Highly-functional hybrid silicon single-electron devices inccoporating nanoelectromechanical structures

• Project/Area Number: 18310097
• Research Category: Grant-in-Aid for Scientific Research (B)
• Allocation Type: Single-year Grants
• Section: 一般
• Research Field: Microdevices/Nanodevices
• Research Institution: Tokyo Institute of Technology
• Principal Investigator: MIZUTA Hiroshi Tokyo Institute of Technology, Graduate School of Engineering, Visiting Professor (90372458)
• Co-Investigator(Kenkyū-buntansha): ODA Shunri Tokyo Institute of Technology, Quantum Nanoelectronics Research Center, Professor (50126314)
• Project Period (FY): 2006 – 2007
• Project Status: Completed (Fiscal Year 2007)
• Budget Amount: ¥17,810,000 (Direct Cost: ¥15,500,000、Indirect Cost: ¥2,310,000); Fiscal Year 2007: ¥10,010,000 (Direct Cost: ¥7,700,000、Indirect Cost: ¥2,310,000); Fiscal Year 2006: ¥7,800,000 (Direct Cost: ¥7,800,000)
• Keywords: NEMS / suspended gate / nanoscale MOSFET / single-electron transisto / silicon nanobridge / hybrid simulation / 3D FEM simulation / equivalent circuit model

Research Abstract

Co-integration of silicon-based nanoelectromechanical systems (NEMSs) and single-electron transistors (SETs) was investigated for developing novel functional nanodevcies beyond the conventional MOSFETs and SETs. Hybrid NEMS-MOS-SET simulation technology was first developed by combining three-dimensional mechanical, electrostatic and transport simulation. Based on the numerical results, novel SET-NEMS analytical models were developed and integrated into conventional SPICE circuit simulator. By using these simulation technologies, two device concepts were explored : one which features a mechanically movable gate integrated into SETs (SET-NEMS) and another in which the SET channel itself works as NEMS (NEMSET). For the former structure, we fabricated suspended-gate structures on the silicon-on-insulator (SOD substrates and demonstrated that a rapid 'pull-in' motion of the suspended-gate enables to switch the period of Coulomb oscillation and this may be utilized for signal encoding in the periodicity realizing the offset charge independent SET logic. For the latter structure, we successfully fabricated silicon nanobridge transistors with a suspended quantum dot and demonstrated clear Coulomb blockade characteristics superior to the conventional SETs. In addition, we observed at temperatures<4.2K that Coulomb current peaks disappear for a finite range of source-to-drain voltage, which is attributable to a new type of blockade of single-electron tunneling caused by cavity phonons confined in the suspended quantum dot.

Research Products

• [Journal Article] Impact of key circuit parameters on signal-to-noise ratio characteristics for the radio-frequency single electron transistors (2008)
  • Author(s): M. Manoharan, B. Pruvost, H. Mizuta and S. Oda
  • Journal Title: IEEE Trans. on Nanotechnology (In Press)
  • Description: 「研究成果報告書概要(和文)」より
  • Peer Reviewed
• [Journal Article] Strongly-coupled multiple-dot characteristics in dual recess structured silicon channel (2008)
  • Author(s): M. Manoharan, Y. Kawata, Y. Tsuchiya, S. Oda and H. Mizuta
  • Journal Title: Journal of Applied Physics (In Press)
  • Description: 「研究成果報告書概要(和文)」より
  • Peer Reviewed
• [Journal Article] Stochastic Coulomb blockade in couple asymmetric silicon dots formed by pattern-dependent oxidation (2008)
  • Author(s): M. Manoharan, Y. Tsuchiya, S. Oda and H. Mizuta
  • Journal Title: Applied Physics Letters (In Press)
  • Description: 「研究成果報告書概要(和文)」より
  • Peer Reviewed
• [Journal Article] Control of electrostatic coupling observed for silicon double quantum dot structures (2008)
  • Author(s): G. Yamahata, Y. Tsuchiya, S. Oda, Z. A. K. Durrani and H. Mizuta,
  • Journal Title: Japanese Jouranal of Applied Physics (In Press)
  • NAID: 40016111036
  • Description: 「研究成果報告書概要(和文)」より
  • Peer Reviewed
• [Journal Article] Room temperature single electron charging in single silicon nanochains (2008)
  • Author(s): M. A. Rafiq, Z. A. K. Durrani, H. Mizuta, A. Colli, P. Servati, A. C. Ferrari, W. I. Milne and S. Oda
  • Journal Title: Journal of Applied Physics 103
  • Description: 「研究成果報告書概要(和文)」より
  • Peer Reviewed
• [Journal Article] Single-electron tunnelling via quantum dot cavities built on a silicon suspension nanobridge (2008)
  • Author(s): J. Ogi, Y. Tsuchiya, S. Oda and H. Mizuta
  • Journal Title: Microelectronic Engineering (In Press)
  • Description: 「研究成果報告書概要(和文)」より
  • Peer Reviewed
• [Journal Article] Bottom-up approach to silicon nanoelectronics(Invited paper) (2008)
  • Author(s): H. Mizuta and S. Oda
  • Journal Title: Microelectronic Journal 39 Pages: 171-176
  • Description: 「研究成果報告書概要(和文)」より
  • Peer Reviewed
• [Journal Article] Electron transport in nanocrystalline silicon", Device Applications of Silicon Nanocrystals and Nanostructures (2008)
  • Author(s): H. Mizuta, S. Oda, S. Uno, N. Mori and N. Koshida
  • Journal Title: Springer (In Press)
  • Description: 「研究成果報告書概要(和文)」より
  • Peer Reviewed
• [Journal Article] Impact of key circuit parameters on signal-to-noise ratio characteristics for the radio-frequency single electron transistors (2008)
  • Author(s): M., Manoharan, B., Pruvost, H., Mizuta, S., Oda
  • Journal Title: IEEE Trans. Nanotechnology (Digital Object Identifier 10.1109/TNANO.2007.915020) (in press)
  • Description: 「研究成果報告書概要(欧文)」より
• [Journal Article] Strongly-coupled multiple-dot characteristics in dual recess structured silicon channe (2008)
  • Author(s): M., Manoharan, Y., Kawata, Y., Tsuchiya, S., Oda, H., Mizuta
  • Journal Title: J. Appl. Phys (in press)
  • Description: 「研究成果報告書概要(欧文)」より
• [Journal Article] Stochastic Coulomb blockade in coupled asymmetric silicon dots formed by pattern-dependent oxidation (2008)
  • Author(s): M., Manoharan, Y., Tsuchiya, S., Oda, H., Mizuta
  • Journal Title: Appl. Phys. Lett (in press)
  • Description: 「研究成果報告書概要(欧文)」より
• [Journal Article] Bottom-up approach to silicon nanoelectronics (Invited paper) (2008)
  • Author(s): H., Mizuta, S., Oda
  • Journal Title: Microelectronics Journal 39 Pages: 171-176
  • Description: 「研究成果報告書概要(欧文)」より
• [Journal Article] Single-electron tunnelling via quantum dot cavities built on a silicon suspension nanobridge (2008)
  • Author(s): J., Ogi, Y., Tsuchiya, S., Oda, H., Mizuta
  • Journal Title: Microelectronics Eng
  • Description: 「研究成果報告書概要(欧文)」より
• [Journal Article] Control of electrostatic coupling observed for silicon double quantum dot structures (2008)
  • Author(s): G., Yamahata, Y., Tsuchiya, S., Oda, Z.A.K., Durrani, H., Mizuta
  • Journal Title: Jpn. J. Appl. Phys (in press)
  • NAID: 40016111036
  • Description: 「研究成果報告書概要(欧文)」より
• [Journal Article] Room temperature single electron charging in single silicon nanochains (2008)
  • Author(s): M.A., Rafiq, Z. A., K., Durrani, H., Mizuta, A., Colli, P., Servati, A. C., Ferrari, W., I. Milne, S., Oda
  • Journal Title: J. Appl. Phys 103,053705
  • Description: 「研究成果報告書概要(欧文)」より
• [Journal Article] "Electron transport in nanocrystalline silicon", Device Applications of Silicon Nanocrystals and Nanostructures (2008)
  • Author(s): H., Mizuta, S., Oda, S., Uno, N., Mori, N., Koshida
  • Journal Title: in press Springer (in press)
  • Description: 「研究成果報告書概要(欧文)」より
• [Journal Article] Hybrid silicon nanotechnologies for advanced information processing (Invited Talk) (2008)
  • Author(s): H., Mizuta, Y., Tsuchiya, S., Oda
  • Journal Title: Int. Conf. on Nano and Microelectronics (ICONAME2008), Pondicherry 3
  • Description: 「研究成果報告書概要(欧文)」より
• [Journal Article] Impact of key circuit parameters on signal-to-noise ratio characteristics for the radio-frequency single electron transistors (2008)
  • Author(s): M. Manoharan, B. Pruvost, H. Mizuta and S. Oda
  • Journal Title: IEEE Trans. on Nanotechnology (Inpress)
  • Peer Reviewed
• [Journal Article] Strongly-coupled multiple-dot characteristics in dual recess structuredsilicon channel (2008)
  • Author(s): M. Manoharan, Y. Kawata, Y. Tsuchiya, S. Oda and H. Mizuta
  • Journal Title: Journal of Applied Physics (Inpress)
  • Peer Reviewed
• [Journal Article] Stochastic Coulomb blockade in coupled asymmetric silicon dots formedby pattern-dependent oxidation (2008)
  • Author(s): M. Manoharan, Y. Tsuchiya, S. Oda and H. Mizuta
  • Journal Title: Applied Physics Letters (Inpress)
  • Peer Reviewed
• [Journal Article] Control of electrostatic coupling observed for silicon double quantum dotstructures (2008)
  • Author(s): G. Yamahata, Y. Tsuchiya, S. Oda, Z. A. K. Durrani and H.Mizuta,
  • Journal Title: Japanese Journal of Applied Physics (Inpress)
  • NAID: 40016111036
  • Peer Reviewed
• [Journal Article] Single-electron tunnelling via quantum dot cavities built on a siliconsuspension nanobridge (2008)
  • Author(s): J. Ogi, Y. Tsuchiya, S. Oda and H. Mizuta
  • Journal Title: Microelectronic Engineering (Inpress)
  • Peer Reviewed
• [Journal Article] Design and Analysis of Functional NEMS-gate MOSFETs and SETs (2007)
  • Author(s): B. Pruvost, H. Mizuta, S. Oda
  • Journal Title: IEEE Trans. on Nanotechnology 6 Pages: 51-56
  • Description: 「研究成果報告書概要(和文)」より
  • Peer Reviewed
• [Journal Article] Three-dimensional numerical analysis of switching properties of high-speed and non-volatile nanoelectromechanical memory (2007)
  • Author(s): T. Nagami, H. Mizuta, N. Momo, Y. Tsuchiya, S. Saito, T. Arai, T. Shimada, and S. Oda
  • Journal Title: IEEE Trans. on Electron Devices 54 Pages: 1132-1139
  • Description: 「研究成果報告書概要(和文)」より
  • Peer Reviewed
• [Journal Article] Design and Analysis of Functional NEMS-gate MOSFETs and SETs (2007)
  • Author(s): B., Pruvost, H., Mizuta, S., Oda
  • Journal Title: IEEE Trans. on Nanotechnology 6 Pages: 51-56
  • Description: 「研究成果報告書概要(欧文)」より
• [Journal Article] Three-dimensional numerical analysis of switching properties of high-speed and non-volatile nanoelectromechanical memory (2007)
  • Author(s): T., Nagami, H., Mizuta, N., Momo, Y., Tsuchiya, S., Saito, T., Arai, T., Shimada, Oda
  • Journal Title: IEEE Trans. on Electron Devices ED-54 No.5 Pages: 1132-1139
  • Description: 「研究成果報告書概要(欧文)」より
• [Journal Article] Physics and applications of Si-based nanoelectro mechanical information devices (Keynote Lecture) (2007)
  • Author(s): H., Mizuta, S., Oda
  • Journal Title: 3th Int. Conf. on Advanced Materials and Nanotechnology (AMN-3)" Wellington, 16
  • Description: 「研究成果報告書概要(欧文)」より
• [Journal Article] Voltage-limitation-free compact SET model incorporating the effect of spin-degenerate discrete energy states (2007)
  • Author(s): B., Pruvost, H., Mizuta, S., Oda
  • Journal Title: IEEE Silicon Nanoelectronics Workshop, Kyoto 11
  • Description: 「研究成果報告書概要(欧文)」より
• [Journal Article] Ab-initio simulation of phonon properties of ultra-thin silicon films (2007)
  • Author(s): S., Sawai, H., Mizuta, S., Higashijima, S., Uno, M., Okamoto, Y., Tsuchiya, S., Oda
  • Journal Title: bit. Symp. on Frontiers in Computational Science of Nanoscale Transport, Tokyo, R Tune
  • Description: 「研究成果報告書概要(欧文)」より
• [Journal Article] NEMS-based memory devices (Invited Talk) (2007)
  • Author(s): H., Mizuta
  • Journal Title: hit. Workshop on "Emerging non volatile memories, Munich 14
  • Description: 「研究成果報告書概要(欧文)」より
• [Journal Article] Functional silicon nanoelectromechanical information processing devices (Invited Talk) (2007)
  • Author(s): H., Mizuta
  • Journal Title: Frontier Process Workshop 2007, Tsukuba 18
  • Description: 「研究成果報告書概要(欧文)」より
• [Journal Article] Single-electron tunnelling via quantum dot cavities built on a silicon suspension nanobridge (2007)
  • Author(s): J., Ogi, Y., Tsuchiya, S., Oda, H., Mizuta
  • Journal Title: 33rd Int. Conf. on Micro- and Nani-Engineering (MNE2007), Copenhagen 25
  • Description: 「研究成果報告書概要(欧文)」より
• [Journal Article] Phonon properties of ultra thin silicon films (2007)
  • Author(s): S., Sawai, S., Uno, M., Okamoto, Y., Tsuchiya, S., Oda, H., Mizuta
  • Journal Title: 2nd Workshop on ab initio Phonon Calculations, Cracow 7
  • Description: 「研究成果報告書概要(欧文)」より
• [Journal Article] Three-dimensional numerical analysis of switching properties of high-speed and non-volatile nanoelectromechanical memory (2007)
  • Author(s): T.Nagami, H.Mizuta, N.Momo, Y.Tsuchiya, S.Saito, T.Arai, T.Shinada, S.Oda
  • Journal Title: IEEE Trans on Electron Devices Vol.54.No.5(in press)
• [Journal Article] Design and Analysisi of Functional NEMS-gate MOSFETs and SETs (2007)
  • Author(s): B.Pruvost, H.Mizuta, S.Oda
  • Journal Title: IEEE Trans on Nanotechnology Vol.6.No.2 Pages: 218-224
• [Journal Article] Nano-electro-mechanical nonvolatile memory device incorporating nanocrystalline Si dots (2006)
  • Author(s): Y. Tsuchiya, K. Takai, N. Momo, T. Nagami, S. Yamaguchi, T. Shimada, H. Mizuta and S. Oda
  • Journal Title: J. Appl. Phys. 100
  • Description: 「研究成果報告書概要(和文)」より
  • Peer Reviewed
• [Journal Article] Identifying Single-Electron Charging Islands in a two-dimensional network of nanocrystalline Silicon Grains using Coulomb Oscillation Fingerprints (2006)
  • Author(s): M. A. H. Khalafalla, H. Mizuta and Z. A. K. Durrani
  • Journal Title: Phys. Rev. B 74
  • Description: 「研究成果報告書概要(和文)」より
  • Peer Reviewed
• [Journal Article] Nanoelectromechanical nonvolatile memory device incorporating nanocrystalline Si dots (2006)
  • Author(s): Y., Tsuchiya, K., Takai, N., Momo, T., Nagami, S., Yamaguchi, T., Shimoda, H., Mizuta, S., Oda
  • Journal Title: J. Appl. Phys 100 Pages: 94306-94306
  • Description: 「研究成果報告書概要(欧文)」より
• [Journal Article] Identifying single-electron charging islands in a two-dimensional network of nanocrystalline silicon grains using Coulomb oscillation fingerprints (2006)
  • Author(s): M., Khalafallah, H., Mizuta, Z.A.K., Durrani
  • Journal Title: Phys. Rev B74 Pages: 35316-35316
  • Description: 「研究成果報告書概要(欧文)」より
• [Journal Article] Silicon nanoelectromechanical information devices-Present and future-(Invited Talk) (2006)
  • Author(s): H., Mizuta, S., Oda
  • Journal Title: International Topical Workshop "Tera- and Nano-Devices : Physics and Modeling", Aizu-Wakamatsu
  • Description: 「研究成果報告書概要(欧文)」より
• [Journal Article] Top-down and bottom-up approaches towards silicon nanoelectronics (Invited Talk) (2006)
  • Author(s): H., Mizuta, S., Oda
  • Journal Title: Conf. on Optoelectronic and Microelectronic Materials and Devices (COMMAD06) Perth,8
  • Description: 「研究成果報告書概要(欧文)」より
• [Journal Article] Bottom-up Approach to Silicon Nanoelectronics (Invited Paper) (2006)
  • Author(s): H.Mizuta, S.Oda
  • Journal Title: Microelectronics Journal (in press)
• [Journal Article] Identifying Single-Electron Charging Islands in a two-dimensional network of nanocrystalline Silicon Grains using Coulomb Oscillation Fingerprints (2006)
  • Author(s): M.A.H.Khalafalla, H.Mizuta, Z.A.K.Durrani
  • Journal Title: Phys. Rev. B Vol.74
• [Journal Article] Nano-electro-mechanical nonvolatile memory device incorporating nanocrystalline Si dots, (2006)
  • Author(s): Y.Tsuchiya, K.Takai, N.Momo, T.Nagai, S.Yamaguchi, T.Shimada, H.Mizuta, S.Oda
  • Journal Title: J. Appl. Phys. Vol.100
• [Journal Article] ナノエレクトロメカニカル構造を有するシリコンナノ機能デバイス (2006)
  • Author(s): 水田 博, 永見 佑, B.Pruvost, 小木 純, 百々 信幸, 松田 真之助, 柴村 純平, 土屋 良重, 斎藤 慎一, 新井 唯, 木村 嘉伸, 嶋田 壽一, 小田 俊理
  • Journal Title: 応用物理学会シリコンテクノロジー分科会誌 No,85 Pages: 51-56
• [Presentation] Hybrid silicon nanotechnologies for advanced information processing(Invited Talk) (2008)
  • Author(s): H. Mizuta, Y. Tsuchiya and S. Oda
  • Organizer: International Conference on Nano and Micro electronics(ICONAME2008)
  • Place of Presentation: Pondicherry
  • Year and Date: 2008-01-03
  • Description: 「研究成果報告書概要(和文)」より
• [Presentation] Hybrid silicon nanotechnologies for advanced information processing (Invited Talk) (2008)
  • Author(s): H., Mizuta, Y., Tsuchiya, S., Oda
  • Organizer: Int. Conf. on Nano and Microelectronics (ICONAME2008)
  • Place of Presentation: Pondicherry
  • Year and Date: 2008-01-03
  • Description: 「研究成果報告書概要(欧文)」より
• [Presentation] Hybrid silicon nanotechnologies for advanced informationprocessing(Invited Talk) (2008)
  • Author(s): H. Mizuta, Y. Tsuchiya and S. Oda
  • Organizer: International Conference on Nano and Micro electronics(ICONAME2008)
  • Place of Presentation: Pondicherry
• [Presentation] Phonon properties of ultra thin silicon films (2007)
  • Author(s): S. Sawai, S. Uno, M. Okamoto, Y. Tsuchiya, S. Oda and H. Mizuta
  • Organizer: 2nd Workshop on ab initio Phonon Calculations
  • Place of Presentation: Cracow
  • Year and Date: 2007-12-07
  • Description: 「研究成果報告書概要(和文)」より
• [Presentation] Single-electron tunnelling via quantum dot cavities built on a silicon suspension nanobridge (2007)
  • Author(s): J. Ogi, Y. Tsuchiya, S. Oda and H. Mizuta
  • Organizer: 33rd International Conference on Micro-and Nano-Engineering(MNE2007)
  • Place of Presentation: Copenhagen
  • Year and Date: 2007-09-25
  • Description: 「研究成果報告書概要(和文)」より
• [Presentation] Single-electron tunnelling via quantum dot cavities built on a silicon suspension nanobridge (2007)
  • Author(s): J., Ogi, Y., Tsuchiya, S., Oda, H., Mizuta
  • Organizer: 33rd hit. Conf. on Micro- and Nani-Engineering (MNE2007)
  • Place of Presentation: Copenhagen
  • Year and Date: 2007-09-25
  • Description: 「研究成果報告書概要(欧文)」より
• [Presentation] NEMS-based memory devices(Invited Talk) (2007)
  • Author(s): H. Mizuta
  • Organizer: ESSDERC International Workshop on "Emergingnon volatile memories
  • Place of Presentation: Munich
  • Year and Date: 2007-09-14
  • Description: 「研究成果報告書概要(和文)」より
• [Presentation] NEMS-based memory devices (Invited Talk) (2007)
  • Author(s): H., Mizuta
  • Organizer: Int. Workshop on "Emerging non volatile memories
  • Place of Presentation: Munich
  • Year and Date: 2007-09-14
  • Description: 「研究成果報告書概要(欧文)」より
• [Presentation] NEMS-based memory devices(Invited Talk) (2007)
  • Author(s): H. Mizuta
  • Organizer: ESSDERC International Workshop on"Emergingnon volatile memories
  • Place of Presentation: Munich
  • Year and Date: 2007-09-14
• [Presentation] Functional Silicon nanoelectromechanical information processing devices(Invited Talk) (2007)
  • Author(s): H. Mizuta
  • Organizer: Frontier Process Workshop 2007
  • Place of Presentation: Tsukuba
  • Year and Date: 2007-08-18
  • Description: 「研究成果報告書概要(和文)」より
• [Presentation] Functional silicon nanoelectromechanical information processing devices (Invited Talk) (2007)
  • Author(s): H., Mizuta
  • Organizer: Frontier Process Workshop 2007
  • Place of Presentation: Tsukuba
  • Year and Date: 2007-08-18
  • Description: 「研究成果報告書概要(欧文)」より
• [Presentation] Voltage-limitation-free compact SET model incorporating the effect of spin-degenerate discrete energy states (2007)
  • Author(s): B. Pruvost, H. Mizuta and S. Oda
  • Organizer: IEEE Silicon Nanoelectronics Workshop
  • Place of Presentation: Kyoto
  • Year and Date: 2007-06-11
  • Description: 「研究成果報告書概要(和文)」より
• [Presentation] Ab-initio simulation of phonon properties of ultra-thin silicon films (2007)
  • Author(s): S. Sawai, H. Mizuta, S. Higashi jima, S. Uno, M. Okamoto, Y. Tsuchiya, and S. Oda
  • Organizer: Int. Symp. on Frontiers in Computational Science of Nanoscale Transport
  • Place of Presentation: Tokyo
  • Year and Date: 2007-06-08
  • Description: 「研究成果報告書概要(和文)」より
• [Presentation] Ab-initio simulation of phon on properties of ultra-thin silicon films (2007)
  • Author(s): S., Sawai, H., Mizuta, S., Higashijima, S., Uno, M., Okamoto, Y., Tsuchiya, S., Oda
  • Organizer: Int. Symp. on Frontiers in Computational Science of Nanoscale Transport
  • Place of Presentation: Tokyo
  • Year and Date: 2007-06-08
  • Description: 「研究成果報告書概要(欧文)」より
• [Presentation] Physics and applications of Si-based nanoelectromechanical information devices(Keynote Lecture) (2007)
  • Author(s): H. Mizuta and S. Oda
  • Organizer: 3rd International Conference on Advanced Materials and Nanotechnology(AMN-3)
  • Place of Presentation: Wellington
  • Year and Date: 2007-02-16
  • Description: 「研究成果報告書概要(和文)」より
• [Presentation] Physics and applications of Si-based nanoelectro mechanical information devices (Keynote Lecture) (2007)
  • Author(s): H., Mizuta, S., Oda
  • Organizer: 3th hit. Conf. on Advanced Materials and Nanotechnology (AMN-3)
  • Place of Presentation: Wellington
  • Year and Date: 2007-02-16
  • Description: 「研究成果報告書概要(欧文)」より
• [Presentation] Ab-initio simulation of phonon properties of ltra-thin siliconfilms (2007)
  • Author(s): S. Sawai, H. Mizuta, S. Higashijima, S. Uno, M. Okamoto, Y. Tsuchiya, and S. Oda
  • Organizer: IEEE Silicon Nanoelectronics Workshop
  • Place of Presentation: Kyoto
• [Presentation] Functional silicon nanoelectromechanical information processing devices(Invited Talk) (2007)
  • Author(s): H. Mizuta
  • Organizer: Frontier Process Workshop 2007
  • Place of Presentation: Tsukuba
• [Presentation] AB-initio simulation of phonon properties of ultra-thin siliconfilm (2007)
  • Author(s): S. Sawai, H. Mizuta, S. Higashijima, S. Uno, M. Okamoto, Y. Tsuchiya, and S. Oda
  • Organizer: Frontiers in Computational Science of Nanoscale Transport(FCSNT2007)
  • Place of Presentation: Tokyo
• [Presentation] Single-electron tunnelling via quantum dot cavities built on asilicon suspension nanobridge (2007)
  • Author(s): J. Ogi, Y. Tsuchiya, S. Oda and H. Mizuta
  • Organizer: 33rd International Conference on Micro-and Nano-Engineering(MNE2007)
  • Place of Presentation: Copenhagen
• [Presentation] Top-down and bottom-up approaches towards silicon nanoelectronics (Invited Talk) (2006)
  • Author(s): H. Mizuta and S. Oda
  • Organizer: Conference on Optoelectronic and Microelectronic Materials and Devices(COMMAD06)
  • Place of Presentation: Perth
  • Year and Date: 2006-12-08
  • Description: 「研究成果報告書概要(和文)」より
• [Presentation] Top-down and bottom-up approaches towards silicon nanoelectronics (Invited Talk) (2006)
  • Author(s): H., Mizuta, S., Oda
  • Organizer: Conf. on Optoelectronic and Microelectronic Materials and Devices (COMMAD06)
  • Place of Presentation: Perth
  • Year and Date: 2006-12-08
  • Description: 「研究成果報告書概要(欧文)」より
• [Presentation] Silicon nanoelectromechanical information devices-Present and future-(Invited Talk) (2006)
  • Author(s): H. Mizuta and S. Oda
  • Organizer: International Topical Workshop "Tera-and Nano-Devices: Physics and Modeling"
  • Place of Presentation: Aizu-wakamatsu
  • Year and Date: 2006-10-17
  • Description: 「研究成果報告書概要(和文)」より
• [Presentation] Silicon nanoelectromechanical information devices -Present and future- (Invited Talk) (2006)
  • Author(s): H., Mizuta, S., Oda
  • Organizer: International Topical Workshop "Tera- and Nana-Devices : Physics and Modeling" (Aizu-Wakamatsu)
  • Year and Date: 2006-10-17
  • Description: 「研究成果報告書概要(欧文)」より
• [Presentation] Fabrication and characterization of nanoscale suspended floating gates for NEMS memory (2006)
  • Author(s): N. Momo, T. Nagami, S. Matsuda, Y. Tsuchiya, S. Saito, T. Arai, Y. Kimura, T. Shimada, H. Mizuta and S. Oda
  • Organizer: IEEE Silicon Nanoelectronics Workshop
  • Place of Presentation: Honolulu
  • Year and Date: 2006-06-12
  • Description: 「研究成果報告書概要(和文)」より
• [Presentation] Electro-mechanical simulation of programming/readout characteristics for NEMS memory (2006)
  • Author(s): T. Nagami, N. Momo, Y. Tsuchiya, S. Saito, T. Arai, T. Shimada, H. Mizuta and S. Oda
  • Organizer: IEEE Silicon Nanoelectronics Workshop
  • Place of Presentation: Honolulu
  • Year and Date: 2006-06-12
  • Description: 「研究成果報告書概要(和文)」より
• [Presentation] Fabrication and evaluation of Si nanobridge transistors (2006)
  • Author(s): J. Ogi, N. Momo, M. A. H. Khalafalla, Y. Tsuchiya, H. Mizuta and S. Oda
  • Organizer: IEEE Silicon Nanoelectronics Workshop
  • Place of Presentation: Honolulu
  • Year and Date: 2006-06-12
  • Description: 「研究成果報告書概要(和文)」より
• [Presentation] Design and analysis of functional NEMS-gate MOSFETs and SETs (2006)
  • Author(s): B. Pruvost, H. Mizuta and S. Oda
  • Organizer: IEEE Silicon Nanoelectronics Workshop
  • Place of Presentation: Honolulu
  • Year and Date: 2006-06-12
  • Description: 「研究成果報告書概要(和文)」より
• [Presentation] Fabrication and characterization of nanoscale susnended floating gates for NEMS memory (2006)
  • Author(s): N. Momo, T. Nagami, S. Matsuda, Y. Tsuchiya, S. Saito, T. Arai, Y. Kimura, T. Shimada, H. Mizuta and S. Oda
  • Organizer: IEEE Silicon Nanoelectronics Workshop
  • Place of Presentation: Honolulu
  • Year and Date: 2006-06-12
  • Description: 「研究成果報告書概要(欧文)」より
• [Presentation] Electro-mechanical simulation of programming / readout characteristics for NEMS memory (2006)
  • Author(s): T. Nagami, N. Momo, Y. Tsuchiya, S. Saito, T. Arai, T. Shimada, H. Mizuta and S. Oda
  • Organizer: IEEE Silicon Nanoelectronics Workshop
  • Place of Presentation: Honolulu
  • Year and Date: 2006-06-12
  • Description: 「研究成果報告書概要(欧文)」より
• [Presentation] Fabrication and evaluation of Si nanobridge transistor (2006)
  • Author(s): J. Ogi, N. Momo, M.A.H. Khalafalla, Y. Tsuchiya, H. Mizuta and S. Oda
  • Organizer: IEEE Silicon Nanoelectronics Workshop
  • Place of Presentation: Honolulu
  • Year and Date: 2006-06-12
  • Description: 「研究成果報告書概要(欧文)」より
• [Book] Silicon Nanoelectronics : Ballistic transport in sillcon nanostructures (2006)
  • Author(s): H.Mizuta, K.Nishiguchi, S.Oda
  • Total Pages: 27
  • Publisher: Taylor＆Francis, CRC Press