Development of advanced RF-MBE growth for InN and related alloys and control of their optoelectronic properties

• Project/Area Number: 18206003
• Research Category: Grant-in-Aid for Scientific Research (A)
• Allocation Type: Single-year Grants
• Section: 一般
• Research Field: Applied materials science/Crystal engineering
• Research Institution: Ritsumeikan University
• Principal Investigator: NANISHI Yasushi Ritsumeikan University, 理工学部, 教授 (40268157)
• Co-Investigator(Kenkyū-buntansha): NAOI Hiroyuki 立命館大学, COE推進機構, 研究員 (10373101) ; NA Hyunseok 立命館大学, COE推進機構, 研究員 (80411239) ; ARAKI Tsutomu 立命館大学, 理工学部, 准教授 (20312126) ; AOYAGI Yoshinobu 立命館大学, COE推進機構, 教授 (70087469) ; YAMAGUCHI Tomohiro 立命館大学, 総合理工学・研究機構, 研究員 (50454517)
• Co-Investigator(Renkei-kenkyūsha): KANEKO Masamitsu 立命館大学, 総合理工学・研究機構, ポスドク研究員 (70374709) ; WANG Ke 立命館大学, 総合理工学・研究機構, ポスドク研究員 (60532223)
• Project Period (FY): 2006 – 2008
• Project Status: Completed (Fiscal Year 2008)
• Budget Amount: ¥50,700,000 (Direct Cost: ¥39,000,000、Indirect Cost: ¥11,700,000); Fiscal Year 2008: ¥7,410,000 (Direct Cost: ¥5,700,000、Indirect Cost: ¥1,710,000); Fiscal Year 2007: ¥7,410,000 (Direct Cost: ¥5,700,000、Indirect Cost: ¥1,710,000); Fiscal Year 2006: ¥35,880,000 (Direct Cost: ¥27,600,000、Indirect Cost: ¥8,280,000)
• Keywords: エピタキシャル成長 / 窒化インジウム / 分子線エピタキシー / 分子線エピタキシー法 / p型ドーピング / ヘテロ界面 / インターミキシング / オーミックコンタクト / InN / InGaN / RF-MBE / p形ドーピング / MIS構造 / 窒素ラジカル / キャリア濃度 / 結晶性

Research Abstract

RF-MBE法を用いたInNとその関連混晶の成長に特有な本質的課題(結晶高品質化とp型の実現、接合の形成、ヘテロ・ナノ構造制御等)に取り組み、デバイス応用へ向けた光・電子物性制御の基本検討を実施した。高In組成InGaNへのMgドーピングによるp型伝導制御、InN MISダイオードおよびオーミック電極特性、GaN/InN、AlN/InNヘテロ界面におけるインターミキシングに関する知見を得た。

Research Products

• [Journal Article] Appl. Phys (2009)
  • Author(s): T. Yamaguchi and Y. Nanishi
  • Journal Title: Express 2
  • Peer Reviewed
• [Journal Article] Novel InN growth method under In-rich condition on GaN/Al_2O_3 (0001) templates, phys (2009)
  • Author(s): T. Yamaguchi, D. Muto, T. Araki, N. Maeda, and Y. Nanishi
  • Journal Title: stat. sol (c)6
  • Peer Reviewed
• [Journal Article] Growth of M-plane(10-10) InN on LiAlO_2(100) Substrate, phys (2009)
  • Author(s): Y. Takagi, D. Muto, T. Yamaguchi, T. Araki, Y. Nanishi
  • Journal Title: stat. sol (c)6
  • Peer Reviewed
• [Journal Article] TEM Characterization of M-plane InN Grown on (100) LiAlO_2 Substrate by RF-MBE, phys (2009)
  • Author(s): H. Nozawa, Y. Takagi, S. Harui, D. Muto, T. Yamaguchi, T. Araki, Y. Nanishi
  • Journal Title: stat. sol (c)6
  • Peer Reviewed
• [Journal Article] Growth and characterization of N-polar and In-polar InN films by RF-MBE, J (2009)
  • Author(s): T. Yamaguchi, D. Muto, T. Araki, and Y. Nanishi
  • Journal Title: Cryst. Growth 311 Pages: 2780-2782
  • Peer Reviewed
• [Journal Article] Fabrication of Position-Controlled InN Nanocolumns by ECR-MBE (2009)
  • Author(s): T. Araki, D. Fukuoka, H. Tamiya, S. Harui, T. Yamaguchi, H. Miyake, K. Hiramatsu, Y. Nanishi
  • Journal Title: SPIE Photonics West 2009 Proceedings 7216 72160N Pages: 1-8
  • Peer Reviewed
• [Journal Article] Fabrication of Position-Controlled InN Nanocolumns by ECR-MBE (2009)
  • Author(s): T. Araki, D. Fukuoka, H. Tamiya, S. Harui, T. Yamaguchi, H. Miyake, K. Hiramatsu, Y. Nanishi
  • Journal Title: SPIE Photonics West 2009 Proceedings 7216
  • Peer Reviewed
• [Journal Article] Growth and characterization of N-polar and In-polar InN films by RF-MBE (2009)
  • Author(s): T. Yamaguchi, D. Muto, T. Araki, N. Maeda, Y. Nanishi
  • Journal Title: J. Cryst. Growth (In press)
  • Peer Reviewed
• [Journal Article] TEM Characterization of M-plane InN Grown on (100) LiAlO2 Substrate by RF-MBE (2009)
  • Author(s): H. Nozawa, Y. Takagi, S. Harui, D. Muto, T. Yamaguchi, T. Araki, Y. Nanishi
  • Journal Title: phys. stat. sol. (c) 6(In press)
  • Peer Reviewed
• [Journal Article] Growth of M-plane(10-10) InN on LiAlO_2 (100) Substrate (2009)
  • Author(s): Y. Takagi, D. Muto, T. Yamaguchi, T. Araki, Y. Nanishi
  • Journal Title: phys. stat. sol. (c) 6(In press)
  • Peer Reviewed
• [Journal Article] Transmission Electron Microscopy Characterization of Position-Controlled InN Nanocolumns, Jpn (2008)
  • Author(s): S. Harui, H. Tamiya, T. Akagi, H. Miyake, K. Hiramatsu, T. Araki and Y. Nanishi
  • Journal Title: J. Appl. Phys 47 Pages: 5330-5332
  • Peer Reviewed
• [Journal Article] Correlation Between Threading Dislocations and Nonradiative Recombination Centers in InN Observed by IR Cathodoluminescence (2008)
  • Author(s): T. Akagi, K. Kosaka, S. Harui, D. Muto, H. Naoi, T. Araki, Y. Nanishi
  • Journal Title: Journal of Electronic Materials 37 Pages: 603-606
  • Peer Reviewed
• [Journal Article] Transmission Electron Microscopy Characterization of Position-Controlled InN Nanocolumns (2008)
  • Author(s): S. Harui, H. Tamiya, T. Akagi, H. Miyake, K. Hiramatsu, T. Araki, Y. Nanishi
  • Journal Title: Jpn. J. Appl. Phys. 47 Pages: 5330-5332
  • NAID: 40016161747
  • Peer Reviewed
• [Journal Article] Photoreflectance of InN and InN : Mg layers : An evidence for Fermi level shift to wards the valence band upon Mg doping in InN (2008)
  • Author(s): R. Kudrawiec, T. Suski, J. Serafinczuk, J. Misiewicz, D. Muto, Y. Nanishi
  • Journal Title: Appl. Phys. Lett. 93
  • Peer Reviewed
• [Journal Article] Correlation Between Threading Dislocations and Nonradiative Recombination Centers in InN Observed by IR Cathodoiuminescence (2008)
  • Author(s): T.Akagi, K.Kosaka, S.Harui, D.Muto, H.Naoi, T.Araki, Y.Nanishi
  • Journal Title: Journal of Electronic Materials 37 Pages: 603-606
  • Peer Reviewed
• [Journal Article] Transmission Electron Microscopy Characterization of Position-Controlled InN Nanocolumns (2008)
  • Author(s): S.Harui, H.Tamiya, T.Akagi, HMiyake, Ii.Hiramatsu, T.Arakiand, Y.Nanishi
  • Journal Title: Jpn. J.Appl. Phys.
  • NAID: 40016161747
  • Peer Reviewed
• [Journal Article] Thermal and Chemical Stabilities of In-and N-Polar InN Surfaces, phys (2007)
  • Author(s): H. Naoi, D. Muto, T. Hioka, Y. Hayakawa, A. Suzuki, T. Araki, and Y. Nanishi
  • Journal Title: stat. sol 244 Pages: 1834-1838
  • Peer Reviewed
• [Journal Article] Mg-doped N-polar InN Grown by RF-MBE, Mater (2007)
  • Author(s): D. Muto, H. Naoi, S. Takado, H. Na, T. Araki, and Y. Nanishi
  • Journal Title: Res. Soc. Symp. Proc 955
  • Peer Reviewed
• [Journal Article] Position-Controlled InN Nano-dot Growth on Patterned Substrates by ECR-MBE, Mater. Res (2007)
  • Author(s): T. Yamaguchi, H. Naoi, T. Araki, and Y. Nanishi
  • Journal Title: Soc. Symp. Proc 955
  • Peer Reviewed
• [Journal Article] Microstructure of A-plane InN grown on R-plane Sapphire by ECR-MBE, phys (2007)
  • Author(s): S. Watanabe, Y. Kumagai, A. Tsuyuguchi, H. Naoi, T. Araki, Y. Nanishi
  • Journal Title: stat. sol (c)4 Pages: 2556-2559
  • Peer Reviewed
• [Journal Article] Growth of A-plane(11-20) In-rich InGaN on r-plane(10-12) sapphire by RF-MBE, phys (2007)
  • Author(s): M. Noda, Y. Kumagai, S. Takado, D. Muto, H. Na, H. Naoi, T. Araki, Y. Nanishi
  • Journal Title: stat. sol (c)4 Pages: 2560-2563
  • Peer Reviewed
• [Journal Article] Growth of In-rich InAlN films on(0001) sapphire by RF-MBE and their properties (2007)
  • Author(s): H. Naoi, K. Fujishima, S. Takado, M. Kurouchi, D, Muto, T. Araki, H. Na, and Y. Nanishi
  • Journal Title: Journal of Electronic Materials 36 Pages: 1313-1319
  • Peer Reviewed
• [Journal Article] Effect of low temperature InGaN interlayers on structural and optical properties of In-rich InGaN, J (2007)
  • Author(s): H. Na, S. Takado, S. Sawada, M. Kurouchi, T. Akagi, H. Naoi, T. Araki, and Y. Nanishi
  • Journal Title: Cryst. Growth 300 Pages: 177-181
  • Peer Reviewed
• [Journal Article] Growth of InN nanocolumns by RF-MBE, J (2007)
  • Author(s): S. Nishikawa, Y. Nakao, H. Naoi, T. Araki, H. Na, and Y. Nanishi
  • Journal Title: Cryst. Growth 301-302 Pages: 490-495
  • Peer Reviewed
• [Journal Article] Thermal and Chemical Stabilities of In-and N-Polar InN Surfaces (2007)
  • Author(s): H.Naoi, D.Muto, T.Hioka, Y.Hayakana, A.Suzuki, T.Araki, and Y.Nanishi
  • Journal Title: phvs.stat.sol.(b) 224 Pages: 1834-1838
  • Peer Reviewed
• [Journal Article] Mg-doped N-polar InN Grown by RF-MBE (2007)
  • Author(s): D.Muto, H.Naoi, S.Takado, H.Na, T.Araki, and Y.Nanishi
  • Journal Title: Mater.Res.Soc.Symp.Proc 955
  • Peer Reviewed
• [Journal Article] Position-Controlled InN Nano-dot Growth on Patterned Substrates by ECR-MBE (2007)
  • Author(s): T.Yamaguchi, H.Naoi, T.Araki, and Y.Nanishi
  • Journal Title: Mater.Res.Soc.Sump.Proc 955
  • Peer Reviewed
• [Journal Article] Role of localized donor states in transport and photoluminescence of InN revealed by hydrostatic pressure studies (2007)
  • Author(s): T.Susuki, A.Kaminska, G.Franssen, H.Teisseyre, L.H.Dmowski, J.A.PlesieNicz, H.L.Lu, W.J.Schaff, M.Iiurouchi, and Y.Nanishi
  • Journal Title: phvs.stat.sol.(b) 224 Pages: 1825-1828
  • Peer Reviewed
• [Journal Article] Microstructure of A-plane InN grown on R-plane Sapphire by ECR-MBE (2007)
  • Author(s): S.Watanabe,Y.Kumagai,A.Tsuyuguchi,H.Naoi,T.Araki,Y.Nanishi
  • Journal Title: phvs.stat.sol.(c) 4 Pages: 2556-2559
  • Peer Reviewed
• [Journal Article] M.Noda, Y.Kumagai, S.Takado, D.Muto, H.Na, H.Naoi, T.Araki, Y.Nanishi (2007)
  • Author(s): M.Noda, Y.Itumagai, S.Takado, D.Muto, H.Na, H.Naoi, T.Araki, Y.Nanishi
  • Journal Title: phvs.stat.sol.(c) 4 Pages: 2560-2563
  • Peer Reviewed
• [Journal Article] Growth of In-rich InAIN films on(0001) sapphire by RF-MBE and their properties (2007)
  • Author(s): H.Naoi, K.Fuiishima, S.Takado, M.Kurouchi, D.Muto, T.Araki, H.Na, and Y.Nanishi
  • Journal Title: Journal of Electronic Materials 36 Pages: 1313-1319
  • Peer Reviewed
• [Presentation] KFMによるInN表面電位の直接評価 (2009)
  • Author(s): 金子昌充, 山口智広, 名西〓之
  • Organizer: 2009年(平成21年)春季第56回応用物理学関係連合講演会
  • Place of Presentation: 筑波大学
  • Year and Date: 2009-03-31
• [Presentation] 段差AlGaN/GaN基板上へのInN再成長構造の作製と電気的特性評価 (2009)
  • Author(s): 前田就彦, 山口智広, 菊池将悟, 廣木正伸, 名西〓之
  • Organizer: 2009年(平成21年)春季第56回応用物理学関係連合講演会
  • Place of Presentation: 筑波大学
  • Year and Date: 2009-03-31
• [Presentation] AlN/InNヘテロ構造の作製と評価 (2009)
  • Author(s): 奥村昌平、山口智広、武藤大祐、荒木努、名西やす之
  • Organizer: 2009年(平成21年)春季第56回応用物理学関係連合講演会
  • Place of Presentation: 筑波大学
  • Year and Date: 2009-03-30
• [Presentation] LiAlO_2基板上C面混在M面InN薄膜の構造評価 (2009)
  • Author(s): 荒木努, 野沢浩一, 高木悠介, 武藤大祐, 山口智広, 名西〓之
  • Organizer: 2009年(平成21年)春季第56回応用物理学関係連合講演会
  • Place of Presentation: 筑波大学
  • Year and Date: 2009-03-30
• [Presentation] 低温InNバッファ層を用いた高品質A面(11-20)InNの結晶成長 (2009)
  • Author(s): 川島圭介, 山口智広, 武藤大祐, 荒木努, 名西〓之
  • Organizer: 2009年(平成21年)春季第56回応用物理学関係連合講演会
  • Place of Presentation: 筑波大学
  • Year and Date: 2009-03-30
• [Presentation] CTLM法によるAl, Ti, Ni, のInNへのコンタクト抵抗評価 (2009)
  • Author(s): 菊池将悟、前田就彦、山口智広、名西やす之
  • Organizer: 2009年(平成21年)春季第56回応用物理学関係連合講演会
  • Place of Presentation: 筑波大学
  • Year and Date: 2009-03-21
• [Presentation] Proposal of New InN Growth Method by MBE and Usefulness of This Method as Nitrogen Radical Beam Monitoring (2009)
  • Author(s): Y. Nanishi, T. Yamaguchi
  • Organizer: First International Symposium on Advanced Plasma Science and its Applications (ISPlasma 2009)
  • Place of Presentation: Nagoya University
  • Year and Date: 2009-03-10
• [Presentation] Growth and Characterization of Position-Controlled InN Nanocolumns by ECR-MBE (2009)
  • Author(s): Y. Nanishi, T. Araki
  • Organizer: PDI Topical workshop on MBE-grown Nitride Nanowires
  • Place of Presentation: Berlin, Germany
  • Year and Date: 2009-03-05
• [Presentation] Fabrication of Position-Controlled InN Nanocolumns by ECR-MBE (2009)
  • Author(s): T. Araki, D. Fukuoka, H. Tamiya, S. Harui, T. Yamaguchi, H. Miyake, K. Hiramatsu, Y. Nanishi
  • Organizer: SPIE International Symposium on Integrated Optoelectronic Devices 2009
  • Place of Presentation: San Jose Convention Center(San Jose, USA)
  • Year and Date: 2009-01-27
• [Presentation] RF-MBE法を用いたLiAlO_2基板上無極性M面InNの結晶成長および構造評価 (2008)
  • Author(s): 高木悠介, 野沢浩一, 山口智広, 荒木努, 名西〓之
  • Organizer: 電子情報通信学会
  • Place of Presentation: 名古屋工業大学(名古屋市)
  • Year and Date: 2008-11-27
• [Presentation] RF-MBE法によるR面(10-12)Sapphire基板上、半極性面InNの結晶成長 (2008)
  • Author(s): 中谷佳津彦, 川島圭介, 山口智広, 武藤大祐, 荒木努, 名西〓之
  • Organizer: 電気関係学会関西支部連合大会
  • Place of Presentation: 京都工芸繊維大学
  • Year and Date: 2008-11-09
• [Presentation] RF-MBE法を用いた高In組成In GaNに対するMg dopingの検討 (2008)
  • Author(s): 福本英太、澤田慎也、武藤大祐、山口智広、荒木努、名西やす之
  • Organizer: 第38回結晶成長国内会議(NCCG-38)
  • Place of Presentation: 仙台市戦災復興記念館
  • Year and Date: 2008-11-05
• [Presentation] RF-MBE法を用いた高In組成InGaNに対するMg dopingの検討 (2008)
  • Author(s): 福本英太, 澤田慎也, 武藤大祐, 山口智広, 荒木努, 名西〓之
  • Organizer: 第38回結晶成長国内会議(NCCG-38)
  • Place of Presentation: 仙台市戦災復興記念館(仙台市)
  • Year and Date: 2008-11-05
• [Presentation] Recent Progress of InN and In GaN Growth for Device Applications (Invited) (2008)
  • Author(s): Y. Nanishi, T. Araki, T. Yamaguchi, D. Muto
  • Organizer: International Workshop on Nitride semiconductors (IWN2008)
  • Place of Presentation: Montreux, Switzerland
  • Year and Date: 2008-10-09
• [Presentation] Recent Progress of InN and InGaN Growth for Device Applications (Invited) (2008)
  • Author(s): Y. Nanishi, T. Araki, T. Yamaguchi, D. Muto
  • Organizer: International Workshop on Nitride semiconductors (IWN2008)
  • Place of Presentation: Montreux Convention Center (Switzeland)
  • Year and Date: 2008-10-09
• [Presentation] TEM Characterization of M-plane InN Grown on (100) LiAlO_2 Substrate by RF-MBE (2008)
  • Author(s): H. Nozawa, Y. Takagi, S. Harui, D. Muto, T. Yamaguchi, T. Araki, Y. Nanishi
  • Organizer: International Workshop on Nitride semiconductors (IWN2008)
  • Place of Presentation: Montreux Convention Center (Switzeland)
  • Year and Date: 2008-10-09
• [Presentation] Growth of M-plane(10-10) InN on LiAlO_2 (100) Substrate (2008)
  • Author(s): Y. Takagi, D. Muto, T. Yamaguchi, T. Araki, Y. Nanishi
  • Organizer: International Workshop on Nitride semiconductors (IWN2008)
  • Place of Presentation: Montreux Convention Center (Switzeland)
  • Year and Date: 2008-10-09
• [Presentation] New insight into the free carrier properties of InN (2008)
  • Author(s): V. Darakchieva, T. Hofmann, M. Schubert, B. Monemar, H. Lu, W. J. Schaff, C. -L. Y. Hsiao, T. -W. Liu, L. -C. Chen, D. Muto, Y. Nanishi
  • Organizer: International Workshop on Nitride semiconductors (IWN2008)
  • Place of Presentation: Montreux Convention Center (Switzeland)
  • Year and Date: 2008-10-08
• [Presentation] GaN/InNヘテロ構造の成長と評価 (2008)
  • Author(s): 武藤大祐、山口智広、荒木努、名西やす之
  • Organizer: 2008年(平成20年)秋季第69回応用物理学会学術講演会
  • Place of Presentation: 中部大学
  • Year and Date: 2008-09-04
• [Presentation] GaN/InNヘテロ構造の成長と評価 (2008)
  • Author(s): 武藤大祐, 山口智広, 荒木努, 名西〓之
  • Organizer: 2008年(平成20年)秋季第69回応用物理学会学術講演会
  • Place of Presentation: 中部大学(春日井市)
  • Year and Date: 2008-09-04
• [Presentation] CTLM法によるInNオーミックコンタクト抵抗の評価 (2008)
  • Author(s): 菊池将悟、佐藤丈、檜木啓宏、山口智広、前田就彦、荒木努、名西やす之
  • Organizer: 2008年(平成20年)秋季第69回応用物理学会学術講演会
  • Place of Presentation: 中部大学
  • Year and Date: 2008-09-03
• [Presentation] CTLM法によるInNオーミックコンタクト抵抗の評価 (2008)
  • Author(s): 菊池将悟, 佐藤丈, 檜木啓宏, 山口智広, 前田就彦, 荒木努, 名西〓之
  • Organizer: 2008年(平成20年)秋季第69回応用物理学会学術講演会
  • Place of Presentation: 中部大学(春日井市)
  • Year and Date: 2008-09-03
• [Presentation] TEMを用いたM面(10-10)InNの極微構造評価 (2008)
  • Author(s): 野沢浩一, 高木悠介, 春井聡, 武藤大祐, 山口智広, 荒木努, 名西〓之
  • Organizer: 2008年(平成20年)秋季第69回応用物理学会学術講演会
  • Place of Presentation: 中部大学(春日井市)
  • Year and Date: 2008-09-03
• [Presentation] LiAIO_2(100)基板上MgドープM面(10-10)lnNの結晶成長 (2008)
  • Author(s): 高木悠介, 武藤大祐, 山口智広, 荒木努, 名西〓之
  • Organizer: 2008年(平成20年)秋季第69回応用物理学会学術講演会
  • Place of Presentation: 中部大学(春日井市)
  • Year and Date: 2008-09-03
• [Presentation] Potential, Achievements and Issues of InN and Related Alloys for Device Applications (Invited), International Conference on Optical (2008)
  • Author(s): Y. Nanishi, D. Muto, M. Noda, S. Harui, T. Yamaguchi, T. Araki
  • Organizer: Optoelectronic and Photonic Materials Applications 2008 (ICOOPMA08)
  • Place of Presentation: Edmonton, Canada
  • Year and Date: 2008-07-23
• [Presentation] Potential, Achievements and Issues of InN and Related Alloys for Device Applications (Invited) (2008)
  • Author(s): Y. Nanishi, D. Muto, M. Noda, S. Harui, T. Yamaguchi, T. Araki
  • Organizer: International Conference on Optical, Optoelectronic and Photonic Materials Applications 2008 (ICOOPMA08)
  • Place of Presentation: University of ALBERTA (EDMONTON, CANADA)
  • Year and Date: 2008-07-23
• [Presentation] Fabrication and Electrical Characterization of InN MES and MIS Diode Structures (2008)
  • Author(s): S. Kikuchi, T. Sato, A. Hinoki, D. Muto, N. Maeda, T. Araki, and Y. Nanishi
  • Organizer: 27th Electronic Materials Symposium (EMS27)
  • Place of Presentation: ラフォーレ修善寺
  • Year and Date: 2008-07-10
• [Presentation] Growth of Position-Controlled InN Nanocolumns by ECR-MBE on Hole-Pattemed GaN Template (2008)
  • Author(s): T. Araki, D. Fukuoka, H. Tamiya, S. Harui, T. Yamaguchi, H. Miyake, K. Hiramatsu, Y. Nanishi
  • Organizer: 27th Electronic Materials Symposium (EMS27)
  • Place of Presentation: ラフォーレ修善寺(静岡県伊豆市)
  • Year and Date: 2008-07-10
• [Presentation] Fabrication and Electrical Characterization of InN MES and MIS Diode Structures (2008)
  • Author(s): S. Kikuchi, T. Sato, A. Hinoki, D. Muto, N. Maeda, T. Araki Y. Nanishi
  • Organizer: 27th Electronic Materials Symposium (EMS27)
  • Place of Presentation: ラフォーレ修善寺(静岡県伊豆市)
  • Year and Date: 2008-07-10
• [Presentation] Study on Initial Growth Process of Position-Controlled InN Nanocolumns by ECR-MBE (2008)
  • Author(s): T. Araki, D. Fukuoka, H. Tamiya, S. Harui, T. Yamaguchi, H. Miyake, K. Hiramatsu, Y. Nanishi
  • Organizer: The Second International Symposium on Growth of III-Nitrides (ISGN-2)
  • Place of Presentation: Laforet Shuzenji (Japan)
  • Year and Date: 2008-07-07
• [Presentation] Growth and characterization of N-polar and In-polar InN films by RF-MBE (2008)
  • Author(s): T. Yamaguchi, D. Muto, T. Araki, Y. Nanishi
  • Organizer: The Second International Symposium on Growth of III-Nitrides (ISGN-2)
  • Place of Presentation: Laforet Shuzenji (Japan)
  • Year and Date: 2008-07-07
• [Presentation] GaN and InN intermixing during RF-MBE growth observed by XRD (2008)
  • Author(s): D. Muto, T. Yamaeuchi, S. Sawada, T. Araki, Y. Nanishi
  • Organizer: 2008Electronic Materials Conference
  • Place of Presentation: University of California (Santa Barbara, USA)
  • Year and Date: 2008-06-26
• [Presentation] Photoreflectance and contactless electroreflectancc investigations of the energy gap and band bending for un-doped and Mg-doped InN layers (2008)
  • Author(s): R. Kudrawiec, J. Misiewicz, T. Suski, D. Muto, Y. Nanishi
  • Organizer: XXXVII International School on the Physics of Semiconducting Compounds "Jaszowiec 2008"
  • Place of Presentation: Gwarek Hotel (Poland)
  • Year and Date: 2008-06-07
• [Presentation] GaN/InN界面におけるInとGaのインターミキシング (2008)
  • Author(s): 武藤大祐、山口智広、澤田慎也、荒木努、名西やす之
  • Organizer: 2008年(平成20年)春季第55回応用物理学関係連合講演会
  • Place of Presentation: 日本大学理工学部
  • Year and Date: 2008-03-27
• [Presentation] InN MISダイオードの順方向電気的特性 (2008)
  • Author(s): 佐藤丈、檜木啓宏、武藤大祐、前田就彦、荒木努、名西やす之
  • Organizer: 2008年(平成20年)春季第55回応用物理学関係連合講演会
  • Place of Presentation: 日本大学理工学部
  • Year and Date: 2008-03-27
• [Presentation] X線光電子分光法によるMgドープInNの表面評価 (2008)
  • Author(s): 緩利 友晶紀、野田 光彦、武藤 大祐、山口 智広、金子 昌充、荒木 努、名西 憾之
  • Organizer: 2008年(平成20年)春季第55回応用物理学関係連合講演会
  • Place of Presentation: 日本大学理工学部 船橋キャンパス
  • Year and Date: 2008-03-27
• [Presentation] A面 (11-20) InNに対するMgドーピングの効果 (2008)
  • Author(s): 野田 光彦、武藤 大祐、山口 智広、荒木 努、名西 憾之
  • Organizer: 2008年(平成20年)春季第55回応用物理学関係連合講演会
  • Place of Presentation: 日本大学理工学部 船橋キャンパス
  • Year and Date: 2008-03-27
• [Presentation] InN MISダイオードの順方向電気的特性 (2008)
  • Author(s): 佐藤 丈、檜木 啓宏、武藤 大祐、前田 就彦、荒木 努、名西 憾之
  • Organizer: 2008年(平成20年)春季第55回応用物理学関係連合講演会
  • Place of Presentation: 日本大学理工学部 船橋キャンパス
  • Year and Date: 2008-03-27
• [Presentation] M面(10-10) InN結晶成長および電気的特性の評価 (2008)
  • Author(s): 高木 悠介、野田 光彦、武藤 大祐、山口 智広、荒木 努、名西 憾之
  • Organizer: 2008年(平成20年)春季第55回応用物理学関係連合講演会
  • Place of Presentation: 日本大学理工学部 船橋キャンパス
  • Year and Date: 2008-03-27
• [Presentation] GaN/InN界面におけるInとGaのインターミキシング (2008)
  • Author(s): 武藤 大祐、山口 智広、澤田 慎也、荒木 努、名西 憾之
  • Organizer: 2008年(平成20年)春季第55回応用物理学関係連合講演会
  • Place of Presentation: 日本大学理工学部 船橋キャンパス
  • Year and Date: 2008-03-27
• [Presentation] TEMを用いたN極性MgドープInNの極微構造評価 (2008)
  • Author(s): 野沢 浩一、春井 聡、武藤 大祐、山口 智広、荒木 努、名西 憾之
  • Organizer: 2008年(平成20年)春季第55回応用物理学関係連合講演会
  • Place of Presentation: 日本大学理工学部 船橋キャンパス
  • Year and Date: 2008-03-27
• [Presentation] 低速陽電子ビームを用いたMgドープInNの点 (2008)
  • Author(s): 成田 幸輝、伊東 健一、中森 寛人、本多 典宏、上殿 明良、武藤 大祐、荒木 努、名西 憾之、石橋 章司
  • Organizer: 2008年(平成20年)春季第55回応用物理学関係連合講演会
  • Place of Presentation: 日本大学理工学部 船橋キャンパス
  • Year and Date: 2008-03-27
• [Presentation] InN MISダイオードの順方向電気的特性 (2008)
  • Author(s): 佐藤丈、 檜木啓宏、武藤大祐、前田就彦、荒木努、名西〓之
  • Organizer: 2008年(平成20年)春季 第55回応用物理学関係連合講演会
  • Place of Presentation: 日本大学理工学部 船橋キャンパス
  • Year and Date: 2008-03-27
• [Presentation] Growth and structura investigation of high-In-com Position InGaN/GaN Nanostructure (2008)
  • Author(s): T.Yamaguchi, A.Pretorius, A.Rosenauer, D.Hommel, T.Araki, and Y.Nanishi
  • Organizer: Workshop on Frontie Photonic and Electronic Materials and Devices-2008 JaPanese-German-SPanishpoint Workshop-
  • Place of Presentation: 日本大学理工学部 船橋キャンパス
  • Year and Date: 2008-03-05
• [Presentation] RF-MBE Growth and Properties of Mg-doped Polar and Non-polar InN and In-rich InGaN (Invited) (2008)
  • Author(s): Y. Nanishi
  • Organizer: Topical Workshop on achieving p-type InN
  • Place of Presentation: Hakone, Japan
  • Year and Date: 2008-03-04
• [Presentation] RF-MBE Growthand Properties of Mg-doped Polar and Non-PoIar InN and In-rich InGaN (2008)
  • Author(s): Y.Nanishi
  • Organizer: Topical Workshop on achieving p-type InN
  • Place of Presentation: The Prince HakoneJ(Hakoneapan)
  • Year and Date: 2008-03-04
• [Presentation] RF-MBE Growth and Properties of Mg-doped Polar and Non-polar InN and In-rich InGaN (2008)
  • Author(s): Y. Nanishi
  • Organizer: Topical Workshop on achieving p-type InN
  • Place of Presentation: The Prince Hakone (Hakone, Japan)
  • Year and Date: 2008-03-04
• [Presentation] TEM Characterization of position-controlled InN nanocolumns (2007)
  • Author(s): S.Harui, H.Tamiya, T.Araki, H.Mivake, K.Hiramatsu, T.Araki, Y.Nanishi
  • Organizer: 2007 MRS Fall MEETING
  • Place of Presentation: Hynes Convention Center&Sheraton Boston Hotel(Boston,MA,USA)
  • Year and Date: 2007-11-27
• [Presentation] RF-MBE法による(100)LiAIO2基板上M面(10-10)InNの結晶成長 (2007)
  • Author(s): 高木 悠介、野田 光彦、武藤 大祐、山口 智広、荒木 努、名西 憾之
  • Organizer: 第37回結晶成長国内会議(NCCG-37)
  • Place of Presentation: 北海道大学(札幌市)
  • Year and Date: 2007-11-07
• [Presentation] MgドープA面 (11-20)InNの結晶成長と電気的特性評価 (2007)
  • Author(s): 野田 光彦、武藤 大祐、山口 智広、荒木 努、名西 憾之
  • Organizer: 第37回結晶成長国内会議(NCCG-37)
  • Place of Presentation: 北海道大学(札幌市)
  • Year and Date: 2007-11-07
• [Presentation] Fabrication of patterned InN nano-columns by ECR-MBE (2007)
  • Author(s): T.Araki, T.Yamaguchi, S.Harui, H.Miyake, K.Hiramatsu, Y.Nanishi
  • Organizer: 7th International Conference on Nitride Semiconductors (ICNS-7)
  • Place of Presentation: MGM GRAND HOTEL(Las Vegas,USA)
  • Year and Date: 2007-09-21
• [Presentation] Electrical Properties of P-type N-polar InN Grown by RF-MBE (2007)
  • Author(s): D.Muto, H.Naoi, S.Fukumoto, K.M.Yu, N.Miller, R.E.Jones, J.W.AltermI, E.E.Haller, T.Araki, Y.Nanishi, and W.Walukiewicz
  • Organizer: 7th International Conference on Nitride Semiconductors (ICNS-7)
  • Place of Presentation: MGM GRAND HOTEL(Las Vegas,USA)
  • Year and Date: 2007-09-21
• [Presentation] Study on surface electron accumulation on A-plane InN by electrolyte-basedcapacitance-voltage measurements (2007)
  • Author(s): M.Noda, S.Fukumoto, D.Muto, k.M.Yu, N.Miller, R.E.Jones, J.W.AltermI, E.E.Haller, H.Naoi, T.Araki, Y.Nanishi and W.Walukiewicz
  • Organizer: 7th International Conference on Nitride Semiconductors (ICNS-7)
  • Place of Presentation: MGM GRAND HOTEL(Las Vegas,USA)
  • Year and Date: 2007-09-20
• [Presentation] 水素・窒素混合プラズマ照射によるInNの表面エッチングに関する検討 (2007)
  • Author(s): 和田 伸之、澤田 慎也、山口 智弘、荒木 努、名西 憾之
  • Organizer: 2007年 (平成19年) 秋季 第68回応用物理学会学術講演会
  • Place of Presentation: 北海道工業大学(北海道札幌市手稲区)
  • Year and Date: 2007-09-06
• [Presentation] ECR-MBE法を用いた加工GaN基板上の配列制御したInNナノコラム成長 (2007)
  • Author(s): 田宮 秀敏、春井 聡、山口 泰平、赤木 孝信、三宅 秀人、平松 和政、荒木 努、名西 憾之
  • Organizer: 2007年 (平成19年) 秋季 第68回応用物理学会学術講演会
  • Place of Presentation: 北海道工業大学(北海道札幌市手稲区)
  • Year and Date: 2007-09-06
• [Presentation] 原子状水素照射によるRF-MBE成長InNの光学特性の変化 (2007)
  • Author(s): 草塩 卓矢、福田 貴之、武藤 大祐、野田 光彦、赤木 孝信、直井 弘之、荒木 努、名西 憾之
  • Organizer: 2007年 (平成19年) 秋季 第68回応用物理学会学術講演会
  • Place of Presentation: 北海道工業大学(北海道札幌市手稲区)
  • Year and Date: 2007-09-06
• [Presentation] ECV方を用いたA面InNの表面電荷蓄積層の評価 (2007)
  • Author(s): 野田 光彦、武藤 大祐、武藤 大祐、K.M.Yu, R.E.Jones, W.Walikiewicz, 山口 智広、荒木 努、名西 憾之
  • Organizer: 2007年 (平成19年) 秋季 第68回応用物理学会学術講演会
  • Place of Presentation: 北海道工業大学(北海道札幌市手稲区)
  • Year and Date: 2007-09-06
• [Presentation] P形MgドープInNの結晶成長とその電気的特性評価 (2007)
  • Author(s): 武藤 大祐、野田 光彦、K.M.Yu, J.W.Agerm, W.Walukiewicz, 山口 智広、荒木 努、名西 憾之
  • Organizer: 2007年 (平成19年) 秋季 第68回応用物理学会学術講演会
  • Place of Presentation: 北海道工業大学(北海道札幌市手稲区)
  • Year and Date: 2007-09-06
• [Presentation] TEMを用いた配列制御InNナノコラムの極微構造評価 (2007)
  • Author(s): 春井 聡、田宮 秀敏、赤木 孝信、三宅 秀人、平松 和政、荒木 努、名西 憾之
  • Organizer: 2007年 (平成19年) 秋季 第68回応用物理学会学術講演会
  • Place of Presentation: 北海道工業大学(北海道札幌市手稲区)
  • Year and Date: 2007-09-06
• [Presentation] Study on ECR-MBE Growth and Properties of A-plane InN on R-plane Sapphire (2007)
  • Author(s): T.Araki, Y.Iiumagai, S.Watanabe, T.Akagi, H.Naoi, Y.Nanishi
  • Organizer: International Conference on Crystal Growth (ICCG15)
  • Place of Presentation: Grand America and Little America hotels(SaltLake City,USA)
  • Year and Date: 2007-08-13
• [Presentation] Growthof InN hexagonal pyramids on hole-patterned GaN templates by ECR-MBE (2007)
  • Author(s): D.Fukuoka, T.Yamaguchi, S.Harui, T.Akagi, K.Hiramatsu, H.Miyake, H.Naoi, T.Araki, and Y.Nanishi
  • Organizer: International Conference on Crystal Growth (ICCG15)
  • Place of Presentation: Grand America and Little America hotels(SaltLake City,USA)
  • Year and Date: 2007-08-13
• [Presentation] Infrared Cathodoluminescence measurements of InN films (2007)
  • Author(s): T.Akagi, k.kosaka, S.Harui, H.Naoi, T.Araki, Y.Nanishi
  • Organizer: TMS 2007 ELECTRONIC MATERIALS CONFERENCE
  • Place of Presentation: University of Notre Dame(Indiana,USA)
  • Year and Date: 2007-06-21
• [Presentation] Study on Growth of Mg-doped InN by RF-MBE and its Electrical Properties (2007)
  • Author(s): D.Muto, H.Naoi, S.Takado, T.Araki, and Y.Nanishi
  • Organizer: The 19th Indium Phosphide and Related Materials Conference (IPRM2007)
  • Place of Presentation: kunibiki Messe(Matsue,Japan)
  • Year and Date: 2007-05-15
• [Book] Chapter 1-Molecular-beam epitaxy of InN, Editors : T. D. Veal, C. F. McConville, and W. J. Schaff, CRC Press/Taylor and Francis(in press) (2009)
  • Author(s): Y. Nanishi, T. Araki and T. Yamaguchi
  • Publisher: Indium Nitride and Related Alloys