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Developments of new complex materials using mime and interface diffusion of the supersaturated alloy elements in thin films

Research Project

Project/Area Number 18360324
Research Category

Grant-in-Aid for Scientific Research (B)

Allocation TypeSingle-year Grants
Section一般
Research Field Composite materials/Physical properties
Research InstitutionKyoto University

Principal Investigator

ITO Kazuhiro (2007)  Kyoto University, Graduate School of Engineering Dept of Materials Srience and Engineering, Associate Prof. (60303856)

村上 正紀 (2006)  京都大学, 工学研究科, 教授 (70229970)

Co-Investigator(Kenkyū-buntansha) TSUKIMOTO Susumu  Kyoto Univ., Graduate School of Engineering, Dept of Materials Science and Engineering, Assistant Prof (50346087)
伊藤 和博  京都大学, 工学研究科, 助教授 (60303856)
Project Period (FY) 2006 – 2007
Project Status Completed (Fiscal Year 2007)
Budget Amount *help
¥15,900,000 (Direct Cost: ¥14,100,000、Indirect Cost: ¥1,800,000)
Fiscal Year 2007: ¥7,800,000 (Direct Cost: ¥6,000,000、Indirect Cost: ¥1,800,000)
Fiscal Year 2006: ¥8,100,000 (Direct Cost: ¥8,100,000)
KeywordsThin Films / Cu Interconnects / Self-formation / Ohmic Contacts / SiC / 表皮効果
Research Abstract

Thin Ti-rich diffusion barrier layers were found to be formed at the interface between Cu(Ti) films and SiO_2/Si substrates after annealing at elevated temperatures. This technique was called "self-formation of the diffusion barrier," which is attractive for fabrication of ultra-large scale integrated (ULSI) interconnects. Furthermore, we investigated the applicability of this technique to Cu(Ti) alloy films which were deposited on the four low dielectric constant (low-k) dielectric layers which are potential dielectric layers of future ULSI-Si devices. The microstructures were analyzed by transmission electron microscopy (TEM) and secondary ion mass spectrometry (SIMS), and correlated with the electrical properties of the Cu(Ti) films. It was concluded that the Ti-rich interface layers were formed in all the Cu(Ti)/dielectric-layer samples. The primary factor to control composition of the self-formed Ti-rich interface layers was the C concentration in the dielectric layers rather than the formation enthalpy of the Ti compounds (TiC and TiSi). Crystalline TiC was formed on the dielectric layers with a C concentration higher than 17 at.%.

Report

(3 results)
  • 2007 Annual Research Report   Final Research Report Summary
  • 2006 Annual Research Report
  • Research Products

    (44 results)

All 2008 2007 2006

All Journal Article (21 results) (of which Peer Reviewed: 8 results) Presentation (21 results) Patent(Industrial Property Rights) (2 results)

  • [Journal Article] Self-formation of Ti-rich interfacial layers at Cu(Ti)/low-k interfaces2008

    • Author(s)
      K. Kohama, K. Ito, S. Tsukimoto, K. Mori, K. Maekawa and M. Murakami
    • Journal Title

      MRS Proceedings (in press)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2007 Final Research Report Summary
    • Peer Reviewed
  • [Journal Article] Simultaneous formation of n-and p-type ohmic contacts to 4H-SiC using the binary Ni/Al system2008

    • Author(s)
      K. Ito, T. Onishi, H. Takeda, S. Tsukimoto, M. Konno, Y. Suzuki and M. Murakami
    • Journal Title

      MRS Proceedings (in press)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2007 Final Research Report Summary
    • Peer Reviewed
  • [Journal Article] Self-formation of Ti-rich interfacial layers at Cu(Ti)/low-k interfaces2008

    • Author(s)
      K., Kohama, K., Ito, S., Tsukimoto, K., Mori, K., Maekawa, M., Murakami
    • Journal Title

      MRS Proceedings (in press)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2007 Final Research Report Summary
  • [Journal Article] Simultaneous formation of n- and p-type ohmic contacts to 4H-SiC using the binary Ni/A1 system2008

    • Author(s)
      K., Ito, T., Onishi, H., Taloda, S., Tsukimoto, M., Konno, Y., Suzuki, M., Morakami
    • Journal Title

      MRS Proceedings (in press)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2007 Final Research Report Summary
  • [Journal Article] Effect of annealing ambient on self-formation mechanism of diffusion barrier layers used in Cu(Ti)interconnects2007

    • Author(s)
      S. Tsukimoto, T. Kabe, K. Ito and M. Murakami
    • Journal Title

      Journal of Electronic Materials 36

      Pages: 258-265

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2007 Final Research Report Summary
    • Peer Reviewed
  • [Journal Article] Effects of substrate materials on self-formation of Ti-rich interface layers in Cu(Ti)alloy films2007

    • Author(s)
      K. Ito, S. Tsukimoto, T. Kabe, K. Tada and M. Murakami
    • Journal Title

      Journal of Electronic Materials 36

      Pages: 606-613

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2007 Final Research Report Summary
    • Peer Reviewed
  • [Journal Article] Resistivity reduction of Cu interconnects2007

    • Author(s)
      K. Ito, S. Tsukimoto, M. Moriyama and M. Murakami
    • Journal Title

      Stress-Induced Phenomena in Metallization, AIP Conference Proceedings 945

      Pages: 1-10

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2007 Final Research Report Summary
    • Peer Reviewed
  • [Journal Article] Fabrication of Cu(Ti)alloy interconnects with self-formation of thin barrier metal layers using a high-pressure annealing process2007

    • Author(s)
      S. Tsukimoto, T. Onishi, K. Ito, M. Konno, T. Yaguchi, T. Kamino and M. Murakami
    • Journal Title

      Journal of Electronic Materials 36

      Pages: 1658-1661

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2007 Final Research Report Summary
    • Peer Reviewed
  • [Journal Article] Effect of annealing ambient on self-formation mechanism of diffusion barrier layers used in Cu(Ti) interconnects2007

    • Author(s)
      S., Tsukimoto, T., Kabe, K., Ito, M., Murakami
    • Journal Title

      Journal of Electronic Materials 36

      Pages: 258-265

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2007 Final Research Report Summary
  • [Journal Article] Effects of substrate materials on self-formation of Ti-rich interface layers in Cu(Ti) alloy films2007

    • Author(s)
      K., Ito, S., Tsukimoto, T., Kabe, K., Tada, M., Murakami
    • Journal Title

      Journal of Electronic Materials 36

      Pages: 606-613

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2007 Final Research Report Summary
  • [Journal Article] Resistivity reduction of Cu interconnects2007

    • Author(s)
      K., Ito, S., Tsukimoto, M., Moriyama, M., Murakami
    • Journal Title

      AIP Conference Proceedings 945

      Pages: 1-10

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2007 Final Research Report Summary
  • [Journal Article] Fabrication of Cu(Ti) alloy interconnects with self-formation of thin barrier metal layers using a high-pressure annealing process2007

    • Author(s)
      S., Tsukirootu, T., Onishi, Klin, M., Konno, T., Yaguchi, Kamino, M., Mtuakami
    • Journal Title

      Journal of Electronic Materials 36

      Pages: 1658-1661

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2007 Final Research Report Summary
  • [Journal Article] Resistivity reduction of Cu interconnects2007

    • Author(s)
      K., Ito, S. Tsukimoto, M. Moriyama and M. Murakami
    • Journal Title

      Stress-Induced Phenomena in Metallization, AIP Conference Proceedings 945

      Pages: 1-10

    • Related Report
      2007 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Fabrication of Cu (Ti) alloy interconnects with self-formation of thin barrier metal layers using a high-2007

    • Author(s)
      S. Tsukimoto, T. Onishi, K. Ito, M. Konno, T. Yaguchi, T. Kamino
    • Journal Title

      Journa of Electronic Materials 36

      Pages: 1658-1661

    • Related Report
      2007 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Self-formation of Ti-rich interface layers in Cu(Ti) alloy films on various substrates2007

    • Author(s)
      K.Ito, S.Tsukimoto, T.Kabe, K.Tada, M.Murakami
    • Journal Title

      Journal of Electronic Materials

    • Related Report
      2006 Annual Research Report
  • [Journal Article] Self-formation of Ti-rich Interfacial Layers in Cu(Ti) Alloy Film2007

    • Author(s)
      K.Ito, S.Tsukimoto, M.Murakami
    • Journal Title

      Japanese Journal of Applied Physics 46

    • NAID

      10022547534

    • Related Report
      2006 Annual Research Report
  • [Journal Article] Effect of annealing ambient on self-formation mechanism of diffusion barrier layers used in Cu(Ti) interconnects2007

    • Author(s)
      S.Tsukimoto, T.Kabe, K.Ito, M.Murakami
    • Journal Title

      Journal of Electronic Materials

    • Related Report
      2006 Annual Research Report
  • [Journal Article] Reduction of Electrical Resistivity of Cu Interconnects2007

    • Author(s)
      M.Murakami, M.Moriyama, S.Tsukimoto, K.Ito, T.Onichi
    • Journal Title

      Extraction, Processing, Structure and Properties Proceedings on Electronic. Maenetic and Photonic Materials Division Symposium

      Pages: 1-9

    • Related Report
      2006 Annual Research Report
  • [Journal Article] Cu(Ti)合金微細配線における極薄バリア層の自己組織形成2006

    • Author(s)
      着本 享、大西隆、伊藤 和博、村上 正紀、今野充、矢口紀恵、上野武志
    • Journal Title

      日本金属学会会報(まてりあ) 45

      Pages: 879-879

    • NAID

      10018421961

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2007 Final Research Report Summary
  • [Journal Article] Self formation of ultra-thin barrier layers in Cu(Ti) alloy interconnects (in Japanease)2006

    • Author(s)
      S., Tsukimoto, T., Onisli, K., Itn, M., Mutakami, M., Kaono, T., Yaguchi, T., Kamino
    • Journal Title

      Materia Japan 45

      Pages: 879-879

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2007 Final Research Report Summary
  • [Journal Article] Cu(Ti)合金微細配線における極薄バリア層の自己組織形成2006

    • Author(s)
      着本 享, 大西隆, 伊藤 和博, 村上 正紀, 今野充, 矢口紀恵, 上野
    • Journal Title

      日本金属学会会報(まてりあ) 45

      Pages: 879-879

    • NAID

      10018421961

    • Related Report
      2006 Annual Research Report
  • [Presentation] 低濃度Cu(TD合金薄膜における自己組織化拡散バリア層形成反応の基板依存性2008

    • Author(s)
      小濱和之, 佐藤大樹, 伊藤和博, 他
    • Organizer
      日本金属学会
    • Place of Presentation
      武蔵工業大学
    • Year and Date
      2008-03-28
    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2007 Final Research Report Summary
  • [Presentation] Effect of substrates on self-formation of barrier layers in low Ti content Cu(Ti)/Si samples2008

    • Author(s)
      K., Kohama, T., Sato, K., Ito
    • Organizer
      Japan Institute of Metals 2008 Anneal, Meeting
    • Place of Presentation
      Musashi Institute of Technology
    • Year and Date
      2008-03-28
    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2007 Final Research Report Summary
  • [Presentation] 低濃度Cu(Ti)合金薄膜における自己組織化拡散バリア層形成反応の基板依存性2008

    • Author(s)
      小濱和之, 佐藤大樹, 伊藤和博, 着本享, 他
    • Organizer
      日本金属学会
    • Place of Presentation
      武蔵工業大学
    • Year and Date
      2008-03-28
    • Related Report
      2007 Annual Research Report
  • [Presentation] Self-formation of Ti-rich layers at Cu(Ti)/low-k interfaces2008

    • Author(s)
      K. Kohama, K. Ito, S. Tsukimoto, K. Mori, K. Maekawa and M. Murakami
    • Organizer
      2008 Materials Research Society Spring Meeting
    • Place of Presentation
      Moscone West and San Francisco Marriott
    • Year and Date
      2008-03-26
    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2007 Final Research Report Summary
  • [Presentation] Simultaneous formation of n-and p-type ohmic contacts to 4H-SiC using the binary Ni/Al system2008

    • Author(s)
      K. Ito, T. Onishi, H. Takeda, S. Tsukimoto, M. Konno, Y. Suzuki and M. Murakami
    • Organizer
      2008 Materials Research Society Spring Meeting
    • Place of Presentation
      Moscone West and San Francisco Marriott
    • Year and Date
      2008-03-26
    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2007 Final Research Report Summary
  • [Presentation] Self-formation of Ti-rich layers at Cu(TO/low-k interfaces2008

    • Author(s)
      K., Kohama, K., Ito, S., Thukimoto, K., Mori, K., Maekawa, M., Murakami
    • Organizer
      2008 MRS Spring Meeting
    • Place of Presentation
      Moscone West and San Francisco Marriott
    • Year and Date
      2008-03-26
    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2007 Final Research Report Summary
  • [Presentation] Simultaneous formation of n- and p-type ohmic contacts to 4H-SiC using the binary Ni/AI system2008

    • Author(s)
      K., Ito, T., Onishi, H., Takeda, Sakukimoto, M., Kceno, Y., Suzuki, M., Muraliami
    • Organizer
      2008 MRS Spring Meeting
    • Place of Presentation
      Moscone West and San Francisco Marriott
    • Year and Date
      2008-03-26
    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2007 Final Research Report Summary
  • [Presentation] Self-formation of Ti-rich layers at Cu (Ti)/low-k interfaces2008

    • Author(s)
      K. Kohama, K. Ito, S. Tsukimoto, K. Mori. K. Maekawa and M. Murakami
    • Organizer
      Materials Science Society
    • Place of Presentation
      Moscone West and San Francisco Marriott
    • Year and Date
      2008-03-26
    • Related Report
      2007 Annual Research Report
  • [Presentation] Simultaneous formation of n- and p-type ohmic contacts to 4H-SiC using the binary Ni/Al system2008

    • Author(s)
      K. Ito, T. Onishi, H. Takeda, S. Tsukimoto, M. Konno, Y. Suzuki
    • Organizer
      Materials Science Society
    • Place of Presentation
      Moscone West and San Francisco Marriott
    • Year and Date
      2008-03-26
    • Related Report
      2007 Annual Research Report
  • [Presentation] Cu(Ti)合金薄膜における自己組織化バリア層の形成に及ぼす基板絶縁膜の影響2007

    • Author(s)
      小濱和之, 伊藤和博, 着本享, 他
    • Organizer
      日本金属学会
    • Place of Presentation
      岐阜大学
    • Year and Date
      2007-09-20
    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2007 Annual Research Report 2007 Final Research Report Summary
  • [Presentation] p,n-SiC両伝導型にオーミック性を示すNi-A1コンタクト材の伝導機構2007

    • Author(s)
      武田英久, 大西利武, 伊藤和博, 着本享, 村上正紀
    • Organizer
      日本金属学会
    • Place of Presentation
      岐阜大学
    • Year and Date
      2007-09-20
    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2007 Final Research Report Summary
  • [Presentation] Effect of substrates on self-formation of barrier layers in Cu(Ti)/Si samples2007

    • Author(s)
      K., Kohama, K., Ito, S., Tsukimoto
    • Organizer
      Japan Institute of Metals 2007 Anneal, Meeting
    • Place of Presentation
      Gifu Univ
    • Year and Date
      2007-09-20
    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2007 Final Research Report Summary
  • [Presentation] Simultaneous formation of n- and p-type Ni-Al ohmic contacts to 4H-SiC2007

    • Author(s)
      H., Takeda, T., Onishi, K., Ito, S., Tsukimoto, M., Murakami
    • Organizer
      Japan Institute of Metals 2007 Anneal, Meeting
    • Place of Presentation
      Gifu Univ
    • Year and Date
      2007-09-20
    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2007 Final Research Report Summary
  • [Presentation] p,n-SiC両伝導型にオーミック性を示すNi-Alコンタクト材の伝導機構2007

    • Author(s)
      武田英久, 大西利武, 伊藤和博, 着本享, 村上正紀
    • Organizer
      日本金属学会
    • Place of Presentation
      岐阜大学
    • Year and Date
      2007-09-20
    • Related Report
      2007 Annual Research Report
  • [Presentation] Resistivity reduction of Cuinterconnects2007

    • Author(s)
      K. Ito, S. Tsukimoto, M. Moriyama and M. Murakami
    • Organizer
      9th International Workshop on Stress-Induced Phenomena in Metallization
    • Place of Presentation
      ぱるるプラザ京都
    • Year and Date
      2007-04-05
    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2007 Final Research Report Summary
  • [Presentation] Resistivity reduction of Cu interconnects2007

    • Author(s)
      K., Ito, S., Tsukimoto, M., Moriyama, M., Murakami
    • Organizer
      9th International Workshop on Stress -Induced Phenomena in Metallization
    • Place of Presentation
      PaRuRu Plaza Kyoto
    • Year and Date
      2007-04-05
    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2007 Final Research Report Summary
  • [Presentation] Resistivity reduction of Cu interconnects2007

    • Author(s)
      K. Ito, S. Tsukimoto, M. Moriyama and M. Murakami
    • Organizer
      9th International Workshop on Stress-Induced Phenomena in Metallization
    • Place of Presentation
      ぱるるプラザ京都
    • Year and Date
      2007-04-05
    • Related Report
      2007 Annual Research Report
  • [Presentation] Reduction of electrical resistivity of Cu interconnects2007

    • Author(s)
      M. Murakami, M. Moriyama, S. Tsukimoto, K. Ito, and T. Onichi
    • Organizer
      Advanced Metallizations and Interconnect Technologies, in Honor of Prof. K. N. Tu's 70th Birthday(TMS 2007)
    • Place of Presentation
      オーランド(アメリカ)
    • Year and Date
      2007-02-28
    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2007 Final Research Report Summary
  • [Presentation] Reduction of electrical resistivity of Cu interconnects2007

    • Author(s)
      M., Murekami, M., Moriyama, S., Tsukimoto, K., Ito, T., Onichi
    • Organizer
      Advanced Metallivations and Interconnect Tachnologies in Honor of Prof K N. 'Tu's 70th Birthday (TMS 2007)
    • Place of Presentation
      Orland
    • Year and Date
      2007-02-28
    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2007 Final Research Report Summary
  • [Presentation] 高圧アニールによるスパッタCu(Ti)合金薄膜材の微細配線化2006

    • Author(s)
      着本享, 大西隆, 伊藤和博, 村上正紀
    • Organizer
      日本金属学会
    • Place of Presentation
      新潟大学五十嵐キャンパス
    • Year and Date
      2006-09-18
    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2007 Final Research Report Summary
  • [Presentation] Fabrication of Cu(Ti) alloy interconnects with self-formation of thin barrier metal layers using a high-pressure annealing process2006

    • Author(s)
      S., Tsukimoto, T., Onishi, K., Ito, M., Murakami
    • Organizer
      Japan Institute of Metals 2006 Anneal Meeting
    • Place of Presentation
      Niigata Univ
    • Year and Date
      2006-09-18
    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2007 Final Research Report Summary
  • [Patent(Industrial Property Rights)] 半導体配線の製造方法2006

    • Inventor(s)
      大西隆、武田実佳子、水野雅夫、着本享、可部達也、森田敏文、守山実希、伊藤和博、村上正紀
    • Industrial Property Rights Holder
      神戸製鋼所・京都大学
    • Industrial Property Number
      2006-192153
    • Filing Date
      2006-07-12
    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2007 Final Research Report Summary
  • [Patent(Industrial Property Rights)] 半導体配線の製造方法2006

    • Inventor(s)
      大四隆, 武田実 佳子, 水野雅夫, 着本享, 可部達也, 森田敏
    • Industrial Property Number
      2006-192153
    • Filing Date
      2006-07-12
    • Related Report
      2006 Annual Research Report

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Published: 2006-04-01   Modified: 2016-04-21  

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