A STUDY ON ENERGY LEVEL CHARACTERIZATION DEVICES FOR BIOLOGICAL MATERIALS BY ELECTRON RESPONSE OF METAL/MICRO-GAP/SEMICONDUCTOR STRUCTURES

• Project/Area Number: 18360148
• Research Category: Grant-in-Aid for Scientific Research (B)
• Allocation Type: Single-year Grants
• Section: 一般
• Research Field: Electronic materials/Electric materials
• Research Institution: Osaka University
• Principal Investigator: MORITA Mizuho Osaka University, 大学院・工学研究科, 教授 (50157905)
• Co-Investigator(Kenkyū-buntansha): FUKUI Kiichi 大阪大学, 工学研究科, 教授 (00311770) ; ARIMA Kenta 大阪大学, 工学研究科, 准教授 (10324807)
• Project Period (FY): 2006 – 2009
• Project Status: Completed (Fiscal Year 2009)
• Budget Amount: ¥17,500,000 (Direct Cost: ¥14,500,000、Indirect Cost: ¥3,000,000); Fiscal Year 2009: ¥2,600,000 (Direct Cost: ¥2,000,000、Indirect Cost: ¥600,000); Fiscal Year 2008: ¥5,200,000 (Direct Cost: ¥4,000,000、Indirect Cost: ¥1,200,000); Fiscal Year 2007: ¥5,200,000 (Direct Cost: ¥4,000,000、Indirect Cost: ¥1,200,000); Fiscal Year 2006: ¥4,500,000 (Direct Cost: ¥4,500,000)
• Keywords: シリコン / シリコン酸化膜 / 微小空隙 / 電子応答 / センシングデバイス

Research Abstract

The sensing of deoxyribonucleic acid solutions by capacitance-voltage measurements of a metal/micro-gap/semiconductor structure device has been demonstrated. The different concentrations of deoxyribonucleic acid solutions have been characterized from the change of the capacitance-voltage curve for the sensing device. A metal/insulator/gap/insulator/semiconductor structure device was sensitive to the ion concentration of the solution and had high sensitivity. It has been suggested that the change of capacitance-voltage characteristics reflects the change of the charge on the sensing silicon dioxide surface.

Research Products

• [Journal Article] Metal-Insulator-Gap-Insulator-Semiconductor Structure for Sensing D e v i c e s (2009)
  • Author(s): Takaaki HIROKANE, Hideaki HASHIMOTO, Daisuke KANZAKI, Shinichi URABE, Kenta ARIMA, Junichi UCHIKOSHI, Mizuho MORITA
  • Journal Title: ANALYTICAL SCIENCES 25(Peer-reviewed) Pages: 101-104
• [Journal Article] Metal-Insulator-Gap-Insulator-Semiconductor Structure for Sensing Devices (2009)
  • Author(s): Takaaki HIROKANE, Hideaki HASHIMOTO, Daisuke KANZAKI, Shinichi URABE, Kenta ARIMA, Junichi UCHIKOSHI and Mizuho MORITA
  • Journal Title: ANALYTICAL SCIENCES(Peer-reviewed) 25 Pages: 101-104
  • NAID: 10025209631
• [Journal Article] Characterization of Pinhole in Patterned Oxide Buried in Bonded Silicon-on-Insulator Wafers by Near-Infrared Scattering Topography and Transmission Microscopy (2008)
  • Author(s): Xing Wu, Junichi Uchikoshi, Takaaki Hirokane, Ryuta Yamada, Akihiro Takeuchi, Kenta Arima, Mizuho Morita
  • Journal Title: Journal of The Electrochemical Society 155(11)(Peer-reviewed)
• [Journal Article] Characterization of Patterned Oxide Buried in Bonded Silicon-on-Insulator Wafers by Near-Infrared Scattering Topography and Microscopy (2008)
  • Author(s): Xing WU, Junichi UCHIKOSHI, Takaaki HIROKANE, Ryuta YAMADA, Akihiro TAKEUCHI, Kenta ARIMA, Mizuho MORITA
  • Journal Title: Japanese Journal of Applied Physics 47(4)(Peer-reviewed.) Pages: 2511-2514
  • NAID: 10022549248
• [Journal Article] Sensing ofλDNA solutions by metal-gap-semiconductor devices (2008)
  • Author(s): Takaaki Hirokane, Daisuke Kanzaki, Hideaki Hashimoto, Shinichi Urabe, Kenta Arima, Junichi Uchikoshi, Mizuho Morita
  • Journal Title: Surface and Interface Analysis 40(Peer-reviewed.) Pages: 1131-1133
• [Journal Article] Sensing of λDNA solutions by metal-gap-semiconductor devices (2008)
  • Author(s): Takaaki Hirokane, Daisuke Kanzaki, Hideaki Hashimoto, Shinichi Urabe, Kenta Arima, Junichi Uchikoshi and Mizuho Morita
  • Journal Title: Surface and Interface Analysis(Peer-reviewed) 40 Pages: 1131-1133
• [Journal Article] Characterization of Tunneling Current through Ultrathin Silicon Dioxide Films by Different-Metal Gates Method (2008)
  • Author(s): Takaaki HIROKANE, Naoto YOSHII, Tatsuya OKAZAKI, Shinichi URABE, Kazuo NISHIMURA, Satoru MORITA, Kenta ARIMA, Junichi UCHIKOSHI, Mizuho MORITA
  • Journal Title: Japanese Journal of Applied Physics 47 Pages: 8317-8320
  • NAID: 40016346939
  • Peer Reviewed
• [Journal Article] Metal-Insulator-Gap-Insulator-Semiconductor Structure for Sensing Devices (2008)
  • Author(s): Takaaki HIROKANE, Hideaki HASHIMOTO Daisuke KANZAKI, Shinichi URABE Kenta ARIMA. Junichi UCHIKOSHI, Mizuho MORITA
  • Journal Title: ANALYTICAL SCIENCES 25 Pages: 101-104
  • NAID: 10025209631
  • Peer Reviewed
• [Journal Article] Metal-Insulator-Gap-Insulator-Semiconductor Structure for Biological Sensors (2008)
  • Author(s): Hideaki Hashimoto, Takaaki Hirokane, Daisuke Kanzaki, Shinichi Urabe, and Mizuho Morita
  • Journal Title: ECS Transactions 11(in press)
  • Peer Reviewed
• [Journal Article] Characterization of Void in Bonded Silicon-on-Insulator Wafers by Controlling Coherence Length of Light Source using Near-Infrared Microscope (2007)
  • Author(s): Noritaka AJARI, Junichi UCHIKOSHI, Takaaki HIROKANE, Kenta ARIMA, Mizuho MORITA
  • Journal Title: Japanese Journal of Applied Physics 46(4B)(Peer-reviewed.) Pages: 1994-1996
• [Journal Article] Photo current through SnO_2/SiC/p-Si(100) structures (2006)
  • Author(s): Syuhei Nishikawa, Hideaki Hashimoto, Motonori Chikamoto, Kosuke Horikoshi, Minoru Aoki, Kenta Arima, Junichi Uchikoshi, Mizuho Morita
  • Journal Title: Thin Solid Films 508 Pages: 385-388
• [Journal Article] Characterization of Void in Bonded SOI Wafers by Controlling Coherence Length of Near-Infrared Microscope (2006)
  • Author(s): Noritaka Ajari, Junichi Uchikoshi, Takaaki Hirokane, Kenta Arima, Mizuho Morita
  • Journal Title: Extended Abstracts of the 2006 International Conference on Solid State Devices and Materials Pages: 486-487
  • NAID: 10022545814
• [Journal Article] Photodetective Characteristics of Metal-Oxide-Semiconductor Tunneling Structure with Aluminum Grid Gate (2006)
  • Author(s): Hideaki Hashimoto, Ryuta Yamada, Kenta Arima, Junichi Uchikoshi, Mizuho Morita
  • Journal Title: Extended Abstracts of the 2006 International Conference on Solid State Devices and Materials Pages: 860-861
  • NAID: 10022546987
• [Journal Article] Liquid Sensing by Nano-Gap Device with Treated Surface (2006)
  • Author(s): Takaaki Hirokane, Hideaki Hashimoto, Daisuke Kanzaki, Tatsuya Takegawa, Satoru Morita, Shinichi Urabe, Kenta Arima, Junichi Uchikoshi, Mizuho Morita
  • Journal Title: Extended Abstracts of the 2006 International Conference on Solid State Devices and Materials Pages: 900-901
  • NAID: 10022547108
• [Journal Article] Metal-Gap-Semiconductor Sensing Devices for DNA Solutions (2006)
  • Author(s): Takaaki Hirokane, Hideaki Hashimoto, Daisuke Kanzaki, Shinichi Urabe, Mizuho Morita
  • Journal Title: Abstracts, 210th Meeting of The Electrochemical Society Pages: 1185-1185
• [Journal Article] Current-Voltage Characteristics of Gap Electrodes with λDNA Molecules on SiO_2/Si Substrate after Elongating Treatment (2006)
  • Author(s): Katsuhiro Hashimoto, Takamichi Hanada, Yasuhumi Ochi, Takaaki Hirokane, Shigeki Kawakami, Susumu Uchiyama, Kiichi Fukui, Kenta Arima, Junichi Uchikoshi, Mizuho Morita
  • Journal Title: Abstracts, 210th Meeting of The Electrochemical Society Pages: 2099-2099
• [Presentation] Direct immobilization of DNA oligomers onto an aminosilane-attached SiO2 surface (2009)
  • Author(s): Yoshifumi Okamoto, Takaaki Hirokane, Takashi Furukawa, Junichi Uchikoshi, Kenta Arima, Mizuho Morita
  • Organizer: Extended Abstracts of Second International Symposium on Atomically Controlled Fabrication Technology
  • Place of Presentation: Osaka(Not peer-reviewed.)
  • Year and Date: 2009-11-25
• [Presentation] Direct immobiliszation of DNA oligomers onto an aminosilane-attached SiO_2 surface (2009)
  • Author(s): Yoshifumi Okamoto, Takaaki Hirokane, Takashi Furukawa, Junichi Uchikoshi, Kenta Arima, Mizuho Morita
  • Organizer: Extended Abstracts of Second International Symposium on Atomicalluy Controlled Fabrication Technology
  • Place of Presentation: Suita, Osaka
  • Year and Date: 2009-11-25
• [Presentation] Electrical Detection of ExtendedλDNA Molecules with Gap Electrodes by Ultraviolet Radiation (2009)
  • Author(s): Takamichi Hanada, Yoshifumi Okamoto, Katsuhiro Hashimoto, Yasuhumi Ochi, Takaaki Hirokane, Shinichiro Kajiyama, Susumu Uchiyama, Kiichi Fukui, Kenta Arima, Junichi Uchikoshi, Mizuho Morita
  • Organizer: Extended Abstracts of First International Symposium on Atomically Controlled Fabrication Technology- Surface and Thin Film Processing-
  • Place of Presentation: Osaka(Not peer-reviewed.)
  • Year and Date: 2009-02-16
• [Presentation] Sensing of DNA solution with Metal-Gap-Insulator-Semiconductor Device, Extended Abstracts of First International Symposium on Atomically Controlled Fabrication Technology (2009)
  • Author(s): Takaaki Hirokane, Daisuke Kanzaki, Hideaki Hashimoto, Shinichi Urabe, Kenta Arima, Junichi Uchikoshi, Mizuho Morita
  • Organizer: - Surface and Thin Film Processing-
  • Place of Presentation: Osaka(Not peer-reviewed.)
  • Year and Date: 2009-02-16
• [Presentation] Sensing of DNA solution with Metal-Gap-Insulator-Semiconductor Device (2009)
  • Author(s): Takaaki Hirokane, Daisuke Kanzaki, Hideaki Hashimoto, Shinichi Urabe Kenta Arima, Junichi Uchikoshi, Mizuho Morita
  • Organizer: First International Symposium on Atomically Controlled Fabrication Technology
  • Place of Presentation: Osaka
  • Year and Date: 2009-02-16
• [Presentation] Sensing Device with Metal-Insulator-Gap-Insulator-Semiconductor for Biological Sensors (2007)
  • Author(s): Hideaki Hashimoto, Takaaki Hirokane, Daisuke Kanzaki, Shinichi Urabe, and Mizuho Morita
  • Organizer: 212th Meeting of The Electrochemical Society
  • Place of Presentation: Washington, DC
  • Year and Date: 2007-11-10
• [Presentation] Electrical Detection of Damage of ExtendedλDNA Molecules by Ultraviolet Radiation (2007)
  • Author(s): Takamichi Hanada, Katsuhiro Hashimoto, Yasuhumi Ochi, Takaaki Hirokane, Shinichiro Kajiyama, Susumu Uchiyama, Kiichi Fukui, Kenta Arima, Junichi Uchikoshi, Mizuho Morita
  • Organizer: Extended Abstracts of International 21st Century COE Symposium on Atomistic Fabrication Technology 2007
  • Place of Presentation: Osaka(Not peer-reviewed.)
  • Year and Date: 2007-10-15
• [Presentation] Sensing ofλDNA Solutions by Metal-Gap-Semiconductor Device (2007)
  • Author(s): Takaaki Hirokane, Daisuke Kanzaki, Hideaki Hashimoto, Shinichi Urabe, Mizuho Morita
  • Organizer: Extended Abstracts of International 21st Century COE Symposium on Atomistic Fabrication Technology 2007
  • Place of Presentation: Osaka(Not peer-reviewed.)
  • Year and Date: 2007-10-15
• [Presentation] Metal-Insulator-Gap-Insulator-Semicondu ctor Device for Biosensors (2007)
  • Author(s): Takaaki Hirokane, Hideaki Hashimoto, Daisuke Kanzaki, Shinichi Urabe, Kenta Arima, Junichi Uchikoshi, Mizuho Morita
  • Organizer: Extended Abstracts of International 21st Century COE Symposium on Atomistic Fabrication Technology 2007
  • Place of Presentation: Osaka(Not peer-reviewed.)
  • Year and Date: 2007-10-15
• [Presentation] Sensing Device with Metal-Insulator-Gap-Insulator- Semiconductor for Biological Sensors, Abstracts (2007)
  • Author(s): Hideaki Hashimoto, Takaaki Hirokane, Daisuke Kanzaki, Shinichi Urabe, Mizuho Morita
  • Organizer: 212th Meeting of The Electrochemical Society
  • Place of Presentation: Washington, DC(Not peer-reviewed.)
  • Year and Date: 2007-10-10
• [Presentation] Sensing Device with Metal-Insulator-Gap-Insulator-Semiconductor for Biological Sensors, Abstracts (2007)
  • Author(s): Hideaki Hashimoto, Takaaki Hirokane, Daisuke Kanzaki, Shinichi Urabe and Mizuho Morita
  • Organizer: 212th Meeting of The Electrochemical Society
  • Place of Presentation: Washington, DC(Not peer-reviewed)
  • Year and Date: 2007-10-10
• [Presentation] Current-Voltage Characteristics of Gap Electrodes withλDNA Molecules on SiO2/Si Substrate after Elongating Treatment, Abstracts (2006)
  • Author(s): Katsuhiro Hashimoto, Takamichi Hanada, Yasuhumi Ochi, Takaaki Hirokane, Shigeki Kawakami, Susumu Uchiyama, Kiichi Fukui, Kenta Arima, Junichi Uchikoshi, Mizuho Morita
  • Organizer: 210th Meeting of The Electrochemical Society
  • Place of Presentation: Cancun(Not peer-reviewed.)
  • Year and Date: 2006-11-01
• [Presentation] Metal-Gap-Semiconductor Sensing Devices for DNA Solutions, Abstracts (2006)
  • Author(s): Takaaki Hirokane, Hideaki Hashimoto, Daisuke Kanzaki, Shinichi Urabe, Mizuho Morita
  • Organizer: 210th Meeting of The Electrochemical Society
  • Place of Presentation: Not peer-reviewed.
  • Year and Date: 2006-10-31
• [Presentation] Current-Voltage Characteristics of Gap Electrodes with ExtendedλDNA Molecules (2006)
  • Author(s): Katsuhiro Hashimoto, Takamichi Hanada, Yasuhumi Ochi, Takaaki Hirokane, Shigeki Kawakami, Susumu Uchiyama, Kiichi Fukui, Kenta Arima, Junichi Uchikoshi, Mizuho Morita
  • Organizer: Extended Abstracts of International 21st Century COE Symposium on Atomistic Fabrication Technology
  • Place of Presentation: Osaka(Not peer-reviewed.)
  • Year and Date: 2006-10-19
• [Presentation] Metal-Gap-Semiconductor Device for Biosensors (2006)
  • Author(s): Takaaki Hirokane, Hideaki Hashimoto, Daisuke Kanzaki, Shinichi Urabe, Mizuho Morita
  • Organizer: Extended Abstracts of International 21st Century COE Symposium on Atomistic Fabrication Technology
  • Place of Presentation: Osaka(Not peer-reviewed.)
  • Year and Date: 2006-10-19
• [Presentation] Liquid Sensing by Nano-Gap Device with Treated Surface (2006)
  • Author(s): Takaaki Hirokane, Hideaki Hashimoto, Daisuke Kanzaki, Tatsuya Takegawa, Satoru Morita, Shinichi Urabe, Kenta Arima, Junichi Uchikoshi, Mizuho Morita
  • Organizer: Extended Abstracts of the 2006 International Conference on Solid State Devices and Materials
  • Place of Presentation: Yokohama(Not peer-reviewed.)
  • Year and Date: 2006-09-15
• [Remarks]
  • URL: http://www-pm.prec.eng.osaka-u.ac.jp/
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• [Patent(Industrial Property Rights)] 検出素子およびそれを用いた検出装置 (2007)
  • Inventor(s): 森田瑞穂, 廣兼孝亮
  • Industrial Property Rights Holder: 森田瑞穂
  • Industrial Property Number: 2007-248433
  • Filing Date: 2007-09-26
  • Acquisition Date: 2007-09-26
• [Patent(Industrial Property Rights)] 検出装置 (2007)
  • Inventor(s): 森田瑞穂
  • Industrial Property Rights Holder: 森田瑞穂
  • Filing Date: 2007-03-23
  • Acquisition Date: 2007-03-23
• [Patent(Industrial Property Rights)] 検出装置 (2007)
  • Inventor(s): 森田瑞穂
  • Industrial Property Rights Holder: 森田瑞穂
  • Acquisition Date: 2007-03-23