| Project/Area Number |
18063004
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| Research Category |
Grant-in-Aid for Scientific Research on Priority Areas
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| Allocation Type | Single-year Grants |
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| Review Section |
Science and Engineering
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| Research Institution | University of Tsukuba |
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Principal Investigator |
SANO Nobuyuki University of Tsukuba, 大学院・数理物質科学研究科, 教授 (90282334)
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| Research Collaborator |
NAKANISHI Kohei 筑波大学, 大学院・数理物質科学研究科, 博士
SHIBANO Nozomi 筑波大学, 大学院・数理物質科学研究科, 博士
YOSHIDA Katsuhisa 筑波大学, 大学院・数理物質科学研究科, 博士
KARASAWA Takahiko 筑波大学, 大学院・数理物質科学研究科, 博士
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| Project Period (FY) |
2006 – 2009
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| Project Status |
Completed (Fiscal Year 2009)
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| Budget Amount *help |
¥46,600,000 (Direct Cost: ¥46,600,000)
Fiscal Year 2009: ¥11,900,000 (Direct Cost: ¥11,900,000)
Fiscal Year 2008: ¥11,900,000 (Direct Cost: ¥11,900,000)
Fiscal Year 2007: ¥11,400,000 (Direct Cost: ¥11,400,000)
Fiscal Year 2006: ¥11,400,000 (Direct Cost: ¥11,400,000)
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| Keywords | 電子デバイス / 集積回路 / ボルツマン輸送方程式 / 電子輸送 / モンテカルロ法 / 半導体デバイス / デバイス・シミュレーション / クーロン相互作用 / 特性ばらつき / 半導体特性 / 半導体物性 / 非平衡グリーン関数法 / ボルツマン方程式 / 量子輸送 |
|---|
| Research Abstract |
The discreteness of doped impurities and electrons in nano-scale MOSFETs become important because of the decrease in number of particles in such devices. In order to study such phenomena associated with discreteness, we have successfully developed the 3-D Monte Carlo simulator which takes account of the full Coulomb interaction among charged particles. The physical mechanism of electrons transport and device characteristics under nano-scale device structures have been studied via the Monte Carlo simulations.
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