Guest-Host Interaction and High-pressure Phase Transitions in Semiconductor Clathrates Studied by Raman Spectromopy
| Project/Area Number |
18540315
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| Research Category |
Grant-in-Aid for Scientific Research (C)
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| Allocation Type | Single-year Grants |
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| Section | 一般 |
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| Research Field |
Condensed matter physics I
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| Research Institution | Gifu University |
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Principal Investigator |
SHIMIZU Hiroyasu Gifu University, Faculty of Engineering, Prof (80023258)
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| Co-Investigator(Kenkyū-buntansha) |
SASAKI Shigeo Gifu University, Faculty of Engineering, Assoc. Prof (30196159)
KUME Tetsuji Gifu University, Faculty of Engineering, Assis.Prof (30293541)
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| Project Period (FY) |
2006 – 2007
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| Project Status |
Completed (Fiscal Year 2007)
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| Budget Amount *help |
¥3,800,000 (Direct Cost: ¥3,500,000、Indirect Cost: ¥300,000)
Fiscal Year 2007: ¥1,300,000 (Direct Cost: ¥1,000,000、Indirect Cost: ¥300,000)
Fiscal Year 2006: ¥2,500,000 (Direct Cost: ¥2,500,000)
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| Keywords | Raman Scattering / Semiconductor Clathrate / Nano-Structure / Rattling Vibration / High Pressure / Guest-Host Interaction |
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| Research Abstract |
1.High-pressure Raman and XRD measurements of a defect clathrate Ba_8Ge_(43) □_3 have been carried out at room temperature up to 40 GPa. Raman spectra show a pressure-induced phase transition at 8 GPa, which is due to the structural distortion through the three-bonded Ge atoms and to the change in the guest-host electronic interaction.
Both Raman spectra and XRD patterns present the evidence for the amorphization of Ba_8Ge_(43) around 30-40 GPa. The isostructural phase transition associated with the large volume reduction was not observed for Ba_8Ge_(43) up to 40 GPa. The pressure dependence of the lattice constant (a) normalized by a_0 at 1 bar ( ; a/s_0) shows the continuous decrease with pressure until amorphization. From the good coincidence of these curves between Ba_8Ge_(43) and Ba_sSi_(46) at pressures above 15 GPa, we propose that the isostructural phase transition found for Ba_8Si_(46) at 15 GPa may be originated from a defect-induced transformation to Ba_sSi_(43) □_3 with the
… More
help of their theoretical EOS by the first-principles calculations.
2.High-pressure Raman measurements of type-III germanium clathrate Ba_(24)Ge_(100) has been made up to 26 GPa at room temperature. We observed low-frequency vibrational (rattling) modes associated with guest Ba atoms at 25-50 cm^(-1), and host Ge framework vibrations around 50-250 cm^(-1), which are compared with those of silicon clathrate Ba_(24)Si_(100). High-pressure phase transition was found at 3.2 GPa, which seems to be due to the structural distortion combined with the enhanced guest-host interactions.
Ba_(24) Ge_(100) becomes irreversibly amorphous at pressures above 22 GPa. This pressure is less than that of type-I Ba_8Ge_(43) clathrate, indicating that type-III structure is less stable than type-I Ge clathrate under high pressures.
The present results throw valuable light on the understanding and the application of semiconductor clathrates, the high pressure phase tuansitions, and the general system of guest-host interactions. Less
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Report
(3 results)
Research Products
(15 results)
