nano-Devices (2009)
  • Author(s): 白石賢二
  • Organizer: 216^<th> Meeting of Electrochemical Society
  • Place of Presentation: Vienna, Austria
• [Presentation] Physics of Nano-contact between Si Quantum Dots and Inversion Layer (2009)
  • Author(s): S.Nomura
  • Organizer: 216^<th> Meeting of Electrochemical Society
  • Place of Presentation: Vienna, Austria
• [Presentation] Physics of Nano-Interfaces and Nano-Structures for Future Si Nano-Devices (2009)
  • Author(s): 白石賢二
  • Organizer: 10^<th>I10th International Conference on Atomically Cotrolled Surfaces, Interfaces and Nanostructures
  • Place of Presentation: Granada, Spain
• [Presentation] Guiding Principles toward Future Gate Stacks Given by the Construction of New Physical Concepts (2009)
  • Author(s): 白石賢二
  • Organizer: 2009 Symposium on VLSI Technologies
  • Place of Presentation: 京都
• [Presentation] Theoretical models for work function control (2009)
  • Author(s): 白石賢二
  • Organizer: 16^<th> biannual conference of Insulating Films on Semiconductors
  • Place of Presentation: Cambridge, UK
• [Presentation] Atomistic Studies for MONOS-Type Charge Trap Memories -A Theoretical Guiding Principles for High Program/Erase Endurance- (2009)
  • Author(s): 白石賢二
  • Organizer: The 15^<th> International Workshop on the Physics of Semiconductor Devices
  • Place of Presentation: New Delhi, India
• [Presentation] イオン性と共有結合性が織りなす新しい材料科学の世界-High-kゲートスタックを振り返って (2009)
  • Author(s): 白石賢二
  • Organizer: 2009年秋季第70回応用物理学会学術講演会シンポジウム、「High-kゲートスタック研究を振り返り、次のステップヘ」
  • Place of Presentation: 富山市
• [Presentation] First principles studies on the proton transfer mechanism in cytochrome c oxidase (2009)
  • Author(s): 白石賢二
  • Organizer: 第47回日本生物物理学会年会シンポジウム"Structural chemical studies on physiological functions of proteins"
  • Place of Presentation: 徳島市
• [Presentation] オーミックコンタクトの再考 (2009)
  • Author(s): 高田幸宏
  • Organizer: 2009年秋季第70回応用物理学会学術講演会
  • Place of Presentation: 富山市
• [Presentation] Negatively Charged Deep Level Defects Generated by Yttrium and LanthanumIncorporation into HfO2 for Vth adjustment, and the Impact on TDDB, PBTI and 1/f noise (2009)
  • Author(s): M.Sato
  • Organizer: 2009 IEEE Electron Devices Meeting
  • Place of Presentation: Baltimore, USA
• [Presentation] Reversible and Irreversible Degradation Attributing to Oxygen Vacancy in HfSiON Gate Films during Electrical Stress Application (2009)
  • Author(s): R.Hasunuma
  • Organizer: 2009 IEEE Electron Devices Meeting
  • Place of Presentation: Baltimore, USA
• [Presentation] Charged defects reduction in gate insulator with multivalent materials (2009)
  • Author(s): 高田幸宏
  • Organizer: 2009 Symposium on VLSI Technologies
  • Place of Presentation: 京都
• [Presentation] Capacitance measurements on quantum dots coupled to a two-dimensional electron system (2008)
  • Author(s): 野村晋太郎
  • Organizer: 13th Advanced Heterostructures and Nanostructures Workshop
  • Place of Presentation: ハワイ(アメリカ)
  • Year and Date: 2008-12-09
• [Presentation] Theoretical investigation of quantum dot coupled to a two-dimensional electron system (2008)
  • Author(s): 村口正和
  • Organizer: 13th Advanced Heterostructures and Nanostructures Workshop
  • Place of Presentation: ハワイ(アメリカ)
  • Year and Date: 2008-12-09
• [Presentation] 量子ドットフローティングメモリめ低温におけるC-V特性 (2008)
  • Author(s): 櫻井蓉子
  • Organizer: 第69回応用物理学会学術講演会
  • Place of Presentation: 中部大学
  • Year and Date: 2008-09-04
• [Presentation] Temperature Dependence of Capacitance of Si Quantum Dot Floating Gate MOS Capacitor (2008)
  • Author(s): 櫻井蓉子
  • Organizer: 25th international conference on Low Temperature Physics
  • Place of Presentation: アムステルダム(オランダ)
  • Year and Date: 2008-08-09
• [Presentation] Theoretical investigations on metal/high-k interfaces (2008)
  • Author(s): K. Shiraishi. T. Nakayama, S. Miyazaki, A. Ohta, Y. Akasaka, H. Watanabe, Y. Nara, K. Yamada
  • Organizer: 2008 International Conference on Solid-State and Integrated-Circuit Technology
  • Place of Presentation: Beijing, China
• [Presentation] Theoretical Investigation of Metal/Dielectric Interfaces -Breakdown of Schottky Barrier Limits- (2008)
  • Author(s): K. Shiraishi, T. Nakayama, T. Nakaoka, A. Ohta, S. Miyazaki
  • Organizer: 214th Meeting of Electrochemical Society
  • Place of Presentation: Pheonix, AZ., USA
• [Presentation] Characteristic Nature of High-k Dielectric Interfaces (2008)
  • Author(s): K. Shiraishi
  • Organizer: IEEE EDS WIMNACT 2008 on NANOELECRONICS
  • Place of Presentation: Sikkim, India
• [Presentation] Physics of Schottky barrier at Metal/high-k Interfaces (2008)
  • Author(s): T. Nakayama, R. Ayuda, H. Nii, K. Shiraishi
  • Organizer: 2008 MRS Spring Meeting
  • Place of Presentation: San Francisco, USA(invited)
• [Presentation] Characteristic Nature of High-K Dielectric Interfaces (2008)
  • Author(s): K. Shiraishi
  • Organizer: IEEE EDS WIMNACT 2008 on NANOELECRONICS
  • Place of Presentation: Sikkim, India
• [Presentation] Schottky barrier and stability of metal/high-k interfaces; theoretical view (2007)
  • Author(s): T. Nakayama
  • Organizer: Int. Conf. Solid State Devices and Materials
  • Place of Presentation: Tsukuba, Japan
• [Presentation] Theoretical Studies on Metal/. High-k Gate Stacks (2007)
  • Author(s): K. Shiraishi, Y. Akasaka, G. Nakamura, T. Nakayama, S. Miyazaki, H. Watanabe, A. Ohta, K. Ohmori, T. Chikyow, Y. Nara, K. Yamabe, K. Yamada
  • Organizer: 211th Meeting of Electrochemical Society
  • Place of Presentation: Chicago, USA
• [Presentation] How can first principles calculations give large contributions to industries? (2007)
  • Author(s): K. Shiraishi
  • Organizer: ISSP International Workshop/ Symposium on Foundation and Application of Density Functional Theory
  • Place of Presentation: Kashiwa, Japan
• [Presentation] Theoretical Studies on Fermi Level Pining of Hf-Based High-k Gate Stacks Based on Thermodynamics (2007)
  • Author(s): K. Shiraishi, Y. Akasaka, G. Nakamura, M. Kadoshima, H. Watanabe, K. Ohmori, T. Chikyow, K. Yamabe, Y. Nara, Y. Ohji, K. Yamada
  • Organizer: 212th Meeting of Electrochemical Society
  • Place of Presentation: Washington D.C., USA
• [Presentation] Interface Properties of Hf-Based High-k Gate Dielectrics -O Vacancies and Interface Reaction- (2007)
  • Author(s): K. Shiraishi
  • Organizer: 14th International Workshop on the Physics of Semiconductor Devices
  • Place of Presentation: Mumbai, India
• [Presentation] Carbon Nanotube and its Hybrid Structures (2007)
  • Author(s): A. Oshiyama
  • Organizer: 2nd Int. Symposium on Nanometer-Scale Quantum Physics (nanoPHYS07)
  • Place of Presentation: Tokyo
• [Presentation] Recent Progress in Understanding the Mechanism of Shottoky Barrier Height Formation at Various Interfaces (2007)
  • Author(s): K. Shiraishi, T. Nakayama, S. Okada, S. Miyazaki, H. Watanabe, Y. Akasaka, T. Chikyow, Y. Nara, K. Yamada
  • Organizer: International Symposium on Theories of Organic-Metal Interfaces 2007
  • Place of Presentation: Suita, Osaka, Japan
• [Presentation] Theoretical Studies on Metal/.High-k Gate Stacks (2007)
  • Author(s): K. Shiraishi, Y. Akasaka, G. Nakamura, T. Nakayama, S.Miyazaki, H.Watanabe, A.Ohta, K. Ohmori, T. Chikyow, Y. Nara, K.Yamabe, and K. Yamada
  • Organizer: 211th Meeting of Electrochemical Society
  • Place of Presentation: Chicago, USA
• [Presentation] Schottky barrier and stability of metal/high-k interfaces; theoretical view (2007)
  • Author(s): T. Nakayama
  • Organizer: Int. Conf. Solid State Devices and Materials
  • Place of Presentation: Tsukuba, Japan.
• [Presentation] How can first principles calculations give large contributions to industries? (2007)
  • Author(s): K., Shiraishi
  • Organizer: ISSP International Workshiop/Symposium on Foundation and Application of Density Functional Theory
  • Place of Presentation: Kashiwa, Japan
• [Presentation] Theoretical Studies on Fermi Level Pining of Hf-Based High-K Gate Stacks Based on Thermodynamics (2007)
  • Author(s): K., Shiraishi・Y., Akasaka・G., Nakamura・T., Nakayama・S., Miyazaki・H., Watanabe・A., Ohta・K., Ohmori・T., Chikyow・Y., Nara・K., Yamada
  • Organizer: 212th Meeting of Electrochemical Society
  • Place of Presentation: Washington D. C., USA
• [Presentation] Interface Properties of Hf-Based High-K Gate Dielectrics -O Vacancies and Interface Reaction (2007)
  • Author(s): K. Shiraishi
  • Organizer: 14th International Workshop on the Physics of Semicon ductor Devices
  • Place of Presentation: Mumbai, India
• [Presentation] Theory of Fermi Level Pinning of High-k Dielectrics (2006)
  • Author(s): K. Shiraishi, H. Takeuchi, Y. Akasaka, H. Watanabe, N. Umezawa, T. Chikyow, Y. Nara, T. -J. King Liu, K. Yamada
  • Organizer: 2006 International Conference on Simulation of Semiconductor Process and Devices
  • Place of Presentation: Monterey, CA, USA
• [Presentation] Physics of interfaces between gate electrodes and high-k dielectrics (2006)
  • Author(s): K. Shiraishi, H. Takeuchi, Y. Akasaka, T. Nakayama, S. Miyazaki, T. Nakaoka, A. Ohta, H. Watanabe, N. Umezawa, K. Ohmori, P. Ahmet, K. Toii, T. Chikyow, Y. Nara, T-J. King Liu, H. Iwai, K. Yamada
  • Organizer: 8th International Conference on Solid-State and Integrated-Circuit Technology
  • Place of Presentation: Shanghai, China
• [Presentation] Physics of Metal/High-k Interfaces (2006)
  • Author(s): T. Nakayama, K. Shiraishi, S. Miyazaki, Y. Akasaka, K. Torii, P. Ahmet, K. Ohmori, N. Umezawa, H. Watanabe, T. Chikyow, Y. Nara, H. Iwai, K. Yamada
  • Organizer: Fourth International Symposium on High Dielectric Constant Gate Stacks at the 210th Meeting of Electrochemical Society
  • Place of Presentation: Cancun, Mexico
• [Presentation] What Happen at High-k Dielectric Interfaces? (2006)
  • Author(s): K. Shiraishi, T. Nakayama, Y. Akasaka, H. Takeuchi, S. Miyazaki, N. Umezawa, G. Nakamura, A. Ohta, T. Nakaoka, H. Watanabe, K. Yamabe, K. Ohmori, P. Ahmet, T. Chikyow, Y. Nara, H. Iwai, K. Yamada
  • Organizer: 37th IEEE Semiconductor Interface Specialist Conference
  • Place of Presentation: San Diego, CA, USA
• [Presentation] Atomic and Electronic Structures of Carbon nanotubes on Si and Metal Surfaces (2006)
  • Author(s): A. Oshiyama
  • Organizer: 9th Asian Workshop on First-Principles Electronic-Structure Calculations
  • Place of Presentation: Seoul, KOREA
• [Remarks] 研究項目A04の宮崎教授グループと20年度だけで、計23件の共同研究発表を行った。これは特定領域研究の組織を最大限に有効利用したものである。