| Project/Area Number |
18560008
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| Research Category |
Grant-in-Aid for Scientific Research (C)
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| Allocation Type | Single-year Grants |
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| Section | 一般 |
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| Research Field |
Applied materials science/Crystal engineering
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| Research Institution | Shizuoka University |
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Principal Investigator |
TAKANO Yasushi Shizuoka University, Engineering, Associate professor (00197120)
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| Co-Investigator(Kenkyū-buntansha) |
FUKE Shuro Shizuoka University, Engineering, Associate professor (00022236)
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| Project Period (FY) |
2006 – 2007
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| Project Status |
Completed (Fiscal Year 2007)
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| Budget Amount *help |
¥3,500,000 (Direct Cost: ¥3,200,000、Indirect Cost: ¥300,000)
Fiscal Year 2007: ¥1,300,000 (Direct Cost: ¥1,000,000、Indirect Cost: ¥300,000)
Fiscal Year 2006: ¥2,200,000 (Direct Cost: ¥2,200,000)
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| Keywords | metalorganic vapor phase epitaxy / Si substrate / compound semiconductor / crystal growth / optoelectronic integrated circuit / nano dot / gallium phosphide / cross-hatched pattern / 有機金属気相成長法 |
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| Research Abstract |
We obtained a high-quality GaP layer on a fraction of a Si substrate using metalorganic vapor phase epitaxy. We studied on growth conditions for a high-quality GaP layer on the whole surface of a Si substrate. Triethygallium and PHs were used as source materials. Surface morphology was observed using Nomarski microscope and atomic force microscopy. Surface morphology improved with increase in temperature between 700 and 830℃. Under the optimized growth conditions, a cross-hatched pattern that indicated a high-quality layer, was obtained on the whole surface of a GaP layer. High-temperature growth resulted in improved layers. We investigated GaP structure at the initial growth stage. Island density increased and island size decreased with increasing temperature. Under the optimized growth conditions, the island density was high. Therefore, island coalescence occurred quickly, leading to a layer below a critical layer thickness.
We investigated InP dots on GaP substrates using metalorganic vapor phase epitaxy. The substrate temperature was varied between 440 and 540℃. The dot density increased with decreasing temperature of InP growth. The maximum dot density was 3 × 10^(10) cm^(-2). At 540℃, the dot density increased with decrease in PH3 flow rate. This tendency is difficult to be explained by addressing surface migration of In atoms. Surface energy of dots might decrease by decreasing PH3 flow rate.
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