New development of the theories of nano-interfaces and their application to nano-devices

• Project/Area Number: 18360017
• Research Category: Grant-in-Aid for Scientific Research (B)
• Allocation Type: Single-year Grants
• Section: 一般
• Research Field: Thin film/Surface and interfacial physical properties
• Research Institution: University of Tsukuba
• Principal Investigator: SHIRAISHI Kenji University of Tsukuba, 大学院・数理物質科学研究科, 教授 (20334039)
• Co-Investigator(Kenkyū-buntansha): NAKAYAMA Takashi) 千葉大学, 理学部, 教授 (70189075) ; OSHIYAMA Atsushi 東京大学, 大学院・工学系研究科, 教授 (80143361) ; OKADA Susumu 筑波大学, 大学院・数理物質科学研究科, 准教授 (70302388) ; MASARU Tateno 筑波大学, 大学院・数理物質科学研究科, 准教授 (40291926) ; BOERO Mauro 筑波大学, 大学院・数理物質科学研究科, 准教授 (40361315) ; BARBER Savas 筑波大学, 大学院・数理物質科学研究科, 助手 (90375402)
• Project Period (FY): 2006 – 2008
• Project Status: Completed (Fiscal Year 2008)
• Budget Amount: ¥17,520,000 (Direct Cost: ¥15,300,000、Indirect Cost: ¥2,220,000); Fiscal Year 2008: ¥4,810,000 (Direct Cost: ¥3,700,000、Indirect Cost: ¥1,110,000); Fiscal Year 2007: ¥4,810,000 (Direct Cost: ¥3,700,000、Indirect Cost: ¥1,110,000); Fiscal Year 2006: ¥7,900,000 (Direct Cost: ¥7,900,000)
• Keywords: 第一原理計算 / 界面 / ナノサイエンス / 将来デバイス / ナノデバイス / 半導体 / 酸化物 / 理論 / 金属 / ナノ物性 / 界面反応 / 絶縁体 / 量子効果 / 界面準位

Research Abstract

ナノスケール界面に独特の新しい物理概念の構築に成功し、従来の界面科学の常識を覆すことに成功した。具体的には従来の界面物理学で絶対的な極限と考えられていたショットキー極限が本当の極限ではないことを理論的に示し、さらに実験で実証した。また、金属シリサイドが形成の原子レベルの起源、歪んだGe層に生じる正孔の起源等も明らかにした。さらに、こうして得られたナノスケール界面の新概念を未来デバイスに応用することに成功した。

Research Products

• [Journal Article] Temperature dependence of capacitance of Si quantum dot floating gate MOS capacitor (2009)
  • Author(s): 櫻井蓉子
  • Journal Title: Journal of Physics, Conference Series (印刷中)
  • Peer Reviewed
• [Journal Article] Theoretical studies of Coupled Quantum Dot System with a Two-dimensional Electron Gas in the Magnetic Fields. (2009)
  • Author(s): 高田幸宏
  • Journal Title: Journal of Physics, Conference Series (印刷中)
  • Peer Reviewed
• [Journal Article] Theoretical Study oh Time Depehdent Phenomena of Photo-Assisted Tunneling through Charged Quantum Dot (2009)
  • Author(s): 村口正和
  • Journal Title: Joutnal of Physics C (印刷中)
  • Peer Reviewed
• [Journal Article] Quantum cascade multi-electron in jection into Si-quantum-dot floatihg gates embedded in SiO2 matrices (2008)
  • Author(s): 高田幸宏
  • Journal Title: Applied Surface Science 254 Pages: 6199-6202
  • Peer Reviewed
• [Journal Article] Theoretical study of the time-dependent phenomena on a two-dimensional electron gas weakly coupled with a discrete level (2008)
  • Author(s): 村口正和
  • Journal Title: Japanese Joumal of Applied Physics 47 Pages: 7807-7811
  • Peer Reviewed
• [Journal Article] Energetics of nanoscale graphene ribbons: Edge geometries and electronic structures (2008)
  • Author(s): 岡田晋
  • Journal Title: Physical Review B. 77
  • Peer Reviewed
• [Journal Article] Energetics of Carbon Peapods: Radial deformation of nanotubes and aggreation of encapsulated C60 (2008)
  • Author(s): 岡田晋
  • Journal Title: Physical Review B 77
  • Peer Reviewed
• [Journal Article] Ge vacancies at Ge/Si interfaces: Stress-enhanced pairing distortion (2008)
  • Author(s): K. Takai, K. Shiraishi, A. Oshiyama
  • Journal Title: PHYSICAL REVIEW B 77
  • Peer Reviewed
• [Journal Article] 金属/絶縁体界面の統一理論 (2008)
  • Author(s): 白石賢二、中山隆史
  • Journal Title: 表面科学 29 Pages: 92-98
  • NAID: 10021165483
  • Peer Reviewed
• [Journal Article] Quantum effects in a double-walled carbon nanotube capacitor (2007)
  • Author(s): K. Uchida, S. Okada, K. Shiraishi, and A. Oshiyama
  • Journal Title: PHYSICAL REVIEW B 76(15) : Art. No. 155436 OCT
  • NAID: 120007139048
  • Peer Reviewed
• [Journal Article] Suppression of oxygen vacancy formation in Hf-based high-k dielectrics by lanthanum incorporation (2007)
  • Author(s): N, Umezawa, K, Shiraishi, et.al.
  • Journal Title: APPLIED PHYSICS LETTERS 91(13) : Art. No. 132904 SEP
  • Peer Reviewed
• [Journal Article] Physical origin of stress-induced leakage currents in ultra-thin silicon dioxide films (2007)
  • Author(s): T. Endoh, K. Hirose, K. Shiraishi
  • Journal Title: IEICE TRANSACTIONS ON ELECTRONICS E90C Pages: 955-961
  • NAID: 110007519658
  • Peer Reviewed
• [Journal Article] Role of nitrogen atoms in reduction of electron charge traps in Hf-based high-k dielectrics (2007)
  • Author(s): N. Umezawa, K. Shiraishi, K. Torii, et. al.
  • Journal Title: IEEE ELECTRON DEVICE LETTERS 28 Pages: 363-365
  • Peer Reviewed
• [Journal Article] Suppression of oxygen vacancy formation in Hf-based high-k dielectrics by lanthanum incorporation (2007)
  • Author(s): N. Umezawa, K. Shiraishi, S. Sugino, et. al.
  • Journal Title: APPLIED PHYSICS LETTERS 91
  • Peer Reviewed
• [Journal Article] Gate-component-induced high-k compositional change for dual-metal/dual-high-k CMOS-Cost-effective approach to utilize the effective work function stabilization by pinning- (2007)
  • Author(s): M. Kadoshima, Y. Sugita, K. Shiraishi, H. Watanabe, S. Miyazaki, T. Chikyow, K. Yamada, T. Aminaka, E. Kurosawa, T. Matsuki, T. Aoyama, Y. Nara, and Y. Ohji.
  • Journal Title: Technical Digest of 2007 Symposium on VLSI Technology Pages: 66-67
  • Peer Reviewed
• [Journal Article] Influences of annealing in reducing and oxidizing ambients on flatband voltage properties of HfO2 gate stack structures (2007)
  • Author(s): K. Ohmori, P. Ahmet, M. Yoshitake, T. Chikyow, K. Shiraishi, K. Yamabe, H. Watanabe, Y. Akasaka, Y. Nara, K.-S. Chang, M. L. Green, K. Yamada
  • Journal Title: JOURNAL OF APPLIED PHYSICS 101
  • Peer Reviewed
• [Journal Article] Ab initio-based approach on initial growth kinetics of GaN on GaN(001) (2007)
  • Author(s): Y. Kangawa, Y. Matsuo, T. Akiyama, T. Ito, K. Shiraishi and K. Kakimoto
  • Journal Title: JOURNAL OF CRYSTAL GROWTH 301 Pages: 75-78
  • Peer Reviewed
• [Journal Article] Modified Oxygen Vacancy Induced Fermi Level Pinning Model Extendable to P-Metal Pinning (2006)
  • Author(s): Y. Akasaka, G. Nakamura, K. Shiraishi, N. Umezawa, K. Yamabe, O. Ogawa, M. Lee, T. Amiaka, T. Kasuya, H. Watanabe, T. Chikyow, F. Ootsuka, Y. Nara, and K. Nakamura
  • Journal Title: Jpn. J. Appl. Phys Part 2, 45
  • NAID: 10018461127
  • Peer Reviewed
• [Journal Article] THEORETICAL STUDIES ON THE PHYSICAL PROPERTIES OF POLY-SI AND METAL GATES/HfO_2 RELATED HIGH-K DIELECTRICS INTERFACES (2006)
  • Author(s): K.Shiraishi, K.Torii, Y.Akasaka, T.Nakayama, T.Nakaoka, S.Miyazaki, T.Chikyow, K.Yamada, Yasuo Nara
  • Journal Title: ECS Transactions 1(5) Pages: 479-479
• [Journal Article] Extensive Studies for Effects of Nitrogen Incorporation into Hf-based High-k Gate Dielectricxs (2006)
  • Author(s): N.Umezawa, K.Shiraishi, H.Watanabe, K.Torii, Y.Akasaka, S.Inumiya, M.Boero, A.Uedono, S.Miyazaki, T.Ohno, T., Chikyow, K.Yamabe, Y.Nara, K.Yamada
  • Journal Title: ECS Transactions 2(1) Pages: 63-63
• [Journal Article] Physics of Metal/High-k Interfaces (2006)
  • Author(s): T.Nakayama, K.Shiraishi, S.Miyazaki, Y.Akasaka, T.Nakaoka, K.Torii, A.Ohta, P.Ahmet, K.Ohmori, N.Umezawa, H.Watanabe, T.Chikyow, Y.Nara, H.Iwai, K.Yamada
  • Journal Title: ECS Transactions 3(3) Pages: 129-129
• [Journal Article] Wide Controllability of Flatband Voltage in La_2O_3 Gate Stack Structures - Remarkable Advantages of La_2O_3 over HfO_2 - (2006)
  • Author(s): K.Ohmori, P.Ahmet, K.Shiraishi, K.Yamabe, H.Watanabe, Y.Akasaka, N.Umezawa, K.Nakajima, M.Yoshitake, T.Nakayama, K.-S.Chang, K.Kakushima, Y.Nara, M.L.Green, H.Iwai, K.Yamada, T.Chikyow
  • Journal Title: ECS Transactions 3(3) Pages: 351-351
• [Journal Article] Modified Oxygen Vacancy Induced Fermi Level Pinning Model Extendable to P-Metal Pinning (2006)
  • Author(s): Y.Akasaka, G.Nakamura, K.Shiraishi, N.Umezawa, K.Yamabe, O.Ogawa, M.Lee, T.Amiaka, T.Kasuya, H.Watanabe, T.Chikyow, F.Ootsuka, Y.Nara, K.Nakamura
  • Journal Title: Jpn. J. Appl. Phys. Part 2 45
  • NAID: 10018461127
• [Journal Article] Introduction of defects into HfO_2 gate dielectrics by metal-gate deposition studied using x-ray photoelectron spectroscopy and positron annihilation (2006)
  • Author(s): A.Uedono, T.Naito, T.Otsuka, K.Shiraishi, K.Yamabe, S.Miyazaki, H.Watanabe, N.Umezawa, T.Chikyow, Y.Akasaka, S.Kamiyama, Y.Nara, Yamada
  • Journal Title: J. Appl. Phys. 100
• [Journal Article] Oxygen-Vacancy-Induced Threshold Voltage Shifts in Hf-Related High-k Gate Stacks (2006)
  • Author(s): K.Shiraishi, K.Yamada, K.Torii, Y.Akasaka, K.Nakajima, M.Konno, T.Chikyow, H.Kitajima, T.Arikado, Y.Nara
  • Journal Title: Thin Solid Films 508 Pages: 305-305
• [Journal Article] New Theory of Effective Work Functions at Metal/High-k Dielectric Interfaces - Application to Metal/High-k HfO_2 And La_2O_3 Dielectric Interfaces - (2006)
  • Author(s): K.Shiraishi, T.Nakayama, Y.Akasaka, S.Miyazaki, T.Nakaoka, K.Ohmori, P.Ahmet, K.Torii, H.Watanabe, T.Chikyow, Y.Nara, H.Iwai, K.Yamada
  • Journal Title: ECS Transactions 2(1) Pages: 25-25
• [Journal Article] A Novel Remote Reactive Sink Layer Technique for the Control of N and O Concentrations in Metal/High-k Gate Stacks (2006)
  • Author(s): Y.Akasaka, K.Shiraishi, N.Umezawa, O.Ogawa, T.Kasuya, T.Chikyow, F.Ootsuka, Y.Nara, K.Nakamura
  • Journal Title: Technical Digest of 2006 Symposium on VLS1 Tech., Honolulu, USA Pages: 206-206
• [Journal Article] Nano-scale view of atom intermixing at metal/semiconductor interfaces (2006)
  • Author(s): T.Nakayama, S.Itaya, D.Murayama
  • Journal Title: J. Phys. Conf. Ser. 38 Pages: 216-216
• [Journal Article] Thernal annihilation process of stacking-fault tetrahedron defect in Si-film epitaxy (2006)
  • Author(s): R.Kobayashi, T.Nakayama
  • Journal Title: Thin Solid Films 508 Pages: 29-29
• [Presentation] MONOS型メモリたおけるSiN層のN空孔型欠陥の原子構造と電子構造 (2009)
  • Author(s): 山口慶太
  • Organizer: 2009年春華第56回応用物理学関係連合講演会
  • Place of Presentation: 筑波大学
  • Year and Date: 2009-03-30
• [Presentation] MONOS型メモリにおけるSiN層へのO混入の効果の理論的検討 (2009)
  • Author(s): 大竹朗
  • Organizer: 2009年春季第56回応用物理学関係連合講演会
  • Place of Presentation: 筑波大学
  • Year and Date: 2009-03-30
• [Presentation] Temperature Dependence of Electron Tunneling between Quantum Dots and Electron Gas (2009)
  • Author(s): 櫻井蓉子
  • Organizer: American Physical Society March Meeting
  • Place of Presentation: ピッツバーグ (アメリカ)
  • Year and Date: 2009-03-19
• [Presentation] New insight into Tunneling Process between Quantum Dot and Electron Gas (2009)
  • Author(s): 村口正和
  • Organizer: American Physical Society March Meeting
  • Place of Presentation: ピッツバーグ (アメリカ)
  • Year and Date: 2009-03-19
• [Presentation] MONOS型メモリの電荷蓄積機構の第一原理計算による考察 (2009)
  • Author(s): 大竹朗
  • Organizer: 第14回ゲートスタック研究会
  • Place of Presentation: 東レ三島研修センター
  • Year and Date: 2009-01-24
• [Presentation] 第一源理計算によるシリサイドの安定性に主関する研究 (2009)
  • Author(s): 五月女真一
  • Organizer: 第14回ゲートスタック研究会
  • Place of Presentation: 東レ三島研修センター
  • Year and Date: 2009-01-24
• [Presentation] Temperature Dependence of Electron Transport betweeen Quantum Dots and Electron Gas (2009)
  • Author(s): 櫻井蓉子
  • Organizer: Intermation Symosium on Nanoscal Transport and Technology
  • Place of Presentation: 厚木
• [Presentation] Generation of Acceptor Levels in Ge By the Uniaxial Strain-ATheoretical Apprqach- (2008)
  • Author(s): 高井健太郎
  • Organizer: 215th Meeting of Electrochemical Society
  • Place of Presentation: ホノルル (アメリカ)
• [Presentation] Theoretical investigations on metal/high-k interfaces (2008)
  • Author(s): 白石賢二
  • Organizer: 2008 Intemational Conferonce on Solid-State and Integrated-Circuit Technology
  • Place of Presentation: 北京
• [Presentation] Characteristic Nature of High-k Dielectric Interfaces (2008)
  • Author(s): K. Shiraishi
  • Organizer: IEEE EDS WIMNACT 2008 on NANOELECRONICS
  • Place of Presentation: Sikkim, India
• [Presentation] Physics of Schottky barrier at Metal/high-k Interface (2008)
  • Author(s): T. Nakayama, R. Ayuda, H. Nii, K. Shiraishi
  • Organizer: 2008 MRS Spring Meeting, H5.5
  • Place of Presentation: San Francisco, USA
• [Presentation] Schottky barrier and stability of metal/high-k interfaces ; theoretical view (2007)
  • Author(s): T. Nakayama(Invited)
  • Organizer: Int. Conf. Solid State Devices and Materials
  • Place of Presentation: Tsukuba, Japan
• [Presentation] Theoretical Studies on Metal/. High-k Gate Stacks (2007)
  • Author(s): K. Shiraishi, Y. Akasaka, G. Nakamura, T. Nakayama, S.Miyazaki, H.Watanabe, A.Ohta, K. Ohmori, T. Chikyow, Y. Nara, K.Yamabe, and K. Yamada(Invited)
  • Organizer: 211th Meeting of Electrochemical Society, Chicago
  • Place of Presentation: USA
• [Presentation] Schottky barrier and stability of metal/high-k interfaces; theoretical view (2007)
  • Author(s): T. Nakayama
  • Organizer: Int. Conf. Solid State Devices and Materials
  • Place of Presentation: Tsukuba, Japan.
• [Presentation] Theoretical Studies on Metal/.High-k Gate Stacks (2007)
  • Author(s): K. Shiraishi, Y. Akasaka, G. Nakamura, T. Nakayama, S. Miyazaki, H. Watanabe, A. Ohta, K. Ohmori, T. Chikyow, Y. Nara, K. Yamabe, and K. Yamada
  • Organizer: 211th Meeting of Electrochemical Society
  • Place of Presentation: Chicago, USA
• [Presentation] How can first principles calculations give large contributions to industries? (2007)
  • Author(s): K. Shiraishi
  • Organizer: ISSP International Workshop/Symposium on Foundation and Application of Density Functional Theory
  • Place of Presentation: Kashiwa, Japan
• [Presentation] Theoretical Studies on Fermi Level Pining of Hf-Based High-k Gate Stacks Based on Thermodynamics (2007)
  • Author(s): K. Shiraishi, Y. Akasaka, G. Nakamura, M. Kadoshima, H. Watanabe, K. Ohmori, T. Chikyow, K. Yamabe, Y. Nara, Y. Ohji and K. Yamada
  • Organizer: 212th Meeting of Electrochemical Society
  • Place of Presentation: Washington D. C., USA
• [Presentation] Interface Properties of Hf-Based High-k Gate Dielectrics-O Vacancies and Interface Reaction (2007)
  • Author(s): K. Shiraishi
  • Organizer: 14th International Workshop on the Physics of Semiconductor Devices
  • Place of Presentation: Mumbai, India