Selective and rapid heating method for polycrystallization of amorphous Si using microwave plasma irradiation
| Project/Area Number |
18560007
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| Research Category |
Grant-in-Aid for Scientific Research (C)
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| Allocation Type | Single-year Grants |
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| Section | 一般 |
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| Research Field |
Applied materials science/Crystal engineering
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| Research Institution | University of Yamanashi |
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Principal Investigator |
NAKAGAWA Kiyokazu University of Yamanashi, Department of Research Interdisciplinary Graduate School of Medicine and Engineering, Professor (40324181)
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| Co-Investigator(Kenkyū-buntansha) |
SATO Tetsuya University of Yamanashi, Clean Energy Research Center, Associate Professor (60252011)
YAMANAKA Junji University of Yamanashi, Interdisciplinary Graduate School of Medicine and Engineering, Associate Professor (20293441)
SAWAN Kentaro Musashi Institute of Technology, Advanced Research Laboratories, Research Assistants (90409376)
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| Project Period (FY) |
2006 – 2007
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| Project Status |
Completed (Fiscal Year 2007)
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| Budget Amount *help |
¥3,670,000 (Direct Cost: ¥3,400,000、Indirect Cost: ¥270,000)
Fiscal Year 2007: ¥1,170,000 (Direct Cost: ¥900,000、Indirect Cost: ¥270,000)
Fiscal Year 2006: ¥2,500,000 (Direct Cost: ¥2,500,000)
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| Keywords | microwave plasma / Polycrystalline Si / thin film transistor / 電界効界トランジスタ / 多結晶シリコン・ゲルマニウム |
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| Research Abstract |
We have developed a new technique which enables the selective and rapid heating of semiconductor films with the high conductivity and/or high dielectric constant by using microwave plasma irradiation. In order to apply the technique to crystallization of amorphous Si, a metal such as Ni, Pt and PtPd is deposited selectively on amorphous layers, since amorphous Si has neither high conductivity nor high dielectric constant. It will be shown in this present that the temperature ramping rate and attainable highest temperature by plasma irradiation depend on gas species of the atmosphere, gas pressure and metal species.
A 100 nm amorphous silicon film was deposited on a quartz substrate by molecular beam deposition method, and a Ni layer was selectively formed on the amorphous film. Then, the sample was put in a vacuum chamber and irradiated in some gas atmosphere by microwave plasma with the frequency of 2.45GH_z and the output electric power of 1kW.
The color of the entire Si region of the
… More
sample was changed from red to yellow by plasma irradiation, which means that the amorphous film changes to crystalline one. The cross-sectional STEM observation shows that the sample is poly-crystallized by plasma irradiation. During irradiation, some region of Ni film evaporated, which implies that the temperature of Ni increased up to at least 1000℃.
The temperature of the Si region, which is 1 mm apart from the edge of the nickel layer, increases immediately after the plasma irradiation in the hydrogen ambient. The temperature depends on the pressure, and the highest temperature of 900℃ is achieved at about 150P_a.
The highest temperatures of the Si regions are obtained as functions of the pressures of helium, nitrogen and argon in addition to hydrogen. The highest temperatures are at most 400℃ in all pressure regions independently of gas species except hydrogen, which suggests that the unstable and excited hydrogen-related species such as radicals and atoms also participate in the heating process. Less
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Report
(3 results)
Research Products
(9 results)
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[Presentation] Atmosphere Dependence of Silicon Crystallization by Microwave Annealing2007
Author(s)
S. Ashizawa, M. Mitsui, K. Arimoto, J. Yamanaka, K. Nakagawa, T. Arai, T. Takamatsu, K. Sawano, Y. Shiraki
Organizer
68th Spring Meeting, Japan Society of Applied Physics
Place of Presentation
Hokkaido Insti tute of Technology, Japan
Year and Date
2007-09-04
Description
「研究成果報告書概要(欧文)」より
Related Report
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[Presentation] Crystallization of Amorphous Silicon by Micro-wave Annealing2007
Author(s)
S. Ashizawa, M. Mitsui, T. Horie, K. Arimoto, J. Yamanaka, K. Nakagawa, T. Arai, T. Takamatsu, K. Sawano, Y. Shiraki
Organizer
54th Spring Meeting, Japan Society of Applied Physics
Place of Presentation
Aoyama Gakuin University. Japan
Year and Date
2007-03-30
Description
「研究成果報告書概要(欧文)」より
Related Report
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[Presentation] Heating Mechanism of Microwave Plasma Annealing for Crystallization of Amorphous Silicon2007
Author(s)
S. Ashizawa, S. Ariizumi, M. Mitsui, K. Arimoto, J. Yamanaka, K. Nakagawa, T. Arai, T. Takamatsu, K. Sawano, Y. Shiraki
Organizer
55th Spring Meeting, Japan Society of Applied Physics
Place of Presentation
Nihon University, Japan
Year and Date
2007-03-29
Description
「研究成果報告書概要(欧文)」より
Related Report
