Clarifying the Photonic, Electronic, and Acoustic Characteristics of Quantum-sized Silicon for Functional Integration

• Project/Area Number: 18206039
• Research Category: Grant-in-Aid for Scientific Research (A)
• Allocation Type: Single-year Grants
• Section: 一般
• Research Field: Electron device/Electronic equipment
• Research Institution: Tokyo University of Agriculture and Technology
• Principal Investigator: KOSHIDA Nobuyoshi Tokyo University of Agriculture and Technology, Institute of Symbiotic Science and Technology, Professor (50143631)
• Co-Investigator(Kenkyū-buntansha): BERNARD Gelloz National University Corporation Tokyo University of Agriculture and Technology, Graduate School, Institute of Symbiotic Science and Technology, Research Associate (40343157)
• Project Period (FY): 2006 – 2007
• Project Status: Completed (Fiscal Year 2007)
• Budget Amount: ¥48,880,000 (Direct Cost: ¥37,600,000、Indirect Cost: ¥11,280,000); Fiscal Year 2007: ¥19,240,000 (Direct Cost: ¥14,800,000、Indirect Cost: ¥4,440,000); Fiscal Year 2006: ¥29,640,000 (Direct Cost: ¥22,800,000、Indirect Cost: ¥6,840,000)
• Keywords: Nanosilicon / Quantum confinement / Silicon photonics / Electroluminescence / Ballistic electron emission / Hydrogen generation / Ultrasound emitter / Functional integration / 可視発光 / 負イオン生成

Research Abstract

Photonic, electronic, and acoustic properties of quantum-sized silicon have been studied for their characterizations and device applications toward the functional integration. The results and significances are summarized as follows.
(1) Development of photonic devices based on enhanced luminescence
- It was confirmed by combination of anneal with surface passivation that both the efficiency and the stability were much improved, and then the evidence of energy transfer in nanosilicon was clearly detected by analyses of photoexcitation-relaxation process.
- Process technologies for stable blue luminescence, optical cavity, photoconduction, nanowire, and 3-dimensional periodic nanostructure were developed as components of silicon photonics.
(2) Applications of ballistic electron emitter
- The usefulness of nanosilicon ballistic electron emitter as means of negative ion source and hydrogen gas generation was shown by operation in air and in pure water, respectively.
- The applicability in vacuum was also demonstrated by the use as planar cold cathode for parallel electron-beam lithography and ultra-high-sensitivity image sensing.
(3) Improved ultrasonic emission and device applications
- The appropriate design and driving techniques compatible with efficient and stable ultrasonic emission from nanosilicon device were developed on a basis of systematic analyses.
- Due to the flat frequency response, the nanosilicon emitter was successfully applied to sound source for studies on bio-acoustic communication and digital information transmission.
(4) Implementation of functional integration
- The device concept and process flow were given for monolithic integration of photonic, electronic, and acoustic functions into silicon substrate.
- Actuality of this approach was demonstrated by prototyping two devices : sound-emissive electroluminescent diode and surface-emitting device with ballistic excitation mechanism.

Research Products

• [Journal Article] Characteristics of nanosilicon ballistic cold cathode in liquids as an active electrode. (2008)
  • Author(s): T. Ohta, B. Gelloz, and N Koshida
  • Journal Title: J. Vac. Sci. Technol. B 26 Pages: 716-719
  • Description: 「研究成果報告書概要(和文)」より
  • Peer Reviewed
• [Journal Article] Development of a super-high sensitive image sensor using 640×480 pixel active-matrix high-efficency electrion emission device. (2008)
  • Author(s): N. Negishi, T. Sato, Y. Matsuba, R. Tanaka, T. Nakada, K. Sakemura, Y. Okuda, A. Watanabe, T. Yoshikawa, K. Ogasawara, M. Nanba, S. Okazaki, K. Tanioka. N. Egami, and N. Koshida
  • Journal Title: J. Vac. Sci. Technol. B 26 Pages: 711-715
  • Description: 「研究成果報告書概要(和文)」より
  • Peer Reviewed
• [Journal Article] Cavity effect in nanocrystalline porous silicon ballistic lighting device. (2008)
  • Author(s): B. Gelloz, M. Sato and N. Koshida
  • Journal Title: Jpn. J. Appl. Phys. 47 Pages: 2902-2905
  • NAID: 10022548317
  • Description: 「研究成果報告書概要(和文)」より
  • Peer Reviewed
• [Journal Article] Acoustic wave manipulation by phased operation of two-dimensionally arrayed nanocrystalline silicon ultrasonic emitters. (2008)
  • Author(s): B. Gelloz, M. Sugawara and N. Koshida
  • Journal Title: Jpn. J. Appl. Phys. 47 Pages: 3123-3126
  • NAID: 10022551893
  • Description: 「研究成果報告書概要(和文)」より
  • Peer Reviewed
• [Journal Article] Improved photoconduction effects of nanometer-sized Si dot multilayers. (2008)
  • Author(s): Y. Hirano, S. Yamazaki, and N, Koshida
  • Journal Title: Jpn. J. Appl. Phys. 47 Pages: 3095-3098
  • NAID: 10022551826
  • Description: 「研究成果報告書概要(和文)」より
  • Peer Reviewed
• [Journal Article] 溶液中でも動作する電子源電極の開発と水素発生 (2008)
  • Author(s): 越田信義, 太田敢行, Bernard Gelloz
  • Journal Title: 燃料電池 7 Pages: 88-92
  • NAID: 40015853214
  • Description: 「研究成果報告書概要(和文)」より
  • Peer Reviewed
• [Journal Article] Characteristics of nanosilicon ballistic cold cathode in liquids as an active electrode (2008)
  • Author(s): T., Ohta., B., Gelloz, N, Koshida
  • Journal Title: J. Vac. Sci. Technol B 26 Pages: 716-719
  • Description: 「研究成果報告書概要(欧文)」より
• [Journal Article] Development of a super-high sensitive image sensor using 640×480 pixel active-matrix high-efficency electrion emission device (2008)
  • Author(s): N., Negishi, T., Sato, Y., Matsuba, R., Tanaka, T., Nakada, K., Sakemura, Y., Okuda, A., Watanabe, T., Yoshikawa, K., Ogasawara, M., Nanba, S., Okazaki, K., Tanioka, N., Egami, N., Koshida
  • Journal Title: J. Vac. Sci. Technol B. 26 Pages: 711-715
  • Description: 「研究成果報告書概要(欧文)」より
• [Journal Article] Cavity Effect in Nanocrystalline Porous Silicon Ballistic Lighting Device (2008)
  • Author(s): B., Gelloz, M., Sato, N., Koshida
  • Journal Title: Jpn. J. Appl. Phys 47 Pages: 2902-2905
  • NAID: 10022548317
  • Description: 「研究成果報告書概要(欧文)」より
• [Journal Article] Improved Photoconduction Effects of Nanometer-Sized Si Dot Multilayers (2008)
  • Author(s): Y., Hirano, S., Yamazaki, N, i Koshida
  • Journal Title: Jpn. J. Appl. Phys 47 Pages: 3095-3098
  • NAID: 10022551826
  • Description: 「研究成果報告書概要(欧文)」より
• [Journal Article] Acoustic Wave Manipulation by Phased Operation of Two-Dimensionally Arrayed Nanocrystalline Silicon Ultrasonic Emitters (2008)
  • Author(s): B., Gelloz, M., Sugawara, N., Koshida
  • Journal Title: Jpn. J. Appl. Phys 47 Pages: 3123-3126
  • NAID: 10022551893
  • Description: 「研究成果報告書概要(欧文)」より
• [Journal Article] Development of Electron-bmitung Electrode Compatible with Operation in Solutions Leading to Hydrogen Generation (in Japanese) (2008)
  • Author(s): N., Koshida, T., Ohta, B., Gelloz
  • Journal Title: The J. Fuel Cell Technol 7 Pages: 88-92
  • Description: 「研究成果報告書概要(欧文)」より
• [Journal Article] Development of a super-high sensitive image sensor using 640x480 pixelactive-matrix high-efficency electrion emission device. (2008)
  • Author(s): N. Negishi, T. Sato, Y. Matsuba, R. Tanaka, T. Nakada, K. Sakemura, Y. Okuda, A. Watanabe, T. Yoshikawa, K. Ogasawara, M. Nanba, S. Okazaki, K. Tanioka, N. Egami, and N. Koshida
  • Journal Title: J. Vac. Sci. Technol. B 26 Pages: 711-715
  • Peer Reviewed
• [Journal Article] 溶液中でも動作する電子源電極の開発と水素発生. (2008)
  • Author(s): 越田信義、太田敢行、Bernard Gelloz
  • Journal Title: 燃料電池 7 Pages: 88-92
  • NAID: 40015853214
  • Peer Reviewed
• [Journal Article] Energy transfer in porous-silicon/laser-dye composite evidenced by polarization memory of photoluminescence. (2007)
  • Author(s): A. Chouket, H. Elhouichet, M. Oueslati, H. Koyama, B. Gelloz, and N. Koshida
  • Journal Title: Appl. Phys. Lett. 91
  • Description: 「研究成果報告書概要(和文)」より
  • Peer Reviewed
• [Journal Article] Operation of nanosilicon ballistic electron emitter in liquid water and hydrogen generation effect. (2007)
  • Author(s): N. Koshida, T. Ohta, and B. Gelloz
  • Journal Title: Appl. Phys. Lett. 90
  • Description: 「研究成果報告書概要(和文)」より
  • Peer Reviewed
• [Journal Article] Maternal approaches to pup ultrasonic vocalizations produced by a nanocrystalline silicon thermo-acoustic emitter. (2007)
  • Author(s): A. Uematsu, T. Kikusui, T. Kihara, T. Harada, M. Kato, K. Nakano, O. Murakami, N. Koshida, Y. Takeuchi, and Y. Mori
  • Journal Title: Brain Research 1163 Pages: 91-99
  • Description: 「研究成果報告書概要(和文)」より
  • Peer Reviewed
• [Journal Article] Development of a high-resolution active-matrix electron emitter array for application to high-sensitivity image sensing. (2007)
  • Author(s): N. Negishi, Y. Matsuba, R. Tanaka, T. Nakada, K. Sakemura, Y. Okuda, A. Watanabe, T. Yoshikawa, K. Ogasawara, M. Nanba, S. Okazaki, K. Tanioka, N. Egami, and N. Koshida
  • Journal Title: J. Vac. Sci. Technol. B 25 Pages: 661-666
  • Description: 「研究成果報告書概要(和文)」より
  • Peer Reviewed
• [Journal Article] Emission characteristics of nanocrystalline porous silicon ballistic cold cathode in atmospheric ambience. (2007)
  • Author(s): T. Ohta, A. Kojima, and N. Koshida
  • Journal Title: J. Vac. Sci. Technol. B 25 Pages: 524-527
  • Description: 「研究成果報告書概要(和文)」より
  • Peer Reviewed
• [Journal Article] Highly efficient and stable photoluminescence of nanocrystalline porous silicon by combination of chemical modification and oxidation under high pressure. (2007)
  • Author(s): B. Gelloz and N. Koshida
  • Journal Title: Jpn. J. Appl. Phys. 46 Pages: 3462-3465
  • Description: 「研究成果報告書概要(和文)」より
  • Peer Reviewed
• [Journal Article] Stabilization of nano-crystalline porous silicon electroluminescence by high pressure water vapor annealing. (2007)
  • Author(s): B. Gelloz, T. Shibata and N. Koshida
  • Journal Title: physica status solidi(a) 204 Pages: 2141-2144
  • Description: 「研究成果報告書概要(和文)」より
  • Peer Reviewed
• [Journal Article] Synthesis and photoluminescence properties of silicon nanowires treated by high-pressure water vapor annealing. (2007)
  • Author(s): B. Salhi, B. Gelloz, N. Koshida, and R. Boukherroub
  • Journal Title: physica status solidi(a) 204 Pages: 1302-1306
  • Description: 「研究成果報告書概要(和文)」より
  • Peer Reviewed
• [Journal Article] 1インチ256×192画素アクティブ駆動型HEED冷陰極HARP撮像板 (2007)
  • Author(s): 難波正和、宮川和典、渡部俊久、岡崎三郎、谷岡健吉、江上典文、田中亮太、中田智成、酒村一到、奥田義行、根岸伸安、渡辺温、吉川高正、小笠原清秀、小林昭、小楠功一、越田信義
  • Journal Title: 映像情報メディア学会誌 61 Pages: 387-392
  • NAID: 110006854561
  • Description: 「研究成果報告書概要(和文)」より
  • Peer Reviewed
• [Journal Article] Effect of bi-layer structure on the long-term stability of nanocrystalline porous silicon ultrasonic emitter. (2007)
  • Author(s): Y. Watabe, Y. Honda, and N. Koshida
  • Journal Title: Jpn. J. Appl. Phys. 46 Pages: 6218-6221
  • Description: 「研究成果報告書概要(和文)」より
  • Peer Reviewed
• [Journal Article] Effects of thermal effusivity in nanocrystalline porous silicon on long-term operation of thermally induced ultrasonic emission. (2007)
  • Author(s): Y. Watabe, Y. Honda, and N. Koshida
  • Journal Title: Jpn. J. Appl. Phys. 46 Pages: 3645-3647
  • NAID: 10022546529
  • Description: 「研究成果報告書概要(和文)」より
  • Peer Reviewed
• [Journal Article] New design principle and fabrication process of silicon 3-dimensional photonic crystal structures. (2007)
  • Author(s): D. Hippo, K. Urakawa, Y. Kawata, Y. Tsuchiya, H. Mizuta, N. Koshida, and S. Oda
  • Journal Title: Jpn. J. Appl. Phys. 46 Pages: 633-637
  • Description: 「研究成果報告書概要(和文)」より
  • Peer Reviewed
• [Journal Article] Low Voltage and High Speed Operation of 640X480 Pixel Ac-tive-matrix HEED(High-efficiency Electron Emission Device)Array for HARP Image Sensor. (2007)
  • Author(s): Y. Okuda, T. Sato, Y. Matsuba, R. Tanaka, T. Nakada, K. Sakemura, N. Negishi, A. Watanabe, T. Yoshikawa, K. Ogasawara, M. Nanba, S. Okazaki, K. Tanioka, N. Egami, A. Kobayashi, and N. Koshida
  • Journal Title: Proc. Int. Display Workshop IDW07 Pages: 2165-2168
  • Description: 「研究成果報告書概要(和文)」より
  • Peer Reviewed
• [Journal Article] Development of Flexible Electrochromic Device with Thin Film Configuration. (2007)
  • Author(s): H. Yoshimura, T. Sakaguchi and N. Koshida
  • Journal Title: Jpn. J. Appl. Phys. 46 Pages: 3479-3481
  • NAID: 10022546290
  • Description: 「研究成果報告書概要(和文)」より
  • Peer Reviewed
• [Journal Article] Pronounced Photonic Effects of High-Pressure Water Vapor Annealing on Nanocrystalline Porous Silicon (2007)
  • Author(s): B. Gelloz, T. Shibata, R. Mentek, and N. Koshida
  • Journal Title: Mater. Res. Soc. Symp. Proc. 958
  • Description: 「研究成果報告書概要(和文)」より
  • Peer Reviewed
• [Journal Article] Synthesis and Optical Properties of Silicon Oxide Nanowires (2007)
  • Author(s): B. Gelloz, Y. Coffinier, B. Salhi, N. Koshida, G. Patriarche, and R. Boukherroub
  • Journal Title: Mater. Res. Soc. Symp. Proc. 958
  • Description: 「研究成果報告書概要(和文)」より
  • Peer Reviewed
• [Journal Article] Energy transfer in porous-silicon / laser-dye composite evidenced by polarization memory of photoluminescence (2007)
  • Author(s): A., Chouket, H., Elhouichet, M., Oueslati, H., Koyama, B., Gelloz, N., Koshida
  • Journal Title: Appl. Phys. Lett 91
  • Description: 「研究成果報告書概要(欧文)」より
• [Journal Article] Effect of Bi-layer Structure on the Long-Term Stability of Nanocrystalline Porous Silicon Ultrasonic Emitter (2007)
  • Author(s): Y, Watabe, Y, Honda, N, Koshida
  • Journal Title: Jpn. J. Appl. Phys 46 Pages: 6218-6221
  • Description: 「研究成果報告書概要(欧文)」より
• [Journal Article] Maternal approaches to pup ultrasonic vocalizations produced by a nanocrystalline silicon thermo-acoustic emitter. (2007)
  • Author(s): A., Uematsu, T, Kikusui, T., Kihara, T., Harada, M., Kato, K., Nakano, O., Murakami, N., Koshida, Y., Takeuchi, Y., Mori
  • Journal Title: Brain Research 1163 Pages: 91-99
  • Description: 「研究成果報告書概要(欧文)」より
• [Journal Article] Operation of nanosilicon ballistic electron emitter in liquid water and hydrogen generation effect (2007)
  • Author(s): N., Koshida, T., Ohta, B., Gelloz
  • Journal Title: Appl. Phys. Lett 90 Pages: 163505-7
  • Description: 「研究成果報告書概要(欧文)」より
• [Journal Article] 1-inch 256×192 Pixel HARP Image Sensor with Active-matrix HEED (in Japanese) (2007)
  • Author(s): M., Namba, K., Miyakawa, T., Watabe, S., Okabe, K., Tanioka, N., Egami, R., Tanaka, T., Nakada, K., Sakemura, Y., Okuda, N., Negishi, A., Watanabe, T., Yoshikawa, K., Ogasawara, A., Kobayashi, K., Ogusu, N., Koshida
  • Journal Title: J. Inst. Image and TV Eng 61 Pages: 387-392
  • Description: 「研究成果報告書概要(欧文)」より
• [Journal Article] Development of a high-resolution active-matrix electron emitter array for application to high-sensitivity image sensing (2007)
  • Author(s): N., Negishi, Y., Matsuba, R., Tanaka, T., Nakada, K., Sakemura, Y., Okuda, A., Watanabe, T., Yoshikawa, K., Ogasawara, M., Nanba, S., Okazaki, K., Tanioka, N., Egami, N., Koshida
  • Journal Title: J. Vac. Sci. Technol B 25 Pages: 661-666
  • Description: 「研究成果報告書概要(欧文)」より
• [Journal Article] Emission characteristics of nanocrystalline porous silicon ballistic cold cathode in atmospheric ambience (2007)
  • Author(s): T., Ohta, A., Kojima, N., Koshidal
  • Journal Title: J. Vac. Sci. Technol B 25 Pages: 524-527
  • Description: 「研究成果報告書概要(欧文)」より
• [Journal Article] Highly Efficient and Stable Photoluminescence of Nanocrystalline Porous Silicon by Combination of Chemical Modification and Oxidation under High Pressure (2007)
  • Author(s): B., Gelloz, N., Koshida
  • Journal Title: Jpn. J. Appl. Phys 46 Pages: 3462-3465
  • Description: 「研究成果報告書概要(欧文)」より
• [Journal Article] Development of Flexible Electrochromic Device with Thin Film Configuration (2007)
  • Author(s): H., Yoshimura, T., Sakaguchi, N., Koshida
  • Journal Title: Jpn. J. Appl. Phys 46 Pages: 3479-3481
  • NAID: 10022546290
  • Description: 「研究成果報告書概要(欧文)」より
• [Journal Article] Effects of Thermal Effusivity in Nanocrystalline Porous Silicon on Long-Term Operation of Thermally Induced Ultrasonic Emission (2007)
  • Author(s): Y., Watabe, Y., Honda, N., Koshidal
  • Journal Title: Jpn. J. Appl. Phys 46 Pages: 3645-3647
  • NAID: 10022546529
  • Description: 「研究成果報告書概要(欧文)」より
• [Journal Article] New design principle and Fabrication Process of Silicon 3-dimensional Photonic Crystal Structures (2007)
  • Author(s): D., Hippo, K., Urakawa, Y., Kawata, Y., Tsuchiya, H., Mizuta, N., Koshida, S., Oda
  • Journal Title: Jpn. J. Appl. Phys 46 Pages: 633-637
  • Description: 「研究成果報告書概要(欧文)」より
• [Journal Article] Stabilization of nano-crystalline porous silicon electroluminescence by high pressure water vapor annealing (2007)
  • Author(s): B., Gelloz, T., Shibata, N., Koshida
  • Journal Title: physica status solidi (a) Vol. 204 Pages: 2141-2144
  • Description: 「研究成果報告書概要(欧文)」より
• [Journal Article] Synthesis and photoluminescence properties of silicon nanowires treated by high-pressure water vapor annealing. (2007)
  • Author(s): B., Salhi, B., Gelloz, N., Koshida, R., Boukherroub
  • Journal Title: physica status solidi (a) Vol. 204 Pages: 1302-1306
  • Description: 「研究成果報告書概要(欧文)」より
• [Journal Article] Pronounced Photonic Effects of High-Pressure Water Vapor Annealing on Nanocrystalline Porous Silicon (2007)
  • Author(s): B., Gelloz, T., Shibata, R., Mentek, N., Koshida
  • Journal Title: Mater. Res. Soc. Symp. Proc. Vol. 958, L08 Pages: 2-7
  • Description: 「研究成果報告書概要(欧文)」より
• [Journal Article] Synthesis and Optical Properties of Silicon Oxide Nanowires (2007)
  • Author(s): Bernard, Gelloz, Yannick, Coffinier, Billel, Salhi, Nobuyoshi, Koshida, Gilles, Patriarche, Rabah, Boukherroub
  • Journal Title: Mater. Res. Soc. Symp. Proc. Vol. 958, L05 Pages: 10-15
  • Description: 「研究成果報告書概要(欧文)」より
• [Journal Article] Low Voltage and High Speed Operation of 640X480 Pixel Ac-tive-matrix HEED (High-efficiency Electron Emission Device) Array for HARP Image Sensor (2007)
  • Author(s): Y., Okuda, T., Sato, Y., Matsuba, R., Tanaka, T., Nakada, K., Sakemura, N., Negishi, A., Watanabe, T., Yoshikawa, K., Ogasawara, M., Nanba*, S., Okazaki, K., Tanioka, N., Egami, A., Kobayashi, N., Koshida
  • Journal Title: Proc. Int. Display Workshop Pages: 2165-2168
  • Description: 「研究成果報告書概要(欧文)」より
• [Journal Article] Luminescence and related properties of nanocrystalline porous silicon, in Semiconductor Quantum Structures (2007)
  • Author(s): N., Koshida
  • Journal Title: Landolt-bornstein - New Series Vol. III-34 Pages: 121-136
  • Description: 「研究成果報告書概要(欧文)」より
• [Journal Article] Maternal approaches to pup ultrasonic vocalizations produced by a nanocrystalline silicon thermo-acoustic emitter. (2007)
  • Author(s): A Uematsu, T. Kikusui, T. Kihara, T. Harada, M. Kato, K. Nakano, O. Murakami, N. Koshida, Y. Takeuchi, and Y. Mori
  • Journal Title: Brain Research 1163 Pages: 91-99
  • Peer Reviewed
• [Journal Article] Stabilization of nano-crystalline porous silicon electroluminescence by high pressure water vapor annealing. (2007)
  • Author(s): B. Gelloz, T. Shibata and N. Koshida
  • Journal Title: physica status solidi (a) 204 Pages: 2141-2144
  • Peer Reviewed
• [Journal Article] Synthesis and photoluminescence properties of silicon nanowires treated by high-pressure water vapor annealing. (2007)
  • Author(s): B. Salhi, B. Gelloz, N. Koshida, and R. Boukherroub
  • Journal Title: physica status solidi (a) 204 Pages: 1302-1306
  • Peer Reviewed
• [Journal Article] Effects of thermal effusivity in nanocrystalline porous silicon on long-term operation of thermally induced ultrasonic emission. (2007)
  • Author(s): Y. Watabe, Y. Honda and N. Koshida
  • Journal Title: Jpn. J. Appl. Phys. 46 Pages: 3645-3647
  • NAID: 10022546529
  • Peer Reviewed
• [Journal Article] Pronounced Photonic Effects of High-Pressure Water Vapor Annealing on Nanocrystalline Porous Silicon (2007)
  • Author(s): B.Gelloz, T.Shibata, R.Mentek, N.Koshida
  • Journal Title: Mater. Res. Symp. Proc. 958
• [Journal Article] Synthesis and Optical Properties of Silicon Oxide Nanowires (2007)
  • Author(s): B.Gelloz, Y.Coffinier, B.Salhi, N.Koshida, G.Patriarche, R.Boukherroub
  • Journal Title: Mater. Res. Symp. Proc. 958
• [Journal Article] 1インチ256×192画素アクティブ駆動型HEED冷陰極HARP撮像板 (2007)
  • Author(s): 難波正和, 他16名
  • Journal Title: 映像情報メディア学会誌 61 Pages: 387-392
• [Journal Article] New design principle and Fabrication Process of Silicon 3-dimensional Photonic Crystal Structures (2007)
  • Author(s): D.Hippo, K.Urakawa, Y.Kawata, Y.Tsuchiya, H.Mizuta, N.Koshida, S.Oda
  • Journal Title: Jpn. J. Appl. Phys. 46 Pages: 633-637
• [Journal Article] Tunable output directivity of thermally induced ultrasonic generator based on nanocrystalline porous silicon. (2006)
  • Author(s): Y. Watabe, Y. Honda, and N. Koshida
  • Journal Title: Jpn. J. Appl. Phys. 45 Pages: 7240-7242
  • Description: 「研究成果報告書概要(和文)」より
  • Peer Reviewed
• [Journal Article] Characteristics of thermally induced ultrasonic emission from nanocrystalline porous silicon device under impulse operation. (2006)
  • Author(s): Y. Watabe, Y. Honda, and N. Koshida
  • Journal Title: Jpn. J. Appl. Phys. 45 Pages: 3645-3647
  • Description: 「研究成果報告書概要(和文)」より
  • Peer Reviewed
• [Journal Article] Wafer-compatible fabrication and characteristics of nanocrystalline silicon thermally induced ultrasound emitters. (2006)
  • Author(s): T. Kihara, T. Harada and N. Koshida
  • Journal Title: Sensors and Actuators A: Physical 125 Pages: 422-428
  • Description: 「研究成果報告書概要(和文)」より
  • Peer Reviewed
• [Journal Article] Highly enhanced photoluminescence of as-anodized and electrochemically oxidized nanocrystalline p-type porous silicon treated by high-pressure water vapor annealing. (2006)
  • Author(s): B. Gelloz and N. Koshida
  • Journal Title: Thin Solid Films 508 Pages: 406-409
  • Description: 「研究成果報告書概要(和文)」より
  • Peer Reviewed
• [Journal Article] Fabrication of active-matrix high-efficiency electron emission device and its application to high-sensitivity image sensing. (2006)
  • Author(s): N. Negishi, R. Tanaka, T. Nakada, K. Sakemura, Y. Okuda, H. Satoh, A. Watanabe, T. Yoshikawa, K. Ogasawara, M. Nanba, S. Okazaki, K. Tanioka, N. Egami, and N. Koshida
  • Journal Title: J. Vac. Sci. Technol. B 24 Pages: 1021-1025
  • Description: 「研究成果報告書概要(和文)」より
  • Peer Reviewed
• [Journal Article] Stable electroluminescence of nanocrystalline silicon device activated by high pressure water vapor annealing. (2006)
  • Author(s): B. Gelloz, T. Shibata and N. Koshida
  • Journal Title: Appl. Phys. Lett. 89 Pages: 191103-5
  • Description: 「研究成果報告書概要(和文)」より
  • Peer Reviewed
• [Journal Article] Reproduction of mouse-pup ultrasonic vocalizations by nanocrystalline silicon thermoacoustic emitter. (2006)
  • Author(s): T. Kihara, T. Harada, M. Kato, K. Nakano, O. Murakami, T. Kikusui, and N. Koshida
  • Journal Title: Appl. Phys. Lett. 88 Pages: 43902-4
  • Description: 「研究成果報告書概要(和文)」より
  • Peer Reviewed
• [Journal Article] Fast electrochromic effect obtained from solid-state inorganic thin film configuration with a carrier accumulation structure. (2006)
  • Author(s): H. Yoshimura and N. Koshida
  • Journal Title: Appl. Phys. Lett. 88 Pages: 93509-11
  • Description: 「研究成果報告書概要(和文)」より
  • Peer Reviewed
• [Journal Article] Highly enhanced efficiency and stability of photo-and electro-luminescence of nano-crystalline porous silicon by high-pressure water vapor annealing. (2006)
  • Author(s): B. Gelloz and N. Koshida
  • Journal Title: Jpn. J. Appl. Phys. 45 Pages: 3462-3465
  • NAID: 10022541088
  • Description: 「研究成果報告書概要(和文)」より
  • Peer Reviewed
• [Journal Article] Acoustic emission characteristics of nanocrystalline porous silicon device driven as an ultrasonic speaker. (2006)
  • Author(s): K. Tsubaki, T. Komoda and N. Koshida
  • Journal Title: Jpn. J. Appl. Phys. 45 Pages: 3642-3644
  • NAID: 10022542101
  • Description: 「研究成果報告書概要(和文)」より
  • Peer Reviewed
• [Journal Article] Quick response observed in solid-state electrochromic device with an interfacial barrier structure. (2006)
  • Author(s): H. Yoshimura and N. Koshida
  • Journal Title: Jpn. J. Appl. Phys. 45 Pages: 3479-3481
  • NAID: 10022541895
  • Description: 「研究成果報告書概要(和文)」より
  • Peer Reviewed
• [Journal Article] Stable electroluminescence of nanocrystalline silicon device activated by high pressure water vapor annealing (2006)
  • Author(s): B., Gelloz, T., Shibata, N., Koshida
  • Journal Title: Appl. Phys. Lett 89 Pages: 191103-5
  • Description: 「研究成果報告書概要(欧文)」より
• [Journal Article] Reproduction of mouse-pup ultrasonic vocalizations by nanocrystalline silicon thermoacoustic emitter (2006)
  • Author(s): T., Kihara, T., Harada, M., Kato, K., Nakano, O., Murakami, T., Kikusui, N., Koshida
  • Journal Title: Appl. Phys. Lett 88 Pages: 43902-4
  • Description: 「研究成果報告書概要(欧文)」より
• [Journal Article] Tunable output directivity of thermally induced ultrasonic generator based on nanocrystalline porous silicon (2006)
  • Author(s): Y., Watabe, Y., Honda, N., Koshida
  • Journal Title: Jpn. J. Appl. Phys 45 Pages: 7240-7242
  • Description: 「研究成果報告書概要(欧文)」より
• [Journal Article] Fast electrochromic effect obtained from solid-state inorganic thin film configuration with a carrier accumulation structure (2006)
  • Author(s): H., Yoshimura, N., Koshida
  • Journal Title: Appl. Phys. Lett 88 Pages: 93509-11
  • Description: 「研究成果報告書概要(欧文)」より
• [Journal Article] The characteristics of thermally induced ultrasonic emission from nanocrystalline porous silicon device under impulse operation (2006)
  • Author(s): Y., Watabe, Y., Honda, N., Koshida
  • Journal Title: Jpn. J. Appl. Phys 45 Pages: 3645-3647
  • Description: 「研究成果報告書概要(欧文)」より
• [Journal Article] Highly Enhanced Efficiency and Stability of Photo- and Electro- Luminescence of Nano-Crystalline Porous Silicon by High-Pressure Water Vapor Annealing (2006)
  • Author(s): B., Gelloz, N., Koshida
  • Journal Title: Jpn. J. Appl. Phys 45 Pages: 3462-3465
  • NAID: 10022541088
  • Description: 「研究成果報告書概要(欧文)」より
• [Journal Article] Acoustic emission characteristics of nanocrystalline porous silicon device driven as an ultrasonic speaker. (2006)
  • Author(s): K., Tsubaki, T., Komoda, N., Koshida
  • Journal Title: Jpn. J. Appl. Phys. 45 Pages: 3642-3644
  • NAID: 10022542101
  • Description: 「研究成果報告書概要(欧文)」より
• [Journal Article] Quick response observed in solid-state electrochromic device with an interfacial barrier structure (2006)
  • Author(s): H., Yoshimura, N., Koshida
  • Journal Title: Jpn. J. Appl. Phys 45 Pages: 3479-3481
  • NAID: 10022541895
  • Description: 「研究成果報告書概要(欧文)」より
• [Journal Article] Fabrication of active-matrix high-efficiency electron emission device and its application to high-sensitivity image sensing. (2006)
  • Author(s): N., Negishi, R., Tanaka, T., Nakada, K., Sakemura, Y., Okuda, H., Satoh, A., Watanabe, T., Yoshikawa, K., Ogasawara, M., Nanba, S., Okazaki, K., Tanioka, N., Egami, N., Koshida
  • Journal Title: J. Vac. Sci. Technol. B 24 Pages: 1021-1025
  • Description: 「研究成果報告書概要(欧文)」より
• [Journal Article] Highly enhanced photoluminescence of as-anodized and electrochemically oxidized nanocrystalline p-type porous silicon treated by high-pressure water vapor annealing. (2006)
  • Author(s): B., Gelloz, N., Koshida
  • Journal Title: Thin Solid Films 508 Pages: 406-409
  • Description: 「研究成果報告書概要(欧文)」より
• [Journal Article] Wafer-compatible fabrication and characteristics of nanocrystalline silicon thermally induced ultrasound emitters (2006)
  • Author(s): T., Kihara, T., Harada, N., Koshida
  • Journal Title: Sensors and Actuators A : Physical Vol. 125 Pages: 422-428
  • Description: 「研究成果報告書概要(欧文)」より
• [Journal Article] Tunable output directivity of thermally induced ultrasonic generator based on nanocrystalline porous silicon. (2006)
  • Author(s): Y.Watabe, Y.Honda, N.Koshida
  • Journal Title: Jpn. J. Appl. Phys. 45 Pages: 7240-7242
• [Journal Article] The characteristics of thermally induced ultrasonic emission from nanocrystalline porous silicon device under impulse operation (2006)
  • Author(s): Y.Watabe, Y.Honda, N.Koshida
  • Journal Title: Jpn. J. Appl. Phys. 45 Pages: 3645-3647
• [Journal Article] Wafer-compatible fabrication and characteristics of nanocrystalline silicon thermally induced ultrasound emitters (2006)
  • Author(s): T.Kihara, T.Harada, N.Koshida
  • Journal Title: Sensors and Actuators A : Physical 125 Pages: 422-428
• [Journal Article] Highly enhanced photoluminescence of as-anodized and electrochemically oxidized nanocrystalline p-type porous silicon treated by high-pressure water vapor annealing (2006)
  • Author(s): B.Gelloz, N.Koshida
  • Journal Title: Thin Solid Films 508 Pages: 406-409
• [Journal Article] Fabrication of active-matrix high-efficiency electron emission device and its application to high-sensitivity image sensing (2006)
  • Author(s): N.Negishi, R.Tanaka, T.Nakada, K.Sakemura, Y.Okuda, H.Satoh, A.Watanabe, T.Yoshikawa, K.Ogasawara, M.Nanba, S.Okazaki, K.Tanioka, N.Egami, N.Koshida
  • Journal Title: J. Vac. Sci. Technol. B 24 Pages: 1021-1025
• [Journal Article] Stable electroluminescence of nanocrystalline silicon device activated by high pressure water vapor annealing (2006)
  • Author(s): B.Gelloz, T.Shibata, N.Koshida
  • Journal Title: Appl. Phys. Lett. 89 Pages: 191103-5
• [Presentation] Effects of Thermal Effusivity in Nanocrystalline Porous Silicon on Long-Term Operation of Thermally Indued Ultrasonic Emission. (2009)
  • Author(s): Y. Watabe, Y. Honda, and N. Koshida
  • Organizer: Int. Conf. on Solid State Devices and Materials
  • Place of Presentation: Yokohama, Japan
  • Year and Date: 2009-09-13
  • Description: 「研究成果報告書概要(和文)」より
• [Presentation] Mechanism of one-directional nano etching in silicon using magnetic-field-assisted anodization. (2008)
  • Author(s): D. Hippol, K. Urakawa, Y. Tsuchiya, H. Mizuta, N. Koshida, and S. Oda
  • Organizer: Int. Conf. On Porous Semiconductors Sci. Technol.
  • Place of Presentation: Mallorca, Spain
  • Year and Date: 2008-03-13
  • Description: 「研究成果報告書概要(和文)」より
• [Presentation] Polarization memory in enhanced photoluminescence of porous silicon asa trace of energy transfer to embedded laser dye molecules. (2008)
  • Author(s): A. Chouket, H. Koyama, B. Gelloz, H. Elhouichet, M. Oueslati, N. Koshida
  • Organizer: Int. Conf. On Porous Semiconductors Sci. Technol.
  • Place of Presentation: Mallorca, Spain
  • Year and Date: 2008-03-13
  • Description: 「研究成果報告書概要(和文)」より
• [Presentation] Mechanism of one-directional nano etching in silicon using magnetic-field-assisted anodization (2008)
  • Author(s): D., Hippol, K., Urakawa, Y., Tsuchiya, H., Mizuta, N., Koshida, S., Oda
  • Organizer: Int. Conf. on Porous Semiconductors Sci. Technol
  • Place of Presentation: Mallorca, Spain
  • Year and Date: 2008-03-13
  • Description: 「研究成果報告書概要(欧文)」より
• [Presentation] Polarization memory in enhanced photoluminescence of porous silicon as a trace of energy transfer to embedded laser dye molecules (2008)
  • Author(s): A., Chouket, H., Koyama, B., Gelloz, H., Elhouichet, M., Oueslati, N., Koshida
  • Organizer: Int. Conf. on Porous Semiconductors Sci. Technol
  • Place of Presentation: Mallorca, Spain
  • Year and Date: 2008-03-13
  • Description: 「研究成果報告書概要(欧文)」より
• [Presentation] Mechanism of one-directional nano etching in silicon using magnetic-field-assisted anodization. (2008)
  • Author(s): D. Hippo, K. Urakawa, Y. Tsuchiya, H. Mizuta, N. Koshida, and S. Oda
  • Organizer: Int. Conf. On Porous Semiconductors Science and Technology
  • Place of Presentation: Mallorca, Spain
  • Year and Date: 2008-03-13
• [Presentation] Polarization memory in enhanced photoluminescence of porous silicon asa trace of energy transfer to embedded laser dye molecules (2008)
  • Author(s): A. Chouket, H. Koyama, B. Gelloz, H. Elhouichet, M. Oueslati, N. Koshida
  • Organizer: Int. Conf. On Porous Semiconductors Science and Technology
  • Place of Presentation: Mallorca, Spain
  • Year and Date: 2008-03-13
• [Presentation] Photonic characteristics of nanocrystalline porous silicon treated by high-pressure water vapor annealing. (2008)
  • Author(s): B. Gelloz and N. Koshida
  • Organizer: Int. Conf. On Porous Semiconductors Sci. Technol.
  • Place of Presentation: Mallorca, Spain
  • Year and Date: 2008-03-12
  • Description: 「研究成果報告書概要(和文)」より
• [Presentation] Photonic characteristics of nanocrystalline porous silicon treated by high-pressure water vapor annealing (2008)
  • Author(s): B., Gelloz, N., Koshida
  • Organizer: Int. Conf. on Porous Semiconductors Sci. Technol
  • Place of Presentation: Mallorca, Spain
  • Year and Date: 2008-03-12
  • Description: 「研究成果報告書概要(欧文)」より
• [Presentation] Photonic characteristics of nanocrystalline porous silicon treated by high-pressure water vapor annealing. (2008)
  • Author(s): B. Gelloz and N. Koshida
  • Organizer: Int. Conf. On Porous Semiconductors Science and Technology
  • Place of Presentation: Mallorca, Spain
  • Year and Date: 2008-03-12
• [Presentation] Porous silicon technology as a nanodevice platform(Invited). (2008)
  • Author(s): N. Koshida,
  • Organizer: Int. Conf. On Porous Semiconductors Sci. Technol.
  • Place of Presentation: Mallorca, Spain
  • Year and Date: 2008-03-11
  • Description: 「研究成果報告書概要(和文)」より
• [Presentation] Porous silicon technology as a nanodevice platform (Invited) (2008)
  • Author(s): N., Koshida
  • Organizer: Int. Conf. on Porous Semiconductors Sci. Technol
  • Place of Presentation: Mallorca, Spain
  • Year and Date: 2008-03-11
  • Description: 「研究成果報告書概要(欧文)」より
• [Presentation] Porous silicon technology as a nanodevice platform(Invited) (2008)
  • Author(s): N. Koshida
  • Organizer: Int. Conf. On Porous Semiconductors Science and Technology
  • Place of Presentation: Mallorca, Spain
  • Year and Date: 2008-03-11
• [Presentation] Low Voltage and High Speed Operation of 640X480 Pixel Ac-tive-matrix HEED(High-efficiency Electron Emission Device)Array for HARP Image Sensor. (2007)
  • Author(s): Y. Okuda, T. Sato, Y. Matsuba, R. Tanaka, T. Nakada, K. Sakemura, N. Negishi, A. Watanabe, T. Yoshikawa, K. Ogasawara, M. Nanba, S. Okazaki, K. Tanioka, N. Egami, A. Kobayashi, and N. Koshida
  • Organizer: Int. Display Workshop Sapporo 2007
  • Place of Presentation: Sapporo, Japan
  • Year and Date: 2007-12-06
  • Description: 「研究成果報告書概要(和文)」より
• [Presentation] Low Voltage and High Speed Operation of 640X480 Pixel Active-matrix HEED (High-efficiency Electron Emission Device) Array for HARP Image Sensor (2007)
  • Author(s): Y., Okuda, et. al.
  • Organizer: Int. Display Workshop
  • Place of Presentation: Sapporo, Japan
  • Year and Date: 2007-12-06
  • Description: 「研究成果報告書概要(欧文)」より
• [Presentation] Low voltage and high speed operation of 640×480 pixel active-matrix HEED(high-efficiency electron emission device) array for HARP image sensor. (2007)
  • Author(s): Y. Okuda, et. al.
  • Organizer: Int. Display Workshop
  • Place of Presentation: Sapporo
  • Year and Date: 2007-12-06
• [Presentation] Improved Photoconduction Effects of Nanometer-Sized Si Dot Multilayers. (2007)
  • Author(s): Y. Hirano, S. Yamazaki and N. Koshida
  • Organizer: Int. Conf. on Solid State Devices and Materials
  • Place of Presentation: Tsukuba, Japan
  • Year and Date: 2007-09-21
  • Description: 「研究成果報告書概要(和文)」より
• [Presentation] Photonic and related device applications of nano-crystalline silicon(Invited). (2007)
  • Author(s): Koshida and B. Gelloz
  • Organizer: SPIE Optics East 2007
  • Place of Presentation: Boston. USA
  • Year and Date: 2007-09-21
  • Description: 「研究成果報告書概要(和文)」より
• [Presentation] Improved Photoconduction Effects of Nanometer-Sized Si Dot Multilayers, Int. Conf. on Solid State Devices and Materials, Tsukuba, 2007, pp. 1116-1117 (2007)
  • Author(s): Y., Hirano, S., Yamazaki, N., Koshida
  • Organizer: Int. Conf. on Solid State Devices and Materials
  • Place of Presentation: Tsukuba Japan
  • Year and Date: 2007-09-21
  • Description: 「研究成果報告書概要(欧文)」より
• [Presentation] Photonic and related device applications of nano-crystalline silicon (Invited) (2007)
  • Author(s): Koshida, B., Gelloz
  • Organizer: SPIE Optics East
  • Place of Presentation: Boston. USA
  • Year and Date: 2007-09-21
  • Description: 「研究成果報告書概要(欧文)」より
• [Presentation] Improved photoconduction effects of manometer-sized Si dot multilayers. (2007)
  • Author(s): Y. Hirano, S. Yamazaki and N. Koshida
  • Organizer: Int. Conf. on Solid State Devices and Materials
  • Place of Presentation: Tsukuba
  • Year and Date: 2007-09-21
• [Presentation] Light-emissive nonvolatile memory based on nanocrystalline porous Si. (2007)
  • Author(s): B. Gelloz, Y. Yoshida, N. Koshida
  • Organizer: 4th IEEE Int. Conf. on Group IV Photonics
  • Place of Presentation: Tokyo, Japan
  • Year and Date: 2007-09-20
  • Description: 「研究成果報告書概要(和文)」より
• [Presentation] Light-emissive nonvolatile memory based on nanocrystalline porous Si (2007)
  • Author(s): B., Gelloz, Y., Yoshida, N., Koshida
  • Organizer: 4th IEEE Int. Conf. on Grou IV Photonics
  • Place of Presentation: Tokyo, Japan
  • Year and Date: 2007-09-20
  • Description: 「研究成果報告書概要(欧文)」より
• [Presentation] Light-emissive nonvolatile memory based on nanocrystalline porous Si. (2007)
  • Author(s): B. Gelloz, Y. Yoshida, N. Koshida
  • Organizer: 4th IEEE Int. Conf. on Group IV Photonics
  • Place of Presentation: Tokyo
  • Year and Date: 2007-09-20
• [Presentation] Photonic and related device applications of nano-crystalline silicon (Invited). (2007)
  • Author(s): N. Koshida and B. Gelloz
  • Organizer: SPIE Optics East
  • Place of Presentation: Boston, USA
  • Year and Date: 2007-09-20
• [Presentation] Cavity Effect in Nanocrystalline Porous Silicon Ballistic Lighting Device. (2007)
  • Author(s): B. Gelloz, M. Sato and N. Koshida
  • Organizer: Int. Conf. on Solid State Devices and Materials
  • Place of Presentation: Tsukuba, Japan
  • Year and Date: 2007-09-19
  • Description: 「研究成果報告書概要(和文)」より
• [Presentation] Cavity Effect in Nanocrystalline Porous Silicon Ballistic Lighting Device (2007)
  • Author(s): B., Gelloz, M., Sato, N., Koshida
  • Organizer: Int. Conf. on Solid State Devices and Materials
  • Place of Presentation: Tsukuba Japan
  • Year and Date: 2007-09-19
  • Description: 「研究成果報告書概要(欧文)」より
• [Presentation] Cavity effect in nanocrystalline porous silicon ballistic lighting device. (2007)
  • Author(s): B. Gelloz, M. Sato and N. Koshida
  • Organizer: Int. Conf. on Solid State Devices and Materials
  • Place of Presentation: Tsukuba
  • Year and Date: 2007-09-19
• [Presentation] Photonic, electronic and acoustic devices based on nanocrystal silicon(Invited). (2007)
  • Author(s): N. Koshida and B. Gelloz
  • Organizer: Int. Conf. on Optical, Optoelectronic and Photonic Materials and Applications
  • Place of Presentation: London, UK
  • Year and Date: 2007-07-30
  • Description: 「研究成果報告書概要(和文)」より
• [Presentation] Photonic, electronic, and acoustic devices based on nanocrystalline silicon (Invited) (2007)
  • Author(s): N., Koshida, B., Gelloz
  • Organizer: Int. Conf. on Optical, Optoelectronic and Photonic Materials and Application
  • Place of Presentation: London, UK.
  • Year and Date: 2007-07-30
  • Description: 「研究成果報告書概要(欧文)」より
• [Presentation] Photonic, electronic, and acoustic devices based on nanocrystalline silicon (Invited). (2007)
  • Author(s): N. Koshida and B. Gelloz
  • Organizer: Int. Conf. on Optical, Optoelectronic and Photonic Mater. and Applications
  • Place of Presentation: London, UK
  • Year and Date: 2007-07-30
• [Presentation] Characteristics of nanosilicon ballistic cold cathode in liquids as an active electrode. (2007)
  • Author(s): T. Ohta, B. Gelloz, and N. Koshida
  • Organizer: Int. Vac. Nanoelectron. Conf.
  • Place of Presentation: Chicago, USA
  • Year and Date: 2007-07-11
  • Description: 「研究成果報告書概要(和文)」より
• [Presentation] Development of a high-resolution active-matrix electron emitter array for application to high-sensitivity image sensing(Invited). (2007)
  • Author(s): N. Negishi, Y. Matsuba, R. Tanaka, T. Nakada, K. Sakemura, Y. Okuda, A. Watanabe, T. Yoshikawa, K. Ogasawara, M. Nanba, S. Okazaki, K. Tanioka, N. Egami, and N. Koshida
  • Organizer: Int. Vac. Nanoelectron. Conf.
  • Place of Presentation: Chicago, USA
  • Year and Date: 2007-07-11
  • Description: 「研究成果報告書概要(和文)」より
• [Presentation] Characteristics of nanosilicon ballistic cold cathode in liquids as an active electrode (2007)
  • Author(s): T., Ohta, B., Gelloz, N., Koshida
  • Organizer: Int. Vac. Nanoelectron. Conf
  • Place of Presentation: Chicago, USA
  • Year and Date: 2007-07-11
  • Description: 「研究成果報告書概要(欧文)」より
• [Presentation] Development of a super-high sensitive image sensor using 640×480 pixel active-matrix high-efficency electrion emission device (Invited) (2007)
  • Author(s): N., Negishi, T., Sato, Y., Matsuba, R., Tanaka, T., Nakada,. Sakemura, Y., Okuda, A., Watanabe, T., Yoshikawa, K., Ogasawara, M., Nanba, S., Okazaki, K., Tanioka, N., Egami, N., Koshida
  • Organizer: Int. Vac. Nanoelectron. Conf
  • Place of Presentation: Chicago, USA
  • Year and Date: 2007-07-11
  • Description: 「研究成果報告書概要(欧文)」より
• [Presentation] Characteristics of nanosilicon ballistic cold cathode in liquids as an active electrode. (2007)
  • Author(s): T. Ohta, B. Gelloz, and N. Koshida
  • Organizer: Int. Vacuum Nanoelectronics Conf.
  • Place of Presentation: Chicago, USA
  • Year and Date: 2007-07-11
• [Presentation] Development of a super-high sensitive image sensor using 640×480 pixel active-matrix high-efficency electrion emission device(Invited). (2007)
  • Author(s): N. Negishi, et. al.
  • Organizer: Int. Vacuum Nanoelectronics Conf.
  • Place of Presentation: Chicago, USA
  • Year and Date: 2007-07-11
• [Presentation] Functional Devices Based on Quantum-sized Nanosilicon(Invited). (2007)
  • Author(s): N. Koshida and B. Gelloz
  • Organizer: 2007 Asia-Pasific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices
  • Place of Presentation: Gyeongju, Korea
  • Year and Date: 2007-06-25
  • Description: 「研究成果報告書概要(和文)」より
• [Presentation] Functional Devices Based on Quantum-sized Nanosilicon (Invited). (2007)
  • Author(s): N. Koshida and B. Gelloz
  • Organizer: 2007 Asia-Pasific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices
  • Place of Presentation: Gyeongju, Korea
  • Year and Date: 2007-06-25
• [Presentation] Functional Devices Based on Quantum-sized Nanosilicon (Invited) (2007)
  • Author(s): N., Koshida, B., Gelloz
  • Organizer: 2007 Asia-Pasific Workshop on Fundamentals and Applications of Advance Semiconductor Devices
  • Place of Presentation: Gyeongju, Korea
  • Year and Date: 2007-06-02
  • Description: 「研究成果報告書概要(欧文)」より
• [Presentation] Polarization memory of blue and red luminescence from nanocrystalline porous silicon treated by high-pressure water vapor annealing. (2007)
  • Author(s): B. Gelloz, H. Koyama, and N. Koshida
  • Organizer: 5th Int. Conf. on Silicon Epitaxy and Heterostructures
  • Place of Presentation: Marseille, France
  • Year and Date: 2007-05-24
  • Description: 「研究成果報告書概要(和文)」より
• [Presentation] Polarization memory of blue and red luminescence from nanocrystalline porous silicon treated by high-pressure water vapor annealing (2007)
  • Author(s): B., Gelloz, H., Koyama, N., Koshida
  • Organizer: 5th Int. Conf. on Silicon Epitaxy and Heterostructure
  • Place of Presentation: Marseille, France
  • Year and Date: 2007-05-24
  • Description: 「研究成果報告書概要(欧文)」より
• [Presentation] ナノクリスタルSi発光デバイスの展望(招待). (2007)
  • Author(s): 越田 信義
  • Organizer: 応用物理学会結晶工学分科会第126回研究会
  • Place of Presentation: 東京
  • Year and Date: 2007-04-26
• [Presentation] Flexible electrochromic device on polymers(Invited). (2007)
  • Author(s): N. Koshida
  • Organizer: International Conference on Coating on Glasses and Plastics
  • Place of Presentation: Tokyo, Japan
  • Year and Date: 2007-03-21
  • Description: 「研究成果報告書概要(和文)」より
• [Presentation] Functional Properties of Nanosilicon and its Possible Application to Image Devices(Invited). (2006)
  • Author(s): N. Koshida
  • Organizer: The 13th International Display Workshop
  • Place of Presentation: Ohtsu, Japan
  • Year and Date: 2006-12-08
  • Description: 「研究成果報告書概要(和文)」より
• [Presentation] Functional Properties of Nanosilicon and its Possible Application to Image Devices (Invited) (2006)
  • Author(s): N., Koshida
  • Organizer: 13th International Display Workshop
  • Place of Presentation: Ohtsu, Japan
  • Year and Date: 2006-12-08
  • Description: 「研究成果報告書概要(欧文)」より
• [Presentation] Synthesis and optical properties of silicon oxide nanowires. (2006)
  • Author(s): B. Gelloz, Y. Coffinier, B. Salhi, N. Koshida, G Patriarche, and R. Boukherroub
  • Organizer: Mater. Res. Soc. Symp.
  • Place of Presentation: Boston. USA
  • Year and Date: 2006-11-30
  • Description: 「研究成果報告書概要(和文)」より
• [Presentation] Pronounced photonic effects of high-pressure water vapor annealing on nanocrystalline porous silicon. (2006)
  • Author(s): B. Gelloz, T. Shibata, R. Mentek, and N. Koshida
  • Organizer: Mater. Res. Soc. Symp.
  • Place of Presentation: Boston. USA
  • Year and Date: 2006-11-30
  • Description: 「研究成果報告書概要(和文)」より
• [Presentation] Synthesis and optical properties of silicon oxide nanowires (2006)
  • Author(s): B., Gelloz, Y., Coffinier, B., Salhi, N., Koshida, G., Patriarche, R., Boukherroub
  • Organizer: Mater. Res. Soc. Int. Symp.
  • Place of Presentation: Boston, USA.
  • Year and Date: 2006-11-30
  • Description: 「研究成果報告書概要(欧文)」より
• [Presentation] Pronounced photonic effects of high-pressure water vapor annealing on nanocrystalline porous silicon (2006)
  • Author(s): B., Gelloz, T., Shibata, R., Mentek, N., Koshida
  • Organizer: Mater. Res. Soc. Int. Symp
  • Place of Presentation: Boston, USA.
  • Year and Date: 2006-11-30
  • Description: 「研究成果報告書概要(欧文)」より
• [Presentation] Blue and Red Luminescence Bands of Nanocrystalline Porous Silicon Induced by High-Pressure Water Vapor Annealing. (2006)
  • Author(s): B. Gelloz and N. Koshida
  • Organizer: Electrochemical Society Int. Symposium
  • Place of Presentation: Cancun, Mexico
  • Year and Date: 2006-11-02
  • Description: 「研究成果報告書概要(和文)」より
• [Presentation] Blue and Red Luminescence Bands of Nanocrystalline Porous Silicon Induced by High-Pressure Water Vapor Annealing (2006)
  • Author(s): B., Gelloz, N., Koshida
  • Organizer: Electrochem. Soc. Int. Symp.
  • Place of Presentation: Cancun, Mexico
  • Year and Date: 2006-11-02
  • Description: 「研究成果報告書概要(欧文)」より
• [Presentation] Effect of Bi-Layer Structure of the Long-Term Stability of Nanocrystalline Porous Silicon Ultrasonic Emitter. (2006)
  • Author(s): Y. Watabe, Y. Honda, and N. Koshida, 2006,
  • Organizer: Int. 1 Microprocesses and Nanotechnology Conference
  • Place of Presentation: Kamakura, Japan
  • Year and Date: 2006-10-26
  • Description: 「研究成果報告書概要(和文)」より
• [Presentation] Effect of Bi-Layer Structure of the Long-Term Stability of Nanocrystalline Porous Silicon Ultrasonic Emitter (2006)
  • Author(s): Y., Watabe, Y., Honda, N., Koshida
  • Organizer: Int. Microprocesses and Nanotechnology Conference
  • Place of Presentation: Kamakura, Japan
  • Year and Date: 2006-10-20
  • Description: 「研究成果報告書概要(欧文)」より
• [Presentation] Development of an active-matrix "HEED" cold cathode and its application to animage sensor. (2006)
  • Author(s): R. Tanaka, Y. Matsuba, T. Nakada, K. Sakemura, N. Negishi, Y. Okuda, H. Sato, A. Watanabe T. Yoshikawa, K. Ogasawara, M. Nanba, S. Okazaki, K. Tanioka, N. Egami, and N. Koshida.
  • Organizer: Int. Symp. on Discharges and Electrical Insulation in Vacuum
  • Place of Presentation: Matsue, Japan
  • Year and Date: 2006-09-20
  • Description: 「研究成果報告書概要(和文)」より
• [Presentation] Development of an active-matrix "HEED" cold cathode and its application to an image sensor. (2006)
  • Author(s): R., Tanaka, Y., Matsuba, T., Nakada, K., Sakemura, N., Negishi, Y., Okuda, H., Sato, A., Watanabe, T., Yoshikawa, K., Ogasawara, M., Nanba, S., Okazaki, K., Tanioka, N., Egami, N., Koshida
  • Organizer: Int. Symp. on Discharges and Electrical Insulation in Vacuum
  • Place of Presentation: Matsue, Japan
  • Year and Date: 2006-09-20
  • Description: 「研究成果報告書概要(欧文)」より
• [Presentation] Functions and Device Applications of Quantum-sized Silicon(Invited). (2006)
  • Author(s): N. Koshida
  • Organizer: Int. Conf. on Solid State Devices and Materials
  • Place of Presentation: Yokohama, Japan
  • Year and Date: 2006-09-13
  • Description: 「研究成果報告書概要(和文)」より
• [Presentation] Highly Efficient and Stable Photoluminescence of Nanocrystalline Porous Silicon with Fully Annealed and Passivated Surfaces. (2006)
  • Author(s): B. Gellozl and N. Koshida
  • Organizer: Int. Conf. on Solid State Devices and Materials
  • Place of Presentation: Yokohama, Japan
  • Year and Date: 2006-09-13
  • Description: 「研究成果報告書概要(和文)」より
• [Presentation] Development of Flexible Electrochromic Device with Thin Film Configuration. (2006)
  • Author(s): H. Yoshimura, T. Sakaguchi and N. Koshida
  • Organizer: Int. Conf. on Solid State Devices and Materials
  • Place of Presentation: Yokohama, Japan
  • Year and Date: 2006-09-13
  • Description: 「研究成果報告書概要(和文)」より
• [Presentation] Functions and Device Applications of Quantum-sized Silicon (Invited) (2006)
  • Author(s): N., Koshida
  • Organizer: Int. Conf. on Solid State Devices and Materials
  • Place of Presentation: Yokohama, Japan
  • Year and Date: 2006-09-13
  • Description: 「研究成果報告書概要(欧文)」より
• [Presentation] Highly Efficient and Stable Photoluminescence of Nanocrystalline Porous Silicon with Fully Annealed and Passivated Surfaces (2006)
  • Author(s): B., Gelloz, N., Koshida
  • Organizer: Int. Conf. on Solid State Devices and Materials
  • Place of Presentation: Yokohama, Japan
  • Year and Date: 2006-09-13
  • Description: 「研究成果報告書概要(欧文)」より
• [Presentation] Development of Flexible Electrochromic Device with Thin Film Configuration (2006)
  • Author(s): H., Yoshimura, T., Sakaguchi, N., Koshida
  • Organizer: Int. Conf. on Solid State Devices and Materials
  • Place of Presentation: Yokohama, Japan.
  • Year and Date: 2006-09-13
  • Description: 「研究成果報告書概要(欧文)」より
• [Presentation] Effects of Thermal Effusivity in Nanocrystalline Porous Silicon on Long-Term Operation of Thermally Induced Ultrasonic Emission (2006)
  • Author(s): Y., Watabe, Y., Honda, N., Koshida
  • Organizer: Int. Conf. on Solid State Devices and Materials
  • Place of Presentation: Yokohama, Japan
  • Year and Date: 2006-09-13
  • Description: 「研究成果報告書概要(欧文)」より
• [Presentation] Emission characteristics of nanocrystalline porous silicon ballistic cold cathode inatmospheric ambience. (2006)
  • Author(s): T. Ohta, A. Kojima, and N. Koshida
  • Organizer: Int. Vacuum Nanoelectronics Conf.
  • Place of Presentation: Guilin, China
  • Year and Date: 2006-07-20
  • Description: 「研究成果報告書概要(和文)」より
• [Presentation] Development of a high-resolution active-matrix electron emitter array for application to high-sensitivity image sensing. (2006)
  • Author(s): N. Negishi, Y. Matsuba, R. Tanaka, T. Nakada, K. Sakemura, K. Sakemura, Y. Okuda, A. Watanabe, T. Yoshikawa, K. Ogasawara, M. Nanba, S. Okazaki, K. Tanioka, N. Egami, N. Koshida
  • Organizer: Int. Vacuum Nanoelectronics Conf.
  • Place of Presentation: Guilin, China
  • Year and Date: 2006-07-20
  • Description: 「研究成果報告書概要(和文)」より
• [Presentation] Emission characteristics of nanocrystalline porous silicon ballistic cold cathode in atmospheric ambience (2006)
  • Author(s): T., Ohta, A., Kojima, N., Koshida
  • Organizer: Int. Vacuum Nanoelectronics Conf.
  • Place of Presentation: Guilin, China
  • Year and Date: 2006-07-20
  • Description: 「研究成果報告書概要(欧文)」より
• [Presentation] Development of a high-resolution active-matrix electron emitter array for application to high-sensitivity image sensing (2006)
  • Author(s): N., Negishi, Y., Matsuba, R., Tanaka, T., Nakada, K., Sakemura, K., Sakemura, Y., Okuda, A., Watanabe, T., Yoshikawa, K., Ogasawara, M., Nanba, S., Okazaki, K., Tanioka, N., Egami, N., Koshida
  • Organizer: Int. Vacuum Nanoelectronics Conf.
  • Place of Presentation: Guilin, China
  • Year and Date: 2006-07-20
  • Description: 「研究成果報告書概要(欧文)」より
• [Presentation] Luminescence and Related Functions of Nanocrystalline Porous Silicon(Invited). (2006)
  • Author(s): N. Koshida
  • Organizer: Int. Conf. on Optical, Optoelectronic and Photonic Materials and Applications
  • Place of Presentation: Darwin, Australia
  • Year and Date: 2006-07-18
  • Description: 「研究成果報告書概要(和文)」より
• [Presentation] Luminescence and Related Functions of Nanocrystalline Porous Silicon (Invited) (2006)
  • Author(s): N., Koshida
  • Organizer: International Conference on Optical and Optoelectronic Properties of Materials and Applications
  • Place of Presentation: Darwin. Australia
  • Year and Date: 2006-07-18
  • Description: 「研究成果報告書概要(欧文)」より
• [Presentation] Fabrication of silicon 3D photonic crystal structures in 100nm scale using double directional etching method. (2006)
  • Author(s): D. Hippo, K. Urakawa, Y. Kawata, Y. Tsuchiya, H. Mizuta, N. Koshida, S. Oda
  • Organizer: Conference on Lasers and Electro-Optics' 06
  • Place of Presentation: Los Angeles, USA
  • Year and Date: 2006-05-23
  • Description: 「研究成果報告書概要(和文)」より
• [Presentation] Fabrication of silicon 3D photonic crystal structures in 100nm scale using double directional etchings method. (2006)
  • Author(s): D., Hippo, K., Urakawa, Y., Kawata, Y., Tsuchiya, H., Mizuta, N., Koshida, S., Oda
  • Organizer: Conference on Lasers and Electro-Optics'06
  • Place of Presentation: Los Angeles, USA.
  • Year and Date: 2006-05-23
  • Description: 「研究成果報告書概要(欧文)」より
• [Presentation] Flexible electrochromic device on polymers (Invited) (2006)
  • Author(s): N., Koshida
  • Organizer: International Conference on Coating on Glasses and Plastics
  • Place of Presentation: Tokyo, Japan
  • Year and Date: 2006-03-21
  • Description: 「研究成果報告書概要(欧文)」より
• [Book] Semiconductor Quantum Structures (2007)
  • Author(s): N. Koshida, 他
  • Total Pages: 136
  • Publisher: Springer-Verlag
  • Description: 「研究成果報告書概要(和文)」より
• [Book] ナノ蛍光体の開発と応用 (2007)
  • Author(s): 越田信義, 他
  • Total Pages: 269
  • Publisher: シーエムシー、東京
  • Description: 「研究成果報告書概要(和文)」より
• [Book] Development and Application of Nanofluorescent Materials (2007)
  • Author(s): N., Koshida, et. al.
  • Total Pages: 269
  • Publisher: CMC Publ., Tokyo
  • Description: 「研究成果報告書概要(欧文)」より
• [Book] Luminescence and related properties of nanocrystalline porous silicon, in"Semiconductor Quantum Structures" (2007)
  • Author(s): N. Koshida
  • Publisher: Springer-Verlag, Berlin
• [Book] 『ナノ蛍光体の開発と応用』3-1節"Siナノ蛍光体" (2007)
  • Author(s): 越田信義
  • Publisher: シーエムシー、東京
• [Book] エコマテリアルハンドブック (2006)
  • Author(s): 越田信義, 他
  • Total Pages: 816
  • Publisher: 丸善
  • Description: 「研究成果報告書概要(和文)」より
• [Book] 電子物性・材料の事典 (2006)
  • Author(s): 越田信義, 他
  • Total Pages: 696
  • Publisher: 朝倉書店
  • Description: 「研究成果報告書概要(和文)」より
• [Book] MEMS/NEMSの最先端技術と応用展開 (2006)
  • Author(s): 越田信義, 他
  • Total Pages: 285
  • Publisher: フロンティア出版
  • Description: 「研究成果報告書概要(和文)」より
• [Book] Eco-Materials Handbook (2006)
  • Author(s): N., Koshida, et. al.
  • Total Pages: 816
  • Publisher: Maruzen Publ., Tokyo
  • Description: 「研究成果報告書概要(欧文)」より
• [Book] Handbook of Electronic Properties and Materials (2006)
  • Author(s): N., Koshida, et. al.
  • Total Pages: 695
  • Publisher: Maruzen Publ., Tokyo
  • Description: 「研究成果報告書概要(欧文)」より
• [Book] Advanced MEMS/NEMS Technology and Applications (2006)
  • Author(s): N., Koshida, et. al.
  • Total Pages: 285
  • Publisher: Frontier Publ., Tokyo
  • Description: 「研究成果報告書概要(欧文)」より
• [Book] エコマテリアルハンドブック(III部 第2章 ナノ構造制御材料を担当) (2006)
  • Author(s): 越田信義(分担執筆)
  • Total Pages: 816
  • Publisher: 丸善
• [Book] 電子物性・材料の事典(4.4.2 ディスプレイデバイスを担当) (2006)
  • Author(s): 越田信義(分担執筆)
  • Total Pages: 696
  • Publisher: 朝倉書店
• [Remarks] 「研究成果報告書概要(和文)」より
  • URL: http://www.tuat.ac.jp/~koslab/
• [Remarks]
  • URL: http://www.tuat.ac.jp/~koslab/
• [Patent(Industrial Property Rights)] 多孔質シリコン光素子 (2007)
  • Inventor(s): 越田信義
  • Industrial Property Rights Holder: 越田信義
  • Acquisition Date: 2007-02-20
  • Description: 「研究成果報告書概要(和文)」より
• [Patent(Industrial Property Rights)] 電子源電極及びそれを用いた装置 (2006)
  • Inventor(s): 越田信義・大田敢行
  • Industrial Property Rights Holder: 東京農工大学
  • Industrial Property Number: 2006-281866
  • Filing Date: 2006-10-16
  • Description: 「研究成果報告書概要(和文)」より
• [Patent(Industrial Property Rights)] 超音波音源および超音波センサ (2006)
  • Inventor(s): 越田信義・椿健治
  • Industrial Property Rights Holder: 農工大ティー・エル・オー
  • Industrial Property Number: 2006-223380
  • Filing Date: 2006-08-18
  • Description: 「研究成果報告書概要(和文)」より
• [Patent(Industrial Property Rights)] 超音波音源および超音波センサ (2006)
  • Inventor(s): 越田信義・椿健治
  • Industrial Property Rights Holder: 農工大ティー・エル・オー
  • Acquisition Date: 2006-09-12
  • Description: 「研究成果報告書概要(和文)」より
• [Patent(Industrial Property Rights)] 音波発生装置とその製造方法 (2006)
  • Inventor(s): 越田信義・椿健治
  • Industrial Property Rights Holder: 農工大ティー・エル・オー
  • Acquisition Date: 2006-07-25
  • Description: 「研究成果報告書概要(和文)」より
• [Patent(Industrial Property Rights)] 熱誘起圧力波発生装置 (2006)
  • Inventor(s): 篠田裕之・越田信義・浅村直也
  • Industrial Property Rights Holder: 科学技術振興機構
  • Acquisition Date: 2006-04-18
  • Description: 「研究成果報告書概要(和文)」より
• [Patent(Industrial Property Rights)] 電子源電極およびそれを用いた装置 (2006)
  • Inventor(s): 越田信義, 太田敢行
  • Industrial Property Rights Holder: 東京農工大学
  • Industrial Property Number: 2006-281866
  • Filing Date: 2006-10-16