The control of conductivity of bulk GaN crystals which are grown by Na flux method.
Project/Area Number |
18360149
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Research Category |
Grant-in-Aid for Scientific Research (B)
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Allocation Type | Single-year Grants |
Section | 一般 |
Research Field |
Electronic materials/Electric materials
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Research Institution | Osaka University |
Principal Investigator |
MORI Yusuke Osaka University, Graduate School of Engineering, Professor (90252618)
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Co-Investigator(Kenkyū-buntansha) |
KITAOKA Yasuo Osaka University, Graduate school of engineaing, Division of Electrical Electronic and Information Engineering, Professor (70444560)
|
Project Period (FY) |
2006 – 2007
|
Project Status |
Completed (Fiscal Year 2007)
|
Budget Amount *help |
¥16,490,000 (Direct Cost: ¥15,200,000、Indirect Cost: ¥1,290,000)
Fiscal Year 2007: ¥5,590,000 (Direct Cost: ¥4,300,000、Indirect Cost: ¥1,290,000)
Fiscal Year 2006: ¥10,900,000 (Direct Cost: ¥10,900,000)
|
Keywords | GaN / Single crystal / Doping / Naフラックス / 高純度育成 / 不純物ドーピング / バルク / 低転位 |
Research Abstract |
The elements of impurities and the origins of impurities were investigated to control conductivity of GaN which were grown by Na flux method. The major impurity incorporated into crystals was turned out to be oxygen. The oxygen concentration in LPE-GaN was ranged from the order of 10^<18> to 10^<19> cm^<-3>. The origin of oxygen was successive corrosion of alumina crucible in the growth period. We searched materials for the crucible which can tolerate Ga-Na mixed metal at high temperature and found the yttrium aluminum garnet (YAG) and yttria to be strong enough for that system. The oxygen concentration in LPE-GaN could be reduced to the order of 10^<16> cm^<-3> using yttria crucible. As for the p-type dopants, it was clarified that Mg element can be doped in the LPE-GaN with the order of 10^<20> cm^<-3>, which is the almost same concentration that adopted in the current devices. Mg doping enabled to increase in the conductivity to the order of 10^6 Ω・cm. On the other hand, Li and Ge could reduce the conductivity to the order of 10^<-2> Ω・cm. Also, even in the Li, Ge or Mg doped system, large bulk GaN single crystal could be obtained by co-doping of carbon which could significantly suppress the growth of poly-crystals.
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Report
(3 results)
Research Products
(14 results)
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[Journal Article] The effect of thermal convection on the liquid phase epitaxy of GaN by the Na flux method.2007
Author(s)
R., Gejo, F., Kawamura, M., Kawahara, M., Yoshimura, Y., Kitaoka, Y., Mori, T., Sasaki
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Journal Title
Jpn. J. Appl. Phys Vol.46
Pages: 7689-7692
NAID
Description
「研究成果報告書概要(欧文)」より
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[Presentation] 炭素添加Na fluxを用いた大型低転位GaN単結晶の育成2007
Author(s)
M. Tanpo, S. Katsuike, Y. Kitano, M. Imade, N. Miyoshi, F. Kawamura, M. Yoshimura, Y. Kitaoka, Y. Mori, T. Sasaki
Organizer
第68回応用物理学会学術講演会
Place of Presentation
北海道
Year and Date
2007-09-04
Description
「研究成果報告書概要(和文)」より
Related Report
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[Presentation] 高純度環境でのNaフラックス法によるLPE-GaN単結晶育成2007
Author(s)
Y. Kitano, S. Katsuike, M. Tanpo, M. Imade, N. Miyoshi, F. Kawamura, M. Yoshimura, Y. Kitaoka, Y. Mori, T. Sasaki
Organizer
第68回応用物理学会学術講演会
Place of Presentation
北海道
Year and Date
2007-09-04
Description
「研究成果報告書概要(和文)」より
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[Presentation] Naフラックス法における成長速度向上に向けた取り組み2007
Author(s)
F. Kawamura, Y. Kitano, M. Tanpo, M. Imade, M. Yoshimura, Y. Kitaoka, T. Sasaki, Y. Mori
Organizer
第26回電子材料シンポジウム
Place of Presentation
滋賀
Year and Date
2007-07-05
Description
「研究成果報告書概要(和文)」より
Related Report
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[Presentation] Growth of the Full-Scale GaN Single Crystal Substrate Using Na Flux Method2007
Author(s)
F., Kawamura, Y., Kitano, M., Tanpo, N., Miyoshi, M., Imade, M., Yoshimura, Y., Kitaoka, T., Sasaki, Y., Mot
Organizer
7th International Conference of Nitride Semiconductors
Place of Presentation
Las Vegas
Description
「研究成果報告書概要(欧文)」より
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[Presentation] The Effect of Additive of Carbon into the Na Flux on the Growth of GaN Single Crystals2007
Author(s)
M., Tanpo, Y., Kitano, F., Kawamura, M., Yoshimura, Y., Kitaoka, Y., Mori, T., Sasaki
Organizer
7th International Conference of Nitride Semiconductors
Place of Presentation
Las Vegas
Description
「研究成果報告書概要(欧文)」より
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[Presentation] Some attempts for increasing the growth rate in the Na flux method2007
Author(s)
F., Kawamura, Y., Kitano, M., Tanpo, M., Imade, M., Yoshimura, Y., Kitaoka, T., Sasaki, Y., Mori
Organizer
26th Materials Research Symposium
Place of Presentation
Shiga
Description
「研究成果報告書概要(欧文)」より
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[Presentation] Growth of large GaN single crystals in carbon added Na flux method2007
Author(s)
M., Tanpo, S., Katsuike, Y., Kitano, M., Imade, N., Miyoshi, F., Kawamura, M., Yoshimura, Y., Kitaoka, Y., Mori, T., Sasaki
Organizer
68th The Japan society of applied physics
Place of Presentation
Hokkaido
Description
「研究成果報告書概要(欧文)」より
Related Report
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[Presentation] Growth of GaN single crystals in high purity conditions using Na flux method2007
Author(s)
Y., Kitano, S., Katsuike, M., Tanpo, M., Imade, N., Miyosbi, F., Kawamura, M., Yoshimura, Y., Kitaoka, Y., Mori, T., Sasaki
Organizer
68th The Japan society of applied physics
Place of Presentation
Hokkaido
Description
「研究成果報告書概要(欧文)」より
Related Report