| Project/Area Number |
18360014
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| Research Category |
Grant-in-Aid for Scientific Research (B)
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| Allocation Type | Single-year Grants |
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| Section | 一般 |
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| Research Field |
Applied materials science/Crystal engineering
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| Research Institution | National Institute of Advanced Industrial Science and Technology |
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Principal Investigator |
HASEGAWA Tatsuo National Institute of Advanced Industrial Science and Technology, National Institute of Advanced Industrial Science and Technology,(AIST),Correlated Electron Research Center(CERC), Team Leader (00242016)
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| Co-Investigator(Kenkyū-buntansha) |
YAMADA Toshikazu National Institute of Advanced Industrial Science and Technology,(AIST), Correlated Electron Research Center(CERC), Senior Research Scientist (20358261)
NAKAMURA Takayoshi Hokkaido University, Research Institute for Electronic Science(RIES), Professor (60270790)
SAITO Gunzi Kyoto University, Graduate School of Science, Professor (40132724)
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| Project Period (FY) |
2006 – 2007
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| Project Status |
Completed (Fiscal Year 2007)
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| Budget Amount *help |
¥16,310,000 (Direct Cost: ¥14,600,000、Indirect Cost: ¥1,710,000)
Fiscal Year 2007: ¥7,410,000 (Direct Cost: ¥5,700,000、Indirect Cost: ¥1,710,000)
Fiscal Year 2006: ¥8,900,000 (Direct Cost: ¥8,900,000)
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| Keywords | Organic Transistors / Molecular Conductors / Electronic Device / Interface Properties / Inkjet Printing / Electrical Contacts |
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| Research Abstract |
In this research project we undertook to develop interface engineering of organic field-effect transistors (FETs) by using charge-transfer (CT) materials. Within the research term, we successfully achieved high performance channel materials, applied inkjet printing into fabrication of organic metal electrodes, and developed methods for controlling film morphologies. Here we outline the following three topics;
1) Tetrathiafulvalene-based high mobility channel materials: Development of molecular semiconductors with high carrier mobility is one of most important subjects in organic transistors. We found that HMTTF single crystal FETs exhibit high mobilities exceeding 10 cm2/Vs. To achieve this performance, we found it indispensable to optimize carrier injections at source/drain contacts by using organic metal electrodes using TTF-TCNQ.
2) Inkjet printing of molecular conductor films: Important issue in organic electronics is to apply printing techniques for manufacturing thin-film devices.
… More
In order to apply organic metal electrodes into printing processes, we developed "double-shot inkjet printing", where inks of component donor and acceptor molecules are individually printed at the same position to form complexes just on the substrates. The method enables us to obtain patterned thin films of TTF-TCNQ showing electrical conductivity higher than 10 S/cm. We also found that pentacene thin film FETs using the inkjet printed TTF-TCNQ films as source/drain electrodes show fairly sharp on/off switching and low threshold gate voltage compared with devices composed of conventional gold electrodes.
3) Interface engineering of molecular semiconductor films: We found that the films of DBTTF were grown to have huge grain size exceeding 0.02mm on top of fully trimethylsilyl-substituted SiO2 gate dielectric layers by using HMDS. We also found that the decrease of hydrophobic nature of substrate surfaces affords the decrease of the grain sizes, and that the film morphology is closely associated with the subthreshold properties of organic thin film FETs. Less
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