Construction of High-k Gate/Strain-engineered Germanium channel Structures with Functional Nano-system
Project/Area Number |
18063012
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Research Category |
Grant-in-Aid for Scientific Research on Priority Areas
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Allocation Type | Single-year Grants |
Review Section |
Science and Engineering
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Research Institution | Nagoya University |
Principal Investigator |
ZAIMA Shigeaki Nagoya University, 大学院・工学研究科, 教授 (70158947)
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Co-Investigator(Kenkyū-buntansha) |
OGAWA Masaki 名古屋大学, エコトピア科学研究所, 教授 (10377773)
SAKAI Akira 大阪大学, 大学院・基礎工学研究科, 教授 (20314031)
WATANABE Heiji 大阪大学, 大学院・工学研究科, 教授 (90379115)
SAKASHITA Mitsuo 名古屋大学, 大学院・工学研究科, 助教 (30225792)
KONDO Hiroki 名古屋大学, 大学院・工学研究科, 准教授 (50345930)
NAKATSUKA Osamu 名古屋大学, 大学院・工学研究科, 講師 (20334998)
|
Project Period (FY) |
2006 – 2009
|
Project Status |
Completed (Fiscal Year 2009)
|
Budget Amount *help |
¥194,900,000 (Direct Cost: ¥194,900,000)
Fiscal Year 2009: ¥24,200,000 (Direct Cost: ¥24,200,000)
Fiscal Year 2008: ¥57,600,000 (Direct Cost: ¥57,600,000)
Fiscal Year 2007: ¥56,500,000 (Direct Cost: ¥56,500,000)
Fiscal Year 2006: ¥56,600,000 (Direct Cost: ¥56,600,000)
|
Keywords | 半導体超微細化 / デバイス設計・製造プロセス / ナノ材料 / 半導体物性 / 表面・界面物性 / ポストスケーリング / ゲートスタック構造 / 歪ゲルマニウム |
Research Abstract |
We have investigated "high mobility tensile-strained Ge channel", "high dielectric and low leakage gate insulators/Ge stack", "Ge nitridation", and "metal alloy gate electrodes with work function controllability and high uniformity" for realization of novel group-IV semiconductors MOSFETs in the post-scaling generation. We have achieved finding new materials, establishing elemental technology, and developing integration technology of each material.
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Report
(6 results)
Research Products
(87 results)
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[Journal Article] Structural change of direct silicon bonding substrates by interfacial oxide out-diffusion annealing2010
Author(s)
T. Kato, Y. Nakamura, J. Kikkawa, A. Sakai, E. Toyoda, K. Izunome, O. Nakatsuka, S. Zaima, Y. Imai, S. Kimura, O. Sakata
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Journal Title
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[Journal Article] Microstructures in directly bonded Sisubstrates2009
Author(s)
Y. Ohara, T. Ueda, A. Sakai, O. Nakatsuka, M. Ogawa, S. Zaima, E. Toyoda, H. Isogai, T. Senda, K. Izunome, H. Tajiri, O. Sakata, S. Kimura, T. Sakata, H. Mori
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Journal Title
Solid-State Electronics 53
Pages: 837-840
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[Presentation] Structural change of direct silicon bonding substrates by interfacial oxide out-diffusion annealing2009
Author(s)
T. Kato, T. Ueda, Y. Ohara, J. Kikkawa, Y. Nakamura, A. Sakai, O. Nakatsuka, S. Zaima, E. Toyoda, K. Izunome, Y. Imai, S. Kimura, O. Sakata
Organizer
The 6th International Conference on Silicon Epitaxy and Heterostructures
Place of Presentation
Los Angeles, USA
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[Presentation] Application of synchrotron x-ray diffraction methods to gate stacks of advanced MOS devices2008
Author(s)
Invited: T. Shimura, T. Inoue, Y. Okamoto, T. Hosoi, A. Ogura, O. Sakata, S. Kimura, H. Edo, S. Iida, H. Watanabe
Organizer
213^<th> ECS Meeting
Place of Presentation
Phoenix, AZ, USA
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