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Clarification and the control of growth mode in bulk GaN crystal growth by ammonothermal method

Research Project

Project/Area Number 18360004
Research Category

Grant-in-Aid for Scientific Research (B)

Allocation TypeSingle-year Grants
Section一般
Research Field Applied materials science/Crystal engineering
Research InstitutionTohoku University

Principal Investigator

KAGAMITANI Yuji (2008)  Tohoku University, 多元物質科学研究所, 寄附研究部門教員 (40396536)

EHRENTRAUT DIRK (2006-2007)  Tohoku University, 多元物質科学研究所, 寄附研究部門教員 (50396537)

Co-Investigator(Kenkyū-buntansha) 福田 承生  東北大学, 名誉教授 (30199236)
鏡谷 勇二  東北大学, 多元物質科学研究所, 教育研究支援者 (40396536)
吉川 彰  東北大学, 多元物質科学研究所, 助教授 (50292264)
荻野 拓  東北大学, 多元物質科学研究所, 助手 (70359545)
Co-Investigator(Renkei-kenkyūsha) FUKUDA Tsuguo  東北大学, 原子分子材料科学高等研究機構, 連携教授 (30199236)
Research Collaborator DIRK Ehrentraut  東北大学, 原子分子材料科学高等研究機構, 准教授 (50396537)
YOSHIKAWA Akira  東北大学, 多元物質科学研究所, 准教授 (50292264)
OGINO Hiraku  東京大学, 大学院・工学系研究科, 助教 (70359545)
Project Period (FY) 2006 – 2008
Project Status Completed (Fiscal Year 2008)
Budget Amount *help
¥17,490,000 (Direct Cost: ¥15,000,000、Indirect Cost: ¥2,490,000)
Fiscal Year 2008: ¥5,070,000 (Direct Cost: ¥3,900,000、Indirect Cost: ¥1,170,000)
Fiscal Year 2007: ¥5,720,000 (Direct Cost: ¥4,400,000、Indirect Cost: ¥1,320,000)
Fiscal Year 2006: ¥6,700,000 (Direct Cost: ¥6,700,000)
Keywords結晶成長 / 結晶工学 / 環境材料 / 省エネルギー / 高性能レーザー / 窒化物半導体
Research Abstract

アモノサーマル法によるGaN結晶作製を行い、GaNにおいても水熱合成法で実績のあるZnOと同じように結晶成長方位の制御が可能であることを見出した。また、30日間の長期育成にも成功し、透明なGaN作製に成功した。育成速度の高速化には、アンモニアのクラッキング状態が大きく影響することを明らかにし、アンモニア合成・分解触媒のタングステンを加えることで、最大で育成速度が28倍向上した。

Report

(4 results)
  • 2008 Annual Research Report   Final Research Report ( PDF )
  • 2007 Annual Research Report
  • 2006 Annual Research Report
  • Research Products

    (70 results)

All 2009 2008 2007 2006 Other

All Journal Article (13 results) (of which Peer Reviewed: 10 results) Presentation (52 results) Book (4 results) Remarks (1 results)

  • [Journal Article] Ammonothermal synthesis of thick gallium nitride film employing acidic mineralizers2008

    • Author(s)
      D. Ehrentraut, K. Kagamitani, A. Yoshikawa, N. oshino, H. Itoh, S. Kawabata, K. Fujii, T. Yao,and T. Fukuda
    • Journal Title

      J.Mater.Sci. 43

      Pages: 2270-2275

    • Related Report
      2008 Final Research Report
    • Peer Reviewed
  • [Journal Article] Physico-chemical features of the acidic ammonothermal growth of GaN2008

    • Author(s)
      D. Ehrentraut, K. Kagamitani, C. Yokoyama, T. Fukuda
    • Journal Title

      J.Cryst.Growth 310

      Pages: 891-895

    • Related Report
      2008 Final Research Report
    • Peer Reviewed
  • [Journal Article] Reviewing recent developments in the acid ammonothermal crystal growth of gallium nitride2008

    • Author(s)
      Dirk Ehrentraut
    • Journal Title

      J. Crvst. Growth 310

      Pages: 3902-3906

    • Related Report
      2008 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Physico-chemical features of the acidic ammonothermal growth of GaN2008

    • Author(s)
      D. Ehrentraut
    • Journal Title

      J. Cryst. Growth 310

      Pages: 891-895

    • Related Report
      2007 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Ammonothermal synthesis of thick gallium nitride film employing acidic mineralizers2008

    • Author(s)
      D. Ehrentraut
    • Journal Title

      J. Mater. Sci. 43

      Pages: 2270-2275

    • Related Report
      2007 Annual Research Report
    • Peer Reviewed
  • [Journal Article] State-of-the-art and prospective for mass-producband gap semiconductor crystals ZnO and GaN by solvothermal technology2007

    • Author(s)
      D. Ehrentraut
    • Journal Title

      日本結晶成長学会誌 Vol.34 No.1

      Pages: 3-10

    • Related Report
      2008 Final Research Report
  • [Journal Article] Prospects for the ammonothermal growth of large GaN crystal2007

    • Author(s)
      T. Fukuda and D. Ehrentraut
    • Journal Title

      J.Cryst.Growth 305,304-310

      Pages: 59-65

    • Related Report
      2008 Final Research Report
    • Peer Reviewed
  • [Journal Article] Temperature effect of ammonium halogenides as mineralizers onphase stability of gallium nitride synthesized under acidic ammonothermal conditions2007

    • Author(s)
      D. Ehrentraut, N. Hoshino, Y. Kagamitani, A. oshikawa, T.Fukuda, H. Itoh and S. Kawabata
    • Journal Title

      J.Mater.Chem. 17(9),886-893

      Pages: 51-58

    • Related Report
      2008 Final Research Report
    • Peer Reviewed
  • [Journal Article] Temperature effect of ammonium halogenides as mineralizer on phase stability of gallium nitride synthesized under acidic ammonothermal conditions2007

    • Author(s)
      D. Ehrentraut
    • Journal Title

      J. Mater. Chem. 17

      Pages: 51-58

    • Related Report
      2007 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Prospect for the ammonothermal growth of large GaN crystal2007

    • Author(s)
      T. Fukuda
    • Journal Title

      J. Cryst. Growth 305

      Pages: 59-65

    • Related Report
      2007 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Ammonothermal epitaxy of thick GaN film using NH_4Cl mineralizer2006

    • Author(s)
      Y. Kagamitani, D. Ehrentraut, A. Yoshikawa, N. Hoshino, T. Fukuda, S. Kawabata and K. Inaba
    • Journal Title

      Jpn.J.Appl.Phys Part 1 45(5A)

      Pages: 4018-4020

    • Related Report
      2008 Final Research Report
    • Peer Reviewed
  • [Journal Article] Temperature effect of ammonium halogenides as mineralizers on phase stability of gallium nitride synthesized under acidic ammonothermal conditions.2006

    • Author(s)
      D.Ehrentrau
    • Journal Title

      J. Mater. Chem 17,(9)

      Pages: 886-893

    • Related Report
      2006 Annual Research Report
  • [Journal Article] Prospects for the ammonothermal growth of large GnN crystal

    • Author(s)
      T.Fukuda
    • Journal Title

      Journal of Crystal Growth (印刷中)

    • Related Report
      2006 Annual Research Report
  • [Presentation] アクティブアモノサーマル法によるGaN単結晶作製2009

    • Author(s)
      鏡谷勇二
    • Organizer
      東北大学多元物質科学研究所窒化物ナノ・エレクトロニクス材料研究センター講演会
    • Place of Presentation
      仙台
    • Year and Date
      2009-10-30
    • Related Report
      2008 Final Research Report
  • [Presentation] アモノサーマル法における炉内温度差が原料搬送に及ぼす影響2009

    • Author(s)
      鏡谷勇二
    • Organizer
      第54回応用物理学関係連合講演会
    • Place of Presentation
      つくば(日本)
    • Year and Date
      2009-03-31
    • Related Report
      2008 Annual Research Report
  • [Presentation] アモノサーマル法における炉内温度差が原料搬送に及ぼす影響2009

    • Author(s)
      鏡谷勇二
    • Organizer
      第56回応用物理学関係連合講演会
    • Place of Presentation
      茨城県つくば市
    • Related Report
      2008 Final Research Report
  • [Presentation] アクティブアモノサーマル法によるGaNバルク結晶作製2009

    • Author(s)
      鏡谷勇二
    • Organizer
      日本学術振興会第161・162委員会合同研究会「デバイスに求められるワイドギャップ半導体のバルク・エピ成長技術」
    • Place of Presentation
      三重県鳥羽市
    • Related Report
      2008 Final Research Report
  • [Presentation] アクティブアモノサーマル法によるGaNバルク結晶作製2009

    • Author(s)
      鏡谷勇二
    • Organizer
      日本学術振興会第161・162委員会合同研究会「デバイスに求められるワイドギャップ半導体のバルク・エビ成長技術」
    • Place of Presentation
      鳥羽(日本)
    • Related Report
      2008 Annual Research Report
  • [Presentation] 酸性鉱化剤を用いたアモノサーマル法による高品質GaN結晶育成2008

    • Author(s)
      鏡谷勇二
    • Organizer
      応用物理学会結晶工学分科会2008年・年末講演会,宝石から学ぶ結晶工学と若手ポスター発表会
    • Place of Presentation
      東京目白
    • Year and Date
      2008-12-11
    • Related Report
      2008 Final Research Report
  • [Presentation] アクティブアモノサーマル法によるGaN単結晶作製2008

    • Author(s)
      鏡谷勇二
    • Organizer
      東北大学多元物質科学研究所窒化物ナノ・エレクトロニクス材料研究センター講演会
    • Place of Presentation
      仙台(日本)
    • Year and Date
      2008-10-30
    • Related Report
      2008 Annual Research Report
  • [Presentation] Progress toward the ammonothermal growth of true bulk GaN2008

    • Author(s)
      D. Ehrentraut
    • Organizer
      日本学術振興会161委員会第57回研究会/161委員会第59回研究会
    • Place of Presentation
      東京(日本)
    • Year and Date
      2008-03-14
    • Related Report
      2007 Annual Research Report
  • [Presentation] 安熱合成法によるGaN結晶へのドーピング結晶中の不純物制御2008

    • Author(s)
      鏡谷勇二
    • Organizer
      第69回応用物理学会学術講演会
    • Place of Presentation
      愛知県春日井
    • Related Report
      2008 Final Research Report
  • [Presentation] Ammonothermal Growth of GaN on Non-polr Plane under Acidic Conditions2008

    • Author(s)
      Y. Kagamitani
    • Organizer
      Second Internati onal Symposium on Growth of III-Nitrides
    • Place of Presentation
      Izu,Japan
    • Related Report
      2008 Final Research Report
  • [Presentation] High quality GaN growth by the ammonothermal method with acidic mineralizer2008

    • Author(s)
      鏡谷勇二
    • Organizer
      応用物理学会2008春季学術講演会
    • Place of Presentation
      千葉
    • Related Report
      2008 Final Research Report
  • [Presentation] Growth of GaN nonpolar-planes by the Ammonothermal Method with Acidic Mineralizer2008

    • Author(s)
      Y. Kagamitani
    • Organizer
      The 4th Asian Conference on Crystal Growth and Crystal Technology
    • Place of Presentation
      仙台(日本)
    • Related Report
      2008 Annual Research Report
  • [Presentation] Ammonothermal Growth of GaN on Non-polar Plane under Acidic Conditions2008

    • Author(s)
      Y. Kagamitani
    • Organizer
      Second International Symposium on Growth of III-Nitrides
    • Place of Presentation
      伊豆(日本)
    • Related Report
      2008 Annual Research Report
  • [Presentation] 安熱合成法によるGaN結晶へのドーピング結晶中の不純物制御2008

    • Author(s)
      鏡谷勇二
    • Organizer
      第69回応用物理学会学術講演会
    • Place of Presentation
      春日井(日本)
    • Related Report
      2008 Annual Research Report
  • [Presentation] 安熱合成法による高品質GaN結晶作製(2)2008

    • Author(s)
      鏡谷勇二
    • Organizer
      第55回応用物理学関係連合後援会(2008年春季)
    • Place of Presentation
      千葉(日本)
    • Related Report
      2007 Annual Research Report
  • [Presentation] GaN growth by the ammonothermal method with acidic mineralizer2007

    • Author(s)
      Y. Kagamitani
    • Organizer
      第2回日本フラックス成長研究発表会
    • Place of Presentation
      仙台
    • Year and Date
      2007-12-14
    • Related Report
      2008 Final Research Report
  • [Presentation] 酸性鉱化剤を用いた安熱合成法によるGaN結晶作製2007

    • Author(s)
      鏡谷勇二
    • Organizer
      第2回日本フラックス成長研究発表会
    • Place of Presentation
      仙台(日本)
    • Year and Date
      2007-12-14
    • Related Report
      2007 Annual Research Report
  • [Presentation] Ammonothermal Growth of GaN on Polar and Nonpolar Seeds2007

    • Author(s)
      鏡谷勇二
    • Organizer
      第7回東北大学多元物質科学研究所研究発表会
    • Place of Presentation
      仙台
    • Year and Date
      2007-12-12
    • Related Report
      2008 Final Research Report
  • [Presentation] Growth of thick GaN by ammonothermal method using acidic mineralizer2007

    • Author(s)
      Y. Kagamitani
    • Organizer
      2007 International Conference on Crystal Technology and KACG Spring Meeting & 2^<nd> International Symposium for Nano and Advanced Materials
    • Place of Presentation
      Naju,KOREA
    • Year and Date
      2007-06-02
    • Related Report
      2008 Final Research Report
  • [Presentation] Prospects for the solvothermal growth of large ZnO and GaN crystals2007

    • Author(s)
      T. Fukuda
    • Organizer
      2007 international conference on Crystal technology and KACG spring meeting
    • Place of Presentation
      光州(韓国)
    • Year and Date
      2007-06-02
    • Related Report
      2007 Annual Research Report
  • [Presentation] 酸性鉱化剤を用いた安熱合成法による高品質GaN単結晶作製2007

    • Author(s)
      鏡谷勇二
    • Organizer
      日本結晶成長学会特別講演会・日本学術振興会161委員会第54回研究会
    • Place of Presentation
      東京
    • Year and Date
      2007-04-13
    • Related Report
      2008 Final Research Report
  • [Presentation] 酸性鉱化剤を用いた安熱合成法による高品質GaN単結晶作製2007

    • Author(s)
      鏡谷 勇二
    • Organizer
      日本結晶成長学会講演会・日本学術振興会161委員会第54回研究会
    • Place of Presentation
      東京(日本)
    • Year and Date
      2007-04-13
    • Related Report
      2007 Annual Research Report
  • [Presentation] Improved growth conditions for GaN by the acidic ammonothermal route2007

    • Author(s)
      D. Ehrentraut
    • Organizer
      ISCS 2007
    • Place of Presentation
      Kyoto,JAPAN
    • Related Report
      2008 Final Research Report
  • [Presentation] GaN growth on a- and m-plane by the ammonothermal methwith acidic mineralizer2007

    • Author(s)
      Y. Kagamitani
    • Organizer
      ISCS 2007
    • Place of Presentation
      Kyoto,JAPAN
    • Related Report
      2008 Final Research Report
  • [Presentation] Acidic ammonothermal growth of gallium nitride2007

    • Author(s)
      D. Ehrentraut
    • Organizer
      IUMRS-ICAM 2007
    • Place of Presentation
      Bangalore,INDIA
    • Related Report
      2008 Final Research Report
  • [Presentation] Ammonothermal growth of GaN2007

    • Author(s)
      D. Ehrentraut
    • Organizer
      IWBNS-5
    • Place of Presentation
      Salvador,BRAZIL
    • Related Report
      2008 Final Research Report
  • [Presentation] GaN grown by ammonothermal method2007

    • Author(s)
      Y. Kagamitani
    • Organizer
      応用物理学会2007秋季学術講演会
    • Place of Presentation
      札幌
    • Related Report
      2008 Final Research Report
  • [Presentation] Growth and characterization of gallder acidic ammonothermal conditions2007

    • Author(s)
      D. Ehrentraut
    • Organizer
      The 15^<th> International Conference on Crystal Growth, Poster session Wide Band Gap Bulk & Epitaxial Growth
    • Place of Presentation
      Salt Lake City,Utah,USA,Oral
    • Related Report
      2008 Final Research Report
  • [Presentation] Effect of temperature and mineralizer on phase stability of gallium nitride prepared under acidic ammonothermal conditions2007

    • Author(s)
      Y. Kagamitani
    • Organizer
      The 15^<th> International Conference on Crystal Growth, session Wide Band Gap Bulk & Epitaxial Growth
    • Place of Presentation
      Salt Lake City,Utah,USA
    • Related Report
      2008 Final Research Report
  • [Presentation] Effect of temperature and mineralizer on phase stability of gallium nitride prepared under acidic ammonothermal conditions2007

    • Author(s)
      D. Ehrentraut
    • Organizer
      The European Materials Research Society Spring Meeting
    • Place of Presentation
      Strasbourg,FRANCE
    • Related Report
      2008 Final Research Report
  • [Presentation] Ammonothermal growth of thick GaN films2007

    • Author(s)
      Y. Kagamitani
    • Organizer
      Poland-Japan-Germany Workshop
    • Place of Presentation
      Zakopane,POLAND
    • Related Report
      2008 Final Research Report
  • [Presentation] Effect of temperature and mineralizer on phase stability and solubility of gallium under acidic ammonothermal conditions2007

    • Author(s)
      D. Ehrentraut
    • Organizer
      Poland-Japan-Germany Workshop
    • Place of Presentation
      Zakopane,POLAND
    • Related Report
      2008 Final Research Report
  • [Presentation] 酸性鉱化剤を用いた安熱合成法によるGaNのa面及びm面成長2007

    • Author(s)
      鏡谷勇二
    • Organizer
      第54回応用物理学関係連合講演会(春季)
    • Place of Presentation
      神奈川県相模原市
    • Related Report
      2008 Final Research Report
  • [Presentation] Effect of temperature and mineralizer on phase stability and solubility of gallium under acidic ammonothermal conditions2007

    • Author(s)
      D. Ehtentraut
    • Organizer
      Poland-Japan-Germany Workshop
    • Place of Presentation
      ザコパネ(ポーランド)
    • Related Report
      2007 Annual Research Report
  • [Presentation] Ammonothermal growth of thick GaN films2007

    • Author(s)
      Y. Kagamitani
    • Organizer
      Poland-Japan-Germany Workshop
    • Place of Presentation
      ザコパネ(ポーランド)
    • Related Report
      2007 Annual Research Report
  • [Presentation] Effect of temperature and mineralizer on phase stability of gallium nitride prepared under acidic ammonothermal conditions2007

    • Author(s)
      D. Ehrentraut
    • Organizer
      E-MRS spring meeting
    • Place of Presentation
      ストラスブル(フランス)
    • Related Report
      2007 Annual Research Report
  • [Presentation] Effect of temperature and mineralizer on phase stability of gallium nitride prepared under acidic ammonothermal conditions2007

    • Author(s)
      Y. Kagamitani
    • Organizer
      15th International Conference on Crystal Growth
    • Place of Presentation
      ソルトレイクシティ(米国)
    • Related Report
      2007 Annual Research Report
  • [Presentation] Growth and characterization of gallium nitride grown under acidic ammonothermal conditions2007

    • Author(s)
      D. Ehrentraut
    • Organizer
      15th International Conference on Crystal Growth
    • Place of Presentation
      ソルトレイクシティ(米国)
    • Related Report
      2007 Annual Research Report
  • [Presentation] ソルボサーマル法によるZnO・GaNバルク結晶成長2007

    • Author(s)
      福田 承生
    • Organizer
      第68回応用物理学会学術講演会(2007年秋季)
    • Place of Presentation
      札幌(日本)
    • Related Report
      2007 Annual Research Report
  • [Presentation] 安熱合成法による高品質GaN結晶作製2007

    • Author(s)
      鏡谷勇二
    • Organizer
      第68回応用物理学会学術講演会(2007年秋季)
    • Place of Presentation
      札幌(日本)
    • Related Report
      2007 Annual Research Report
  • [Presentation] Ammonothermal growth of GaN2007

    • Author(s)
      D. Ehrentraut
    • Organizer
      IWBNS-5
    • Place of Presentation
      サルバドル(ブラジル)
    • Related Report
      2007 Annual Research Report
  • [Presentation] Growth of ZnO and GaN bulk Crystal Growth by Solvothermal Methoids2007

    • Author(s)
      T. Fukuda
    • Organizer
      1st China-Japan Crystal Growth & Technology Symposium
    • Place of Presentation
      青島(中国)
    • Related Report
      2007 Annual Research Report
  • [Presentation] Acidic ammonothermal growth of gallium nitride2007

    • Author(s)
      D. Ehrentraut
    • Organizer
      IUMRS-ICAM 2007
    • Place of Presentation
      バンガロール(インド)
    • Related Report
      2007 Annual Research Report
  • [Presentation] GaN growth on a-and m-plane by the ammonothermal method with acidic mineralizer2007

    • Author(s)
      Y. Kagamitani
    • Organizer
      ISCS 2007
    • Place of Presentation
      京都(日本)
    • Related Report
      2007 Annual Research Report
  • [Presentation] Improved growth condituionsfor GaN by the acidic ammonothermal route2007

    • Author(s)
      D. Ehrentraut
    • Organizer
      ISCS 2007
    • Place of Presentation
      京都(日本)
    • Related Report
      2007 Annual Research Report
  • [Presentation] Progress in the ammonothermal growth of GaN2007

    • Author(s)
      D. Ehrentraut
    • Organizer
      Korean Association of Crystal Growth Fall Meeting 2007
    • Place of Presentation
      ソウル(韓国)
    • Related Report
      2007 Annual Research Report
  • [Presentation] ソルボサーマル法による大型高品質ZnO及びGaNバルク結晶成長2007

    • Author(s)
      福田承生
    • Organizer
      第37回結晶成長国内会議(NCCG-37)
    • Place of Presentation
      札幌(日本)
    • Related Report
      2007 Annual Research Report
  • [Presentation] Ammonothermal Epit axy of Thick GaN Film Using NH_4Cl Mineralizer2006

    • Author(s)
      Y. Kagamitani
    • Organizer
      6^<th> Meeting of Institute of Multidisciplinary Research for Advanced Materials
    • Place of Presentation
      Sendai,JAPAN
    • Year and Date
      2006-12-08
    • Related Report
      2008 Final Research Report
  • [Presentation] Approach for high quality bulk GaN growth by the ammonothermal method2006

    • Author(s)
      Y. Kagamitani
    • Organizer
      6^<th> Meeting of Institute of Multidisciplinary Research for Advanced Materials
    • Place of Presentation
      Sendai, JAPAN
    • Year and Date
      2006-12-08
    • Related Report
      2008 Final Research Report
  • [Presentation] Optimizing growth conditions for gallium nitride unacidic ammonothermal conditions2006

    • Author(s)
      D. Ehrentraut
    • Organizer
      Materials Research Society Fall Meeting(MRS 2006)
    • Place of Presentation
      Boston, USA
    • Related Report
      2008 Final Research Report
  • [Presentation] Effect of Temperature and Mineralizer on Phase Stability of Gallium Nitride Prepared Under Acidic Ammonothermal Conditions2006

    • Author(s)
      D. Ehrentraut
    • Organizer
      International Workshop on Nitride Semiconductors 2006(IWN2006)
    • Place of Presentation
      Kyoto,JAPAN
    • Related Report
      2008 Final Research Report
  • [Presentation] Ammonothermal Homoepitaxy of Thick Gallium Nitride Films2006

    • Author(s)
      Y. Kagamitani
    • Organizer
      International Workshop on Nitride Semiconductors 2006(IWN2006)
    • Place of Presentation
      Kyoto,JAPAN
    • Related Report
      2008 Final Research Report
  • [Book] Electronic Joumal別冊2009化合物半導体技術大全2009

    • Author(s)
      福田承生
    • Total Pages
      3
    • Publisher
      Electronic Journal
    • Related Report
      2008 Annual Research Report
  • [Book] アモノサーマル法(安熱合成法)によるGaN単結晶作製2009

    • Author(s)
      鏡谷勇二
    • Publisher
      シーエムシー出版(In press)
    • Related Report
      2008 Annual Research Report
  • [Book] Electronic Journal別冊2009化合物半導体技術大全

    • Author(s)
      福田承生
    • Total Pages
      324
    • Publisher
      電子ジャーナル
    • Related Report
      2008 Final Research Report
  • [Book] アモノサーマル法(安熱合成法)によるGaN単結晶作製

    • Author(s)
      鏡谷勇二, 福田承生
    • Publisher
      シーエムシー出版(In press)
    • Related Report
      2008 Final Research Report
  • [Remarks]

    • URL

      http://www.tagen.tohoku.ac.jp/labo/ehrentraut/index-j.html

    • Related Report
      2007 Annual Research Report

URL: 

Published: 2006-04-01   Modified: 2021-04-07  

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