Robustness of Three-Dimensional MOSFETs

• Project/Area Number: 18063009
• Research Category: Grant-in-Aid for Scientific Research on Priority Areas
• Allocation Type: Single-year Grants
• Review Section: Science and Engineering
• Research Institution: Tokyo Institute of Technology
• Principal Investigator: IWAI Hiroshi Tokyo Institute of Technology, フロンティア研究センター, 教授 (40313358)
• Co-Investigator(Kenkyū-buntansha): HATTORI Takeo 東京工業大学, フロンティア研究センター, 客員教授 (10061516) ; TSUTSUI Kazuo 東京工業大学, 大学院・総合理工学研究科, 教授 (60188589) ; KAKUSHIMA Kuniyuki 東京工業大学, 大学院・総合理工学研究科, 助教 (50401568) ; PARHAT Ahmet 東京工業大学, フロンティア研究センター, 特任准教授 (00418675)
• Project Period (FY): 2006 – 2009
• Project Status: Completed (Fiscal Year 2009)
• Budget Amount: ¥43,600,000 (Direct Cost: ¥43,600,000); Fiscal Year 2009: ¥10,400,000 (Direct Cost: ¥10,400,000); Fiscal Year 2008: ¥10,400,000 (Direct Cost: ¥10,400,000); Fiscal Year 2007: ¥11,400,000 (Direct Cost: ¥11,400,000); Fiscal Year 2006: ¥11,400,000 (Direct Cost: ¥11,400,000)
• Keywords: ばらつき / ゆらぎ / CMOS / ダブルゲート / FinFET / シリサイド / 感度解析 / トランジスタ / 3次元構造 / ロバストネス / 特性ばらつき / ショットキー / オン電流 / MOSFET / 3次元 / ショットキー接合 / 数値解析 / 三次元構造MOSFET / しきい値 / Schottky source / drain / エネルギー障壁 / 短チャネル効果 / Niシリサイド

Research Abstract

For the future large scale integrated circuit, new transistor with three-dimensional structures will be used in near future. However, variability of transistor characteristics, which is very significant problem on scaling down of device sizes, on the new type transistor has not been known well. In this work, comprehensive study of variability resulted from fluctuations of various device parameters was carried out, and proposed guiding principles for realizing robust transistors for the variability. In addition, a new process technology of silicide electrodes which will be useful to the robust transistors was developed.

Research Products

• [Journal Article] Analysis of Threshold Voltage Variation in Fin Field Effect Transistors: Separation of Short Channel Effects (2010)
  • Author(s): Y. Koyabashi, K. Tsutsui, K. Kakushima, P. Ahmet, V.R. Rao, H. Iwai
  • Journal Title: Jpn. J. Appl. Phys Vol.49 Pages: 44201-44201
  • NAID: 40017085077
  • Peer Reviewed
• [Journal Article] Analysis of Dependence of Short-channel Effects in Double-gate MOSFETs on Channel Thickness (2010)
  • Author(s): Y. Kobayasih, K. Kakushima, P. Ahmet, V.R. Rao, K. Tsutsui, H. Iwai
  • Journal Title: Microelectronics Reliability Vol.50 Pages: 332-337
  • Peer Reviewed
• [Journal Article] Analysis of Dependence of Short-channel Effects in Double-gate MOSFETs on Channel Thickness (2010)
  • Author(s): Y.Kobayashi, K.Kakushima, P.Ahmet, V.R.Rao, K.Tsutui, H.Iwai
  • Journal Title: Microelectronics Reliability 50 Pages: 332-337
  • Peer Reviewed
• [Journal Article] Analysis of Threshold Voltage Variation in Fin Field Effect Transistors : Separation of Short Channel Effects (2010)
  • Author(s): Y.Kobayashi, K.Tsutsui, K.Kakushima, P.Ahmet, V.P.Rao, H.Iwai
  • Journal Title: Japanese Journal of Applied Physics 49(掲載決定)
  • NAID: 40017085077
  • Peer Reviewed
• [Journal Article] Schottky Barrier Height Modulation by Er Insertion and Its Application to SB-MOSFETs (2009)
  • Author(s): K. Noguchi, W. Hosoda, K. Matano, K. Kakushima, P. Ahmet, K. Tsutsui, N. Sugii, A. Ch, orkar, T. Hattori, H. Iwai
  • Journal Title: ECS Trans Vol.16 Pages: 29-34
• [Journal Article] Schottky Barrier Height Modulation by Er Insertion and Its Application to SB-MOSFETs (2009)
  • Author(s): K.Noguchi, W.Hosoda, K.Matano, K.Kakushima, P.Ahmet, K.Tsutsui, N.Sugii, A.N.Chandorkar, T.Hattori, H.Iwai
  • Journal Title: ECS Transactions 16 Pages: 29-34
• [Journal Article] Thermal Stability of Ni silicide Films on Heavily Doped n+ and p+ Si Substrates (2008)
  • Author(s): P. Ahmet, T. Shiozawa, K. Nagahiro, T. Nagata, K. Kakushima, K. Tsutsui, T. Chikyo, H. Iwai
  • Journal Title: Microelectronic Engineering Vol.85 Pages: 1642-1645
  • Peer Reviewed
• [Journal Article] Analysis of irregular increase in sheet resistance of Ni silicides on transition from NiSi to NiSi_2 (2008)
  • Author(s): Kazuo Tsutsui, Ruifei Xiang, Koji Nagahiro, Takashi Shiozawa, Parhat Ahmet, Yasutoshi Okuno, Michikazu Matsumoto, Masafumi Kubota, Kuniyuki Kakushima, Hiroshi Iwai
  • Journal Title: Microelectronic Engineering 85 Pages: 315-319
  • Peer Reviewed
• [Journal Article] Thermal Stability of Ni-silicide Films on Heavily Doped n^+ and P^+ Si Substrates (2008)
  • Author(s): Parhat Ahmet, Takashi Shiozawa, Koji Nagahiro, Takahiro Nagata, Kuniyuki Kakushima, Kazuo Tsutsui, Toyohiro Chikyow and Hiroshi Iwai
  • Journal Title: Microelectronic Engineering in press
  • Peer Reviewed
• [Journal Article] Parasitic Effects in Multi-gate MOSFETs (2007)
  • Author(s): Y. Kobayashi, V.R. Manoj, K. Tsutsui, V. Hariharan, K. Kakushima, V.R. Rao, P. Ahmet, H. Iwai
  • Journal Title: IEICE Trans. on Electronics Vol.E90-C Pages: 2051-2056
  • NAID: 110007541196
  • Peer Reviewed
• [Journal Article] Parasitic Effects Depending on Shape of Spacer Region on FinFETs (2007)
  • Author(s): Y. Kobayashi, K. Tsutsui, K. Kakushima, V. Hariharan, V. R. Rao, P. Ahmet, and H. Iwai
  • Journal Title: ECS Transaction Vol. 6, No. 4 Pages: 83-88
  • Peer Reviewed
• [Journal Article] Parasitic effects in multi-gate MOSFETs (2007)
  • Author(s): Yusuke Kobayashi, C. Raghunathan Manoj, Kazuo Tsutsui, Venkanarayan Hariharan, Kuniyuki Kakushima, V. Ramgopal Rao, Parhat Ahmet, and Hiroshi Iwai
  • Journal Title: IEICE Transactions vol. E90-C, No.10 Pages: 2051-2056
  • NAID: 110007541196
  • Peer Reviewed
• [Journal Article] Parasitic effects in multi-gate MOSFETs (2007)
  • Author(s): Yusuke Kobayashi, C. Raghunathan Manoj, Kazuo Tsutsui, Venkanarayan Hariharan, Kuniyuki Kakushima, V. Ramgopal Rao, Parhat Ahmet, and Hiroshi Iwai
  • Journal Title: IEICE Transactions E90-C Pages: 2051-2056
  • NAID: 110007541196
  • Peer Reviewed
• [Journal Article] Improvement of Thermal Stability of Ni Silcide by Additive Metals with Specific Introduction Processes (2007)
  • Author(s): K. Tsutsui, K. Nagahiro, T. Shiozawa, P. Ahmet, K. Kakushima and H. Iwai
  • Journal Title: ECS Transaction 11 Pages: 207-213
• [Journal Article] Parasitic Effects Depending on Shape of Spacer Region on FinFETs (2007)
  • Author(s): Y. Kobayashi, K. Tsutsui, K. Kakushima, V. Hariharan, V. R. Rao, P. Ahmet, H. Iwai
  • Journal Title: ECS Transaction 6 Pages: 83-88
• [Journal Article] Parasitic Effects in Multi-gate MOSFETs (2007)
  • Author(s): Y.Kobayashi, C.R.Manoj, K.Tsutsui, V.Hariharan, K.Kakushima, V.R.Rao, P.Ahmet, H.Iwai
  • Journal Title: IEICE Transactions on Electronics (出版予定)(掲載決定)
  • NAID: 110007541196
• [Journal Article] Parasitic Effects Depending on Shape of Spacer Region on FinFETs (2007)
  • Author(s): Y.Kobahashi, K.Tsutsui, K.Kakushima, V.Hariharan, V.R.Rao, P.Ahmet, H.Iwai
  • Journal Title: SOI Device Technology 13 (ECS Transaction-Chicago) 3(出版予定)(掲載決定)
• [Presentation] Er Inserted Ni Silicide Metal Source/Drain for Schottky MOSFETs (2010)
  • Author(s): P. Ahmet, W. Hosoda, K. Noguchi, Y. Ohishi, K. Kakushima, K. Tsutsui, H. Iwai
  • Organizer: 10th Int. Workshop on Junction Technology (IWJT2010)
  • Place of Presentation: Shanghai, China
  • Year and Date: 2010-05-11
• [Presentation] Fabrication of SB-MOSFETs on SOI Substrate Using Ni Silicide Containing Er Interlayer (2010)
  • Author(s): W.Hosoda, K.Ozawa, K.Kakushima, P.Ahmet, K.Tsutsui, A.Nishiyama, N.Sugii, K.Natori, T.Hattori, H.Iwai
  • Organizer: China Semiconductor Technology International Conference(CSTIC)
  • Place of Presentation: 上海、中国
  • Year and Date: 2010-03-19
• [Presentation] 酸化膜中のSiナノワイヤにおけるNi拡散の制御 (2010)
  • Author(s): 茂森直登, 新井英明, 佐藤創志, 角嶋クニユキ, アヘメトパールハット, 西山彰, 筒井一生, 杉井信之, 名取研二, 服部健雄, 岩井洋
  • Organizer: 第57回応用物理学関係連合講演会
  • Place of Presentation: 平塚市
  • Year and Date: 2010-03-18
• [Presentation] Short-channel effects on FinFETs induced by inappropriate fin widths (2009)
  • Author(s): Y.Kobayashi, K.Kakushima, P.Ahmet, V.Ramgopal Rao, K.Tsutsui, H.Iwai
  • Organizer: G-COE PICE International Symposium on Silicon Nano Devices
  • Place of Presentation: Tokyo Institute of Technology, Japan
  • Year and Date: 2009-10-13
• [Presentation] A Study of Schottky Barrier Height Modulation of NiSi by Interlayer In sertion and Its Application to SOI SB-MOSFETs (2009)
  • Author(s): W.Hosoda, K.Ozawa, K.Kakushima, P.Ahmet, K.Tsutsui, A.Nishiyama, N.Sugii, K.Natori, T.Hattori, H.Iwai
  • Organizer: G-COE PICE International Symposium on Silicon Nano Devices
  • Place of Presentation: Tokyo Institute of Technology, Japan
  • Year and Date: 2009-10-13
• [Presentation] Annealing Reaction for Ni Silicidation of Si Nanowire (2009)
  • Author(s): H.Arai, H.Kamimura, S.Sato, K.Kakushima, P.Ahmet, K.Tsutsui, N.Sugii, K.Natori, T.Hattori, H.Iwai
  • Organizer: 216^<th> Electrochemical Society Meeting
  • Place of Presentation: Vienna, Austria
  • Year and Date: 2009-10-09
• [Presentation] 2stepアニールを用いた酸化膜中のSiナノワイヤへのNiシリサイド化 (2009)
  • Author(s): 茂森直登, 新井英朗, 佐藤創志, 角嶋邦之, アヘメトパールハット, 西山彰, 筒井一生, 杉井信之, 服部健雄, 岩井洋
  • Organizer: 第70回応用物理学学術講演会
  • Place of Presentation: 富山市
  • Year and Date: 2009-09-11
• [Presentation] 異種金属界面挿入によるNiシリサイドのショットキー障壁変調とSB-MOSFETへの応用II (2009)
  • Author(s): 小澤健児, 細田亘, 角嶋邦之, アヘメトパールハット, 筒井一生, 西山彰, 杉井信之, 服部健雄, 名取研二, 岩井洋
  • Organizer: 第70回応用物理学学術講演会
  • Place of Presentation: 富山市
  • Year and Date: 2009-09-10
• [Presentation] FinFETの構造ばらつきによるオン電流のばらつきの検討 (2009)
  • Author(s): 小林勇介、角嶋邦之、パールハット・アヘメト、ラオ・ラムゴパル、筒井一生、岩井洋
  • Organizer: 2009春季第56回応用物理学会学術講演会
  • Place of Presentation: 筑波大学
  • Year and Date: 2009-03-30
• [Presentation] 異種金属界面挿入によるNiシリサイドのショットキー障壁変調とSB一MOSFETへの応用 (2009)
  • Author(s): 細田亘, 野口浩平, 角嶋邦之, パールハット・アヘメト, 筒井一生, 杉井信之, 服部健雄, 岩井洋
  • Organizer: 2009春季第56回応用物理学会学術講演会
  • Place of Presentation: 筑波大学
  • Year and Date: 2009-03-30
• [Presentation] Schottky Barrier Height Modulation by Er Insertion and Its Application to SB-MOSFETs (2008)
  • Author(s): K. Noguchi, W. Hosoda, K. Matano, K. Kakushima, P. Ahmet, K. Tsutsui, N. Sugii, A.N. Chandorkar, T. Hattori, H. Iwai
  • Organizer: 214th Electrochem. Society (ECS) Meeting (PRiME 2008)
  • Place of Presentation: Honolulu, USA
  • Year and Date: 2008-10-14
• [Presentation] Analysis of Threshold Voltage Variations of FinFETs Relating to Short Channel Effects (2008)
  • Author(s): Y. Kobayashi, A.B. Sachid, K. Tsutsui, K. Kakushima, P. Ahmet, V.R. Rao, H. Iwai
  • Organizer: 214th Electrochem. Society (ECS) Meeting (PRiME 2008)
  • Place of Presentation: Honolulu, USA
  • Year and Date: 2008-10-14
• [Presentation] Analysis of threshold voltage variations of FinFETs : Separation of short channel effects and space charge effects (2008)
  • Author(s): Yusuke Kobayashi, Kazuo Tsutsui, K uniyuki Kakushima, Parhat Ahmet, V. Ramgopal Rao and Hiroshi Iwai
  • Organizer: Analysis of threshold voltage variations of FinFETs : Separation of short channel effects and space charge effects
  • Place of Presentation: Tsukuba, Japan
  • Year and Date: 2008-09-26
• [Presentation] Analysis of Threshold Voltage Variations of FinFETs: Separation of Short Channel Effects and Space Charge Effects (2008)
  • Author(s): Y. Kobayashi, K. Tsutsui, K. Kakushima, V.R. Rao, P. Ahmet, H. Iwai
  • Organizer: Int. Conf. on Solid State Devices and Materials (SSDM 2008)
  • Place of Presentation: Ibaraki, Japan
  • Year and Date: 2008-09-25
• [Presentation] Schottky Barrier Height Modulation by Er Insertion and Its Application to SB-MOSFETs (2008)
  • Author(s): K. Noguchi, W. Hosoda, K. Matano, K. Kakushima, P. Ahmet, K. Tsutsui, N. Sugii, A. N. Chandorkar, T. Hattori and H. Iwai
  • Organizer: 214th ECS Meeting
  • Place of Presentation: Honolulu, USA
• [Presentation] Analysis of Threshold Voltage Variations of FinFETs Relating to Short Channel Effects (2008)
  • Author(s): Y. Kobayashi, Angada B. Sachidc, K. Tsutsui, K. Kakushima, P. Ahmet, V. Ramgopal Rao and H. Iwai
  • Organizer: 214th ECS Meeting
  • Place of Presentation: Honolulu, USA
• [Presentation] Analysis of threshold voltage variations of FinFETs : Separation of short channel effects and space charge effects (2008)
  • Author(s): Yusuke Kobayashi, Kazuo Tsutsui, Kuniyuki Kakushima, Parhat Ahmet, V. Ramgopal Rao and Hiroshi Iwai
  • Organizer: Int. Conf. on Solid State Devices and Materials
  • Place of Presentation: Tsukuba, Japan
• [Presentation] Schottky Barrier Height Modulation by Er Insertion and Its Application to SB-M OSFETs (2008)
  • Author(s): K. Noguchi, W. Hosoda, K. Matano, K. Kakushima, P. Ahmet, K. Tsutsu i, N. Sugii, A. N. Chandorkar, T. Hattori, and H. Iwai
  • Organizer: Schottky Barrier Height Modulation by Er Insertion and Its Application to SB-M OSFETs
  • Place of Presentation: Honolulu, USA
• [Presentation] FinFETの閾値変動における短チャネル効果による影響の切り分け (2008)
  • Author(s): 小林勇介、角嶋邦之、パールハット・アヘメト、ラオ・ラムゴパル、筒井一生、岩井洋
  • Organizer: 2008秋季第69回応用物理学会学術講演会
  • Place of Presentation: 中部大学
• [Presentation] Er層界面挿入によるNiシリサイドのショットキー障壁変調とSB-MOSFETへの応用 (2008)
  • Author(s): 細田亘, 野口浩平, 角嶋邦之, パールハット・アヘメト, 筒井一生, 杉井信之, 服部健雄, 岩井洋
  • Organizer: 第69回応用物理学会学術講演会
  • Place of Presentation: 中部大学
• [Presentation] Hf層界面挿入によるNiシリサイドのショットキー障壁変調技術 (2008)
  • Author(s): 又野克哉, 野口浩平, 角嶋邦之, パールハット・アヘメト, 筒井一生, 杉井信之, 服部健雄, 岩井洋
  • Organizer: 2008秋季第69回応用物理学会学術講演会
  • Place of Presentation: 中部大学
• [Presentation] Improvement of Thermal Stability of Ni Silicide on N^+-Si by Direct Deposition of Group III Element (A1,B) Thin Film at Ni/Si Interface (2008)
  • Author(s): K. Tsutsui, T. Shiozawa, K. Nagahiro, Y. Ohishi, K. Kakushima, P. Ahmet, N. Urushihara, M. Suzuki, and H. Iwai
  • Organizer: Materials for Advanced Metalization (MAM2008)
  • Place of Presentation: Dresden, Germany
• [Presentation] Schottky Barrier Height Modulation of Ni Silicide/Si Contacts by Insertion of Thin Er or Pt Layers (2008)
  • Author(s): Yoshisa Ohishi, Kohei Noguchi, Kuniyuki Kakushima, Parhat Ahmet, Kazuo Tsutsui, Nobuyuki Sugii, Takeo Hattori, and Hiroshi Iwai
  • Organizer: 7th Int. Semiconductor Technology Conference (ECS-ISTC2008)
  • Place of Presentation: Shanghai, China
• [Presentation] 高濃度n^+-Si及びp^+-Si基板上のNiシリサイドの熱安定性の違い (2008)
  • Author(s): アヘメトパールハット, 角嶋邦之, 長田貴弘, 筒井一生, 杉井信之, 知京豊裕, 服部健雄, 岩井 洋
  • Organizer: 第55回応用物理学関係連合講演会
  • Place of Presentation: 日本大学船橋キャンパス
• [Presentation] Er層界面挿入によるNiシリサイドのショットキー障壁変調技術 (2008)
  • Author(s): 野口浩平, 大石善久, 角嶋邦之, パールハットアヘメト, 筒井一生, 杉井信之, 服部健雄, 岩井 洋
  • Organizer: 第55回応用物理学関係連合講演会
  • Place of Presentation: 日本大学船橋キャンパス
• [Presentation] FinFETにおけるショートチャネル効果のフィン幅依存性 (2008)
  • Author(s): 小林勇介, 角嶋邦之, パールハットアヘメト, ラムゴパルラオ, 筒井一生, 岩井 洋
  • Organizer: 第55回応用物理学関係連合講演会
  • Place of Presentation: 日本大学船橋キャンパス
• [Presentation] Parasitic Effects Depending on Shape of Spacer Region on FinFETs (2007)
  • Author(s): Y. Kobayashi, K. Tsutsui, K. Kakushima, V. Hariharan, V. R. Rao, P. Ahmet, H. Iwai
  • Organizer: 211th ECS Meeting
  • Place of Presentation: Chicago, USA
• [Presentation] Improvement of Thermal Stability of Ni Silcide by Additive Metals with Specific Introduction Processes (2007)
  • Author(s): K. Tsutsui, K. Nagahiro, T. Shiozawa, P. Ahment, K. Kakushima and H. Iwai
  • Organizer: 212th ECS Meeting
  • Place of Presentation: Washington D.C., USA
• [Presentation] ダブルゲート型およびプレーナー型MOSFETにおける構造バラつきの影響の比較検討 (2007)
  • Author(s): 小林勇介, 角嶋邦之, Ahmet P., Rao V.R., 筒井一生, 岩井 洋
  • Organizer: 第68回応用物理学会学術講演会
  • Place of Presentation: 北海道工業大学
• [Presentation] 極薄Er層を界面に挿入したNiSi/p-Siショットキー障壁の熱処理温度依存性 (2007)
  • Author(s): 野口浩平, 大石善久, 角嶋邦之, パールハットアヘメト, 筒井一生, 杉井信之, 服部健雄, 岩井 洋
  • Organizer: 第68回応用物理学会学術講演会
  • Place of Presentation: 北海道工業大学