| Co-Investigator(Kenkyū-buntansha) |
MAKIMOTO Toshiki 日本電信電話株式会社NTT物性科学基礎研究所, 機能物質科学研究部, 部長 (50374070)
AKASAKA Tetsuya 日本電信電話株式会社NTT物性科学基礎研究所, 機能物質科学研究部, 主任研究員 (90393735)
NISHIKAWA Atsushi 日本電信電話株式会社NTT物性科学基礎研究所, 機能物質科学研究部, 社員 (60417095)
NAKANO Hidetoshi 日本電信電話株式会社NTT物性科学基礎研究所, 量子光物性研究部, 主幹研究員 (90393793)
GOTOH Hideki 日本電信電話株式会社NTT物性科学基礎研究所, 量子光物性研究部, 主幹研究員 (10393795)
TAWARA Takehiko 日本電信電話株式会社NTT物性科学基礎研究所, 量子光物性研究部, 研究主任 (40393798)
SANADA Haruki 日本電信電話株式会社NTT物性科学基礎研究所, 量子光物性研究部, 社員 (50417094)
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| Budget Amount *help |
¥40,430,000 (Direct Cost: ¥31,100,000、Indirect Cost: ¥9,330,000)
Fiscal Year 2009: ¥8,060,000 (Direct Cost: ¥6,200,000、Indirect Cost: ¥1,860,000)
Fiscal Year 2008: ¥8,060,000 (Direct Cost: ¥6,200,000、Indirect Cost: ¥1,860,000)
Fiscal Year 2007: ¥11,960,000 (Direct Cost: ¥9,200,000、Indirect Cost: ¥2,760,000)
Fiscal Year 2006: ¥12,350,000 (Direct Cost: ¥9,500,000、Indirect Cost: ¥2,850,000)
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| Research Abstract |
We demonstrate that (0001) hexagonal boron nitrides (h-BN) are epitaxially grown on (111) Ni and (0001) sapphire substrates by metalorganic vapor phase epitaxy. A near-band-gap ultraviolet emission peak centered at energy of 5.47eV (227nm) is clearly observed in cathodoluminescence spectra at room temperature from the h-BN epitaxial layers. The photon energy dependence of the squared absorption coefficient is linear, indicating a direct band gap in the h-BN, and the optical band gap is determined to be 5.9eV. The h-BN has a promising as an optoelectronic material in the deep ultraviolet spectral region.
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