| Project/Area Number |
18063010
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| Research Category |
Grant-in-Aid for Scientific Research on Priority Areas
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| Allocation Type | Single-year Grants |
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| Review Section |
Science and Engineering
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| Research Institution | Shizuoka University |
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Principal Investigator |
TABE Michiharu Shizuoka University, 電子工学研究所, 教授 (80262799)
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| Co-Investigator(Kenkyū-buntansha) |
池田 浩也 静岡大学, 電子工学研究所, 准教授 (00262882)
猪川 洋 静岡大学, 電子工学研究所, 教授 (50393757)
ラトノ ヌルヤディ 静岡大学, 創造科学技術大学院, 助教 (70402245)
小野 行徳 NTT, 物性科学基礎研究所, 主任研究員 (80374073)
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| Project Period (FY) |
2006 – 2009
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| Project Status |
Completed (Fiscal Year 2009)
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| Budget Amount *help |
¥47,600,000 (Direct Cost: ¥47,600,000)
Fiscal Year 2009: ¥11,900,000 (Direct Cost: ¥11,900,000)
Fiscal Year 2008: ¥11,900,000 (Direct Cost: ¥11,900,000)
Fiscal Year 2007: ¥11,900,000 (Direct Cost: ¥11,900,000)
Fiscal Year 2006: ¥11,900,000 (Direct Cost: ¥11,900,000)
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| Keywords | 電子デバイス・機器 / 電子・電気材料 / トンネル現象 / シリコンナノデバイス |
|---|
| Research Abstract |
We have fabricated and studied multi-tunnel junctions SOI-MOSFETs by using donor potentials as quantum dots. As a result, 1) photons are detected as current level switching in random telegraph signal, 2) single-electron transfer in random potential landscape is realized, and 3) single dopant potentials in channel are detected by low-temperature Kelvin Probe Force Microscope.
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