High-Efficiency Nitride-based Power Devices in the Next Generation

• Project/Area Number: 18206036
• Research Category: Grant-in-Aid for Scientific Research (A)
• Allocation Type: Single-year Grants
• Section: 一般
• Research Field: Electronic materials/Electric materials
• Research Institution: Meijo University
• Principal Investigator: AMANO Hiroshi Meijo University, Department of Materials Science and Engineering, Professor (60202694)
• Co-Investigator(Kenkyū-buntansha): IWAYA Motoaki Meijo University, Department of Materials Science and Engineering, Associate Professor (40367735)
• Project Period (FY): 2006 – 2007
• Project Status: Completed (Fiscal Year 2007)
• Budget Amount: ¥41,080,000 (Direct Cost: ¥31,600,000、Indirect Cost: ¥9,480,000); Fiscal Year 2007: ¥16,120,000 (Direct Cost: ¥12,400,000、Indirect Cost: ¥3,720,000); Fiscal Year 2006: ¥24,960,000 (Direct Cost: ¥19,200,000、Indirect Cost: ¥5,760,000)
• Keywords: p-GaN gate / Normally off FET / group III nitride / High power switching / High breakdown voltage / Junction hetero FET / GaN / AIN / SiC / FET / エンハンスメントモード / オン抵抗 / オフ電流

Research Abstract

Objective of this program is to prove that the group III nitride is one of the most suitable materials for the fabrication of high power FET in the next generation. In FY2006, 1. Reduction of on resistance and improvement of the mutual conductance by surface passivation, 2. Small sub-threshold swing and low power loss in inverter circuit, 3. Controllability of the threshold voltage by changing barrier composition and thickness, and 4. Difference of the mobility underneath the gate-source and the gate were clarified. In order to realize high power devices, AN substrate is very promising because of the small lattice mismatch and the extremely high resistance. Therefore, in this program, 5. Growth of AIN substrate by sublimation on the 6H-SiC substrate, and 6. Growth of high quality AIN template on a sapphire substrate by high temperature MOVPE was conducted. Several papers were published for this issue.
In FY2007, relationship between thickness of SiN passivation film and the maximum drain current was found. By optimizing the SIN thickness to be 5 nm, the following performance can be successfully observed in the normally off JHFET; Maximum drain current density: 1.58×10^<-1> [A/mm], leakage current: 1.45×10^<-8> [A/mm], on/off ratio: higher than 7 orders of magnitude, sub-threshold swing: 90 [mV/dec.], on resistance: 3.4 [mΩcm^2]. In addition, breakdown voltage was as high as 325 V, which is sufficient for inverter circuits for small size air conditioner.

Research Products

• [Journal Article] Impact of high-temperature growth by metal-organic vapor phase epitaxy on microstructure of A1N on 6H-SiC substrates (2008)
  • Author(s): M.Imura, H.Sugimura, N.Okada, M.Iwaya, S.Kamiyama, H.Amano, I.Akasaki, A.Bandoh
  • Journal Title: Journal of Crystal Growth 310 Pages: 2308-2313
  • Description: 「研究成果報告書概要(和文)」より
  • Peer Reviewed
• [Journal Article] Impact of high-temperature growth by metal-organic vapor phase epitaxy on microstructure of AlN on 6H-SiC substrates (2008)
  • Author(s): M. Imura, H. Sugimura, N. Okada, M. Iwaya, S. Kamiyama, H. Amano, I. Akasaki, A. Bandoh
  • Journal Title: Journal of Crystal Growth 310 Pages: 2308-2313
  • Description: 「研究成果報告書概要(欧文)」より
• [Journal Article] Control of threshold voltage of enhancement-mode Al_xGa_<1-x>N/GaN junction heterostructure field-effect transistors using p-GaN gate contact (2007)
  • Author(s): T.Fujii, N.Tsuyukuchi, Y.Hirose, M.Iwaya, S.Kamiyama, H.Amano and I.Akasaki
  • Journal Title: Japanese Journal of Applied Physics 46 Pages: 115-118
  • NAID: 10018704414
  • Description: 「研究成果報告書概要(和文)」より
• [Journal Article] Fabrication of enhancement-mode Al_xGa_<1-x>N/GaN junction heterostructure field-effect transistors with p-type GaN gate contact (2007)
  • Author(s): T.Fujii, N.Tsuyukuchi, Y.Hirose, M.Iwaya, S.Kamiyama, H.Amano, and I.Akasaki
  • Journal Title: phys.stat.sol. (c)4 Pages: 2708-2711
  • Description: 「研究成果報告書概要(和文)」より
  • Peer Reviewed
• [Journal Article] Annihilation mechanism of threading dislocations in AIN grown by growth form modification method using V/III ratio (2007)
  • Author(s): M.Imura, N.Fujimoto, N.Okada, K.Balakrishnan, M.Iwaya, S.Kamiyama, H.Amano, I.Akasaki, T.Noro, T.Takagi, A.Bandoh
  • Journal Title: Journal of Crystal Growth 300 Pages: 136-140
  • Description: 「研究成果報告書概要(和文)」より
  • Peer Reviewed
• [Journal Article] Epitaxial lateral overgrowth of AIN on trench-patterned AIN layers (2007)
  • Author(s): M.Imura, K.Nakano, G.Narita, N.Fujimoto, N.Okada, K.Balakrishnan, M.Iwaya, S.Kamiyama, H.Amano, I.Akasaki, T.Noro, T.Takagi, A.Bandoh
  • Journal Title: Journal of Crystal Growth 298 Pages: 257-260
  • Description: 「研究成果報告書概要(和文)」より
  • Peer Reviewed
• [Journal Article] Control of threshold voltage of enhancement-mode Al_XGa_(1-X) N/GaN junction heterostructure field-effect transistors using p-GaN gate contact (2007)
  • Author(s): T. Fujii, N. Tsuyukuchi, Y. Hirose, M. Iwaya, S. Kamiyama, H. Amano, I. Akasaki
  • Journal Title: Japanese Journal of Applied Physics 46 Pages: 115-118
  • NAID: 10018704414
  • Description: 「研究成果報告書概要(欧文)」より
• [Journal Article] Fabrication of enhancement-mode Al_XGa_(1-X) N/GaN junction heterostructure field-effect transistors with p-type GaN gate contact (2007)
  • Author(s): T. Fujii, N. Tsuyukuchi, Y. Hirose, M. Iwaya, S. Kamiyama, H. Amano, I. Akasaki
  • Journal Title: phys. stat. sol. (c)4 Pages: 2708-2711
  • Description: 「研究成果報告書概要(欧文)」より
• [Journal Article] Annihilation mechanism of threading dislocations in AlN grown by growth form modification method using V/III ratio (2007)
  • Author(s): M. Imura, N. Fujimoto, N. Okada, K. Balakrishnan, M. Iwaya, S. Kamiyama, H. Amano, I. Akasaki, T. Noro, T. Takagi, A. Bandoh
  • Journal Title: Journal of Crystal Growth 300 Pages: 136-140
  • Description: 「研究成果報告書概要(欧文)」より
• [Journal Article] Epitaxial lateral overgrowth of A1N on trench-patterned AlN layers (2007)
  • Author(s): M. Imura, K. Nakano, G. Narita, N. Fujimoto, N. Okada,. K. Balakrishnan, M. Iwaya, S. Kamiyama, H. Amano, I. Akasaki, T. Noro T. Takagi, A. Bandoh
  • Journal Title: Journal of Crystal Growth 298 Pages: 257-260
  • Description: 「研究成果報告書概要(欧文)」より
• [Journal Article] Fabrication of enhancement-mode A1_xGa_<1-x>N/GaN junction heterostructure field-effecttransistors with p-type GaN gate contact (2007)
  • Author(s): T. Fujii, N. Tsuyukuchi, Y. Hirose, M. Iwaya, S. Kamiyama, H. Amano, and I. Akasaki
  • Journal Title: phys. stat. sol. (c)4 Pages: 2708-2711
  • Peer Reviewed
• [Journal Article] Annihilation mechanism of threading dislocations in AIN grown by growth form modification method using V/III ratio (2007)
  • Author(s): M. Imura, N. Fujimoto, N. Okada, K. Balakrishnan, M. Iwaya, S. Kamiyama, H. Amano, I. Akasaki, T. Noro, T. Takagi, A. Bandoh
  • Journal Title: Journal of Crystal Growth 300 Pages: 136-140
  • Peer Reviewed
• [Journal Article] Epitaxial lateral overgrowth of AlN on trench-patterned AlN layers (2007)
  • Author(s): M. Imura, K. Nakano, G. Narita, N. Fujimoto, N. Okada, . K. Balakrishnan, M. Iwaya, S. Kamiyama, H. Amano, I. Akasaki, T. Noro, T. Takagi, A. Bandoh
  • Journal Title: Journal of Crystal Growth 298 Pages: 257-260
  • Peer Reviewed
• [Journal Article] Control of threshold voltage of enhancement-mode Al_xGa_1-xN/GaN junction heterostructure field-effect transistors using p-GaN gate contact (2007)
  • Author(s): T.Fujii, N.Tsuyukuchi, Y.Hirose, M.Iwaya, S.Kamiyama, H.Amano, I.Akasaki
  • Journal Title: Japanese Journal of Applied Physics 46 Pages: 115-118
  • NAID: 10018704414
• [Journal Article] Low-leakage-current enhancement-mode AIGaN/GaN heterostructure field-effect transistor using p-type gate contact (2006)
  • Author(s): N.Tsuyukuchi, K.Nagamatsu, Y.Hirose, M.Iwaya, S.Kamiyama, H.Amano and I.Akasaki
  • Journal Title: Japanese Journal of Applied Physics 45
  • Description: 「研究成果報告書概要(和文)」より
• [Journal Article] Influence of Ohmic Contact Resistance on Transconductance in AlGaN/GaN HEMT (2006)
  • Author(s): Y.Hirose, A.Honshio, T.Kawashima, M.Iwaya, S.Kamiyama, M.Tsuda, H.Amano and I.Akasaki
  • Journal Title: IEICE Trans.Electron. E89-C Pages: 1064-1067
  • NAID: 110007538789
  • Description: 「研究成果報告書概要(和文)」より
• [Journal Article] High On/Off Ratio in Enhancement-Mode Al_xGa_<1-x>N/GaN Junction Heterostructure Field-Effect Transistors with P-type GaN Gate Contact (2006)
  • Author(s): T.Fujii, N.Tsuyukuchi, M.Iwaya, S.Kamiyama, H.Amano and I.Akasaki
  • Journal Title: Japanese Journal of Applied Physics 45
  • NAID: 10018340710
  • Description: 「研究成果報告書概要(和文)」より
• [Journal Article] High-Temperature Metal-Organic Vapor Phase Epitaxial Growth of AIN on Sapphire by Multi Transition Growth Mode Method Varying V/III Ratio (2006)
  • Author(s): M.Imura, K.Nakano, N.Fujimoto, N.Okada, K.Balakrishnan, M.Iwaya, S.Kamiyama, H.Amano, I.Akasaki, T.Noro, T.Takagi, A.Bandoh
  • Journal Title: Japanese Journal of Applied Physics 45 Pages: 8639-8643
  • Description: 「研究成果報告書概要(和文)」より
  • Peer Reviewed
• [Journal Article] Low-leakage-current enhancement-mode AlGaN/GaN heterostructure field-effect transistor using p-type gate contact (2006)
  • Author(s): N. Tsuyukuchi, K. Nagamatsu, Y. Hirose, M. Iwaya, S. Kamiyama, H. Amano, I. Akasaki
  • Journal Title: Japanese Journal of Applied Physics 45
  • NAID: 10018158654
  • Description: 「研究成果報告書概要(欧文)」より
• [Journal Article] Influence of Ohmic Contact Resistance on Transconductance in AlGaN/GaN HEMT (2006)
  • Author(s): Yoshikazu Hirose, Akira Honshio, Takeshi Kawashima, Motoaki Iwaya, Satoshi Kamiyama, Michinobu Tsuda, Hiroshi Amano, Isamu Akasaki
  • Journal Title: IEICE Trans. Electron. E89-C Pages: 1064-1067
  • NAID: 110007538789
  • Description: 「研究成果報告書概要(欧文)」より
• [Journal Article] High On/Off Ratio in Enhancement-Mode Al_XGa_(1-X) N/GaN Junction Heterostructure Field-Effect Transistors with P-type GaN Gate Contact (2006)
  • Author(s): T. Fujii. N. Tsuyukuchi, M. Iwava. S. Kamivama. H. Amano, I. Akasaki
  • Journal Title: Japanese Journal of Applied Physics 45
  • NAID: 10018340710
  • Description: 「研究成果報告書概要(欧文)」より
• [Journal Article] High-Temperature Metal-Organic Vapor Phase Epitaxial Growth of AlN on Sapphire by Multi Transition Growth Mode Method Varying V/III Ratio (2006)
  • Author(s): M. Imura, K. Nakano, N. Fujimoto, N. Okada, K. Balakrishnan, M. Iwaya, S. Kamiyama, H. Amano, I. Akasaki, T. Noro, T. Takagi, A. Bandoh
  • Journal Title: Japanese Journal of Applied Physics 45 Pages: 8639-8643
  • Description: 「研究成果報告書概要(欧文)」より
• [Journal Article] Low-leakage-current enhancement-mode AlGaN/GaN heterostructure field-effect transistor using p-type gate contact (2006)
  • Author(s): N.Tsuyukuchi, K.Nagamatsu, Y.Hirose, M.Iwaya, S.Kamiyama, H.Amano, I.Akasaki
  • Journal Title: Japanese Journal of Applied Physics 45
  • NAID: 10018158654
• [Journal Article] Influence of Ohmic Contact Resistance on Transconductance in AlGaN/GaN HEMT (2006)
  • Author(s): Yoshikazu Hirose, Akira Honshio, takeshi Kawashima, Motoaki Iwaya, Satoshi Kamiyama, Michinobu Tsuda, Hiroshi Amano, Isamu Akasaki
  • Journal Title: IEICE Trans. Electron. E89-C Pages: 64-1067
  • NAID: 110007538789
• [Journal Article] High On/Off Ratio in Enhancement-Mode Al_xGa_1-xN/GaN Junction Heterostructure Field-Effect Transistors with P-type GaN Gate Contact (2006)
  • Author(s): T.Fujii, N.tsuyukuchi, M.Iwaya, S.Kamiyama, H.Amano, I.Akasaki
  • Journal Title: Japanese Journal of Applied Physics 45
  • NAID: 10018340710
• [Presentation] p型GaNゲートを用いたnormally-off型AlGaN/GaN HFETsの構造最適化 (2007)
  • Author(s): 水野 克俊、藤井 隆弘、中村 彰吾、根賀 亮平、岩谷 素顕、上山 智、天野 浩、赤崎 勇
  • Organizer: 第68回応用物理学会学術講演会
  • Place of Presentation: 北海道工業大学
  • Year and Date: 2007-09-04
  • Description: 「研究成果報告書概要(和文)」より
• [Presentation] Technical issues for the realization of new functional nitride-based optical and electron devices (2007)
  • Author(s): H. Amano
  • Organizer: No. 68 Japan Society for Applied Physics Annual Meeting
  • Year and Date: 2007-09-04
  • Description: 「研究成果報告書概要(欧文)」より
• [Presentation] p型GaNゲートを用いたnormally-off型A1GaN/GaN HFETsの構造最適化 (2007)
  • Author(s): 水野克俊、藤井隆弘、中村彰吾、根賀亮平、岩谷素顕、上山智、天野浩、赤崎勇
  • Organizer: 第68回応用物理学会学術講演会
  • Place of Presentation: 北海道工業大学
  • Year and Date: 2007-09-04
• [Presentation] 窒化物系半導体の最近の動向と課題 (2007)
  • Author(s): 天野 浩
  • Organizer: 日本学術振興会 結晶加工と評価技術第45委員会 110回研究会
  • Place of Presentation: 四ツ谷、東京
  • Year and Date: 2007-06-04
  • Description: 「研究成果報告書概要(和文)」より
• [Presentation] <デバイスの立場から>窒化物半導体光・電子デバイス極限機能創出のための結晶成長の技術課題 (2007)
  • Author(s): 天野 浩
  • Organizer: 日本結晶成長学会特別講演会・日本学術振興会第161委員会第54回研究会
  • Place of Presentation: 千駄ケ谷、東京
  • Year and Date: 2007-04-13
  • Description: 「研究成果報告書概要(和文)」より
• [Presentation] <デバイスの立場から> 窒化物半導体光・電子デバイス極限機能創出のための結晶成長の技術課題 (2007)
  • Author(s): 天野 浩
  • Organizer: 日本結晶成長学会特別講演会・日本学術振興会第161委員会第54回研究会
  • Place of Presentation: 千駄ヶ谷、東京
  • Year and Date: 2007-04-13
• [Presentation] High drain current and low loss normally-off-mode AIGaN/GaN junction HFETs with p-type GaN gate contact (2007)
  • Author(s): T. Fujii, S. Nakamura, K. Mizuno, R. Nega, M. Iwaya, S. Kamiyama, H. Amano and I. Akasaki
  • Organizer: Group 45 Japan Society for Promotion of Science No. 110 Meeting
  • Year and Date: 2007-04-06
  • Description: 「研究成果報告書概要(欧文)」より
• [Presentation] p型GaNゲートを用いた高出力低損失normally-off型AlGaN/GaNHFETs (2007)
  • Author(s): 藤井 隆弘、露口 士夫、岩谷 素顕、上山 智、天野 浩、赤崎 勇
  • Organizer: 春季第54回応用物理学会関係連合講演会
  • Place of Presentation: 青山学院大学
  • Year and Date: 2007-03-28
  • Description: 「研究成果報告書概要(和文)」より
• [Presentation] p型GaNゲートを用いた低オン抵抗ノーマリーオフ型AlGaN/GaN Junction HFETs (2007)
  • Author(s): 根賀 亮平、藤井 隆弘、中村 彰吾、露口 士夫、川島 毅士、岩谷 素顕、上山 智、天野 浩、赤崎 勇
  • Organizer: 春季第54回応用物理学会関係連合講演会
  • Place of Presentation: 青山学院大学
  • Year and Date: 2007-03-28
  • Description: 「研究成果報告書概要(和文)」より
• [Presentation] S. Nakamura, R. Nega, M. Iwaya, S. Kamiyama, H. Arnano, I. Akasaki, Optimization of normally off type AIGaN/GaN JHFETs having p-GaN gate (2007)
  • Author(s): K. Mizuno, T. Fujii
  • Organizer: THE 56th JAPAN NATIONAL CONGRESS ON THEORETICAL AND APPLIED MECHANICS
  • Place of Presentation: Tokyo, Japan
  • Year and Date: 2007-03-09
  • Description: 「研究成果報告書概要(欧文)」より
• [Presentation] High drain current and low loss normally-off-mode AlGaN/GaN junction HFETs with p-type GaN gate contact (2007)
  • Author(s): T.Fujii, S.Nakamura, K.Mizuno, R.Nega, M.Iwaya, S.Kamiyama, H.Amano and I.Akasaki
  • Organizer: The 7th International Conference on Nitride Semiconductors(ICNS-7)
  • Place of Presentation: Las Vegas,U.S.A
  • Description: 「研究成果報告書概要(和文)」より
• [Presentation] High drain current and low loss normally-off-mode AlGaN/GaN junction HFETs with p-type GaN gate contact (2007)
  • Author(s): T. Fujii, S. Nakamura, K. Mizuno, R. Nega, M. Iwaya, S. Kamiyama, H. Amano and I. Akasaki
  • Organizer: The 7th International Conference on Nitride Semiconductors(ICNS-7)
  • Place of Presentation: Las Vegas, U. S. A
• [Presentation] Recent development of nitride semiconductors (2006)
  • Author(s): H. Amano
  • Organizer: THE 55th JAPAN NATIONAL CONGRESS ON THEORETICAL AND APPLIED MECHANICS
  • Place of Presentation: Las Vegas, USA
  • Year and Date: 2006-01-24
  • Description: 「研究成果報告書概要(欧文)」より
• [Book] Wide Bandgap Semiconductors 2.3.1 Doping Technology, pp.77-79, 3.5.3 Advances in UV Laser Diodes, pp.206-207, Total 460 pages, Editors Kiyoshi Takahashi, Akihiko Yoshikawa, Adarsh Sandhu (2007)
  • Author(s): Hiroshi Amano
  • Total Pages: 460
  • Publisher: Springer
  • Description: 「研究成果報告書概要(和文)」より
• [Book] Wide Bandgap Semiconductors 2. 3. 1 Doping Technology, pp. 77-79, 3. 5. 3 Advances in UV Laser Diodes, pp. 206-207, Total 460 pages, Editors Kiyoshi Takahashi, Akihiko Yoshikawa, Adarsh Sandhu (2007)
  • Author(s): Hiroshi Amano
  • Total Pages: 460
  • Publisher: Springer
• [Book] 高周波半導体材料・デバイスの新展開、監修:佐野芳明、奥村次徳、第2章 III族窒化物半導体のMOVPE技術、pp.80-86 (2006)
  • Author(s): 天野 浩
  • Publisher: シーエムシー出版
  • Description: 「研究成果報告書概要(和文)」より
• [Book] 高周波半導体材料・デバイスの新展開、監修 : 佐野芳明、奥村次徳、第2章 III族窒化物半導体のMOVPE技術、pp.80-86 (2006)
  • Author(s): 天野 浩
  • Total Pages: 266
  • Publisher: シーエムシー出版
• [Patent(Industrial Property Rights)] 窒化物系半導体の気相成長方法、及び、エピタキシャル基板とそれを用いた半導体装置 (2006)
  • Inventor(s): 津田 道信, 岩谷 素顕, 上山 智, 天野 浩, 赤崎 勇
  • Industrial Property Rights Holder: 京セラ株式会社、学校法人名城大学
  • Filing Date: 2006-03-10
  • Description: 「研究成果報告書概要(和文)」より
• [Patent(Industrial Property Rights)] 窒化物系半導体の気相成長方法とそれを用いた窒化物系半導体エピタキシャル基板並びに自立基板、及び半導体装置 (2006)
  • Inventor(s): 津田 道信, 岩谷 素顕, 上山 智, 天野 浩, 赤崎 勇
  • Industrial Property Rights Holder: 京セラ株式会社、学校法人名城大学
  • Filing Date: 2006-02-24
  • Description: 「研究成果報告書概要(和文)」より