• Search Research Projects
  • Search Researchers
  • How to Use
  1. Back to previous page

Control of physical properties induced in silicon nanostructure and device applications

Research Project

Project/Area Number 18063007
Research Category

Grant-in-Aid for Scientific Research on Priority Areas

Allocation TypeSingle-year Grants
Review Section Science and Engineering
Research InstitutionTokyo University of Agriculture and Technology

Principal Investigator

KOSHIDA Nobuyoshi  Tokyo University of Agriculture and Technology, 大学院・工学府, 特任教授 (50143631)

Co-Investigator(Kenkyū-buntansha) SHIRAKASHI Junichi  東京農工大学, 大学院・共生科学技術研究, 准教授 (00315657)
GELLOZ Bernard  東京農工大学, 大学院・共生科学技術研究, 助教 (40343157)
Project Period (FY) 2006 – 2009
Project Status Completed (Fiscal Year 2009)
Budget Amount *help
¥41,600,000 (Direct Cost: ¥41,600,000)
Fiscal Year 2009: ¥9,900,000 (Direct Cost: ¥9,900,000)
Fiscal Year 2008: ¥9,900,000 (Direct Cost: ¥9,900,000)
Fiscal Year 2007: ¥10,900,000 (Direct Cost: ¥10,900,000)
Fiscal Year 2006: ¥10,900,000 (Direct Cost: ¥10,900,000)
Keywordsナノ構造 / シリコン / 量子サイズ効果 / 発光 / 光集積 / 弾道電子 / 超音波放出 / 表面終端 / 可視発光 / 弾道電子効果 / 電子デバイス / 集積回路 / 熱音響効果
Research Abstract

The physical properties induced in quantum-sized silicon have been studied, including their applications. Major results are summarized as follows.
(1) Luminescence: The blue emission was enhanced by high quality oxidation, and then bluephosphorescence was generated. As a related photonic effect, avalanche photoconduction was observed.
(2) Ballistic electron emission: The usefulness has been confirmed in various media: parallel EBlithography and highly sensitive image-pickup in vacuum, VUV light emission in atmospheric pressureXe gas ambience, and hydrogen gas generation and thin solid film deposition in solutions.
(3) Sound emission: It was demonstrated that the emitter is compatible with the use as 3-D objectsensing probe, non-contact actuator, digital speaker, and bio-acoustic communication.

Report

(6 results)
  • 2009 Annual Research Report   Final Research Report ( PDF )
  • 2008 Annual Research Report   Self-evaluation Report ( PDF )
  • 2007 Annual Research Report
  • 2006 Annual Research Report
  • Research Products

    (204 results)

All 2010 2009 2008 2007 2006 Other

All Journal Article (104 results) (of which Peer Reviewed: 46 results) Presentation (79 results) Book (9 results) Remarks (5 results) Patent(Industrial Property Rights) (7 results)

  • [Journal Article] Development of dry-processed silicon nano-dot planar cold cathode and its electron emission properties2010

    • Author(s)
      Y. Hirano, M. Nanba, N. Egami, S. Yamazaki, N. Koshida
    • Journal Title

      J. Vac. Sci. Technol. B28

    • Related Report
      2009 Final Research Report
  • [Journal Article]2010

    • Author(s)
      T. Nakada, T. Sato, Y. Matsuba, K. Sakemura, Y. Okuda, N. Negishi, A. Watanabe, T. Yoshikawa, K. Ogasawara, M. Nanba, K. Tanioka, N. Egami, A. Kobayashi, N. Koshida
    • Journal Title

      J. Vac. Sci. Technol. B28

    • Related Report
      2009 Final Research Report
  • [Journal Article] Direct excitation of xenon by ballistic electrons emitted from nanocrystalline silicon planar cathode and vacuum-ultraviolet light emission2010

    • Author(s)
      T. Ichihara, T. Hatai, N. Koshida
    • Journal Title

      J. Soc. Information Display 18

      Pages: 223-227

    • Related Report
      2009 Final Research Report
  • [Journal Article] Multiple energy transfer in porous silicon/Rh6G/RhB nanocomposite evidenced byphotoluminescence and its polarization memory2010

    • Author(s)
      A. Chouket, H. Elhouichet, H. Koyama, B. Gelloz, M. Oueslati, N. Koshida
    • Journal Title

      Thin Solid Films 518

    • Related Report
      2009 Final Research Report
  • [Journal Article] Development of dry-processed silicon nano-dot planar cold cathode and its electron emission properties2010

    • Author(s)
      Y.Hirano, M.Nanba, N.Egami, S.Yamazaki, N.Koshida
    • Journal Title

      J.Vac.Sci.Technol.B 28

    • Related Report
      2009 Annual Research Report
    • Peer Reviewed
  • [Journal Article] 2/3-inch ultra-high-sensitivity image sensor with active-matrix high-efficiency electron emission device2010

    • Author(s)
      T.Nakada, T.Sato, Y.Matsuba, K.Sakemura Y.Okuda, N.Negishi, A.Watanabe, T.Yoshikawa K.Ogasawara, M.Nanba K.Tanioka, N.Egami, A.Kobayashi, N.Koshida
    • Journal Title

      J.Vac.Sci.Technol.B 28

    • Related Report
      2009 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Direct excitation of xenon by ballistic electrons emitted from nanocrystalline silicon planar cathode and vacuum-ultraviolet light emission(Invited)2010

    • Author(s)
      T.Ichihara, T.Hatai, N.Koshida
    • Journal Title

      J.Soc.Information Display 18

      Pages: 223-227

    • Related Report
      2009 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Multiple energy transfer in porous silicon/Rh6G/RhB nanocomposite evidenced by photoluminescence and its polarization memory2010

    • Author(s)
      A.Chouket, H.Elhouichet, H.Koyama, B.Gelloz, M.Oueslati, N.Koshida
    • Journal Title

      Thin Solid Films 518

    • Related Report
      2009 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Quasi-ballistic electron transport through silicon nanocrystals2009

    • Author(s)
      N. Mori, H. Minari, S. Uno, H. Mizuta, N Koshida
    • Journal Title

      J. Phys. Conf. Ser. 193

      Pages: 12008-12011

    • Related Report
      2009 Final Research Report
  • [Journal Article] Scratching properties of nickel-iron thin film and silicon using atomic force microscopy2009

    • Author(s)
      A.A. Tseng, J. Shirakashi, S. Nishimura, K. Miyashita, A. Notargiacomo
    • Journal Title

      J. Appl. Phys. 106

      Pages: 44314-44314

    • Related Report
      2009 Final Research Report
  • [Journal Article] Magnetoresistance properties of planar-type tunnel junctions with ferromagnetic nanogap system fabricated by electromigration method2009

    • Author(s)
      Y. Tomoda, K. Takahashi, M. Hanada, W. Kume, S. Itami, T. Watanabe, J. Shirakashi
    • Journal Title

      IEEE Trans. Mag. 45

      Pages: 3480-3483

    • Related Report
      2009 Final Research Report
  • [Journal Article] Avalanche multiplication of photo-carriers in nanometer-sized silicon dot layers2009

    • Author(s)
      Y Hirano, K Okamoto, S Yamazaki, N. Koshida
    • Journal Title

      Appl. Phys. Lett. 95

      Pages: 63109-63111

    • Related Report
      2009 Final Research Report
  • [Journal Article] Effect of high-pressure water-vapor annealing on energy transfer in dye-impregnated porous silicon2009

    • Author(s)
      A. Chouket, B. Gelloz, H. Koyama, H. Elhouichet1, M. Oueslati1, N. Koshida
    • Journal Title

      J. Luminescence 129

      Pages: 1332-1335

    • Related Report
      2009 Final Research Report
  • [Journal Article] Long-lived blue phosphorescence of oxidized and annealed nanocrystalline silicon2009

    • Author(s)
      B. Gelloz, N. Koshida
    • Journal Title

      Appl. Phys. Lett. 94

      Pages: 201903-2019005

    • Related Report
      2009 Final Research Report
  • [Journal Article] Enhanced output current density of an active-matrix high-efficiency electron emission device (HEED) array with 13. 75μm pixels2009

    • Author(s)
      T. Nakada, T. Sato, Y. Matsuba, R. Tanaka, K. Sakemura, N. Negishi, Y. Okuda, A. Watanabe, T. Yoshikawa, K. Ogasawara, M. Nanba, K. Tanioka, N. Egami, N. Koshida
    • Journal Title

      J. Vac. Sci. Technol. B27

      Pages: 735-739

    • Related Report
      2009 Final Research Report
  • [Journal Article] Vacuum-ultraviolet light emission from xenon directly excited by ballistic output electrons of nanocrystalline silicon planar cathode2009

    • Author(s)
      T. Ichihara, T. Hatai, N. Koshida
    • Journal Title

      J. Vac. Sci. Technol. B27

      Pages: 772-774

    • Related Report
      2009 Final Research Report
  • [Journal Article] Specific blue light emission from nanocrystalline porous Si treated by high pressure water vapor annealing2009

    • Author(s)
      B. Gelloz, R. Mentek, N. Koshida
    • Journal Title

      Jpn. J. Appl. Phys. 48

    • NAID

      210000066630

    • Related Report
      2009 Final Research Report
  • [Journal Article] ナノ結晶シリコン電子源の新しい応用展開2009

    • Author(s)
      越田信義
    • Journal Title

      応用物理 78

      Pages: 329-332

    • NAID

      10024751517

    • Related Report
      2009 Annual Research Report 2009 Final Research Report
  • [Journal Article] Quasi-ballistic electron transport through silicon nanocrystals2009

    • Author(s)
      N.Mori, H.Minari S.Uno, H.Mizuta, N Koshida
    • Journal Title

      J.Phys.Conf.Ser. 193

      Pages: 12008-12011

    • Related Report
      2009 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Avalanche multiplication of photo-carriers in nanometer-sized silicon dot layers2009

    • Author(s)
      Y.Hirano, K.Okamoto, S.Yamazaki, N.Koshida
    • Journal Title

      Appl.Phys.Lett. 95

      Pages: 63109-63111

    • Related Report
      2009 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Effect of high-pressure water-vapor annealing on energy transfer in dye-impregnated porous silicon2009

    • Author(s)
      A.Chouket, B.Gelloz, H.Koyama, H.Elhouichet, M.Oueslati, N.Koshida
    • Journal Title

      J.Luminescence 129

      Pages: 1332-1335

    • Related Report
      2009 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Long-lived blue phosphorescence of oxidized and annealed nanocrystalline silicon2009

    • Author(s)
      B.Gelloz, N.Koshida
    • Journal Title

      Appl.Phys.Lett. 94

      Pages: 201903-201905

    • Related Report
      2009 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Enhanced output current density of an active-matrix high-efficiency electron emission device(HEED)array with 13.75μm pixels2009

    • Author(s)
      T.Nakada, T.Sato, Y.Matsuba, R.Tanaka, K.Sakemura, N.Negishi, Y.Okuda, A.Watanabe, T.Yoshikawa, K.Ogasawara, M.Nanba, K.Tanioka, N.Egami, N.Koshida
    • Journal Title

      J.Vac.Sci.Technol.B 27

      Pages: 735-739

    • Related Report
      2009 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Vacuum-ultraviolet light emission from xenon directly excited by ballistic output electrons of nanocrystalline silicon planar cathode2009

    • Author(s)
      T.Ichihara, T.Hatai, N.Koshida
    • Journal Title

      J.Vac.Sci.Technol.B 27

      Pages: 772-774

    • Related Report
      2009 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Specific blue light emission from nanocrystalline porous Si treated by high pressure water vapor annealing2009

    • Author(s)
      B.Gelloz, R.Mentek, N.Koshida
    • Journal Title

      Jpn.J.Appl.Phys. 48

    • NAID

      210000066630

    • Related Report
      2009 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Nanomachining of Permalloy for Fabricating Nanoscale Ferromagnetic Structures Using Atomic Force Microscopy2009

    • Author(s)
      A.A.Tseng, J.Shirakashi, S.Nishimura, K.Miyashita, Z.Li
    • Journal Title

      J.Vac.Sci.Technol.B 10

      Pages: 456-466

    • Related Report
      2009 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Magnetoresistance Properties of Planar-Type Tunnel Junctions with Ferromagnetic Nanogap System Fabricated by Electromigration Method2009

    • Author(s)
      Y.Tomoda, K.Takahashi, M.Hanada, W.Kume, S.Itami, T.Watanabe, J.Shirakashi
    • Journal Title

      IEEE Trans.Mag. 45

      Pages: 3480-3483

    • Related Report
      2009 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Control of channel resistance on metal nanowires by electromigration patterning method2009

    • Author(s)
      K.Takahashi, Y.Tomoda, S.Itami, J.Shirakashi
    • Journal Title

      J.Vac.Sci.Technol.B 27

      Pages: 805-809

    • Related Report
      2009 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Micrometer-scale local-oxidation lithography using scanning probe microscopy2008

    • Author(s)
      S. Nishimura, T. Ogino, J. Shirakashi
    • Journal Title

      Jpn. J. Appl. Phys. 47

      Pages: 715-717

    • Related Report
      2009 Final Research Report
  • [Journal Article] Local oxidation of Si surfaces by tapping-mode scanning probe microscopy: Size dependence of oxide wires on dynamic properties of cantilever2008

    • Author(s)
      S. Nishimura, T. Ogino, Y. Takemura, J. Shirakashi
    • Journal Title

      Jpn. J. Appl. Phys. 47

      Pages: 718-720

    • Related Report
      2009 Final Research Report
  • [Journal Article] Measurement of reaction current during atomic force microscope local oxidation of conductive surfaces capped with insulating layers2008

    • Author(s)
      Y. Shimada, T. Yamada an J. Shirakashi
    • Journal Title

      Jpn. J. Appl. Phys. 47

      Pages: 768-770

    • Related Report
      2009 Final Research Report
  • [Journal Article] Scratch nanolithography on Si surface using scanning probe microscopy: Influence of scanning parameters on groove size2008

    • Author(s)
      T. Ogino, S. Nishimura, J. Shirakashi
    • Journal Title

      Jpn. J. Appl. Phys. 47

      Pages: 712-714

    • Related Report
      2009 Final Research Report
  • [Journal Article] Polarization memory of blue and red luminescence from nanocrystalline porous silicon treated by high-pressure water vapor annealing2008

    • Author(s)
      B. Gelloz, H. Koyama, N. Koshida
    • Journal Title

      Thin Solid Films 517

      Pages: 376-379

    • Related Report
      2009 Final Research Report
  • [Journal Article] Stabilized porous silicon optical superlattices with controlled surface passivation2008

    • Author(s)
      M. Ghulinyan, B. Gelloz, T. Ohta, L. Pavesi, D.J. Lockwood, N. Koshida
    • Journal Title

      Appl. Phys. Lett. 93

      Pages: 61113-61115

    • Related Report
      2009 Final Research Report
  • [Journal Article] Improved Photoconduction Effects of Nanometer-sized Si dot multilayers2008

    • Author(s)
      Y. Hirano, S. Yamazaki, N. Koshida
    • Journal Title

      Jpn. J. Appl. Phys. 47

      Pages: 3095-3098

    • NAID

      10022551826

    • Related Report
      2009 Final Research Report
  • [Journal Article] Specific spectral features in electron emission from nanocrystalline poly-silicon quasi-ballistic cold cathode detected by an angle-resolved high resolution analyzer2008

    • Author(s)
      D. Sakai, C. Oshima, T. Ohta, N. Koshida
    • Journal Title

      J. Vac. Sci. Technol. B26

      Pages: 1782-1786

    • Related Report
      2009 Final Research Report
  • [Journal Article] Sub-30 nm parallel EB lithography using nano-Si planar ballistic electron emitter2008

    • Author(s)
      A Kojima, H. Ohyi, N. Koshida
    • Journal Title

      J. Vac. Sci. Technol. B26

      Pages: 2053-2057

    • Related Report
      2009 Final Research Report
  • [Journal Article] Development of a super-high sensitive image sensor using 640×480 pixel active-matrix high-efficency electrion emission device2008

    • Author(s)
      N. Negishi, T. Sato, Y. Matsuba, R. Tanaka, T. Nakada, K. Sakemura, Y. Okuda, A. Watanabe, T. Yoshikawa, K. Ogasawara, M. Nanba, S. Okazaki, K. Tanioka, N. Egami, N. Koshida
    • Journal Title

      J. Vac. Sci. Technol. B26

      Pages: 711-715

    • Related Report
      2009 Final Research Report
  • [Journal Article] Characteristics of nanosilicon ballistic cold cathode in liquids as an active electrode2008

    • Author(s)
      T. Ohta, B. Gelloz, N Koshida
    • Journal Title

      J. Vac. Sci. Technol. B26

      Pages: 716-719

    • Related Report
      2009 Final Research Report
  • [Journal Article] Acoustic wave manipulation by phased operation of two-dimensionally arrayed nanocrystalline silicon ultrasonic emitters2008

    • Author(s)
      B. Gelloz, M. Sugawara, N. Koshida
    • Journal Title

      Jpn. J. Appl. Phys. 47

      Pages: 3123-3126

    • NAID

      10022551893

    • Related Report
      2009 Final Research Report
  • [Journal Article] Cavity effect in nanocrystalline porous silicon ballistic lighting device2008

    • Author(s)
      B. Gelloz, M. Sato, N. Koshida
    • Journal Title

      Jpn. J. Appl. Phys. 47

      Pages: 2902-2905

    • NAID

      10022548317

    • Related Report
      2009 Final Research Report
  • [Journal Article] Stabilized porous silicon optical superlattices with controlled surface passivation2008

    • Author(s)
      M. Ghulinyan, B. Gelloz, T. Ohta, L. Pavesi, D.J. Lockwood, and N. Koshida
    • Journal Title

      Appl. Phys. Lett 93

      Pages: 61113-115

    • Related Report
      2008 Self-evaluation Report
    • Peer Reviewed
  • [Journal Article] Specific spectral features in electron emission from nanocrystalline poly-silicon quasi-ballistic cold cathode detected by an angle-resolved high resolution analyzer2008

    • Author(s)
      D. Sakai, C. Oshima, T. Ohta, and N. Koshida
    • Journal Title

      J. Vac. Sci. Technol B 26 (5)

      Pages: 1782-1786

    • Related Report
      2008 Self-evaluation Report
    • Peer Reviewed
  • [Journal Article] Sub-30 nm Parallel EB Lithography using Nano-Si Planar Ballistic Electron Emitter2008

    • Author(s)
      A Kojima, H. Ohyi, N. Koshida
    • Journal Title

      J. Vac. Sci. Technol.・Sci. Technol B 26(6)・B 26

    • Related Report
      2008 Self-evaluation Report
    • Peer Reviewed
  • [Journal Article] Characteristics of nanosilicon ballistic cold cathode in liquids as an active electrode2008

    • Author(s)
      T. Ohta, B. Gelloz, and N Koshida
    • Journal Title

      J. Vac. Sci. Technol B 26

      Pages: 716-719

    • Related Report
      2008 Self-evaluation Report
    • Peer Reviewed
  • [Journal Article] Improved photoconduction effects of nanometer-sized Si dot multilayers2008

    • Author(s)
      Y. Hirano, S. Yamazaki, and N. Koshida
    • Journal Title

      Jpn. J. Appl. Phys 47

      Pages: 3095-3098

    • NAID

      10022551826

    • Related Report
      2008 Self-evaluation Report
    • Peer Reviewed
  • [Journal Article] Acoustic Wave manipulation by phased operation of two-dimensionally arrayed nanocrystalline silicon ultrasonic emitters2008

    • Author(s)
      B. Gelloz, M. Sugawara and N. Koshida
    • Journal Title

      Jpn. J. Appl. Phys 47

      Pages: 3123-3126

    • NAID

      10022551893

    • Related Report
      2008 Self-evaluation Report
    • Peer Reviewed
  • [Journal Article] Stabilized porous silicon optical superlattices with controlled surface passivation2008

    • Author(s)
      A. Chouket, H. Elhouichet, M. Oueslati, H. Koyama, B. Gelloz, and N. Koshida
    • Journal Title

      Appl. Phys. Lett. 93

      Pages: 61113-115

    • Related Report
      2008 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Sub-30 nm parallel EB lithography using nano-Si planar ballistic electron emitter2008

    • Author(s)
      A Kojima, H. Ohyi, N. Koshida
    • Journal Title

      J. Vac. Sci. Technol. B 26

      Pages: 2053-2057

    • Related Report
      2008 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Specific spectral features in electron emission from nanocrystalline poly-silicon quasi-ballistic cold cathode detected by an angle-resolved high resolution analyzer2008

    • Author(s)
      D. Sakai, C. Oshima, T. Ohta, and N. Koshida
    • Journal Title

      J. Vac. Sci. Technol. B 26

      Pages: 1782-1786

    • Related Report
      2008 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Development of a super-high sensitive image sensor using 640×480 pixel active-matrix high-efficency electrion emission device2008

    • Author(s)
      N. Negishi, T. Sato, Y. Matsuba, R. Tanaka, T. Nakada, K. Sakemura, Y. Okuda, A. Watanabe, T. Yoshikawa, K. Ogasawara, M. Nanba, g. Okazaki, K. Tanioka, N. Egami, and N. Koshida
    • Journal Title

      J. Vac. Sci. Technol. B 26

      Pages: 711-715

    • Related Report
      2008 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Characteristics of nanosilicon ballistic cold cathode in liquids as an active electrode2008

    • Author(s)
      T. Ohta, B. Gelloz, and N Koshida
    • Journal Title

      J. Vac. Sci. Technol. B 26

      Pages: 716-719

    • Related Report
      2008 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Acoustic wave manipulation by phased operation of two-dimensionally arrayed nanocrystalline silicon ultrasonic emitters2008

    • Author(s)
      B. Gelloz, M. Sugawara and N. Koshida
    • Journal Title

      Jpn. J. Appl. Phys. 47

      Pages: 3123-3126

    • NAID

      10022551893

    • Related Report
      2008 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Cavity effect in nanocrystalline porous silicon ballistic lighting device2008

    • Author(s)
      B. Gelloz, M. Sato and N, Koshida
    • Journal Title

      Jpn. J. Appl. Phys. 47

      Pages: 2902-2905

    • NAID

      10022548317

    • Related Report
      2008 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Improved photoconduction effects of nanometer-sized Si dot multilayers2008

    • Author(s)
      Y. Hirano, S. Yamazaki, and N. Koshida
    • Journal Title

      Jpn. J. Appl. Phys. 47

      Pages: 3095-3098

    • NAID

      10022551826

    • Related Report
      2008 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Polarization memory of blue and red luminescence from nanocrystalline porous silicon treated by high-pressure water vapor annealing2008

    • Author(s)
      B. Gelloz, H. Koyama and N, Koshida
    • Journal Title

      Thin Solid Films 517

      Pages: 376-379

    • Related Report
      2008 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Formation Mechanism of 100 nm-Scale Periodic-Structures in Silicon Using Magnetic-Field-Assisted Anodization2008

    • Author(s)
      D. Hippo, K. Urakawa, Y. Tsuchiya, H. Mizuta, N. Koshida, and S. Oda
    • Journal Title

      Jpn. J. Appl. Phys. 47

      Pages: 7398-7402

    • Related Report
      2008 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Scratch nanolithography on Si surface using scanning probe microscopy : Influence of scanning parameters on groove size2008

    • Author(s)
      T. Ogino, S. Nishimura, and J. Shirakashi
    • Journal Title

      Jpn. J. Appl. Phys. 47

      Pages: 712-714

    • Related Report
      2008 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Micrometer-scale local-oxidation lithography using scanning probe microscopy2008

    • Author(s)
      S. Nishimura, T. Ugino, and J. Shirakashi
    • Journal Title

      Jpn. J. Appl. Phys. 47

      Pages: 715-717

    • Related Report
      2008 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Local oxidation of Si surfaces by tapping-mode scanning probe microscopy : Size dependence of oxide wires on dynamic properties of cantilever2008

    • Author(s)
      S. Nishimura, T. Ogino, Y. Takemura, and J. Shirakashi
    • Journal Title

      Jpn. J. Appl. Phys. 47

      Pages: 718-720

    • Related Report
      2008 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Measurement of reaction current during atomic force microscope local oxidation of conductive surfaces capped with insulating layers2008

    • Author(s)
      Y. Shimada, T. Yamada, and J. Shirakashi
    • Journal Title

      Jpn. J. Appl. Phys. 47

      Pages: 768-770

    • Related Report
      2008 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Highly efficient and stable photoluminescence of nanocrystalline porous silicon by combination of chemical modification and oxidation under high pressure2007

    • Author(s)
      Gelloz, N. Koshida
    • Journal Title

      Jpn. J. Appl. Phys. 46

      Pages: 3462-3465

    • Related Report
      2009 Final Research Report
  • [Journal Article] Energy transfer in porous-silico/laser-dye composite evidenced by polarization memory of photoluminescence2007

    • Author(s)
      A. Chouket, H. Elhouichet, M. Oueslati, H. Koyama, B. Gelloz, N. Koshida
    • Journal Title

      Appl. Phys. Lett. 91

    • Related Report
      2009 Final Research Report
  • [Journal Article] Stabilization of nano-crystalline porous silicon electroluminescence by high pressure water vapor annealing2007

    • Author(s)
      B. Gelloz, T. Shibata, N. Koshida
    • Journal Title

      physica status solidi (a) Vol.204

      Pages: 2141-2144

    • Related Report
      2009 Final Research Report
  • [Journal Article] Control of tunnel resistance of nanogaps by field-emission-induced electromigration2007

    • Author(s)
      S. Kayashima, K. Takahashi, M. Motoyama, J. Shirakashi
    • Journal Title

      Jpn. J. Appl. Phys. 46

    • NAID

      210000064124

    • Related Report
      2009 Final Research Report
  • [Journal Article] Development of flexible electrochromic device with thin flm configuration2007

    • Author(s)
      H. Yoshimura, T. Sakaguchi, N. Koshida
    • Journal Title

      Jpn. J. Appl. Phys. 46

      Pages: 3479-3481

    • Related Report
      2009 Final Research Report
  • [Journal Article] Emission characteristics of nanocrystalline porous silicon ballistic cold cathode in atmospheric ambience2007

    • Author(s)
      T. Ohta, A. Kojima, N. Koshida
    • Journal Title

      J. Vac. Sci. Technol. B25

      Pages: 524-527

    • Related Report
      2009 Final Research Report
  • [Journal Article] Operation of nanosilicon ballistic electron emitter in liquid water and hydrogen generation effect2007

    • Author(s)
      N. Koshida, T. Ohta, B. Gelloz
    • Journal Title

      Appl. Phys. Lett. 90

      Pages: 163505-7

    • Related Report
      2009 Final Research Report
  • [Journal Article] Development of a high-resolution active-matrix electron emitter array for application to high-sensitivity image sensing2007

    • Author(s)
      N. Negishi, Y. Matsuba, R. Tanaka, T. Nakada, K. Sakemura, Y. Okuda, A. Watanabe, T. Yoshikawa K. Ogasawara, M. Nanba, S. Okazaki, K. Tanioka, N. Egami, N. Koshida
    • Journal Title

      J. Vac. Sci. Technol. B25

      Pages: 661-666

    • Related Report
      2009 Final Research Report
  • [Journal Article] Effect of bi-layer sructure on the long-term stability of nanocrystalline porous silicon ultrasonic emitter2007

    • Author(s)
      Y. Watabe, Y. Honda, N. Koshida
    • Journal Title

      Jpn. J. Appl. Phys. 46

      Pages: 6218-6221

    • Related Report
      2009 Final Research Report
  • [Journal Article] Effects of thermal effusivity in nanocrystalline porous silicon on long-term operation of thermally induced ultrasonic emission2007

    • Author(s)
      Y. Watabe, Y. Honda, N. Koshida
    • Journal Title

      Jpn. J. Appl. Phys. 46

      Pages: 3645-3647

    • NAID

      10022546529

    • Related Report
      2009 Final Research Report
  • [Journal Article] Maternal approaches to pup ultrasonic vocalizations produced by a nanocrystalline silicon thermo-acoustic emitter2007

    • Author(s)
      A. Uematsu, T. Kikusui, T. Kihara, T. Harada, M. Kato, K. Nakano, O. Murakami, N. Koshida, Y. Takeuchi, Y. Mori
    • Journal Title

      Brain Research 1163

      Pages: 91-99

    • Related Report
      2009 Final Research Report
  • [Journal Article] Energy transfer in porous-silicon/laser-dye composite evidinced by polarization memory of photoluminescence.2007

    • Author(s)
      A. Chouket, H. Elhouichet, M. Oueslati, H. Koyama, B. Gelloz, and N. Koshida
    • Journal Title

      Appl. Phys. Lett. 91

      Pages: 2119021-3

    • Related Report
      2007 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Operation of nanosilicon ballistic electron emitter in lipuid water and hydrogen generation effect2007

    • Author(s)
      N. Koshida, T. Ohta, and B. Gelloz
    • Journal Title

      Appl. Phys. Lett. 90

      Pages: 1635051-3

    • Related Report
      2007 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Maternal approaches to pup ultrasonic vocalizations produced by a nanocrystalline silicon thermo-acoustic emitter.2007

    • Author(s)
      A. Uematsu, T. Kikusui, T. Kihara, T. Hanada, M. Kato, K. Nakano, O.Murakami, N.Koshida, Y.Takeuchi, and Y. Mori
    • Journal Title

      Brain Research. 1163

      Pages: 91-99

    • Related Report
      2007 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Development of a high-resolution acteve-matrix electron emitter array for application to high-sensitivity image sensing.2007

    • Author(s)
      N. Negishi, Y. Matsuba, R. Tanaka, T. Nakada, K, Sakemura, Y. Okuda, A. Watanabe, T Yoshikawa, K, Ogasawara, M. Nanba, S. Okazaki, K. Tanioka, N. Egami, and N. Koshida
    • Journal Title

      J. Vac. Sci Technol. B 25

      Pages: 661-666

    • Related Report
      2007 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Emission characteristics of nanocrystalline porous silicon ballistic cold cathode in atmospheric ambience.2007

    • Author(s)
      T. Ohta, A, Kojima, and N. Koshida
    • Journal Title

      J. Vac. Sci. Technol. B 25

      Pages: 524-527

    • Related Report
      2007 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Highly efficient and stable photoluminescence of nanocrystalline porous sillicon by combination of chemical modification and oxidation under high pressure.2007

    • Author(s)
      B. Gelloz and N. Koshida
    • Journal Title

      Jpn. J. Appl. Phys. 46

      Pages: 3462-3465

    • Related Report
      2007 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Stabilization of nano-crystalline porous silicon electroluminescence by high pressure water vapor annealing.2007

    • Author(s)
      B. Gelloz, T. Shibata and N. Koshida
    • Journal Title

      physica status solide(a) 204

      Pages: 2141-2144

    • Related Report
      2007 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Synthesis and photoluminescence properties of silicon nanowires treated by high-pressure water vapor annealing.2007

    • Author(s)
      B. Salhi B. Gelloz, N. Koshida, and R. Boudherroub
    • Journal Title

      Physica status solidi(a) 204

      Pages: 1302-1306

    • Related Report
      2007 Annual Research Report
    • Peer Reviewed
  • [Journal Article] 1インチ256X192画素アクティブ駆動型HEED冷陰極HARP撮像板.2007

    • Author(s)
      難波正和、宮川和典、渡部俊久、岡崎三郎、谷岡健吉、江上典文、田中亮太、中田智成、酒村一伊到、奥田義行、根岸伸安、渡辺温、吉川高正、小笠原清秀、小林昭、小楠功一、越田信義
    • Journal Title

      映像情報メディア学会誌 61

      Pages: 387-392

    • Related Report
      2007 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Effect of bi-layer structure on long-tem stability of nanocrystalline porous silicon ultrasonic emitter.2007

    • Author(s)
      Y. Watabe, Y. Honda, and N. Koshida
    • Journal Title

      Jpn. J. Appl. Phys. 46

      Pages: 6218-6221

    • Related Report
      2007 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Effects of thermal effusivity in nanocrystalline porous silicon on long-term operation of thermally induced ultrasonic emission.2007

    • Author(s)
      Y. Watabe, Y. Honda and N. Koshida
    • Journal Title

      Jpn. J. Appl. Phys. 46

      Pages: 3645-3647

    • NAID

      10022546529

    • Related Report
      2007 Annual Research Report
    • Peer Reviewed
  • [Journal Article] New design principle and fabrication process of silicon 3-dimensional photonic crystal structures.2007

    • Author(s)
      D. Hippo, K. Urakawa, Y. Kawata, Y. Tsuchiya, H. Mizuta, N. Koshida, and S. Oda
    • Journal Title

      Jpn. J. Appl. Phys. 46

      Pages: 633-637

    • Related Report
      2007 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Pronounced Photonic Effects of High-Pressure Water Vapor Annealing on Nanocrystalline Porous Silicon2007

    • Author(s)
      B.Gelloz, T.Shibata, R.Mentek, N.Koshida
    • Journal Title

      Mater. Res. Soc. Symp. Proc. 958

    • Related Report
      2006 Annual Research Report
  • [Journal Article] Synthesis and Optical Properties of Silicon Oxide Nanowires2007

    • Author(s)
      B.Gelloz, Y.Coffinier, B.Salhi, N.Koshida, G.Patriarche, R.Boukherroub
    • Journal Title

      Mater. Res. Soc. Symp. Proc. 958

    • Related Report
      2006 Annual Research Report
  • [Journal Article] 1インチ256×192画素アクティブ駆動型HEED冷陰極HARP撮像板2007

    • Author(s)
      難波正和 他16名
    • Journal Title

      映像情報メディア学会誌 61

      Pages: 387-392

    • Related Report
      2006 Annual Research Report
  • [Journal Article] New design principle and Fabrication Process of Silicon 3-dimensional Photonic Crystal Structures2007

    • Author(s)
      D.Hippo, K.Urakawa, Y.Kawata, Y.Tsuchiya, H.Mizuta, N.Koshida, S.Oda
    • Journal Title

      Jpn. J. Appl. Phys. 46

      Pages: 633-637

    • Related Report
      2006 Annual Research Report
  • [Journal Article] Highly enhanced photoluminescence of as-anodized and electrochemically oxidized nanocrystalline p-type porous silicon treated by high-pressure water vapor annealing2006

    • Author(s)
      B. Gelloz, N. Koshida
    • Journal Title

      Thin Solid Films 508

      Pages: 406-409

    • Related Report
      2009 Final Research Report
  • [Journal Article] Highly enhanced efficiency and stability of photo- and electroluminescence of nano-crystalline porous silicon by high-pressure water vapor annealing2006

    • Author(s)
      B. Gelloz, N. Koshida
    • Journal Title

      Jpn. J. Appl. Phys. 45

      Pages: 3462-3465

    • NAID

      10022541088

    • Related Report
      2009 Final Research Report
  • [Journal Article] Stable electroluminescence of nanocrystalline silicon device activated by high pressure water vapor annealing2006

    • Author(s)
      B. Gelloz, T. Shibata, N. Koshida
    • Journal Title

      Appl. Phys. Lett. 89

      Pages: 191103-5

    • Related Report
      2009 Final Research Report
  • [Journal Article] Fast electrochromic effect obtained from solid-state inorganic thin film configuration with a carrier accumulation structure2006

    • Author(s)
      H. Yoshimura, N. Koshida
    • Journal Title

      Appl. Phys. Lett. 88

      Pages: 93509-11

    • Related Report
      2009 Final Research Report
  • [Journal Article] Acoustic emission characteristics of nanocrystalline porous silicon device driven as an ultrasonic speaker2006

    • Author(s)
      K. Tsubaki, T. Komoda, N. Koshida
    • Journal Title

      Jpn. J. Appl. Phys. 45

      Pages: 3642-3644

    • NAID

      10022542101

    • Related Report
      2009 Final Research Report
  • [Journal Article] Tunable output directivity of thermally induced ultrasonic generator based on nanocrystalline porous silicon2006

    • Author(s)
      Y. Watabe, Y. Honda, N. Koshida
    • Journal Title

      Jpn. J. Appl. Phys. 45

      Pages: 7240-7242

    • Related Report
      2009 Final Research Report
  • [Journal Article] Wafer-compatible fabrication and characteristics of nanocrystalline silicon thermally induced ultrasound emitters2006

    • Author(s)
      T. Kihara, T. Harada, N. Koshida
    • Journal Title

      Sensors and Actuators A: Physical Vol.125

      Pages: 422-428

    • Related Report
      2009 Final Research Report
  • [Journal Article] Appl. Phys. Lett.2006

    • Author(s)
      T. Kihara, T. Harada, M. Kato, K. Nakano, O. Murakami, T. Kikusui, N. Koshida
    • Journal Title

      Appl. Phys. Lett. 88

      Pages: 43902-4

    • Related Report
      2009 Final Research Report
  • [Journal Article] Tunable output directivity of thermally induced ultrasonic generator based on nanocrystalline porous silicon.2006

    • Author(s)
      Y.Watabe, Y.Honda, N.Koshida
    • Journal Title

      Jpn. J. Appl. Phys. 45

      Pages: 7240-7242

    • Related Report
      2006 Annual Research Report
  • [Journal Article] The characteristics of thermally induced ultrasonic emission from nanocrystalline porous silicon device under impulse operation2006

    • Author(s)
      Y.Watabe, Y.Honda, N.Koshida
    • Journal Title

      Jpn. J. Appl. Phys. 45

      Pages: 3645-3647

    • Related Report
      2006 Annual Research Report
  • [Journal Article] Wafer-compatible fabrication and characteristics of nanocrystalline silicon thermally induced ultrasound emitters2006

    • Author(s)
      T.Kihara, T.Harada, N.Koshida
    • Journal Title

      Sensors and Actuators A : Physical 125

      Pages: 422-428

    • Related Report
      2006 Annual Research Report
  • [Journal Article] Highly enhanced photoluminescence of as-anodized and electrochemically oxidized nanocrystalline p-type porous silicon treated by high-pressure water vapor annealing2006

    • Author(s)
      B.Gelloz, N.Koshida
    • Journal Title

      Thin Solid Films 508

      Pages: 406-409

    • Related Report
      2006 Annual Research Report
  • [Journal Article] Fabrication of active-matrix high-efficiency electron emission device and its application to high-sensitivity image sensing2006

    • Author(s)
      N.Negishi, R.Tanaka, T.Nakada, K.Sakemura, Y.Okuda, H.Satoh, A.Watanabe, T.Yoshikawa, K.Ogasawara, M.Nanba, S.Okazaki, K.Tanioka, N.Egami, N.Koshida
    • Journal Title

      J. Vac. Sci. Technol. B 24

      Pages: 1021-1025

    • Related Report
      2006 Annual Research Report
  • [Journal Article] Stable electroluminescence of nanocrystalline silicon device activated by high pressure water vapor annealing2006

    • Author(s)
      B.Gelloz, T.Shibata, N.Koshida
    • Journal Title

      Appl. Phys. Lett. 89

      Pages: 191103-191105

    • Related Report
      2006 Annual Research Report
  • [Journal Article] Acoustic emission characteristics of nanocrystalline porous silicon device driven as an ultrasonic speaker2006

    • Author(s)
      K.Tsubaki, T.Komoda, N.Koshida
    • Journal Title

      Jpn. J. Appl. Phys. 45

      Pages: 3642-3644

    • NAID

      10022542101

    • Related Report
      2006 Annual Research Report
  • [Journal Article] Highly Enhanced Efficiency and Stability of Photo- and Electro-Luminescence of Nano-Crystalline Porous Silicon by High-Pressure Water Vapor Annealing2006

    • Author(s)
      B.Gelloz, N.Koshida
    • Journal Title

      Jpn. J. Appl. Phys. 45

      Pages: 3462-3465

    • NAID

      10022541088

    • Related Report
      2006 Annual Research Report
  • [Presentation] ナノシリコン弾道電子源の溶液中動作によるCu薄膜堆積2010

    • Author(s)
      太田敢行、B.Gelloz、越田信義
    • Organizer
      第57回 応用物理学会関係連合会
    • Place of Presentation
      東海大学、神奈川県
    • Year and Date
      2010-03-17
    • Related Report
      2009 Annual Research Report
  • [Presentation] Functional properties of nanosilicon ballistic electron emitter in vacuum, atmospheric-pressure gases, and solutions2010

    • Author(s)
      T.Ohta, B.Gelloz, N.Koshida
    • Organizer
      Int.Conf.On Porous Semiconductors Science and Technology
    • Place of Presentation
      Valencia, Spain
    • Year and Date
      2010-03-16
    • Related Report
      2009 Annual Research Report
  • [Presentation] Nanosilicon for advanced more-than-moore applications2010

    • Author(s)
      N. Koshida
    • Organizer
      Int. Symp. on Atom-Scale Silicon Hybrid Nanotechnologies for‘More-than-Moore' &‘Beyond CMOS' Era
    • Place of Presentation
      Southampton, UK.(Invited)
    • Year and Date
      2010-03-02
    • Related Report
      2009 Final Research Report
  • [Presentation] Nanosilicon for advanced more-than-moore applications(Invited)2010

    • Author(s)
      越田信義
    • Organizer
      Int.Symp.on Atom-Scale Silicon Hybrid Nanotechnologies for 'More-than-Moore' & 'Beyond CMOS' Era
    • Place of Presentation
      Southampton, UK
    • Year and Date
      2010-03-02
    • Related Report
      2009 Annual Research Report
  • [Presentation] Surface Electron Emission Lithography System based on a planar type Sinanowire array ballistic electron source2010

    • Author(s)
      A.Kojima, T.Ohta, H.Ohi, N.Koshida
    • Organizer
      SPIE Int.Meeting on Advanced Lithography
    • Place of Presentation
      San Jose, USA
    • Year and Date
      2010-02-28
    • Related Report
      2009 Annual Research Report
  • [Presentation] Fabrication and Optical Characterization of Self-standing Wide-gap Nanocrystalline Silicon Layers2009

    • Author(s)
      R.Mentek, B.Gelloz, N.Koshida
    • Organizer
      Int.Conf.Solid State Devices and Mater.
    • Place of Presentation
      Sendai, Miyagi
    • Year and Date
      2009-10-08
    • Related Report
      2009 Annual Research Report
  • [Presentation] Structural and Optical Properties of Electropolymerized Poly(paraphenylene) vinylene Films on Si and Porous Si2009

    • Author(s)
      T. Djenizian, B. Gelloz, F. Dumur, C. Chassigneux, N. Koshida
    • Organizer
      ECS Transactions
    • Place of Presentation
      Wien, Austria.
    • Year and Date
      2009-10-06
    • Related Report
      2009 Final Research Report
  • [Presentation] Structural and Optical Properties of Electropolymerized Poly(paraphenylene)vinylene Films on Si and Porous Si2009

    • Author(s)
      T.Djenizian, B.Gelloz, F.Dumur, C.Chassigneux, N.Koshida
    • Organizer
      ECS 2009 Int.Symp.
    • Place of Presentation
      Wien, Austria
    • Year and Date
      2009-10-06
    • Related Report
      2009 Annual Research Report
  • [Presentation] Specific blue light emission from nanocrystalline porous Si2009

    • Author(s)
      B. Gelloz, R. Mentek, N. Koshida
    • Organizer
      Ext. Abst. 2008 Int. Conf. Solid State Devices and Mater.
    • Place of Presentation
      Sendai
    • Year and Date
      2009-09-25
    • Related Report
      2009 Final Research Report
  • [Presentation] ナノシリコン技術の可能性2009

    • Author(s)
      越田信義
    • Organizer
      日本学術振興会第136委員会研究会
    • Place of Presentation
      弘済会館、東京
    • Year and Date
      2009-09-14
    • Related Report
      2009 Annual Research Report
  • [Presentation] Fabrication of Single-Electron Transistors Using Field-Emission-Induced Electromigration2009

    • Author(s)
      W.Kume, Y.Tomoda, M.Hanada, J.Shirakashi
    • Organizer
      Int.Conf.on Nanosci.and Technol.
    • Place of Presentation
      Beijing, China
    • Year and Date
      2009-09-02
    • Related Report
      2009 Annual Research Report
  • [Presentation] Quasi-ballistic electron transport through silicon nanocrystals2009

    • Author(s)
      N.Mori, H.Minari, S.Uno, H.Mizuta, N Koshida
    • Organizer
      Int.Conf.on Electron Dynamics In Semiconductors
    • Place of Presentation
      Montpellier, France
    • Year and Date
      2009-08-24
    • Related Report
      2009 Annual Research Report
  • [Presentation] Constriction of Ferromagnetic Patterned Thin Film by Scratch Process Using Atomic Force Microscope(Invited)2009

    • Author(s)
      J.Shirakashi
    • Organizer
      International Conference on Composites/Nano Engineering
    • Place of Presentation
      Honolulu, USA
    • Year and Date
      2009-07-26
    • Related Report
      2009 Annual Research Report
  • [Presentation] Illumination effects on the characteristics of nanosilicon ballistic electron emitteras an active electrode2009

    • Author(s)
      T.Ohta, S.Ogawa, B.Gelloz, N.Koshida
    • Organizer
      Int.Vac.Nanoelectronics Conf.
    • Place of Presentation
      Hamamatsu, Shizuoka
    • Year and Date
      2009-07-24
    • Related Report
      2009 Annual Research Report
  • [Presentation] 2/3-inch ultra-high-sensitivity image sensor with active-matrix high-efficiency electron emitter array2009

    • Author(s)
      T.Nakada, et al.
    • Organizer
      Int.Vac.Nanoelectronics Conf.
    • Place of Presentation
      Hamamatsu, Shizuoka
    • Year and Date
      2009-07-24
    • Related Report
      2009 Annual Research Report
  • [Presentation] Operation of nanosilicon ballistic electron emitter in aqueous solutions as an active electrode2009

    • Author(s)
      N. Koshida
    • Organizer
      5th Kurt Schwabe Int. Symp.
    • Place of Presentation
      Erlangen, Germany.(Invited)
    • Year and Date
      2009-05-26
    • Related Report
      2009 Final Research Report
  • [Presentation] Operation of nanosilicon ballistic electron emitter in aqueous solutions as an active electrode(Invited)2009

    • Author(s)
      越田信義
    • Organizer
      5th Kurt Schwabe Int.Symp.
    • Place of Presentation
      Erlangen, Germany
    • Year and Date
      2009-05-25
    • Related Report
      2009 Annual Research Report
  • [Presentation] Magnetoresistance Properties of Planar-Type Tunnel Junctions with Ferromagnetic Nanogap System Fabricated by Electromigration Method2009

    • Author(s)
      J.Shirakashi
    • Organizer
      International Magnetics Conference 2009
    • Place of Presentation
      Sacramento, USA
    • Year and Date
      2009-05-07
    • Related Report
      2009 Annual Research Report
  • [Presentation] ナノシリコン電子源-電子加速機能と応用展開2009

    • Author(s)
      越田信義, 太田敢行, B. Gelloz
    • Organizer
      第6回真空ナノエレクトロニクスシンポジウム
    • Place of Presentation
      大阪(招待講演)
    • Year and Date
      2009-03-04
    • Related Report
      2009 Final Research Report
  • [Presentation] ナノシリコン電子源-電子加速機能と応用展開(招待講演)2009

    • Author(s)
      越田信義N, 太田敢行, B. ジェローズ
    • Organizer
      第6回真空ナノエレクトロニクスシンポジウム
    • Place of Presentation
      大阪
    • Year and Date
      2009-03-04
    • Related Report
      2008 Annual Research Report
  • [Presentation] Sub-30-nm resolution parallel EB lithography based on a planar type Si nanowire array ballistic electron source2009

    • Author(s)
      A Kojima, H. Ohyi, N. Koshida
    • Organizer
      on Alternative Lithographic Technologies
    • Place of Presentation
      San Jose, CA, USA.
    • Year and Date
      2009-02-25
    • Related Report
      2009 Final Research Report
  • [Presentation] Development of efficient broadband digital acoustic device based on nanocrystalline silicon ultrasound emitter2008

    • Author(s)
      N. Koshida, A. Asami, B. Gelloz
    • Organizer
      IEDM Tech. Digest
    • Place of Presentation
      San Francisco, USA.
    • Year and Date
      2008-12-17
    • Related Report
      2009 Final Research Report
  • [Presentation] Development of efficient broadband digital acoustic device based on nanocrystalline silicon ultrasound emitter2008

    • Author(s)
      N. Koshida, A. Asami, and B. Gelloz
    • Organizer
      Int. Electron Device Meeting 2008
    • Place of Presentation
      San Francisco, USA
    • Year and Date
      2008-12-17
    • Related Report
      2008 Annual Research Report
  • [Presentation] Direct Excitation of Xenon by Ballistic Electrons Emitted from Nanocrystalline Silicon Planar Cathode and Vacuum-Ultraviolet Light Emission2008

    • Author(s)
      T. Ichihara, T. Hatai, and N. Koshida
    • Organizer
      Int. Display Workshop 2008
    • Place of Presentation
      Niigata
    • Year and Date
      2008-12-13
    • Related Report
      2008 Annual Research Report
  • [Presentation] Characteristics of thermo-acoustic nanocrystalline porous silicon ultrasound generator as a wide-band tweeter2008

    • Author(s)
      B. Gelloz, A. Asami, N. Koshida
    • Organizer
      Abst Mater. Res. Soc. Fall Meeting
    • Place of Presentation
      Boston, USA.
    • Year and Date
      2008-12-04
    • Related Report
      2009 Final Research Report
  • [Presentation] Activity of nanocrystalline silicon planar ballistic electron emitter in solutions2008

    • Author(s)
      T. Ohta, S. Ogawa, B. Gelloz, and N. Koshida
    • Organizer
      Mater. Res. Soc. Fall Meeting Int. Symposium
    • Place of Presentation
      Boston, USA
    • Year and Date
      2008-12-04
    • Related Report
      2008 Annual Research Report
  • [Presentation] Characteristics of thermo-acoustic nanocrystalline porous silicon ultrasound generator as a wide-band tweeter2008

    • Author(s)
      B. Gelloz, A. Asami and N. Koshida
    • Organizer
      Mater. Res. Soc. Fall Meeting Int. Symposium
    • Place of Presentation
      Boston, USA
    • Year and Date
      2008-12-04
    • Related Report
      2008 Annual Research Report
  • [Presentation] Stabilization of porous silicon free-standing coupled optical microcavities by surface chemical modification2008

    • Author(s)
      B. Gelloz, K. Murata, T. Ohta, M. Ghulinyan, L. Pavesi, D.J. Lockwood, N. Koshida
    • Organizer
      ECS Trans.
    • Place of Presentation
      Honolulu, USA.
    • Year and Date
      2008-10-14
    • Related Report
      2009 Final Research Report
  • [Presentation] Photonic, electronic, and acoustic devices based on nanocrystalline silicon2008

    • Author(s)
      N. Koshida, B. Gelloz
    • Organizer
      Meet. Abstr. ECS 802
    • Place of Presentation
      Honolulu, USA.(Invited)
    • Year and Date
      2008-10-13
    • Related Report
      2009 Final Research Report
  • [Presentation] Photonic, electronic, and acoustic devices based on nanocrystalline silicon (Invited)2008

    • Author(s)
      N. Koshida and B. Gelloz
    • Organizer
      Electrochemical Society Int. Symposium
    • Place of Presentation
      Honolulu, USA
    • Year and Date
      2008-10-13
    • Related Report
      2008 Annual Research Report
  • [Presentation] Enhanced controllability of periodic silicon nanostructures by magnetic field anodization2008

    • Author(s)
      B. Gelloz, M. Masunaga, T. Shirasawa, R. Mentek, T. Ohta, and N. Koshida
    • Organizer
      Electrochemical Society Int. Symposium
    • Place of Presentation
      Honolulu, USA
    • Year and Date
      2008-10-13
    • Related Report
      2008 Annual Research Report
  • [Presentation] Stabilization of porous silicon free-standing coupled optical microcavities by surface chemical modification2008

    • Author(s)
      B. Gelloz, K. Murata, T. Ohta, M. Ghulinyan, L. Pavesi, D. J. Lockwood. and N. Koshida
    • Organizer
      Electrochemical Society Int. Symposium
    • Place of Presentation
      Honolulu, USA
    • Year and Date
      2008-10-13
    • Related Report
      2008 Annual Research Report
  • [Presentation] Optoelectronic effect of high-pressure water vapor annealing for nanocrystalline silicon films prepared by ion implantation2008

    • Author(s)
      B. Gelloz, A. Takeuchi, and N. Koshida
    • Organizer
      5th Int. Conf. on Group IV Photonics
    • Place of Presentation
      Sorento, Italy
    • Year and Date
      2008-09-28
    • Related Report
      2008 Annual Research Report
  • [Presentation] Sound emission from nanocrystalline silicon device under operation of electroluminescence2008

    • Author(s)
      B. Gelloz, T. Shibata and N. Koshida
    • Organizer
      Int. Conf. on Solid State Devices and Materials
    • Place of Presentation
      Tsukuba
    • Year and Date
      2008-09-26
    • Related Report
      2008 Annual Research Report
  • [Presentation] Specific blue light emission from nanocrystalline porous Si, treated by high-pressure water vapor annealing2008

    • Author(s)
      B. Gelloz, R. Mentek and N. Koshida
    • Organizer
      Int. Conf. on Solid State Devices and Materials
    • Place of Presentation
      Tsukuba
    • Year and Date
      2008-09-26
    • Related Report
      2008 Annual Research Report
  • [Presentation] Sound emission from nanocrystalline silicon device under operation of electroluminescence2008

    • Author(s)
      B. Gelloz, T. Shibata, N. Koshida
    • Organizer
      Ext. Abst. Int. Conf. Solid State Devices and Mater.
    • Place of Presentation
      Tsukuba.
    • Year and Date
      2008-09-25
    • Related Report
      2009 Final Research Report
  • [Presentation] Optoelectronic effect of high-pressure water vapor annealing for nanocrystalline silicon films prepared by ion implantation2008

    • Author(s)
      B. Gelloz, A. Takeuchi, N. Koshida
    • Organizer
      5th Int. Conf. on Group IV Photonics
    • Place of Presentation
      Sorrento, Italy.
    • Year and Date
      2008-09-18
    • Related Report
      2009 Final Research Report
  • [Presentation] Hydrogen generation by operation of nanosilicon ballistic electron emitter in aqueous solutions2008

    • Author(s)
      T. Ohta, S. Ogawa, B. Gelloz, N. Koshida
    • Organizer
      Tech. Digest 21th Int. Vac. Nanoelectron. Cof.
    • Place of Presentation
      Wroclaw, Poland.
    • Year and Date
      2008-07-15
    • Related Report
      2009 Final Research Report
  • [Presentation] Hydrogen generation by operation of nanosilicon ballistic electron emitter in aqueous solutions2008

    • Author(s)
      T. Ohta, S. Ogawa, B. Gelloz, and N. Koshida
    • Organizer
      21th Int. Vacuum Nanoelectronics Conference
    • Place of Presentation
      Wroclaw, Poland
    • Year and Date
      2008-07-15
    • Related Report
      2008 Annual Research Report
  • [Presentation] Vacuum-ultraviolet light emission from xenon directly excited by ballistic output electrons of nanocrystalline silicon planar cathode, Tech. Digest, 2008, pp. 58-59.2008

    • Author(s)
      T. Ichihara, T. Hatai and N. Koshida
    • Organizer
      21th Int. Vacuum Nanoelectronics Conference
    • Place of Presentation
      Wroclaw, Poland
    • Year and Date
      2008-07-14
    • Related Report
      2008 Annual Research Report
  • [Presentation] High emission current from an active-matrix HEED with 13.75 mm pixels2008

    • Author(s)
      T. Nakada, T. Sato, Y. Matsuba,R. Tanaka, K. Sakemura, N. Negishi, Y. Okuda, A. Watanabe, T. Yoshikawa, K. Ogasawara, M. Nanba, K. Tanioka, N. Egami, and N. Koshida
    • Organizer
      21th Int. Vac. Nanoelectron. Cof.
    • Place of Presentation
      Wroclaw, Poland
    • Year and Date
      2008-07-14
    • Related Report
      2008 Annual Research Report
  • [Presentation] Photonic, electronic, and acoustic device applications of nanocrystalline Silicon (Invited).2008

    • Author(s)
      N. Koshida and B. Gelloz
    • Organizer
      Int. Conf. on Optical, Optoelectronic and Photonic Mater. and Applications
    • Place of Presentation
      Edmonton, Canada
    • Year and Date
      2008-07-04
    • Related Report
      2008 Annual Research Report
  • [Presentation] Device applications of quantum-sized nanocrystalline silicon2008

    • Author(s)
      N. Koshida and B. Gelloz
    • Organizer
      Int. Conf. On Thin Films and Photonic Materials
    • Place of Presentation
      Argier, Argeria
    • Year and Date
      2008-05-19
    • Related Report
      2008 Annual Research Report
  • [Presentation] Mechanism of one-directional nano etching silicon using magnetic-field-assisted anodization.2008

    • Author(s)
      D. Hippo, K, Urakawa, Y. Tsuchiya, H. Mizuta, N. Koshida, and S. Oda
    • Organizer
      Int. Conf. On Porous Semiconductors Science and Technology
    • Place of Presentation
      Mallorca, Spain
    • Year and Date
      2008-03-13
    • Related Report
      2007 Annual Research Report
  • [Presentation] Polarization memory in enhanced photoluminescence of porous silicon as a trace of energy transfer to embedded laser dye molicules2008

    • Author(s)
      A. Chouket, H. Koyama, B. Gelloz, H. Elhouichet, M. Oueslati, N. Koshida
    • Organizer
      Int Conf. On porous Semiconductors Science and Technology
    • Place of Presentation
      Mallorca, Spain
    • Year and Date
      2008-03-13
    • Related Report
      2007 Annual Research Report
  • [Presentation] Porous silicon technology as a nanodevice platform2008

    • Author(s)
      N. Koshida
    • Organizer
      Int. Conf. On Porous Semiconductors Science and Technology
    • Place of Presentation
      Mallorca, Spain.(Invited)
    • Year and Date
      2008-03-12
    • Related Report
      2009 Final Research Report
  • [Presentation] Photonic characteristics of nanocrystalline porous silicon treated by high-pressure water vapor annealing.2008

    • Author(s)
      B. Gelloz and N. Koshida
    • Organizer
      Int. Conf. On Porous Semiconductors Science and Technology
    • Place of Presentation
      Mallorca, Spain
    • Year and Date
      2008-03-12
    • Related Report
      2007 Annual Research Report
  • [Presentation] Porous silicon technology as a nanodevice platform(Invited)2008

    • Author(s)
      N. Koshida
    • Organizer
      Int Conf. On porous Semiconductors Science and Technology
    • Place of Presentation
      Mallorca, Spain
    • Year and Date
      2008-03-11
    • Related Report
      2007 Annual Research Report
  • [Presentation] Direct Excitation of Xenon by Ballistic Electrons Emitted from Nanocrystalline Silicon Planar Cathode and Vacuum-Ultraviolet Light Emission2008

    • Author(s)
      T. Ichihara, T. Hatai, and N. Koshida
    • Organizer
      Int. Display Workshop
    • Place of Presentation
      Niigata
    • Related Report
      2008 Self-evaluation Report
  • [Presentation] Photonic, electronic, and acoustic devices based on nanocrystalline silicon2008

    • Author(s)
      N. Koshida and B. Gelloz
    • Organizer
      ECS Meet
    • Related Report
      2008 Self-evaluation Report
  • [Presentation] Specific blue light emission from nanocrystalline porous Si, treated by high-pressure water vapor annealing2008

    • Author(s)
      B. Gelloz, R. Mentek and N. Koshida
    • Organizer
      2008 Int. Conf
    • Related Report
      2008 Self-evaluation Report
  • [Presentation] Sound emission from nanocrystalline silicon device under operation of electroluminescence2008

    • Author(s)
      B. Gelloz, T. Shibata and N. Koshida
    • Organizer
      2008 Int. Conf
    • Related Report
      2008 Self-evaluation Report
  • [Presentation] Low voltage and high speed operation of 640X480 pixel active-matrix HEED (high-efficiency eleetron emission device) array for HARP image sensor.2007

    • Author(s)
      Y. Okuda et. al.
    • Organizer
      Int. Display Workshop
    • Place of Presentation
      Sapporo
    • Year and Date
      2007-12-06
    • Related Report
      2007 Annual Research Report
  • [Presentation] Acoustic Wave Manipulation by Phased Operation of Two-Dimensionally Arrayed Nanocrystalline Silicon Ultrasonic Emitters2007

    • Author(s)
      B. Gelloz, M. Sugawara, N. Koshida
    • Organizer
      Int. Conf. on Solid State Devices and Materials
    • Place of Presentation
      Tsukuba
    • Year and Date
      2007-09-21
    • Related Report
      2009 Final Research Report
  • [Presentation] Improved photoconduction effects of nanometer-sized Si dot multilayers.2007

    • Author(s)
      Y. Hirano, S. Yamazaki and N. Koshida
    • Organizer
      Int. Conf. on Solid State Devices and Materials
    • Place of Presentation
      Tsukuba
    • Year and Date
      2007-09-21
    • Related Report
      2007 Annual Research Report
  • [Presentation] Light-emissive nonvolatile memory based on nanocrystalline porous Si2007

    • Author(s)
      B. Gelloz, Y. Yoshida, N. Koshida
    • Organizer
      4th IEEE Int. Conf. on Group IV Photonics
    • Place of Presentation
      Tokyo
    • Year and Date
      2007-09-20
    • Related Report
      2009 Final Research Report
  • [Presentation] Light-emissive nonvolatile memory based on nanocrystalline porous Si.2007

    • Author(s)
      B. Gelloz, Y. Yoshida, N. Koshida
    • Organizer
      4th IEEE Int. Conf. on Group IV Photonics
    • Place of Presentation
      Tokyo
    • Year and Date
      2007-09-20
    • Related Report
      2007 Annual Research Report
  • [Presentation] Cavity Effect in Nanocrystalline Porous Silicon Ballistic Lighting Device2007

    • Author(s)
      B. Gelloz, M. Sato, N. Koshida
    • Organizer
      Int. Conf. on Solid State Devices and Materials
    • Place of Presentation
      Tsukuba.
    • Year and Date
      2007-09-19
    • Related Report
      2009 Final Research Report
  • [Presentation] Cavity effect in nanocrystalline porous silicon ballistic lighting device.2007

    • Author(s)
      B. Gelloz, M. Sato, and N. Koshida
    • Organizer
      Int. Conf. on Solid State Devices and Materials
    • Place of Presentation
      Tsukuba
    • Year and Date
      2007-09-19
    • Related Report
      2007 Annual Research Report
  • [Presentation] Photonic and related device applications of nano-crystalline silicon(Invited.)2007

    • Author(s)
      Koshida and B. Gelloz
    • Organizer
      SPIE Optics East
    • Place of Presentation
      Boston, USA
    • Year and Date
      2007-09-12
    • Related Report
      2007 Annual Research Report
  • [Presentation] Photonic and related device applications of nano-crystalline silicon2007

    • Author(s)
      N. Koshida, B. Gelloz
    • Organizer
      Active and passive Optical Components for Communications VII
    • Place of Presentation
      Boston, USA(Invited)
    • Year and Date
      2007-09-11
    • Related Report
      2009 Final Research Report
  • [Presentation] Photonic, electronic, and acoustic devices based on nanocrystalline silicon2007

    • Author(s)
      N. Koshida, B. Gelloz
    • Organizer
      Optoelectronic and Photonic Mater. and Applications
    • Place of Presentation
      London, UK(Invited)
    • Year and Date
      2007-07-30
    • Related Report
      2009 Final Research Report
  • [Presentation] Characteristics of nanosilicon ballistic cathode in liquids as an active electrode.2007

    • Author(s)
      T. Ohta, B. Gelloz, and N. Koshida
    • Organizer
      Int. Vacuum Nanoelectronics Conf.
    • Place of Presentation
      Chicago, USA
    • Year and Date
      2007-07-11
    • Related Report
      2007 Annual Research Report
  • [Presentation] Development of a super-high sensitive image sensor using 640x480 pixel active-matrix high-efficency electrion emission device (Invited).2007

    • Author(s)
      N. Negishi et. al.
    • Organizer
      Int. Vacuum Nanoelectronics Conf.
    • Place of Presentation
      Chicago, USA
    • Year and Date
      2007-07-11
    • Related Report
      2007 Annual Research Report
  • [Presentation] Characteristics of nanosilicon ballistic cold cathode in liquids as an active electrode2007

    • Author(s)
      T. Ohta, B. Gelloz, N. Koshida
    • Organizer
      Int. Vac. Nanoelectron. Conf.
    • Place of Presentation
      Chicago, USA
    • Year and Date
      2007-07-10
    • Related Report
      2009 Final Research Report
  • [Presentation] Functional Devices Based on Quantum-sized Nanosilicon(Invited), , ,2007

    • Author(s)
      N. Koshida and B. Gelloz
    • Organizer
      2007 Asia-Pasific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices
    • Place of Presentation
      Gyeongiu, Korea
    • Year and Date
      2007-06-25
    • Related Report
      2007 Annual Research Report
  • [Presentation] Polarization memory blue red luminescence from nanocrystalline porous silicon treated by high-pressure water vapor annealing.2007

    • Author(s)
      B. Gelloz, H. Koyama, and N. Koshida
    • Organizer
      5th Int. Conf. on Silicon Epitaxy and Heterostructures
    • Place of Presentation
      Marseille, France
    • Year and Date
      2007-05-24
    • Related Report
      2007 Annual Research Report
  • [Presentation] Polarization memory of blue and red luminescence from nanocrystalline porous silicon treated by high-pressure water vapor annealing2007

    • Author(s)
      B. Gelloz, H. Koyama, N. Koshida
    • Organizer
      5th Int. Conf. on Silicon Epitaxy and Heterostructures
    • Place of Presentation
      Marseille, France
    • Year and Date
      2007-05-22
    • Related Report
      2009 Final Research Report
  • [Presentation] Photonic, electronic, acoustic based on nanocrystalline silicon(Invited).2007

    • Author(s)
      N. Koshida and B. Gelloz
    • Organizer
      Int. Conf. on Optical, Optoelectronic and Photonic Mater. and Applications
    • Place of Presentation
      London, UK
    • Year and Date
      2007-04-30
    • Related Report
      2007 Annual Research Report
  • [Presentation] ナノクリスタルSi発光デバイスの展望2007

    • Author(s)
      越田信義
    • Organizer
      応用物理学会結晶工学分科会第126回研究会
    • Place of Presentation
      東京(招待)
    • Year and Date
      2007-04-26
    • Related Report
      2009 Final Research Report
  • [Presentation] ナノクリスタルSi発光デバイスの展望(招待).2007

    • Author(s)
      越田, 信義
    • Organizer
      応用物理学会結晶工学分科会第126回研究会
    • Place of Presentation
      東京
    • Year and Date
      2007-04-26
    • Related Report
      2007 Annual Research Report
  • [Presentation] Functional properties of nanosilicon and its possible application to image devices2006

    • Author(s)
      N. Koshida
    • Organizer
      Int. Display Workshop
    • Place of Presentation
      Ohtsu(Invited)
    • Year and Date
      2006-12-08
    • Related Report
      2009 Final Research Report
  • [Presentation] Pronounced photonic effects of high-pressure water vapor annealing on nanocrystalline porous silicon2006

    • Author(s)
      B. Gelloz, T. Shibata, R. Mentek, N. Koshida
    • Organizer
      Mater. Res. Soc. Symp.
    • Place of Presentation
      Boston, USA
    • Year and Date
      2006-11-30
    • Related Report
      2009 Final Research Report
  • [Presentation] Synthesis and optical properties of silicon oxide nanowires2006

    • Author(s)
      B. Gelloz, Y. Coffinier, B. Salhi, N. Koshida, G. Patriarche, R. Boukherroub
    • Organizer
      Mater. Res. Soc. Symp.
    • Place of Presentation
      Boston, USA
    • Year and Date
      2006-11-29
    • Related Report
      2009 Final Research Report
  • [Presentation] Blue and Red Luminescence Bands of Nanocrystalline Porous Silicon Induced by High-Pressure Water Vapor Annealing2006

    • Author(s)
      B. Gelloz, N.. Koshida
    • Organizer
      Meet. Abst. Electrochem. Soc.
    • Place of Presentation
      Cancun, Mexico
    • Year and Date
      2006-10-31
    • Related Report
      2009 Final Research Report
  • [Presentation] Functions and Device Applications of Quantum-sized Silicon2006

    • Author(s)
      N. Koshida
    • Organizer
      Int. Conf. on Solid State Devices and Materials
    • Place of Presentation
      Yokohama(Invited)
    • Year and Date
      2006-09-13
    • Related Report
      2009 Final Research Report
  • [Presentation] Luminescence and related functions of nanocrystalline porous silicon2006

    • Author(s)
      N. Koshida
    • Organizer
      International Conference on Optical and Optoelectronic Properties of Materials and Applications
    • Place of Presentation
      Darwin, Australia(Invited)
    • Year and Date
      2006-07-18
    • Related Report
      2009 Final Research Report
  • [Presentation] 量子サイズナノシリコンの光・電子・音響・バイオ機能2006

    • Author(s)
      越田信義
    • Organizer
      電子情報通信学会シリコンフォトニクス研究会
    • Place of Presentation
      東京(招待)
    • Year and Date
      2006-05-12
    • Related Report
      2009 Final Research Report
  • [Presentation] Development of efficient broadband digital acoustic device based on nanocrystalline silicon ultrasound emitter

    • Author(s)
      N. Koshida, A. Asami, and B. Gelloz
    • Organizer
      IEDM 2008 Technical Digest
    • Related Report
      2008 Self-evaluation Report
  • [Book] Device Applications of Silicon Nanocrystals and Nanostructures2009

    • Author(s)
      N. Koshida
    • Total Pages
      348
    • Publisher
      Springer
    • Related Report
      2009 Final Research Report
  • [Book] Device Applications of Silicon Nanocrystals and Nanostructures2009

    • Author(s)
      N.Koshida(Ed.)
    • Total Pages
      348
    • Publisher
      Springer
    • Related Report
      2009 Annual Research Report
  • [Book] Device Applications of Silicon Nanocrystals and Nanostructures2009

    • Author(s)
      N. Koshida, (Ed.)
    • Total Pages
      348
    • Publisher
      Springer, New York
    • Related Report
      2008 Self-evaluation Report
  • [Book] Device Applications of Silicon Nanocrystals and Nanostructures2009

    • Author(s)
      N. Koshida (Ed.)
    • Total Pages
      348
    • Publisher
      Springer, New York
    • Related Report
      2008 Annual Research Report
  • [Book] Luminescence and related properties of nanocrystalline porous silicon(ed. E. Kasper and C. Klingshirn, Semiconductor Quantum Structures)2007

    • Author(s)
      N. Koshida
    • Publisher
      Springer-Verlag
    • Related Report
      2009 Final Research Report
  • [Book] Luminescence and related properties of nanocrystalline porous silicon, in"Semiconductor Quantum Structures"2007

    • Author(s)
      N. Koshida
    • Publisher
      Springer-Verlag, Berlin
    • Related Report
      2007 Annual Research Report
  • [Book] 『ナノ蛍光体の開発と応用』3-1節"Siナノ蛍光体"2007

    • Author(s)
      越田信義
    • Publisher
      シーエムシー、東京
    • Related Report
      2007 Annual Research Report
  • [Book] エコマテリアルハンドブック(III部 第2章 ナノ構造制御材料を担当)2006

    • Author(s)
      越田信義(分担執筆)
    • Total Pages
      816
    • Publisher
      丸善
    • Related Report
      2006 Annual Research Report
  • [Book] 電子物性・材料の事典(4.4.2ディスプレイデバイスを担当)2006

    • Author(s)
      越田信義(分担執筆)
    • Total Pages
      696
    • Publisher
      朝倉書店
    • Related Report
      2006 Annual Research Report
  • [Remarks]

    • URL

      http://www.tuat.ac.jp/~koslab/

    • Related Report
      2009 Final Research Report
  • [Remarks]

    • URL

      http://www.tuat.ac.jp/~koslab/

    • Related Report
      2009 Annual Research Report
  • [Remarks] T. Ichihara, T. Hatai and N. Koshida, Int. Display Workshop 2008, Best Paper Award (Dec., 2008)

    • Related Report
      2008 Self-evaluation Report
  • [Remarks]

    • URL

      http://www.tuat.ac.jp/~koslab/

    • Related Report
      2008 Annual Research Report
  • [Remarks]

    • URL

      http://www.tuat.ac.jp/~koslab/

    • Related Report
      2007 Annual Research Report
  • [Patent(Industrial Property Rights)] 電子源電極を用いた固体薄膜の形成2010

    • Inventor(s)
      越田信義、太田敢行
    • Industrial Property Rights Holder
      東京農工大学
    • Industrial Property Number
      2010-021463
    • Filing Date
      2010-02-02
    • Related Report
      2009 Final Research Report
  • [Patent(Industrial Property Rights)] 電子源電極を用いた固体薄膜の形成方法2010

    • Inventor(s)
      越田信義・太田敢行
    • Industrial Property Rights Holder
      東京農工大学
    • Industrial Property Number
      2010-021463
    • Filing Date
      2010-02-02
    • Related Report
      2009 Annual Research Report
  • [Patent(Industrial Property Rights)] シリコン系青色発光材料の製造方法及びシリコン系青色発光材料2008

    • Inventor(s)
      越田信義、Bernard Gelloz
    • Industrial Property Rights Holder
      東京農工大学
    • Industrial Property Number
      2008-223583
    • Filing Date
      2008-09-01
    • Related Report
      2009 Final Research Report
  • [Patent(Industrial Property Rights)] シリコン系青色発光材料の製造方法及びシリコン系青色発光材料2008

    • Inventor(s)
      越田信義、B. Gelloz
    • Industrial Property Rights Holder
      東京農工大学
    • Industrial Property Number
      2008-223583
    • Filing Date
      2008-09-01
    • Related Report
      2008 Self-evaluation Report
  • [Patent(Industrial Property Rights)] シリコン系青色発光材料の製造方法及びシリコン系青色発光材料2008

    • Inventor(s)
      越田信義、B.Gelloz
    • Industrial Property Rights Holder
      東京農工大学
    • Industrial Property Number
      2008-223583
    • Filing Date
      2008-09-01
    • Related Report
      2008 Annual Research Report
  • [Patent(Industrial Property Rights)] 電子源電極およびそれを用いた装置2006

    • Inventor(s)
      越田信義、太田敢行
    • Industrial Property Rights Holder
      東京農工大学
    • Industrial Property Number
      2006-281866
    • Filing Date
      2006-10-16
    • Related Report
      2009 Final Research Report
  • [Patent(Industrial Property Rights)] 電子源電極およびそれを用いた装置2006

    • Inventor(s)
      越田信義, 太田敢行
    • Industrial Property Rights Holder
      東京農工大学
    • Industrial Property Number
      2006-281866
    • Filing Date
      2006-10-16
    • Related Report
      2006 Annual Research Report

URL: 

Published: 2006-04-01   Modified: 2018-03-28  

Information User Guide FAQ News Terms of Use Attribution of KAKENHI

Powered by NII kakenhi