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Development of key technologies for the measurement of luminescence dynamics in the nano-space

Research Project

Project/Area Number 18206002
Research Category

Grant-in-Aid for Scientific Research (A)

Allocation TypeSingle-year Grants
Section一般
Research Field Applied materials science/Crystal engineering
Research InstitutionKyoto University

Principal Investigator

KAWAKAMI Yoichi  Kyoto University, 大学院・工学研究科, 教授 (30214604)

Co-Investigator(Kenkyū-buntansha) FUNATO Mitsuru  京都大学, 大学院・工学研究科, 准教授 (70240827)
ミケレット ルジェロ  京都大学, 工学研究科, 京都ナノテククラスター博士研究員 (50397600)
Research Collaborator MICHELETTO Ruggero  横浜市立大学, 大学院・国際総合科学研究科, 准教授 (50397600)
Project Period (FY) 2006 – 2008
Project Status Completed (Fiscal Year 2008)
Budget Amount *help
¥48,490,000 (Direct Cost: ¥37,300,000、Indirect Cost: ¥11,190,000)
Fiscal Year 2008: ¥12,480,000 (Direct Cost: ¥9,600,000、Indirect Cost: ¥2,880,000)
Fiscal Year 2007: ¥15,340,000 (Direct Cost: ¥11,800,000、Indirect Cost: ¥3,540,000)
Fiscal Year 2006: ¥20,670,000 (Direct Cost: ¥15,900,000、Indirect Cost: ¥4,770,000)
Keywords近接場分光 / フォトルミネッセンス / 発光ダイナミクス / 先進フォトセンシング / 窒化物半導体 / 量子ナノ構造 / 局在発光制御 / バイオセンシング / マルチプローブ技術 / バイオセンシング応用 / 発光機構解明 / InGaNナノ構造 / 輻射再結合 / 非輻射再結合 / 局在励起子 / 時間空間ダイナミクス
Research Abstract

近接場光学顕微鏡(SNOM)によるInGaN/GaN量子井戸(QW)の詳細なルミネッセンスマッピングを行い,青色発光QWにおける発光中心への励起子の局在(localization)や非発光中心への捕獲抑制(anti-localization)効果が観測するとともに,緑色発光QWにおける非発光再結合中心の生成と励起子の拡散・捕獲ダイナミクスを測定した。つぎに,新たに見出された半極性面QWにおいて,高い内部量子効率の緑色発光を初めて詳細に明らかにした。また,本手法を生きた細胞の振動計測に適用し,細胞状態の薬剤反応に関して新しい知見を得た。さらに,偏光異方性マッピングや高屈折率光学材料におけるプラズモン効果など,次世代のSNOM 応用に繋がる成果を得た。

Report

(4 results)
  • 2008 Annual Research Report   Final Research Report ( PDF )
  • 2007 Annual Research Report
  • 2006 Annual Research Report
  • Research Products

    (79 results)

All 2009 2008 2007 2006 Other

All Journal Article (38 results) (of which Peer Reviewed: 32 results) Presentation (33 results) Book (6 results) Remarks (1 results) Patent(Industrial Property Rights) (1 results)

  • [Journal Article] Polarization switching phenomena in semipolar In_xGa_<1-x>N/GaN quantum well active layers2008

    • Author(s)
      M. Ueda, M. Funato, K. Kojima, Y. Kawakami, Y. Narukawa, and T. Mukai
    • Journal Title

      Phys. Rev. B 78

    • Related Report
      2008 Final Research Report
    • Peer Reviewed
  • [Journal Article] Emission Color Tunable Light-emitting Diodes Composed of InGaN Multifacet Quantum Wells2008

    • Author(s)
      M. Funato, K. Hayashi, M. Ueda, Y. Kawakami, Y. Narukawa, and T. Mukai
    • Journal Title

      Appl. Phys. Lett 93

    • Related Report
      2008 Final Research Report
    • Peer Reviewed
  • [Journal Article] Excitonic Properties of Polar, Semipolar, and Nonpolar InGaN/GaN Strained Quantum Wells with Potential Fluctuations2008

    • Author(s)
      M. Funato and Y. Kawakami
    • Journal Title

      J. Appl. Phys. 103

    • Related Report
      2008 Final Research Report
    • Peer Reviewed
  • [Journal Article] Monolithic Polychromatic Light-Emitting Diodes Based on InGaN Microfacet Quantum Wells toward Tailor-Made Solid-State Lighting2008

    • Author(s)
      M. Funato, T. Kondou, K. Hayashi, S. Nishiura, M. Ueda, Y. Kawakami, Y. Narukawa, and T. Mukai
    • Journal Title

      Appl. Phys. Exp 1

    • NAID

      10024292227

    • Related Report
      2008 Final Research Report
    • Peer Reviewed
  • [Journal Article] Nanoscopic recombination processes in InGaN/GaN quantum wells emitting violet, blue, and green spectra2008

    • Author(s)
      A. Kaneta, M. Funato, and Y. Kawakami
    • Journal Title

      Phys. Rev. B 78

    • Related Report
      2008 Final Research Report
    • Peer Reviewed
  • [Journal Article] A polarization-modulation method for the near-field mapping of laterally grown InGaN samples2008

    • Author(s)
      R. Micheletto, D. Yamada, M. Allegrini, and Y. Kawakami
    • Journal Title

      Optics Express 16

      Pages: 6889-6895

    • Related Report
      2008 Final Research Report
    • Peer Reviewed
  • [Journal Article] Tenfold improved sensitivity using high refractive-index substrates for surface plasmon sensing2008

    • Author(s)
      R. Micheletto, K. Hamamoto, T. Fujii and Y, Kawakami
    • Journal Title

      Appl. Phys. Lett 93

    • NAID

      120001462528

    • Related Report
      2008 Final Research Report
    • Peer Reviewed
  • [Journal Article] A polarization-modulation method for the near-field mapping of laterally grown InGaN samples2008

    • Author(s)
      R. Micheletto, D. Yamada, M. Allegrini, Y. Kawakami
    • Journal Title

      Optics Express 16

      Pages: 6889-6895

    • Related Report
      2008 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Excitonic properties of polar, semipolar, and nonpolar InGaN/GaN strained quantum wells with potential fluctuations2008

    • Author(s)
      M. Funato, Y. Kawakami
    • Journal Title

      Journal of Applied Physics 103

    • Related Report
      2008 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Nanoscopic recombination processes InGaN/GaN quantum wells emitting violet. blue, and green spectra2008

    • Author(s)
      A. Kaneta, M. Funato, Y. Kawakami
    • Journal Title

      Physical Review B 78

    • Related Report
      2008 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Polarization switching phenomena in semipolar In_xGa_<1-x>N/GaN quantum well active layers2008

    • Author(s)
      M. Ueda, M. Funato, K. Kojima, Y. Kawakami, Y. Narukawa, T. Mukai
    • Journal Title

      Physical Review B 78

    • Related Report
      2008 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Monolithic polychromatic light-emitting diodes based on InGaN microfacet quantum wells toward tailor-made solid-state lighting2008

    • Author(s)
      M. Funato, T. Kondou, K. Hayashi, S. Nishiura, M. Ueda, Y. Kawakami, Y. Narukawa, T. Mukai
    • Journal Title

      Applied Physics Express 1

    • NAID

      10024292227

    • Related Report
      2008 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Emission color tunable light-emitting diodes composed of InGaN multifacet qauantum wells2008

    • Author(s)
      M. Funato, K. Hayashi, M. Ueda, Y. Kawakami. Y. Narukawa, T. Mukai
    • Journal Title

      Applied Physics Letters 93

    • Related Report
      2008 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Tenfold improved sensitivity using high refractive-index substrates for surface plasmon sensing2008

    • Author(s)
      R. Micheletto, K. Hamamoto, T. Fujii, Y. Kawakami
    • Journal Title

      Applied Physics Letters 93

    • NAID

      120001462528

    • Related Report
      2008 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Optical nanometer-scale sensing of mechanical vibrations with a planar glass at critical angle2007

    • Author(s)
      R. Micheletto, K. Hamamoto, and Y. Kawakami
    • Journal Title

      Appl. Phys. Lett 90

    • Related Report
      2008 Final Research Report
    • Peer Reviewed
  • [Journal Article] Efficient green emission from(11-22)InGaN/GaN quantum wells on GaN microfacets probed by scanning near field optical microscopy2007

    • Author(s)
      Y. Kawakami, K. Nishizuka, D. Yamada, A. Kaneta, M. Funato, Y. Narukawa, and T. Mukai
    • Journal Title

      Appl. Phys. Lett 90

    • Related Report
      2008 Final Research Report
    • Peer Reviewed
  • [Journal Article] Interplay of built-in potential and piezoelectric field on carrier recombination in green light emitting InGaN quantum wells2007

    • Author(s)
      U. T. Schwarz, H. Braun, K. Kojima, Y. Kawakami, S. Nagahama, and T. Mukai
    • Journal Title

      Appl. Phys. Lett 91

    • Related Report
      2008 Final Research Report
    • Peer Reviewed
  • [Journal Article] Acoustical nanometre scale vibrations of live cells detected by a near-field optical setup2007

    • Author(s)
      R. Piga, R. Micheletto, and Y. Kawakami
    • Journal Title

      Optics Express 15

      Pages: 5589-5594

    • Related Report
      2008 Final Research Report
    • Peer Reviewed
  • [Journal Article] Comparison between optical gain spectra of In_xGa_<1-x>N/In_<0.02>Ga_<0.98>N laser diodes emitting at 404 nm and 470 nm2007

    • Author(s)
      K. Kojima, M. Funato, Y. Kawakami, H. Braun, U. T. Schwarz, S. Nagahama, and T. Mukai
    • Journal Title

      Phys. Stat. Sol. (A) 204

      Pages: 2108-2111

    • Related Report
      2008 Final Research Report
    • Peer Reviewed
  • [Journal Article] Artefacts in polarization modulation scanning near-field optical microscopes2007

    • Author(s)
      R. Micheletto, M. Allegrini, and Y. Kawakami
    • Journal Title

      Journal of Optics A: Pure and Applied Optics 9

      Pages: 431-434

    • Related Report
      2008 Final Research Report
    • Peer Reviewed
  • [Journal Article] Optical gain spectra for near UV to aquamarine(A1,In)GaN laser diodes2007

    • Author(s)
      K. Kojima, U. T. Schwarz, M. Funato, Y. Kawakami, S. Nagahama, and T. Mukai
    • Journal Title

      Optics Express 15

      Pages: 7730-7736

    • Related Report
      2008 Final Research Report
    • Peer Reviewed
  • [Journal Article] Acoustical nanometre scale vibrations of live cells detected by a near-field optical setup2007

    • Author(s)
      R. Piga, R. Micheletto and Y. Kawakami
    • Journal Title

      Optics Express 15

      Pages: 5589-5594

    • Related Report
      2007 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Artefacts in polarization modulation scanning near-field optical microscopes2007

    • Author(s)
      R. Micheletto, M. Allegrini and Y. Kawakami
    • Journal Title

      Journal of Optics A: Pure and Applied Optics 9

      Pages: 431-434

    • Related Report
      2007 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Efficient green emission from (11-22) InGaN/GaN quantum wells on GaN2007

    • Author(s)
      Y. Kawakami, K. Nishizuka, D. Yamada, A. Kaneta, M. Funato, Y. Narukawa and T. Mukai
    • Journal Title

      Applied Physics Letters 90

    • Related Report
      2007 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Origin of high oscillator strength in green-emitting InGaN/GaN nanocolumns2006

    • Author(s)
      Y. Kawakami, S. Suzuki, A. Kaneta, M. Funato, A. Kikuchi, and K. Kishino
    • Journal Title

      Appl. Phys. Lett 89

    • Related Report
      2008 Final Research Report
    • Peer Reviewed
  • [Journal Article] Photoluminescence property of InGaN single quantum well with embedded AlGaN δ-layer2006

    • Author(s)
      J. W. Park and Y. Kawakami
    • Journal Title

      Appl. Phys. Lett 88

    • Related Report
      2008 Final Research Report
    • Peer Reviewed
  • [Journal Article] Gain suppression phenomena observed in In_xGa_<1-x>N quantum well laser diodes emitting at 470 nm2006

    • Author(s)
      K. Kojima, M. Funato, Y. Kawakami, S. Nagahama, T. Mukai, H. Braun and U.T. Schwarz
    • Journal Title

      Appl. Phys. Lett 89

    • Related Report
      2008 Final Research Report
    • Peer Reviewed
  • [Journal Article] Suppression mechanism of optical gain formation in In_xGa_<1-x>N quantum well structures due to localized carriers2006

    • Author(s)
      K. Kojima, M. Funato, Y. Kawakami, Y. Narukawa, and T. Mukai
    • Journal Title

      Solid State Communications 140

      Pages: 182-184

    • Related Report
      2008 Final Research Report
    • Peer Reviewed
  • [Journal Article] Direct correlation between nonradiative recombination centers and threading dislocations in InGaN quantum wells by near-field photoluminescence spectroscopy2006

    • Author(s)
      A. Kaneta, M. Funato, Y. Narukawa, T. Mukai and Y. Kawakami
    • Journal Title

      Phys. Stat. Sol 3

      Pages: 1897-1901

    • Related Report
      2008 Final Research Report
    • Peer Reviewed
  • [Journal Article] Carrier Transport and optical properties of InGaN SQW with embedded AlGaN δ-layer2006

    • Author(s)
      J. W. Park, A. Kaneta, M. Funato and Y. Kawakami
    • Journal Title

      IEEE J. Quantum Electron 42

      Pages: 1023-1030

    • Related Report
      2008 Final Research Report
    • Peer Reviewed
  • [Journal Article] Dichroism of diamond grains by a polarization modulated near field optical setup2006

    • Author(s)
      R. Micheletto, Y. Kawakami, C. Manfredotti, Y. Garino and M. Allegrini
    • Journal Title

      Appl. Phys. Lett 89

    • Related Report
      2008 Final Research Report
    • Peer Reviewed
  • [Journal Article] Dynamic polarization rotation in pump-and-probe transients of anisotropically strained M-plane GaN films on LiAIO_22006

    • Author(s)
      K. Omae, T. Flissikowski, P. Misra, O. Brandt, H. T. Grahn, K. Kojima and Y. Kawakami
    • Journal Title

      Phys. Stat. Sol 3

      Pages: 1862-1865

    • Related Report
      2008 Final Research Report
    • Peer Reviewed
  • [Journal Article] Direct correlation between nonradiative recombination centers and threading dislocations in InGaN qauantum wells by near-field photoluminescence2006

    • Author(s)
      A, Kaneta, M.Funato, Y.Narukawa, T.Mukai, Y.Kawakami
    • Journal Title

      Phys. Stat. Sol.(c) 3・6

      Pages: 1897-1901

    • Related Report
      2006 Annual Research Report
  • [Journal Article] Transport and optical properties of InGaN SQW with embedded AlGaN delta-layer2006

    • Author(s)
      J.W.Park, A.Kaneta, M.Funato, Y.Kawakami
    • Journal Title

      IEEE J. Quantum Electron 42・10

      Pages: 1023-1030

    • Related Report
      2006 Annual Research Report
  • [Journal Article] Photoluminescence property of InGaN single quantum well with embedded AlGaN delta-layer2006

    • Author(s)
      J.W.Park, Y.Kawakami
    • Journal Title

      Appl. Phys. Lett. 88

    • Related Report
      2006 Annual Research Report
  • [Journal Article] Origin of high oscillator strength in green-emitting InGaN/GaN nanocolumns2006

    • Author(s)
      Y.Kawakami, S.Suzuki, A.Kaneta, M.Funato, A.Kikuchi, K.Kishino
    • Journal Title

      Appl. Phys. Lett. 89

    • Related Report
      2006 Annual Research Report
  • [Journal Article] Suppression mechanism of optical gain formation in InxGal-xN quantum well structures due to localized carriers2006

    • Author(s)
      K.Kojima, M.Funato, Y.Kawakami, Y.Narukawa, T.Mukai
    • Journal Title

      Solid State Communications 140・3-4

      Pages: 182-184

    • Related Report
      2006 Annual Research Report
  • [Journal Article] Gain suppression phenomena observed in InxGal-xN quantum well laser diodes emitting at 470 nm2006

    • Author(s)
      K.Kojima, M.Funato, Y.Kawakami, S.Nagahama, T.Mukai, H.Braun, U.T.Schwarz
    • Journal Title

      Appl. Phys. Lett. 89

    • Related Report
      2006 Annual Research Report
  • [Presentation] Positive biexciton binding energy confined in a localized center formed in a single InGaN/GaN quantum disk2009

    • Author(s)
      Richard Bardoux, Akio Kaneta, M. Funato, Y. Kawakami, Akihiko Kikuchi, Katsumi Kishino
    • Organizer
      JSAP the 56th spring Meeting
    • Place of Presentation
      茨城県つくば市
    • Year and Date
      2009-03-31
    • Related Report
      2008 Annual Research Report
  • [Presentation] 非c面窒化物半導体量子井戸における価電子帯有効質量2009

    • Author(s)
      小島一信, 船戸充, 川上養一, 野田進
    • Organizer
      第56回応用物理学会関係連合講演会
    • Place of Presentation
      茨城県つくば市
    • Year and Date
      2009-03-30
    • Related Report
      2008 Annual Research Report
  • [Presentation] 極性{11-22}InGaN/GaN量子井戸における発光の空間分布2009

    • Author(s)
      上田雅也, 金田昭男, 船戸充, 川上養一
    • Organizer
      第56回応用物理学会関係連合講演会
    • Place of Presentation
      茨城県つくば市
    • Year and Date
      2009-03-30
    • Related Report
      2008 Annual Research Report
  • [Presentation] 半極性{11-22}GaNバルク基板への厚膜InGaNの成長2009

    • Author(s)
      井上大輔, 上田雅也, 船戸充, 川上養一
    • Organizer
      第56回応用物理学会関係連合講演会
    • Place of Presentation
      茨城県つくば市
    • Year and Date
      2009-03-30
    • Related Report
      2008 Annual Research Report
  • [Presentation] Characterization and Control of Recombination Dynamics in Low-dimensional InGaN-based Semiconductors2009

    • Author(s)
      Y, Kawakami, A. Kaneta, M. Ueda, and M. Funato
    • Organizer
      DPG Spring Meeting
    • Place of Presentation
      Dresden, Germany(Invited)
    • Year and Date
      2009-03-24
    • Related Report
      2008 Final Research Report
  • [Presentation] Characterization and Control of Recombination Dynamics in Low-dimensional InGaN-based Semiconductors2009

    • Author(s)
      Y. Kawakami, A. Kaneta, M. Ueda, M. Funato
    • Organizer
      DPG Spring Meeting (Invited)
    • Place of Presentation
      Dresden, Germany
    • Year and Date
      2009-03-24
    • Related Report
      2008 Annual Research Report
  • [Presentation] Multi-color light-emitting diodes based on GaN micro-structures2009

    • Author(s)
      M. Funato, Y, Kawakami, Y. Narukawa and T. Mukai
    • Organizer
      SPIE Photonic West
    • Place of Presentation
      San Jose, California, USA(Invited)
    • Year and Date
      2009-01-29
    • Related Report
      2008 Final Research Report
  • [Presentation] Multi-color light-emitting diodes based on GaN micro-structures2009

    • Author(s)
      M. Funato, Y. Kawakami, Y. Narukawa, T. Mukai
    • Organizer
      SPIE Photonic West (Invited)
    • Place of Presentation
      San Jose, California, USA
    • Year and Date
      2009-01-29
    • Related Report
      2008 Annual Research Report
  • [Presentation] Monolithic Polychromatic InGaN Light-Emitting Diodes Based on Micro-facet Structures2009

    • Author(s)
      Y, Kawakami and M. Funato
    • Organizer
      The 3rd Intern. Conf. on Display and Solid State Lighting
    • Place of Presentation
      Seoul, Korea(Invited)
    • Year and Date
      2009-01-22
    • Related Report
      2008 Final Research Report
  • [Presentation] Monolithic Polychromatic InGaN Light-Emitting Diodes Based on Micro-facet Structures2009

    • Author(s)
      Y. Kawakami, M. Funato
    • Organizer
      The 3rd Intern. Conf. on Display and Solid State Lighting (Invited)
    • Place of Presentation
      Seoul, Korea
    • Year and Date
      2009-01-21
    • Related Report
      2008 Annual Research Report
  • [Presentation] Monolithic polychromatic InGaN light-emitting diodes based on micro-facet structures2008

    • Author(s)
      M. Funato, Y. Kawakami
    • Organizer
      Intern. Meeting on Information Display, Intern. Display Manufacturing, Conf. and Asia Display 2008 (Invited)
    • Place of Presentation
      Ilsan, Korea
    • Year and Date
      2008-10-16
    • Related Report
      2008 Annual Research Report
  • [Presentation] Polarization anisotropy in semipolar InGaN/GaN quantum well active layers2008

    • Author(s)
      M. Ueda, M. Funato, Y. Narukawa, T. Mukai, Y, Kawakami Mukai and Y, Kawakami
    • Organizer
      Intern. workshop on Nitride Semiconductors
    • Place of Presentation
      Montreux, Switzerland(Invited)
    • Year and Date
      2008-10-09
    • Related Report
      2008 Final Research Report
  • [Presentation] Polarization anisotropy in semipolar InGaN/GaN quantum well active layers2008

    • Author(s)
      M. Ueda, M. Funato, Y. Narukawa, T. Mukai, Y. Kawakami
    • Organizer
      Intern, workshop on Nitride Semiconductors, (Invited)
    • Place of Presentation
      Montreux, Switzerland
    • Year and Date
      2008-10-09
    • Related Report
      2008 Annual Research Report
  • [Presentation] Controlling optical anisotropy of semipolar and nonpolar InGaN auantum wells2008

    • Author(s)
      K. Kojima, M. Funato, Y. Kawakami, S. Nasahama, T. Mukai
    • Organizer
      Intern, workshop on Nitride Semiconductors
    • Place of Presentation
      Montreux, Switzerland
    • Year and Date
      2008-10-09
    • Related Report
      2008 Annual Research Report
  • [Presentation] Highly efficient light emission based on plasmonics2008

    • Author(s)
      K. Okamoto, A. Scherer, Y. Kawakami
    • Organizer
      2008 Japan-US Nanophotonics Seminar (Invited)
    • Place of Presentation
      Miyazaki, Japan
    • Year and Date
      2008-09-25
    • Related Report
      2008 Annual Research Report
  • [Presentation] Characterization and Control of Recombination Dynamics in Low-dimensional InGaN-based Semiconductors2008

    • Author(s)
      Y. Kawakami, A. Kaneta, M. Funato, Y.Narukawa and T. Mukai
    • Organizer
      The 3rd Intern. Conf. Smart Materials Structures Systems
    • Place of Presentation
      Acireale, Sicily, Italy(Invited)
    • Year and Date
      2008-09-09
    • Related Report
      2008 Final Research Report
  • [Presentation] 半極性{11-22}InGaN/GaN量子井戸における偏光ルミネッセンスの温度特性2008

    • Author(s)
      上田雅也, 船戸充, 川上養一, 成川幸男, 向井孝志
    • Organizer
      第69回応用物理学会学術講演会
    • Place of Presentation
      愛知県春日井市
    • Year and Date
      2008-09-03
    • Related Report
      2008 Annual Research Report
  • [Presentation] プラズモニクスに基づく発光増強のメカニズム2008

    • Author(s)
      岡本晃一, 川上養一
    • Organizer
      第69回応用物理学会学術講演会
    • Place of Presentation
      愛知県春日井市
    • Year and Date
      2008-09-02
    • Related Report
      2008 Annual Research Report
  • [Presentation] Highly Efficient Light-Emitting Devices based on Plasmonics2008

    • Author(s)
      K. Okamoto, Y. Kawakami, A. Scherer
    • Organizer
      Gordon Research Conf. on Plasmonics
    • Place of Presentation
      Tilton, NH, USA
    • Year and Date
      2008-07-30
    • Related Report
      2008 Annual Research Report
  • [Presentation] Anisotropic stimulated emission and gan formation of non c plane InGaN laser diodes2008

    • Author(s)
      K. Kojima, M. Funato, Y. Kawakami, S. Nasahama, T. Mukai
    • Organizer
      27th Electronic Materials Symposium
    • Place of Presentation
      Izu, Japan
    • Year and Date
      2008-07-10
    • Related Report
      2008 Annual Research Report
  • [Presentation] Surface plasmon enhanced highly efficient light-emitting devices2008

    • Author(s)
      K. Okamoto, A. Scherer, Y. Kawakami
    • Organizer
      2nd Intern. Conf. on Functional materials and Devices (Invited)
    • Place of Presentation
      Kuala Lumpur, Malaysis
    • Year and Date
      2008-06-18
    • Related Report
      2008 Annual Research Report
  • [Presentation] Characterization and Control of Recombination Dynamics in Low-dimensional InGaN-based Semiconductors2008

    • Author(s)
      Y. Kawakami, A. Kaneta, M. Funato, Y. Narukawa, T Mukai
    • Organizer
      The 3rd Intern. Conf. Smart Materials Structures Systems (Invited)
    • Place of Presentation
      Acireale, Sicily, Italy
    • Year and Date
      2008-06-09
    • Related Report
      2008 Annual Research Report
  • [Presentation] Anisotropic Stimulated Emission and Gain Formation ofNon c Plane InGaN Laser Diodes2008

    • Author(s)
      K. Kojima, M. Funato, Y. Kawakami, S. Nagahama, T. Mukai
    • Organizer
      8th Intern. Conf. on Physics of Light-Matter Coupling in Nanostructures
    • Place of Presentation
      Tokyo, Japan
    • Year and Date
      2008-04-09
    • Related Report
      2008 Annual Research Report
  • [Presentation] Light emitting devices based on semipolar-oriented InGaN/GaN quantum wells2007

    • Author(s)
      Y, Kawakami, M. Ueda, M. Funato, Y. Narukawa and T. Mukai
    • Organizer
      The 14th Intern. Display Workshops
    • Place of Presentation
      Sapporo, Japan(Invited)
    • Year and Date
      2007-10-07
    • Related Report
      2008 Final Research Report
  • [Presentation] Relationship between Threading Dislocation and Nonradiative Recombination Centers in Green Emitting InGaN-Based Quantum, Wells Studied by Scanning Near-Field Optical Microscope2007

    • Author(s)
      A. Kaneta, M. Funato, Y. Narukawa, T. Mukai and Y, Kawakami
    • Organizer
      7th Intern. Conf. on Nitride Semiconductors
    • Place of Presentation
      Las Vegas, Nevada, USA
    • Year and Date
      2007-09-20
    • Related Report
      2008 Final Research Report
  • [Presentation] Local Spectroscopic Investigations on Semipolar InGaN-Based Nanostructures and Their Application to LEDs2007

    • Author(s)
      Y, Kawakami, A. Kaneta, K. Nishizuka, M. Ueda, K. Kojima, M. Funato, Y. Narukawa, and T. Mukai
    • Organizer
      7th Intern. Conf. on Nitride Semiconductors
    • Place of Presentation
      Las Vegas, Nevada, USA(Invited)
    • Year and Date
      2007-09-19
    • Related Report
      2008 Final Research Report
  • [Presentation] Local microscopy investigations of low dimensional nitrides2007

    • Author(s)
      Y, Kawakami, A. Kaneta, K. Nishizuka, M. Funato, Y. Narukawa and T. Mukai
    • Organizer
      7th Intern. Conf. of the PLMCN series in Havana
    • Place of Presentation
      Cub(Invited)
    • Year and Date
      2007-04-16
    • Related Report
      2008 Final Research Report
  • [Presentation] Local microscopy investigations of low dimensional nitrides2007

    • Author(s)
      Y. Kawakami, A. Kaneta, K. Nishizuka, M. Funato, Y. Narukawa and T. Mukai
    • Organizer
      7th Intern. Conf. of the PLMCN series (Invited)
    • Place of Presentation
      Havana, Cuba
    • Year and Date
      2007-04-16
    • Related Report
      2007 Annual Research Report
  • [Presentation] Photoluminescence blinking of InGaN single quantum well : a study on time correlatio2007

    • Author(s)
      R. Micheretto, S. Suzuki and Y, Kawakami
    • Organizer
      2007 American Physical Society March Meeting
    • Place of Presentation
      Denver, Colorado, USA
    • Year and Date
      2007-03-06
    • Related Report
      2008 Final Research Report
  • [Presentation] Multi-mode SNOM-PL mapping in the vicinity of nonradiative recombination center of InGaN single quantum wells2006

    • Author(s)
      A. Kaneta, M. Funato, Y. Narukawa, T. Mukai and Y, Kawakami
    • Organizer
      Intern. Workshop on Nitride Semiconductor
    • Place of Presentation
      Kyoto, Japan
    • Year and Date
      2006-10-24
    • Related Report
      2008 Final Research Report
  • [Presentation] Characterization and control of recombination dynamics in(In,Ga)N-based nanostructures2006

    • Author(s)
      Y, Kawakami
    • Organizer
      Summer school on wide-bandgap Semiconductor Quantum Structures
    • Place of Presentation
      2006Monte Verita (Ascona), Switzerland(Invited Lecture)
    • Year and Date
      2006-08-30
    • Related Report
      2008 Final Research Report
  • [Presentation] The study of InGaN SQW materials with polarization modulation SNOM2006

    • Author(s)
      R. Micheletto, D. Yamada, Y, Kawakami, M. Allegrini
    • Organizer
      Conf. on Lasers and Electro-Optics Quantum Electronics and Laser Science Conferencce
    • Place of Presentation
      Long Beach, California, USA
    • Year and Date
      2006-05-23
    • Related Report
      2008 Final Research Report
  • [Presentation] Local recombination processes in InGaN studied by temporally and spatially resolved photoluminescence spectroscopy2006

    • Author(s)
      A, Kaneta, M. Funato, Y. Kawakami, Y. Narukawa, and T. Mukai
    • Organizer
      8th Expert Evaluation & Control of Compound Semiconductor Materials & Technologies
    • Place of Presentation
      Cadiz, Spain
    • Year and Date
      2006-05-15
    • Related Report
      2008 Final Research Report
  • [Book] Assessment and control of recombination dynamics in In_xGa_<1-x>N-based quantum wells, (Materials Sci. Forum 590)2008

    • Author(s)
      Y. Kawakami, A. Kaneta, and M. Funato
    • Publisher
      Advances in Light Emitting Materials ed. by B. Monemar
    • Related Report
      2008 Final Research Report
  • [Book] Semipolar InGaN/GaN quantum wells for highly functional light emitters2008

    • Author(s)
      M. Funato, Y. Kawakami Y. Narukawa and T. Mukai(分担執筆)
    • Publisher
      Nitrides with Nonpolar Surfaces:Growth, Properties, and Devices edited by Tanya Paskova,WILEY-VCH Verlag GmbH &amp ; Co. KGaA
    • Related Report
      2008 Final Research Report
  • [Book] "Semipolar InGaN/GaN quantum wells for highly functional light emitters", Nitrides with Nonoolar Surfaces : Growth. Properties, and Devices edited by Tanya Paskova2008

    • Author(s)
      M. Funato, Y. Kawakami, Y. Narukawa, T. Mukai (分担執筆)
    • Publisher
      WILEY-VCH Verlag GmbH & Co. KGaA
    • Related Report
      2008 Annual Research Report
  • [Book] "Assessment and Modification of Recombination Dynamics in In_xGa_<1-x>N-Based Ouantum Wells". Advances in Light Emitting Materials. Materials Science Forum2008

    • Author(s)
      Y. Kawakami, A. Kaneta, M. Funato (分担執筆)
    • Publisher
      Trans Tech Publications
    • Related Report
      2008 Annual Research Report
  • [Book] 発光と受光の物理と応用2007

    • Author(s)
      川上養一(分担執筆)
    • Publisher
      培風館
    • Related Report
      2008 Final Research Report
  • [Book] 発光と受光の物理と応用 2, 3章(分担執筆)2007

    • Author(s)
      川上養一
    • Publisher
      培風館
    • Related Report
      2007 Annual Research Report
  • [Remarks]

    • URL

      http://www.optomater.kuee.kyoto-u.ac.jp/

    • Related Report
      2008 Final Research Report
  • [Patent(Industrial Property Rights)] InGaN量子井戸レーザの作成方法2007

    • Inventor(s)
      小島一信, 川上養一, 船戸充, 長濱慎一, 枡井真吾
    • Industrial Property Rights Holder
      京都大学, 日亜化学工業(株)
    • Filing Date
      2007-09-14
    • Related Report
      2008 Final Research Report

URL: 

Published: 2006-04-01   Modified: 2016-04-21  

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