| Budget Amount *help |
¥16,960,000 (Direct Cost: ¥14,800,000、Indirect Cost: ¥2,160,000)
Fiscal Year 2009: ¥2,990,000 (Direct Cost: ¥2,300,000、Indirect Cost: ¥690,000)
Fiscal Year 2008: ¥3,250,000 (Direct Cost: ¥2,500,000、Indirect Cost: ¥750,000)
Fiscal Year 2007: ¥3,120,000 (Direct Cost: ¥2,400,000、Indirect Cost: ¥720,000)
Fiscal Year 2006: ¥7,600,000 (Direct Cost: ¥7,600,000)
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| Research Abstract |
Growth of dislocation-free GaN on Si substrates is investigated for realizing long-life optical devices in opto-electronic integrated circuits. Micro-channel Epitaxy (MCE) is used to reduce the dislocation density. Selective growth and lateral growth of GaN are necessary for MCE. Consequently, excellent selective growth in wide temperature range of between 600-850℃ and preliminary MCE were successfully achieved using NH_3-based metal organic chemical vapor deposition, though the width of the lateral growth is as long as 1μm.
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