Study of High-Density Electron Transport by Three-Dimensional Particle-Based Simulations under Nano-Scale Devices

• Project/Area Number: 18360160
• Research Category: Grant-in-Aid for Scientific Research (B)
• Allocation Type: Single-year Grants
• Section: 一般
• Research Field: Electron device/Electronic equipment
• Research Institution: University of Tsukuba
• Principal Investigator: SANO Nobuyuki University of Tsukuba, 大学院・数理物質科学研究科, 教授 (90282334)
• Research Collaborator: 上地 忠良 筑波大学, 大学院・数理物質科学研究科, 博士後期課程3年 ; 福井 貴之 筑波大学, 大学院・数理物質科学研究科, 博士前期課程2年 ; 中西 洸平 筑波大学, 大学院・数理物質科学研究科, 博士前期課程1年
• Project Period (FY): 2006 – 2008
• Project Status: Completed (Fiscal Year 2008)
• Budget Amount: ¥15,610,000 (Direct Cost: ¥14,500,000、Indirect Cost: ¥1,110,000); Fiscal Year 2008: ¥2,470,000 (Direct Cost: ¥1,900,000、Indirect Cost: ¥570,000); Fiscal Year 2007: ¥2,340,000 (Direct Cost: ¥1,800,000、Indirect Cost: ¥540,000); Fiscal Year 2006: ¥10,800,000 (Direct Cost: ¥10,800,000)
• Keywords: 電子デバイス / 集積回路 / 半導体デバイス / デバイス・シミュレーション / ボルツマン輸送方程式 / モンテカルロ法 / クーロン相互作用 / 電子輸送 / 計算物理 / 半導体物性

Research Abstract

電子間および電子不純物間クーロン相互作用を3次元粒子シミュレーションに高精度に導入したうえで、現実的なデバイス構造のデバイス・シミュレータを構築した。高濃度ソースおよびドレインでの集団運動(プラズマ波の励起)、電子の縮退状態、バンドテール効果とホットエレクトロン化、が正しくシミュレートできていること検証することで、ソース/ドレイン領域まで含めた構造でのモンテカルロ・シミュレータの動作の正当性を検証した。

Research Products

• [Journal Article] Three-dimensional Monte Carlo Simulation of Electron Transport in Si Including Full Coulomb Interaction (2008)
  • Author(s): T.Fukui, T.Uechi, and N.Sano
  • Journal Title: Appl. Phys. Exp 1
  • NAID: 10025080337
  • Peer Reviewed
• [Journal Article] Schottky Barrier MOSFETs as Resonant Tunneling Devices (2008)
  • Author(s): S.Toriyama and N.Sano
  • Journal Title: J. Comp. Electron 7 Pages: 471-474
  • NAID: 10022548097
  • Peer Reviewed
• [Journal Article] 3D Monte Carlo Analysis of potential Fluctuations under High Electron Concentrations (2008)
  • Author(s): T.Uechi, T.Fukui, and N.Sano
  • Journal Title: J. Comp. Electron 7 Pages: 240-243
  • Peer Reviewed
• [Journal Article] Consistency of Boundary Conditions in Nonequilibrium Green's Function Simulations (2008)
  • Author(s): S.Sato, and N.Sano
  • Journal Title: J. Comp. Electron 7 Pages: 301-304
  • Peer Reviewed
• [Journal Article] 3D Monte Carlo Simulations including Full Coulomb Interaction under High Electron Concentration Regimes (2008)
  • Author(s): T.Uechi, T.Fukui, and N.Sano
  • Journal Title: Phys.stat.sol.(c) 5 Pages: 102-106
  • Peer Reviewed
• [Journal Article] 3D Monte Carlo Analysis of potential Fluctuations under High Electron Concentrations (2008)
  • Author(s): Tadayoshi Uechi, Takayuki Fukui, and Nobuyuki Sano
  • Journal Title: Journal of Computational Electronics 7 Pages: 240-243
  • Peer Reviewed
• [Journal Article] Schottky Barrier MOSFETs as Resonant Tunneling Devices (2008)
  • Author(s): Shuichi Toriyama and Nobuyuki Sano
  • Journal Title: Journal of Computational Electronics 7 Pages: 471-474
  • NAID: 10022548097
  • Peer Reviewed
• [Journal Article] Three-dimensional Monte Carlo Simulation of Electron Transport in SiIncluding Full Coulomb Interaction (2008)
  • Author(s): Takayuki Fukui, Tadayoshi Uechi, and Nobuyuki Sano
  • Journal Title: Applied Physics Express 1
  • NAID: 10025080337
  • Peer Reviewed
• [Journal Article] 3D Monte Carlo Analysis of potential Fluctuations under High Electron Concentrations (2008)
  • Author(s): Tadayoshi Uechi, Takayuki Fukui, and Nobuyuki Sano
  • Journal Title: J. Comp. Phys. 7(in press)
  • Peer Reviewed
• [Journal Article] Schottky Barrier MOSFETs as Resonant Tunneling Devices (2008)
  • Author(s): Shuichi Toriyama and Nobuyuki Sano
  • Journal Title: J. Comp. Phys. 7(in press)
  • NAID: 10022548097
  • Peer Reviewed
• [Journal Article] Consistency of Boundary Conditions in Nonequilibrium Green's Function Simulations (2008)
  • Author(s): Suguru Sato and Nobuyuki Sano
  • Journal Title: J. Comp. Phys. 7(in press)
  • Peer Reviewed
• [Journal Article] ナノスケール半導体構造における準弾道電子輸送 (2007)
  • Author(s): 佐野伸行
  • Journal Title: 応用物理学会誌 10月号 Pages: 1135-1141
  • NAID: 10019956738
  • Peer Reviewed
• [Journal Article] Kinetic Study of Quasi-Ballistic Electron Transport in Nanoscale Semiconductor Devices (2006)
  • Author(s): Nobuyuki Sano
  • Journal Title: Electronic Communications in Japan 88 Pages: 1-9
  • NAID: 10016599142
• [Journal Article] Detailed Balance in Quasi-Ballistic Electron Transport under Nanoscale Device Structures (2006)
  • Author(s): Hiroyuki Kusaka
  • Journal Title: International Conference on Solid State Materials and Devices (SSDM-2006) Pages: 356-357
• [Journal Article] Device Simulation of Random Dopant Effects in Ultra- small MOSFETs Based on Advanced Physical Models (2006)
  • Author(s): Shuichi Toriyama
  • Journal Title: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD-2006) Pages: 145-146
• [Journal Article] Hot Electrons Associated with the Long-Range Coulomb Interaction under the High-Density Regime (2006)
  • Author(s): Tadayoshi Uechi
  • Journal Title: 2006 VLSI-TSA Technology Symposium (VLSI-TSA) Pages: 141-142
• [Presentation] Impact of the Coulomb Interaction on Nano-scale Device Characteristics : A Monte Carlo Study (2009)
  • Author(s): N.Sano
  • Organizer: IEEE EDS Mini-colloquium for Nano CMOS and Nanowire
  • Place of Presentation: 東工大, 横浜市
  • Year and Date: 2009-02-21
• [Presentation] Impact of the Coulomb Interaction on Nano-scale Device Characteristics: A Monte Carlo Study (2009)
  • Author(s): Nobuyuki Sano
  • Organizer: IEEE EDS Mini-colloquium for Nano-CMOS and Nano-wire
  • Place of Presentation: Tokyo Inst. Tech, Yokohama
  • Year and Date: 2009-02-21
• [Presentation] 3D Monte Carlo Simulations of Nano-scale Devices : Impact of Coulomb Interaction on Device Characteristics (2008)
  • Author(s): N.Sano, T.Uechi, and T.Fukui
  • Organizer: Technical Seminar, International Conference on Solid State Materials and Devices (SSDM-2008)
  • Place of Presentation: Tsukuba
  • Year and Date: 2008-09-23
• [Presentation] Impacts of Random Dopant Fluctuation on Transient Characteristics in CMOS Inverters : A Device Simulation Study (2008)
  • Author(s): S.Toriyama, K.Matsuzawa, and N.Sano
  • Organizer: International Conference on Solid State Materials and Devices (SSDM-2008)
  • Place of Presentation: Tsukuba (Proc. SSDM, pp.892-893 (2008))
• [Presentation] Effects of Gate-Edge Metamorphoses (GEM) on Device Characteristics of Scaled MOSFETs (2007)
  • Author(s): T.Yamada and N.Sano
  • Organizer: 2007 International Semiconductor Device Research Symposium (ISDRS 2007)
  • Place of Presentation: College Park (Proc. ISDRS, p.WP8-01 (2007))
• [Presentation] 3D Monte Carlo Analysis ofpotential Fluctuations under High Electron Concentrations (2007)
  • Author(s): T.Uechi, T.Fukui, and N.Sano
  • Organizer: International Workshop on Computational Electronics (IWCE-12)
  • Place of Presentation: Amherst (Proc. IWCE, pp.128-129 (2007))
• [Presentation] Scaling Dependence of Electron Transport in Nano-scale Shottky Barrier MOSFETs (2007)
  • Author(s): S.Toriyama and N.Sano
  • Organizer: International Workshop on Computational Electronics (IWCE-12)
  • Place of Presentation: Amherst (Proc. IWCE, pp.141-142 (2007))
• [Presentation] Electron Transport Simulations Including Full Coulomb Interaction in Si (2007)
  • Author(s): T.Fukui, T.Uechi, and N.Sano
  • Organizer: International Workshop on Computational Electronics (IWCE-12)
  • Place of Presentation: Amherst (Proc. IWCE, pp.102-103 (2007))
• [Presentation] Consistency of Boundary Conditions in Nonequilibrium Green's Function Simulations (2007)
  • Author(s): S.Sato, H.Kusaka, and N.Sano
  • Organizer: International Workshop on Computational Electronics (IWCE-12)
  • Place of Presentation: Amherst (Proc. IWCE, pp.102-103 (2007))
• [Presentation] Schottky Barrier MOSFETs as Resonant Tunneling Devices (2007)
  • Author(s): S.Toriyama, and N.Sano
  • Organizer: International Conference on Solid State Materials and Devices (SSDM-2007)
  • Place of Presentation: Tsukuba (Proc. SSDM, pp.48-49 (2007))
• [Presentation] 3D Monte Carlo Simulations including Full Coulomb Interaction under High Electron Concentration Regimes (2007)
  • Author(s): T.Uechi, T.Fukui, and N.Sano
  • Organizer: 15-th International Conference on Nonequilibrium Carrier Transport in Semiconductors (HCIS-15)
  • Place of Presentation: Tokyo (Proc. HCIS-15, p.89 (2007))
• [Presentation] 3D Monte Carlo Simulations including Full Coulomb Interaction under High Electron Concentration Regimes (2007)
  • Author(s): Takayuki Fukui, Tadayoshi Uechi, and Nobuyuki Sano
  • Organizer: 15-th International Conference on Nonequilibrium Carrier Transport in Semiconductors(HCIS-15)
  • Place of Presentation: Tokyo, Japan
• [Presentation] Detailed Balance in Quasi-Ballistic Electron Transport under Nanoscale Device Structures (2006)
  • Author(s): H.Kusaka and N.Sano
  • Organizer: International Conference on Solid State Materials and Devices (SSDM-2006)
  • Place of Presentation: Yokohama (Proc. SSDM, pp.356-357 (2006))
• [Presentation] Device Simulation of Random Dopant Effects in Ultra- small MOSFETs Based on Advanced Physical Models (2006)
  • Author(s): S.Toriyama, D.Hagishima, K.Matsuzawa and N.Sano
  • Organizer: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD-2006)
  • Place of Presentation: Montley (Proc. SISPAD, pp.145-146 (2006))
• [Presentation] Hot Electrons Associated with the Long-Range Coulomb Interaction under the High-Density Regime (2006)
  • Author(s): T.Uechi and N.Sano
  • Organizer: 2006 VLSI-TSA Technology Symposium
  • Place of Presentation: Hsinshu, Taiwan (Proc. 2006 VLSI-TSA, pp.141-142 (2006))
• [Remarks]
  • URL: http://hermes.esys.tsukuba.ac.jp/