| Budget Amount *help |
¥101,270,000 (Direct Cost: ¥77,900,000、Indirect Cost: ¥23,370,000)
Fiscal Year 2010: ¥16,120,000 (Direct Cost: ¥12,400,000、Indirect Cost: ¥3,720,000)
Fiscal Year 2009: ¥20,150,000 (Direct Cost: ¥15,500,000、Indirect Cost: ¥4,650,000)
Fiscal Year 2008: ¥21,060,000 (Direct Cost: ¥16,200,000、Indirect Cost: ¥4,860,000)
Fiscal Year 2007: ¥20,800,000 (Direct Cost: ¥16,000,000、Indirect Cost: ¥4,800,000)
Fiscal Year 2006: ¥23,140,000 (Direct Cost: ¥17,800,000、Indirect Cost: ¥5,340,000)
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| Research Abstract |
We aimed at the development of basic technologies for reconfigurable nano-scale spin devices that cannot be realized by the conventional semiconductor device technology. We proposed new semiconductor-based device structures with spin-degrees of freedom, and fabricate the reconfigurable devices (in which the device functions can be reprogrammed after fabricating the devices), and demonstrated the device operation principles. We studied the following three types of spin devices.
(1) Group-IV-semiconductor based MOSFET planer-type spin devices
(2) III-V-semiconductor based heterojunction spin devices
(3) Single-electron type spin transistors based on hybrid materials consisting of ferromagnetic nano-particles and semiconductors.
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