Fabrication of a thermoelectric device using InSb superlattices with impurity doping
Project/Area Number |
18560016
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Research Category |
Grant-in-Aid for Scientific Research (C)
|
Allocation Type | Single-year Grants |
Section | 一般 |
Research Field |
Applied materials science/Crystal engineering
|
Research Institution | Kanagawa University |
Principal Investigator |
YAMAGUCHI Shigeo Kanagawa University, Dept. of Electronics, Informatics, and Frontiers, Professor (20343634)
|
Project Period (FY) |
2006 – 2007
|
Project Status |
Completed (Fiscal Year 2007)
|
Budget Amount *help |
¥3,770,000 (Direct Cost: ¥3,500,000、Indirect Cost: ¥270,000)
Fiscal Year 2007: ¥1,170,000 (Direct Cost: ¥900,000、Indirect Cost: ¥270,000)
Fiscal Year 2006: ¥2,600,000 (Direct Cost: ¥2,600,000)
|
Keywords | InSb / thermoelectric / InAsSb / 超格子 / 熱伝導率 / 熱起電力 / インジウムヒ素 |
Research Abstract |
We proposed a multifunctional sensor based on InSb thin film which has four functions such as hall sensor, infrared detector, temperature sensor, and thermoelectric power generator. The characteristic of each function is as follows. Hall sensor was evaluated by electron mobility and the maximum value was 24000cm^2/Vs at room temperature (RT). The voltage sensitivity of Infrared detector was 156mV/W when peak wavelength of infrared rays from black body was λ=6.9μm. The thermoelectric properties were evaluated using P_f, and the maximum value was 6.4×10_<-3>W/mK^<2> at 600K. And the temperature sensor can be calculated from the temperature dependence of resistance.
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Report
(3 results)
Research Products
(19 results)