Fabrication of Mg2Si thermal-to-electric energy conversion device using die-casting sysnthesis method
| Project/Area Number |
18560285
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| Research Category |
Grant-in-Aid for Scientific Research (C)
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| Allocation Type | Single-year Grants |
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| Section | 一般 |
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| Research Field |
電力工学・電気機器工学
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| Research Institution | Tokyo University of Science |
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Principal Investigator |
IIDA Tsutomu Tokyo University of Science, Department of material science and technology, Assoc. Prof. (20297625)
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| Project Period (FY) |
2006 – 2007
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| Project Status |
Completed (Fiscal Year 2007)
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| Budget Amount *help |
¥3,880,000 (Direct Cost: ¥3,400,000、Indirect Cost: ¥480,000)
Fiscal Year 2007: ¥2,080,000 (Direct Cost: ¥1,600,000、Indirect Cost: ¥480,000)
Fiscal Year 2006: ¥1,800,000 (Direct Cost: ¥1,800,000)
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| Keywords | SiGe / Solar cell / Environmentally-benign / Thermoelectric / 結晶育成 / 太陽電池 |
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| Research Abstract |
With the spread of solar-cell power generation, the demand for solar cells with higher conversion efficiency is increasing. It is necessary that the materials which can be used for energy-conversion applications should be environmentally-benign semiconductors, namely, they possess the advantages of abundance of their constituent elements and non-toxicity of their processing by-products. Sil-xGex alloys is known as a candidate material for producing carrier multiplication (Auger generation), which allows a conversion efficiency of 30% when the Ge amount is about 68%. Sil-xGex alloys are important materials not only for microelectronic devices but also for solid-state power generators such as solar cells and thermoelectric devices, because of their chemical stability, mechanical strength at elevated temperatures, and a close match of the n-/p-type alloys in terms of their thermal and electrical characteristics enable better device operation. However, since the Si-Ge system shows a comple
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te series of solid solutions with a phase relationship, it is not easy to precipitate crystals possessing a certain composition of silicon or germanium selectively by using conventional Bridgman, Czochralski and floating-zone methods.
So far, we have performed bulk crystals growth of Sil-xGex using an advanced version of the Bridgman technique combined with a die-casting growth method, but precise and reproducible control of their compositional uniformity and thickness were not accomplished. In order to realize Sil-xGex wafer with an arbitrary composition, we have developed a new method of preparing Sil-xGex by a wafer-proximity method. This method enables to form bulk polycrystalline Sil-xGex with x=0.3~0.7, with slight deviation of ?}0.5% for the compositional uniformity. The grown Sil-xGex crystals obtained were 15x15 mm2 and 3 mm thick. The wafer-proximity method allows the control of the wafer thickness and composition x by simply changing the growth temperature and the duration. The microstructure of the samples was analyzed by using an optical microscope, and their composition was determined by electron-probe microanalysis. For the grown specimens room temperature photoconductivity measurement was carried out. The room temperature I-V characteristics of the samples, which possess pn junction by phosphorus doping using phosphor silicate glass (PSG) were measured using a solar-simulator. The obtained results imply that the newly developed wafer-proximity growth technique can fabricate bulk Sil-xGex (x~0.6-0.7) crystal for Auger generation in a reproducible manner. Less
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Report
(3 results)
Research Products
(12 results)
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[Journal Article] Design and evaluation of n-type Si1-xGex for thermoelectric-conversion material
Author(s)
1. T. Imai, T. lida, Y. Miyata, T. Itoh, H. Funashima, Y. Takanashi, N. Hamada
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Journal Title
Thermoelectric Power Generation (Mater. Res. Soc. Proc. Vol. 1044), ed. by T. P. Hogan, J. Yang, R. Funahashi, T. Tritt, (Mater. Res. Soc.. 2008)
Description
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[Journal Article] Thermoelectric properties of polycrystalline Si1-xGex grown by die-casting vertical Bridgman growth technique
Author(s)
T. Baba, T. Iida, H. Hirahara, T. Itoh, M. Akasaka, Y. Takanashi
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Journal Title
Materials and Technologies for Direct Thermal-to-Electric Energy Conversion (Mater. Res. Soc. Proc. Vol. 886), ed. by J. Yang, T. P. Hogan, R. Funahashi, G. S. Nolas, (Mater. Res. Soc, 2006)
Description
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