• Search Research Projects
  • Search Researchers
  • How to Use
  1. Back to previous page

Development of pixel sensors based on SOI technology.

Research Project

Project/Area Number 18204027
Research Category

Grant-in-Aid for Scientific Research (A)

Allocation TypeSingle-year Grants
Section一般
Research Field Particle/Nuclear/Cosmic ray/Astro physics
Research InstitutionHigh Energy Accelerator Research Organization

Principal Investigator

TORU Tsuboyama  High Energy Accelerator Research Organization, Institute for Particle and Nuclear Study, Lecturer (80188622)

Co-Investigator(Kenkyū-buntansha) ARAI Yasuo  High Energy Accelerator Research Organization (KEK), Institute for Particle and Nuclear Study, Assistant Professor (90167990)
UNNO Yoshinobu  High Energy Accelerator Research Organization (KEK), Institute for Particle and Nuclear Study, Assistant Professor (40151956)
HAZUMI Masashi  High Energy Accelerator Research Organization (KEK), Institute for Particle and Nuclear Study, Professor (20263197)
IKEDA Hirokazu  Japan Aerospace Exploration Agency, Institute of Space and Astronautical Science, Professor (10132680)
IAHINO Hirokazu  Tokyo Institute of Technology, Physics Department, Research Associate (90323782)
Project Period (FY) 2006 – 2007
Project Status Completed (Fiscal Year 2007)
Budget Amount *help
¥35,620,000 (Direct Cost: ¥27,400,000、Indirect Cost: ¥8,220,000)
Fiscal Year 2007: ¥14,040,000 (Direct Cost: ¥10,800,000、Indirect Cost: ¥3,240,000)
Fiscal Year 2006: ¥21,580,000 (Direct Cost: ¥16,600,000、Indirect Cost: ¥4,980,000)
KeywordsParticle detection / SOI device / Sensor technology / Imaging / Pixel Devices / SOIデバイス / SoIデバイス
Research Abstract

SOI is a semiconductor technology, where the low-resistivity silicon is developed on a Si02 insulator layer above usual silicon wafers. The technology enables Thster CMOS circuit than normal bulk CMOS process. If high-resistivity silicon is used for the wafer and the signal charge induced in the wafer can be processed by the CMOS circuit above the Si02 layer a monolithic radiation sensor can be produced. Because of the deep sub-micron technology, afine pixel sensor such as 20 prax 20 pm, that is suitable for particle traeking and X ray imaging, can be produced.
In this study, we collaborated with OM Electric, a major SOI foundry in Japan., we developed a monolithic pixel sensor. In parallel, basic studies such as a TCAD simulation, radiation hardness, high performance analogue circuit were done.
2006 Activities: Several test chips and 128x128 pixel sensor was processed with SOI technology. We confirmed the functionality of the device and sensitivity to pulsed laser light and minimum-ionizing particles. The capability of imaging is also demonstrated. In parallel, basic study of implantation energy was done in TCAD (device and semiconductor simulation tool) and improvement of break-down voltage is really achieved. The radiation tolerance was measured. We confirmed the SOI CMOS circuit can be operated above 30 M rad γ ray irradiation and 10^<15>/cm^2neuiron flux.
2007 Activities: Encouraged by the result of 2007 developments, a prototype pixel sensor dedicated for for the upgrade detector for the Super KEKB project is designed and processed. The preliminary measurement shows the static properties of sensor part (I-V characteristics) is satisfactory. The test of dynamic properties is still in progress and the result will be published soon.

Report

(3 results)
  • 2007 Annual Research Report   Final Research Report Summary
  • 2006 Annual Research Report
  • Research Products

    (23 results)

All 2008 2007 Other

All Journal Article (15 results) (of which Peer Reviewed: 10 results) Presentation (6 results) Remarks (2 results)

  • [Journal Article] R&D of a pixel sensor based on 0.15 μm fully depleted SOI technology2007

    • Author(s)
      坪山 透, 他
    • Journal Title

      Nucl. Instr. and Meth A 582

      Pages: 861-865

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2007 Final Research Report Summary
    • Peer Reviewed
  • [Journal Article] Total Dose Effects on 0.15μm FD-SOI CMOS Transistors2007

    • Author(s)
      池田 博一
    • Journal Title

      2007 IEEE Nuclear Science Symposium Conference Record N44-6,

      Pages: 2173-2177

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2007 Final Research Report Summary
    • Peer Reviewed
  • [Journal Article] SOI pixel developments in a 0.15μm technology2007

    • Author(s)
      新井 康夫, 他
    • Journal Title

      IEEE Nuclear Science Symposium Conference Record, N44-2

      Pages: 1040-1046

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2007 Final Research Report Summary
    • Peer Reviewed
  • [Journal Article] Deep sub-micron FD-SOI for front-end application2007

    • Author(s)
      池田 博一, 他
    • Journal Title

      Nucl. Instr. and Meth A 579

      Pages: 701-705

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2007 Final Research Report Summary
    • Peer Reviewed
  • [Journal Article] Evaluation of OKI SOI technology2007

    • Author(s)
      池上 陽一(KEK), 他
    • Journal Title

      Nucl. Instr. and Meth A 579

      Pages: 706-711

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2007 Final Research Report Summary
    • Peer Reviewed
  • [Journal Article] R & D of a pixel sensor based on 0.15 μm fully depleted SOI technology2007

    • Author(s)
      Toru Tsuboyama, et. al.
    • Journal Title

      Nucl. Instru. And Method. A582

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2007 Final Research Report Summary
  • [Journal Article] Total Dose Effects on 0.15μ m FD-SOI CMOS Transistors2007

    • Author(s)
      Hirokazu Ikeda
    • Journal Title

      IEEE Nuclear Science Symposium Conference Record N44-6

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2007 Final Research Report Summary
  • [Journal Article] SOI pixel developments in a 0.15 μ m technology2007

    • Author(s)
      Yasuo Arai
    • Journal Title

      2007 IEEE Nuclear Science Symposium Conference Record. N4-2

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2007 Final Research Report Summary
  • [Journal Article] Deep sub-micron FE-SOI for front-end application2007

    • Author(s)
      Hirokazu Ikeda, et. al.
    • Journal Title

      Nucl. Instru. And Method. A579

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2007 Final Research Report Summary
  • [Journal Article] Evaluation of OKI SOI technology2007

    • Author(s)
      Youichi Ikegami, et. al.
    • Journal Title

      Nucl. Instru. And Method. A579

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2007 Final Research Report Summary
  • [Journal Article] "R & D of a pixel ssensor based on 0.15 μm fully depleted SOI technology"2007

    • Author(s)
      坪山 透, 他
    • Journal Title

      Nucl.Instr.and Meth A 582

      Pages: 861-865

    • Related Report
      2007 Annual Research Report
    • Peer Reviewed
  • [Journal Article] "Total Dose Effects on 0.15μm FD-SOI CMOS Transistors",2007

    • Author(s)
      池田 博一
    • Journal Title

      2007 IEEE Nuclear Science Symposium Conference Record N44-6

      Pages: 2173-2177

    • Related Report
      2007 Annual Research Report
    • Peer Reviewed
  • [Journal Article] "SOI pixel developments in a 0.15μm technology"2007

    • Author(s)
      新井 康夫, 他
    • Journal Title

      IEEE Nuclear Science Symposium Conference Record, N44-2

      Pages: 1040-1046

    • Related Report
      2007 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Deep sub-micron FD-SOI for front-end application2007

    • Author(s)
      池田 博一, 他
    • Journal Title

      Nucl.Instr.and Meth A 579

      Pages: 701-705

    • Related Report
      2007 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Evaluation of OKI SOI technology2007

    • Author(s)
      池上 陽一(KEK), 他
    • Journal Title

      Nucl.Instr.and Meth A 579

      Pages: 706-711

    • Related Report
      2007 Annual Research Report
    • Peer Reviewed
  • [Presentation] Evaluation of SOI pixel sensor2008

    • Author(s)
      Hirokazu Ishino
    • Organizer
      Annual meeting of Physics Society of Japan
    • Place of Presentation
      Kinki University, Osaka, Japan
    • Year and Date
      2008-03-26
    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2007 Final Research Report Summary
  • [Presentation] SOIピクセルセンサーの評価2008

    • Author(s)
      石野 宏和, 他
    • Organizer
      日本物理学会
    • Place of Presentation
      近畿大学
    • Year and Date
      2008-03-26
    • Related Report
      2007 Annual Research Report
  • [Presentation] Electronics and Sensor Study with the OKI SOI process2007

    • Author(s)
      新井 康夫
    • Organizer
      , Topical Workshop on Electronics for Particle Physics (TWEPP-07)
    • Place of Presentation
      チェコ・プラハ
    • Year and Date
      2007-09-03
    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2007 Final Research Report Summary
  • [Presentation] Electronics and Sensor Study With the OKI SOI process2007

    • Author(s)
      Yasuo Arai
    • Organizer
      Topical Workshop on Elecrtonics for Particle Physics(TWEPP-07)
    • Place of Presentation
      Plague, Czech Republic
    • Year and Date
      2007-09-03
    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2007 Final Research Report Summary
  • [Presentation] "Electronics and Sensor Study with the OKI SOI process"2007

    • Author(s)
      新井 康夫
    • Organizer
      Topical Workshop on Electronics for Particle Physics(TWEPP-07)
    • Place of Presentation
      チェコ・プラハ
    • Year and Date
      2007-09-03
    • Related Report
      2007 Annual Research Report
  • [Presentation] SOIピクセルセンサーの評価2007

    • Author(s)
      石野宏和, 他
    • Organizer
      日本物理学会
    • Place of Presentation
      近畿大学
    • Year and Date
      2007-03-26
    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2007 Final Research Report Summary
  • [Remarks] 「研究成果報告書概要(和文)」より

    • URL

      http://rd.kek.jp/project/soi/index.html

    • Related Report
      2007 Final Research Report Summary
  • [Remarks]

    • URL

      http://rd.kek.jp/group/soi/

    • Related Report
      2007 Annual Research Report

URL: 

Published: 2006-04-01   Modified: 2016-04-21  

Information User Guide FAQ News Terms of Use Attribution of KAKENHI

Powered by NII kakenhi