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Neutron reflectivity study on buried hetero-interface of D monolayer and growth of novel hetero-structure

Research Project

Project/Area Number 18510104
Research Category

Grant-in-Aid for Scientific Research (C)

Allocation TypeSingle-year Grants
Section一般
Research Field Nanomaterials/Nanobioscience
Research InstitutionJapan Atomic Energy Agency

Principal Investigator

ASAOKA Hidehito  Japan Atomic Energy Agency, Quantum Beam Science Directorate, Principal Researcher (40370340)

Co-Investigator(Kenkyū-buntansha) TAKEDA Masayasu  Japan Atomic Energy Agency, Quantum Beam Science Directorate, Principal Researcher (70222099)
SOYAMA Kazuhiko  Japan Atomic Energy Agency, Quantum Beam Science Directorate, Principal Researcher (90343912)
SHAMOTO Shin-ichi  Japan Atomic Energy Agency, Quantum Beam Science Directorate, Principal Researcher (90235698)
Project Period (FY) 2006 – 2007
Project Status Completed (Fiscal Year 2007)
Budget Amount *help
¥3,740,000 (Direct Cost: ¥3,500,000、Indirect Cost: ¥240,000)
Fiscal Year 2007: ¥1,040,000 (Direct Cost: ¥800,000、Indirect Cost: ¥240,000)
Fiscal Year 2006: ¥2,700,000 (Direct Cost: ¥2,700,000)
KeywordsCrystal Growth / Surface and Interface / Nano materials / Hydrogen / Neutron
Research Abstract

Strontium and SrO are well-known templates on Si for SrTiO3, a highly-desirable transistor gate material. When stacked on Si, Sr layer becomes amorphous due to its large lattice mismatch of 12%. By introducing a monatomic hydrogen layer on Si, we succeeded in making the Sr (and subsequent SrO) layer (s) grow epitaxially with atomically abrupt interface. However, it is somewhat mysterious how the monatomic hydrogen layer behaves to manage this large mismatch. In order to identify its behavior, we have employed compound analysis by neutron reflectometer as well as multiple-internal-reflection fourier-transform infrared spectroscopy (MIR-FTIR) to investigate the buried hetero-interface of Sr grown on Si (111) 1x1: monohydride. We have found difference between the H- and D-terminated substrates in the reflectivity profiles, and changes in Si-H bonding features with the Sr growth (mainly at the initial monolayer stage) in the FTIR spectra. From these, existence of buried H layer at the hetero-interface is confirmed with its bonding environment.

Report

(3 results)
  • 2007 Annual Research Report   Final Research Report Summary
  • 2006 Annual Research Report
  • Research Products

    (47 results)

All 2008 2007 2006

All Journal Article (25 results) (of which Peer Reviewed: 14 results) Presentation (22 results)

  • [Journal Article] Real-time stress analysis of Ge nanodot growth on H-terminated Si(111)-1x1 and Si(111)-7x7 surfaces2008

    • Author(s)
      H.Asaoka, et. al.
    • Journal Title

      Curr.Appl.Phys. 8

      Pages: 246-248

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2007 Final Research Report Summary
    • Peer Reviewed
  • [Journal Article] Single-domain Si(110)-16x2 surface fabricated by electromigration2008

    • Author(s)
      Y.Yamada, et. al.
    • Journal Title

      Phys.Rev.B 76

      Pages: 153309-153309

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2007 Final Research Report Summary
    • Peer Reviewed
  • [Journal Article] Single-Domained Si(110)-"16x2" Surface2008

    • Author(s)
      Y.Yamada, et. al.
    • Journal Title

      J.Phys. 100

      Pages: 72018-72018

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2007 Final Research Report Summary
    • Peer Reviewed
  • [Journal Article] Controlling the surface chirality of Si(110)2008

    • Author(s)
      Y.Yamada, et. al.
    • Journal Title

      Phys.Rev.B 77

      Pages: 153305-153305

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2007 Final Research Report Summary
    • Peer Reviewed
  • [Journal Article] In-situ Observation of H-Si(111) interface during initial Sr growth process by MIR-FTIR2008

    • Author(s)
      H. Asaoka, et. al.
    • Journal Title

      Curr. Appl. Phys. 8

      Pages: 246-248

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2007 Final Research Report Summary
  • [Journal Article] Real-time stress analysis of Ge nanodot growth on H-terminated Si(111)-1×1 and Si(111)-7×7 surfaces2008

    • Author(s)
      H. Asaoka, et. al.
    • Journal Title

      Curr.Appl.Phys. 8

      Pages: 246-248

    • Related Report
      2007 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Ge/Si(111)-7x7 ヘテロエピタキシャル成長におけるストレスその場測定2007

    • Author(s)
      朝岡秀人, 他
    • Journal Title

      表面科学 28

      Pages: 500-503

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2007 Final Research Report Summary
    • Peer Reviewed
  • [Journal Article] Observation of initial oxidation process on Si(110)-16x2 by scanning tunneling microscopy2007

    • Author(s)
      H.Togashi, et. al.
    • Journal Title

      Jpn.J.Appl.Phys. 46

      Pages: 3239-3243

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2007 Final Research Report Summary
    • Peer Reviewed
  • [Journal Article] Real-time stress measurement of Ge/Si(111)-7x7 heteroepitaxial growth2007

    • Author(s)
      H. Asaoka, et. al.
    • Journal Title

      J. Surf. Sci. Jpn. 28

      Pages: 500-503

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2007 Final Research Report Summary
  • [Journal Article] Observation of initial oxidation process on Si(110)-16x2 by scanning tunneling microscopy2007

    • Author(s)
      H. Togashi, et. al.
    • Journal Title

      Jpn. J. Appl. Phys. 46

      Pages: 3239-3243

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2007 Final Research Report Summary
  • [Journal Article] Single-domain Si(110) -16x2 surface fabricated by electromigration2007

    • Author(s)
      Y. Yamada, et. al.
    • Journal Title

      Phys. Rev. B 76

      Pages: 153309-153309

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2007 Final Research Report Summary
  • [Journal Article] Ge/Si(111)-7×7ヘテロエピタキシャル成長におけるストレスその場測定2007

    • Author(s)
      朝岡 秀人, et. al.
    • Journal Title

      表面科学 28

      Pages: 500-503

    • NAID

      10019752495

    • Related Report
      2007 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Observation of initial oxidation process on Si(110)-16×2 by scanning tunneling microscopy2007

    • Author(s)
      H. Togashi, et. al.
    • Journal Title

      Jpn.J.Appl.Phys. 46

      Pages: 3239-3243

    • Related Report
      2007 Annual Research Report
    • Peer Reviewed
  • [Journal Article] In situ characterization of the heterointerfaces between SrO films and dangling-bond-terminated Si surfaces2006

    • Author(s)
      H.Asaoka, et. al.
    • Journal Title

      Thin Solid Films 508

      Pages: 175-177

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2007 Final Research Report Summary
    • Peer Reviewed
  • [Journal Article] Initial growth stage of a highly mismatched strontium film on a hydrogen-terminated silicon(111)surface2006

    • Author(s)
      H.Asaoka, et. al.
    • Journal Title

      Appl.Phys.Lett. 88

      Pages: 201911-201911

    • NAID

      120006684009

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2007 Final Research Report Summary
    • Peer Reviewed
  • [Journal Article] Crystal growth of SrTiO_3 films on H-terminated Si(111)with SrO buffer layers2006

    • Author(s)
      Y.Machida, et. al.
    • Journal Title

      Surf.Sci. 564

      Pages: 724-728

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2007 Final Research Report Summary
    • Peer Reviewed
  • [Journal Article] Recent Research Activities on a Polarized Neutron Reflectometer(PORE)2006

    • Author(s)
      N.Toriaki, et. al.
    • Journal Title

      KEK Progress Report 4

      Pages: 230-232

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2007 Final Research Report Summary
    • Peer Reviewed
  • [Journal Article] 4次元空間中性子探査装置の開発と酸化物高温超伝導機構の解明2006

    • Author(s)
      新井正敏, et. al.
    • Journal Title

      JAEA-Review 33

      Pages: 1-58

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2007 Final Research Report Summary
    • Peer Reviewed
  • [Journal Article] Direct determination of surface stress during Ge growth on Si(111)2006

    • Author(s)
      H. Asaoka, et. al.
    • Journal Title

      Thin Solid Films 508

      Pages: 175-177

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2007 Final Research Report Summary
  • [Journal Article] In-situ observation of H-terminated Si(111) interface during initial Sr film growth process2006

    • Author(s)
      H. Asaoka, et. al.
    • Journal Title

      Appl. Phys. Lett. 88

      Pages: 201911-201911

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2007 Final Research Report Summary
  • [Journal Article] Crystal growth of SrTiO3 films on H-terminated Si(111) with SrO buffer layers2006

    • Author(s)
      Y. Machida, et. al.
    • Journal Title

      Surf. Sci. 564

      Pages: 724-728

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2007 Final Research Report Summary
  • [Journal Article] Initial growth stage of a highly mismatched strontium film on a hydrogen-terminated silicon (111) surface2006

    • Author(s)
      H.Asaoka et al.
    • Journal Title

      Appl.Phys.Lett. 88

      Pages: 201911-201911

    • NAID

      120006684009

    • Related Report
      2006 Annual Research Report
  • [Journal Article] In situ characterization of the heterointerfaces between SrO films and dangling-bond-terminated Si surfaces2006

    • Author(s)
      H.Asaoka et al.
    • Journal Title

      Thin Solid Films 508

      Pages: 175-177

    • Related Report
      2006 Annual Research Report
  • [Journal Article] Crystal growth of SrTiO_3 films on H-terminated Si(111) with SrO buffer layers2006

    • Author(s)
      Y.Machida et al.
    • Journal Title

      Surf.Sci 564

      Pages: 724-728

    • Related Report
      2006 Annual Research Report
  • [Journal Article] 4次元空間中性子探査装置の開発と酸化物高温超伝導機構の解明2006

    • Author(s)
      新井正敏 et al.
    • Journal Title

      JAEA-Review 33

      Pages: 1-58

    • Related Report
      2006 Annual Research Report
  • [Presentation] 大きな格子不整合系の薄膜成長と埋もれた水素界面構造の解析2008

    • Author(s)
      朝岡秀人, 他
    • Organizer
      第77回中性子セミナー
    • Place of Presentation
      茨城
    • Year and Date
      2008-02-28
    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2007 Final Research Report Summary
  • [Presentation] 多重内部反射赤外分光法を用いたSr 初期成長過程におけるH-Si(111)界面のその場観察2008

    • Author(s)
      山崎竜也, 他
    • Organizer
      第55回応用物理学関係連合講演会
    • Place of Presentation
      東京
    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2007 Final Research Report Summary
  • [Presentation] Direct determination of surface stress during Ge growth on Si(111)2008

    • Author(s)
      H. Asaoka
    • Organizer
      34th KVS meeting
    • Place of Presentation
      Seoul
    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2007 Final Research Report Summary
  • [Presentation] In-situ Observation of H-Si(111) interface during initial Sr growth process by MIR-FTIR2008

    • Author(s)
      T. Yamazaki, et. al.
    • Organizer
      JSAP 55 th Spring meeting
    • Place of Presentation
      Tokyo
    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2007 Final Research Report Summary
  • [Presentation] Real-time stress analysis of Ge nanodot growth on H-terminated Si(111)-1x1 and Si(111)-7x7 surfaces2007

    • Author(s)
      H.Asaoka, et. al.
    • Organizer
      The 3rd Advanced Materials and Nanotechnology Conference
    • Place of Presentation
      New Zealand
    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2007 Final Research Report Summary
  • [Presentation] H-Si(111)1x1、Si(111)7x7表面上のGeドット初期成長過程におけるストレスその場観察2007

    • Author(s)
      朝岡秀人, 他
    • Organizer
      第54回応用物理学関係連合講演会
    • Place of Presentation
      東京
    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2007 Final Research Report Summary
  • [Presentation] Direct measurement of reconstructed surface stress in Si(111)-7x7 and Ge(111)-5x52007

    • Author(s)
      H.Asaoka, et. al.
    • Organizer
      17th International Vacuum Congress,13th International Conference on Surface Science,International Conference on Nanoscience and Technology
    • Place of Presentation
      Sweden
    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2007 Final Research Report Summary
  • [Presentation] Structural formation on semiconductor surfaces2007

    • Author(s)
      H.Asaoka, et. al.
    • Organizer
      3rd Japan-Korea Symposium on Surface Nanostructures
    • Place of Presentation
      Miyagi
    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2007 Final Research Report Summary
  • [Presentation] Ge/Siヘテロ成長過程における表面ストレスの直接観測2007

    • Author(s)
      朝岡秀人, 他
    • Organizer
      第27回表面科学講演大会
    • Place of Presentation
      東京
    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2007 Final Research Report Summary
  • [Presentation] Sr 薄膜初期成長過程における水素終端Si(111)界面のその場観察-FTIR測定-2007

    • Author(s)
      山崎竜也, 他
    • Organizer
      第68回応用物理学会学術講演会
    • Place of Presentation
      北海道
    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2007 Final Research Report Summary
  • [Presentation] Buried H,D Monolayer at Hetero-Interface in a Highly Mismatched Epitaxy on Si2007

    • Author(s)
      T.Yamazaki, et. al.
    • Organizer
      18th Symposium of MRS-Japan
    • Place of Presentation
      Tokyo
    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2007 Final Research Report Summary
  • [Presentation] Real-time stress analysis of Ge nanodot growth on H-terminated Si(111) -1x1 and Si(111) -7x7 surfaces2007

    • Author(s)
      H. Asaoka, et. al.
    • Organizer
      3rd Advanced Materials and Nanotechnology Conference
    • Place of Presentation
      New Zealand
    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2007 Final Research Report Summary
  • [Presentation] Direct measurement of reconstructed surface stress in Si(111) -7x7 and Ge(111) -5x52007

    • Author(s)
      H. Asaoka, et. al.
    • Organizer
      IVC-17, ICSS-13, ICN+T2007
    • Place of Presentation
      Sweden
    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2007 Final Research Report Summary
  • [Presentation] In-situ observation of H-terminated Si(111) interface during initial Sr film growth process2007

    • Author(s)
      T. Yamazaki, et. al.
    • Organizer
      JSAP 68 th Autumn meeting
    • Place of Presentation
      Hokkaido
    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2007 Final Research Report Summary
  • [Presentation] Buried H, D Monolayer at Hetero-Interface in a Highly Mismatched Epitaxy on Si2007

    • Author(s)
      T. Yamazaki, et. al.
    • Organizer
      18th Symposium of MRSJ
    • Place of Presentation
      Tokyo
    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2007 Final Research Report Summary
  • [Presentation] Direct measurement of reconstructed surface stress in Si(111)-7×7 andGe(111)-5x52007

    • Author(s)
      H. Asaoka, et. al.
    • Organizer
      13th International Conference on Surface Science
    • Place of Presentation
      Stockholm
    • Related Report
      2007 Annual Research Report
  • [Presentation] 中性子反射率法による研究:埋もれた水素、重水素ヘテロ界面構造2006

    • Author(s)
      朝岡秀人, 他
    • Organizer
      第53回応用物理学関係連合講演会
    • Place of Presentation
      滋賀
    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2007 Final Research Report Summary
  • [Presentation] Ge/Siヘテロエピタキシャル成長におけるストレスその場測定2006

    • Author(s)
      朝岡秀人, 他
    • Organizer
      第26回表面科学講演大会
    • Place of Presentation
      大阪
    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2007 Final Research Report Summary
  • [Presentation] 中性子反射率による埋もれた水素・重水素ヘテロ界面構造の解析2006

    • Author(s)
      朝岡秀人, 他
    • Organizer
      日本中性子科学会第6回年会
    • Place of Presentation
      茨城
    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2007 Final Research Report Summary
  • [Presentation] Si and Ge small clusters on Si(111)and Ge(111)surfaces2006

    • Author(s)
      H.Asaoka
    • Organizer
      1st Japan-Korea Symposium on Surface Nanostructures
    • Place of Presentation
      Miyagi
    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2007 Final Research Report Summary
  • [Presentation] Buried hetero-interface of H, D monolayer2006

    • Author(s)
      H. Asaoka, et. al.
    • Organizer
      JSAP 67 th Autumn meeting
    • Place of Presentation
      Shiga
    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2007 Final Research Report Summary
  • [Presentation] Neutron reflectivity study on buried hetero-interfacial structure of H, D monolayer2006

    • Author(s)
      H. Asaoka, et. al.
    • Organizer
      JSNS 6th annual meeting
    • Place of Presentation
      Ibaraki
    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2007 Final Research Report Summary

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Published: 2006-04-01   Modified: 2016-04-21  

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