Development of strain distribution measurement method in Nano scale using Photoluminescence of Quantum Dots
| Project/Area Number |
18560069
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| Research Category |
Grant-in-Aid for Scientific Research (C)
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| Allocation Type | Single-year Grants |
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| Section | 一般 |
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| Research Field |
Materials/Mechanics of materials
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| Research Institution | Saitama University |
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Principal Investigator |
ARAI Yoshio Saitama University, Graduate School of Science and Engineering, Professor (70175959)
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| Project Period (FY) |
2006 – 2007
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| Project Status |
Completed (Fiscal Year 2007)
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| Budget Amount *help |
¥3,920,000 (Direct Cost: ¥3,500,000、Indirect Cost: ¥420,000)
Fiscal Year 2007: ¥1,820,000 (Direct Cost: ¥1,400,000、Indirect Cost: ¥420,000)
Fiscal Year 2006: ¥2,100,000 (Direct Cost: ¥2,100,000)
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| Keywords | Nanomechanics / Quantum dots / Strain analysis / Nanoindentation / Semiconductor device / Energy band gap |
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| Research Abstract |
The location of quantum dots (QDs) embedded in a GaAs matrix is successfully identified by microscopic photoluminescence (PL) measurement during nanoprobe indentation with a horizontal scan at low temperature (10 K). By introducing a high-sensitive load cell and a focused ion beam (FIB)-fabricated flat-apex nanoprobe, the indentation force and PL of QDs are measured simultaneously at each point in the direction of the nanoprobe horizontal scanning with a constant indentation force. The experimental results show that the emission energy from QDs has a strong dependence on the location of QDs relative to the nanoprobe indented location. Consequently, the emission energy shifts with the nanoprobe scan, generating an emission trace with a constant indentation force. Based on the energy shift of the ground state of the QD simulated by the combination of three-dimensional finite element (FE) strain calculation and strain-dependent k〓p Hamiltonian, an estimation method is developed, which enables us to identify the location of the QD from its emission trace in the nanoprobe indentation experiment. Results indicate that all the emission traces clearly observed are emitted from the QDs around the edge of the nanoprobe-indented area. Further discussion reveals that the evolution of shear strain generates hole accumulation around the contact edge of the indented nanoprobe. Consequently, the high density of holes enhances the PL of the QDs in that region.
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Report
(3 results)
Research Products
(62 results)
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[Presentation] 高圧複合容器の耐久性向上と最適疲労設計2006
Author(s)
荒居善雄, 土田栄一郎, 大塚朋之, 鈴木 弘, 柴田 哲, 大淵 智之, 太田 直美
Organizer
日本機械学会2006年度年次大会講演会
Place of Presentation
熊本大学
Year and Date
2006-09-20
Description
「研究成果報告書概要(和文)」より
Related Report
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