| Project/Area Number |
18510108
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| Research Category |
Grant-in-Aid for Scientific Research (C)
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| Allocation Type | Single-year Grants |
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| Section | 一般 |
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| Research Field |
Microdevices/Nanodevices
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| Research Institution | Tokyo Institute of Technology |
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Principal Investigator |
MATSUTANI Akihiro Tokyo Institute of Technology, Technical Department, Technical Specialist (40397047)
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| Project Period (FY) |
2006 – 2007
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| Project Status |
Completed (Fiscal Year 2007)
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| Budget Amount *help |
¥3,150,000 (Direct Cost: ¥3,000,000、Indirect Cost: ¥150,000)
Fiscal Year 2007: ¥650,000 (Direct Cost: ¥500,000、Indirect Cost: ¥150,000)
Fiscal Year 2006: ¥2,500,000 (Direct Cost: ¥2,500,000)
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| Keywords | plasma processing / semiconductor microfabrication / micromachine / dry etching / fluorite / high density plasma / ultraviolet / optical devices / プラズマ / 水蒸気 / 固体ソース |
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| Research Abstract |
The discharge of the H_2O plasma by introducing water vapor to the process chamber was demonstrated. The H_2O plasma was characterized by the optical emission spectrum analysis and the mass spectrum analysis. We observed some species such as OH, H, O, H_2O and H_3O with both analysis methods. We think that it is also important to take account of the space plasma or the discharge in air for understanding of H_2O plasma.
In addition, the discharge of H_2O plasma generated by solid-source H_2O placed in a process chamber was demonstrated. Also, the dry etching process of CaF_2 using solid-source H_2O (ice) plasma was investigated. The average roughness of the etched surface was about 1 nm for an etching depth of in 2 pin which satisfies the requirements for optical device fabrication. We believe that the proposed CaF_2 etching process is suitable for the fabrication of optical devices such as gratings or Fresnel lenses. In addition, we think that the H_2O plasma including OH radicals obtained by this proposed method may be useful for sterilization and as a new UV light source.
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