Study on light emitting diode for lighting controlling the luminous intensity distribution by nano-photonics structures

• Project/Area Number: 18360008
• Research Category: Grant-in-Aid for Scientific Research (B)
• Allocation Type: Single-year Grants
• Section: 一般
• Research Field: Applied materials science/Crystal engineering
• Research Institution: Mie University
• Principal Investigator: HIRAMATSU Kazumasa Mie University, 大学院・工学研究科, 教授 (50165205)
• Co-Investigator(Kenkyū-buntansha): MIYAKE Hideto 三重大学, 大学院・工学研究科, 准教授 (70209881) ; MOTOGAITO Atsushi 三重大学, 大学院・工学研究科, 助教 (00303751)
• Project Period (FY): 2006 – 2008
• Project Status: Completed (Fiscal Year 2008)
• Budget Amount: ¥14,290,000 (Direct Cost: ¥13,300,000、Indirect Cost: ¥990,000); Fiscal Year 2008: ¥2,210,000 (Direct Cost: ¥1,700,000、Indirect Cost: ¥510,000); Fiscal Year 2007: ¥2,080,000 (Direct Cost: ¥1,600,000、Indirect Cost: ¥480,000); Fiscal Year 2006: ¥10,000,000 (Direct Cost: ¥10,000,000)
• Keywords: 窒化物半導体 / 発光ダイオード / ナノ構造 / フォトニック結晶 / 配光制御 / LED照明 / MOVPE / a面 / HVPE / バルク単結晶 / 光学フィルム / 回折レンズ / 選択成長 / InGaN / A1GaN / 反射光モニタリング / 転位密度 / 電子線リソグラフィ / 渋紙 / 光取り出し効率

Research Abstract

本研究ではLEDが真に照明デバイスとして用いられるために必要な配光制御を検討し、照明に適したLEDの実現を目指す。その結果、選択成長技術を利用して、高品質なAlGaNエピタキシャル層やAlNバルク単結晶を得ることができ、高い発光効率を有する照明用LEDを作製するために必要な基板結晶を得るための見通しを得ることができた。また、LEDの取り出し効率の改善や配光制御を行うためにAlGaNのフォトニック結晶や光学フィルムを用いた回折レンズを作製し、これらの光学素子が照明用LEDの高性能化のために有効な技術であることを示した。

Research Products

• [Journal Article] Gro wth of crack-free AlGaN ons elective-area-growth GaN (2008)
  • Author(s): H. Miyake, N. Masuda, Y. Ogawahara, M. Narukawa, K. Hiramatsu et.al.
  • Journal Title: Journal of Crystal Growth 310 Pages: 4885-4887
  • Peer Reviewed
• [Journal Article] Reactor-pres sure dependence of growthof a-plane Ga N on r-plane sapphire (2008)
  • Author(s): R. Miyagawa, M. Narukawa, B. Ma, H. Miyake and K. Hiramatsu.
  • Journal Title: Journal of Crystal Growth 310 Pages: 4979-4982
  • Peer Reviewed
• [Journal Article] Improved optical properties of AlGaN using periodic structures (2008)
  • Author(s): H.Miyake, T.Ishii, A.Motogaito and K.Hiramatsu
  • Journal Title: Physica Status Solidi(c) 5 Pages: 1822-1824
  • Peer Reviewed
• [Journal Article] Improved surface morphology of flow-modulated MOVPE grown AlN on sapphire using thin medium-temperature AlN buffer layer (2008)
  • Author(s): D. Li, M. Aoki, H. Miyake and K. Hiramatsu
  • Journal Title: Physica Status Solidi(c) 5 Pages: 1818-1821
  • Peer Reviewed
• [Journal Article] Thermal analysis of GaN powder formation via reaction of gallium ethylenediamine tetraacetic acid complexes with ammonia (2008)
  • Author(s): Y. Liu, S. Koide, H. Miyake, K. Hiramatsu, et.al.
  • Journal Title: Physica Status Solidi(c) 5
  • Peer Reviewed
• [Journal Article] Optical characterization of Japanese papers for application in the LED lighting system with human sensitivity (2008)
  • Author(s): A.Motogaito, K.Manabe, Y.Yamanaka, N.Machida, H.Miyake and K.Hiramatsu
  • Journal Title: Journal of Light & Visual Environment 32 Pages: 218-221
  • NAID: 110006663916
  • Peer Reviewed
• [Journal Article] Selective area growth of III -nitride and their application for emitting devices (2008)
  • Author(s): K. Hiramatsu, H. Miyake and D. Li
  • Journal Title: Journal of Light & Visual Environment 32 Pages: 177-182
  • NAID: 110006663908
  • Peer Reviewed
• [Journal Article] Selective Area Growth of III-Nitride and Their Application for Emitting Devices (2008)
  • Author(s): K. Hiramatsu, H. Miyake, D. Li
  • Journal Title: Journal of Light & Visual Environment 32 Pages: 177-182
  • NAID: 110006663908
  • Peer Reviewed
• [Journal Article] Optical Characterization of Japanese Papers for Application in the LED Lighting System with Human Sensitivity (2008)
  • Author(s): A. Motogaito, K. Manabe, Y. Yamanaka, N. Machida, H. Miyake, K. Hiramatsu
  • Journal Title: Journal of Light & Visual Environment 32 Pages: 218-221
  • NAID: 110006663916
  • Peer Reviewed
• [Journal Article] Improved surface morphology of flow-modulated MOVPE grown AlN on sapphire using thin medium-temperature AlN buffer layer (2008)
  • Author(s): D. Li, M. Aoki, H. Miyake, K. Hiramatsu
  • Journal Title: Physica Status Solidi(c) 5 Pages: 1818-1821
  • Peer Reviewed
• [Journal Article] Improved optical properties of AlGaN using periodic structures (2008)
  • Author(s): H. Miyake, T. Ishii, A. Motogaito, K. Hiramatsu
  • Journal Title: Physica Status Solidi(c) 5 Pages: 1822-1824
  • Peer Reviewed
• [Journal Article] Thermal analys is of GaN powder formation via reaction of gallium ethylenediamine tetraacetic acid complexes with ammonia (2008)
  • Author(s): Y. Liu, S. Koide, H. Miyake, K. Hiramatsu, et al.
  • Journal Title: Physica Status Solidi(c) 5 Pages: 1522-1524
  • Peer Reviewed
• [Journal Article] Growth of crack-free AlGaN ons elective-area-growth GaN (2008)
  • Author(s): H. Miyake, N. Masuda, Y. Ogawahara, M. Narukawa, K. Hiramatsu, et al.
  • Journal Title: Journal of Crystal Growth 310 Pages: 4885-4887
  • Peer Reviewed
• [Journal Article] Reactor-pressure dependence of growthof a-plane GaN on r-plane sapphire (2008)
  • Author(s): R. Miyagawa, M. Narukawa, B. Ma, H. Miyake, K. Hiramatsu
  • Journal Title: Journal of Crystal Growth 310 Pages: 4979-4982
  • Peer Reviewed
• [Journal Article] Supression of crack generation using high-compressive-s train AlN/Sapphire template for hydride vapor phase epitaxy of thick AlN film (2007)
  • Author(s): K. Tsujisawa, S. Kishino, D. Li, H. Miya ke, K. Hiramatsu et.al.
  • Journal Title: Japanese Journal of Applied Physics 46
  • Peer Reviewed
• [Journal Article] Blue emission from InGaN/GaN hexagonal pyramid structures (2007)
  • Author(s): H. Miyake, K. Nakao and K. Hiramatsu
  • Journal Title: Superlattices and Microstructures 41 Pages: 341-346
  • Peer Reviewed
• [Journal Article] Structural and optical properties of Si-doped AlGaN/AlN multiple quantum wells grown by MOVPE (2007)
  • Author(s): D. Li, T. Katsuno, M. Aoki, H. Miyake, K. Hiramatsu et.al.
  • Journal Title: Physica Status Solidi(c) 4 Pages: 2494-2497
  • Peer Reviewed
• [Journal Article] Dependence of In mole fraction in InGaN on GaN facets (2007)
  • Author(s): K. Nakao, D. Li, Y. Liu, H. Miyake and K. Hiramatsu
  • Journal Title: Physica Status Solidi(c) 4 Pages: 2383-2386
  • Peer Reviewed
• [Journal Article] High temperaturegrowth of AlN film by LP-HVPE (2007)
  • Author(s): K.Tsujisawa, S.Kishino, Y.Liu, H.Miyake,K.Hiramatsu et.al.
  • Journal Title: Physica Status Solidi(c) 4 Pages: 2252-2255
  • Peer Reviewed
• [Journal Article] Influence of growth interruption and Si doping on the structural and optical properties of AlGaN/AlN multiple quantum wells (2007)
  • Author(s): D. Li, M. Aoki, T. Katsuno, H. Miyake, K.Hiramatsu and M. Tanaka
  • Journal Title: Journal of Crystal Growth 298 Pages: 500-503
  • Peer Reviewed
• [Journal Article] High temperature growth of AIN film by LP-HVPE (2007)
  • Author(s): K.Tsujisawa, S.Kishino, Y.H.Liu, H.Miyake, K.Hiramatsu, et. al.
  • Journal Title: Physica Status Solidi(c) 4 Pages: 2252-2255
  • Peer Reviewed
• [Journal Article] Synthesis of IIInitride microcrystals using metal-EDTA complexes (2007)
  • Author(s): Y.H.Liu, S.Koide, H.Miyake, K.Hiramatsu, et. al.
  • Journal Title: Physica Status Solidi(c) 4 Pages: 2346-2349
  • Peer Reviewed
• [Journal Article] Structural and optical properties of Si-doped AIGaN/AIN multiple quantum wells grown by MOVPE (2007)
  • Author(s): D.Li, T.Katsuno, M.Aoko, H.Miyake, K.Hiramatsu, et. al.
  • Journal Title: Physica Status Solidi(c) 4 Pages: 2494-2497
  • Peer Reviewed
• [Journal Article] Blue emission from InGaN/GaN hexagonal pyramid structures (2007)
  • Author(s): H.Miyake, K.Nakao andK.Hiramatsu
  • Journal Title: Superlattices and Microstructures 41 Pages: 341-346
  • Peer Reviewed
• [Journal Article] Supression of crack generation using high-compressivestrain AIN/Sapphire template for hydride vapor phase epitaxy of thick AIN film (2007)
  • Author(s): K.Tsujisawa, S.Kishino, D.Li, H.Miyake, K.Hiramatsu, et. al.
  • Journal Title: Japanese Journal of Applied Physics 46
  • Peer Reviewed
• [Journal Article] Selective area growth of III-nitride and their application for emitting devices (2007)
  • Author(s): K.Hiramatsu, H.Miyake and D.Li
  • Journal Title: Proc.1st International Confernce on White LEDs and Solid State Lighting Pages: 72-77
  • NAID: 110006663908
• [Journal Article] Optical characterization of Japanese papers for application to theLEDlightning system wit hhuman sensitivity (2007)
  • Author(s): A.Motogaito, K.Manabe, Y.Yamanaka, N.Machida, H.Miyake and K.Hiramatsu
  • Journal Title: Proc.1st International Confernce on White LEDsand Solid State Lighting Pages: 440-443
• [Journal Article] Influence of growth conditions on Al incorporation to Al_xGa_<1-x>N (x>0.4) grown by MOVPE (2007)
  • Author(s): D.Li, M.Aoki, T.Katsuno, H.Miyake, K.Hiramatsu, M.Tanaka
  • Journal Title: Journal of Crystal Growth 298 Pages: 372-374
• [Journal Article] Influence of growth interruption and Si doping on the structural and optical properties of AlGaN/AlN multiple quantum wells (2007)
  • Author(s): D.Li, M.Aoki, T.Katsuno, H.Miyake, K.Hiramatsu, M.Tanaka
  • Journal Title: Journal of Crystal Growth 298 Pages: 500-503
• [Journal Article] Fabrication of a Binary Diffractive Lens for Controlling the Luminous Intensity Distribution of LED Light
  • Author(s): A. Motogaito, N. Machida, T. Morikawa, K. Manabe, H. Miyake, K. Hiramatsu
  • Journal Title: Optical Review (掲載決定、印刷中)
  • NAID: 10025305178
  • Peer Reviewed
• [Journal Article] Low-Pressur e HVPE growth of crack free thick AlN on trench patterened AlN template
  • Author(s): Y. Katagiri, S. Kishino, K. Okuura, H. Miyake and K. Hiramatsu
  • Journal Title: Journal of Crystal Growth (掲載決定、印刷中)
  • Peer Reviewed
• [Journal Article] Structural and electrical properties of Si-doped a-pl ane GaN grown on r-plane sapphire by MOVPE
  • Author(s): B. Ma, R. Miyagawa, W. Hu, D. Li, H. Miyake and K. Hiramatsu
  • Journal Title: Journal of Crystal Growth (掲載決定、印刷中)
  • Peer Reviewed
• [Journal Article] Photoluminescence study of Si-doped a-plane GaN grown by MOVPE
  • Author(s): D. Li, B. Ma, R. Miyagawa, W. Hu, M. Narukawa, H. Miyake and K. Hiramatsu
  • Journal Title: Journal of Crystal Growth (掲載決定、印刷中)
  • Peer Reviewed
• [Journal Article] Optical pro perties of MOVPE-grown a-plane GaN a nd AlGaN
  • Author(s): M. Narukawa, R. Miyagawa, B. Ma, H. Miyake and K. Hiramatsu
  • Journal Title: Journal of Crystal Growth (掲載決定、印刷中)
  • Peer Reviewed
• [Journal Article] Growth of undoped and Zn-doped GaN nanowires
  • Author(s): M. Narukawa, S. Koide, H. Miyake and K. Hiramatsu
  • Journal Title: Journal of C rystal Growth (掲載決定、印刷中)
  • Peer Reviewed
• [Journal Article] Structural and optical properties of Si-doped AlGaN/AlN multiple quantum wells grown by MOVPE
  • Author(s): D.Li, T.Katsuno, M.Aoki, H.Miyake, K.Hiramatsu, T.Shibata
  • Journal Title: Physica Status Solidi (c) (掲載決定)
• [Journal Article] Dependence of In mole fraction in InGaN on GaN facets
  • Author(s): K.Nakao, D.Li, Y.Liu, H.Miyake, K.Hiramatsu
  • Journal Title: Physica Status Solidi (c) (掲載決定)
• [Journal Article] Synthesis of III-nitride microcrystals using Metal-EDTA complexes
  • Author(s): Y.Liu, H.Miyake, K.Hiramatsu, K.Nakamura, N.Nambu
  • Journal Title: Physica Status Solidi (c) (掲載決定)
• [Journal Article] High temperature growth of AlN film by LP-HVPE
  • Author(s): K.Tsujisawa, S.Kishino, Y.Liu, H.Miyake, K.Hiramatsu, T.Shibata, M.Tanaka
  • Journal Title: Physica Status Solidi (c) (掲載決定)
• [Presentation] Low-Pressure HVPE growth of thick AlN on trench patterned Sapphire substrate (2009)
  • Author(s): K. Okuura, Y. Katagiri, H. Miyake and K.Hiramatsu
  • Organizer: First International Symposium on Advanced Plasma Science and its Applications
  • Place of Presentation: 名古屋
  • Year and Date: 2009-03-10
• [Presentation] In situ monitoring on MOVPE growth of nitride semiconductors (2009)
  • Author(s): M. Narukawa, Y. Ogawahara, H. Miyake and K. Hiramatsu
  • Organizer: First International Symposium on Advanced Plasma Science and its Applications
  • Place of Presentation: 名古屋
  • Year and Date: 2009-03-10
• [Presentation] HVPE growth of AlN on trench patterned sapphire (2009)
  • Author(s): H. Miyake, Y. Katagiri, K. Okuura and K.Hiramatsu
  • Organizer: SPIE Photonic West
  • Place of Presentation: San Jose, USA
  • Year and Date: 2009-01-26
• [Presentation] HVPE growth of AlN on trench pat terned sapphire(招待講演) (2009)
  • Author(s): H. Miyake, Y. Katagiri, K. Okuura, K. Hiramatsu
  • Organizer: SPIE Photonic West
  • Place of Presentation: San Jose, CA, USA
  • Year and Date: 2009-01-26
• [Presentation] The effects of growth temperature on the properties of nonpolar a-plane AlN by LP-HVPE (2008)
  • Author(s): J. Wu, Y. Katagiri, K. Okuura, D. Li, H. Miyake and K. Hiramatsu
  • Organizer: International Workshop on Nitride Semiconductors 2008
  • Place of Presentation: Montreux, Switzerland
  • Year and Date: 2008-10-09
• [Presentation] HVPE Growth of Crack-free Thick AlN Using Strain-Contrkl Technique (2008)
  • Author(s): H. Miyake, Y. Katagiri, S. Kishino, K. Okuura, K. Hiramatsu
  • Organizer: International Workshop on Nitride Semiconductors 2008
  • Place of Presentation: Montreux, Swiss
  • Year and Date: 2008-10-08
• [Presentation] Fabrication of the binary blazed diffractive lens for controlling the luminous intensity distribution of LED light (2008)
  • Author(s): A. Motogaito, N. Machida, T. Morikawa, K. Manabe, H. Miyake and K. Hiramatsu
  • Organizer: 6th International Conference on Optics-photonics Design & Fabrication
  • Place of Presentation: Taipei, Taiwan
  • Year and Date: 2008-06-10
• [Presentation] Fabrication of the binary blazed diffractive lens for controlling the luminous intensity distribution of LED light (2008)
  • Author(s): A. Motogaito, N. Machida, T. Morikawa, K. Manabe, H. Miyake and K. Hiramatsu
  • Organizer: International Conference on Optics-photonics Design & Fabrication
  • Place of Presentation: Taipei, Taiwan
  • Year and Date: 2008-06-10
• [Presentation] Fabrication of the binary blazeddiffractiveeens for controling the luminous intensity distribution of LED light (2008)
  • Author(s): A. Motogaito, N. Machida, T. Morikawa, K. Manabe, H. Miyake, K. Hiramatsu
  • Organizer: 6th Internat ional Conference on Optics-photonics Design and Fabrication
  • Place of Presentation: Taipei, Taiwan
  • Year and Date: 2008-06-10
• [Presentation] Growth of crack-free AlGaN on selective area growth GaN (2008)
  • Author(s): H. Miyake, N. Masuda, Y. Ogawahara, M. Narukawa, K. Hiramatsu et.al.
  • Organizer: 14th International Conference on Metalorganic vapor phase epitaxy
  • Place of Presentation: Metz, France
  • Year and Date: 2008-06-04
• [Presentation] Growth of crack-free AlGaN on selective area growth GaN (2008)
  • Author(s): H. Miyake, N. Masuda, Y. Ogawahara, M. Narukawa, K. Hirama tsu, et al.
  • Organizer: 14th International Conference on Metal organic vapor phase epitaxy
  • Place of Presentation: Metz, France
  • Year and Date: 2008-06-04
• [Presentation] ファセット制御ELO法による窒化物半導体のエピタキシャル成長(招待講演) (2008)
  • Author(s): 三宅秀人, 平松和政
  • Organizer: 日本学術振興会マイクロビームアナリシス第141委員会
  • Place of Presentation: 三重大学
  • Year and Date: 2008-05-13
• [Presentation] Optical characterization of Japanese papers for application to the LED lighting system with human sensitivity (2007)
  • Author(s): A.Motogaito, K.Manabe, Y.Yamanaka, N.Machida, H.Miyake and K.Hiramatsu
  • Organizer: 1st International Conference on White LEDs and Solid State Lighting
  • Place of Presentation: 東京
  • Year and Date: 2007-11-29
• [Presentation] Selective area growth of III-nitride and their application for emitting Devices (2007)
  • Author(s): K. Hiramatsu, H. Miyake and D. Li
  • Organizer: 1st International Conference on White LEDs and Solid State Lighting
  • Place of Presentation: 東京(招待講演)
  • Year and Date: 2007-11-28
• [Presentation] Selective area growth of III-nitride and their application for emitting Devices(招待講演) (2007)
  • Author(s): K.Hiramatsu, H.Miyake and D.Li
  • Organizer: 1st International Conference on White LEDs andSolid State Lighting
  • Place of Presentation: 東京都港区
  • Year and Date: 2007-11-28
• [Presentation] HVPE法によるGaN・AIN成長の現状と課題(招待講演) (2007)
  • Author(s): 平松 和政, 劉 玉懐, 三宅 秀人
  • Organizer: 第68回応用物理学会学術講演会
  • Place of Presentation: 北海道札幌市手稲区
  • Year and Date: 2007-09-06
• [Remarks] 研究室HP
  • URL: http://www.opt.elec.mie-u.ac.jp
• [Remarks] 三重大学極限ナノエレクトロニクスセンターHP
  • URL: http://www.mie-u.ac.jp/research/intro/ct0003-00.html
• [Remarks] (研究室HP)
  • URL: http://www.opt.elec.mie-u.ac.jp
• [Remarks] (三重大学極限ナエレクトロニクスセンクーHP)
  • URL: http://www.mie-u.ac.jp/research/intro/ct0003-00.html