Developments of new complex materials using mime and interface diffusion of the supersaturated alloy elements in thin films
Project/Area Number |
18360324
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Research Category |
Grant-in-Aid for Scientific Research (B)
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Allocation Type | Single-year Grants |
Section | 一般 |
Research Field |
Composite materials/Physical properties
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Research Institution | Kyoto University |
Principal Investigator |
ITO Kazuhiro (2007) Kyoto University, Graduate School of Engineering Dept of Materials Srience and Engineering, Associate Prof. (60303856)
村上 正紀 (2006) 京都大学, 工学研究科, 教授 (70229970)
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Co-Investigator(Kenkyū-buntansha) |
TSUKIMOTO Susumu Kyoto Univ., Graduate School of Engineering, Dept of Materials Science and Engineering, Assistant Prof (50346087)
伊藤 和博 京都大学, 工学研究科, 助教授 (60303856)
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Project Period (FY) |
2006 – 2007
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Project Status |
Completed (Fiscal Year 2007)
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Budget Amount *help |
¥15,900,000 (Direct Cost: ¥14,100,000、Indirect Cost: ¥1,800,000)
Fiscal Year 2007: ¥7,800,000 (Direct Cost: ¥6,000,000、Indirect Cost: ¥1,800,000)
Fiscal Year 2006: ¥8,100,000 (Direct Cost: ¥8,100,000)
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Keywords | Thin Films / Cu Interconnects / Self-formation / Ohmic Contacts / SiC / 表皮効果 |
Research Abstract |
Thin Ti-rich diffusion barrier layers were found to be formed at the interface between Cu(Ti) films and SiO_2/Si substrates after annealing at elevated temperatures. This technique was called "self-formation of the diffusion barrier," which is attractive for fabrication of ultra-large scale integrated (ULSI) interconnects. Furthermore, we investigated the applicability of this technique to Cu(Ti) alloy films which were deposited on the four low dielectric constant (low-k) dielectric layers which are potential dielectric layers of future ULSI-Si devices. The microstructures were analyzed by transmission electron microscopy (TEM) and secondary ion mass spectrometry (SIMS), and correlated with the electrical properties of the Cu(Ti) films. It was concluded that the Ti-rich interface layers were formed in all the Cu(Ti)/dielectric-layer samples. The primary factor to control composition of the self-formed Ti-rich interface layers was the C concentration in the dielectric layers rather than the formation enthalpy of the Ti compounds (TiC and TiSi). Crystalline TiC was formed on the dielectric layers with a C concentration higher than 17 at.%.
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Report
(3 results)
Research Products
(44 results)
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[Journal Article] Self-formation of Ti-rich interfacial layers at Cu(Ti)/low-k interfaces2008
Author(s)
K., Kohama, K., Ito, S., Tsukimoto, K., Mori, K., Maekawa, M., Murakami
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Journal Title
MRS Proceedings (in press)
Description
「研究成果報告書概要(欧文)」より
Related Report
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[Journal Article] Simultaneous formation of n- and p-type ohmic contacts to 4H-SiC using the binary Ni/A1 system2008
Author(s)
K., Ito, T., Onishi, H., Taloda, S., Tsukimoto, M., Konno, Y., Suzuki, M., Morakami
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Journal Title
MRS Proceedings (in press)
Description
「研究成果報告書概要(欧文)」より
Related Report
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[Journal Article] Fabrication of Cu(Ti) alloy interconnects with self-formation of thin barrier metal layers using a high-pressure annealing process2007
Author(s)
S., Tsukirootu, T., Onishi, Klin, M., Konno, T., Yaguchi, Kamino, M., Mtuakami
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Journal Title
Journal of Electronic Materials 36
Pages: 1658-1661
Description
「研究成果報告書概要(欧文)」より
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[Journal Article] Self formation of ultra-thin barrier layers in Cu(Ti) alloy interconnects (in Japanease)2006
Author(s)
S., Tsukimoto, T., Onisli, K., Itn, M., Mutakami, M., Kaono, T., Yaguchi, T., Kamino
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Journal Title
Materia Japan 45
Pages: 879-879
Description
「研究成果報告書概要(欧文)」より
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[Presentation] Self-formation of Ti-rich layers at Cu(TO/low-k interfaces2008
Author(s)
K., Kohama, K., Ito, S., Thukimoto, K., Mori, K., Maekawa, M., Murakami
Organizer
2008 MRS Spring Meeting
Place of Presentation
Moscone West and San Francisco Marriott
Year and Date
2008-03-26
Description
「研究成果報告書概要(欧文)」より
Related Report
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[Presentation] Simultaneous formation of n- and p-type ohmic contacts to 4H-SiC using the binary Ni/AI system2008
Author(s)
K., Ito, T., Onishi, H., Takeda, Sakukimoto, M., Kceno, Y., Suzuki, M., Muraliami
Organizer
2008 MRS Spring Meeting
Place of Presentation
Moscone West and San Francisco Marriott
Year and Date
2008-03-26
Description
「研究成果報告書概要(欧文)」より
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[Presentation] Simultaneous formation of n- and p-type Ni-Al ohmic contacts to 4H-SiC2007
Author(s)
H., Takeda, T., Onishi, K., Ito, S., Tsukimoto, M., Murakami
Organizer
Japan Institute of Metals 2007 Anneal, Meeting
Place of Presentation
Gifu Univ
Year and Date
2007-09-20
Description
「研究成果報告書概要(欧文)」より
Related Report
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[Presentation] Resistivity reduction of Cuinterconnects2007
Author(s)
K. Ito, S. Tsukimoto, M. Moriyama and M. Murakami
Organizer
9th International Workshop on Stress-Induced Phenomena in Metallization
Place of Presentation
ぱるるプラザ京都
Year and Date
2007-04-05
Description
「研究成果報告書概要(和文)」より
Related Report
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[Presentation] Resistivity reduction of Cu interconnects2007
Author(s)
K., Ito, S., Tsukimoto, M., Moriyama, M., Murakami
Organizer
9th International Workshop on Stress -Induced Phenomena in Metallization
Place of Presentation
PaRuRu Plaza Kyoto
Year and Date
2007-04-05
Description
「研究成果報告書概要(欧文)」より
Related Report
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