Growth of Ferromagnetic Silicide for Source/Drain Engineering
| Project/Area Number |
18063018
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| Research Category |
Grant-in-Aid for Scientific Research on Priority Areas
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| Allocation Type | Single-year Grants |
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| Review Section |
Science and Engineering
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| Research Institution | Kyushu University |
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Principal Investigator |
MIYAO Masanobu Kyushu University, 大学院・システム情報科学研究院, 教授 (60315132)
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| Co-Investigator(Kenkyū-buntansha) |
SADOH Taizoh 九州大学, 大学院・システム情報科学研究院, 准教授 (20274491)
HAMAYA Kohei 九州大学, 大学院・システム情報科学研究院, 准教授 (90401281)
権丈 淳 九州大学, 大学院・システム情報科学研究院, 助手 (20037899)
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| Project Period (FY) |
2006 – 2009
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| Project Status |
Completed (Fiscal Year 2009)
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| Budget Amount *help |
¥53,600,000 (Direct Cost: ¥53,600,000)
Fiscal Year 2009: ¥14,900,000 (Direct Cost: ¥14,900,000)
Fiscal Year 2008: ¥14,900,000 (Direct Cost: ¥14,900,000)
Fiscal Year 2007: ¥11,900,000 (Direct Cost: ¥11,900,000)
Fiscal Year 2006: ¥11,900,000 (Direct Cost: ¥11,900,000)
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| Keywords | 電子デバイス・機器 / 集積回路 / スピントロニクス / シリコンゲルマニウム |
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| Research Abstract |
The spin-based electronic (spintronic) technologies are promising to break through the scaling limits of the CMOS. In particular, group-IV semiconductor spintronics, compatible with the conventional Si-LSI, is desired. In line with this, we have investigated high-quality formation of the ferromagnetic silicide (Fe_3Si) on SiGe to realize source-drain (S/D) engineering of spin-transistors. Consequently, we have developed a technique for the atomically-controlled epitaxial growth of Fe_3Si on SiGe and demonstrated the electrical spin injection and detection in Si.
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Report
(6 results)
Research Products
(65 results)
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[Presentation] Atomically Controlled Epitaxial Growth of Ferromagnetic Heusler Alloys for Group-IV- Semiconductor Spintronic Applications (invited)2008
Author(s)
M. Miyao, K. Hamaya, T. Sadoh, K. Ueda, Y. Ando, Y. Nozaki, K. Matsuyama, H. Itoh, and Y. Maeda
Organizer
IUMRS-ICA, ZI-4
Place of Presentation
Nagoya, Japan
Related Report
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