Control of physical properties induced in silicon nanostructure and device applications
| Project/Area Number |
18063007
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| Research Category |
Grant-in-Aid for Scientific Research on Priority Areas
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| Allocation Type | Single-year Grants |
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| Review Section |
Science and Engineering
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| Research Institution | Tokyo University of Agriculture and Technology |
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Principal Investigator |
KOSHIDA Nobuyoshi Tokyo University of Agriculture and Technology, 大学院・工学府, 特任教授 (50143631)
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| Co-Investigator(Kenkyū-buntansha) |
SHIRAKASHI Junichi 東京農工大学, 大学院・共生科学技術研究, 准教授 (00315657)
GELLOZ Bernard 東京農工大学, 大学院・共生科学技術研究, 助教 (40343157)
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| Project Period (FY) |
2006 – 2009
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| Project Status |
Completed (Fiscal Year 2009)
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| Budget Amount *help |
¥41,600,000 (Direct Cost: ¥41,600,000)
Fiscal Year 2009: ¥9,900,000 (Direct Cost: ¥9,900,000)
Fiscal Year 2008: ¥9,900,000 (Direct Cost: ¥9,900,000)
Fiscal Year 2007: ¥10,900,000 (Direct Cost: ¥10,900,000)
Fiscal Year 2006: ¥10,900,000 (Direct Cost: ¥10,900,000)
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| Keywords | ナノ構造 / シリコン / 量子サイズ効果 / 発光 / 光集積 / 弾道電子 / 超音波放出 / 表面終端 / 可視発光 / 弾道電子効果 / 電子デバイス / 集積回路 / 熱音響効果 |
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| Research Abstract |
The physical properties induced in quantum-sized silicon have been studied, including their applications. Major results are summarized as follows.
(1) Luminescence: The blue emission was enhanced by high quality oxidation, and then bluephosphorescence was generated. As a related photonic effect, avalanche photoconduction was observed.
(2) Ballistic electron emission: The usefulness has been confirmed in various media: parallel EBlithography and highly sensitive image-pickup in vacuum, VUV light emission in atmospheric pressureXe gas ambience, and hydrogen gas generation and thin solid film deposition in solutions.
(3) Sound emission: It was demonstrated that the emitter is compatible with the use as 3-D objectsensing probe, non-contact actuator, digital speaker, and bio-acoustic communication.
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Report
(6 results)
Research Products
(204 results)
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[Journal Article]2010
Author(s)
T. Nakada, T. Sato, Y. Matsuba, K. Sakemura, Y. Okuda, N. Negishi, A. Watanabe, T. Yoshikawa, K. Ogasawara, M. Nanba, K. Tanioka, N. Egami, A. Kobayashi, N. Koshida
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Journal Title
J. Vac. Sci. Technol. B28
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[Journal Article] 2/3-inch ultra-high-sensitivity image sensor with active-matrix high-efficiency electron emission device2010
Author(s)
T.Nakada, T.Sato, Y.Matsuba, K.Sakemura Y.Okuda, N.Negishi, A.Watanabe, T.Yoshikawa K.Ogasawara, M.Nanba K.Tanioka, N.Egami, A.Kobayashi, N.Koshida
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Peer Reviewed
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[Journal Article] Enhanced output current density of an active-matrix high-efficiency electron emission device (HEED) array with 13. 75μm pixels2009
Author(s)
T. Nakada, T. Sato, Y. Matsuba, R. Tanaka, K. Sakemura, N. Negishi, Y. Okuda, A. Watanabe, T. Yoshikawa, K. Ogasawara, M. Nanba, K. Tanioka, N. Egami, N. Koshida
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Journal Title
J. Vac. Sci. Technol. B27
Pages: 735-739
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[Journal Article] Enhanced output current density of an active-matrix high-efficiency electron emission device(HEED)array with 13.75μm pixels2009
Author(s)
T.Nakada, T.Sato, Y.Matsuba, R.Tanaka, K.Sakemura, N.Negishi, Y.Okuda, A.Watanabe, T.Yoshikawa, K.Ogasawara, M.Nanba, K.Tanioka, N.Egami, N.Koshida
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Journal Title
J.Vac.Sci.Technol.B 27
Pages: 735-739
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Peer Reviewed
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[Journal Article] Development of a super-high sensitive image sensor using 640×480 pixel active-matrix high-efficency electrion emission device2008
Author(s)
N. Negishi, T. Sato, Y. Matsuba, R. Tanaka, T. Nakada, K. Sakemura, Y. Okuda, A. Watanabe, T. Yoshikawa, K. Ogasawara, M. Nanba, S. Okazaki, K. Tanioka, N. Egami, N. Koshida
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Journal Title
J. Vac. Sci. Technol. B26
Pages: 711-715
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[Journal Article] Development of a super-high sensitive image sensor using 640×480 pixel active-matrix high-efficency electrion emission device2008
Author(s)
N. Negishi, T. Sato, Y. Matsuba, R. Tanaka, T. Nakada, K. Sakemura, Y. Okuda, A. Watanabe, T. Yoshikawa, K. Ogasawara, M. Nanba, g. Okazaki, K. Tanioka, N. Egami, and N. Koshida
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Journal Title
J. Vac. Sci. Technol. B 26
Pages: 711-715
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Peer Reviewed
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[Journal Article] Development of a high-resolution active-matrix electron emitter array for application to high-sensitivity image sensing2007
Author(s)
N. Negishi, Y. Matsuba, R. Tanaka, T. Nakada, K. Sakemura, Y. Okuda, A. Watanabe, T. Yoshikawa K. Ogasawara, M. Nanba, S. Okazaki, K. Tanioka, N. Egami, N. Koshida
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Journal Title
J. Vac. Sci. Technol. B25
Pages: 661-666
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[Journal Article] Development of a high-resolution acteve-matrix electron emitter array for application to high-sensitivity image sensing.2007
Author(s)
N. Negishi, Y. Matsuba, R. Tanaka, T. Nakada, K, Sakemura, Y. Okuda, A. Watanabe, T Yoshikawa, K, Ogasawara, M. Nanba, S. Okazaki, K. Tanioka, N. Egami, and N. Koshida
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Journal Title
J. Vac. Sci Technol. B 25
Pages: 661-666
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Peer Reviewed
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[Journal Article] Fabrication of active-matrix high-efficiency electron emission device and its application to high-sensitivity image sensing2006
Author(s)
N.Negishi, R.Tanaka, T.Nakada, K.Sakemura, Y.Okuda, H.Satoh, A.Watanabe, T.Yoshikawa, K.Ogasawara, M.Nanba, S.Okazaki, K.Tanioka, N.Egami, N.Koshida
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Journal Title
J. Vac. Sci. Technol. B 24
Pages: 1021-1025
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[Presentation] High emission current from an active-matrix HEED with 13.75 mm pixels2008
Author(s)
T. Nakada, T. Sato, Y. Matsuba,R. Tanaka, K. Sakemura, N. Negishi, Y. Okuda, A. Watanabe, T. Yoshikawa, K. Ogasawara, M. Nanba, K. Tanioka, N. Egami, and N. Koshida
Organizer
21th Int. Vac. Nanoelectron. Cof.
Place of Presentation
Wroclaw, Poland
Year and Date
2008-07-14
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