Optical phase control using a giant electro-refractive effect in novel potential-tailored quantum wells

• Project/Area Number: 18360035
• Research Category: Grant-in-Aid for Scientific Research (B)
• Allocation Type: Single-year Grants
• Section: 一般
• Research Field: Applied optics/Quantum optical engineering
• Research Institution: Yokohama National University
• Principal Investigator: ARAKAWA Taro Yokohama National University, 大学院・工学研究院, 准教授 (40293170)
• Co-Investigator(Kenkyū-buntansha): TADA Kunio 金沢工業大学, 工学部, 教授 (00010710) ; HANEJI Nobuo 横浜国立大学, 大学院・工学研究院, 教授 (30180920)
• Project Period (FY): 2006 – 2008
• Project Status: Completed (Fiscal Year 2008)
• Budget Amount: ¥17,190,000 (Direct Cost: ¥14,700,000、Indirect Cost: ¥2,490,000); Fiscal Year 2008: ¥5,070,000 (Direct Cost: ¥3,900,000、Indirect Cost: ¥1,170,000); Fiscal Year 2007: ¥5,720,000 (Direct Cost: ¥4,400,000、Indirect Cost: ¥1,320,000); Fiscal Year 2006: ¥6,400,000 (Direct Cost: ¥6,400,000)
• Keywords: 光変調器 / 光スイッチ / 量子井戸 / 半導体 / 電界誘起屈折率変化 / 分子線エピタキシー / 電界屈折率効果 / 屈折率変化 / 位相変調

Research Abstract

半導体超薄膜構造である量子井戸において、長距離光通信波長帯である1.55 ミクロン波長帯において、大きな電界屈折率変化が得られる構造を新たに提案し、その特性の理論的および実験的な研究を行った。その結果、理論予測に近い特性が得られることがわかり、その有用性を実証した。また、マッハ・ツェンダー干渉計型光変調器を作製し、低駆動電圧化を実現した。この成果は、次世代大容量光通信ネットワークの構築に大いに資するものと期待される。

Research Products

• [Journal Article] Electrorefractive Effect in GaInNAs/GaAs Five-Layer Asymmetric Coupled Quantum Well (2009)
  • Author(s): M Fukuoka, T. Toya, Y. Sawai, T. Arakawa, and K. Tada
  • Journal Title: Jpn. J. Appl. Phys 48(4)
  • NAID: 210000066665
  • Peer Reviewed
• [Journal Article] Electrorefractive Effect in GaInNAs/GaAs Five-Layer Asymmetric Coupled Quantum Well (2009)
  • Author(s): M. Fukuoka, T. Toya, Y. Sa. wai, I. Arakawa, K. Tada
  • Journal Title: Jpn. J. Appl. Phys. 48(4), 2009 vol. 48, no. 4(未決定)
  • NAID: 210000066665
  • Peer Reviewed
• [Journal Article] Nano-structured special quantum well for high-performance optical modulators(Invited) (2007)
  • Author(s): T. Arakawa and K. Tada
  • Journal Title: Proceedings of SPIE Vol.6782
• [Journal Article] Nano-structured special quantum well for high-performance optical modulators(Invited) (2007)
  • Author(s): T. Arakawa
  • Journal Title: Proceedings of SPIE Vol.6782, Optoelectronic Materials and Devices II 6782
• [Journal Article] Control of abnormal edge growth in selective area MOVPE of InP (2006)
  • Author(s): M. Sugiyama, N. Waki, Y. Nobumori, H. Song, T. Nakano, T. Arakawa, Y. Nakano, and Y. Shimogaki
  • Journal Title: J. Crystal Growth vol.287, no.2 Pages: 668-672
  • Peer Reviewed
• [Journal Article] Control of abnormal edge growth in selective area MOVPE of InP (2006)
  • Author(s): M.Sugiyama, N.Waki, Y.Nobumori, H.Song, T.Nakano, T.Arakawa, Y.Nakano, Y.Shimogaki
  • Journal Title: Journal of Crystal Growth 287・2 Pages: 668-672
• [Journal Article] Theoretical Analyses of InGaAs/InAlAs FACQW Compact and Low-Voltage Switches (2006)
  • Author(s): T.Arakawa, H.Miyake, Y.Nakada, K.Tada
  • Journal Title: Technical Digest of the 11th OptoElectronics and Communication Conference (OECC2006)
• [Journal Article] Characterization of Electrorefractive Effect in GaAs/AlGaAs FACQW Using Heterodyne Detection (2006)
  • Author(s): T.Arakawa, H.Itoh, T.Arima, N.Haneji, J.-H.Noh, K.Tada
  • Journal Title: Technical Digest of the 11th OptoElectronics and Communication Conference (OECC2006) Pages: 511-511
• [Journal Article] MBE Growth of GaAs/AlGaAs Five-Layer Asymmetric Coupled Quantum Well and Its Electrorefractive Properties (2006)
  • Author(s): T.Arakawa, K.Takada, T.Arima, J.-H.Noh, K.Tada
  • Journal Title: Abstract workbook of the 14th International Conference on Molecular Beam Epitaxy (MBE2006), p.155 Pages: 155-155
• [Journal Article] Electroabsorptive Properties of InGaAs/InAlAs Five-Layer Asymmetric Coupled Quantum Well (FACQW) (2006)
  • Author(s): T.Arakawa, K.Takimoto, S.Miyazaki, K.Yamaguchi, N.Haneji, J.-H.Noh, K.Tada
  • Journal Title: Extended abstracts of the 2006 International Conference on Solid State Devices and Materials (SSDM 2006), p.682-683 Pages: 682-683
  • NAID: 10022546428
• [Presentation] InGaAs/InAlAs FACQWの電気光学効果の理論解析(IV) (2009)
  • Author(s): 牛込基, 荒川太郎, 多田邦雄
  • Organizer: 第56回応用物理学関係連合講演会
  • Place of Presentation: 中部大学
  • Year and Date: 2009-04-02
• [Presentation] InGaAs/InAlAs五層非対称結合量子井戸マイクロリング共振器の作製 (2009)
  • Author(s): 槙野太郎, 長谷川亮, 荒川太郎, 國分泰雄
  • Organizer: 第56回応用物理学関係連合講演会
  • Place of Presentation: 中部大学
  • Year and Date: 2009-04-02
• [Presentation] InGaAs/InAlAs五層非対称結合量子井戸マッハ・ツェンダー型光変調器 (2009)
  • Author(s): 福岡正恭, 牛込基, 針木武大, 戸谷貴宏, 荒川太郎, 國分泰雄, 多田邦雄
  • Organizer: 電子情報通信学会 2009年総合大会
  • Place of Presentation: 松山
  • Year and Date: 2009-03-18
• [Presentation] 半導体マッハ・ツェンダー干渉計型光制御デバイス (2008)
  • Author(s): 荒川太郎
  • Organizer: 電子情報通信学会通信ソサエティ・フォトニックネットワーク(PN)研究会チュートリアル講演
  • Place of Presentation: 東京
  • Year and Date: 2008-11-21
• [Presentation] Theoretical Analysis of Electrorefractive Effect in GaInNAs/GaAs Five Layer Asymmetric Coupled Quantum Well (FACQW) for 1.3 micron Phase Modulator (2008)
  • Author(s): M. Fukuoka, T. Toya, Y. Sawai, T. Arakawa, and K. Tada
  • Organizer: Extended Abstracts of 2008 Internatinonal Conference on Solid State Device and Materials (SSDM)
  • Place of Presentation: Tsukuba
  • Year and Date: 2008-09-26
• [Presentation] Theoretical Analysis of Electrorefractive Effect in GaInNAs/GaAs Five Layer Asymmetric Coupled Quantum Well (FACQW) for 1.3 micron Phase Modulator (2008)
  • Author(s): M. Fukuoka, T. Toya, Y. Sawai, T. Arakawa., K. Tada
  • Organizer: 2008 Internatinonal Conference on Solid State Device and Materials (SSDM)
  • Place of Presentation: Tsukuba
  • Year and Date: 2008-09-26
• [Presentation] InGaAs/InAlAs FACQW Mach-Zehnder Modulator (2008)
  • Author(s): M. Fukuoka, T. Hariki, S. Tajitsu, T. Toya, T. Arakawa, K. Tada
  • Organizer: European Conference on Optical Communication(ECOC)
  • Place of Presentation: Brussels
  • Year and Date: 2008-09-24
• [Presentation] InGaAs/InAlAs FACQW Mach-Zehnder Modulator (2008)
  • Author(s): M. Fukuoka, T. Hariki, S. Tajitsu, T. Tova. T. Arakawa, K. Tada
  • Organizer: European Conference on Optical Communication(ECOC)2008
  • Place of Presentation: Brussel
  • Year and Date: 2008-09-24
• [Presentation] 高性能光変調器・光スイッチへ向けた非対称三重結合量子井戸の作製 (2008)
  • Author(s): 遠藤航, 荒川太郎, 多田邦雄
  • Organizer: 第69回応用物理学学術講演会
  • Place of Presentation: 中部大学
  • Year and Date: 2008-09-05
• [Presentation] InGaAs/InAlAs伸長歪FACQW偏光無依存位相変調器の設計 (2008)
  • Author(s): 槙野太郎, 福岡正恭, 荒川太郎, 國分泰雄, 多田邦雄
  • Organizer: 第69回応用物理学学術講演会
  • Place of Presentation: 中部大学
  • Year and Date: 2008-09-05
• [Presentation] FACQWを用いた4次直列結合マイクロリング共振器ヒットレス波長選択スイッチの設計 (2008)
  • Author(s): 後藤剛, 裴忠勲, 槙野太郎, 長谷川亮, 荒川太郎, 國分泰雄
  • Organizer: 第69回応用物理学学術講演会
  • Place of Presentation: 中部大学
  • Year and Date: 2008-09-02
• [Presentation] 一方向性発振マイクロリングレーザ用曲がり導波路の方向選択性損失特性 (2008)
  • Author(s): 大庫和弘, 槙野太郎, 荒川太郎, 國分泰雄
  • Organizer: 第69回応用物理学学術講演会
  • Place of Presentation: 中部大学
  • Year and Date: 2008-09-02
• [Presentation] Fabrication of Asymmetric Triply Coupled Quantum Well for High-Performance Optical Modulators/Switches (2008)
  • Author(s): W. Endo, H. Matsumoto, R. Shirakawa, T. Arakawa, and K. Tada
  • Organizer: 13th OptoElectronics and Communication Conference (OECC2008)
  • Place of Presentation: Sydney(ThP-67)
  • Year and Date: 2008-07-10
• [Presentation] Fabrication of Asymmetric Triply Coupled Quantum Well for High-Performance Optical Modulators/Switches (2008)
  • Author(s): W. Endo, H. Matsumoto, R. Shirakawa, T. Arakawa., K. Tada
  • Organizer: 13th OptoElectronics and Communication Conference(OECC2008)
  • Place of Presentation: Sydney
  • Year and Date: 2008-07-10
• [Presentation] Phase Modulator with InGaAs/InAlAs FACQW Grown by MOVPE (2008)
  • Author(s): R. Hasegawa, Y. Sawai , T. Amemiya, T. Arakawa, T. Tanemura, H. Simizu, K. Tada , and Y. Nakano
  • Organizer: 13th OptoElectronics and Communication Conference (OECC2008)
  • Place of Presentation: Sydney(TuH-5)
  • Year and Date: 2008-07-08
• [Presentation] Phase Modulator with InGaAs/InAlAs FACQW Grown by MOVPE (2008)
  • Author(s): R. Hasegawa, Y. Sawai, T. Amemiya, T. Arakawa. T. Tanemura, H. Simizu, K. Tada, Y. Nakano
  • Organizer: 13th OptoElectronics and Communication Conference(OECC2008)
  • Place of Presentation: Sydney
  • Year and Date: 2008-07-08
• [Presentation] Advanced Semiconductor Optical Modulators Based on Quantum Wells (2008)
  • Author(s): K. Tada and T. Arakawa
  • Organizer: Abstracts of Japan-Brazil Memorial Symposium on Science & Technology 1908-2008
  • Place of Presentation: Sao Paulo
  • Year and Date: 2008-06-24
• [Presentation] MOVPE法によるlnGaAs/InAlAs FACQWの作製と位相変調特性評価 (2008)
  • Author(s): 長谷川亮
  • Organizer: 第55回応用物理学関係連合講演会
  • Place of Presentation: 千葉
  • Year and Date: 2008-03-29
• [Presentation] InGaAs/InAlAs FACQWの製造誤差におけるトレランスの解析 (2008)
  • Author(s): 澤井泰
  • Organizer: 第55回応用物理学関係連合講演会
  • Place of Presentation: 千葉
  • Year and Date: 2008-03-29
• [Presentation] ハイメサ半導体マイクロリング波長選択スイッチ用結合部の設計 (2008)
  • Author(s): べ忠勲
  • Organizer: 電子情報通信学会 2008年総合大会
  • Place of Presentation: 北九州
  • Year and Date: 2008-03-19
• [Presentation] MBE法によるInGaAs/InAlAs FACQWを用いたマッハツェンダー型光変調器の作製 (2008)
  • Author(s): 針木武大
  • Organizer: 電子情報通信学会 2008年総合大会
  • Place of Presentation: 千葉
  • Year and Date: 2008-03-19
• [Presentation] Nano-structured special quantum well for high-performance optical modulators(Invited) (2007)
  • Author(s): K. Tada and T. Arakawa
  • Organizer: Asia-Pacific Optical Communications (APOC 2007), 6b-3
  • Place of Presentation: Wuhan, China(6b-3)
  • Year and Date: 2007-11-04
• [Presentation] Nano-structured special quantum well for high-performance optical modulators(Invited) (2007)
  • Author(s): K. Tada
  • Organizer: Asia-Pacific Optical Communications(APOC 2007)
  • Place of Presentation: Wuhan, China
  • Year and Date: 2007-11-04
• [Presentation] GaAs/AlGaAs五層非対称結合量子井戸(FACQW)光位相変調器の評価 (2007)
  • Author(s): 松本浩之
  • Organizer: 電子情報通信学会 2007年ソサエティ大会
  • Place of Presentation: 鳥取
  • Year and Date: 2007-09-10
• [Presentation] MOVPE法とMBE法によるInGaAs/InAIAs FACQW構造の作製と特性評価 (2007)
  • Author(s): 長谷川亮
  • Organizer: 第68回応用物理学会学術講演会
  • Place of Presentation: 札幌
  • Year and Date: 2007-09-06
• [Presentation] 1.55um帯用InGaAsP FACQWの電気光学効果のk・p摂動法による理論解析 (2007)
  • Author(s): 福岡正恭
  • Organizer: 第68回応用物理学会学術講演会
  • Place of Presentation: 札幌
  • Year and Date: 2007-09-04
• [Presentation] InGaAs/InAIAs五層非対称結合量子井戸の作製と光変調器への応用 (2007)
  • Author(s): 戸谷貴宏
  • Organizer: 電子情報通信学会光エレクトロニクス研究会
  • Place of Presentation: 札幌
  • Year and Date: 2007-08-24
• [Presentation] Five-Layer Asymmetric Coupled Quantum Well with Giant Electrorefractiv Effect(Invited) (2007)
  • Author(s): K. Tada and T. Arakawa
  • Organizer: International Nato-Optoelectonics Workshop (iNOW)
  • Place of Presentation: Lanzhou, China(Session 1-1)
  • Year and Date: 2007-08-07
• [Presentation] Five-Layer Asymmetric Coupled Quantum Well with Giant Electrorefractiv Effect (Invited) (2007)
  • Author(s): K. Tada
  • Organizer: Intemational Nato-Optoelectonics Workshop(iNOW)
  • Place of Presentation: Lanzhou, China
  • Year and Date: 2007-08-07
• [Presentation] Elecrorefractive Effect in InGaAsP Five Layer Asymmetric Coupled Quantum Well(FACQW) for High Performance Optical Modulators (2007)
  • Author(s): M. Fukuoka, T. Toya, T. Arakawa, and K. Tada
  • Organizer: 12th OptoElectronics and Communication Conference (OECC2007), 12P-28
  • Place of Presentation: Yokohama, Japan(12P-28)
  • Year and Date: 2007-07-12
• [Presentation] Elecrorefractive Effect in InGaAsP Five Layer Asymmetric Coupled Quantum Well(FACQW)for High Performance Optical Modulators (2007)
  • Author(s): M. Fukuoka
  • Organizer: The 12th OptoElectronics and Communication Conference(OECC2007)
  • Place of Presentation: Yokohama
  • Year and Date: 2007-07-12
• [Presentation] InGaAs/InAlAs Five-Layer Asymmetric Coupled Quantum Well and Its Application to Compact and Low-Voltage Optical Switch (2007)
  • Author(s): T. Arakawa, Takahiro Toya, K. Yamaguchi, T.Uchimura, J.-H. Noh, and K. Tada
  • Organizer: 9th International Conference on Indium Phosphide and Related Materials(IPRM'07)
  • Place of Presentation: Matsue(PB13)
  • Year and Date: 2007-05-16
• [Presentation] InGaAs/InAIAs Five-Layer Asymmetric Coupled Quantum Well and Its Application to Compact and Low-Voltage Optical Switch (2007)
  • Author(s): T. Arakawa
  • Organizer: 19th Intenational Conference on Indium Phosphide and Related Materials(IPRM'07)
  • Place of Presentation: Matsue
  • Year and Date: 2007-05-16
• [Presentation] GaAs/AlGaAs Five-Layer Asymmetric Coupled Quantum Well (FACQW) Mach-Zehnder Modulator (2007)
  • Author(s): T. Arakawa, K. Takada, F. Tadano, T Arima, J.-H. Noh, and K. Tada
  • Organizer: Conference on Lasers and Electro-Optics (CLEO'07)
  • Place of Presentation: Baltimore, USA(CMP3)
  • Year and Date: 2007-05-07
• [Presentation] GaAs/AlGaAs Five-Layer Asymmetric Coupled Quantum Well(FACQW)Mach-Zehnder Modulator (2007)
  • Author(s): T. Arakawa
  • Organizer: Conference on Lasers and Electro-Optics(CLEO'07)
  • Place of Presentation: Baltmore, USA
  • Year and Date: 2007-05-07
• [Presentation] Electroabsorptive Properties of InGaAs/InAlAs Five-Layer Asymmetric Coupled Quantum Well (FACQW) (2006)
  • Author(s): T. Arakawa, K. Takimoto, S. Miyazaki, K. Yamaguchi, N. Haneji, J.-H. Noh, and K. Tada
  • Organizer: 2006 International Conference on Solid State Devices and Materials(SSDM 2006)
  • Place of Presentation: Yokohama(P-8-5)
  • Year and Date: 2006-09-14
• [Presentation] MBE Growth of GaAs/AlGaAs Five-Layer Asymmetric Coupled Quantum Well and Its Electrorefractive Properties (2006)
  • Author(s): T. Arakawa, K. Takada, T. Arima, J.-H. Noh, and K. Tada
  • Organizer: The 14th International Conference on Molecular Beam Epitaxy(MBE 2006)
  • Place of Presentation: Tokyo(TuP-42)
  • Year and Date: 2006-09-05
• [Presentation] Theoretical Analyses of InGaAs/InAlAs FACQW Compact and Low-Voltage Switches (2006)
  • Author(s): T. Arakawa, H. Miyake, Y. Nakada, and K. Tada
  • Organizer: The 11th OptoElectronics and Communication Conference(OECC2006)
  • Place of Presentation: Kaohsiung, Taiwan(6C1-1)
  • Year and Date: 2006-07-06
• [Presentation] Characterization of Electrorefractive Effect in GaAs/AlGaAs FACQW Using Heterodyne Detection (2006)
  • Author(s): T. Arakawa, H. Itoh, T. Arima, N. Haneji, J.-H. Noh, and K. Tada
  • Organizer: The 11th OptoElectronics and Communication Conference(OECC2006)
  • Place of Presentation: Kaohsiung, Taiwan(5P11)
  • Year and Date: 2006-07-05
• [Book] ドライ・ウエットエッチング技術全集(第2章8節を担当, 相当) (2009)
  • Author(s): 荒川太郎(分担執筆)ほか33 名
  • Publisher: 技術情報協会出版
• [Book] ドライ・ウェットエッチング技術全集(第2章8節を担当) (2009)
  • Author(s): 荒川太郎(分担執筆)ほか33名
  • Total Pages: 13
  • Publisher: 技術情報協会出版
• [Book] Chapter 10 : Potential-Tailored Quantum Wells for High-Performance Optical Modulators/Switches, の分担執筆を担当 (2008)
  • Author(s): T. Arakawa and K. Tada
  • Publisher: Advances in Materials Research 9, Nano-and Micromaterials
• [Book] Nano-and Micromaterials(Editors: K. Ohno, M. Tanaka, J. Takeda, and Y. Kawazoe), Chapter 10: Potential-Tailored Quantum Wellsfor High-Performance Optical Modulator s/Switches (分担執筆) (2008)
  • Author(s): T. Arakawa
  • Total Pages: 12
  • Publisher: Springer
• [Patent(Industrial Property Rights)] 一方向性損失付加デバイス、一方向性 発振リングレーザ、および光アイソレータ (2008)
  • Inventor(s): 國分泰雄, 荒川太郎, 大澤和弘
  • Industrial Property Rights Holder: 横浜国立大学
  • Filing Date: 2008-08-29