| Budget Amount *help |
¥50,310,000 (Direct Cost: ¥38,700,000、Indirect Cost: ¥11,610,000)
Fiscal Year 2009: ¥9,100,000 (Direct Cost: ¥7,000,000、Indirect Cost: ¥2,100,000)
Fiscal Year 2008: ¥10,530,000 (Direct Cost: ¥8,100,000、Indirect Cost: ¥2,430,000)
Fiscal Year 2007: ¥10,140,000 (Direct Cost: ¥7,800,000、Indirect Cost: ¥2,340,000)
Fiscal Year 2006: ¥20,540,000 (Direct Cost: ¥15,800,000、Indirect Cost: ¥4,740,000)
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| Research Abstract |
To obtain information of geometric, electronic and molecular structures and electron transfer properties at solid/liquid interfaces, which is essential information for future electronic devices and sensors, development of methods to construct molecular layers and characterization of structures and electron transfer property have been carried out. As a result, 1. novel method for constructing molecular layers on silicon with photo- electrochemical functions was developed, 2. interfacial electronic structure change induced by adsorption of molecules was clarified by sum frequency generation (SFG) and gap-mode Raman spectroscopy, and 3. reactions at solid/liquid interfaces were monitored in situ in real time by SXS and XAFS using synchrotron radiation and SFG.
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