| Project/Area Number |
18063018
|
|---|
| Research Category |
Grant-in-Aid for Scientific Research on Priority Areas
|
| Allocation Type | Single-year Grants |
|---|
| Review Section |
Science and Engineering
|
|---|
| Research Institution | Kyushu University |
|---|
Principal Investigator |
MIYAO Masanobu Kyushu University, 大学院・システム情報科学研究院, 教授 (60315132)
|
|---|
| Co-Investigator(Kenkyū-buntansha) |
SADOH Taizoh 九州大学, 大学院・システム情報科学研究院, 准教授 (20274491)
HAMAYA Kohei 九州大学, 大学院・システム情報科学研究院, 准教授 (90401281)
権丈 淳 九州大学, 大学院・システム情報科学研究院, 助手 (20037899)
|
|---|
| Project Period (FY) |
2006 – 2009
|
| Project Status |
Completed (Fiscal Year 2009)
|
| Budget Amount *help |
¥53,600,000 (Direct Cost: ¥53,600,000)
Fiscal Year 2009: ¥14,900,000 (Direct Cost: ¥14,900,000)
Fiscal Year 2008: ¥14,900,000 (Direct Cost: ¥14,900,000)
Fiscal Year 2007: ¥11,900,000 (Direct Cost: ¥11,900,000)
Fiscal Year 2006: ¥11,900,000 (Direct Cost: ¥11,900,000)
|
|---|
| Keywords | 電子デバイス・機器 / 集積回路 / スピントロニクス / シリコンゲルマニウム |
|---|
| Research Abstract |
The spin-based electronic (spintronic) technologies are promising to break through the scaling limits of the CMOS. In particular, group-IV semiconductor spintronics, compatible with the conventional Si-LSI, is desired. In line with this, we have investigated high-quality formation of the ferromagnetic silicide (Fe_3Si) on SiGe to realize source-drain (S/D) engineering of spin-transistors. Consequently, we have developed a technique for the atomically-controlled epitaxial growth of Fe_3Si on SiGe and demonstrated the electrical spin injection and detection in Si.
|
