Vertically integrated ultrafast optical modulation devices using ultrahigh density quantum dots

• Project/Area Number: 18206034
• Research Category: Grant-in-Aid for Scientific Research (A)
• Allocation Type: Single-year Grants
• Section: 一般
• Research Field: Electronic materials/Electric materials
• Research Institution: Kobe University
• Principal Investigator: WADA Osamu Kobe University, 大学院工学研究科, 教授 (90335422)
• Co-Investigator(Kenkyū-buntansha): KITA Takashi 神戸大学, 大学院・工学研究科, 教授 (10221186) ; AKAHANE Kouichi 情報通信研究機構, 第1研究部門, 研究員 (50359072)
• Project Period (FY): 2006 – 2008
• Project Status: Completed (Fiscal Year 2008)
• Budget Amount: ¥43,160,000 (Direct Cost: ¥33,200,000、Indirect Cost: ¥9,960,000); Fiscal Year 2008: ¥10,010,000 (Direct Cost: ¥7,700,000、Indirect Cost: ¥2,310,000); Fiscal Year 2007: ¥15,730,000 (Direct Cost: ¥12,100,000、Indirect Cost: ¥3,630,000); Fiscal Year 2006: ¥17,420,000 (Direct Cost: ¥13,400,000、Indirect Cost: ¥4,020,000)
• Keywords: 量子ドット / 光スイッチ / ナノ材料 / 光物性 / 半導体結晶成長 / 超高速光通信 / 半導体物性 / 光アンプ / 面型光変調器 / 光通信 / 超高速光応答 / フォトニック結晶 / 多層高密度量子ドット

Research Abstract

量子ドットの形状、サイズ、歪みなどのパラメータを制御できるInAs/GaAs量子ドット結晶成長方法を開発し、量子ドットの波長、寿命時間、偏光特性などの光学的特性の制御を可能とした。さらに、多層化した量子ドットを分布反射鏡に挟んだ垂直共振器型光変調器構造を実現し、この構造の超高速全光変調デバイスとしての可能性を実証した。

Research Products

• [Journal Article] Effects of indium segregation on optical properties of nitrogen-doped InAs/GaAs quantum dots (2008)
  • Author(s): T. Inoue, M. Mamizuka, H. Mizuno, O. Kojima, T. Kita, and O. Wada
  • Journal Title: J. Appl. Phys. Vol. 104 Pages: 103532-103532
  • Peer Reviewed
• [Journal Article] Real Time Analysis of Self-Assembled InAs/GaAs Quantum Dot Growth by Probing Reflection High-Energy Electron Diffraction Chevron Image (2008)
  • Author(s): T. Kudo, T. Inoue, T. Kita, and O. Wada
  • Journal Title: J. Appl. Phys. Vol. 104 Pages: 74305-74305
  • NAID: 120002139272
  • Peer Reviewed
• [Journal Article] Photoluminescence Characteristics of Quantum Dots with Electronic States Interconnected along Growth Direction (2008)
  • Author(s): O. Kojima, H. Nakatani, T. Kita, O. Wada, K. Akahane, and M. Tsuchiya
  • Journal Title: J. Appl. Phys. Vol. 103 Pages: 113504-113504
  • Peer Reviewed
• [Journal Article] Photoluminescence Dynamics of Coupled Quantum Dots (2008)
  • Author(s): H. Nakatani, T. Kita, O. Kojima, O. Wada, K. Akahane, and M. Tsuchiya
  • Journal Title: J. of Luminescence, Vol. 128 Pages: 975-977
  • Peer Reviewed
• [Journal Article] Electron Tomography of Embedded Semiconductor Quantum Dot (2008)
  • Author(s): T. Inoue, T. Kita, O. Wada, M. Kamino, T. Yaguchi, and T. Kamino
  • Journal Title: Appl. Phys. Lett. Vol. 92 Pages: 31902-31902
  • NAID: 120001348321
  • Peer Reviewed
• [Journal Article] Photoluminescence Characteristics of Quantum Dots with Electronic States Interconnected along Growth Direction (2008)
  • Author(s): O. Koiima, H. Nakatani, T. Kita, O. Wada, K. Akahane, M. Tsuchiva
  • Journal Title: J. Appl. Phys. 103 Pages: 113504-113504
  • Peer Reviewed
• [Journal Article] Real Time Analysis of Self-Assembled InAs/GaAs Quantum Dot Growth by Probing Reflection High-Energy Electron Diffraction Chevron Image (2008)
  • Author(s): T. Kudo, T. Inoue, T. Kita, O. Wada
  • Journal Title: J. Appl. Phys. 104 Pages: 74305-74305
  • NAID: 120002139272
  • Peer Reviewed
• [Journal Article] Effects of indium segregation on optical properties of nitrogen-doped In As/GaAs quantum dots (2008)
  • Author(s): T. Inoue, M. Mamizuka, H. Mizuno, O. Kojima, T. Kita, O. Wada
  • Journal Title: J. Appl. Phys. 104 Pages: 103532-103532
  • Peer Reviewed
• [Journal Article] Electron Tomography of Embedded Semiconductor Quantum Dot (2008)
  • Author(s): T. Inoue, T. Kita, O. Wada, M. Kamino, T. Yaguchi, and T. Kamino
  • Journal Title: Appleid Physics Letters 92 Pages: 31902-31902
  • NAID: 120001348321
  • Peer Reviewed
• [Journal Article] Emission-Wavelength Extension of Nitrided InAs/GaAs Quantum Dots with Different Sizes (2007)
  • Author(s): H. Mizuno, T. Inoue, M. Kikuno, T. Kita, O. Wada, H. Mori, and H. Yasuda
  • Journal Title: J. Cryst. Growth Vol. 301-302 Pages: 709-712
  • Peer Reviewed
• [Journal Article] Multidirectional Observation of an Embedded Quantum Dot (2007)
  • Author(s): T. Kita, T. Inoue, O. Wada, M. Konno, T. Yaguchi, and T. Kamino
  • Journal Title: Appl. Phys. Lett. Vol. 90 Pages: 41911-41911
  • NAID: 120000944629
  • Peer Reviewed
• [Journal Article] Atomically Controlled Doping of Nitrogen on GaAs(001)Surface (2007)
  • Author(s): N. Shimizu, T. Inoue, T. Kita, and O. Wada
  • Journal Title: Journal of Crystal Growth 301-302 Pages: 34-37
  • Peer Reviewed
• [Journal Article] Photoluminescence Dynamics of Coupled Quantum Dots (2007)
  • Author(s): H. Nakatani, T. Kita, O. kojima, O. Wada, K. Akahane, and M. Tsuchiya
  • Journal Title: Journal of Luminescence 128 Pages: 975-977
  • Peer Reviewed
• [Journal Article] Emission-Wavelength Extension of Nitrided InAs/GaAs Quantum Dots with Different Sizes (2007)
  • Author(s): H.Mizuno
  • Journal Title: J. Cryst. Growth (印刷中)
• [Journal Article] Atomically Controlled Doping of Nitrogen on GaAs(001) Surfaces (2007)
  • Author(s): N.Shimizu
  • Journal Title: J. Cryst. Growth (印刷中)
• [Journal Article] Artificial Control of Optical Gain Polarization by Stacking Quantum Dot Layers (2006)
  • Author(s): T. Kita, N. Tamura, O. Wada, M. Sugawara, Y. Nakata, H. Ebe, and Y. Arakawa
  • Journal Title: Appl. Phys. Lett. Vol. 88 Pages: 211106-211106
  • NAID: 120000943927
  • Peer Reviewed
• [Journal Article] Artificial Control of Optical Gain Polarization by Stacking Quantum Dot Layers (2006)
  • Author(s): T.Kita
  • Journal Title: Appl. Phys. Lett. 88 Pages: 211106-211106
  • NAID: 120000943927
• [Journal Article] Emission-Wavelength Extension of InAs/GaAs Quantum Dots by Controlling Lattice-Mismatched Strain (2006)
  • Author(s): T.Inoue
  • Journal Title: Proc. 18th International Conference on Indium Phosphidc and Relatcd Materials, Princeton, May 7-11, 2006 Pages: 201-203
• [Journal Article] Bound Exciton States of Isoelectronic Centers in GaAs : N Grown by an Atomically Controlled Doping Technique (2006)
  • Author(s): T.Kita
  • Journal Title: Phys. Rev. B 74 Pages: 35213-35213
• [Presentation] 量子ドット埋め込み面型共振器構造を用いた超高速全光スイッチ (2009)
  • Author(s): 金潮淵、小島磨、田嶋良幸、喜多隆、和田修、赤羽浩一
  • Organizer: 第56回応用物理学会関係連合講演会、31p-ZF-1
  • Place of Presentation: つくば
  • Year and Date: 2009-03-31
• [Presentation] Lengthening of Exciton Lifetime owing to Expansion of Electron Envelope Functions in Stacked Quantum Dots (2008)
  • Author(s): O. Kojima, H. Nakatani, T. Kita, O. Wada, K. Akahane, M. Tsuchiya
  • Organizer: Abstr. Third International Conference on Optical, Optoelectronic Materials and Applications
  • Place of Presentation: Edmonton
• [Presentation] Optical Control of Residual Excitons for Ultrafast Nonlinear Response in GaAs Thin Films (2008)
  • Author(s): O. Kojima, A. Miyagawa, T. Kita, O. Wada, T. Isu
  • Organizer: 8th International Conference on Excitonic Processin Condensed Matter
  • Place of Presentation: 京都
• [Presentation] Semiconductor Quantum Dots and Nanostructures for Photonic Device Applications(Plenary Paper) (2007)
  • Author(s): Osamu Wada
  • Organizer: Int. Conf. Optical and Optoelectronic Properties of Materials and Applications(ICOOPMA2008)
  • Place of Presentation: London, UK
  • Year and Date: 2007-08-01
• [Presentation] Three-Dimensional Structure of A Single InAs/GaAs Self-Assembled Quantum Dot Observed by Electron Tomography (2007)
  • Author(s): T. Inoue, T. Kita, O. Wada, M. Konno, T. Yaguchi, and T. Kamino
  • Organizer: 34th International Symposium on Compound Semiconductors
  • Place of Presentation: Kyoto
• [Presentation] Real Time Probing of Self-Assembling Process Steps in InAs/GaAs Quantum Dot Growth (2007)
  • Author(s): T. Kudo, T. Inoue, T. Kita and O. Wada
  • Organizer: Proc. 19th International Conference on Indium Phosphide and Related Materials, pp. 303-306
  • Place of Presentation: Matsue
• [Presentation] Polarization Insensitive Optical Gain of Columnar Quantum Dots (2006)
  • Author(s): T. Kita, N. Tamnura, O. Wada, M. Sugawara, Y. Nakata, H. Ebe, and Y. Arakawa
  • Organizer: 4th International Conference on Semiconductor Quantum Dots 2006
  • Place of Presentation: Chamonix
• [Book] 2009化合物半導体技術大全 (2009)
  • Author(s): 和田 修
  • Total Pages: 324
  • Publisher: 電子ジャーナル
• [Book] Chapter 2, "Femtosecond All-Optical Devices for Ultrafast Communication and Signal Processing," in Chi H. Lee ed., "Microwave Photonics" (2007)
  • Author(s): O. Wada
  • Publisher: CRC Press (Boca Raton, FL)
• [Book] Chi H. Lee ed., "Microwave Photonics,"第2章"Femtosecond A.ll-Optical Devices for Ultrafast Communication and Signal Processing," pp. 31.76 (2007)
  • Author(s): Osamu Wada
  • Total Pages: 422
  • Publisher: CRC Press(Boca Raton, FL, U.S.A.)
• [Remarks]
  • URL: http://www.research.kobe-u.ac.jp/eng-photonics/activity_files/NovelMaterials_QD.htm
• [Remarks]
  • URL: http://www.research.kobe-u.ac.jp/eng-photonics/activity_files/NovelMaterials_QD.htm
• [Patent(Industrial Property Rights)] 量子ドットの形成方法及び半導体装置の製造方法 (2008)
  • Inventor(s): 喜多隆、木戸聖、笹山憲吾、和田修、安岡奈美
  • Industrial Property Rights Holder: 富士通株式会社
  • Industrial Property Number: 2008-200251
  • Filing Date: 2008-08-01