Fabrication of novel nano devices and nano materials by a single molecule manipulation

• Project/Area Number: 18340104
• Research Category: Grant-in-Aid for Scientific Research (B)
• Allocation Type: Single-year Grants
• Section: 一般
• Research Field: Condensed matter physics II
• Research Institution: Okayama University
• Principal Investigator: KUBOZONO Yoshihiro Okayama University, 大学院・自然科学研究科, 教授 (80221935)
• Project Period (FY): 2006 – 2008
• Project Status: Completed (Fiscal Year 2008)
• Budget Amount: ¥16,490,000 (Direct Cost: ¥14,300,000、Indirect Cost: ¥2,190,000); Fiscal Year 2008: ¥3,770,000 (Direct Cost: ¥2,900,000、Indirect Cost: ¥870,000); Fiscal Year 2007: ¥5,720,000 (Direct Cost: ¥4,400,000、Indirect Cost: ¥1,320,000); Fiscal Year 2006: ¥7,000,000 (Direct Cost: ¥7,000,000)
• Keywords: 分子性固体・有機導体 / 表面・界面 / 半導体 / 走査トンネル顕微鏡 / 電界効果トランジスタ / ナノ構造 / ナノデバイス / pn接合 / 分子スケール空隙 / 単一分子操作 / フラーレン / 有機分子自己組織化膜 / STM / STS / 界面 / ナノ化学反応 / ポリマーリング / キャリア伝搬 / 単一分子素子 / 輸送特性

Research Abstract

C60やC70を始めとするフラーレンや炭素系物質のナノメータスケールでの構造・物性研究ならびにデバイス開発研究を行った. C60とC70の最密表面を形成して局所電界印加による分子空隙の形成, 分子空隙の移動, さらには電界印加ポリマー化反応に成功し, 多様なナノ物質合成に成功した. さらに, フラーレンや炭素系物質を使った電界効果トランジスタを作製し, デバイス特性をナノスケールで制御して, 様々な機能性を付与した

Research Products

• [Journal Article] Trap states and transport characteristics in picene thin film field-effecttransistor (2009)
  • Author(s): N. Kawasaki, Y. Kubozono, H. Okamoto, A. Fujiwara, M. Yamaji
  • Journal Title: Appl. Phys. Lett. 94
  • NAID: 120001063224
  • Peer Reviewed
• [Journal Article] High performance C60 and picene field-effect transistors withconducting polymer electrodes in bottomcontact structure (2009)
  • Author(s): Y. Kaji, N. Kawasaki, X. Lee, H. Okamoto, T. Kambe, N. Ikeda, A. Fujiwra, M. Yamaji, K.Omote, Y. Kubozono
  • Journal Title: Organic Electronics 10 Pages: 432-436
  • Peer Reviewed
• [Journal Article] C_<70> close-packed surface and single moleculevoid-formation by local electric field through ascanning tunneling microscope tipAppl (2009)
  • Author(s): Y. Ohta, R. Mitsuhashi, R. Nouchi, A. Fujiwara, S. Hino, Y. Kubozono
  • Journal Title: Phys. Lett. 94
  • Peer Reviewed
• [Journal Article] C70 close-packed surfaces and single molecule void-formation by local electric field-through a scanning tunnling microscope tip (2009)
  • Author(s): Y. Ohta, R. Mitsuhashi, R. Nouchi, A. Fujiwara, S. Hino, Y. Kubozono
  • Journal Title: Applied Physics Letters 94
  • Peer Reviewed
• [Journal Article] Trap states and tranport characteristcs in picene thin film field-effect transistor (2009)
  • Author(s): N. Kawasaki, Y. Kubozono, H. Okamoto, A. Fujiwara, M. Yamaji
  • Journal Title: Applied Physics Letters 94
  • Peer Reviewed
• [Journal Article] An investigation of correlation between transport characteristicsand trap states in n-channel organic field-effecttransistors Appl (2008)
  • Author(s): N. Kawasaki, Y. Ohta, Y. Kubozono, A. Konishi, A. Fujiwara
  • Journal Title: Phys. Lett. 92
  • Peer Reviewed
• [Journal Article] Transport properties in C_<60> field-effect transistor with asingle Schottky barrier (2008)
  • Author(s): Y. Ohta, Y. Kubozono, A. Fujiwara
  • Journal Title: Appl. Phys. Lett. 92
  • Peer Reviewed
• [Journal Article] Air-assisted high-performance field-effect transistor with thin films of picene (2008)
  • Author(s): H. Okamoto, N. Kawasaki, Y. Kaji, Y. Kubozono, A. Fujiwara, M. Yamaji
  • Journal Title: J. Am. Chem. Soc 130 Pages: 10470-10471
  • Peer Reviewed
• [Journal Article] Batlogg, High-performance C_<60>thin film field-effecttransistors with parylene gate insulator (2008)
  • Author(s): Y. Kubozono, S. Haas, W. L. Kalb, P. Joris, F. Meng, A. Fujiwara, B.
  • Journal Title: Appl. Phys. Lett 93
  • Peer Reviewed
• [Journal Article] Potential barriers to electron carriers in C_<60> field-effect transistors (2008)
  • Author(s): A. Konishi, E. Shikoh, Y. Kubozono, A. Fujiwara
  • Journal Title: Appl. Phys. Lett. 92 Pages: 173302-173302
  • NAID: 120000861338
  • Peer Reviewed
• [Journal Article] The 4d-4f dipole resonance of Pr atom in an endohedral metallofullerenes (2008)
  • Author(s): H. Katayanagi, B. P. Kalfe, J. Kou, T. Mori, K. Mitsuke, Y. Takabayashi, E. Kuwahara, Y.Kubozono
  • Journal Title: Pr@C_<82>, J. Qunt. Spect. Rad. Trans 109 Pages: 1590-1590
  • Peer Reviewed
• [Journal Article] Air-assisted high-performance field-eefct transistor with thin films of picene (2008)
  • Author(s): H. Okamoto, N. Kawasaki, Y. Kaji, Y. Kubozono, A. Fujiwara, M. Yamaji
  • Journal Title: Journal of the American Chemical Society 130 Pages: 10470-10471
  • Peer Reviewed
• [Journal Article] Output properties of C_<60> field-effect transistors with different source/drain electrodes (2007)
  • Author(s): N. Takahashi, A. Maeda, K. Uno, E. Shikoh, Y. Yamamoto, H. Hori, Y. Kubozono, A. Fujiwara
  • Journal Title: Appl. Phys. Lett. 90
  • Peer Reviewed
• [Journal Article] Output properties of C_<60> field-effect transistors with Au electrodesmodified by 1-alkanethiols (2007)
  • Author(s): T. Nagano, M. Tsutsui, R. Nouchi, N. Kawasaki, Y. Ohta, Y. Kubozono, N. Takahashi,and A. Fujiwara
  • Journal Title: J. Phys. Chem. C. 111 Pages: 7211-7217
  • Peer Reviewed
• [Journal Article] Relative partial cross sections for single, double and triple photoionization of C_<60> andC_<70> (2007)
  • Author(s): K. Mitsuke, H. Katayanagi, B. P. Kafle, C. Huang, H. Yagi, M. S. I. Prodhan, Y. Kubozono
  • Journal Title: J. Phys. Chem. A. 111 Pages: 8336-8343
  • Peer Reviewed
• [Journal Article] Hole-injection barrier in pentacene field-effect transistor with Au electrodesmodified by C_<16>H_<33>SH (2007)
  • Author(s): N. Kawasaki, Y. Ohta, Y. Kubozono, and A. Fujiwara
  • Journal Title: Appl. Phys. Lett 91
  • Peer Reviewed
• [Journal Article] Transport properties of field-effect transistors with thinfilms of C_<76> and its electronic structure (2007)
  • Author(s): H. Sugiyama, T. Nagano, R. Nouchi, N. Kawasaki, Y. Ohta, K. Imai, M. Tsutsui, Y.Kubozono, and A. Fujiwara
  • Journal Title: Chem. Phys. Lett. 449 Pages: 160-164
  • Peer Reviewed
• [Journal Article] Transport properties of field-effect transistor with Langmuir-Blodgettfilms of C_<60> dendrimer and estimation ofimpurity levels (2007)
  • Author(s): N. Kawasaki, T. Nagano, Y. Kubozono, Y. Sako, Y. Morimoto, Y. Takaguchi, A. Fujiwara,C.-C. Chu, T. Imae
  • Journal Title: Appl. Phys. Lett. 91
  • Peer Reviewed
• [Journal Article] Output properties of C60 field-effect transistors with Au electrodes modified by 1-alkanethiols (2007)
  • Author(s): T. Nagano, M. Tsutsui, R. Nouchi, N. Kawasaki, Y. Ohta, Y, Kubozono, N. Takahashi, A. Fujiwara
  • Journal Title: Journal of Physical Chemistry C 111 Pages: 7211-7217
  • Peer Reviewed
• [Journal Article] Hole-injection barrier in pentacene field-effect transistor with Au electrodes modified by C16H33SH (2007)
  • Author(s): N. Kawasaki, Y. Ohta, Y. Kubozono, and A. Fujiwara
  • Journal Title: Applied Physics Letters 92
  • Peer Reviewed
• [Journal Article] Transport properties of field-effect transistor with Langmuir-Blodgett films of C60 dendrimer and estimation of impurity levels (2007)
  • Author(s): N. Kawasaki, T. Nagano, Y Kubozono, S. Sako. Y. Morimoto, Y. Takaguchi, A. Fujiwara
  • Journal Title: Applied Physics Ltters 91
  • Peer Reviewed
• [Journal Article] Output properties of C60 field-effect transistors with different source/drain electrodes (2007)
  • Author(s): N.Takahashi, A.Maeda, K.Uno, E.Shikoh, Y.Yamamoto, H.Hori, Y.Kubozono, A.Fujiwara
  • Journal Title: Applied Physics Letters 90
• [Journal Article] Ring of C_<60> polymers formed by electron or hole injection from ascanning tunneling microscope tip (2006)
  • Author(s): R. Nouchi, K. Masunari, T. Ohta, Y. Kubozono, and Y. Iwasa
  • Journal Title: Phys. Rev. Lett. 97
  • Peer Reviewed
• [Journal Article] Improvements in the device characteristics of random-networksingle-walled carbon nanotube transistors byusing high-k gate insulators (2006)
  • Author(s): M. Ohishi, K. Ochi, Y. Kubozono, H. Kataura, and M. Shiraishi
  • Journal Title: Appl. Phys. Lett. 89
  • Peer Reviewed
• [Journal Article] Output properties of C_<60> field-effect transistor device with Eu source/drainelectrodes (2006)
  • Author(s): K. Ochi, T. Nagano, T. Ohta, R. Nouchi, Y. Kubozono, Y. Matsuoka, E. Shikoh, A.Fujiwara
  • Journal Title: Appl. Phys. Lett. 89
  • Peer Reviewed
• [Journal Article] Variation of output properties of perylene field-effect transistors by work function ofsource/drain electrodes (2006)
  • Author(s): T. Ohta, T. Nagano, K. Ochi, Y. Kubozono, E. Shikoh, and A. Fujiwara
  • Journal Title: Appl. Phys. Lett. 89
  • Peer Reviewed
• [Journal Article] Fabrication of field-effect transistor devices with fullerodendron bysolution process (2006)
  • Author(s): H. Kusai, T. Nagano, K. Imai, Y. Kubozono, Y. Sako, T. Takaguchi, A. Fujiwara, N. Akima, Y.Iwasa, and S. Hino
  • Journal Title: Appl. Phys. Lett. 88
  • Peer Reviewed
• [Journal Article] Field-effect transistors with thin films of perylene on SiO_<2> and polyimide gateinsulators (2006)
  • Author(s): T. Ohta, T. Nagano, K. Ochi, Y Kubozono, and A. Fujiwara
  • Journal Title: Appl. Phys. Lett 88
  • NAID: 120000861398
  • Peer Reviewed
• [Journal Article] Nanoscale patterning by manipulation of single C_<60> molecules with scanning tunnelingmicroscope (2006)
  • Author(s): S. Fujiki, K. Masunari, R. Nouchi, H. Sugiyama, *Y. Kubozono, and A. Fujiwara
  • Journal Title: Chem. Phys. Lett. 420 Pages: 82-85
  • Peer Reviewed
• [Journal Article] Fabrication of field-effect transistor devices with fullerodendron by solution process (2006)
  • Author(s): H.Kusai, T.Nagano, K.Imai, Y.Kubozono, Y.Sakoh, Y.Takaguchi, A.Fujiwara, N.Akima, Y.Iwasa, S.Hino
  • Journal Title: Applied Physics Letters 88
• [Journal Article] Variation of output properties of perylene field-effect transistors by work function of source/drain electrodes (2006)
  • Author(s): T.Ohta, T.Nagano, K.Ochi, Y.Kubozono, E.Shikoh, A.Fujiwara
  • Journal Title: Applied Physics Letters 89
• [Journal Article] Output properties of C60 field-effect transistor device with Eu source/drain electrodes (2006)
  • Author(s): K.Ochi, T.Nagano, T.Ohta, R.Nouchi, Y.Kubozono, Y.Matsuoka, E.Shikoh, A.Fujiwara
  • Journal Title: Applied Physics Letters 89
  • NAID: 120002307075
• [Journal Article] Ring of C60 polymers formed by electron or hole injection from a scanning tunneling microscope tip (2006)
  • Author(s): R.Nouchi, K.Masunari, T.Ohta, Y.Kubozono, Y.Iwasa
  • Journal Title: Physical Review Letters 97
• [Journal Article] Improvements in the device characteristics of random-network single-walled carbon nanotube transistors by using high-k gate insulators (2006)
  • Author(s): M.Ohishi, M.Shiraishi, K.Ochi, Y.Kubozono, H.Kataura
  • Journal Title: Applied Physics Letters 89
• [Presentation] Physical properties of fullerene materials found by chemical doping andfield-effect doping (2008)
  • Author(s): Y. Kubozono
  • Organizer: International Workshop on Superconductivity in Diamond andRelated Materials(IWSDRM)2008
  • Place of Presentation: Tsukuba, Japan
• [Presentation] Characteristics and Trap states of field-effect transistor with thin films of 'old' aromatic hydrocarbon picene (2008)
  • Author(s): Y. Kubozono
  • Organizer: International symposium on organic transistors and functional interface
  • Place of Presentation: Iwanuma, Japan
• [Presentation] Physical Properties of fullerene materials found by chemical doping and field-effect doping (2008)
  • Author(s): Yoshihiro Kubozono
  • Organizer: International Workshop on Superconductivity in Diamond and Related Materials, (IWSDRM)2008
  • Place of Presentation: つくば市
• [Presentation] Application of fullerene molecules toward nanoscale materials (2007)
  • Author(s): Yoshihiro Kubozono
  • Organizer: Japan-Taiwan Bilateral Science & Technology Interchange Project(招待講演)
  • Place of Presentation: 箱根
  • Year and Date: 2007-07-19
• [Presentation] 電極表面を有機自己組織化膜で覆うことにより形成されるキャリア注入障壁の定量評価 (2007)
  • Author(s): 久保園芳博
  • Organizer: 東北大学金属材料研究所研究会
  • Place of Presentation: 仙台
• [Presentation] Application of fullerene molecules towards nanoscale materials (2007)
  • Author(s): Y. Kubozono
  • Organizer: Japan-Taiwan Bilateral Science& Technology Project
  • Place of Presentation: Hakone
• [Presentation] Carrier injection barriers and impurity levels in organic thin filmfield-effect transistors (2007)
  • Author(s): Y. Kubozono
  • Organizer: Alpine workshop on organic FET
  • Place of Presentation: Braunwald, Switzerland
• [Presentation] フラーレン系電界効果デバイスの動作特性と動作制御 (2006)
  • Author(s): 久保園芳
  • Organizer: 日本物理学会領域7シンポジウム
  • Place of Presentation: 松山
  • Year and Date: 2006-03-30
• [Presentation] フラーレンの単一分子操作による新規なナノ材料開発 (2006)
  • Author(s): 久保園芳博
  • Organizer: 日本化学会第86 春季年会・アドバンストテクノロジープログラム
  • Place of Presentation: 船橋
• [Presentation] フラーレンの単一分子操作によるナノパターンニング (2006)
  • Author(s): 久保園芳博
  • Organizer: 第31回フラーレン・ナノチューブ総合シンポジウム
  • Place of Presentation: 津
• [Book] 固体物理 (2008)
  • Author(s): 久保園芳博
  • Total Pages: 9
  • Publisher: 走査トンネル顕微鏡によるフラーレンナノマニピュレーション
• [Book] STM探針からのキャリア注入によるC60のポリマー・モノマー化に関する研究 (2008)
  • Author(s): 久保園芳博
  • Total Pages: 6
  • Publisher: 固体物理43巻1号 (アグネ技術センター)
• [Book] 未来材料 (2006)
  • Author(s): 岩佐義宏, 久保園芳博
  • Publisher: フラーレン材料の電界効果トランジスタへの応用と展望
• [Remarks]
  • URL: http://interfa.rlss.okayama-u.ac.jp/
• [Remarks]
  • URL: http://interfa.rlss.okayama-u.ac.jp/Japanese/kubozono/ronbun.html
• [Patent(Industrial Property Rights)] 有機物超伝導体及びその製造方法 (2009)
  • Inventor(s): 久保園芳博, 神戸高志, 岡本秀毅, 池田直
  • Industrial Property Rights Holder: 岡大学, 国内特許出願
  • Filing Date: 2009-03-25
• [Patent(Industrial Property Rights)] ピセン化合物の製造方法およびピセン化合物の結晶体 (2008)
  • Inventor(s): 岡本秀毅, 久保園芳博, 山路稔, 郷田慎
  • Industrial Property Rights Holder: 岡山大学, 群馬大学, (株)ナード研究所, 国内特許出願
  • Filing Date: 2008-12-22
• [Patent(Industrial Property Rights)] ガスセンサー (2008)
  • Inventor(s): 笠間康彦, 表研次, 横尾邦義, 久保園芳博, 岡本秀毅, 川崎菜穂子
  • Industrial Property Rights Holder: (株)イデアルスター, 岡山大学, 国内特許出願
  • Filing Date: 2008-07-10
• [Patent(Industrial Property Rights)] ガスセンサー (2008)
  • Inventor(s): 久保園芳博, 他
  • Industrial Property Rights Holder: 岡山大学等
  • Filing Date: 2008-07-10
• [Patent(Industrial Property Rights)] 電界効果半導体素子およびその作製方法 (2006)
  • Inventor(s): 白石誠司, 大石恵, 久保園芳博
  • Industrial Property Rights Holder: 大阪大学, 岡山大学, 国内特許出願
  • Filing Date: 2006-09-13
• [Patent(Industrial Property Rights)] カーボンナノチューブ電界効果トランジスタ及びその製造方法 (2006)
  • Inventor(s): 白石誠司, 大石恵, 久保園芳博
  • Industrial Property Rights Holder: 大阪大学, 岡山大学
  • Filing Date: 2006-09-13