Observation and control of spin dependent transport phenomena in magnetic/non-magnetic semiconductor nanostructures by using BEEM/STM techniques

• Project/Area Number: 18360021
• Research Category: Grant-in-Aid for Scientific Research (B)
• Allocation Type: Single-year Grants
• Section: 一般
• Research Field: Thin film/Surface and interfacial physical properties
• Research Institution: Tokyo Institute of Technology
• Principal Investigator: YOSHINO Junji Tokyo Institute of Technology, 大学院・理工学研究科, 教授 (90158486)
• Project Period (FY): 2006 – 2008
• Project Status: Completed (Fiscal Year 2008)
• Budget Amount: ¥17,420,000 (Direct Cost: ¥14,000,000、Indirect Cost: ¥3,420,000); Fiscal Year 2008: ¥3,510,000 (Direct Cost: ¥2,700,000、Indirect Cost: ¥810,000); Fiscal Year 2007: ¥11,310,000 (Direct Cost: ¥8,700,000、Indirect Cost: ¥2,610,000); Fiscal Year 2006: ¥2,600,000 (Direct Cost: ¥2,600,000)
• Keywords: スピンエレクトロニクス / スピン依存トンネル現象 / STM / STS / ハーフメタル / BEEM / BEES / MEES

Research Abstract

磁性体/半導体のナノ構造の性能改善を目指して, BEEM/STM技術を用いてそのスピン依存トンネル現象を観測から界面のスピン状態に関する知見を得ること, さらに新しいハーフメタル型磁性体を用いたナノ構造の構築を目指して研究を行った. その結果, 特にGaAs(001)c(4x4)構造が, 2種の構造を有するとの認識に立ち, ハーフメタル型の電子構造を有するという理論予測のあるため新しい磁性材料として期待が持たれているzb型MnAsおよびCrAsのGaAs(001)表面上への成長の初期過程を明らかにした.

Research Products

• [Journal Article] Initial growth mechanism of Mn and MnAs on GaAs c(4×4)reconstructed surfaces (2009)
  • Author(s): D. Komamiya J. Okabayashi, and J. Yoshino
  • Journal Title: Journal of Crystal Growth 311 Pages: 2135-2138
  • Peer Reviewed
• [Journal Article] Mn deposition on GaAs(00l)-c(4×4)α reconstructed surfaces : A scanning-tunneling-microscopy study (2009)
  • Author(s): D. Komamiya, et al.
  • Journal Title: Journal of Crystal Growth 311 Pages: 2135-2138
  • Peer Reviewed
• [Journal Article] Size control of nanoscaled MnAs dots fabricates on sulfu-passivated GaAs(001) (2008)
  • Author(s): J. Okabayashi, Y. Ueno, and J. Yoshino
  • Journal Title: Physica status solidi C
  • Peer Reviewed
• [Journal Article] Size control of nanoscaled MnAs dots fabricates on sulfu-passivated GaAs(001) (2008)
  • Author(s): J. Okabayashi et. al.
  • Journal Title: Physica status solidi C (掲載決定)
  • Peer Reviewed
• [Journal Article] Initial growth of MnAs on GaAs(001)-c(4×4)reconstructed surface (2007)
  • Author(s): T. Arai, M. Suzuki, J. Okabayashi, and J. Yoshino
  • Journal Title: Physica E 40 Pages: 332-334
  • Peer Reviewed
• [Journal Article] Structure transition between two GaAs(001)-c(4x4)surface reconstruction in As4 flux (2007)
  • Author(s): T. Arai, M. Suzuki, J. Okabayashi, and J. Yoshino
  • Journal Title: J. Crystal Growth
  • Peer Reviewed
• [Journal Article] Initial growth of MnAs on GaAs(001)-c(4×4) reconstructed surface (2007)
  • Author(s): Arai et. al.
  • Journal Title: Phisica E 40 Pages: 332-334
  • Peer Reviewed
• [Journal Article] Structure transition between two GaAs(001)-c(4x4) surface reconstruction in As_4 flux (2007)
  • Author(s): T.Arai et al.
  • Journal Title: J. Cryst. Growth 301-302 Pages: 22-25
• [Journal Article] Initial growth of MnAs on GaAs(001)-c(4x4) reconstructed surface (2007)
  • Author(s): Arai et al.
  • Journal Title: Physica E (accepted)
• [Presentation] Mn deposition on GaAs(001)-c(4×4)α reconstructed surfaces, Ascanning-tunneling-microscopy study (2008)
  • Author(s): D. Komamiya, J. Okabayashi, and J. Yoshino
  • Organizer: 15th International conference on molecular beam epitaxy
  • Place of Presentation: Vancouver, Canada
  • Year and Date: 2008-08-05
• [Presentation] Mn deposition on GaAs(001)-c(4×4)α reconstructed surfaces : A scanning-tunneling-microscopy study (2008)
  • Author(s): D. Komamiya, et al.
  • Organizer: 15th International conference on molecular beam epitaxy
  • Place of Presentation: Vancouver, Canada
  • Year and Date: 2008-08-05
• [Presentation] Initial growth mechanism of Mn and MnAs on GaAs c(4×4)reconstructed surfacesa (2008)
  • Author(s): D. Komamiya T. Arai, J. Okabayashi, and J. Yoshino
  • Organizer: 27th Electronic Materials Symposium
  • Place of Presentation: Izu, Shizuoka
  • Year and Date: 2008-07-11
• [Presentation] Initial growth mechanism of Mn and MnAs on GaAs c(4×4) reconstructed surfaces (2008)
  • Author(s): D. Komamiya, et al.
  • Organizer: 28th Electronic Materials Symposium
  • Place of Presentation: Izu, Shizuoka
  • Year and Date: 2008-07-11
• [Presentation] 硫黄蒸気処理による硫黄終端GaAs(001)面上に形成したMnAsナノドットのSTM/STS (2008)
  • Author(s): 植野友理子, 荒井俊昭, 岡林潤, 吉野淳二
  • Organizer: 応用物理学会第55回応用物理学関係連合講演会
  • Place of Presentation: 日大船橋
  • Year and Date: 2008-03-28
• [Presentation] 吉野淳二GaAs(001)c(4×4)α再構成表面へのMn吸着過程 (2008)
  • Author(s): 駒宮大介, 植野友理子, 岡林潤, 吉野淳二
  • Organizer: 応用物理学会第55回応用物理学関係連合講演会
  • Place of Presentation: 日大船橋
  • Year and Date: 2008-03-28
• [Presentation] GaAs(001)c(4×4)α再構成表面へのMn吸着過程 (2008)
  • Author(s): 駒宮大介
  • Organizer: 応用物理学会第55回応用物理学関係連合講演会
  • Place of Presentation: 日本大学(船橋)
  • Year and Date: 2008-03-28
• [Presentation] 硫黄蒸気処理による硫黄終端GaAs(001)面上に形成したMnAsナノドットのSTM/STS (2008)
  • Author(s): 植野友理子
  • Organizer: 応用物理学会第55回応用物理学関係連合講演会
  • Place of Presentation: 日本大学(船橋)
  • Year and Date: 2008-03-28
• [Presentation] Morphology and local electronic properties in nanoscaled MnAs dots on sulfur-passivated GaAs(001) (2007)
  • Author(s): J. Okabayashi, T. Arai, Y. Ueno, and J. Yoshino
  • Organizer: 第12回「半導体スピン工学の基礎と応用」研究会
  • Place of Presentation: 大阪
  • Year and Date: 2007-12-20
• [Presentation] Morphology and local electronic properties in nanoscaled MnAs dots on sulfur-passivated GaAs(001) (2007)
  • Author(s): Jun Okabayashi
  • Organizer: 第12回 「半導体スピン工学の基礎と応用」研究会
  • Place of Presentation: 大阪大学
  • Year and Date: 2007-12-20
• [Presentation] Surface Phase Transition Triggered by MnAs Deposition on GaAs(001)c(4x4) (2007)
  • Author(s): J. Okabayashi. Y. Ueno, and J. Yoshino
  • Organizer: The 34th International conference on Compound Semiconductors
  • Place of Presentation: Kyoto
  • Year and Date: 2007-10-15
• [Presentation] Surface Phase Transition Triggered by MnAs Deposition on GaAs(001)c(4x4); The 34th International conference on Compound Semiconductors (2007)
  • Author(s): Jun Okabayashi
  • Organizer: The 34th International conference on Compound Semiconductors
  • Place of Presentation: 京都大学
  • Year and Date: 2007-10-15
• [Presentation] GaAs(001)面上に形成したMnAsナノドットのSTM/STS観測 (2007)
  • Author(s): 植野友理子, 岡林潤, 吉野淳二
  • Organizer: 応用物理学会第68回応用物理学会学術講演会
  • Place of Presentation: 北海道工業大学
  • Year and Date: 2007-09-08
• [Presentation] Shape control in nanoscaled MnAs dots on sulfur-passivated GaAs(001) (2007)
  • Author(s): Y. Ueno, T. Arai, J. Okabayashi and J. Yoshino
  • Organizer: 26th Electronic Materials Symposium
  • Place of Presentation: Shiga
  • Year and Date: 2007-07-05
• [Presentation] Shape control in nanoscaled MnAs dots on sulfur-passivated GaAs(001) (2007)
  • Author(s): Yuriko Ueno
  • Organizer: 第26回電子材料シンポジウム
  • Place of Presentation: 滋賀(ラフォーレ琵琶湖)
  • Year and Date: 2007-07-05
• [Presentation] GaAs(001)上へのMnAsの界面形成過程の観察 (2007)
  • Author(s): 荒井俊昭、岡林潤、植野友理子、吉野淳二
  • Organizer: 日本物理学会春季大会
  • Place of Presentation: 鹿児島大学
  • Year and Date: 2007-03-18
• [Presentation] Anomalous behavior in MnAs initial growth on GaAs(001)-c(4×4)reconstructed surface (2007)
  • Author(s): T. Arai, Y. Ueno, M. Suzuki, J. Okabayashi, and J. Yoshino
  • Organizer: Second International Symposium on Nanometer-Scale Quantum Physics
  • Place of Presentation: Tokyo
  • Year and Date: 2007-01-24
• [Presentation] Structure transition between two GaAs(001)-c(4x4)surface reconstructions in As4 flux (2006)
  • Author(s): T. Arai, M. Suzuki, Y. Ueno, J. Okabayashi, and J. Yoshino
  • Organizer: The 14th International Conference on Molecular Beam Epitaxy
  • Place of Presentation: Tokyo
  • Year and Date: 2006-09-03
• [Presentation] Initial growth of MnAs on GaAs(001)-c(4×4)reconstructed surfaces (2006)
  • Author(s): T. Arai, M. Suzuki, Y. Ueno, J. Okabayashi, and J. Yoshino
  • Organizer: The 14th International Conference on Molecular Beam Epitaxy
  • Place of Presentation: Tokyo
  • Year and Date: 2006-09-03
• [Presentation] Initial-growth observation of MnAs on GaAs(001)and(111)B surface (2006)
  • Author(s): T. Arai, Y. Ueno, M. Suzuki, J. Okabayashi and J. Yoshino
  • Organizer: 25th Electronic Materials Symposium
  • Place of Presentation: 伊豆長岡
  • Year and Date: 2006-07-05